CN203192859U - Heat-dissipating lead frame structure - Google Patents
Heat-dissipating lead frame structure Download PDFInfo
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- CN203192859U CN203192859U CN 201320177056 CN201320177056U CN203192859U CN 203192859 U CN203192859 U CN 203192859U CN 201320177056 CN201320177056 CN 201320177056 CN 201320177056 U CN201320177056 U CN 201320177056U CN 203192859 U CN203192859 U CN 203192859U
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- radiator
- frame structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The utility model discloses a heat-dissipating lead frame structure. The heat-dissipating lead frame structure comprises a lead frame and a heat dissipater, wherein the lead frame comprises an inner leg and an outer leg which are connected; an accommodating space is formed between the inner leg and the outer leg; the heat dissipater is arranged in the accommodating space, and comprises an insulation heat-conducting layer connected with the inner leg of the lead frame, and heat-dissipating fins connected with the insulation heat-conducting layer; and a heat-conducting support block and a heat-conducting projection surface or a heat-conducting welding pad further can be arranged on the heat-dissipating fins; therefore, the heat-dissipating lead frame structure disclosed by the utility model is mainly capable of conducting the heat generated during the working of a light-emitting diode or an IC (integrated circuit) wafer to the heat-dissipating fins via the lead frame, and conducting the heat to the heat-dissipating fins via one of the additional heat-conducting support block, heat-conducting projection surface and heat-conducting welding pad, so that the light-emitting diode (or the IC wafer) has multiple heat-conducting routes after being packaged, and a great heat-dissipating effect can be achieved.
Description
Technical field
The utility model relates to a kind of conducting wire frame structure, refers to the excellent radiating effect of a kind of tool especially, and the heat radiation conducting wire frame structure that can prolong light-emittingdiode and IC wafer useful life.
Background technology
Because IC wafer or light-emittingdiode are when work, usually be accompanied by quite high working temperature and be accumulated in IC wafer or the light emitting diode element, if the used heat that is accumulated in IC wafer or the light emitting diode element can't be discharged, then can reduce the useful life of IC wafer or light-emittingdiode, even can damage because temperature is too high, therefore, radiating component often is set additionally on IC wafer or light-emittingdiode, to improve radiating effect.
As mentioned above, can consult Taiwan patent announcement I371093 " light-emittingdiode radiator structure " patent of invention description and Fig. 2 thereof (for the utility model Fig. 1) as can be known, light-emittingdiode radiator structure 2, comprise a substrate 21, a LED Chips for Communication 22, a circuit board 23, a radiator 24 and a transparent encapsulating body 25, LED Chips for Communication 22 is arranged on the substrate 21, substrate 21 is arranged on the circuit board 23, and is electrically connected with circuit board 23, and circuit board 23 is connected with radiator 24.Transparent encapsulating body 25 is coated with sealing and protection LED Chips for Communication 22 with LED Chips for Communication 22, and substrate 21 is provided with an electrode 213, and electrode 213 extends to second surface 212 by the edge of the first surface 210 of substrate 21 through side 215; Wherein, LED Chips for Communication 22 adopts crystalline substance (Flip Chip) mode of covering, and is connected with electrode 213 on the substrate 21 by metal coupling 216 (as the tin ball etc.).Therefore, in the light-emittingdiode radiator structure 2, the heat that LED Chips for Communication 22 is sent is transferred to the second surface 212 of substrate 21 by being arranged at electrode 213 on the substrate 21 by the first surface 210 of substrate 21, transferred to the 4th surface 232 of circuit board 23 by the 3rd surface 231 of circuit board 23 by being opened in heat conduction through hole 230 on the circuit board 23 again, at last, heat transfers on the radiator 24 by the heat-conducting layer 233 between circuit board 23 and the radiator 24, and is distributed by radiator 24.
Though aforementioned light-emittingdiode radiator structure 2 has certain radiating effect, less than the heat conduction member of the high heat-conducting effect of tool, make that the radiating effect that is arranged at the radiator 24 on the circuit board 23 is little between LED Chips for Communication 22 and the circuit board 23; In addition, light-emittingdiode radiator structure 2 must be arranged on the circuit board 23 of tool radiator 24, is just had the purpose of its heat radiation and the radiating effect of desire performance, and therefore, its radiator structure is quite complicated, and also improves relatively on cost of manufacture.
See also Taiwan patent announcement I371093 " light-emittingdiode radiator structure " patent of invention description and Fig. 3 (for the utility model Fig. 2) more as can be known, the LED Chips for Communication 32 of light-emittingdiode radiator structure 3 realizes being electrically connected with electrode 313 by lead 314, corresponding LED Chips for Communication 32 present positions offer a tapped through hole on the substrate 31, be provided with a heat conduction double-screw bolt 316 in the tapped through hole, the material of heat conduction double-screw bolt 316 is high thermal conductivity materials, as: aluminium, tin, copper, silver, gold and composition thereof, its thickness is identical with substrate 31, and be bolted in the tapped through hole by screw thread 317, and the heat conduction double-screw bolt 316 on circuit board 33 counterpart substrates 31 offers plural heat conduction through hole 330, be filled with high rate of heat dissipation material in the heat conduction through hole 330, as: graphite, silica gel, epoxy resin etc. are to improve the radiating efficiency of heat conduction through hole 330.Therefore, the heat that light-emittingdiode radiator structure 3 distributes by LED Chips for Communication 32 mainly transfers on the circuit board 33 by the heat conduction double-screw bolt 316 that is arranged in the substrate 31, transfer on the radiator 34 by the heat conduction through hole 330 on the circuit board 33 again, because heat conduction double-screw bolt 316 directly contacts with LED Chips for Communication 32, and heat-transfer path is shorter, so have higher radiating efficiency.
Though light-emittingdiode radiator structure 3 has solved aforesaid problem, has improved radiating efficiency, between LED Chips for Communication 32 and the circuit board 33 less than the heat conduction member of the high heat-conducting effect of tool; In addition, light-emittingdiode radiator structure 3 unresolved aforementioned its radiator structure complexity, the problem that cost of manufacture is high carried still.
To sum up, prior art has as the shortcoming shown in following:
1, be subject to specific radiator structure: when the light-emittingdiode encapsulating structure is arranged at when not having the circuit board of heat conduction through hole and radiator, its heat conduction and radiating effect certainly will be limited relatively.
2, radiator structure complexity: must the heat conduction through hole is set and connect radiator at circuit board, just be had the purpose of its heat radiation and the radiating effect of desire performance, make its radiator structure quite complicated.
3, cost of manufacture height: because the radiator structure complexity makes the cost of manufacture of radiator structure improve relatively.
The utility model content
In order to solve the aforementioned problems in the prior, the utility model provides a kind of heat radiation conducting wire frame structure, except the heat of light-emittingdiode or IC wafer work generation being given the fin via lead frame heat conduction, heat can also be seen through extra heat conduction back-up block or heat conduction raised face or one of them heat conduction of heat conduction weld pad three and give fin, have multiple thermally conductive pathways after making light-emittingdiode (or IC wafer) encapsulation, reach excellent radiating effect.
The heat radiation conducting wire frame structure that the utility model provides comprises lead frame and radiator; Lead frame comprises interior pin and the outer pin that is connected, and forms an accommodation space between interior pin and the outer pin; Radiator is arranged in the accommodation space, comprises the insulating heat-conductive layer of the interior pin that connects lead frame and the fin of connection insulating heat-conductive layer.
As preferred version, interior pin top is connected to light-emittingdiode or IC wafer to cover crystalline substance (Flip Chip) technical battery.
As preferred version, radiator also comprises the heat conduction back-up block that is arranged at the fin top and connects light-emittingdiode or IC wafer by the insulating heat-conductive layer.The heat energy that light-emittingdiode or IC wafer produce can be given fin via heat conduction back-up block and interior pin heat conduction.
As preferred version, the outstanding heat conduction raised face that forms of the part of radiator.The heat energy that light-emittingdiode or IC wafer produce can be given fin via heat conduction raised face and interior pin heat conduction.
As preferred version, the part of radiator is extruded with by linking the heat conduction weld pad that rod connects, and forms hollow structure.The heat energy that light-emittingdiode or IC wafer produce can be given fin via heat conduction weld pad and interior pin heat conduction.
As preferred version, interior pin top is connected to light-emittingdiode or IC wafer with routing (Wire Bond) technical battery.
As priority scheme, radiator also comprises the heat conduction back-up block that is arranged at the fin top and connects light-emittingdiode or IC wafer by the insulating heat-conductive layer.The heat energy that light-emittingdiode or IC wafer produce can be given fin via heat conduction back-up block and interior pin heat conduction.
As preferred version, the outstanding heat conduction raised face that forms of the part of radiator.The heat energy that light-emittingdiode or IC wafer produce can be given fin via heat conduction raised face and interior pin heat conduction.
As preferred version, the part of radiator is extruded with by linking the heat conduction weld pad that rod connects, and forms hollow structure.The heat energy that light-emittingdiode or IC wafer produce can be given fin via heat conduction weld pad and interior pin heat conduction.
As preferred version, lead frame is that Copper Foil or iron foil are made.
As preferred version, the insulating heat-conductive layer is amide compound, epoxy resin or silica gel.
As preferred version, radiator is aluminium or copper material.
As mentioned above, the utlity model has following beneficial effect:
1, heat radiation conducting wire frame structure described in the utility model, except the heat of light-emittingdiode or IC wafer work generation being given the fin via lead frame heat conduction, also heat can be seen through extra heat conduction back-up block or heat conduction raised face or one of them heat conduction of heat conduction weld pad three and give fin, have multiple thermally conductive pathways after making light-emittingdiode (or IC wafer) encapsulation, can reach excellent radiating effect;
2, heat radiation conducting wire frame structure described in the utility model by the heat-conducting mode of multipath, makes the heat radiation lead frame have excellent radiating effect, and light-emittingdiode or IC wafer can be increased the service life.。
Description of drawings
Fig. 1 is existing light-emittingdiode radiator structure schematic diagram ();
Fig. 2 is existing light-emittingdiode radiator structure schematic diagram (two);
Fig. 3 is used for the composite packing structure schematic diagram () of light-emittingdiode for the utility model;
Fig. 4 is the composite packing structure schematic diagram (two) of the utility model light-emittingdiode;
Fig. 5 is the composite packing structure schematic diagram (three) of the utility model light-emittingdiode;
Fig. 6 is the composite packing structure schematic diagram (four) of the utility model light-emittingdiode;
Fig. 7 A is the composite packing structure schematic diagram () of the utility model IC wafer;
Fig. 7 B is the composite packing structure schematic diagram (two) of the utility model IC wafer;
Fig. 8 is the wire bonding and packaging structure schematic diagram of the utility model light-emittingdiode;
Fig. 9 is the wire bonding and packaging structure schematic diagram of the utility model IC wafer.
Description of reference numerals:
(prior art)
2 light-emittingdiode radiator structures; 21 substrates;
210 first surfaces; 212 second surfaces;
213 electrodes; 215 sides;
22 LED Chips for Communication; 23 circuit boards;
230 heat conduction through holes; 231 the 3rd surfaces;
232 the 4th surfaces; 233 heat-conducting layers;
24 radiators; 25 transparent encapsulating body;
216 metal couplings; 3 light-emittingdiode radiator structures;
31 substrates; 313 electrodes;
314 leads; 316 heat conduction double-screw bolts;
317 screw threads; 32 LED Chips for Communication;
33 circuit boards; 330 heat conduction through holes;
34 radiators;
(the utility model)
40 lead frames; 400 accommodation spaces;
401 metal couplings; Pin in 402;
403 outer pin; 41 light-emittingdiodes;
410 leads; 42 radiators;
420 insulating heat-conductive layers; 421 fin;
422 heat conduction weld pads; 423 link rod;
424 heat conduction back-up blocks; 425 insulating heat-conductive layers;
426 heat conduction raised faces; 43 reflectors;
44 thermosets; 50 lead frames;
501 metal couplings; Pin in 502;
51 IC wafers; 510 leads;
52 radiators; 520 insulating heat-conductive layers;
521 fin; 522 heat conduction weld pads;
523 link rod; 524 insulating heat-conductive layers.
Embodiment
For ease of to the purpose of this utility model, effect with structural feature more detailed clear and definite understanding can be arranged, list preferred embodiment as described below and in conjunction with the accompanying drawings.
See also Fig. 3.
At first, as shown in Figure 3, heat radiation conducting wire frame structure described in the utility model, what can be applicable to light-emittingdiode covers crystalline substance (Flip Chip) encapsulating structure, mainly comprises:
Therefore, from the above, when then when the light-emittingdiode 41 of heat radiation lead frame is started working, the heat that produces during light-emittingdiode 41 work has the radiator 42 of insulating heat-conductive layer 420 and fin 421 via interior pin 402 guiding of metal coupling 401, lead frame 40, so that have excellent radiating effect behind light-emittingdiode 41 chip packages, can prolong the useful life of light-emittingdiode 41.
See also Fig. 4, and Fig. 3 is consulted in cooperation.
As shown in Figure 4, according to the utility model radiator structure shown in Figure 3, radiator 42 of the present utility model also comprises and is arranged at fin 421 tops and the heat conduction back-up block 424(between the interior pin 402 of lead frame 40 is aluminium, the copper material), make heat conduction back-up block 424 to connect light-emittingdiode 41 by insulating heat-conductive layer 425, so that the heat that produces during light-emittingdiode 41 work can pass through extra insulating heat-conductive layer 425, heat conduction back-up block 424 passes to fin 421, the heat that produces when making light-emittingdiode 41 work can pass more direct and more efficiently to radiator 42, improves the radiating effect of light-emittingdiode 41.
See also Fig. 5, and Fig. 4 is consulted in cooperation.
According to the utility model radiator structure shown in Figure 4, except forming above the fin 421 the heat conduction back-up block 424, the part of radiator 42 is projected between the interior pin 402 of lead frame 40, to form heat conduction raised face 426, heat conduction raised face 426 can connect light-emittingdiode 41 by insulating heat-conductive layer 425, wherein, be filled with thermosets 44 between lead frame 40 and the radiator 42; Therefore, aforesaid heat conduction raised face 426 can carry out the heat conduction operation to light-emittingdiode 41, and the user can be averaged out between material cost and heat conduction, radiating effect, under cost-effective prerequisite, has excellent radiating effect equally.
See also Fig. 6, and Fig. 5 is consulted in cooperation.
As shown in Figure 6, also can be provided with on the fin 421 of the present utility model by linking the heat conduction weld pads 422 that rod 423 connects, thus heat conduction weld pad 422 with link excellent 423 and fin 421 between form hollow structure; Accordingly, link rod 423 and can be used to extra support heat conduction weld pad 422 and light-emittingdiode 41, also can conduct to fin 421 by linking rod 423 heats with heat conduction weld pad 422, therefore, can significantly save the use amount of heat conduction weld pad 422 materials, can have radiating effect again simultaneously.
See also Fig. 7 A, 7B, and Fig. 6 is consulted in cooperation.
As shown in the figure, the radiator structure that covers crystalline substance (Flip Chip) encapsulating structure that the utility model is applied to the IC wafer duplicates with crystalline substance (Flip Chip) encapsulating structure (as Fig. 3,4,5,6) that covers that is applied to light-emittingdiode, therefore, the utility model is only represented with Fig. 7 A and Fig. 7 B covering on crystalline substance (Flip Chip) encapsulating structure of IC wafer.
By Fig. 7 A and Fig. 7 B as can be known, heat radiation conducting wire frame structure described in the utility model, what also can be applicable to the IC wafer covers crystalline substance (Flip Chip) encapsulating structure, makes IC wafer 51 can be connected on the interior pin 502 of lead frame 50, wherein, be filled with encapsulating material 53 between lead frame 50 and the radiator 52; Therefore, when 51 work of IC wafer, pin 502, insulating heat-conductive layer 520 and fin 521 dispelled the heat in its heat that produces can lead in regular turn by metal coupling 501, and simultaneously also can by with IC wafer 51 direct-connected insulating heat-conductive layers 524 with heat lead in regular turn heat conduction weld pad 522, link rod 523 and fin 521 dispels the heat, thermally conductive pathways with multichannel, promote the radiating effect of IC wafer 51, can prolong the useful life of IC wafer 51 equally.
See also Fig. 8,9, and Fig. 6,7A and 7B are consulted in cooperation.
Because it is identical that the utility model is used the heat radiation conducting wire frame structure of routing or Flip Chip packaging LED or IC wafer, therefore, the utility model Fig. 8 only is expressed as routing (Wire Bond) encapsulating structure of light-emittingdiode according to the heat radiation conducting wire frame structure of Fig. 6, the utility model Fig. 9 only is expressed as routing (Wire Bond) encapsulating structure of IC wafer according to the heat radiation conducting wire frame structure of Fig. 7 A and Fig. 7 B;
As shown in Figure 8, heat radiation conducting wire frame structure of the present utility model also can be applicable to routing (Wire Bond) encapsulating structure of light-emittingdiode, and it mainly utilizes the rod 423 that links on the fin 421 to support heat conduction weld pad 422, insulating heat-conductive layer 425; Accordingly, when light-emittingdiode 41 work produce heat, heat can be dispelled the heat by lead in regular turn interior pin 402, insulating heat-conductive layer 420 and the fin 421 of lead frame 40 of lead 410, perhaps heat can be simultaneously see through insulating heat-conductive layer 425 lead in regular turn heat conduction weld pad 422, link rod 423 and fin 421 dispels the heat, the heat radiation lead frame that makes the utility model be applied to the light-emittingdiode chip package has the multichannel thermally conductive pathways and carries out the heat conduction operation, reaches the excellent radiating effect of light-emittingdiode 41 after encapsulation.
Again as shown in Figure 9, heat radiation conducting wire frame structure of the present utility model also can be applicable to routing (Wire Bond) encapsulating structure of IC wafer, it utilizes the rod 523 that links on the fin 521 to support heat conduction weld pad 522, insulating heat-conductive layer 524 and IC wafer 51 equally, make IC wafer 51 can on insulating heat-conductive layer 524, carry out the routing processing procedure, to be electrically connected with lead frame 50; Accordingly, when 51 work of IC wafer produce heat, heat can be dispelled the heat by interior pin 502, insulating heat-conductive layer 520 and the fin 521 of lead 510 guiding lead frames 50, perhaps heat can be simultaneously see through insulating heat-conductive layer 524 lead in regular turn heat conduction weld pad 522, link rod 523 and fin 521 dispels the heat, the heat radiation lead frame that makes the utility model be applied to IC wafer routing (Wire Bond) encapsulation has the multichannel thermally conductive pathways and carries out the heat conduction operation, reaches the excellent radiating effect of IC wafer 51 after encapsulation.
Therefore, take a broad view of as can be known above-mentioned, heat radiation conducting wire frame structure of the present utility model has excellent heat conduction and radiating effect, what can be applicable to light-emittingdiode 41 or IC wafer 51 covers crystalline substance (Flip Chip) or routing (Wire Bond) encapsulating structure, make heat radiation conducting wire frame structure of the present utility model have wide range of applications, practical function is splendid.
The above is preferred embodiment of the present utility model only, is not for restriction protection range of the present utility model.
Claims (12)
1. a heat radiation conducting wire frame structure is characterized in that, comprising:
Lead frame comprises the interior pin and the outer pin that are connected, forms an accommodation space between interior pin and the outer pin;
Radiator is arranged in the accommodation space, comprises the insulating heat-conductive layer of the interior pin that connects lead frame and the fin of connection insulating heat-conductive layer.
2. heat radiation conducting wire frame structure as claimed in claim 1 is characterized in that, interior pin top is connected with light-emittingdiode or IC wafer with Flip Chip.
3. heat radiation conducting wire frame structure as claimed in claim 2 is characterized in that, radiator also comprises the heat conduction back-up block that is arranged at the fin top and connects light-emittingdiode or IC wafer by the insulating heat-conductive layer.
4. heat radiation conducting wire frame structure as claimed in claim 2 is characterized in that, the outstanding heat conduction raised face that forms of the part of radiator.
5. heat radiation conducting wire frame structure as claimed in claim 2 is characterized in that, the part of radiator is extruded with by linking the heat conduction weld pad that rod connects, and forms hollow structure.
6. heat radiation conducting wire frame structure as claimed in claim 1 is characterized in that, interior pin top is connected to light-emittingdiode or IC wafer with routing technical battery.
7. heat radiation conducting wire frame structure as claimed in claim 6 is characterized in that, radiator also comprises the heat conduction back-up block that is arranged at the fin top and connects light-emittingdiode or IC wafer by the insulating heat-conductive layer.
8. heat radiation conducting wire frame structure as claimed in claim 6 is characterized in that, the outstanding heat conduction raised face that forms of the part of radiator.
9. heat radiation conducting wire frame structure as claimed in claim 6 is characterized in that, the part of radiator is extruded with by linking the heat conduction weld pad that rod connects, and forms hollow structure.
10. heat radiation conducting wire frame structure as claimed in claim 1 is characterized in that, lead frame is that Copper Foil or iron foil are made.
11. heat radiation conducting wire frame structure as claimed in claim 1 is characterized in that, the insulating heat-conductive layer is amide compound, epoxy resin or silica gel.
12. heat radiation conducting wire frame structure as claimed in claim 1 is characterized in that, radiator is aluminium or copper material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320177056 CN203192859U (en) | 2013-04-10 | 2013-04-10 | Heat-dissipating lead frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320177056 CN203192859U (en) | 2013-04-10 | 2013-04-10 | Heat-dissipating lead frame structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203192859U true CN203192859U (en) | 2013-09-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320177056 Expired - Fee Related CN203192859U (en) | 2013-04-10 | 2013-04-10 | Heat-dissipating lead frame structure |
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| CN (1) | CN203192859U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304807A (en) * | 2014-07-18 | 2016-02-03 | 首尔伟傲世有限公司 | Emitting diode, illuminator and manufacturing method thereof |
| CN105514062A (en) * | 2016-01-15 | 2016-04-20 | 中山芯达电子科技有限公司 | Compact type chip packaging structure |
| US9941455B2 (en) | 2014-06-03 | 2018-04-10 | Seoul Viosys Co., Ltd. | Light emitting diode and light emitting device including the same |
| CN109616452A (en) * | 2018-10-26 | 2019-04-12 | 武汉光迅科技股份有限公司 | A kind of radiating subassembly, corresponding radiator and corresponding circuit board |
-
2013
- 2013-04-10 CN CN 201320177056 patent/CN203192859U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9941455B2 (en) | 2014-06-03 | 2018-04-10 | Seoul Viosys Co., Ltd. | Light emitting diode and light emitting device including the same |
| CN105304807A (en) * | 2014-07-18 | 2016-02-03 | 首尔伟傲世有限公司 | Emitting diode, illuminator and manufacturing method thereof |
| CN105304807B (en) * | 2014-07-18 | 2018-04-20 | 首尔伟傲世有限公司 | Light emitting diode, light-emitting device and its manufacture method |
| CN105514062A (en) * | 2016-01-15 | 2016-04-20 | 中山芯达电子科技有限公司 | Compact type chip packaging structure |
| CN109616452A (en) * | 2018-10-26 | 2019-04-12 | 武汉光迅科技股份有限公司 | A kind of radiating subassembly, corresponding radiator and corresponding circuit board |
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