CN110676232A - Semiconductor device packaging structure, manufacturing method thereof and electronic equipment - Google Patents

Semiconductor device packaging structure, manufacturing method thereof and electronic equipment Download PDF

Info

Publication number
CN110676232A
CN110676232A CN201910819051.XA CN201910819051A CN110676232A CN 110676232 A CN110676232 A CN 110676232A CN 201910819051 A CN201910819051 A CN 201910819051A CN 110676232 A CN110676232 A CN 110676232A
Authority
CN
China
Prior art keywords
semiconductor device
heat dissipation
substrate
dissipation plate
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910819051.XA
Other languages
Chinese (zh)
Other versions
CN110676232B (en
Inventor
胡志祥
谌海涛
张兴中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Priority to CN201910819051.XA priority Critical patent/CN110676232B/en
Publication of CN110676232A publication Critical patent/CN110676232A/en
Application granted granted Critical
Publication of CN110676232B publication Critical patent/CN110676232B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The application provides a semiconductor device packaging structure, a manufacturing method thereof and electronic equipment. The semiconductor device packaging structure comprises a substrate, a semiconductor device, a connecting bridge and a radiating block, wherein: a signal pin is arranged on the first surface of the substrate; the semiconductor device is arranged on the first surface of the substrate, and an electrode is arranged on one surface of the semiconductor device, which is far away from the substrate; the connecting bridge comprises a first connecting part, a second connecting part and a supporting part, wherein the first connecting part is arranged on the semiconductor device and is electrically connected with the electrode, the second connecting part is arranged on the signal pin and is electrically connected with the signal pin, and the supporting part is erected and connected between the first connecting part and the second connecting part; the radiating block is arranged on one side of the supporting part, which is far away from the substrate.

Description

Semiconductor device packaging structure, manufacturing method thereof and electronic equipment
Technical Field
The present disclosure relates to electronic devices, and particularly to a semiconductor device package structure, a method for manufacturing the same, and an electronic device.
Background
In a plurality of fields such as power systems, data centers, electric vehicles, new energy applications and the like, it is a common means to realize energy conversion by using power electronic equipment, and a power semiconductor device plays a crucial role as a basic component unit of a power electronic converter. A DBC (direct bonding copper clad ceramic) is widely used in power semiconductor device packaging due to its characteristics such as high thermal conductivity, high electrical insulation, and high mechanical strength, and the specific packaging structure can be generally divided into a single-sided DBC package and a double-sided DBC package. The single-sided DBC packaging structure has the advantages that the process is simple, the manufacturing cost is low, and the single-sided DBC packaging structure can only realize single-sided heat dissipation, so that the single-sided DBC packaging structure is mostly applied to scenes with low requirements on heat dissipation capacity; the double-sided DBC package structure is mostly applied to high power density scenes due to its better heat dissipation capability, but the manufacturing process thereof is difficult and the cost is high. Therefore, how to provide a semiconductor device package structure with a relatively simple manufacturing process and capable of achieving double-sided heat dissipation is a technical problem to be solved urgently at present.
Disclosure of Invention
The application provides a semiconductor device packaging structure, a manufacturing method thereof and electronic equipment.
In a first aspect, the present application provides a semiconductor device package structure, which includes a substrate and a semiconductor device, wherein the substrate is used for bearing the semiconductor device and dissipating heat of the semiconductor device, and the semiconductor device is disposed on a first surface of the substrate. When the semiconductor device is electrically connected with the substrate, the first surface of the substrate is also provided with a signal pin, one surface of the semiconductor device, which is far away from the substrate, is provided with an electrode, the semiconductor device packaging structure also comprises a connecting bridge used for electrically connecting the electrode with the signal pin, and when the semiconductor device packaging structure is specifically arranged, the connecting bridge comprises a first connecting part, a second connecting part and a supporting part, wherein the first connecting part is arranged on the semiconductor device and is electrically connected with the electrode of the semiconductor device; the second connecting part is arranged on the signal pin and is electrically connected with the signal pin; the supporting part is erected between the first connecting part and the second connecting part and is respectively connected with the first connecting part and the second connecting part, so that the electrode and the signal pin can be conducted through the connecting bridge. In addition, the semiconductor device packaging structure further comprises a radiating block, wherein the radiating block is arranged on one side of the supporting portion, which is far away from the substrate, so that part of heat generated by the semiconductor device during working can be transferred to the substrate below the semiconductor device, the heat is dissipated outwards through the substrate, the other part of heat can be transferred to the radiating block above the semiconductor device through the connecting bridge, and the heat is dissipated outwards through the radiating block, so that the semiconductor device packaging structure realizes double-sided heat dissipation of the semiconductor device through the substrate and the radiating block.
The application provides a semiconductor device packaging structure through set up the radiating block on connecting the bridge for the production of semiconductor device during operation heat can be simultaneously by two routes of the radiating block of below base plate and top and give off, has consequently realized the two-sided heat dissipation to semiconductor device, and this semiconductor device packaging structure's preparation technology process is also comparatively simple.
When the supporting part is connected with the first connecting part and the second connecting part, specifically, one side of the supporting part is connected with one end of the first connecting part, which is far away from the semiconductor device, and the other side of the supporting part is connected with one end of the second connecting part, which is far away from the signal pin; in order to improve the structural reliability of the semiconductor device packaging structure, the heat dissipation block should be placed horizontally as much as possible, so that the supporting portion for bearing the heat dissipation block needs to be arranged horizontally.
In order to further improve the structural reliability of the semiconductor device packaging structure, a groove is further formed in the surface of one side, away from the substrate, of the supporting portion, and the cross section of the groove is matched with that of the radiating block, so that one end, facing the supporting portion, of the radiating block can be clamped in the groove.
When the device is specifically arranged, each part of the connecting bridge can be independently designed and then fixed into a whole through welding; or, the connecting bridge can also be an integrally bent structure so as to simplify the manufacturing process.
In a specific embodiment, the heat slug is a ceramic material, such as an alumina ceramic, an aluminum nitride ceramic, or a silicon nitride ceramic.
In another specific embodiment, the heat dissipation block is made of metal material with good thermal conductivity such as copper and aluminum.
The substrate can be a DBC substrate with high thermal conductivity and high electrical insulation performance, and the DBC substrate comprises a lower layer, an intermediate layer and an upper layer which are stacked, wherein the upper layer and the lower layer can be copper layers with high electrical conductivity, and the intermediate layer can be a ceramic layer with insulation and heat transfer; the semiconductor device is disposed on the upper copper layer.
In order to further improve semiconductor device packaging structure's heat-sinking capability, semiconductor device packaging structure still includes first heating panel and second heating panel, and wherein, first heating panel sets up on the second face opposite with first face on the base plate for dispel the heat to the base plate, and the second heating panel sets up in the one side that the radiating block deviates from the connecting bridge, is used for dispelling the heat to the radiating block, thereby makes base plate and radiating block can rapid cooling dispel the heat to semiconductor device more effectively.
In order to improve the connection strength of each part and effectively protect the semiconductor device, the semiconductor device packaging structure further comprises a packaging adhesive layer, wherein the packaging adhesive layer is arranged between the first heating panel and the second heating panel and used for wrapping the substrate, the semiconductor device, the connecting bridge and the radiating block.
When the second heat dissipation plate and the heat dissipation block are both made of metal materials, the semiconductor device packaging structure further comprises an insulating layer, and the insulating layer is arranged between the second heat dissipation plate and the heat dissipation block so as to avoid electric connection between the second heat dissipation plate and the heat dissipation block.
In a second aspect, the present application further provides a method for manufacturing a semiconductor device package structure, where the method includes the following steps:
forming signal pins on a first surface of a substrate;
preparing an electrode on one surface of the semiconductor device, arranging the semiconductor device on the first surface of the substrate, and enabling the surface of the semiconductor device provided with the electrode to be away from the substrate;
electrically connecting the electrode with the signal pin through a connecting bridge, wherein the connecting bridge comprises a first connecting part, a second connecting part and a supporting part, the first connecting part is arranged on the semiconductor device and is electrically connected with the electrode, the second connecting part is arranged on the signal pin and is electrically connected with the signal pin, and the supporting part is erected and connected between the first connecting part and the second connecting part;
the radiating block is arranged on one side of the supporting part, which is far away from the substrate.
The semiconductor device packaging structure manufactured by the method has the advantages that the radiating block is arranged on the connecting bridge, so that heat generated by the semiconductor device during working can be radiated by the substrate below and the radiating block above at the same time, double-sided radiation of the semiconductor device is realized, and the manufacturing process is simple.
In a specific embodiment, the method for manufacturing the semiconductor device package structure further includes:
a first heat dissipation plate is arranged on a second surface, opposite to the first surface, of the substrate;
arranging a packaging adhesive layer on the first heat dissipation plate, wherein the packaging adhesive layer is used for wrapping the substrate, the semiconductor device, the connecting bridge and the heat dissipation block;
and a second heat dissipation plate is arranged on one side of the packaging adhesive layer, which deviates from the first heat dissipation plate.
Before the step of arranging the second heat dissipation plate on the side of the packaging adhesive layer departing from the first heat dissipation plate, the manufacturing method of the semiconductor device packaging structure further comprises the following steps of:
grind the one side that deviates from first heating panel to the encapsulation glue film, make the radiating block expose in the encapsulation glue film and deviate from one side of first heating panel to make the radiating block can with the second heating panel direct contact of follow-up setting, guarantee the radiating effect of radiating block.
In a third aspect, the present application further provides an electronic device, where the electronic device may be a device such as a high-power supply applied in a plurality of fields such as a power system, a data center, an electric vehicle, or a new energy source, and the electronic device includes the semiconductor device package structure in any possible implementation of the first aspect.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor device package structure according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a semiconductor device package structure according to another embodiment of the present application;
FIG. 3 is a schematic view of a substrate according to an embodiment of the present disclosure;
FIG. 4 is a schematic structural diagram of a connecting bridge according to an embodiment of the present application;
fig. 5 is a top view of a semiconductor device package structure according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a semiconductor device package structure according to still another embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the present application will be further described in detail with reference to the accompanying drawings.
At present, when a power semiconductor device on a high-power occasion is packaged, single-sided DBC packaging or double-sided DBC packaging is mostly adopted, and in the two packaging modes, the manufacturing process of a single-sided DBC packaging structure is simpler, but the heat dissipation capability of the single-sided DBC packaging structure is relatively poorer, and the double-sided DBC packaging structure with better heat dissipation capability is not applied to energy production due to the complex manufacturing process of the double-sided DBC packaging structure. Based on this, the application provides a semiconductor device packaging structure, which is used for realizing double-sided heat dissipation of a semiconductor device on the premise that the manufacturing process is relatively simple, so that better balance between heat dissipation capacity and reliable application is obtained.
The semiconductor device packaging structure provided by the embodiment of the application can be applied to electronic equipment, and the electronic equipment can be equipment such as high-power supplies applied to a plurality of fields such as power systems, data centers, electric vehicles or new energy sources. Referring to fig. 1 and fig. 2, a semiconductor device package structure provided by the present application includes a substrate 10, a semiconductor device 20, a connecting bridge 30, and a heat dissipation block 40, where the substrate 10 is used for carrying the semiconductor device 20 and dissipating heat of the semiconductor device 20, and when specifically configured, the substrate 10 includes a first surface 11 and a second surface 12 opposite to each other, and the first surface 11 of the substrate 10 is provided with signal pins 13; the semiconductor device 20 is mounted on the first surface 11 of the substrate 10, including a front surface disposed away from the substrate 10 and a back surface disposed toward the substrate 10, both the front surface and the back surface of the semiconductor device 20 can be provided with electrodes 21, for the electrodes 21 disposed on the back surface of the semiconductor device 20, the electrical connection with the substrate 10 can be directly realized through a mounting process, and for the electrodes 21 disposed on the front surface of the semiconductor device 20, the electrical connection with the substrate needs to be realized through a connection bridge 30, in the specific arrangement, the connection bridge 30 is erected between the semiconductor device 20 and the signal pins 13 of the substrate 10, one end of the connection bridge is electrically connected with the signal pins 13, and the other end of the connection bridge is electrically connected with the electrodes 21 on the front surface of the semiconductor device 20, so as to conduct the signal pins 11 with the electrodes; the heat dissipation block 40 is disposed on a side of the connection bridge 30 away from the substrate 10, and is used for absorbing heat transferred to the connection bridge 30 when the semiconductor device is in operation.
As shown in fig. 1 and fig. 3, the substrate 10 in the embodiment of the present invention may be specifically a DBC substrate having high thermal conductivity and high electrical insulation performance, so that heat generated by the semiconductor device 20 during operation can be dissipated as soon as possible, at this time, the substrate 10 may include a stacked three-layer structure, which is respectively a high-conductivity material located in the lower layer 14, an insulating heat-transfer material located in the intermediate layer 15, and a high-conductivity material located in the upper layer 16, when specifically configured, the intermediate layer 15 may be specifically a ceramic layer, the upper layer 16 and the lower layer 14 may be specifically copper layers, the semiconductor device 20 is disposed on the upper layer 16 copper layer of the substrate, and at this time, a surface of the upper layer copper layer is formed as a first surface for bearing the semiconductor device. The upper layer 16 copper layer may form a plurality of functional regions through a patterning process for implementing different electrical functions, for example, in the embodiment shown in fig. 1, the upper layer 16 copper layer includes a device mounting region 17 for carrying the semiconductor device 20 and signal pins 13 for electrically connecting with electrodes on the front side of the semiconductor device, and in a specific design, the device mounting region and the signal pins need to be spaced apart from each other to avoid the conductivity between the electrodes on the front side and the back side of the semiconductor device and affecting the performance of the semiconductor device. It should be noted that, when forming the device mounting region 17 and the signal pins 13, the distance between the two should be ensured to be not less than the corresponding electrical insulation distance of the semiconductor device 20 at the maximum operating voltage, so that the electronic apparatus can operate reliably.
In the embodiment of the present application, the semiconductor device 20 may be an Insulated Gate Bipolar Transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a silicon carbide diode (sic diode, etc.) in the prior art, and the present application is not limited in this respect. When the semiconductor device 20 is disposed on the first surface 11 of the substrate 10, soldering or silver sintering may be specifically adopted, so that the semiconductor device 20 and the substrate 10 can be fixedly connected, and the electrode 21 on the back surface of the semiconductor device 20 and the device mounting region 17 of the upper layer 16 copper layer can be electrically connected. The specific polarities of the front and back electrodes 21 of the semiconductor device 20 are not limited, for example, when the semiconductor device 20 is a MOSFET, the electrode 21 on the front side of the semiconductor device 20 may be a source, and the electrode 21 on the back side of the semiconductor device 20 may be a drain.
When the connection bridge is disposed, referring to fig. 1 and 4, the connection bridge 30 may include a first connection portion 31, a second connection portion 32 and a support portion 33, wherein the first connection portion 31 is disposed on the semiconductor device 20, the first connection portion 31 is electrically connected to the electrode 21, the second connection portion 32 is disposed on the signal pin 13 and electrically connected to the signal pin 13, and the support portion 33 is disposed between the first connection portion 31 and the second connection portion 32 to connect the two, so as to connect the electrode 21 and the signal pin 13.
In the embodiment of the present application, when the support portion 33 is connected to the first connection portion 31 and the second connection portion 32, as shown in fig. 1, one side of the support portion 33 is connected to one end of the first connection portion 31 away from the semiconductor device 20, and the other side is connected to one end of the second connection portion 32 away from the signal pin 13. Each part of the connecting bridge 30 can be designed independently and then connected into a whole by welding and other modes; alternatively, the connecting bridge 30 may also be an integrally bent structure, so that the manufacturing process of the semiconductor package device may be simplified to some extent. In addition, since the connecting bridge 30 needs to electrically connect the semiconductor device 20 and the substrate 10, it needs to have good conductivity, and in the embodiment of the present invention, the connecting bridge 30 may be made of a metal material with high conductivity, such as a copper material, an aluminum material, or a silver material.
When the heat slug 40 is disposed on the connecting bridge 30, referring to fig. 1, the heat slug 40 is specifically disposed on a side of the supporting portion 33 away from the substrate 10, so that a part of heat generated by the semiconductor device 20 during operation is transferred to the substrate 10 below the supporting portion, and is dissipated outwards through the substrate 10, and another part of heat is transferred to the supporting portion 33 through the first connecting portion 31 above the supporting portion, and is transferred to the heat slug 40 through the supporting portion 33, and is dissipated outwards through the heat slug 40. That is to say, the semiconductor device package structure realizes double-sided heat dissipation of the semiconductor device 20 through the lower substrate 10 and the upper heat dissipation block 40, and the structure and the manufacturing process are simple, and only one heat dissipation block 40 needs to be added on the basis of a single-sided DBC package structure, so the cost is relatively low.
The specific material of the heat dissipation block 40 is not limited, for example, in a specific embodiment, the heat dissipation block 40 can be made of a ceramic material, such as alumina ceramic with low cost, or aluminum nitride ceramic with excellent heat conductivity, or silicon nitride ceramic with high reliability, etc., and then the ceramic heat dissipation block can be fixed on the surface of the supporting portion 33 by welding or silver sintering, etc.; for another example, in another specific embodiment, the heat dissipation block 40 may be made of a metal material with good thermal conductivity such as copper and aluminum, and in this case, the metal heat dissipation block may be fixed to the surface of the support portion 33 by welding or silver sintering.
In addition, in order to improve the structural reliability of the semiconductor device package structure, as shown in fig. 1 and fig. 4, a groove 34 may be further formed on a side surface of the supporting portion 33 away from the substrate 10, and a cross-sectional shape of the groove 34 is matched with a cross-sectional shape of the heat slug 40, so that an end of the heat slug 40 facing the supporting portion 33 can be clamped in the groove 34.
As shown in fig. 1, the semiconductor device package further includes a first heat dissipation plate 50 and a second heat dissipation plate 60, wherein the first heat dissipation plate 50 is disposed on the second surface 12 of the substrate 10 to dissipate heat from the substrate 10, and the second heat dissipation plate 60 is disposed on a side of the heat dissipation block 40 away from the connection bridge 30 to dissipate heat from the heat dissipation block 40. When the first heat dissipation plate 50 and the second heat dissipation plate 60 are specifically disposed, the first heat dissipation plate 50 and the second heat dissipation plate 60 may be made of a metal material with good thermal conductivity, such as copper, aluminum, and the like, which is not limited in the present application. In this way, the substrate 10 is cooled by the first heat dissipation plate 50, so that the substrate 10 can be cooled rapidly to dissipate heat of the semiconductor device 20 more effectively; the second heat dissipation plate 60 dissipates heat from the heat dissipation block 40, so that the heat dissipation block 40 can be cooled rapidly to dissipate heat from the semiconductor device 20 more effectively.
It is understood that, in order to transfer the heat of the heat dissipation block 40 to the second heat dissipation plate 60 as quickly as possible, the heat dissipation block 40 may be horizontally disposed as possible to maximize the contact area between the heat dissipation block 40 and the second heat dissipation plate 60, and in this case, the support portion 33 supporting the heat dissipation block 40 needs to be horizontally disposed. Therefore, in the embodiment of the present application, when both sides of the supporting portion 33 are connected to the end of the first connection portion 31 away from the semiconductor device 20 and the end of the second connection portion 32 away from the signal pin 13, respectively, the supporting portion 33 can be horizontally disposed by making the end of the first connection portion 31 away from the semiconductor device 21 and the end of the second connection portion 32 away from the signal pin 13 coplanar.
In order to improve the connection strength of each component and effectively protect the semiconductor device 20, the semiconductor device package structure provided in the embodiment of the present application further includes a package adhesive layer 70, where the package adhesive layer 70 is disposed between the first heat dissipation plate 50 and the second heat dissipation plate 60 and used for wrapping the substrate 10, the semiconductor device 20, the connection bridge 30, and the heat dissipation block 40.
Specifically, when the package adhesive layer 70 is formed, in an embodiment of the present application, the above components may be directly packaged on the first heat dissipation plate 50 through a dispensing process, after the molding compound is cured into a layer structure, the second heat dissipation plate 60 is disposed on the molding compound layer 70, it should be noted that, when this method is adopted, the heat dissipation block 40 may be completely wrapped by the molding compound layer 70, in order not to affect the heat conduction between the heat dissipation block 50 and the second heat dissipation plate 60, before the second heat dissipation plate 60 is placed, one side of the molding compound layer 70 departing from the first heat dissipation plate 50 needs to be ground, so that the heat dissipation block 40 is exposed at one side of the molding compound layer 70 departing from the first heat dissipation plate 50, and thus can be directly contacted with the subsequently disposed second heat dissipation plate 60 for heat dissipation.
In another embodiment of the present application, the encapsulation adhesive layer may be formed by filling after the second heat dissipation plate is disposed. When the glue filling device is specifically implemented, a relatively closed filling cavity is formed between the first heat dissipation plate and the second heat dissipation plate through the frame plate and other structures, all the parts are located in the filling cavity, the frame plate is provided with the glue inlet and the glue discharging port respectively, glue is filled into the filling cavity through the glue inlet until the glue discharging port has a trace amount of glue to overflow, so that the space in the filling cavity except for all the parts is completely filled, and a filling glue layer is formed after the glue is cured. In this embodiment, the heat dissipation block and the second heat dissipation plate are fixed relatively before the adhesive filling layer is formed, so that the grinding step can be omitted.
It should be noted that, referring to fig. 5, the semiconductor device package structure may further include a pin 80, one end of the pin 80 is electrically connected to the signal pin 13 on the first surface of the substrate 10, and the other end extends to the outside of the semiconductor device package structure, so as to signal-connect the semiconductor device 20 with other functional modules of the electronic equipment, thereby ensuring the normal operation of the electronic equipment. In specific setting, the pins 80 may also be made of metal materials with good conductivity, such as copper and aluminum, and are not described herein again.
Referring to fig. 6, in the embodiment of the present application, a layer structure 90 for adjusting manufacturing tolerance may be further disposed between the heat dissipation block 40 and the second heat dissipation plate 60, for example, in some application scenarios, an installation space for disposing the semiconductor device package structure in the electronic apparatus is predetermined, and the overall thickness of the semiconductor device package structure is smaller than the height of the installation space due to manufacturing tolerance of relevant components of the semiconductor device package structure or assembly tolerance of the entire package structure, and the like, and then the height difference may be compensated by the layer structure 90, so as to ensure structural stability of the entire electronic apparatus. And when specifically setting up, this layer structure 90 can adopt the heat conduction interface material to prepare, so not only can reach the effect of making up for the manufacturing tolerance in the aforesaid, can also fill up the microgap that produces because the surface is unsmooth when radiating block 40 contacts with second heating panel 60, thus reduce the heat transfer thermal resistance between the two, improve the radiating effect of semiconductor device packaging structure.
In addition, when the heat dissipation block 40 and the second heat dissipation plate 60 are made of metal, an insulating layer is required to be disposed between the two to avoid electrical connection therebetween, and the insulating layer may also be made of a thermal interface material, and at this time, the layer structure 90 may be used to adjust the manufacturing tolerance and also serve as an insulating layer.
To sum up, the semiconductor device packaging structure provided by the application enables the generated heat of the working semiconductor device to be simultaneously dissipated by the substrate below and the two paths of the heat dissipating block above through the heat dissipating block arranged on the connecting bridge, so that double-sided heat dissipation of the semiconductor device is realized, and the manufacturing process of the semiconductor device packaging structure is simple.
The embodiment of the application also provides a manufacturing method of the semiconductor device packaging structure, which comprises the following steps:
forming signal pins on a first surface of a substrate;
preparing an electrode on one surface of the semiconductor device, arranging the semiconductor device on the first surface of the substrate, and enabling the surface of the semiconductor device provided with the electrode to be away from the substrate;
electrically connecting the electrode with the signal pin through a connecting bridge, wherein the connecting bridge comprises a first connecting part, a second connecting part and a supporting part, the first connecting part is arranged on the semiconductor device and is electrically connected with the electrode, the second connecting part is arranged on the signal pin and is electrically connected with the signal pin, and the supporting part is erected and connected between the first connecting part and the second connecting part;
the radiating block is arranged on one side of the supporting part, which is far away from the substrate.
The semiconductor device packaging structure manufactured by the method has the advantages that the radiating block is arranged on the connecting bridge, so that heat generated by the semiconductor device during working can be radiated by the substrate below and the radiating block above at the same time, double-sided radiation of the semiconductor device is realized, and the manufacturing process is simple.
The following describes in detail a method for manufacturing a semiconductor device package structure according to an embodiment of the present application, taking the structure shown in fig. 1 to 3 as an example:
the method comprises the following steps: forming a signal pin 13 on the first surface 11 of the substrate 10, wherein the substrate 10 may specifically be a DBC substrate, and includes a lower layer 14 copper layer, an intermediate layer 15, and an upper layer 16 copper layer, which are stacked, the signal pin 13 is formed on the upper layer 16 copper layer of the DBC, and in addition, the upper layer 16 copper layer further includes a device mounting region 17 disposed at an interval from the signal pin 13;
step two: a first heat dissipation plate 50 is provided on a second surface 12 of the substrate 10 opposite to the first surface 11;
step three: preparing an electrode 21 on one side of a semiconductor device 20, and then arranging the semiconductor device 20 in a device mounting area 17 of an upper layer 16 copper layer, and making the side, provided with the electrode 21, of the semiconductor device 20 away from the substrate 10, wherein the semiconductor device 20 can be an IGBT, an MOSFET or a silicon carbide diode and the like in the prior art;
step four: electrically connecting the electrode with the signal pin 13 through a connection bridge 30, wherein the connection bridge 30 includes a first connection portion 31, a second connection portion 32 and a support portion 33, the first connection portion 31 is disposed on the semiconductor device 20, the first connection portion 31 is electrically connected with the electrode 21, the second connection portion 32 is disposed on the signal pin 13 and is electrically connected with the signal pin 13, and the support portion 33 is erected between the first connection portion 31 and the second connection portion 32 to connect the two, so as to conduct the electrode 21 with the signal pin 13;
step five: arranging the heat dissipation block 40 on the side of the supporting part 33 away from the substrate 10;
step six: an encapsulation adhesive layer 70 is arranged on the first heat dissipation plate 50 to encapsulate the substrate 10, the semiconductor device 20, the connecting bridge 30 and the heat dissipation block 40 on the first heat dissipation plate 50, so that the connection strength of each component is improved, and the semiconductor device 20 is effectively protected;
step seven: grinding one side of the plastic packaging adhesive layer 70, which is far away from the first heat dissipation plate 50, so that the heat dissipation block 40 is exposed at one side of the plastic packaging adhesive layer 70, which is far away from the first heat dissipation plate 50;
step eight: the second heat dissipation plate 60 is disposed on a side of the encapsulation adhesive layer 70 away from the first heat dissipation plate 50.
It should be understood that the above specific steps are described by taking the example of encapsulating each component first and then disposing the second heat dissipation plate, and in other embodiments of the present application, it is of course possible to encapsulate by fixing the second heat dissipation plate first and then filling glue between the first heat dissipation plate and the second heat dissipation plate, which is not described in detail herein.
The application also provides an electronic device, which can be a device such as a high-power supply applied in a plurality of fields such as an electric power system, a data center, an electric vehicle or new energy, and the like, and comprises the semiconductor device packaging structure in any embodiment. The electronic equipment has good heat dissipation capability and simple manufacturing process.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (13)

1. The utility model provides a semiconductor device packaging structure which characterized in that, includes base plate, semiconductor device, connecting bridge and radiating block, wherein:
a signal pin is arranged on the first surface of the substrate;
the semiconductor device is arranged on the first surface of the substrate, and an electrode is arranged on one surface of the semiconductor device, which is far away from the substrate;
the connecting bridge comprises a first connecting part, a second connecting part and a supporting part, wherein the first connecting part is arranged on the semiconductor device and is electrically connected with the electrode, the second connecting part is arranged on the signal pin and is electrically connected with the signal pin, and the supporting part is bridged between the first connecting part and the second connecting part;
the radiating block is arranged on one side of the supporting part, which is deviated from the substrate.
2. The semiconductor device package structure according to claim 1, wherein one side of the supporting portion is connected to an end of the first connection portion facing away from the semiconductor device, and the other side is connected to an end of the second connection portion facing away from the signal pin.
3. The semiconductor device package structure of claim 2, wherein an end of the first connection portion facing away from the semiconductor device is disposed coplanar with an end of the second connection portion facing away from the signal pin.
4. The semiconductor device package structure of claim 1, wherein the support portion has a recess formed therein, and an end of the heat slug facing the support portion is disposed in the recess.
5. The semiconductor device package structure of claim 1, wherein the connecting bridge is an integrally bent structure.
6. The semiconductor device package structure of claim 1, wherein the heat slug is a ceramic material or a metal material.
7. The semiconductor device package structure according to any one of claims 1 to 6, further comprising a first heat dissipation plate and a second heat dissipation plate, wherein the first heat dissipation plate is disposed on a second surface of the substrate opposite to the first surface, and the second heat dissipation plate is disposed on a side of the heat dissipation block facing away from the connection bridge.
8. The semiconductor device package structure of claim 7, further comprising an encapsulation adhesive layer disposed between the first heat dissipation plate and the second heat dissipation plate for wrapping the substrate, the semiconductor device, the connection bridge, and the heat dissipation block.
9. The semiconductor device package according to claim 8, wherein when the heat slug is made of a metal, an insulating layer is disposed between the heat slug and the second heat sink.
10. A method for manufacturing a semiconductor device package structure is characterized by comprising the following steps:
forming signal pins on a first surface of a substrate;
preparing an electrode on one surface of a semiconductor device, arranging the semiconductor device on the first surface of the substrate, and enabling the surface of the semiconductor device provided with the electrode to be away from the substrate;
electrically connecting the electrode with the signal pin through a connection bridge, wherein the connection bridge comprises a first connection part, a second connection part and a support part, the first connection part is arranged on the semiconductor device and is electrically connected with the electrode, the second connection part is arranged on the signal pin and is electrically connected with the signal pin, and the support part is erected and connected between the first connection part and the second connection part;
and arranging the radiating block on one side of the supporting part, which is far away from the substrate.
11. The method of manufacturing of claim 10, further comprising:
a first heat dissipation plate is arranged on a second surface, opposite to the first surface, of the substrate;
arranging a packaging adhesive layer on the first heat dissipation plate, wherein the packaging adhesive layer is used for wrapping the substrate, the semiconductor device, the connecting bridge and the heat dissipation block;
and a second heat dissipation plate is arranged on one side of the packaging adhesive layer, which deviates from the first heat dissipation plate.
12. The method of claim 11, wherein prior to the step of disposing a second heat spreader plate on a side of the encapsulant layer facing away from the first heat spreader plate, the method further comprises:
grinding one side of the packaging adhesive layer, which deviates from the first heating panel, so that the heat dissipation block is exposed at one side of the packaging adhesive layer, which deviates from the first heating panel.
13. An electronic device comprising the semiconductor device package structure according to any one of claims 1 to 9.
CN201910819051.XA 2019-08-30 2019-08-30 Semiconductor device packaging structure, manufacturing method thereof and electronic equipment Active CN110676232B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910819051.XA CN110676232B (en) 2019-08-30 2019-08-30 Semiconductor device packaging structure, manufacturing method thereof and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910819051.XA CN110676232B (en) 2019-08-30 2019-08-30 Semiconductor device packaging structure, manufacturing method thereof and electronic equipment

Publications (2)

Publication Number Publication Date
CN110676232A true CN110676232A (en) 2020-01-10
CN110676232B CN110676232B (en) 2022-05-24

Family

ID=69075871

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910819051.XA Active CN110676232B (en) 2019-08-30 2019-08-30 Semiconductor device packaging structure, manufacturing method thereof and electronic equipment

Country Status (1)

Country Link
CN (1) CN110676232B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116153883A (en) * 2023-04-10 2023-05-23 广东仁懋电子有限公司 IGBT packaging method and IGBT packaging structure
DE102023201424A1 (en) 2023-02-20 2024-08-22 Zf Friedrichshafen Ag Cooling arrangement of a power semiconductor module of an inverter

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1219767A (en) * 1997-12-08 1999-06-16 东芝株式会社 Package for semiconductor power device and method for assembling the same
CN1524295A (en) * 2002-08-12 2004-08-25 Method of creating a high performance organic semiconductor device
CN101770999A (en) * 2010-01-29 2010-07-07 江苏长电科技股份有限公司 External connection heat radiation cap encapsulation structure of positive installation lock hole heat radiation block projected post of base island embedded chip
US20120168919A1 (en) * 2011-01-04 2012-07-05 Eom Joo-Yang Semiconductor package and method of fabricating the same
CN102646667A (en) * 2011-02-18 2012-08-22 Abb研究有限公司 Power semiconductor module and method of manufacturing a power semiconductor module
US20130020694A1 (en) * 2011-07-19 2013-01-24 Zhenxian Liang Power module packaging with double sided planar interconnection and heat exchangers
CN205452265U (en) * 2015-09-02 2016-08-10 意法半导体股份有限公司 Electronic Power Module
CN107393882A (en) * 2017-06-22 2017-11-24 中国工程物理研究院电子工程研究所 Silicon carbide device encapsulating structure and manufacture method based on three layers of DBC substrates
CN107636811A (en) * 2015-04-14 2018-01-26 Jmj韩国有限公司 The ultrasonic bonding engagement device of semiconductor substrate
CN207690782U (en) * 2018-01-09 2018-08-03 芜湖美智空调设备有限公司 Power module and air conditioner

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1219767A (en) * 1997-12-08 1999-06-16 东芝株式会社 Package for semiconductor power device and method for assembling the same
CN1524295A (en) * 2002-08-12 2004-08-25 Method of creating a high performance organic semiconductor device
CN101770999A (en) * 2010-01-29 2010-07-07 江苏长电科技股份有限公司 External connection heat radiation cap encapsulation structure of positive installation lock hole heat radiation block projected post of base island embedded chip
US20120168919A1 (en) * 2011-01-04 2012-07-05 Eom Joo-Yang Semiconductor package and method of fabricating the same
CN102646667A (en) * 2011-02-18 2012-08-22 Abb研究有限公司 Power semiconductor module and method of manufacturing a power semiconductor module
US20130020694A1 (en) * 2011-07-19 2013-01-24 Zhenxian Liang Power module packaging with double sided planar interconnection and heat exchangers
CN107636811A (en) * 2015-04-14 2018-01-26 Jmj韩国有限公司 The ultrasonic bonding engagement device of semiconductor substrate
CN205452265U (en) * 2015-09-02 2016-08-10 意法半导体股份有限公司 Electronic Power Module
CN107393882A (en) * 2017-06-22 2017-11-24 中国工程物理研究院电子工程研究所 Silicon carbide device encapsulating structure and manufacture method based on three layers of DBC substrates
CN207690782U (en) * 2018-01-09 2018-08-03 芜湖美智空调设备有限公司 Power module and air conditioner

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JUERGEN SCHULZ-HARDER等: "陶瓷-铜键合基板(DBC)在功率模块的最近发展 ", 《集成电路应用》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023201424A1 (en) 2023-02-20 2024-08-22 Zf Friedrichshafen Ag Cooling arrangement of a power semiconductor module of an inverter
CN116153883A (en) * 2023-04-10 2023-05-23 广东仁懋电子有限公司 IGBT packaging method and IGBT packaging structure

Also Published As

Publication number Publication date
CN110676232B (en) 2022-05-24

Similar Documents

Publication Publication Date Title
US11823996B2 (en) Power semiconductor module for improved heat dissipation and power density, and method for manufacturing the same
US10297523B2 (en) Power module and method for manufacturing the same
KR101388737B1 (en) Semiconductor package, semiconductor module, and mounting structure thereof
US11387159B2 (en) Chip package
US10361174B2 (en) Electronic device
TW201631722A (en) Encapsulation module of power-converting circuit and manufacturing method thereof
KR102163662B1 (en) Dual side cooling power module and manufacturing method of the same
KR102172689B1 (en) Semiconductor package and method of fabricating the same
CN111261598A (en) Packaging structure and power module applicable to same
JP2004006603A (en) Semiconductor power device
US11545409B2 (en) Semiconductor module having block electrode bonded to collector electrode and manufacturing method thereof
CN105632947A (en) Semiconductor device packaging structure and manufacturing method thereof
CN110676232B (en) Semiconductor device packaging structure, manufacturing method thereof and electronic equipment
WO2005119896A1 (en) Inverter device
CN210349834U (en) Double-side radiating power device module
JP2023541621A (en) Power module and its manufacturing method, converter, and electronic equipment
CN207637783U (en) A kind of high power semiconductor base plate for packaging and semiconductor package
TWI660471B (en) Chip package
JP2017054855A (en) Semiconductor device, and semiconductor package
CN210379025U (en) Power device packaging structure
KR101897304B1 (en) Power module
CN114256172A (en) High-reliability packaging structure and packaging process of power MOSFET
JP2003133514A (en) Power module
CN210349819U (en) Power device module
CN115206905B (en) Semiconductor device and semiconductor module using the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant