CN103779305A - Metal connecting piece and power semiconductor module - Google Patents
Metal connecting piece and power semiconductor module Download PDFInfo
- Publication number
- CN103779305A CN103779305A CN201410033939.8A CN201410033939A CN103779305A CN 103779305 A CN103779305 A CN 103779305A CN 201410033939 A CN201410033939 A CN 201410033939A CN 103779305 A CN103779305 A CN 103779305A
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- CN
- China
- Prior art keywords
- connecting piece
- sclerosis
- metal connecting
- copper layer
- welding
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Disclosed are a metal connecting piece and a power semiconductor module. The metal connecting piece is mainly composed of a hardened end and a welding end, wherein the hardened end is high in mechanical strength due to the fact that the crystal lattice of metal is distorted through cold rolling, rolling and punching, the welding end is not processed and therefore the original mechanical strength is maintained, at least one hardening transition section with a certain gradient is arranged between the hardened end and the welding end, and at least one buffering section provided with a large arc-shaped bent structure is arranged between the hardening transition section and the welding end. The metal connecting piece is arranged in an insulating shell in an injection molding mode, and the gap between the insulating shell and a radiating substrate is filled with sealants. A semiconductor chip is welded to a DBC upper copper layer through welding flux, a ceramic insulating layer is arranged between the DBC upper copper layer and a DBC lower copper layer, and the lower copper layer is welded to the radiating substrate through welding flux. The semiconductor chip leads an electrode to the DBC upper copper layer through a metal wire, the welding end of the metal connecting piece is press-connected to the DBC upper copper layer through a high-power ultrasonic wave, and the hardened end of the metal connecting piece is inserted into a welding hole of an external electric end and is connected with the external electric end through welding flux.
Description
Technical field
What the present invention relates to is a kind of metal connecting piece and application thereof for power semiconductor modular encapsulation, belongs to power electronics technical field.
Background technology
Ultrasonic bonding requires the mechanical strength of material in certain scope, and external circuit requires that semiconductor module is electric has certain mechanical strength, makes it in installation process, be not easy distortion, so need to find a kind of metal connecting piece with different hardness.
Summary of the invention
The object of the invention is to overcome the deficiency that prior art exists, and provide a kind of simple in structure, easy to install and use, can effectively improve metal connecting piece and the power semiconductor modular of power semiconductor modular packaging effect.
The object of the invention is to complete by following technical solution,
A kind of metal connecting piece, thereby the sclerosis that it mainly makes the lattice generation distortion of metal have higher mechanical strength by one end by methods such as cold rolling, roll extrusion, punching presses is held, the other end is not done assistant and is kept the welding ends of original mechanical strength to form, and has one section of sclerosis changeover portion with certain slope between described sclerosis end and welding ends at least; Between described sclerosis changeover portion and welding ends, have one at least with compared with the breeze way of orthodrome bending structure.
Described have a non-sclerosis section adjacent with sclerosis changeover portion, offers a location hole that steadiness is provided during for connector and insulation crust injection moulding or grafting on it; Described sclerosis termination portion has the convenience of enabling and inserts the chamfering that the external circuit board welds.
Between described sclerosis changeover portion and sclerosis end, have one section can fixed outer circuit board, there is the sclerosis section of pyramidal structure.
Use a power semiconductor modular for metal connecting piece described above, described metal connecting piece is injection-moulded in an insulation crust, and insulation crust and a heat-radiating substrate are filled by fluid sealant; Semiconductor chip is welded on the upper copper layer of DBC by scolder, and the upper copper layer of DBC and lower copper interlayer have ceramic insulating layer, and lower copper layer is welded on heat-radiating substrate by scolder; Semiconductor chip is guided to electrode on the upper copper layer of DBC by metal wire, and the welding ends of metal connecting piece is crimped onto on the upper copper layer of DBC by powerful ultrasonic wave; Metal connecting piece sclerosis is held in the welding hole that inserts external electrical end and is connected by scolder.
The present invention manufactures a kind of metal connecting piece and application thereof using in semiconductor packages field by the characteristic of metal work hardening, the two ends of this connector have different mechanical strengths, one end that mechanical strength is higher is used for the connection of external electrical structure, one end that mechanical strength is lower is used for the connection of internal circuit, in the middle of it, transitional region arranges distortion buffering area and fixed structure, it has simple in structure, easy to install and use, can effectively improve the features such as power semiconductor modular packaging effect.
Accompanying drawing explanation
Fig. 1 is metal connecting piece structural representation of the present invention.
Fig. 2 is the structural representation that application has the power semiconductor modular of metal connecting piece.
Embodiment
Below in conjunction with accompanying drawing, the present invention is done to detailed introduction: shown in Fig. 1, metal connecting piece of the present invention, thereby it mainly makes the lattice generation distortion of metal have the sclerosis end 1 of higher mechanical strength by one end by methods such as cold rolling, roll extrusion, punching presses, the other end is not done assistant and is kept the welding ends 6 of original mechanical strength to form, and it is characterized in that having one section of sclerosis changeover portion 3 with certain slope at least between described sclerosis end 1 and welding ends 6; Between described sclerosis changeover portion 3 and welding ends 6, have one at least with compared with the breeze way of orthodrome bending structure 5.
Described have a non-sclerosis section 4 adjacent with sclerosis changeover portion 3, offers a location hole 41 that steadiness is provided during for connector and insulation crust injection moulding or grafting on it; Described sclerosis is held 1 head to have and is enabled the convenient chamfering that the external circuit board welds of inserting.
Between described sclerosis changeover portion 3 and sclerosis end 1, have one section can fixed outer circuit board, there is the sclerosis section 2 of pyramidal structure.
Shown in Fig. 2, a kind of power semiconductor modular that uses metal connecting piece described above, described metal connecting piece is injection-moulded in an insulation crust 10, and insulation crust 10 and a heat-radiating substrate 12 are filled by fluid sealant 11; Semiconductor chip 15 is welded on the upper copper layer 13 of DBC by scolder 16, between the upper copper layer 13 of DBC and lower copper layer 18, has ceramic insulating layer 17, and lower copper layer 18 is welded on heat-radiating substrate by scolder 19; Semiconductor chip is guided to electrode on the upper copper layer 13 of DBC by metal wire 14, and the welding ends 6 of metal connecting piece is crimped onto on the upper copper layer 13 of DBC by powerful ultrasonic wave; Metal connecting piece sclerosis end 1 inserts in the welding hole 9 of external electrical end 7 and connects by scolder 8.
embodiment:
The present invention distorts the lattice of metal by methods such as cold rolling, roll extrusion, punching presses, utilize the characteristic of the work hardening of metal to produce a kind of metal connecting piece, one end of its processed mistake has higher mechanical strength, and the other end does not process, and keeps original mechanical strength.As shown in Figure 1, sclerosis end 1 has higher mechanical strength, and its head has chamfering, and the external circuit board that can insert that enables to be more prone to welds.Sclerosis end 1 uses scolder welding or mechanical contact to be connected with external circuit, and the metals such as gold, silver, tin, nickel can be plated in its surface.Sclerosis end 2 places have pyramidal structure, installation site that can fixed outer circuit board.Sclerosis changeover portion 3 is sclerosis part and non-sclerosis changeover portion partly, has certain gradient or radian, can make strain transition slowly.Non-sclerosis end has location hole 41, and steadiness is provided during for connector and insulation crust injection moulding or grafting.Buffer structure 5, by with compared with the bending structure of orthodrome, plays the effect that regulates strain and gap in the time that connector is connected with inside modules circuit.Ultrasonic bonding end 6 is for the connection of power semiconductor modular internal circuit.
As shown in Figure 2, metal connecting piece is injection-moulded in insulation crust 10 in the application of this metal connecting piece in power model, and insulation crust 10 is filled by fluid sealant 11 with heat-radiating substrate 12.Semiconductor chip 15 is welded on the upper copper layer 13 of DBC by scolder 16, between the upper copper layer 13 of DBC and lower copper layer 18, has ceramic insulating layer 17, and lower copper layer 18 is welded on heat-radiating substrate by scolder 19.Semiconductor chip is guided to electrode on the upper copper layer 13 of DBC by metal wire 14, and metal connecting piece ultrasonic bonding end 6 is crimped onto on the upper copper layer 13 of DBC by powerful ultrasonic wave.Metal connecting piece sclerosis end 1 inserts in the welding hole 9 of external electrical end 7, connects by scolder 8.
Claims (4)
1. a metal connecting piece, thereby the sclerosis that it mainly makes the lattice generation distortion of metal have higher mechanical strength by one end by methods such as cold rolling, roll extrusion, punching presses is held, the other end does not process and keeps the welding ends of original mechanical strength to form, and it is characterized in that having one section of sclerosis changeover portion (3) with certain slope at least between described sclerosis end (1) and welding ends (6); Between described sclerosis changeover portion (3) and welding ends (6), have one at least with compared with the breeze way of orthodrome bending structure (5).
2. metal connecting piece according to claim 1, it is characterized in that described have a non-sclerosis section (4) adjacent with sclerosis changeover portion (3), on it, offer a location hole (41) that steadiness is provided during for connector and insulation crust injection moulding or grafting; Described sclerosis end (1) head has the convenience of enabling and inserts the chamfering that the external circuit board welds.
3. according to metal connecting piece described in claim 1 or 2, it is characterized in that having between described sclerosis changeover portion (3) and sclerosis end (1) one section can fixed outer circuit board, there is the sclerosis section (2) of pyramidal structure.
4. the power semiconductor modular of use metal connecting piece as described in claim 1 or 2 or 3, it is characterized in that described metal connecting piece is injection-moulded in an insulation crust (10), insulation crust (10) is filled by fluid sealant (11) with a heat-radiating substrate (12); Semiconductor chip (15) is welded on the upper copper layer (13) of DBC by scolder (16), between the upper copper layer of DBC (13) and lower copper layer (18), have ceramic insulating layer (17), lower copper layer (18) is welded on heat-radiating substrate by scolder (19); It is upper that semiconductor chip is guided to the upper copper layer (13) of DBC by metal wire (14) by electrode, and the welding ends (6) of metal connecting piece is crimped onto on the upper copper layer (13) of DBC by powerful ultrasonic wave; In the welding hole (9) of metal connecting piece sclerosis end (1) insertion external electrical end (7) and by scolder (8), connect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033939.8A CN103779305A (en) | 2014-01-24 | 2014-01-24 | Metal connecting piece and power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033939.8A CN103779305A (en) | 2014-01-24 | 2014-01-24 | Metal connecting piece and power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103779305A true CN103779305A (en) | 2014-05-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410033939.8A Pending CN103779305A (en) | 2014-01-24 | 2014-01-24 | Metal connecting piece and power semiconductor module |
Country Status (1)
| Country | Link |
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| CN (1) | CN103779305A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900617A (en) * | 2015-05-04 | 2015-09-09 | 嘉兴斯达半导体股份有限公司 | Internal connection structure of power semiconductor module |
| CN105405820A (en) * | 2015-12-14 | 2016-03-16 | 北京晶川电子技术发展有限责任公司 | Power module and packaging method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201146183Y (en) * | 2007-12-14 | 2008-11-05 | 江苏宏微科技有限公司 | Semiconductor power module |
| CN101552264A (en) * | 2008-02-27 | 2009-10-07 | 英飞凌科技股份有限公司 | Power module |
| CN102097417A (en) * | 2010-11-04 | 2011-06-15 | 嘉兴斯达微电子有限公司 | Integrated power semiconductor power module |
| CN102844934A (en) * | 2010-04-13 | 2012-12-26 | 矢崎总业株式会社 | Crimping terminal and manufacturing method of same |
| CN203774291U (en) * | 2014-01-24 | 2014-08-13 | 嘉兴斯达微电子有限公司 | Metal connecting piece and power semiconductor module |
-
2014
- 2014-01-24 CN CN201410033939.8A patent/CN103779305A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201146183Y (en) * | 2007-12-14 | 2008-11-05 | 江苏宏微科技有限公司 | Semiconductor power module |
| CN101552264A (en) * | 2008-02-27 | 2009-10-07 | 英飞凌科技股份有限公司 | Power module |
| CN102844934A (en) * | 2010-04-13 | 2012-12-26 | 矢崎总业株式会社 | Crimping terminal and manufacturing method of same |
| CN102097417A (en) * | 2010-11-04 | 2011-06-15 | 嘉兴斯达微电子有限公司 | Integrated power semiconductor power module |
| CN203774291U (en) * | 2014-01-24 | 2014-08-13 | 嘉兴斯达微电子有限公司 | Metal connecting piece and power semiconductor module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900617A (en) * | 2015-05-04 | 2015-09-09 | 嘉兴斯达半导体股份有限公司 | Internal connection structure of power semiconductor module |
| CN105405820A (en) * | 2015-12-14 | 2016-03-16 | 北京晶川电子技术发展有限责任公司 | Power module and packaging method therefor |
| CN105405820B (en) * | 2015-12-14 | 2018-06-26 | 北京晶川电子技术发展有限责任公司 | A kind of power module and its packaging method |
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Application publication date: 20140507 |
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