CN103745962B - IGBT module suitable for electric automobile inverter, and packaging method and application method - Google Patents
IGBT module suitable for electric automobile inverter, and packaging method and application method Download PDFInfo
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- CN103745962B CN103745962B CN201310703298.8A CN201310703298A CN103745962B CN 103745962 B CN103745962 B CN 103745962B CN 201310703298 A CN201310703298 A CN 201310703298A CN 103745962 B CN103745962 B CN 103745962B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
The invention discloses an IGBT module suitable for an electric automobile inverter. A collecting electrode of an IGBT chip is welded with a first copper block, of which thickness is greater than length of a short side of the IGBT chip. An emitting electrode of the IGBT chip is led out via a second copper block. A control electrode is led out via a binding wire. The second copper block is connected with a third copper block via a heat-conducting and conductive buffer layer with high heat conductivity. The invention also discloses a packaging method and an application method of the IGBT module. The IGBT module is pressed on a cooling plate via an insulating and heat-conducting gasket. The IGBT chip is mutually vertical to the cooling plate. Heat capacity is increased via increasing thickness of copper on the direct welding part of the IGBT, and a large amount of heat is absorbed in a short period of time by utilizing high heat conductivity and high heat capacity of copper so that transient heat resistance is reduced and peak value current capability is increased. Besides, heat resistance is reduced via heat diffusion of the copper layer, increment of heat-radiating area and double-surface cooling. Furthermore, the double-surface cooling is realized by utilizing one cooling plate so that mechanical structure complexity and cost are reduced.
Description
Technical field
The present invention relates to electric automobile drives inverter technology, a kind of IGBT module and this IGBT module are especially belonged to
Method for packing and using method.
Background technology
In traditional commercial Application, for the peak current capability of IGBT module is without very high requirement, but it is used for
When in automobile, in order to meet the needs of frequently short-term acceleration, then require that IGBT module has very strong peak current capability, lead to
It is often 2s～30s, current capacity now is often 2～3 times of even more highs of its rated capacity (or continuous current ability).
IGBT module structure in traditional industry as shown in figure 1, its production procedure is fairly simple, first by igbt chip 1
It is welded on DBC (Direct bonded copper cover copper ceramic substrate, layers of copper 2+ insulating heat-conductive pad (ceramics) 3+ layers of copper 2)
Top copper layer 2 on, then other electrodes (emitter stage, gate pole and other non-power pins) are drawn by binding line and are
Can, the layers of copper 2 of DBC bottoms carries out heat transfer by thermal grease conduction 4 ' and coldplate 5, due to the layers of copper in DBC it is very thin (general
0.1mm～0.6mm), thermal capacitance very little, therefore the peak current capability of this IGBT module is relatively low.If by this traditional industry
In IGBT module be used in automobile, then suitable IGBT module must be selected according to required peak current capability, due to
Automobile-used IGBT module requires there is very high peak current capability, therefore suitable IGBT module necessarily has larger IGBT cores
Piece, and in IGBT module igbt chip account for the overwhelming majority costs, this result in automobile-used IGBT module it is expensive and
Inverter it is with high costs.Meanwhile, in the most of the time for using, continuous current ability is well below peak for automobile-used IGBT module
Value current capacity, this has resulted in the significant wastage of igbt chip current capacity.The life problems of binding line are additionally, since, this
Plant industrial IGBT module to be difficult to meet automobile-used life requirements.So from for automobile-used angle, it is desirable to have such a IGBT
Module, its rated current is less, but but can at short notice have larger peak current capability.
In order to realize above-mentioned functions, each big components supplying business takes the IGBT that certain measure is improved in traditional industry
Modular structure, mainly has at present two schemes more typical.One kind is thick copper scheme, as shown in Fig. 2 increasing and igbt chip 1
(it is for about 2mm～5mm that thickness increases to the thickness of the top copper layer 2 of welding, and the copper layer thickness in traditional structure is typically only hundreds of micro-
Rice), remaining structure is constant, can so increase the thermal capacitance of IGBT module while reducing its thermal resistance so that the peak value of IGBT module
Current capacity is lifted.In this configuration, the thermal capacitance increase of IGBT module is the characteristic for utilizing copper thermal capacitance value larger, and thermal resistance drops
Low, the ultra-high conducting for mainly using copper is hot, and heat will spread rapidly after copper is passed in the heating of igbt chip 1, so as to relative increasing
Add the area to the heat transfer of coldplate 5, thus reduce thermal resistance.In addition, power output part eliminates binding line, but adopt
Directly welding copper bus are drawn, and extend the life-span of IGBT module.Another kind is two-sided cooling scheme, as shown in figure 3, by IGBT cores
The two sides of piece 1 is all welded on DBC (layers of copper 2+ insulating barrier 3+ layers of copper 2), by two-sided cooling, thermal resistance is reduced, so as to improve
The current capacity of IGBT module, the shortcoming of this structure is that water-cooled mechanical system is complex, increased cost, reduces reliability
Property.
The content of the invention
The technical problem to be solved be to provide a kind of IGBT module suitable for electric automobile inverter and its
Method for packing and using method, can reduce thermal resistance, increase thermal capacitance, peak current capability be improved, under identical current needs
The usable floor area of igbt chip can be reduced, the cost of IGBT module and inverter is reduced.
In order to solve above-mentioned technical problem, the present invention provides a kind of IGBT module suitable for electric automobile inverter, institute
It is the half-bridge IGBT module for including half-bridge IGBT and lower half-bridge IGBT to state IGBT module, the upper half-bridge IGBT and lower half-bridge
IGBT includes quantity identical igbt chip；
The colelctor electrode of all igbt chips of the upper half-bridge IGBT is welded with first copper billet, first copper billet
Thickness exceed the bond length of igbt chip, the emitter stage of all igbt chips is drawn by second copper billet, other
Control pole is drawn by binding line；
The colelctor electrode of all igbt chips of the lower half-bridge IGBT is welded with another first copper billet, first bronze medal
The thickness of block exceedes the bond length of igbt chip, and the emitter stage of all igbt chips is drawn by another second copper billet,
Other control poles are drawn by binding line；
The emitter stage of upper half-bridge IGBT is connected with the colelctor electrode of lower half-bridge IGBT, the emitter stage of lower half-bridge IGBT and one
Three copper billets connect.
The present invention also provides the method for packing of the half-bridge IGBT module, including：
Step 1, the current collection pole-face of all igbt chips of upper half-bridge is welded on the first copper billet, the thickness of first copper billet
Bond length of the degree more than igbt chip；
Step 2, the transmitting pole-face of all igbt chips of upper half-bridge is welded on the second copper billet, by second copper billet
Draw emitter stage；
Step 3, is drawn the control pole of igbt chip by binding line, completes the welding of half-bridge IGBT；
Step 4, the current collection pole-face of all igbt chips of lower half-bridge is welded on another first copper billet, first copper billet
Thickness exceed igbt chip bond length；
Step 5, the transmitting pole-face of all igbt chips of lower half-bridge is welded on another second copper billet, by described second
Copper billet draws emitter stage；
Step 6, is drawn the control pole of igbt chip by binding line, completes the welding of lower half-bridge IGBT；
Step 7, the emitter stage of upper half-bridge IGBT is connected with the colelctor electrode of lower half-bridge IGBT, the emitter stage of lower half-bridge IGBT
It is connected with one the 3rd copper billet；
Step 8, plastic packaging.
The present invention also provides the using method of the half-bridge IGBT module, wherein upper half-bridge IGBT and lower half-bridge IGBT passes through
On the cooling plate, the upper half-bridge igbt chip and lower half-bridge igbt chip are mutually perpendicular to insulating heat-conductive pad pressure with coldplate.
Wherein, the second copper billet for welding together with upper half-bridge IGBT emitter stages and it is welded on lower half-bridge IGBT colelctor electrodes
The first copper billet together is connected by heat-conducting buffer layer, and the second copper billet welded together with lower half-bridge IGBT emitter stages is by leading
The copper billet of Heat buffered layer the 3rd connects, and the heat-conducting buffer layer adopts the flexible material of heat conduction.
Or, the second copper billet for welding together with upper half-bridge IGBT emitter stages and it is welded on lower half-bridge IGBT colelctor electrodes
The first copper billet together is connected by thermal conductivity cushion, is led to the second copper billet that lower half-bridge IGBT emitter stages weld together
The connection of the copper billet of thermal conductivity cushion the 3rd is crossed, the thermal conductivity cushion adopts electrically and thermally conductive flexible material.
Preferably, the thickness of first copper billet is 8mm～20mm, and the thickness of second copper billet is 2mm～5mm, institute
The thickness for stating the 3rd copper billet is about the thickness difference of the first copper billet and the second copper billet.
The present invention increases thermal capacitance on the basis of thick copper technology and two-sided cooling technology, further and reduces thermal resistance, its master
To realize thermal capacitance by the copper thickness for increasing the direct welds of IGBT increases, while being realized using the high thermal conductivity and high heat capacity of copper
Amount of heat is absorbed in short time, so as to reduce transient thermal resistance, increases peak current capability.Additionally, the thermal diffusion for passing through layers of copper,
The reduction of thermal resistance is realized in increasing heat radiation area and two-sided cooling, and the two-sided cooling of IGBT module of the present invention only need to one piece it is cold
But plate, reduces the complexity of frame for movement, reduces cost.
Description of the drawings
Fig. 1 is the structural representation and use state figure of the IGBT module in traditional industry；
Fig. 2 is a kind of structural representation and use state figure of existing automobile-used IGBT module；
Fig. 3 is another kind of structural representation and use state figure of existing automobile-used IGBT module；
Fig. 4 is the structural representation and use state figure of the automobile-used IGBT module of the present invention；
Fig. 5 is the encapsulation schematic diagram of single IGBT module in the present invention；
Fig. 6 is the encapsulation schematic diagram of half-bridge IGBT module in the present invention；
Fig. 7 is the circuit theory diagrams of Fig. 6；
Fig. 8 is the thermal resistance curve comparison diagram of four kinds of IGBT modules of Fig. 1 to Fig. 4.
Wherein description of reference numerals is as follows：
1 is igbt chip；2 is copper billet；3 is insulating heat-conductive pad；4 ' are thermal grease conduction；4 is thermal conductivity cushion；5 are
Coldplate；21 is the first copper billet；22 is the second copper billet；23 is the 3rd copper billet；A is the thermal resistance curve of traditional industry IGBT module；B
For the thermal resistance curve of the IGBT module of thick steel structure；C is the thermal resistance curve of the IGBT module of two-sided cooling structure；D is the present invention
The thermal resistance curve of half-bridge IGBT module；E is Automobile drive peak current time.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is further detailed explanation with specific embodiment.
The present invention provide IGBT module be applied to electric automobile (including pure electric automobile, mixed power electric car or
Other kinds of electric automobile), wherein single IGBT module contains at least one piece igbt chip 1, the colelctor electrode of the igbt chip 1
Weld with first copper billet 21, the thickness of first copper billet 21 exceedes the minor face (current collection of igbt chip of igbt chip 1
Shorter one side in pole-face) length, the emitter stage of the igbt chip 1 all drawn by second copper billet 22, and described second
Copper billet 22 is connected by thermal conductivity cushion 4 with the 3rd copper billet 23, and other control poles are drawn by binding line, such as Fig. 5
It is shown.The thermal conductivity cushion 4 has high thermal conductivity, the characteristic of high conductivity, and with certain mechanical damping ability,
Such as indium pad.Certainly, the thermal conductivity cushion can also replace with the heat-conducting buffer layer for not possessing electric conductivity (as routine is general
Thermal grease conduction), now, emitter stage (or second copper billet 22) is electrically connected with the 3rd copper billet 23.
When above-mentioned single IGBT module is encapsulated, first the current collection pole-face of igbt chip 1 is welded on the first copper billet 21, then will
The transmitting pole-face of igbt chip 1 is welded on the second copper billet 22, emitter stage is drawn by second copper billet 22, then by tying up
Alignment (if other non-power pins, now also in the lump by way of binding line draws the control pole of igbt chip 1)
Draw, then the second copper billet 22 is connected by thermal conductivity cushion 4 with the 3rd copper billet 23, finally carry out plastic packaging.
Wherein, the thickness of the first copper billet 21 is preferably 8mm～20mm, and the thickness of the second copper billet 22 is 2mm～5mm, the
The thickness of three copper billets 23 is about the thickness difference of the first copper billet 21 and the second copper billet 22.
Before the colelctor electrode of welding igbt chip 1, need to carry out certain surface treatment to the first copper billet 21 with anti-corrosion and
It is easy to welding.
Above-mentioned single IGBT module when in use, is passed through insulating heat-conductive pad 3 and is pressed on coldplate 5, and igbt chip 1 is equal
It is mutually perpendicular to coldplate 5.
The present invention also provides a kind of half-bridge IGBT module, as shown in figure 4, it includes half-bridge IGBT and lower half-bridge IGBT,
The upper half-bridge IGBT and lower half-bridge IGBT includes quantity identical igbt chip 1；
The colelctor electrode of all igbt chips 1 of the upper half-bridge IGBT is welded with first copper billet 21, and described first
The thickness of copper billet 21 exceedes the bond length of igbt chip 1, and the emitter stage of all igbt chips 1 passes through second copper billet 22
Draw, other control poles are drawn by binding line；
The colelctor electrode of all igbt chips 1 of the lower half-bridge IGBT is welded with another first copper billet 21, and described
The thickness of one copper billet 21 also above igbt chip 1 bond length, the emitter stage of all igbt chips 1 by another second
Copper billet 22 is drawn, and other control poles are drawn by binding line；
The emitter stage of upper half-bridge IGBT is connected with the colelctor electrode of lower half-bridge IGBT, the emitter stage of lower half-bridge IGBT and the 3rd
Copper billet 23 is welded.
In said structure, the second copper billet 22 for welding together with upper half-bridge IGBT emitter stages and with lower half-bridge IGBT collection
Electrode welding the first copper billet 21 together is connected by thermal conductivity cushion 4, and with lower half-bridge IGBT emitter stages one is welded on
The second copper billet 22 for rising is connected by thermal conductivity cushion 4 with the 3rd copper billet 23.
Wherein, the thickness of first copper billet 21 is 8mm～20mm, and the thickness of the second copper billet 22 is 2mm～5mm, the 3rd
The thickness of copper billet 23 is about the thickness difference of the first copper billet 21 and the second copper billet 22.
Above-mentioned half-bridge IGBT module connects two IGBT modules on the basis of single IGBT module, circuit structure such as Fig. 7
It is shown, during encapsulation, as shown in fig. 6, the IGBT that two are welded is crimped on by electrically and thermally conductive thermal conductivity cushion 4
Together, wherein the emitter stage of upper half-bridge IGBT is connected with the colelctor electrode of lower half-bridge IGBT, the emitter stage and the 3rd of lower half-bridge IGBT
Copper billet 23 is welded, and plastic packaging is finally carried out again to give the certain pretightning force of upper half-bridge IGBT and lower half-bridge IGBT and ensures upper and lower half-bridge
Good heat conductivity and electric conductivity.
In above-mentioned encapsulation process, making half-bridge IGBT and lower half-bridge IGBT series connection be exactly will be with upper half-bridge IGBT emitter stage
The second copper billet 22 for welding together and the first copper billet 21 welded together with lower half-bridge IGBT colelctor electrodes pass through thermal conductivity
Thermal conductivity cushion 4 connect, while by the second copper billet 22 welded together with lower half-bridge IGBT emitter stages by heat conduction
Conductive thermal conductivity cushion 4 is connected with the 3rd copper billet 23.
When in use, upper half-bridge IGBT and lower half-bridge IGBT are pressed in above-mentioned half-bridge IGBT module by insulating heat-conductive pad 3
On coldplate 5, the upper half-bridge igbt chip and lower half-bridge igbt chip are mutually perpendicular to coldplate, as shown in Figure 4.And it is traditional
Industrial IGBT module and automobile-used IGBT module when in use, igbt chip and coldplate are at horizontality, therefore
In order to realize that two-sided cooling is accomplished by two pieces of coldplates, cause cooling system structure complicated, it is relatively costly.
The present invention increases thermal capacitance on the basis of thick copper technology and two-sided cooling technology, further and reduces thermal resistance, its master
To realize thermal capacitance by the copper thickness for increasing the direct welds of IGBT increases, while being realized using the high thermal conductivity and high heat capacity of copper
Amount of heat is absorbed in short time, so as to reduce transient thermal resistance, increases peak current capability.Additionally, the thermal diffusion for passing through layers of copper,
The reduction of thermal resistance is realized in increasing heat radiation area and two-sided cooling, and the two-sided cooling of IGBT module of the present invention only need to one piece it is cold
But plate, reduces the complexity of frame for movement, reduces cost.
Fig. 8 is the thermal resistance curve comparison diagram of four kinds of IGBT modules of Fig. 1 to Fig. 4, wherein, the IGBT module of thickness copper is not used
(the two-sided cooling IGBT module shown in traditional IGBT module and Fig. 3 shown in Fig. 1) thermal capacitance very little, in Automobile drive peak point current
In time E, thermal resistance curve A and C of the two already reach it is stable, for Automobile drive, peak current capability and follow current
Ability is the same.And only using the IGBT module (structure shown in Fig. 2) of thick copper although steady state heat resistance is than larger, thermal capacitance is not
It is very big, so the thermal resistance in Automobile drive peak current time is more smaller than stationary value, with certain peak point current energy
Power.By contrast, thermal capacitance of the invention further increases, and the thermal resistance in Automobile drive peak current time is further reduced,
Peak current capability is greatly improved.
The present invention is described in detail above by specific embodiment, the embodiment is only the preferable of the present invention
Embodiment, it not limits the invention.Without departing from the principles of the present invention, those of ordinary skill in the art exist
Do not make the aspects such as thickness, structure on the premise of creative work to each copper billet and pass through any modification, equivalent substitution and improvements
Etc. all other embodiment that mode is obtained, it is regarded as in the technology category protected of the invention.
Claims (8)
1. a kind of IGBT module suitable for electric automobile inverter, it is characterised in that
The IGBT module is the half-bridge IGBT module for including half-bridge IGBT and lower half-bridge IGBT, and the upper half-bridge IGBT is with
Half-bridge IGBT includes quantity identical igbt chip；
The colelctor electrode of all igbt chips of the upper half-bridge IGBT is welded with first copper billet, the thickness of first copper billet
, more than the bond length of igbt chip, the emitter stage of all igbt chips is by the second copper billet extraction, other controls for degree
Drawn by binding line pole；
The colelctor electrode of all igbt chips of the lower half-bridge IGBT is welded with another first copper billet, first copper billet
Thickness exceedes the bond length of igbt chip, and the emitter stage of all igbt chips is drawn by another second copper billet, other
Control pole is drawn by binding line；
The emitter stage of upper half-bridge IGBT is connected with the colelctor electrode of lower half-bridge IGBT, the emitter stage of lower half-bridge IGBT and the 3rd bronze medal
Block connects.
2. the IGBT module suitable for electric automobile inverter according to claim 1, it is characterised in that with upper half-bridge
The second copper billet that IGBT emitter stages weld together and the first copper billet for welding together with lower half-bridge IGBT colelctor electrodes are by leading
Heat buffered layer connects, and the second copper billet welded together with lower half-bridge IGBT emitter stages is connected by the copper billet of heat-conducting buffer layer the 3rd
Connect, the heat-conducting buffer layer adopts the flexible material of heat conduction.
3. the IGBT module suitable for electric automobile inverter according to claim 1, it is characterised in that with upper half-bridge
The second copper billet that IGBT emitter stages weld together and the first copper billet for welding together with lower half-bridge IGBT colelctor electrodes are by leading
Thermal conducting cushion connects, and with the second copper billet that lower half-bridge IGBT emitter stages weld together thermal conductivity cushion the 3rd is passed through
Copper billet connects, and the thermal conductivity cushion adopts electrically and thermally conductive flexible material.
4. the IGBT module suitable for electric automobile inverter according to any one of claim 1 to 3, its feature exists
In the thickness of first copper billet is 8mm～20mm, and the thickness of second copper billet is 2mm～5mm, the 3rd copper billet
Thickness is the thickness difference of the first copper billet and the second copper billet.
5. a kind of method for packing of IGBT module as claimed in claim 1, it is characterised in that include：
Step 1, the current collection pole-face of all igbt chips of upper half-bridge is welded on the first copper billet, and the thickness of first copper billet surpasses
Cross the bond length of igbt chip；
Step 2, the transmitting pole-face of all igbt chips of upper half-bridge is welded on the second copper billet, is drawn by second copper billet
Emitter stage；
Step 3, is drawn the control pole of igbt chip by binding line, completes the welding of half-bridge IGBT；
Step 4, the current collection pole-face of all igbt chips of lower half-bridge is welded on another first copper billet, the thickness of first copper billet
Bond length of the degree more than igbt chip；
Step 5, the transmitting pole-face of all igbt chips of lower half-bridge is welded on another second copper billet, by second copper billet
Draw emitter stage；
Step 6, is drawn the control pole of igbt chip by binding line, completes the welding of lower half-bridge IGBT；
Step 7, the emitter stage of upper half-bridge IGBT is connected with the colelctor electrode of lower half-bridge IGBT, the emitter stage and of lower half-bridge IGBT
3rd copper billet connects；
Step 8, plastic packaging.
6. the method for packing of IGBT module according to claim 5, it is characterised in that with the welding of upper half-bridge IGBT emitter stages
The second copper billet together and the first copper billet welded together with lower half-bridge IGBT colelctor electrodes are connected by heat-conducting buffer layer, with
The second copper billet that lower half-bridge IGBT emitter stages weld together is connected by the copper billet of heat-conducting buffer layer the 3rd.
7. the method for packing of IGBT module according to claim 5, it is characterised in that with the welding of upper half-bridge IGBT emitter stages
The second copper billet together and the first copper billet welded together with lower half-bridge IGBT colelctor electrodes are connected by thermal conductivity cushion
Connect, the second copper billet welded together with lower half-bridge IGBT emitter stages is connected by the copper billet of thermal conductivity cushion the 3rd.
8. a kind of using method of IGBT module as claimed in claim 1, it is characterised in that upper half-bridge IGBT and lower half-bridge
IGBT by insulating heat-conductive pad pressure on the cooling plate, the upper half-bridge igbt chip and lower half-bridge igbt chip and coldplate phase
It is mutually vertical.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310703298.8A CN103745962B (en) | 2013-12-19 | 2013-12-19 | IGBT module suitable for electric automobile inverter, and packaging method and application method |
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| CN201310703298.8A CN103745962B (en) | 2013-12-19 | 2013-12-19 | IGBT module suitable for electric automobile inverter, and packaging method and application method |
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| CN103745962B true CN103745962B (en) | 2017-05-10 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956380A (en) * | 2014-05-19 | 2014-07-30 | 淄博美林电子有限公司 | IGBT chip and manufacturing method thereof |
| CN105590930B (en) * | 2016-02-02 | 2018-05-08 | 中国第一汽车股份有限公司 | A kind of used in new energy vehicles IGBT power module |
| CN106714514A (en) * | 2016-12-15 | 2017-05-24 | 宁波央腾汽车电子有限公司 | Inverter cooling system applied to electric vehicle |
| CN211908640U (en) * | 2020-05-19 | 2020-11-10 | 阳光电源股份有限公司 | Power conversion device |
| CN111863745B (en) * | 2020-08-17 | 2022-04-08 | 天津大学 | Heat radiation structure for medium integrated suspension line power amplifier |
| CN112910285B (en) * | 2021-01-05 | 2022-06-14 | 深圳市富鑫产业科技有限公司 | Inverter power system and manufacturing method thereof |
| CN113612101B (en) * | 2021-07-13 | 2024-02-13 | 杭州沃镭智能科技股份有限公司 | DBC board automatic assembly equipment |
| CN115274584A (en) * | 2022-06-24 | 2022-11-01 | 华为数字能源技术有限公司 | Power module and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1961474A (en) * | 2004-06-03 | 2007-05-09 | 株式会社东芝 | Inverter device |
| CN101438403A (en) * | 2006-05-10 | 2009-05-20 | 株式会社东芝 | Semiconductor device and method for manufacturing same |
| CN203760452U (en) * | 2013-12-19 | 2014-08-06 | 联合汽车电子有限公司 | IGBT module suitable for electric vehicle inverter |
-
2013
- 2013-12-19 CN CN201310703298.8A patent/CN103745962B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1961474A (en) * | 2004-06-03 | 2007-05-09 | 株式会社东芝 | Inverter device |
| CN101438403A (en) * | 2006-05-10 | 2009-05-20 | 株式会社东芝 | Semiconductor device and method for manufacturing same |
| CN203760452U (en) * | 2013-12-19 | 2014-08-06 | 联合汽车电子有限公司 | IGBT module suitable for electric vehicle inverter |
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