CN111863745B - Heat radiation structure for medium integrated suspension line power amplifier - Google Patents
Heat radiation structure for medium integrated suspension line power amplifier Download PDFInfo
- Publication number
- CN111863745B CN111863745B CN202010823611.1A CN202010823611A CN111863745B CN 111863745 B CN111863745 B CN 111863745B CN 202010823611 A CN202010823611 A CN 202010823611A CN 111863745 B CN111863745 B CN 111863745B
- Authority
- CN
- China
- Prior art keywords
- heat
- plate
- transistor
- power amplifier
- conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
Abstract
The invention discloses a heat dissipation structure for a medium integrated suspension line power amplifier, which comprises a first heat conduction plate (1), a second layer of medium plate (2), a layer of medium plate (3) where a power amplifier mounting circuit is arranged, a fourth layer of medium plate (4) and a second heat conduction plate (5) which are arranged from top to bottom in sequence; a transistor (8) is arranged on the opening of the dielectric plate on which the power amplifier mounting circuit is arranged; the fourth layer of dielectric plate is arranged right below the transistor, and a heat-conducting metal block is arranged in the opening; the bottom surface of the heat-conducting metal block is connected with the top surface of the second heat-conducting plate in a clinging manner; the top surface of the heat-conducting metal block is connected with the bottom surface of the transistor in a clinging manner; the second layer of dielectric plate is arranged right above the transistor, and a heat conducting pad is arranged in the opening; the top surface of the heat conducting pad is connected with the bottom surface of the first heat conducting plate in a clinging manner; the bottom surface of the heat conducting pad is closely connected with the top surface of the transistor. The invention can effectively dissipate the heat of the transistor in the power amplifying circuit and ensure the heat dissipation effect of the transistor.
Description
Technical Field
The invention relates to the technical field of radio frequency microwave circuits, in particular to a heat dissipation structure for a dielectric integrated suspension line power amplifier.
Background
At present, a power amplifier (power amplifying circuit) is used as a key device in a radio frequency microwave circuit, and the problem of heat dissipation is more and more emphasized in the industry.
The transistor is used as a core element in a power amplification circuit, and is subjected to both a large current and a high voltage, the dissipated power of the transistor depends on the PN junction temperature inside the transistor, and when the junction temperature exceeds an allowable value, the drain or collector current is increased sharply, so that the transistor is burnt. The greater the power consumption of the tube, the higher the junction temperature.
Therefore, by improving the heat dissipation condition of the transistor in the power amplifying circuit, on one hand, the power amplifying circuit can normally operate, and on the other hand, higher maximum dissipated power of a collector or a drain can be obtained under the same junction temperature, so that the output power is improved.
At present, the International conference "IEEE MTT-S International Microwave work house Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2017)" published article "a 0.9GHz Self-packaged power amplifier based on SISL platform" with DOI number 10.1109/IMWS-amp.2017.8247365 proposes a power amplifier based on a dielectric integrated suspension line (SISL) structure, in which core circuits are located on the upper and lower surfaces of a third dielectric plate of the SISL structure, transistors are soldered to the upper surface of the third dielectric plate, and the bottoms of the transistors exchange heat with the external environment through metal through holes filled with solder on the third, fourth and fifth dielectric layers, thereby dissipating heat. The heat dissipation of the SISL power amplifier in the above article has the following disadvantages: the uniform filling and tight connection of the soldering tin of different medium layers can not be ensured, so that a high-efficiency heat path is realized, the contact thermal resistance is reduced, and the heat is effectively dissipated.
Therefore, no technical structure exists at present, the transistor in the medium integrated suspension line power amplification circuit can be effectively cooled, and the cooling effect of the transistor is ensured.
Disclosure of Invention
The invention aims to provide a heat dissipation structure for a dielectric integrated suspension line power amplifier, aiming at the technical defects in the prior art.
Therefore, the invention provides a heat dissipation structure for a medium integrated suspension line power amplifier, which comprises a first heat conduction plate, a second layer of medium plate, a layer of medium plate where a power amplifier installation circuit is located, a fourth layer of medium plate and a second heat conduction plate which are sequentially connected from top to bottom;
a transistor is arranged on the opening of the dielectric plate on which the power amplifier mounting circuit is arranged;
the fourth layer of dielectric plate is arranged right below the transistor, and a heat-conducting metal block is arranged in the opening;
the bottom surface of the heat-conducting metal block is connected with the top surface of the second heat-conducting plate in a clinging manner;
the top surface of the heat-conducting metal block is connected with the bottom surface of the transistor in a clinging manner;
the second layer of dielectric plate is arranged right above the transistor, and a heat conducting pad is arranged in the opening;
the top surface of the heat conducting pad is connected with the bottom surface of the first heat conducting plate in a clinging manner;
the bottom surface of the heat conducting pad is closely connected with the top surface of the transistor.
The power amplifier mounting circuit is arranged on the dielectric plate of the layer right below the bottom surface of the transistor, and a transistor mounting through hole is formed in the power amplifier mounting circuit;
on the transistor mounting through hole, a transistor is mounted.
The fourth layer of dielectric plate is provided with a heat conduction metal block accommodating through hole at the position right below the bottom surface of the transistor, and the heat conduction metal block is placed in the heat conduction metal block accommodating through hole;
the second dielectric plate is provided with a heat conducting pad accommodating through hole right above the transistor, and the heat conducting pad is placed in the heat conducting pad accommodating through hole.
Wherein, the first heat-conducting plate and the second heat-conducting plate are both copper plates or red copper plates.
The upper surface of the first heat conducting plate and the lower surface of the second heat conducting plate are respectively connected with a radiating fin in a clinging manner.
The upper surface of the first heat conducting plate and the lower surface of the second heat conducting plate are respectively riveted with the radiating fins through screws or are adhered with the radiating fins through heat conducting glue.
Wherein, the fan is fixedly arranged outside the radiating fin respectively connected with the first heat conducting plate and the second heat conducting plate.
For the transistor with the pad positioned on the bottom surface, the pad on the bottom surface of the transistor is welded on the heat-conducting metal block;
the first heat-conducting plate, the second layer of medium plate, the third layer of medium plate, the fourth layer of medium plate and the second heat-conducting plate are riveted through screws from top to bottom in sequence.
The bottom surface of the heat-conducting metal block is adhered to the top surface of the second heat-conducting plate through heat-conducting glue or is tightly adhered to the top surface of the second heat-conducting plate through welding, and the heat-conducting pad is adhered to the bottom surface of the first heat-conducting plate through heat-conducting glue;
the bottom surface of the heat conducting pad is bonded with the top surface of the transistor through heat conducting glue.
Compared with the prior art, the heat dissipation structure for the dielectric integrated suspension line power amplifier is scientific in structural design, can effectively dissipate heat of the transistor in the power amplification circuit, guarantees the heat dissipation effect of the transistor, and has great practical significance.
For the invention, the metal plate with high heat conductivity is used for replacing the top layer medium plate and the bottom layer medium plate which are difficult to conduct heat in the original medium integrated suspension line power amplifier structure, and the method specifically comprises the following steps: the poor medium plate of heat conduction of hugging closely the transistor bottom surface is hollowed and is set up the good heat conduction metal block of heat conduction to and hug closely insulating heat conduction pad at the transistor top surface, thereby let the heat can be effectively from the upper and lower surface of transistor, pass to first heat-conducting plate and second heat-conducting plate through heat conduction pad and heat conduction metal block on, then add the fan through the fin and effectively dispel the heat, guarantee to have good radiating effect.
Drawings
Fig. 1 is a schematic perspective view of a heat dissipation structure for a dielectric integrated suspension line power amplifier according to the present invention;
fig. 2a is a schematic diagram of a first exploded perspective view of a heat dissipation structure for a dielectric integrated suspension line power amplifier according to the present invention;
fig. 2b is a schematic diagram of a three-dimensional exploded view of a heat dissipation structure for a dielectric integrated suspension line power amplifier according to the present invention;
fig. 3 is a front view of a heat dissipation structure for a dielectric integrated suspension line power amplifier according to the present invention;
fig. 4 is a left side view of a heat dissipation structure for a dielectric integrated suspension line power amplifier according to the present invention;
fig. 5 is a bottom view of a heat dissipation structure for a dielectric integrated suspension line power amplifier according to the present invention;
fig. 6 is a top view of a heat dissipation structure for a dielectric integrated suspension line power amplifier according to the present invention;
fig. 7 is a schematic perspective view of a heat dissipation structure for a dielectric integrated suspension line power amplifier provided in the present invention, when a transistor (i.e., a power amplifier tube) requiring heat dissipation is mounted;
fig. 8 is a schematic longitudinal cross-sectional view of a heat dissipation structure for a dielectric integrated suspension line power amplifier provided in the present invention when a transistor (i.e., a power amplifier tube) requiring heat dissipation is mounted;
in the figure, 1 is a first heat conducting plate, 2 is a second layer of dielectric plate, 3 is a layer of dielectric plate (namely a third layer of dielectric plate) where the power amplifier mounting circuit is located, 4 is a fourth layer of dielectric plate, and 5 is a second heat conducting plate;
6 is a heat sink, 7 is a fan, 8 is a transistor, and 9 is a heat conducting pad;
10 is a thermally conductive metal block that is soldered to the bottom surface of the transistor.
In the figure, Vgs is a gate dc supply port for providing a gate bias voltage for the power amplifier;
vds is a drain direct current supply voltage port and is used for providing drain bias voltage for the power amplifier;
RF _ In is a radio frequency input port from which a radio frequency signal enters the power amplifier;
RF _ Out is the radio frequency output port from which the radio frequency signal is output to the power amplifier.
Detailed Description
In order to make the technical means for realizing the invention easier to understand, the following detailed description of the present application is made in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant application and are not limiting of the application. It should be noted that, for convenience of description, only the portions related to the present application are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
It should be noted that in the description of the present application, the terms of direction or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
In addition, it should be noted that, in the description of the present application, unless otherwise explicitly specified and limited, the term "mounted" and the like should be interpreted broadly, and may be, for example, either fixedly mounted or detachably mounted.
The specific meaning of the above terms in the present application can be understood by those skilled in the art as the case may be.
Referring to fig. 1 to 8, the invention provides a heat dissipation structure for a dielectric integrated suspension line power amplifier, which includes a first heat conduction plate 1, a second layer of dielectric plate 2, a layer of dielectric plate 3 (i.e. a circuit board, i.e. a third layer of dielectric plate) where a power amplifier mounting circuit is located, a fourth layer of dielectric plate 4 and a second heat conduction plate 5, which are sequentially connected from top to bottom;
a transistor 8 is arranged on the layer of dielectric plate 3 where the power amplifier mounting circuit is arranged;
the fourth-layer dielectric plate 4 is provided with a heat-conducting metal block 10 at a position right below the transistor 8;
the bottom surface of the heat-conducting metal block 10 is closely connected with the top surface of the second heat-conducting plate 5;
the top surface of the heat conducting metal block 10 is connected with the bottom surface of the transistor 8 in a clinging manner;
wherein, the second layer of dielectric plate 2 is provided with a heat conducting pad 9 at the position right above the transistor 8;
the top surface of the heat conducting pad 9 is closely connected with the bottom surface of the first heat conducting plate 1;
the bottom surface of the thermal pad 9 is in close contact with the top surface of the transistor 8.
In the invention, in the concrete implementation, a transistor mounting through hole is formed in the position of the dielectric plate 3 on the layer where the power amplifier mounting circuit is positioned right below the bottom surface of the transistor 8;
on the transistor mounting through hole, a transistor 8 is mounted.
It should be noted that the size of the transistor mounting via is equal to or slightly smaller than the size of the transistor 8, so that the transistor 8 does not fall off.
In the concrete implementation, the fourth dielectric plate 4 is provided with a heat conducting metal block accommodating through hole at a position right below the bottom surface of the transistor 8, and the heat conducting metal block 10 is placed in the heat conducting metal block accommodating through hole.
In the specific implementation, the second dielectric plate 2 is provided with a heat conducting pad accommodating through hole directly above the transistor 8, and a heat conducting pad 9 is placed in the heat conducting pad accommodating through hole.
In the present invention, in a specific implementation, the first heat conduction plate 1 and the second heat conduction plate 5 are both metal plates having good heat conduction properties, such as copper plates or copper plates.
It should be noted that, for the present invention, the first heat conducting plate 1 is located at the topmost layer of the power amplifier of the medium integrated suspension line, and is used for replacing the topmost layer medium cover plate with slow heat conduction in the original medium integrated suspension line structure; the second heat conducting plate 5 is located at the bottommost layer of the medium integrated suspension line structure and is used for replacing the bottommost layer medium cover plate with slow heat conduction in the original medium integrated suspension line structure.
Thus, with the present invention, the contact area is increased by the first heat-conducting plate 1 and the second heat-conducting plate 5, so that the heat generated by the operation of the power amplifier (i.e., the transistor 8) can be quickly conducted away through the two heat-conducting plates.
In the present invention, in a specific implementation, the upper surface of the first heat conducting plate 1 and the lower surface of the second heat conducting plate 5 are respectively connected with a heat sink 6 in a close contact manner.
In the concrete realization, in order to let the fin hug closely and connect first heat-conducting plate 1 and second heat-conducting plate 5, specifically do: the upper surface of the first heat conducting plate 1 and the lower surface of the second heat conducting plate 5 are respectively riveted with the radiating fins 6 through screws, or the radiating fins 6 are adhered through heat conducting glue.
It should be noted that, with the present invention, by selecting an appropriate number of fins and fin length, the heat dissipation contact area is increased, so that the heat conducted from the first heat conduction plate 1 and the second heat conduction plate 5 is quickly dissipated through the fins 6.
It should be noted that, for the heat dissipation structure of the dielectric integrated suspension line power amplifier, the heat dissipation structure is assembled in sequence by rivets from the first heat conduction plate 1, the second layer dielectric plate 2, the layer dielectric plate (i.e. circuit board, third layer dielectric plate) 3 where the power amplifier mounting circuit is located, the fourth layer dielectric plate 4, and then to the second heat conduction plate 5.
According to the heat dissipation mechanism for the medium integrated suspension line power amplifier, the first heat conduction plate 1, the second layer of medium plate 2, the third layer of medium plate 3, the fourth layer of medium plate 4 and the second heat conduction plate 5 are riveted through screws sequentially from top to bottom, and good electrical connection characteristics are guaranteed.
In the present invention, in a specific implementation, for the transistor 8 with the pad located on the bottom surface, the heat dissipation structure may be: a heat conducting pad 9 is arranged between the top surface of the transistor 8 and the first heat conducting plate 1 in a clinging manner, and a bottom surface bonding pad of the transistor 8 is welded on a heat conducting metal block 10;
in the specific implementation, the width of the heat-conducting metal block 10 is the same as the width of the bottom surface of the transistor 8, the thickness of the heat-conducting metal block is the same as the thickness of a cavity under a medium integrated suspension line (SISL), and the material of the heat-conducting metal block 10 is the same as that of the second heat-conducting plate 5;
at this time, the bottom surface of the heat conducting metal block 10 is adhered or welded to the top surface of the second heat conducting plate 5 by the heat conducting glue, and the top surface of the heat conducting pad 9 is adhered to the bottom surface of the first heat conducting plate 1 by the heat conducting glue.
In the present invention, in a specific implementation, for the transistor 8 with the pad located on the side surface, the heat dissipation structure may be: a heat conducting pad 9 is arranged between the top surface of the transistor 8 and the first heat conducting plate 1 and between the bottom surface of the transistor 8 and the top surface of the second heat conducting plate 5 in a clinging manner; or, a heat conducting pad 9 is closely arranged between the top surface of the transistor 8 and the first heat conducting plate 1, and meanwhile, a heat conducting metal block 10 is riveted or welded between the bottom surface of the transistor 8 and the second heat conducting plate 5.
At this time, the heat conducting pad 9 is bonded to the top surface of the second heat conducting plate 5 and the bottom surface of the first heat conducting plate 1 through heat conducting glue; meanwhile, the bottom surface of the thermal pad 9 is bonded to the top surface of the transistor 8 by a thermal conductive adhesive.
Wherein, the width of the heat conducting pad 9 is the same as the width of the top surface of the transistor 8, and the material of the heat conducting pad 9 is the same as that of the first heat conducting plate 1.
In the invention, the heat dissipation structure of the dielectric integrated suspension wire power amplifier provided by the invention can be applied to any multilayer dielectric integrated suspension wire power amplifier.
In the present invention, in a concrete implementation, fans 7 are installed outside one heat sink 6 connected to each of the first heat conducting plate 1 and the second heat conducting plate 5, so that air-cooling heat dissipation can be performed forcibly.
In concrete implementation, the fan 7 is fixed outside the two radiating fins 6 through screws, so that heat exchange between the radiating fins and the external environment can be accelerated through the fan 7, and rapid heat dissipation is realized.
It should be noted that, for the present invention, the heat conducting metal block 10 is placed in the cavity of the fourth dielectric plate 4 below the power amplifier tube (i.e. the transistor 8) (i.e. placed after being hollowed), and the problem of slow heat conduction of the original medium is solved by the heat conducting metal block 10, so that the heat generated by the transistor 8 can be quickly conducted to the second heat conducting plate 5 through the heat conducting metal block 10 contacted with the bottom.
In the invention, in the concrete implementation, the left end and the right end of the top front side of the dielectric plate 3 on which the power amplifier mounting circuit is arranged are respectively provided with a grid direct current power supply port Vgs and a drain direct current power supply voltage port Vds;
the middle parts of the left end and the right end of the top of the dielectric slab 3 on which the power amplifier mounting circuit is arranged are respectively provided with a radio frequency output port RF _ Out and a radio frequency input port RF _ In;
the first heat conducting plate 1 and the second dielectric plate 2 are respectively provided with four openings at positions corresponding to the grid direct current supply port Vgs, the drain direct current supply voltage port Vds, the radio frequency output port RF _ Out and the radio frequency input port RF _ In, and the openings are not only beneficial to port connection, but also beneficial to heat dissipation of the power amplifier mounting circuit on the dielectric plate 3 on the layer where the power amplifier mounting circuit is located.
In the present invention, in a concrete implementation, the first heat dissipation cavity 20 and the second heat dissipation cavity 40 are respectively disposed on the second dielectric plate 2 and the fourth dielectric plate 4 at positions corresponding to circuit modules on the layer of dielectric plate 3 where the power amplifier mounting circuit is located, so as to enhance a heat dissipation effect on the power amplifier mounting circuit on the layer of dielectric plate 3 where the power amplifier mounting circuit is located.
It should be noted that the heat-conducting metal block accommodating through hole is located in the second heat dissipation cavity 40; the above-described thermal pad receiving through-hole is located in the first heat dissipation cavity 20.
Note that, in fig. 7, Vgs is a gate dc supply port for providing a gate bias voltage for the power amplifier; vds is a drain direct current supply voltage port and is used for providing drain bias voltage for the power amplifier; RF _ In is a radio frequency input port from which a radio frequency signal enters the power amplifier; RF _ Out is the radio frequency output port from which the radio frequency signal is output to the power amplifier.
In concrete implementation, the power amplifier mounting circuit on the dielectric plate 3 on which the power amplifier mounting circuit is located may be any one of power amplifier circuits using a power amplifier tube (transistor) for the existing power amplifier circuit, and is not described herein again for the prior art.
In order to more clearly understand the technical solution of the present invention, the following describes the working principle of the present invention.
Referring to fig. 7 and 8, in the dielectric integrated suspension line power amplifier, the transistor 8 is welded on the heat conducting metal block 10, and when the power amplifier (i.e. the power amplifier mounting circuit on the dielectric plate 3 of the layer where the power amplifier mounting circuit is located) works, heat is radiated, and the top surface and the bottom surface of the transistor 8 can radiate heat.
The heat emitted from the bottom surface of the transistor 8 is transferred to the heat conducting metal block 10, then transferred to the second heat conducting plate 5 through the heat conducting metal block 10, and transferred to the heat sink 6 from the second heat conducting plate 5, and the heat on the heat sink 6 can be taken out by the air flowing in the fan 7 connected with the heat sink in a directional manner.
The heat emitted from the top surface of the transistor 8 is conducted to the first heat conducting plate 1 through the heat conducting pad 9, and conducted from the first heat conducting plate 1 to the heat sink 6, and the heat on the heat sink 6 can be taken out by the air flowing in the fan 7 connected with the heat sink in a directional manner.
Therefore, according to the invention, based on the above heat dissipation structure design, the top surface and the bottom surface of the transistor 8 can be reliably and rapidly cooled, so that the heat dissipation effect of the transistor is ensured, the normal operation of the power amplification circuit is facilitated, higher maximum collector or drain dissipation power can be obtained at the same junction temperature, and the output power is improved.
It should be noted that, for the present invention, the main improvements are: aiming at the heat dissipation of the multi-layer plate structure power amplifier of the medium integrated suspension line, the original medium plate of the original medium integrated suspension line is replaced by a heat conduction plate (such as a red copper plate) with good heat conduction, and then materials with good heat conduction, such as heat conduction metal blocks (such as red copper) or heat conduction pads, are filled on the top surface and the bottom surface of the power amplifier tube (namely a transistor), so that a good heat dissipation effect is ensured.
Compared with the prior art, the heat dissipation structure for the dielectric integrated suspension line power amplifier provided by the invention has the advantages that the structural design is scientific, the heat dissipation of the transistor in the power amplification circuit can be effectively realized, the heat dissipation effect of the transistor is ensured, and the heat dissipation structure has great practical significance.
For the invention, the metal plate with high heat conductivity is used for replacing the top layer medium plate and the bottom layer medium plate which are difficult to conduct heat in the original medium integrated suspension line power amplifier structure, and the method specifically comprises the following steps: the poor medium plate of heat conduction of hugging closely the transistor bottom surface is hollowed and is set up the good heat conduction metal block of heat conduction to and hug closely insulating heat conduction pad at the transistor top surface, thereby let the heat can be effectively from the upper and lower surface of transistor, pass to first heat-conducting plate and second heat-conducting plate through heat conduction pad and heat conduction metal block on, then add the fan through the fin and effectively dispel the heat, guarantee to have good radiating effect.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A heat dissipation structure for a medium integrated suspension line power amplifier is characterized by comprising a first heat conduction plate (1), a second layer of medium plate (2), a layer of medium plate (3) where a power amplifier installation circuit is located, a fourth layer of medium plate (4) and a second heat conduction plate (5) which are sequentially connected from top to bottom;
a transistor (8) is arranged on the opening of the dielectric plate (3) on which the power amplifier mounting circuit is arranged;
wherein, the fourth layer of dielectric plate (4) is provided with a heat conducting metal block (10) at the position right below the transistor (8);
the bottom surface of the heat-conducting metal block (10) is connected with the top surface of the second heat-conducting plate (5) in a clinging manner;
the top surface of the heat-conducting metal block (10) is connected with the bottom surface of the transistor (8) in a clinging manner;
wherein, the second layer of dielectric plate (2) is provided with a heat conducting pad (9) at the position right above the transistor (8) through a hole;
the top surface of the heat conducting pad (9) is connected with the bottom surface of the first heat conducting plate (1) in a clinging manner;
the bottom surface of the heat conducting pad (9) is connected with the top surface of the transistor (8) in a clinging manner;
the first heat conducting plate (1) and the second heat conducting plate (5) are both copper plates or red copper plates;
the upper surface of the first heat conducting plate (1) and the lower surface of the second heat conducting plate (5) are respectively connected with a radiating fin (6) in a clinging manner.
2. The heat dissipation structure for the dielectric integrated suspension line power amplifier according to claim 1, wherein the dielectric plate (3) of the layer where the power amplifier mounting circuit is located is provided with a transistor mounting through hole at a position right below the bottom surface of the transistor (8);
a transistor (8) is mounted on the transistor mounting through hole.
3. The heat dissipation structure for the dielectric integrated suspension line power amplifier as claimed in claim 2, wherein the fourth dielectric plate (4) is provided with a heat conductive metal block accommodating through hole at a position right below the bottom surface of the transistor (8), and the heat conductive metal block (10) is disposed in the heat conductive metal block accommodating through hole.
4. The heat dissipation structure for a dielectric integrated suspension line power amplifier according to claim 2, wherein the second dielectric plate (2) has a thermal pad receiving through hole formed at a position directly above the transistor (8), and the thermal pad (9) is disposed in the thermal pad receiving through hole.
5. The heat dissipation structure for the dielectric integrated suspension line power amplifier of claim 1, wherein the upper surface of the first heat conduction plate (1) and the lower surface of the second heat conduction plate (5) are respectively riveted with the heat sink (6) by screws or bonded with the heat sink (6) by a heat conductive adhesive.
6. The heat dissipation structure for the dielectric integrated suspension line power amplifier as claimed in claim 1, wherein a fan (7) is fixedly installed outside one heat sink (6) to which the first heat conduction plate (1) and the second heat conduction plate (5) are respectively connected.
7. The heat dissipation structure for the power amplifier of the medium integrated suspension line as claimed in any one of claims 1 to 6, wherein the first heat conduction plate (1), the second dielectric plate (2), the third dielectric plate (3), the fourth dielectric plate (4) and the second heat conduction plate (5) are riveted by screws sequentially from top to bottom.
8. The heat dissipation structure for a dielectric integrated suspension line power amplifier according to any of claims 1 to 6, wherein for the transistor (8) with the pad on the bottom surface, the bottom pad of the transistor (8) is soldered on the heat conductive metal block (10);
the bottom surface of the heat-conducting metal block (10) is adhered by heat-conducting glue or is tightly adhered to the top surface of the second heat-conducting plate (5) by welding;
the top surface of the heat conducting pad (9) is bonded with the bottom surface of the first heat conducting plate (1) through heat conducting glue;
the bottom surface of the heat conducting pad (9) is bonded with the top surface of the transistor (8) through heat conducting glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010823611.1A CN111863745B (en) | 2020-08-17 | 2020-08-17 | Heat radiation structure for medium integrated suspension line power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010823611.1A CN111863745B (en) | 2020-08-17 | 2020-08-17 | Heat radiation structure for medium integrated suspension line power amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111863745A CN111863745A (en) | 2020-10-30 |
| CN111863745B true CN111863745B (en) | 2022-04-08 |
Family
ID=72970154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010823611.1A Active CN111863745B (en) | 2020-08-17 | 2020-08-17 | Heat radiation structure for medium integrated suspension line power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111863745B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141476B (en) * | 2021-12-02 | 2022-09-27 | 江苏晨朗电子集团有限公司 | Choke device |
| CN114725642B (en) * | 2022-03-16 | 2023-09-19 | 天津大学 | Packaging structure for dielectric integrated suspension wire and metal-dielectric integrated suspension wire active device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759278B2 (en) * | 2000-12-22 | 2004-07-06 | Texas Instruments Incorporated | Method for surface mounted power transistor with heat sink |
| US9496197B1 (en) * | 2012-04-20 | 2016-11-15 | Hrl Laboratories, Llc | Near junction cooling for GaN devices |
| JP6129177B2 (en) * | 2012-08-03 | 2017-05-17 | パナソニック株式会社 | Electronic component module and its mounting body |
| CN103887339B (en) * | 2012-12-19 | 2019-02-05 | 中兴通讯股份有限公司 | A kind of transistor, the radiator structure of transistor and the production method of transistor |
| US9385058B1 (en) * | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| CN103745962B (en) * | 2013-12-19 | 2017-05-10 | 联合汽车电子有限公司 | IGBT module suitable for electric automobile inverter, and packaging method and application method |
| CN105702645B (en) * | 2016-03-28 | 2019-01-25 | 张家港凯诚软件科技有限公司 | A kind of metal-oxide-semiconductor radiator structure and controller for electric vehicle |
| US11107744B2 (en) * | 2017-01-22 | 2021-08-31 | Rayben Technologies (Zhuhai) Limited | Insulated gate bipolar transistor module and manufacturing method thereof |
| CN106848520A (en) * | 2017-02-21 | 2017-06-13 | 电子科技大学 | A kind of waveguide cavity configuration based on the integrated suspended substrate stripline of medium |
| JP7039917B2 (en) * | 2017-10-06 | 2022-03-23 | 富士電機株式会社 | Cooler |
| CN108133915B (en) * | 2017-12-21 | 2020-04-03 | 乐健科技（珠海）有限公司 | Power module with built-in power device and double-sided heat dissipation function and manufacturing method thereof |
-
2020
- 2020-08-17 CN CN202010823611.1A patent/CN111863745B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111863745A (en) | 2020-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7299639B2 (en) | Thermoelectric module | |
| US20040037044A1 (en) | Heat sink for surface mounted power devices | |
| CN111863745B (en) | Heat radiation structure for medium integrated suspension line power amplifier | |
| JP2007335663A (en) | Semiconductor module | |
| US10524349B2 (en) | Printed circuit board with built-in vertical heat dissipation ceramic block, and electrical assembly comprising the board | |
| US7995351B2 (en) | Printed board | |
| CN108417546B (en) | Power electronic module | |
| KR101523701B1 (en) | Housing device of wireless communication apparatus | |
| US6178088B1 (en) | Electronic apparatus | |
| JP2006222461A (en) | Heat dissipation structure | |
| US10959319B2 (en) | Cooling package and power module | |
| JP2002289750A (en) | Multi-chip module and its radiation structure | |
| CN111064344B (en) | Power module with bottom metal heat dissipation substrate | |
| JP2002164485A (en) | Semiconductor module | |
| CN212628563U (en) | Circuit board assembly and server with same | |
| JPH05259669A (en) | Heat radiating structure of printed wiring board | |
| KR100756535B1 (en) | Heat radiator structure using pcb manufacturing method and thermoelectric semiconductor structure united by heat radiator thereof | |
| WO2021179989A1 (en) | Power heat dissipation device | |
| US20200236811A1 (en) | Thermally conductive insert element for electronic unit | |
| JP2003152368A (en) | Electronic equipment | |
| JPH0677347A (en) | Substrate | |
| JP3207656U (en) | Assembly structure of high power semiconductor and radiator | |
| CN218920827U (en) | Power amplifier structure and electronic product thereof | |
| CN219917146U (en) | Transistor assembly and laser device | |
| CN220383300U (en) | PCBA structure for improving efficiency of power circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |