JP3207656U - Assembly structure of high power semiconductor and radiator - Google Patents

Abstract

An assembly structure of a high power semiconductor and a radiator is provided. A high power semiconductor module 10 including a printed circuit board 101 and high power semiconductor elements 1 to 6 provided on the printed circuit board, a radiator 20 having at least two main radiating fins 20a and 20b, and a gap filling layer. 102, the high power semiconductor module is provided between two adjacent main radiating fins, the gap filling layer is provided between the high power semiconductor module and the main radiating fin, and the gap The filling layer is tightly bonded to the surface of the main radiating fin. In the present invention, the high power semiconductor module is provided in a storage space formed between the main radiator fins of the radiator, and a gap filling layer is provided between the high power semiconductor module and the main radiator fins. Heat generated by the high-power semiconductor module can be quickly transmitted to the main radiator fins of the radiator and quickly diffused to the outside through the main radiator fins. [Selection] Figure 6

Description

  The present invention relates to an assembly structure of a power semiconductor and a radiator, and more specifically to an assembly structure of a high power semiconductor and a radiator.

  High power semiconductor devices are subject to heat consumption during operation. If the amount of heat is too large to diffuse into the surrounding medium, the high power semiconductor device will be too hot to function. In order to prevent the temperature of the high-power semiconductor element from becoming excessively high, heat radiation is generally accelerated by increasing the number of radiators. However, as the power density increases, the amount of heat generated by high-power semiconductor elements increases. On the other hand, the conventional assembly structure of high-power semiconductors and radiators cannot satisfy the demand for heat dissipation, so a more effective heat dissipation structure is strongly demanded. It has been.

  An object of the present invention is to provide an assembly structure of a high-power semiconductor and a radiator, which quickly transfers and dissipates heat generated by the high-power semiconductor element, and the temperature becomes too high. It is to avoid affecting normal operation.

In one aspect, the assembly structure of the high power semiconductor and the radiator in the present invention is:
A first high power semiconductor module comprising a printed circuit board and a high power semiconductor element provided on a first surface of the printed circuit board;
A second high power semiconductor module comprising a printed circuit board and a high power semiconductor element provided on the first surface of the printed circuit board;
A radiator having at least three main fins;
A gap filling layer, and
The first high-power semiconductor module and the second high-power semiconductor module are provided between two adjacent main fins, and the gap filling layer is provided between the first high-power semiconductor module and the main fin; and The gap filling layer is tightly joined to the surface of the main fin, provided between the second high power semiconductor module and the main fin.

In another aspect, the assembly structure of the high power semiconductor and the radiator in the present invention is:
A high-power semiconductor module including a printed circuit board and a high-power semiconductor element provided on the first surface and the second surface of the printed circuit board;
A radiator having at least two main fins;
A gap filling layer, and
The high power semiconductor module is provided between two adjacent main fins, the gap filling layer is provided between the high power semiconductor module and the main fin, and the gap filling layer is closely attached to the surface of the main fin. Be joined.

  In one embodiment of the present invention, the high-power semiconductor device is a surface-mounted semiconductor.

  In one embodiment of the present invention, the high power semiconductor device is mounted on the printed circuit board by surface mounting technology.

  In one embodiment of the present invention, the printed circuit board is provided with a connector or a coupling hole for electrical connection.

  In one embodiment of the present invention, the gap filling layer has heat transferability and flexibility.

  In one embodiment of the present invention, the gap filling layer covers the high power semiconductor module.

  In one embodiment of the present invention, the radiator is manufactured by one metal member or a combination of one or more metal members.

  In one embodiment of the present invention, the top of the package of the high power semiconductor device is horizontal, a heat transfer metal piece is fixed, and the heat transfer metal piece and the pin through which a large current flows of the high power semiconductor device are electrically Connected to.

  Use of the assembly structure of a high power semiconductor and a radiator according to the present invention provides the following beneficial effects. According to the present invention, the high power semiconductor module is provided in the storage space formed between the main fins of the radiator, and the gap filling layer is provided between the high power semiconductor module and the main fins. Heat generated by the high-power semiconductor module can be quickly transferred to the main fins of the radiator and quickly diffused to the outside through the main fins.

Next, the present invention will be further described with reference to the drawings and embodiments.
It is a schematic diagram of a three-phase brushless motor drive circuit. 1 is a schematic view of a first embodiment of an assembly structure of a high power semiconductor and a radiator according to the present invention. It is a principle schematic diagram of the assembly structure of a high power semiconductor and a radiator shown in FIG. FIG. 3 is an exploded schematic view of an assembly structure of a high power semiconductor and a radiator shown in FIG. 2. It is the decomposition | disassembly schematic diagram in the other angle of the assembly structure of the high-power semiconductor shown in FIG. 2, and a radiator. It is a schematic diagram of 2nd Example of the assembly structure of the high power semiconductor of this invention and a radiator. It is a principle schematic diagram of the assembly structure of the high power semiconductor and the radiator shown in FIG. It is a disassembled schematic diagram of the assembly structure of the high-power semiconductor and the radiator shown in FIG. FIG. 7 is an exploded schematic view of the assembly structure of the high power semiconductor and the radiator shown in FIG. 6 at another angle. It is a schematic diagram of 3rd Example of the assembly structure of the high-power semiconductor and radiator of this invention. It is a principle schematic diagram of the assembly structure of the high power semiconductor and the radiator shown in FIG.

  Specific embodiments of the present invention will be described in detail with reference to the drawings so that the technical features, objects, and effects of the present invention can be understood more clearly.

  Hereinafter, an embodiment of an assembly structure of a high power semiconductor and a radiator according to the present invention will be described in detail. Legends of these embodiments are shown in the drawings, wherein the same or similar reference numerals indicate the same or similar parts or elements having the same or similar functions.

  In the description of the assembly structure of the high power semiconductor and radiator of the present invention, such as "front", "back", "upper", "lower", "upper end", "lower end", "upper", "lower" It should be understood that the azimuths and positional relationships indicated by the terms are the azimuths and positional relationships shown on the basis of the drawings, and are merely for the purpose of facilitating and simplifying the description of the present invention. It should not be construed as limiting the invention, as it does not indicate or imply that the apparatus or parts shown should be in a particular orientation for construction or operation in a particular orientation. Also, the terms “first”, “second”, etc. are for illustrative purposes only and should not be understood to indicate or imply relative importance.

  FIG. 1 is a schematic diagram of a common three-phase brushless motor drive circuit. The three-phase brushless motor drive circuit has a power supply 8, a drive module 13 connected to the power supply 8, and a three-phase brushless motor 7. The drive module 13 is connected to the three-phase brushless motor 7. The three-phase brushless motor 7 is driven. The drive module 13 includes a first high-power semiconductor module 10 and a second high-power semiconductor module 11, and the first high-power semiconductor module 10 is provided with at least three high-power semiconductor elements 1, 3, and 5. The high power semiconductor module 11 is provided with at least three high power semiconductor elements 2, 4 and 6 separately. The high power semiconductor elements 1-6 may be MOSFETs or other semiconductor switch devices. If the large amount of heat generated by the high power semiconductor elements 1 to 6 during operation is not quickly diffused to the outside, the high power semiconductor elements 1 to 6 become too hot to function. However, the assembly structure of the high power semiconductor and the radiator according to the present invention can well solve this problem. How the assembly structure of the high power semiconductor and radiator according to the present invention is realized will be described in detail below.

  2 and 3 are schematic views of a first embodiment of an assembly structure of a high power semiconductor and a radiator according to the present invention. The radiator 20 has three main radiating fins 20a, 20b, and 20c, and a storage space for storing the first high-power semiconductor module 10 is formed between the main radiating fins 20a and the main radiating fins 20b. The circuit board 101 and the high-power semiconductor elements 1, 3, 5 and the gap filling layer 102 mounted on the first surface are inserted into the storage space. A storage space for storing the second high power semiconductor module 11 is formed between the main heat dissipation fin 20b and the main heat dissipation fin 20c, and the high power semiconductor element 2 mounted on the printed circuit board 111 and the first surface thereof. 4, 6 and the gap filling layer 112 are inserted into the storage space.

  2 to 5, gap filling layers 102 and 112 are provided between the printed circuit boards 101 and 111 and the main radiating fins 20a, 20b, and 20c, respectively, for better heat dissipation. The gap filling layers 102 and 112 are made of a heat conductive material. The gap filling layer 102 is filled in a gap between the first high power semiconductor module 10 and the main heat radiation fins 20a and 20b. The gap filling layer 112 is filled in the gap between the second high power semiconductor module 11 and the main heat radiation fins 20b and 20c. The gap filling layers 102 and 112 have a two-layer structure for better heat dissipation and assembly. The gap filling layer 102 includes a first layer 102a and a second layer 102b that are laminated together. The second layer 102b is positioned outside the first layer 102a and is tightly joined to the surfaces of the main radiating fins 20a and 20b. The gap filling layer 112 includes a first layer 112a and a second layer 112b that are laminated together. The second layer 112b is positioned outside the first layer 112a and is tightly joined to the surfaces of the main radiating fins 20b and 20c. The first layers 102a and 112a and the second layers 102b and 112b of the gap filling layers 102 and 112 are each made of a heat conductive insulating high temperature resistant material. Since the first layers 102a and 112a are flexible and have adhesiveness on the surface thereof, the gaps can be filled well, and the first layers 102a and 112a are fixed to the surfaces of the printed circuit boards 101 and 111 and the high-power semiconductor elements 1 to 6 to provide a buffering action You can also Since the second layers 102b and 112b are strong and have no stickiness on the surface, and the friction coefficient of the second layers 102b and 112b is smaller than that of the first layers 102a and 112a, the high-power semiconductor modules 10 and 11 are It is easy to slide and insert into the storage space formed between the main radiation fins 20a, 20b, 20c. The first layers 102a and 112a may be made of a silicon elastic body or other appropriate material, and the second layers 102b and 112b may be gaskets made of polyethylene terephthalate. Alternatively, the second layers 102b and 112b are made of carbon-filled glass fiber, carbon-filled polyimide, silicon elastic, silicon rubber-coated polyimide, or other suitable material.

  2 to 5, in this embodiment, high power semiconductor elements 1, 3, and 5 are mounted on the first surface of the printed circuit board 101, and the high power semiconductor elements 1, 3, and 5 are formed in the gap filling layer 102. The second surface of the printed circuit board 101 is tightly joined to the first layer 102a of the gap filling layer 102. By doing so, good contact between the printed circuit board 101 and the high-power semiconductor elements 1, 3, 5 and the gap filling layer 102 on the printed circuit board 101 can be maintained, and the printed circuit board 101 and the top thereof can be quickly and timely. Heat can be transferred from the high power semiconductor elements 1, 3, 5 to the radiator 20. The heat dissipation structure of the printed circuit board 111 and the high-power semiconductor elements 2, 4, 6 is the same as the heat dissipation structure of the printed circuit board 101 and the high-power semiconductor elements 1, 3, 5 on the printed circuit board 101. Omitted. In this embodiment, the drive circuit further includes a third circuit module 14, the first high power semiconductor module 10 and the second high power semiconductor module 11 are connected by a connector 12, and the second high power semiconductor module 11 is connected. And the third circuit module 14 are connected by a connector 15.

  6 to 9 are schematic views of a second embodiment of the assembly structure of the high power semiconductor and radiator according to the present invention. The radiator 20 has two main radiating fins 20a and 20b, and a storage space for storing the high-power semiconductor module 10 is formed between the main radiating fin 20a and the main radiating fin 20b. Printed circuit board 101, high power semiconductor elements 1, 3, 5 mounted on the first surface of printed circuit board 101, high power semiconductor elements 2, 4, 5 mounted on the second surface of printed circuit board 101, 6 and the gap filling layer 102 are inserted into the storage space.

  6 to 9, a gap filling layer 102 is provided between the printed circuit board 101 and the main radiating fins 20a and 20b in order to radiate heat better. The gap filling layer 102 is made of a heat conductive material. The gap filling layer 102 is filled in a gap between the first high power semiconductor module 10 and the main heat radiation fins 20a and 20b. The gap filling layer 102 has a two-layer structure for better heat dissipation and assembly. The gap filling layer 102 includes a first layer 102a and a second layer 102b that are laminated together. The second layer 102b is positioned outside the first layer 102a and is tightly joined to the surfaces of the main radiating fins 20a and 20b. The first layer 102a and the second layer 102b of the gap filling layer 102 are each made of a heat conductive insulating high temperature resistant material. Since the first layer 102a is flexible and has a sticky surface, the first layer 102a can be well filled with gaps and can be fixed to the surface of the printed circuit board 101 and the high power semiconductor elements 1 to 6 to provide a buffering action. Since the second layer 102b is tough and has no stickiness on the surface thereof, and the friction coefficient of the second layer 102b is smaller than that of the first layer 102a, the printed circuit board 101 is slid to move the main radiating fins 20a, It is easy to insert into the storage space formed between 20b. The first layer 102a may be made of a silicon elastic body or other appropriate material, and the second layer 102b may be a gasket made of polyethylene terephthalate. Alternatively, the second layer 102b is made of carbon-filled glass fiber, carbon-filled polyimide, silicon elastic body, silicon rubber-coated polyimide, or other suitable material.

  Referring to FIGS. 6 to 9, in this embodiment, high power semiconductor elements are mounted on two surfaces of the printed circuit board 101. Among them, the high power semiconductor elements 1, 3, and 5 are mounted on the first surface of the printed circuit board 101, and the high power semiconductor elements 2, 4, and 6 are mounted on the second surface of the printed circuit board 101. Since the high power semiconductor elements 1 to 6 are tightly bonded to the first layer 102a of the gap filling layer 102, good contact between the high power semiconductor elements 1 to 6 and the gap filling layer 102 on the printed circuit board 101 is achieved. Thus, heat can be transferred to the radiator 20 from the printed circuit board 101 and the high-power semiconductor elements 1 to 6 on the printed circuit board 101 in a timely and prompt manner. In this embodiment, the drive circuit further includes a third circuit module 14, and the first high power semiconductor module 10 and the third circuit module 14 are connected by a connector 12.

  FIG. 10 and FIG. 11 are schematic views of the third embodiment of the assembly structure of the high power semiconductor and the radiator according to the present invention, which are further improved on the basis of the second embodiment. In order to obtain a better heat dissipation effect, heat transfer metal pieces 201, 203, 205 are added to the high power semiconductor elements 1, 3, 5 on the first surface of the printed circuit board 101 of the high power semiconductor module 10, respectively. The heat transfer metal pieces 201, 203, 205 are horizontal and fixed to the top of the package of the high power semiconductor elements 1, 3, 5. The heat transfer metal pieces 201, 203, and 205 are electrically connected to pins through which a large current flows in the high-power semiconductor elements 1, 3, and 5, such as MOSFET drains, respectively, by manual welding or SMT method. Heat transfer metal pieces 202, 204, 206 are added to the high power semiconductor elements 2, 4, 6 on the second surface of the printed circuit board 101, respectively. The heat transfer metal pieces 202, 204, 206 are respectively horizontal and fixed to the top of the package of the high power semiconductor elements 2, 4, 6. The heat transfer metal pieces 202, 204, and 206 are electrically connected to pins through which a large current flows in the high-power semiconductor elements 2, 4, and 6, such as MOSFET drains, by hand welding or SMT method, respectively. The heat transfer metal pieces 201-206 may be copper, aluminum, or alloy pieces. The heat transfer metal pieces 201 to 206 are respectively connected to the large current pins of the large power semiconductor elements 1 to 6 to quickly transfer the heat generated at the large current pins to the main radiating fins 20a and 20b of the radiator 20, A better heat dissipation effect can be obtained. Since the other structure of the embodiment is the same as that of the second embodiment, the description thereof is omitted here.

  In the present invention, the high power semiconductor element may be mounted on the printed circuit board by surface mounting technology (SMT), or may be welded to the printed circuit board by soldering. The radiator can be processed with a metal material. For example, an aluminum alloy, aluminum, copper alloy, copper, etc. may be extruded using one metal material, processed by a method such as computer numerical control (CNC), or a plurality of metal members may be welded or You may manufacture combining by screw joining.

  According to the present invention, the printed circuit board on which the high-power semiconductor element is mounted is provided in the storage space formed between the main fins of the radiator, and the gap is filled between the printed circuit board and the main fins. By providing the layer, heat generated by the high-power semiconductor element and the printed circuit board can be quickly transferred to the main fin of the radiator and quickly diffused to the outside through the main fin.

  As described above, the embodiments of the present invention have been described in association with the drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are illustrative only and not limiting. Those skilled in the art can implement the present invention in many forms without departing from the scope of the present invention and the scope of the claims, all of which belong to the scope of protection of the present invention. It is.

Claims (9)

An assembly structure of a high power semiconductor and a radiator,
A first high power semiconductor module comprising: a printed circuit board; and a high power semiconductor element provided on the first surface of the printed circuit board;
A second high power semiconductor module comprising: a printed circuit board; and a high power semiconductor element provided on the first surface of the printed circuit board;
A radiator having at least three main fins;
A gap filling layer;
Including
The first high power semiconductor module and the second high power semiconductor module are provided between two adjacent main fins, and the gap filling layer is formed between the first high power semiconductor module and the main fin. And between the second high power semiconductor module and the main fin, and the gap filling layer is tightly bonded to the surface of the main fin.
Assembly structure of high power semiconductor and radiator. An assembly structure of a high power semiconductor and a radiator,
A high-power semiconductor module including a printed circuit board, and a high-power semiconductor element provided on the first surface and the second surface of the printed circuit board;
A radiator having at least two main fins;
A gap filling layer, and
The high power semiconductor module is provided between two adjacent main fins, the gap filling layer is provided between the high power semiconductor module and the main fin, and the gap filling layer is a surface of the main fin. An assembly structure of a high-power semiconductor and a radiator characterized by being closely joined to each other. The high-power semiconductor element is a surface-mounted semiconductor,
The assembly structure of the high power semiconductor and radiator according to claim 1 or 2. The high-power semiconductor element is mounted on the printed circuit board by surface mounting technology,
The assembly structure of the high power semiconductor and radiator according to claim 1 or 2. The printed circuit board is provided with a connector or a coupling hole for electrical connection,
The assembly structure of the high power semiconductor according to claim 3 or 4 and a radiator. The gap filling layer has heat transferability and flexibility,
The assembly structure of the high power semiconductor and radiator according to claim 1 or 2. The gap filling layer covers the first high power semiconductor module and the second high power semiconductor module, respectively.
The assembly structure of a high power semiconductor and a radiator according to claim 1. The radiator is manufactured from one metal member or a combination of one or more metal members,
The assembly structure of the high power semiconductor and radiator according to claim 1 or 2. The top of the package of the high power semiconductor element is horizontal, a heat transfer metal piece is fixed, and the heat transfer metal piece and a pin through which a large current flows of the high power semiconductor element are electrically connected To
The assembly structure of the high power semiconductor and radiator according to claim 2.

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