CN111295035B - Metal base PCB high-current SSPC wiring structure - Google Patents
Metal base PCB high-current SSPC wiring structure Download PDFInfo
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- CN111295035B CN111295035B CN201811496901.9A CN201811496901A CN111295035B CN 111295035 B CN111295035 B CN 111295035B CN 201811496901 A CN201811496901 A CN 201811496901A CN 111295035 B CN111295035 B CN 111295035B
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- pad
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- bus bar
- drain
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
- H05K1/116—Lands, clearance holes or other lay-out details concerning the surrounding of a via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Structure Of Printed Boards (AREA)
Abstract
The invention discloses a metal-based PCB high-current SSPC wiring structure, which comprises a bus bar; a power MOS tube; a metal-based PCB board disposed over the bus bar, the metal-based PCB board having a bottom metal base layer, an intermediate circuit layer, and a top insulating layer, the bottom metal base layer being in surface contact with the bus bar, the top insulating layer having a gate pad, a drain pad, and a source pad formed thereon; a first via disposed between the gate pad and the intermediate circuit layer; and a second via disposed between the drain pad and the bottom metal-based layer; and a power output line is formed on the top insulating layer, and the source electrode pad is electrically connected with the power output line. The invention has the beneficial effects that: the PCB design based on the metal base is adopted, the metal base is used as a heat conduction path and also used as a power conduction path, and the problem of power dissipation of large current is effectively solved.
Description
Technical Field
The invention relates to a metal-based PCB high-current SSPC wiring structure.
Background
Solid state power controllers (Solid State Power Controller, SSPCs) are based on power electronics and communications technology, retrieving channel control commands from an external bus, and implementing on and off control of the load. In abnormal situations (such as overload or short circuit), the SSPCs can cut off the load and protect the aircraft distribution network. SSPC has the protection function of the traditional breaker and the load on-off function of the contactor/relay, and simultaneously can feed back the channel state in real time, so that the SSPC is widely applied to modern aircrafts (A380, B787, A350, C919 and the like).
Currently SSPCs are limited to low current applications, such as B787, where the maximum throughput of the board is only 50A, i.e., 50A of power input is acceptable at maximum. This situation is mainly caused by two reasons:
the traditional SSPC based on the split power MOS parallel technology has large volume and low power density when processing large current.
Without good heat dissipation measures, the power dissipation of the power MOS during normal operation cannot be effectively taken.
Disclosure of Invention
The invention aims to solve the technical problem of heat dissipation of SSPC and provides a novel metal-based PCB high-current SSPC wiring structure.
In order to achieve the purpose, the technical scheme of the invention is as follows: a metal-based PCB high-current SSPC wiring structure includes,
a bus bar;
a power MOS transistor having a transistor gate, a transistor drain, and a transistor source;
a metal-based PCB board disposed over the bus bar, the metal-based PCB board having a bottom metal base layer in surface contact with the bus bar, an intermediate circuit layer, and a top insulating layer on which a gate pad electrically connected to the pipe gate, a drain pad electrically connected to the pipe drain, and a source pad electrically connected to the pipe source are formed;
a first via disposed between the gate pad and the intermediate circuit layer; the method comprises the steps of,
a second via disposed between the drain pad and the bottom metal-based layer;
and a power output line is formed on the top insulating layer, and the source electrode pad is electrically connected with the power output line.
As a preferable scheme of the metal-based PCB high-current SSPC wiring structure, the pipe gate is electrically connected with the gate pad by a bonding wire, the pipe drain is electrically connected with the drain pad by a bonding wire, and the pipe source is electrically connected with the source pad by a bonding wire.
The invention also provides another metal-based PCB high-current SSPC wiring structure, which comprises,
a bus bar;
a power MOS transistor having a transistor gate, a transistor drain, and a transistor source;
a metal-based PCB board disposed above the bus bar, the metal-based PCB board having a bottom metal base layer in surface contact with the bus bar, an intermediate circuit layer, and a top insulating layer on which a gate pad electrically connected to the pipe gate and a source pad electrically connected to the pipe source are formed, the bottom metal base layer on which a drain pad electrically connected to the pipe drain is formed;
a first via disposed between the gate pad and the intermediate circuit layer; the method comprises the steps of,
and a power output line is formed on the top insulating layer, and the source electrode pad is electrically connected with the power output line.
As a preferable scheme of the metal-based PCB high-current SSPC wiring structure, the pipe gate is electrically connected with the gate pad by a bonding wire, the pipe drain is electrically connected with the drain pad by a bonding wire, and the pipe source is electrically connected with the source pad by a bonding wire.
As the preferable scheme of the metal-based PCB high-current SSPC wiring structure, a fixed hole is formed on the bus bar, a fixed hole corresponding to the fixed hole is formed on the metal-based PCB, and the fixed hole are connected by a screw, so that the metal-based PCB is fixed on the bus bar.
Compared with the prior art, the invention has the beneficial effects that: the PCB design based on the metal base is adopted, the metal base is used as a heat conduction path and also used as a power conduction path, so that the problem of power dissipation of high current is effectively solved, and extra volume and weight cost are not caused.
In addition to the technical problems, features constituting the technical solutions and advantageous effects caused by the technical features of the technical solutions described above, other technical problems that the present invention can solve, other technical features included in the technical solutions and advantageous effects caused by the technical features will be described in further detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of a metal-based PCB board according to an embodiment of the invention.
Fig. 3 is a schematic front view of a metal-based PCB according to another embodiment of the present invention.
Fig. 4 is a schematic front view of a metal-based PCB according to another embodiment of the present invention.
Detailed Description
The invention will be described in further detail below with reference to the drawings by means of specific embodiments. The description of these embodiments is provided to assist understanding of the present invention, but is not to be construed as limiting the present invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1 and 2, a metal-based PCB high current SSPC wiring structure is shown. The wiring structure mainly comprises a bus bar 3, a power MOS tube 1, a metal base PCB 2 and other components.
In this embodiment, the solid state power controller SSPC has 4 channels (more or fewer channels may be arranged according to actual needs), and the throughput of each channel is 50A, i.e., the power throughput of the whole board may reach 200A.
Each channel is formed by connecting 5 power MOS tubes in parallel (the parallel number can be increased according to the current demand). The power MOS transistor 1 has a transistor gate 11, a transistor drain 12, and a transistor source 13.
The metal-based PCB board 2 is arranged above the bus bar 3. The metal-based PCB board 2 has a bottom metal base layer 201, an intermediate circuit layer 202, and a top insulating layer 203. The bottom metal base layer 201 is in surface contact with the bus bar 3. The top insulating layer 203 has formed thereon a gate pad 21 electrically connected to the pipe gate 11, a drain pad 202 electrically connected to the pipe drain 12, and a source pad 23 electrically connected to the pipe source 13. The bottom metal base layer 201 is aluminum-based or copper-based, and conducts both heat and current. The Prepreg is arranged on the substrate, and plays roles of insulation and adhesive, and the uppermost layer is a PCB Core, usually an FR4 substrate. Located between Prepreg and Core is a PCB trace in which inter-layer vias may be provided to support the multi-layer trace. The large current traces of the power output channels of the SSPCs are located on the surface layer of the multi-layer PCB.
A first via is placed between the gate pad 21 and the intermediate circuit layer 202. The gate pad 21 is connected to the intermediate circuit layer 202 through the first via hole and is connected to a digital control circuit.
A second via 20 is placed between the drain pad 202 and the bottom metal base layer 201. The drain pad 202 is connected to the bottom metal base layer 201 through the second via 20, from which power input is taken.
The source pads 23 are connected to the surface layer power output lines 24 of the metal-based PCB board 2. The dies of the 5 MOS are connected in parallel and then are combined into the total single-path power output.
The SSPC board is provided with two power output connectors for connecting 4 SSPC power output channels and an external load; the digital signal connector is used for connecting a power supply of the SSPC and a communication cable.
The D-pole of the MOS tube is directly connected to the metal base through metallized holes, the latter being fixed to the bus bar 3 by bolts 4 through holes, both conducting heat and conducting current.
Referring to fig. 3, another embodiment is shown. The gate pad 21, the drain pad 202, and the source pad 23 are not uniform in size with respect to the first embodiment.
Referring to fig. 4, yet another embodiment is shown. With respect to the first embodiment, the second via is eliminated and the drain pad 202 is formed directly on the bottom surface of the bottom metal base layer 201. That is, when considering the manufacturing process, the flip-chip process and the bonding process are combined. For the D pole on the back, a flip-chip technology is adopted; and for the front G and S poles, a common binding process is adopted.
The foregoing has outlined rather broadly the more detailed description of the invention in order that the detailed description thereof that follows may be better understood, and in order that the present invention may be better understood. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (4)
1. A metal-based PCB high-current SSPC wiring structure having a plurality of vias, wherein each via comprises,
a bus bar;
a power MOS transistor having a transistor gate, a transistor drain, and a transistor source;
a metal-based PCB board disposed over the bus bar, the metal-based PCB board having a bottom metal base layer in surface contact with the bus bar, an intermediate circuit layer, and a top insulating layer on which a gate pad electrically connected to the pipe gate, a drain pad electrically connected to the pipe drain, and a source pad electrically connected to the pipe source are formed;
a first via disposed between the gate pad and the intermediate circuit layer; the method comprises the steps of,
a second via disposed between the drain pad and the bottom metal-based layer;
a power output line is formed on the top insulating layer, and the source electrode pad is electrically connected with the power output line;
the bus bar is provided with a fixing hole, the metal base PCB is provided with a fixed hole corresponding to the fixing hole, and the fixing hole is connected with the fixed hole by a screw piece, so that the metal base PCB is fixed on the bus bar.
2. The metal-based PCB high current SSPC wiring structure of claim 1, wherein the tube gate is electrically connected to the gate pad with a bonding wire, the tube drain is electrically connected to the drain pad with a bonding wire, and the tube source is electrically connected to the source pad with a bonding wire.
3. A metal-based PCB high-current SSPC wiring structure having a plurality of vias, wherein each via comprises,
a bus bar;
a power MOS transistor having a transistor gate, a transistor drain, and a transistor source;
a metal-based PCB board disposed above the bus bar, the metal-based PCB board having a bottom metal base layer in surface contact with the bus bar, an intermediate circuit layer, and a top insulating layer on which a gate pad electrically connected to the pipe gate and a source pad electrically connected to the pipe source are formed, the bottom metal base layer on which a drain pad electrically connected to the pipe drain is formed;
a first via disposed between the gate pad and the intermediate circuit layer; the method comprises the steps of,
a power output line is formed on the top insulating layer, and the source electrode pad is electrically connected with the power output line;
the bus bar is provided with a fixing hole, the metal base PCB is provided with a fixed hole corresponding to the fixing hole, and the fixing hole is connected with the fixed hole by a screw piece, so that the metal base PCB is fixed on the bus bar.
4. The metal-based PCB high current SSPC wiring structure of claim 3, wherein the tube gate is electrically connected to the gate pad with a bonding wire, the tube drain is electrically connected to the drain pad with a bonding wire, and the tube source is electrically connected to the source pad with a bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811496901.9A CN111295035B (en) | 2018-12-07 | 2018-12-07 | Metal base PCB high-current SSPC wiring structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811496901.9A CN111295035B (en) | 2018-12-07 | 2018-12-07 | Metal base PCB high-current SSPC wiring structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111295035A CN111295035A (en) | 2020-06-16 |
| CN111295035B true CN111295035B (en) | 2023-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811496901.9A Active CN111295035B (en) | 2018-12-07 | 2018-12-07 | Metal base PCB high-current SSPC wiring structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007234675A (en) * | 2006-02-27 | 2007-09-13 | Denso Corp | Electronic apparatus |
| CN101199248A (en) * | 2005-06-15 | 2008-06-11 | 揖斐电株式会社 | Multilayer printed wiring board |
| CN102029922A (en) * | 2009-09-27 | 2011-04-27 | 天津市松正电动科技有限公司 | Double-sided aluminum substrate-based power metal oxide semiconductor field effect transistor (MOSFET) parallel circuit and structural design |
| CN104347577A (en) * | 2013-08-08 | 2015-02-11 | 英飞凌科技股份有限公司 | Redistribution board, electronic component and module |
| CN108494275A (en) * | 2017-11-16 | 2018-09-04 | 广州擎天实业有限公司 | A kind of high-heat conductivity and large-power synchronous rectification module |
-
2018
- 2018-12-07 CN CN201811496901.9A patent/CN111295035B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101199248A (en) * | 2005-06-15 | 2008-06-11 | 揖斐电株式会社 | Multilayer printed wiring board |
| JP2007234675A (en) * | 2006-02-27 | 2007-09-13 | Denso Corp | Electronic apparatus |
| CN102029922A (en) * | 2009-09-27 | 2011-04-27 | 天津市松正电动科技有限公司 | Double-sided aluminum substrate-based power metal oxide semiconductor field effect transistor (MOSFET) parallel circuit and structural design |
| CN104347577A (en) * | 2013-08-08 | 2015-02-11 | 英飞凌科技股份有限公司 | Redistribution board, electronic component and module |
| CN108494275A (en) * | 2017-11-16 | 2018-09-04 | 广州擎天实业有限公司 | A kind of high-heat conductivity and large-power synchronous rectification module |
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| CN111295035A (en) | 2020-06-16 |
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