CN112187239A - Solid-state power controller for on-board 28VDC power distribution control and application structure - Google Patents

Solid-state power controller for on-board 28VDC power distribution control and application structure Download PDF

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Publication number
CN112187239A
CN112187239A CN201910599773.9A CN201910599773A CN112187239A CN 112187239 A CN112187239 A CN 112187239A CN 201910599773 A CN201910599773 A CN 201910599773A CN 112187239 A CN112187239 A CN 112187239A
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CN
China
Prior art keywords
power
28vdc
layer
gan
copper layer
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CN201910599773.9A
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Chinese (zh)
Inventor
万波
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Shanghai Aviation Electric Co Ltd
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Shanghai Aviation Electric Co Ltd
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Priority to CN201910599773.9A priority Critical patent/CN112187239A/en
Publication of CN112187239A publication Critical patent/CN112187239A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

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Abstract

The invention discloses a solid-state power controller for 28VDC power distribution control on a public machine and an application structure thereof, which comprise a power channel unit formed by a plurality of GaN power MOS tubes in parallel array. The invention also discloses an application structure of the solid-state power controller for 28VDC power distribution control on the computer, which comprises two 28VDC bus bars; a solid state power controller in which the bottom aluminum layer interfaces with one of the 28VDC bus bars and in which the outer copper layer interfaces with the other 28VDC bus bar. The invention has the beneficial effects that: in terms of power density, the volume of the entire SSPC is comparable to that of a conventional 80A contactor, but the flux reaches 350A, which equivalently increases the power density by a factor of 3.5.

Description

Solid-state power controller for on-board 28VDC power distribution control and application structure
Technical Field
The invention relates to the field of on-board power distribution, in particular to a solid-state power controller for on-board 28VDC power distribution control and an application structure.
Background
The Solid State Power Controller (SSPC) receives a control command from an external bus, and after resolving, sends out a driving signal of the Power MOS transistor to distribute Power to a corresponding load channel. Under an abnormal condition (such as overload or short circuit), the solid-state power controller pulls down the driving signal of the power MOS tube, disconnects a load loop and protects the airplane distribution network. Meanwhile, the solid-state power controller can also collect the state of a load channel, and sends information such as voltage, current, channel on-off state and the like to an external bus through the microprocessor.
The solid-state power controller has the characteristics of no contact, no electric arc, high reliability and the like, and is widely applied to modern airplanes, such as A380, B787 and other typical civil airplanes.
While solid state power controllers have been in use for decades, current applications remain at low current specifications. Currently on civil aircraft, the maximum rated current of a solid state power controller is only 50A. The application of the solid-state power controller in high-power situations is limited by the aspects of volume, heat dissipation and the like, and compared with the conventional switching device such as a Contactor, the current high-current SSPC design cannot reach the same level of an Electronic Load Control Contactor (ELCC) in terms of power density.
Referring to fig. 1, due to the large current, the conventional method of connecting two onboard 28VDC buses is still a contactor, and a solid state power controller is not used.
Disclosure of Invention
The technical problem solved by the invention is that the existing solid-state power controller is in the dilemma of low current specification, and a novel solid-state power controller is provided and applied to on-board 28VDC power distribution control.
In order to achieve the purpose, the technical scheme of the invention is as follows: a solid state power controller for on-board 28VDC power distribution control includes,
the power channel unit is formed by a plurality of GaN power MOS tubes in parallel array.
As a preferable scheme of the solid-state power controller for on-board 28VDC power distribution control, the plurality of GaN power MOS tubes are all arranged on the same plane.
The preferable scheme of the solid-state power controller for on-board 28VDC power distribution control also comprises,
a PCB body;
a digital control loop unit; and the number of the first and second groups,
a communication connector unit;
and the digital control loop unit outputs a corresponding switch driving signal to the power channel unit according to an external control signal from the communication connector unit so as to control the power channel unit to work.
As a preferred scheme of the solid-state power controller for on-board 28VDC power distribution control, the PCB body has a top surface layer, an intermediate copper layer, a prepreg layer, and a bottom aluminum layer sequentially arranged from top to bottom, the bottom aluminum layer being used as a power input;
the top surface layer is divided into a surface layer front part and a surface layer rear part;
the power channel unit, the digital control loop unit and the communication connector unit are arranged on the front part of the surface layer;
an external copper layer is arranged on the rear part of the surface layer and is used as power output;
a first through hole is formed between the outer copper layer and the middle copper layer on the PCB body so as to realize the electric connection between the outer copper layer and the middle copper layer;
the GaN power MOS tube is provided with an input end, an output end and a control end;
a second through hole is formed between the input end of the GaN power MOS tube and the bottom aluminum layer on the PCB body so as to realize the electrical connection between the input end of the GaN power MOS tube and the bottom aluminum layer;
a third through hole is formed between the output end of the GaN power MOS tube and the middle copper layer on the PCB body so as to realize the electrical connection between the output end of the GaN power MOS tube and the middle copper layer;
a control end of the GaN power MOS tube and the wiring of the digital control loop unit are formed on the surface of the top surface layer, so that the control end of the GaN power MOS tube is electrically connected with the digital control loop unit;
the control end of the GaN power MOS tube is used for receiving the switch driving signal and selectively electrically connecting or disconnecting the bottom aluminum layer and the middle copper layer according to the switch driving signal.
The invention also provides an application structure of the solid-state power controller for on-board 28VDC power distribution control, which comprises,
two 28VDC bus bars;
one of the aforementioned solid state power controllers in which the bottom aluminum layer interfaces with one of the 28VDC bus bars and in which the outer copper layer interfaces with the other 28VDC bus bar.
Compared with the prior art, the invention has the beneficial effects that: the flux is large, and the power density is increased.
In addition to the technical problems solved by the present invention, the technical features constituting the technical solutions, and the advantageous effects brought by the technical features of the technical solutions described above, other technical problems solved by the present invention, other technical features included in the technical solutions, and advantageous effects brought by the technical features will be described in further detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic view illustrating a structure of a conventional contactor for coupling two bus bars in the prior art.
Fig. 2 is a schematic structural diagram according to an embodiment of the present invention.
Fig. 3 is a laminated view (viewed in the length direction) of the PCB body in an embodiment of the present invention.
Fig. 4 is a laminated view (viewed from the width direction) of the PCB body in an embodiment of the present invention.
FIG. 5 is a trace diagram of a GaN driving signal (laid on the top surface of the PCB body) according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of a chip pin of a GaN power MOS transistor according to an embodiment of the invention.
Fig. 7 is a schematic diagram of an application structure of a solid-state power controller according to an embodiment of the present invention.
Fig. 8 is a schematic diagram of an application structure of a solid-state power controller according to an embodiment of the present invention.
Detailed Description
The invention will be described in further detail below with reference to specific embodiments and drawings. Here, the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 2-4, a solid state power controller for on-board 28VDC power distribution control with 350A current capability is shown. The solid-state power controller mainly comprises a PCB body 1, a power channel unit 2, a digital control loop unit 3, a communication connector unit 4 and the like.
The PCB body 1 is of a four-layer laminated structure and is provided with a top surface layer 11, a middle copper layer 12, a prepreg layer 13 and a bottom aluminum layer 14 which are sequentially arranged from top to bottom. The bottom aluminum layer 14 serves as a power input for receiving a large current of power input.
The top skin 11 is divided into a front skin 111 and a back skin 112. The front skin portion 111 and the rear skin portion 112 may be bisected or may be divided in other proportions.
The power channel unit 2, the digital control loop unit 3 and the communication connector unit 4 are arranged on the front surface 111. Wherein, the power channel unit 2 is located at the left side, and the digital control loop unit 3 and the communication connector unit 4 are located at the right side. The digital control loop unit 3 outputs a corresponding switch driving signal to the power channel unit 2 according to an external control signal from the communication connector unit 4, so as to control the power channel unit 2 to work.
An outer copper layer 6 is arranged on the rear part 112 of the skin layer. The outer copper layer 6 serves as a power output for carrying a large current of the power output.
The power channel unit 2 is formed by a plurality of GaN power MOS transistors 20 in parallel. All the GaN power MOS transistors 20 are connected in parallel with each other. The power channel unit 2 has only one channel. The plurality of GaN power MOS transistors 20 are uniformly arranged on the same plane.
A first via hole 51 is formed on the PCB body 1 between the outer copper layer 6 and the middle copper layer 12 to electrically connect the outer copper layer 6 and the middle copper layer 12.
Referring to fig. 6, the GaN power MOS transistor 20 has an input terminal (D pole), an output terminal (S pole) and a control terminal (G pole and SS pin).
A second via hole 52 is formed on the PCB body 1 between the input end of the GaN power MOS transistor 20 and the bottom aluminum layer 14, so as to electrically connect the input end of the GaN power MOS transistor 20 and the bottom aluminum layer 14.
A third via hole 53 is formed between the output end of the GaN power MOS transistor 20 and the middle copper layer 12 on the PCB body 1, so as to electrically connect the output end of the GaN power MOS transistor 20 and the middle copper layer 12.
The control end of the GaN power MOS transistor 20 and the routing of the digital control loop unit 3 are formed on the surface of the top surface layer 11, so as to electrically connect the control end of the GaN power MOS transistor 20 and the digital control loop unit 3. All GaN power MOS transistors 20 (G and SS pins) are connected in parallel with each other, running on said top surface layer 11. For simplicity, only two power driving traces of GaN are shown in FIG. 5.
The control terminal of the GaN power MOS transistor 20 is configured to receive the switch driving signal and selectively electrically connect or disconnect the bottom aluminum layer 14 and the middle copper layer 12 according to the switch driving signal.
In this embodiment, 50 GaN power MOS transistors 20 are selected to form a single power channel. The GaN power MOS tube 20 is GS61008P, 7.6mm long, 4.6mm wide and 100V/90A.
Due to the adoption of the compact design, the external dimension of the PCB body 1 can be controlled to be 100mm long and 50mm wide.
Considering that the height of the PCB board body 1 can be controlled within 20mm, the volume of the entire SSPC is comparable to that of the conventional 80A junction contactor (ELCC), that is, in this arrangement, the power density of the SSPC is increased by 3.5 times based on the original contactor scheme.
Calculating the power consumption of the GaN power MOS tube 20: since the overall flux was 350A, the current split per GaN was 7A. The on-resistance Rdson of GS61008P is 7 m Ω, so the steady state power consumption at 7A current is 0.343W. Due to the optimization of the packaging, the thermal resistance is reduced, and the temperature rise of the GaN power MOS tube 20 is only 0.2 ℃ at the power.
Referring to fig. 7 and 8, an application structure of a solid-state power controller for on-board 28VDC power distribution control is shown. And the solid-state power controller is configured in a primary distribution board box. The bottom aluminum layer 14 in the solid state power controller is in surface contact with one of the 28VDC bus bars 7. The outer copper layer 6 in the solid state power controller is in surface contact with another 28VDC bus bar 8. By means of the structure, the power can be transmitted, and the heat dissipation effect can be achieved. In principle, the solid state power controller is essentially a switch, replacing the contactor of fig. 1.
The foregoing merely represents embodiments of the invention, which are described in some detail and detail, and therefore should not be construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (5)

1. A solid state power controller for on-board 28VDC power distribution control, comprising,
the power channel unit is formed by a plurality of GaN power MOS tubes in parallel array.
2. The solid state power controller for on-board 28VDC power distribution control of claim 1, wherein said plurality of GaN power MOS transistors are disposed on a same plane.
3. The solid state power controller for on-board 28VDC power distribution control of claim 1 or 2, further comprising,
a PCB body;
a digital control loop unit; and the number of the first and second groups,
a communication connector unit;
and the digital control loop unit outputs a corresponding switch driving signal to the power channel unit according to an external control signal from the communication connector unit so as to control the power channel unit to work.
4. The solid state power controller for on-board 28VDC power distribution control of claim 3, wherein the PCB board body has a top surface layer, an intermediate copper layer, a prepreg layer, and a bottom aluminum layer in order from top to bottom, the bottom aluminum layer serving as a power input;
the top surface layer is divided into a surface layer front part and a surface layer rear part;
the power channel unit, the digital control loop unit and the communication connector unit are arranged on the front part of the surface layer;
an external copper layer is arranged on the rear part of the surface layer and is used as power output;
a first through hole is formed between the outer copper layer and the middle copper layer on the PCB body so as to realize the electric connection between the outer copper layer and the middle copper layer;
the GaN power MOS tube is provided with an input end, an output end and a control end;
a second through hole is formed between the input end of the GaN power MOS tube and the bottom aluminum layer on the PCB body so as to realize the electrical connection between the input end of the GaN power MOS tube and the bottom aluminum layer;
a third through hole is formed between the output end of the GaN power MOS tube and the middle copper layer on the PCB body so as to realize the electrical connection between the output end of the GaN power MOS tube and the middle copper layer;
a control end of the GaN power MOS tube and the wiring of the digital control loop unit are formed on the surface of the top surface layer, so that the control end of the GaN power MOS tube is electrically connected with the digital control loop unit;
the control end of the GaN power MOS tube is used for receiving the switch driving signal and selectively electrically connecting or disconnecting the bottom aluminum layer and the middle copper layer according to the switch driving signal.
5. The application structure of the solid-state power controller for on-board 28VDC power distribution control is characterized by comprising,
two 28VDC bus bars;
the solid state power controller of any one of claims 1 to 4, wherein the bottom aluminum layer interfaces with one of the 28VDC busses and the outer copper layer interfaces with the other 28VDC buss.
CN201910599773.9A 2019-07-04 2019-07-04 Solid-state power controller for on-board 28VDC power distribution control and application structure Pending CN112187239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910599773.9A CN112187239A (en) 2019-07-04 2019-07-04 Solid-state power controller for on-board 28VDC power distribution control and application structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910599773.9A CN112187239A (en) 2019-07-04 2019-07-04 Solid-state power controller for on-board 28VDC power distribution control and application structure

Publications (1)

Publication Number Publication Date
CN112187239A true CN112187239A (en) 2021-01-05

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ID=73915111

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910599773.9A Pending CN112187239A (en) 2019-07-04 2019-07-04 Solid-state power controller for on-board 28VDC power distribution control and application structure

Country Status (1)

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CN (1) CN112187239A (en)

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