CN102843862A - Circuit board structure and packaging structure for IGBT (insulated gate bipolar transistor) module - Google Patents
Circuit board structure and packaging structure for IGBT (insulated gate bipolar transistor) module Download PDFInfo
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- CN102843862A CN102843862A CN2012103233517A CN201210323351A CN102843862A CN 102843862 A CN102843862 A CN 102843862A CN 2012103233517 A CN2012103233517 A CN 2012103233517A CN 201210323351 A CN201210323351 A CN 201210323351A CN 102843862 A CN102843862 A CN 102843862A
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Abstract
The invention relates to a circuit board structure and packaging structure for an IGBT (insulated gate bipolar transistor) module. The circuit board structure of the IGBT module comprises a trunk, a plurality of electrode pins, an emitter lead wire and a gate lead wire; the electrode pins are arranged on one side of the trunk; the emitter lead wire and the gate lead wire are arranged on one side of the trunk and are parallel to each other. By leading out the gate and the emitting electrode of each IGBT submodule, the purpose of electrically controlling the IGBT module is achieved. Because the circuit board has the characteristics of simple structure and convenience of connection, the control electrodes of all subunits of the IGBT module can be integrated and led out easily, conveniently, accurately and precisely, and the led-out electrodes of the IGBT of the type can be electrically connected.
Description
Technical field
The present invention relates to IGBT (insulated gate bipolar transistor) devices field, specifically, is the board structure of circuit in a kind of IGBT module package technology.
Background technology
IGBT (insulated gate bipolar transistor) is the most representative product of the power electronic technology revolution for the second time of generally acknowledging in the world, is to have one of power device of advantage most in the present electric and electronic technical field.IGBT is a kind of MOS of having input, the MOS of bipolar output function, the bipolar device that combines.On the structure, it is made up of thousands of repetitives (being cellular), is a kind of a kind of high-power integrated device that adopts large scale integrated circuit technology and power device technology to make.IGBT is widely used in electrical machine energy-saving, metallurgy, new forms of energy, power transmission and transformation, automotive electronics, track traffic, and each field of national economy such as household electrical appliance is one of indispensable key technology of China Reconstructs's resource-conserving and friendly environment society.IGBT succeeded in developing at the beginning of the eighties in last century, and its performance is applied to the high-power field of medium-high frequency maturely through twenties years improving constantly and improving.In the characteristics that it is little with voltage control, the power controlling of MOSFET, be easy to parallel connection, switching speed is high and the feature set that current density is big, current handling capability strong, saturation pressure reduces of bipolar transistor, show be prone to drive, superior combination properties such as low on-state is kept a situation well under one's control, very fast switching speed, high withstand voltage, big electric current, high-frequency.The present voltage range of IGBT device has diffused into 300 to 6500 volts, and current range has diffused into several amperes to the hundreds of ampere, and frequency range has diffused into hundreds of hertz to tens kilo hertz.It is the multicore sheet power model on basis or traditional discrete power device package form that igbt chip adopts the hybrid package technology according to the electric current range of application.
Traditional I GBT module is owing to adopted the packaged type of the multicore sheet parallel connection of aluminum lead and ceramic copper-clad substrate; Can only lean on the heat radiation of bottom ceramic substrate, its heat dispersion, heat-resistant impact ability, conducting current capacity and reliability all are lower than the thyristor (GTO) or the integrated gate commutated thyristor (IGCT) of equal electric pressure.These drawbacks limit of IGBT its application in large-capacity power electronically commutated system.
In recent years; Minority IGBT manufacturer also attempts having adopted the IGBT encapsulation of two-sided heat radiation press contact (pressing type); But owing to still receive the structural limitations of IGBT multicore sheet parallel connection, the control utmost point between each sub-cells is drawn problem such as have complex structure, manufacture difficulty is big and precision is low.
Therefore be necessary the electrode deriving structure in the IGBT module to be done improvement to the problem that exists in the prior art.
Summary of the invention
In view of this, the objective of the invention is to propose a kind of board structure of circuit of IGBT module, the control electrode that is used between each sub-cells of IGBT module is drawn.This board structure of circuit can solve the problem that electrode in the IGBT module package technology exists in drawing; Thereby make the IGBT module can be simply, convenient, accurate, high-precision each sub-cells control utmost point integrated, drawn, accomplish being electrically connected of extraction pole of this model IGBT module.The IGBT module encapsulation construction that the present invention simultaneously also proposes to have the foregoing circuit plate structure.
The board structure of circuit of a kind of IGBT module that proposes according to the object of the invention; Comprise insulated substrate, be positioned at the first positive conductive layer of this insulated substrate and be positioned at second conductive layer at this insulated substrate back side; Said board structure of circuit comprises trunk, is positioned at a plurality of electrode pins of this trunk second conductive layer side; And the emitter lead-out wire and the grid lead wire that are parallel to each other that are positioned at this master's second conductive layer side; Said first conductive layer covers this emitter lead-out wire and part trunk at least, the said covering of second conductive layer this grid lead wire, electrode pin and trunk.
Preferably, between any edge of said first conductive layer and second conductive layer and said insulated substrate at a distance of 0.5mm-1mm.
Preferably, the thickness of said first conductive layer and second conductive layer is 0.05mm.
Preferably, the minimum widith of said first conductive layer and second conductive layer is 2mm-6mm.
Preferably, the end of said emitter lead-out wire and grid lead wire is provided with contact electrode.
While is according to the encapsulating structure of a kind of IGBT module of another object of the present invention proposition; The IGBT submodule, metal base plate, the metal top plate that comprise a plurality of parallel connections; And aforesaid circuit board, said metal base plate connects the collector electrode of all IGBT submodules, the corresponding grid that connects these a plurality of IGBT submodules of a plurality of electrode pins of said circuit board; Said metal top plate connects the emitter of all IGBT submodules, this metal top plate simultaneously again with circuit board in first conductive layer contact.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the schematic perspective view of board structure of circuit of the present invention,
Fig. 2 is the front view of the board structure of circuit among Fig. 1,
Fig. 3 is the rearview of this board structure of circuit,
Fig. 4 is the cutaway view of AA face among Fig. 3,
Fig. 5 is the internal structure sketch map of IGBT package module of the present invention,
Fig. 6 is the overall appearance figure of IGBT module of the present invention,
Fig. 7 is a circuit board and the sketch map that is electrically connected of IGBT submodule.
Embodiment
Described in background technology, in the existing IGBT module package technology, how to realize that it is an outstanding question that simple and effective control electrode is drawn always.The present invention is directed to this problem, proposed a kind of board structure of circuit in IGBT module package technology,, can the control electrode on each sub-module in the IGBT module be drawn easily through this circuit board.Especially in dull and stereotyped pressing type packaging technology, the grid and the emitter of the IGBT submodule that each is parallelly connected can pass through board structure of circuit of the present invention, are drawn out to control end accurately, thereby realize the effective electric control to entire I GBT module.
To carry out clear, intactly description to technical scheme of the present invention through embodiment below.Obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
See also Fig. 1 to Fig. 4, Fig. 1 is the schematic perspective view of board structure of circuit of the present invention, and Fig. 2 is the front view of the board structure of circuit among Fig. 1, and Fig. 3 is the rearview of this board structure of circuit, and Fig. 4 is the cutaway view of AA face among Fig. 3.As shown in the figure, this board structure of circuit 1 comprises insulated substrate 20, be positioned at the first positive conductive layer 21 of this insulated substrate and be positioned at second conductive layer 22 at this insulated substrate back side.The material of insulated substrate 20 is a FR series, such as: paper phenolic resin substrate (PP plate), glass cloth surface+cotton paper+epoxy resin (CEM-1), glass cloth surface+adhesive-bonded fabric+epoxy resin (CEM-2), glass cloth+epoxy resin (FR-4) etc.First conductive layer 21 and second conductive layer 22 can be produced on the positive and negative of insulated substrate 20 through methods such as chemical turmeric, spray tin, justifying nickel plating gold, the blue glue of silk-screen.
Please again referring to Fig. 1, this board structure of circuit 1 comprises trunk 10, is positioned at a plurality of electrode pins 11 of these trunk both sides, and the emitter lead-out wire that is parallel to each other 12 and grid lead wire 13 that are positioned at this trunk one side.Trunk 10 be shaped as strip, electrode pin 11 is distributed in the both sides of strip trunk 10, the body shape of entire circuit plate is looked look like centipede shape.The quantity of the submodule in the quantity of these electrode pins 11 and the distributed entire I GBT module and deciding; Its effect be exactly with each sub-module in grid electric connection; And through grid lead wire 13; Be connected on the outside signal of telecommunication input unit, thereby the signal of telecommunication of outside output is input in each IGBT submodule, realize electric control.Emitter lead-out wire 12 is respectively equipped with contact electrode 121,131 with grid lead wire 13; The effect of this contact electrode is to be connected with the signal of telecommunication input unit of outside; Usually after entire I GBT module was accomplished encapsulation, the form with jack or plug occurred these two electrodes in the outside that encapsulates.
See also Fig. 2; First conductive layer 21 covers these emitter lead-out wires 12 and part trunk 10 at least; For first conductive layer 21, its effect mainly be with entire I GBT module package in metal top plate is connected and usefulness, owing to the emitter of each IGBT submodule all contacts with this metal roof flaggy; Therefore on the actual emitter that is connected all submodules of this first conductive layer 21, and be connected on the outside signal of telecommunication input unit through emitter lead-out wire 12.Consider the reliability that electrically contacts, so this first conductive layer can be produced on whole fronts of insulating pad 10, guarantee like this to contact with the effective of metal roof flaggy.But consider from the material cost angle, only need to cover emitter lead-out wire 12 and get final product with the zone that part trunk 10 at least belongs to.More excellent ground, in the embodiment shown in Figure 2, this first conductive layer 21 has covered on whole trunk 10, electrode pin 11 and the emitter lead-out wire 12, and in the front of grid lead wire 13, does not then cover.So both guaranteed to contact, and can avoid simultaneously on grid lead wire 13 second conductive layer with the back side to form again and puncture with the effective of metal top plate.
Please again referring to Fig. 3, second conductive layer 22 covers this grid lead wire 13, electrode pin 11 and trunk 10.The effect of second conductive layer 22 is that the grid of each IGBT submodule is communicated with through the signal of telecommunication input unit of grid lead wire 13 with the outside.Therefore second conductive layer 22 covers all or part of of each electrode pin 11, trunk 10, and grid lead wire 13, guarantees that the grid of each IGBT submodule can both keep being electrically connected.Preferably, for fear of and emitter between electrical breakdown, then need not cover second conductive layer 22 at the back side of emitter lead-out wire 12.
Please again referring to Fig. 4, for first conductive layer 21 and second conductive layer 22, for fear of electrical breakdown, any one near insulated substrate 10 edges, all to reserve certain spacing distance d.This spacer segment apart from the d stroke electricity between the two conductive layers end the zone.In preferred embodiment, the scope of this spacing distance d is 0.5mm-1mm.The minimum widith of first conductive layer 21 and second conductive layer 22 has influenced the conductive capability of conductive layer.The definition of this minimum widith is meant in all zones that cover conductive layers, the distance between two parallel edges that adjoin each other.Such as in electrode pin 11 or emitter lead-out wire 12 or grid lead wire 13; Because trunk 10 these trizonal areas are relatively narrow relatively, therefore the minimum widith of first conductive layer 21 and second conductive layer 22 often is created on the narrow limit of these pins or lead-out wire.Usually the minimum widith of conductive layer is mainly by adhesion strength between conductive layer and insulated substrate and the current value decision of flowing through them.When conductive layer thickness be 0.05mm, when width is 1-15mm.Through the electric current of 2A, temperature can not be higher than 3 ℃, and therefore, the conductive layer width is that 1.5mm can meet the demands, as long as allow, still uses wide line as far as possible, and the preferred circuit board conductive layer of the present invention width is 2mm-6mm, meets the demands fully.
See also Fig. 5 to Fig. 7, Fig. 5 is the internal structure sketch map of IGBT package module of the present invention, and Fig. 6 is the overall appearance figure of IGBT module of the present invention, and Fig. 7 is a circuit board and the sketch map that is electrically connected of IGBT submodule.As shown in the figure, this IGBT package module comprises the IGBT submodule 2 of circuit board 1, a plurality of parallel connections, metal base plate 3 and metal top plate 4.Each IGBT inside comprises a plurality of IGBT devices, and the emitter of these devices, grid and collector electrode are connected to together and form a complete chip through semiconductor technology.
When encapsulation, each IGBT submodule is welded on the metal base plate 3, and the collector electrode of all IGBT submodules is connected with metal base plate 3, forms total collector electrode 31.The emitter of each IGBT submodule then contacts with metal top plate 4; This metal top plate 4 simultaneously again with circuit board 1 in first conductive layer 21 contact, all emitters are connected on the emitter control interface 32 in the package module appearance through emitter lead-out wire 12.
The quantity of IGBT submodule 2 is corresponding with the quantity of circuit board electrode pin 11, and each IGBT submodule is divided into the both sides of circuit board trunk 10, and its gate location is the position of counter electrode pin 11 simultaneously.As shown in Figure 7, the grid 23 of each IGBT submodule 2 is connected on second conductive layer 21 at electrode pin 11 back sides through connecting pin 24, and is connected on the grid control interface 33 in the package module appearance through grid lead wire 13.
Through the encapsulation of shell, form IGBT potted element as shown in Figure 6 at last with the complete entire I GBT module of insulation glue.Outside signal of telecommunication input unit, the joint that only needs to be loaded with emitter control signal and grid control signal is connected respectively on above-mentioned emitter control interface 32 and the grid control interface 33, just can realize the electric control of above-mentioned IGBT potted element.
In sum, the present invention proposes the board structure of circuit in a kind of IGBT module package technology, this circuit board reaches the purpose that realizes the electric control of IGBT module through to the grid of each IGBT submodule and drawing of emitter.Because this circuit board itself has characteristics simple in structure, easy to connect, make the IGBT module can be simply, conveniently, accurate, high-precision each sub-cells is controlled utmost point integrate, draw, accomplish being electrically connected of extraction pole of this model IGBT module.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (6)
1. the board structure of circuit of an IGBT module; Comprise insulated substrate, be positioned at the first positive conductive layer of this insulated substrate and be positioned at second conductive layer at this insulated substrate back side; It is characterized in that: said board structure of circuit comprises trunk, is positioned at a plurality of electrode pins of these trunk both sides; And the emitter lead-out wire and the grid lead wire that are parallel to each other that are positioned at this trunk one side; Said first conductive layer covers this emitter lead-out wire and trunk, and said second conductive layer covers this grid lead wire, electrode pin and trunk.
2. board structure of circuit as claimed in claim 1 is characterized in that: between any edge of said first conductive layer and second conductive layer and said insulated substrate at a distance of 0.5mm-1mm.
3. board structure of circuit as claimed in claim 1 is characterized in that: the thickness of said first conductive layer and second conductive layer is 0.05mm.
4. board structure of circuit as claimed in claim 1 is characterized in that: the minimum widith of said first conductive layer and second conductive layer is 2mm-6mm.
5. board structure of circuit as claimed in claim 1 is characterized in that: the end of said emitter lead-out wire and grid lead wire is provided with contact electrode.
6. the encapsulating structure of an IGBT module; It is characterized in that: the IGBT submodule, metal base plate, the metal top plate that comprise a plurality of parallel connections; And circuit board as claimed in claim 1, said metal base plate connects the collector electrode of all IGBT submodules, the corresponding grid that connects these a plurality of IGBT submodules of a plurality of electrode pins of said circuit board; Said metal top plate connects the emitter of all IGBT submodules, this metal top plate simultaneously again with circuit board in first conductive layer contact.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210323351.7A CN102843862B (en) | 2012-09-04 | 2012-09-04 | Circuit board structure and packaging structure for IGBT (insulated gate bipolar transistor) module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210323351.7A CN102843862B (en) | 2012-09-04 | 2012-09-04 | Circuit board structure and packaging structure for IGBT (insulated gate bipolar transistor) module |
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| CN102843862A true CN102843862A (en) | 2012-12-26 |
| CN102843862B CN102843862B (en) | 2015-03-25 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103367305A (en) * | 2013-07-31 | 2013-10-23 | 西安永电电气有限责任公司 | Electric connection structure of IGBT (Insulated Gate Bipolar Transistor) device |
| CN104867891A (en) * | 2014-02-26 | 2015-08-26 | 西安永电电气有限责任公司 | Double-layer conductive film electrical connecting structure for IGBT device |
| CN106298737A (en) * | 2015-06-01 | 2017-01-04 | 台达电子工业股份有限公司 | Power module package structure and manufacture method thereof |
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| WO2004008532A2 (en) * | 2002-07-15 | 2004-01-22 | International Rectifier Corporation | High power mcm package |
| CN1731917A (en) * | 2005-09-06 | 2006-02-08 | 威盛电子股份有限公司 | Print circuit board with improved heat rejection structure and electronic device |
| CN101022099A (en) * | 2007-03-16 | 2007-08-22 | 华为技术有限公司 | Thick film circuit, pin frame, circuit board and assembly thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367305A (en) * | 2013-07-31 | 2013-10-23 | 西安永电电气有限责任公司 | Electric connection structure of IGBT (Insulated Gate Bipolar Transistor) device |
| CN104867891A (en) * | 2014-02-26 | 2015-08-26 | 西安永电电气有限责任公司 | Double-layer conductive film electrical connecting structure for IGBT device |
| CN106298737A (en) * | 2015-06-01 | 2017-01-04 | 台达电子工业股份有限公司 | Power module package structure and manufacture method thereof |
| CN106298737B (en) * | 2015-06-01 | 2018-10-09 | 台达电子工业股份有限公司 | Power module package structure and its manufacturing method |
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| CN102843862B (en) | 2015-03-25 |
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Address after: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee after: Xi'an Zhongche Yongji Electric Co. Ltd. Address before: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee before: Xi'an Yongdian Electric Co., Ltd. |
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