CN205140973U - Power module - Google Patents
Power module Download PDFInfo
- Publication number
- CN205140973U CN205140973U CN201520940395.3U CN201520940395U CN205140973U CN 205140973 U CN205140973 U CN 205140973U CN 201520940395 U CN201520940395 U CN 201520940395U CN 205140973 U CN205140973 U CN 205140973U
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- brachium pontis
- power switch
- electrode
- copper
- layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Power Conversion In General (AREA)
Abstract
The utility model discloses a power module, including bottom plate, positive electrode, negative electrode, output electrode and the insulation substrate of setting on the bottom plate, all be equipped with the insulating layer between positive electrode, negative electrode and output electrode and the bottom plate, insulation substrate includes a heat -conduction insulation layer and formed at the first copper layer and the end copper layer of heat -conduction insulation layer both sides, is equipped with bridge arm chip unit on the first copper layer, first copper layer is equipped with the district of just working a telephone switchboard in the one end of being close to the positive electrode, and first copper layer is equipped with the 2nd heat -conduction insulation layer between just work a telephone switchboard district and last bridge arm chip unit, be equipped with second copper layer on the 2nd heat -conduction insulation layer, is equipped with down bridge arm chip unit on the second copper layer, and one end that the 2nd heat -conduction insulation layer is close to the negative electrode is equipped with that it works a telephone switchboard to bear distinguishes. The utility model discloses an increase copper layer and insulating layer and change current path, adopt electric current layering form, reduced afterflow return circuit area and stray inductance.
Description
Technical field
The utility model relates to field of power electronics, is specifically related to a kind of power model.
Background technology
Power model is that power electronic electrical device is as metal-oxide-semiconductor (metal-oxide semiconductor (MOS)), IGBT (insulated-gate type field effect transistor), the power switch module that FRD (fast recovery diode) is combined and packaged into by certain function, it is mainly used in electric automobile, photovoltaic generation, wind power generation, the power transfer under the various occasion such as industrial frequency conversion.
But repeatedly switched along with the power switch in module, the inductance produced by its structural allocation can reduce the reliability of power model.Traditional power model due to continuous current circuit area comparatively large, under causing big current situation, the continuous current circuit inductance of module is very large, and make the switching loss of module large, reliability is low.
Utility model content
Utility model object: for the problems referred to above, the utility model aims to provide the power model that a kind of stray inductance is low, switching loss is little, reliability is high.
Technical scheme: a kind of power model, comprise base plate, positive electrode, negative electrode, output electrode and the insulated substrate be arranged on base plate, positive electrode, negative electrode and be equipped with insulating barrier between output electrode and base plate, insulated substrate comprises the first thermally conductive insulating layer and is formed at the first layers of copper and the end layers of copper of the first thermally conductive insulating layer both sides, first layers of copper is provided with brachium pontis chip unit, described first layers of copper is provided with positive Wiring area in the one end near positive electrode, first layers of copper is provided with the second thermally conductive insulating layer between positive Wiring area and upper brachium pontis chip unit, second thermally conductive insulating layer is provided with the second layers of copper, second layers of copper is provided with lower brachium pontis chip unit, second thermally conductive insulating layer is provided with negative Wiring area near one end of negative electrode, the operating current flowed out by positive electrode flows into upper brachium pontis chip unit by the first layers of copper, finally flow to output electrode, the freewheel current flowed out by negative electrode flows into lower brachium pontis chip unit by negative Wiring area, then flow to output electrode by the second layers of copper.
Further, described positive electrode and the direction superimposed layer that negative electrode is being parallel to base plate are arranged, and are also provided with insulating barrier between positive electrode and negative electrode.
Further, described positive electrode is connected with positive Wiring area, and described negative electrode is connected with negative Wiring area.
Further, described upper brachium pontis chip unit comprises the upper brachium pontis chipset of multiple parallel connection, and described upper brachium pontis chipset comprises the upper brachium pontis power switch and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, and lower brachium pontis chipset comprises the lower brachium pontis power switch and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch and the parallel connection of lower brachium pontis internal body diodes; The freewheel current flowed out by negative electrode flows through the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes, then transfers to output electrode through the second layers of copper.
Further, described upper brachium pontis chip unit comprises the upper brachium pontis chipset of multiple parallel connection, described upper brachium pontis chipset comprises brachium pontis power switch and upper brachium pontis external diode in parallel with it, lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, and lower brachium pontis chipset comprises lower brachium pontis power switch and lower brachium pontis external diode in parallel with it; The freewheel current flowed out by negative electrode flow through the positive pole of lower brachium pontis external diode, lower brachium pontis external diode negative pole, then transfer to output electrode through the second layers of copper.
Further, described upper brachium pontis chip unit comprises the upper brachium pontis chipset of multiple parallel connection, described upper brachium pontis chipset comprises upper brachium pontis power switch in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, lower brachium pontis chipset comprises lower brachium pontis power switch in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch and lower brachium pontis internal body diodes are integrated in one; The freewheel current flowed out by negative electrode flow through the positive pole of lower brachium pontis internal body diodes and the positive pole of lower brachium pontis external diode, the negative pole of lower brachium pontis internal body diodes and lower brachium pontis external diode negative pole, then transfer to output electrode through the second layers of copper.
Further, described upper brachium pontis power switch and lower brachium pontis power switch are metal-oxide-semiconductor, and the operating current flowed out by positive electrode flows through the drain electrode of the first layers of copper and upper brachium pontis power switch, and the source electrode then through upper brachium pontis power switch transfers to output electrode.
Further, described upper brachium pontis power switch and lower brachium pontis power switch are IGBT, and the operating current that positive electrode flows out flows through the collector electrode of the first layers of copper and upper brachium pontis power switch, and the emitter then through upper brachium pontis power switch transfers to output electrode.
Further, described upper brachium pontis power switch is metal-oxide-semiconductor, and lower brachium pontis power switch is IGBT, and the operating current flowed out by positive electrode flows through the drain electrode of the first layers of copper and upper brachium pontis power switch, and the source electrode then through upper brachium pontis power switch transfers to output electrode.
Further, described upper brachium pontis power switch is IGBT, and lower brachium pontis power switch is metal-oxide-semiconductor, and the operating current that positive electrode flows out flows through the collector electrode of the first layers of copper and upper brachium pontis power switch, and the emitter then through upper brachium pontis power switch transfers to output electrode.
Beneficial effect: the utility model changes current path by the mode increasing layers of copper and insulating barrier.Compare the single-pathway form of the operating current that existing module positive electrode flows out, have employed electric current stratified form, the operating current that positive electrode flows out flows through the first layers of copper, the freewheel current that negative electrode flows out flows through the second layers of copper, both paths are only spaced the thickness of second thermally conductive insulating layer, reduce continuous current circuit area, increase the conveyance capacity of power model, there is less stray inductance and switching loss.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is current diagram of the present utility model;
Fig. 3 (a), 3 (b) circuit diagram of the present utility model;
Fig. 4 is three-dimensional structure diagram of the present utility model.
Embodiment
As shown in Figure 1, a kind of power model, comprise base plate 1, positive electrode 2, negative electrode 3, output electrode 4 and the insulated substrate be arranged on base plate 1, positive electrode 2, negative electrode 3 and be equipped with insulating barrier between output electrode 4 and base plate 1, this insulating barrier and the insulation crust shown in Fig. 4 15 in the present embodiment, insulated substrate comprises the first thermally conductive insulating layer and is formed at the first layers of copper 5 and the end layers of copper of the first thermally conductive insulating layer both sides, first layers of copper 5 is provided with brachium pontis chip unit, first layers of copper 5 is provided with positive Wiring area 6 in the one end near positive electrode 2, first layers of copper 5 is provided with the second thermally conductive insulating layer 7 between positive Wiring area 6 and upper brachium pontis chip unit, second thermally conductive insulating layer 7 is provided with the second layers of copper 8, second layers of copper 8 is provided with lower brachium pontis chip unit, second layers of copper 8 is provided with negative Wiring area 9 near one end of negative electrode 3.
As shown in Figure 2, in the present embodiment, upper brachium pontis chip unit comprises 5 upper brachium pontis chipsets in parallel, and lower brachium pontis chip unit comprises 5 lower brachium pontis chipsets in parallel.
Upper brachium pontis chipset comprises brachium pontis power switch 10 and upper brachium pontis external diode in parallel with it, and lower brachium pontis chipset comprises lower brachium pontis power switch 11 and lower brachium pontis external diode in parallel with it; The freewheel current 31 flowed out by negative electrode 3 flow through the positive pole of lower brachium pontis external diode, lower brachium pontis external diode negative pole, then transfer to output electrode 4 through the second layers of copper 8.
The structure of upper brachium pontis chipset and lower brachium pontis chipset can also be: described upper brachium pontis chipset comprises the upper brachium pontis power switch 10 and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch 10 and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, and lower brachium pontis chipset comprises the lower brachium pontis power switch 11 and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch 11 and the parallel connection of lower brachium pontis internal body diodes; The freewheel current 31 flowed out by negative electrode 3 flows through the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes, then transfers to output electrode 4 through the second layers of copper 8.
Upper brachium pontis chipset with the structure of lower brachium pontis chipset can also be: described upper brachium pontis chipset comprises upper brachium pontis power switch 10 in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch 10 and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, lower brachium pontis chipset comprises lower brachium pontis power switch 11 in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch 11 and lower brachium pontis internal body diodes are integrated in one; The freewheel current 31 flowed out by negative electrode 3 flows through the positive pole of the positive pole of lower brachium pontis internal body diodes and lower brachium pontis external diode, the negative pole of lower brachium pontis internal body diodes and the negative pole of brachium pontis external diode, then transfers to output electrode 4 through the second layers of copper 8.
Upper brachium pontis power switch 10 and lower brachium pontis power switch 11 can be metal-oxide-semiconductor, also can be IGBT (insulated-gate type field effect transistor): when upper brachium pontis power switch 10 and lower brachium pontis power switch 11 are metal-oxide-semiconductor, its circuit diagram is as shown in Fig. 3 (a).The operating current 21 flowed out by positive electrode 2 flows through the drain electrode of the first layers of copper 5 and upper brachium pontis power switch 10, and the source electrode then through upper brachium pontis power switch 10 transfers to output electrode 4.
When upper brachium pontis power switch 10 and lower brachium pontis power switch 11 are IGBT, its circuit diagram is as shown in Fig. 3 (b).The operating current 21 that positive electrode 2 flows out flows through the collector electrode of the first layers of copper 5 and upper brachium pontis power switch 10, and the emitter then through upper brachium pontis power switch 10 transfers to output electrode 4.When upper brachium pontis power switch 10 is metal-oxide-semiconductor, when lower brachium pontis power switch 11 is IGBT, the operating current 21 flowed out by positive electrode 2 flows through the drain electrode of the first layers of copper 5 and upper brachium pontis power switch 10, and the source electrode then through upper brachium pontis power switch 10 transfers to output electrode 4.
When upper brachium pontis power switch 10 is IGBT, when lower brachium pontis power switch 11 is metal-oxide-semiconductor, the operating current 21 flowed out by positive electrode 2 flows through the collector electrode of the first layers of copper 5 and upper brachium pontis power switch 10, and the emitter then through upper brachium pontis power switch 10 transfers to output electrode 4.
In order to the layers of copper structure on coordinated insulation substrate, while reduction continuous current circuit area, simplify circuit wiring pattern, the utility model embodiment need make corresponding improvement to structure, as shown in Figure 4:
Described positive electrode 2 is arranged with the direction superimposed layer that negative electrode 3 is being parallel to base plate 1, and is also provided with insulating barrier between positive electrode 2 and negative electrode 3.This insulating barrier and the insulation crust shown in Fig. 4 15 in the present embodiment.
Described positive electrode 2 is connected with positive Wiring area 6, and described negative electrode 3 is connected with negative Wiring area 9.
As shown in Figure 2, the operating current flowed out by positive electrode 2 flows into upper brachium pontis chip unit by the first layers of copper 5, finally flow to output electrode; The freewheel current 31 flowed out by negative electrode 3 flows into lower brachium pontis chip unit by negative Wiring area 9, then flow to output electrode 4 by the second layers of copper 8.
Above brachium pontis power switch 10 and lower brachium pontis power switch 11 are metal-oxide-semiconductor and are integrated with the situation being integrated with lower brachium pontis internal body diodes in brachium pontis internal body diodes, lower brachium pontis power switch 11 in upper brachium pontis power switch 10 is below example, introduce the process of power model work of the present utility model and afterflow, alleged nation alignment is all translations of English bonding below:
During work, the grid of upper brachium pontis power switch accepts control signal and connects, operating current 21 flows out from positive electrode 2, positive Wiring area 6 is flowed into through positive pole nation alignment, the drain electrode of upper brachium pontis power switch in upper brachium pontis chip unit is flowed into by the first layers of copper 5, then flowed out by the source electrode of brachium pontis power switch upper in upper brachium pontis power chip group, flow to upper brachium pontis source electrode layers of copper 51 by upper brachium pontis nation alignment 12, finally flow out to output electrode 4.
During afterflow, freewheel current 31 flows out from negative electrode 3, negative Wiring area 9 is flowed into through negative pole nation alignment 13, then five tunnels are split into, the positive pole of five lower brachium pontis internal body diodes is flowed into respectively through lower brachium pontis nation alignment 14, then flow out to the second layers of copper 8 from the negative pole of five lower brachium pontis internal body diodes respectively, then flow to upper brachium pontis source electrode layers of copper 51 through upper brachium pontis nation alignment 12, finally flow out to output electrode 4.
More than adopt nation's alignment each electrode, each layers of copper and each power chip unit to be directly communicated with, effectively simplify circuit structure, reduce cost.In addition, the mode of ultrasonic bonding also can be adopted each electrode, each layers of copper and each power chip unit to be directly communicated with.
The utility model changes current path by the mode increasing layers of copper and insulating barrier, and power model is provided with the second layers of copper 8, second thermally conductive insulating layer 7, first layers of copper 5, first thermally conductive insulating layer and end layers of copper from top to bottom successively.The utility model adopts electric current stratified form, the operating current that positive electrode 2 flows out flows through the first layers of copper 5, the freewheel current that negative electrode 3 flows out flows through the second layers of copper 8, both paths are only spaced the thickness of second thermally conductive insulating layer 7, reduce continuous current circuit area, increase the conveyance capacity of power model, there is less stray inductance and switching loss.
Claims (10)
1. a power model, comprise base plate (1), positive electrode (2), negative electrode (3), output electrode (4) and the insulated substrate be arranged on base plate (1), positive electrode (2), negative electrode (3) and be equipped with insulating barrier between output electrode (4) and base plate (1), insulated substrate comprises the first thermally conductive insulating layer and is formed at the first layers of copper (5) and the end layers of copper of the first thermally conductive insulating layer both sides, first layers of copper (5) is provided with brachium pontis chip unit, it is characterized in that: described first layers of copper (5) is provided with positive Wiring area (6) in the one end near positive electrode (2), first layers of copper (5) is provided with the second thermally conductive insulating layer (7) between positive Wiring area (6) and upper brachium pontis chip unit, second thermally conductive insulating layer (7) is provided with the second layers of copper (8), second layers of copper (8) is provided with lower brachium pontis chip unit, second thermally conductive insulating layer (7) is provided with negative Wiring area (9) near one end of negative electrode, the operating current (21) flowed out by positive electrode (2), by brachium pontis chip unit in the first layers of copper (5) inflow, finally flow to output electrode (4), the freewheel current (31) flowed out by negative electrode (3) flows into lower brachium pontis chip unit by negative Wiring area (9), then flow to output electrode (4) by the second layers of copper (8).
2. a kind of power model according to claim 1, it is characterized in that: described positive electrode (2) and the direction superimposed layer that negative electrode (3) is being parallel to base plate (1) are arranged, and are also provided with insulating barrier between positive electrode (2) and negative electrode (3).
3. a kind of power model according to claim 2, is characterized in that: described positive electrode (2) is connected with positive Wiring area (6), and described negative electrode (3) is connected with negative Wiring area (9).
4. a kind of power model according to claim 1, it is characterized in that: described upper brachium pontis chip unit comprises the upper brachium pontis chipset of multiple parallel connection, described upper brachium pontis chipset comprises the upper brachium pontis power switch (10) and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch (10) and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, lower brachium pontis chipset comprises the lower brachium pontis power switch (11) and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch (11) and the parallel connection of lower brachium pontis internal body diodes; The freewheel current (31) flowed out by negative electrode (3) flows through the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes, then transfers to output electrode (4) through the second layers of copper (8).
5. a kind of power model according to claim 1, it is characterized in that: described upper brachium pontis chip unit comprises the upper brachium pontis chipset of multiple parallel connection, described upper brachium pontis chipset comprises brachium pontis power switch (10) and upper brachium pontis external diode in parallel with it, lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, and lower brachium pontis chipset comprises lower brachium pontis power switch (11) and lower brachium pontis external diode in parallel with it; The freewheel current (31) flowed out by negative electrode (3) flow through the positive pole of lower brachium pontis external diode, lower brachium pontis external diode negative pole, then transfer to output electrode (4) through the second layers of copper (8).
6. a kind of power model according to claim 1, it is characterized in that: described upper brachium pontis chip unit comprises the upper brachium pontis chipset of multiple parallel connection, described upper brachium pontis chipset comprises upper brachium pontis power switch (10) in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch (10) and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis chip unit comprises the lower brachium pontis chipset of multiple parallel connection, lower brachium pontis chipset comprises lower brachium pontis power switch (11) in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch (11) and lower brachium pontis internal body diodes are integrated in one; The freewheel current (31) flowed out by negative electrode (3) flow through the positive pole of lower brachium pontis internal body diodes and the positive pole of lower brachium pontis external diode, the negative pole of lower brachium pontis internal body diodes and lower brachium pontis external diode negative pole, then transfer to output electrode (4) through the second layers of copper (8).
7. according to a kind of power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch (10) and lower brachium pontis power switch (11) are metal-oxide-semiconductor, the operating current (21) flowed out by positive electrode (2) flows through the drain electrode of the first layers of copper (5) and upper brachium pontis power switch (10), and the source electrode then through upper brachium pontis power switch (10) transfers to output electrode (4).
8. according to a kind of power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch (10) and lower brachium pontis power switch (11) are IGBT, the operating current (21) that positive electrode (2) flows out flows through the collector electrode of the first layers of copper (5) and upper brachium pontis power switch (10), and the emitter then through upper brachium pontis power switch (10) transfers to output electrode (4).
9. according to a kind of power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch (10) is metal-oxide-semiconductor, lower brachium pontis power switch (11) is IGBT, the operating current (21) flowed out by positive electrode (2) flows through the drain electrode of the first layers of copper (5) and upper brachium pontis power switch (10), and the source electrode then through upper brachium pontis power switch (10) transfers to output electrode (4).
10. according to a kind of power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch (10) is IGBT, lower brachium pontis power switch (11) is metal-oxide-semiconductor, the operating current (21) that positive electrode (2) flows out flows through the collector electrode of the first layers of copper (5) and upper brachium pontis power switch (10), and the emitter then through upper brachium pontis power switch (10) transfers to output electrode (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520940395.3U CN205140973U (en) | 2015-11-23 | 2015-11-23 | Power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520940395.3U CN205140973U (en) | 2015-11-23 | 2015-11-23 | Power module |
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| Publication Number | Publication Date |
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| CN205140973U true CN205140973U (en) | 2016-04-06 |
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| CN201520940395.3U Active CN205140973U (en) | 2015-11-23 | 2015-11-23 | Power module |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107742985A (en) * | 2017-10-26 | 2018-02-27 | 广东美的厨房电器制造有限公司 | For forming the layout method and structure of full-bridge circuit on pcb board |
| CN107785349A (en) * | 2016-08-26 | 2018-03-09 | 台达电子企业管理（上海）有限公司 | Power chip |
| CN108512440A (en) * | 2018-05-04 | 2018-09-07 | 北京金风科创风电设备有限公司 | Current conversion device and bipolar current conversion system |
| CN109360818A (en) * | 2018-11-05 | 2019-02-19 | 深圳市慧成功率电子有限公司 | The power module of input electrode symmetric part of matrix setting |
| CN111106098A (en) * | 2019-12-13 | 2020-05-05 | 扬州国扬电子有限公司 | Power module with low parasitic inductance layout |
| CN112510000A (en) * | 2020-11-17 | 2021-03-16 | 扬州国扬电子有限公司 | Power module with low parasitic inductance of driving loop |
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2015
- 2015-11-23 CN CN201520940395.3U patent/CN205140973U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107785349A (en) * | 2016-08-26 | 2018-03-09 | 台达电子企业管理（上海）有限公司 | Power chip |
| US10871811B2 (en) | 2016-08-26 | 2020-12-22 | Delta Electronics (Shanghai) Co., Ltd | Power chip |
| CN107742985A (en) * | 2017-10-26 | 2018-02-27 | 广东美的厨房电器制造有限公司 | For forming the layout method and structure of full-bridge circuit on pcb board |
| CN108512440A (en) * | 2018-05-04 | 2018-09-07 | 北京金风科创风电设备有限公司 | Current conversion device and bipolar current conversion system |
| CN109360818A (en) * | 2018-11-05 | 2019-02-19 | 深圳市慧成功率电子有限公司 | The power module of input electrode symmetric part of matrix setting |
| CN109360818B (en) * | 2018-11-05 | 2024-01-12 | 深圳市奕通功率电子有限公司 | Power module with symmetrical branch arrangement of input electrodes |
| CN111106098A (en) * | 2019-12-13 | 2020-05-05 | 扬州国扬电子有限公司 | Power module with low parasitic inductance layout |
| CN111106098B (en) * | 2019-12-13 | 2021-10-22 | 扬州国扬电子有限公司 | Power module with low parasitic inductance layout |
| CN112510000A (en) * | 2020-11-17 | 2021-03-16 | 扬州国扬电子有限公司 | Power module with low parasitic inductance of driving loop |
| CN112510000B (en) * | 2020-11-17 | 2024-04-09 | 扬州国扬电子有限公司 | Power module with low parasitic inductance of driving loop |
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