CN105374803B - A kind of power module - Google Patents
A kind of power module Download PDFInfo
- Publication number
- CN105374803B CN105374803B CN201510816484.1A CN201510816484A CN105374803B CN 105374803 B CN105374803 B CN 105374803B CN 201510816484 A CN201510816484 A CN 201510816484A CN 105374803 B CN105374803 B CN 105374803B
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- Prior art keywords
- bridge arm
- upper bridge
- copper
- lower bridge
- arm power
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000010949 copper Substances 0.000 claims abstract description 89
- 229910052802 copper Inorganic materials 0.000 claims abstract description 89
- 238000009413 insulation Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 70
- 230000005611 electricity Effects 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-OIOBTWANSA-N copper-61 Chemical compound [61Cu] RYGMFSIKBFXOCR-OIOBTWANSA-N 0.000 description 2
- RYGMFSIKBFXOCR-YPZZEJLDSA-N copper-62 Chemical compound [62Cu] RYGMFSIKBFXOCR-YPZZEJLDSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a kind of power modules, including bottom plate, positive electrode, negative electrode, output electrode and insulating substrate, insulating substrate is set on the bottom plate, it is equipped with insulating layer between positive electrode, negative electrode and output electrode and bottom plate, insulating substrate includes thermally conductive insulating layer and the layers of copper that is formed in thermally conductive insulating layer；The layers of copper of the insulating substrate is equipped with an annular insulation tank, the layers of copper that insulation tank surrounds is lower bridge arm layers of copper, layers of copper on the outside of insulation tank is upper bridge arm layers of copper, and lower bridge arm layers of copper is equipped with lower bridge arm power chip unit, and upper bridge arm layers of copper is equipped with upper bridge arm power chip unit；Upper bridge arm power chip unit is flowed by upper bridge arm layers of copper by the operating current of positive electrode outflow, finally flow to output electrode；Lower bridge arm layers of copper is flowed by lower bridge arm power chip unit by the freewheel current of negative electrode outflow, finally flow to output electrode.
Description
Technical field
The present invention relates to field of power electronics, more particularly to a kind of power module.
Background technique
Power module is power electronic electrical device such as metal-oxide semiconductor (MOS) (power MOS pipe), insulated-gate type field effect
It answers transistor (IGBT), the power switch module that fast recovery diode (FRD) is combined and packaged by certain function is mainly used
In electric car, photovoltaic power generation, wind-power electricity generation, the power conversion under the various occasions such as industrial frequency conversion.
Since the power switch in module is repeatedly switched, power mould can be reduced by configuring generated inductance by its structure
The reliability of block.Existing module continuous current circuit area is big, and in the case of leading to high current, the continuous current circuit inductance of module is very big,
Keep the switching loss of module big, reliability is low.
Summary of the invention
Goal of the invention: that the object of the present invention is to provide a kind of stray inductances is low, switching loss is small, the power mould of high reliablity
Block.
Technical solution: to reach this purpose, the invention adopts the following technical scheme:
Power module of the present invention, including bottom plate, positive electrode, negative electrode, output electrode and insulating substrate, insulate base
Plate is set on the bottom plate, and insulating layer is equipped between positive electrode, negative electrode and output electrode and bottom plate, and insulating substrate includes thermally conductive exhausted
Edge layer and the layers of copper being formed in thermally conductive insulating layer；The layers of copper of the insulating substrate is equipped with an annular insulation tank, insulation
The layers of copper that slot surrounds is lower bridge arm layers of copper, and the layers of copper on the outside of insulation tank is upper bridge arm layers of copper, and lower bridge arm layers of copper is equipped with lower bridge arm
Power chip unit, upper bridge arm layers of copper are equipped with upper bridge arm power chip unit；Passed through by the operating current of positive electrode outflow upper
Bridge arm layers of copper flows into upper bridge arm power chip unit, finally flow to output electrode；Under being passed through by the freewheel current that negative electrode flows out
Bridge arm power chip unit flows into lower bridge arm layers of copper, finally flow to output electrode.
Further, the positive electrode and negative electrode are arranged in the direction superimposed layer for being parallel to bottom plate, and positive electrode and negative electricity
Insulating layer also is provided between pole.
Further, the insulation is groove etched in the layers of copper of insulating substrate.
Further, the upper bridge arm power chip unit includes multiple upper bridge arm power chip groups, lower bridge arm power chip
Unit includes multiple lower bridge arm power chip groups；Upper bridge arm power chip group include the upper bridge arm power switch that is integrated in one and
Upper bridge arm internal diode, and upper bridge arm power switch and upper bridge arm internal diode are in parallel；Lower bridge arm power chip group includes
The lower bridge arm power switch and lower bridge arm internal diode being integrated in one, and two poles inside lower bridge arm power switch and lower bridge arm
Pipe is in parallel；The negative of lower bridge arm internal diode is flow to from the anode of lower bridge arm internal diode by the freewheel current of negative electrode outflow
Then pole flow to output electrode through lower bridge arm layers of copper.
Further, the upper bridge arm power chip unit includes multiple upper bridge arm power chip groups, lower bridge arm power chip
Unit includes multiple lower bridge arm power chip groups；Upper bridge arm power chip group includes upper bridge arm power switch in parallel, upper bridge arm
Internal diode and upper bridge arm external diode, and upper bridge arm power switch and upper bridge arm internal diode are integrated in one；Under
Bridge arm power chip group includes lower bridge arm power switch, lower bridge arm internal diode and the lower bridge arm external diode of parallel connection, and
Lower bridge arm power switch and lower bridge arm internal diode are integrated in one；It is flowed through in lower bridge arm by the freewheel current that negative electrode flows out
The cathode of portion's diode and the anode of lower bridge arm external diode, lower bridge arm internal diode and lower bridge arm external diode, so
Output electrode is flow to by lower bridge arm layers of copper.
Further, the upper bridge arm power chip unit includes multiple upper bridge arm power chip groups, lower bridge arm power chip
Unit includes multiple lower bridge arm power chip groups；Upper bridge arm power chip group includes upper bridge arm power switch, and upper bridge arm power is opened
Portion is parallel with bridge arm external diode outside the Pass；Lower bridge arm power chip group includes lower bridge arm power switch, and lower bridge arm power is opened
Pass is parallel with lower bridge arm external diode；By negative electrode flow out freewheel current flow through lower bridge arm external diode anode, under
Then the cathode of bridge arm external diode flow to output electrode through lower bridge arm layers of copper.
Further, the upper bridge arm power switch and lower bridge arm power switch are power MOS pipe；By positive electrode outflow
Operating current flows into the drain electrode of upper bridge arm power switch by upper bridge arm layers of copper, then the source electrode outflow through upper bridge arm power switch
To output electrode.
Further, the upper bridge arm power switch and lower bridge arm power switch are IGBT pipe；Work is flowed out by positive electrode
Electric current flows into the collector of upper bridge arm power switch by upper bridge arm layers of copper, then the emitter outflow through upper bridge arm power switch
To output electrode.
Further, the upper bridge arm power switch is metal-oxide-semiconductor, and lower bridge arm power switch is IGBT pipe；It is flowed out by positive electrode
Operating current the drain electrode of upper bridge arm power switch, the source electrode stream then through upper bridge arm power switch are flowed by upper bridge arm layers of copper
Out to output electrode.
Further, the upper bridge arm power switch is IGBT pipe, and lower bridge arm power switch is metal-oxide-semiconductor；It is flowed out by positive electrode
Operating current flows into the collector of upper bridge arm power switch, the emitter then through upper bridge arm power switch by upper bridge arm layers of copper
Flow out to output electrode.
The utility model has the advantages that
1) in power module provided by the invention, the layers of copper of insulating substrate is equipped with an annular insulation tank, insulation tank packet
The layers of copper enclosed is lower bridge arm layers of copper, and the layers of copper on the outside of insulation tank is upper bridge arm layers of copper, and lower bridge arm layers of copper forms isolated island, and positive electrode
It is arranged with negative electrode lamination, so that being split into two-way by the operating current that positive electrode flows out, flows separately through the two sides of insulating substrate,
And flowed through by the freewheel current that negative electrode flows out from centre, therefore, the area that operating current access and freewheeling current path surround
It is small, it can be effectively reduced stray inductance, reduce switching loss, improve reliability；
2) number of upper bridge arm power chip group of the invention and lower bridge arm power chip group can be odd number or even numbers, make
It must design more flexible；
3) power module provided by the invention is applied at high-speed power module field, can preferably reduce stray electrical
Sense reduces switching loss；
4) bonding line can be used, and each electrode, each layers of copper and each power chip unit is straight in power module provided by the invention
Lead in succession, be effectively simplified circuit structure, reduces costs.
Detailed description of the invention
Fig. 1 is the current flow diagram of the power module of the embodiment of the present invention；
Fig. 2 is the electrode structural chart of the power module of the embodiment of the present invention；
Fig. 3 is the electrode structure sectional view of the power module of the embodiment of the present invention；
Fig. 4 is that upper bridge arm power switch and lower bridge arm power switch are IGBT pipe in the power module of the embodiment of the present invention
When circuit diagram；
Fig. 5 is that upper bridge arm power switch and lower bridge arm power switch are power in the power module of the embodiment of the present invention
Circuit diagram when metal-oxide-semiconductor；
Fig. 6 is the practical wiring figure of the power module of the embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing, technical solution of the present invention is further elaborated.
As shown in Fig. 1, Fig. 6, the power module of the embodiment of the present invention includes bottom plate 1, the shell 9 of insulation, positive electrode 2, bears
Electrode 3, output electrode 4, insulating substrate 5, upper bridge arm power chip unit 7 and lower bridge arm power chip unit 8.Shell 9 is arranged
On bottom plate 1, a part is dug up among bottom, a circle at edge retains, and positive electrode 2, negative electrode 3 and output electrode 4 are molded
It is insulation between the part that 9 bottom margin of shell retains namely positive electrode 2, negative electrode 3 and output electrode 4 and bottom plate 1
's.One end of 9 bottom of shell is arranged in output electrode 4, and the other end of 9 bottom of shell is arranged in positive electrode 2 and negative electrode 3.Absolutely
Edge substrate 5 is set on bottom plate 1, it is three-decker, including upper surface layers of copper, the aluminium oxide of lower surface layers of copper and centre or nitridation
Aluminium ceramics, wherein upper surface layers of copper is connect with chip, is etched with circuit diagram, and the distribution form for changing upper surface layers of copper is i.e. changeable
The path of 5 upper surface electric current of insulating substrate.The upper surface layers of copper of insulating substrate 5 is equipped with an annular insulation tank 14, insulation tank
14 layers of copper surrounded are lower bridge arm layers of copper, and the layers of copper in 14 outside of insulation tank is upper bridge arm layers of copper, so that lower bridge arm layers of copper forms orphan
Island.Upper bridge arm layers of copper is equipped with a upper bridge arm power chip unit 7, and upper bridge arm power chip unit 7 includes six in parallel
Upper bridge arm power chip group；Lower bridge arm layers of copper is equipped with a lower bridge arm power chip unit 8, lower bridge arm power chip unit 8
Including six lower bridge arm power chip groups in parallel.The number of upper bridge arm power chip group and lower bridge arm power chip group can be
Odd number or even numbers, so that design is more flexible.
The first structure of upper bridge arm power chip group and lower bridge arm power chip group are as follows: above bridge arm power chip group includes
The upper bridge arm power switch being integrated in one and upper bridge arm internal diode, and two poles inside upper bridge arm power switch and upper bridge arm
Pipe is in parallel；Lower bridge arm power chip group includes the lower bridge arm power switch being integrated in one and lower bridge arm internal diode, and under
Bridge arm power switch and lower bridge arm internal diode are in parallel；The freewheel current 13 flowed out by negative electrode 3 is from two poles inside lower bridge arm
The anode of pipe flow to the cathode of lower bridge arm internal diode, then flow to output electrode 4 through lower bridge arm layers of copper.
Second of structure of upper bridge arm power chip group and lower bridge arm power chip group are as follows: above bridge arm power chip group includes
Upper bridge arm power switch, upper bridge arm internal diode and upper bridge arm external diode in parallel, and upper bridge arm power switch and upper
Bridge arm internal diode is integrated in one；Lower bridge arm power chip group includes lower bridge arm power switch in parallel, inside lower bridge arm
Diode and lower bridge arm external diode, and lower bridge arm power switch and lower bridge arm internal diode are integrated in one；By negative electricity
The freewheel current 13 that pole 3 is flowed out is flow to two inside lower bridge arm from the anode of lower bridge arm internal diode and lower bridge arm external diode
Then the cathode of pole pipe and lower bridge arm external diode flow to output electrode 4 through lower bridge arm layers of copper.
The third structure of upper bridge arm power chip group and lower bridge arm power chip group are as follows: above bridge arm power chip group includes
Upper bridge arm power switch, upper bridge arm power switch parallel connection outside have upper bridge arm external diode；Lower bridge arm power chip group includes
Lower bridge arm power switch, lower bridge arm power switch are parallel with lower bridge arm external diode；The freewheel current 13 flowed out by negative electrode 3
It flow to the cathode of lower bridge arm external diode from the anode of lower bridge arm external diode, then flow to output electricity through lower bridge arm layers of copper
Pole 4.
Wherein, upper bridge arm power switch is that power MOS pipe or IGBT are managed, lower bridge arm power switch be power MOS pipe or
Person IGBT pipe.
When upper bridge arm power switch and lower bridge arm power switch are power MOS pipe, upper bridge arm layers of copper includes upper bridge arm
The layers of copper 51 that drains and upper bridge arm source electrode layers of copper 52, lower bridge arm layers of copper include lower bridge arm drain electrode layers of copper 61 and lower bridge arm source electrode layers of copper
62.As shown in Figure 1 and Figure 5, the operating current 12 flowed out by positive electrode 2 flows into upper bridge arm power switch by upper bridge arm layers of copper
Drain electrode, the source electrode then through upper bridge arm power switch flow out to output electrode 4.
When upper bridge arm power switch and lower bridge arm power switch are IGBT pipe, as shown in figure 4, being flowed out by positive electrode 2
Operating current 12 flows into the collector of upper bridge arm power switch, the transmitting then through upper bridge arm power switch by upper bridge arm layers of copper
Pole flows out to output electrode 4.
Upper bridge arm power switch is metal-oxide-semiconductor, and lower bridge arm power switch is IGBT pipe；The operating current flowed out by positive electrode 2
12 flow into the drain electrode of upper bridge arm power switch by upper bridge arm layers of copper, and the source electrode then through upper bridge arm power switch flows out to output
Electrode 4.
Upper bridge arm power switch is IGBT pipe, and lower bridge arm power switch is metal-oxide-semiconductor；Operating current 12 is flowed out by positive electrode 2
The collector of upper bridge arm power switch is flowed by upper bridge arm layers of copper, the emitter then through upper bridge arm power switch flows out to defeated
Electrode 4 out.
The above bridge arm power switch and lower bridge arm power switch are power MOS pipe below, upper bridge arm power chip group with
For lower bridge arm power chip group uses the first structure, the process of power module work and afterflow of the invention is introduced, below
Alleged bonding line is the translation of English bonding:
When work, the grid of upper bridge arm power switch connects suspension control signal connection, and operating current 12 is flowed out from positive electrode 2,
Upper bridge arm drain electrode layers of copper 51 is flowed by positive bonding line 111, is since upper bridge arm drains between layers of copper 51 and lower bridge arm layers of copper
Isolation, therefore operating current 12 is split into two-way, flow to upper bridge arm power via the arranged on left and right sides of upper bridge arm drain electrode layers of copper 51
Switch, then current distributing separately flows into the drain electrode of six upper bridge arm power switch, then from upper bridge arm power switch at six tunnels
Source electrode outflow, flow to upper bridge arm source electrode layers of copper 52 through upper bridge arm bonding line 113, finally flow out to output electrode 4.
When afterflow, freewheel current 13 is flowed out from negative electrode 3, flows into lower bridge arm source electrode layers of copper 62 by cathode bonding line 112,
Then six tunnels are split into, the anode of six lower bridge arm internal diodes are separately flowed by lower bridge arm bonding line 114, then under
The cathode of bridge arm internal diode flows out to lower bridge arm drain electrode layers of copper 61, and flow to upper bridge arm source electrode through upper bridge arm bonding line 113
Layers of copper 52 finally flows out to output electrode 4.
Each electrode, each layers of copper and each power chip unit are directly connected to using bonding line above, are effectively simplified electricity
Line structure reduces costs.In addition, the mode of ultrasonic bonding also can be used by each electrode, each layers of copper and each power chip
Unit is directly connected to.
In order to enable operating current 12 and freewheel current 13 flow through different paths, do not influence each other, needs to change positive electricity
The structure of pole 2 and negative electrode 3, using polar stack form.As shown in Figures 2 and 3, the positive electrode 2 includes and 9 bottom of shell
The positive electrode lead division 21 of connection and the positive electrode interconnecting piece 22 connecting with positive electrode lead division 21, negative electrode 3 include and shell 9
The negative electrode lead division 31 of bottom connection and the negative electrode interconnecting piece 32 being connect with negative electrode lead division 31, wherein positive electrode connects
Socket part 22 and negative electrode interconnecting piece 32 are arranged in the direction superimposed layer for being parallel to bottom plate 1, and positive electrode interconnecting piece 22 and negative electrode
Insulating layer is equipped between interconnecting piece 32, so that positive electrode 2, negative electrode 3 are not turned on each other.Using this positive electrode 2 and bear
The structure of electrode 3 so that operating current 12 flows on two different paths respectively with freewheel current 13, also with upper bridge arm copper
The structure that layer is separated with lower bridge arm layers of copper is adapted.
In power module provided by the invention, the layers of copper of insulating substrate 5 is equipped with an annular insulation tank 14, insulation tank 14
The layers of copper of encirclement is lower bridge arm layers of copper, and the layers of copper in 14 outside of insulation tank is upper bridge arm layers of copper, and lower bridge arm layers of copper forms isolated island, and just
Electrode connecting portion 22 and 32 lamination of negative electrode interconnecting piece are arranged, so that the operating current 12 flowed out by positive electrode 2 is split into two-way,
The two sides of insulating substrate 5 are flowed separately through, and the freewheel current 13 flowed out by negative electrode 3 is flowed through from centre, therefore, operating current is logical
Road and the area that freewheeling current path surrounds are small, can be effectively reduced stray inductance, reduce switching loss, improve reliability.
Power module provided by the invention is applied at high-speed power module field, and stray inductance can be preferably reduced,
Reduce switching loss.
Claims (10)
1. a kind of power module, including bottom plate (1), positive electrode (2), negative electrode (3), output electrode (4) and insulating substrate (5),
Insulating substrate (5) is set on bottom plate (1), is equipped between positive electrode (2), negative electrode (3) and output electrode (4) and bottom plate (1)
Insulating layer, insulating substrate (5) include thermally conductive insulating layer and the layers of copper that is formed in thermally conductive insulating layer；It is characterized by: described
The layers of copper of insulating substrate (5) is equipped with an annular insulation tank (14), and the layers of copper that insulation tank (14) surrounds is lower bridge arm layers of copper, absolutely
Layers of copper on the outside of edge slot (14) is upper bridge arm layers of copper, and lower bridge arm layers of copper is equipped with lower bridge arm power chip unit (8), upper bridge arm copper
Layer is equipped with upper bridge arm power chip unit (7)；It is flowed by the operating current (12) that positive electrode (2) are flowed out by upper bridge arm layers of copper
Upper bridge arm power chip unit (7), finally flow to output electrode (4)；Under being passed through by the freewheel current (13) that negative electrode (3) are flowed out
Bridge arm power chip unit (8) flows into lower bridge arm layers of copper, finally flow to output electrode (4).
2. power module according to claim 1, it is characterised in that: the positive electrode (2) is being parallel to negative electrode (3)
The direction superimposed layer of bottom plate (1) is arranged, and also is provided with insulating layer between positive electrode (2) and negative electrode (3).
3. power module according to claim 1, it is characterised in that: insulation tank (14) etching is in insulating substrate (5)
Layers of copper on.
4. power module according to claim 1, it is characterised in that: the upper bridge arm power chip unit (7) includes more
A upper bridge arm power chip group, lower bridge arm power chip unit (8) include multiple lower bridge arm power chip groups；Upper bridge arm power core
Piece group includes the upper bridge arm power switch being integrated in one and upper bridge arm internal diode, and upper bridge arm power switch and upper bridge arm
Internal diode is in parallel；Lower bridge arm power chip group includes two poles inside the lower bridge arm power switch being integrated in one and lower bridge arm
Pipe, and lower bridge arm power switch and lower bridge arm internal diode are in parallel；By the freewheel current (13) of negative electrode (3) outflow from Xia Qiao
The anode of arm internal diode flow to the cathode of lower bridge arm internal diode, then flow to output electrode (4) through lower bridge arm layers of copper.
5. power module according to claim 1, it is characterised in that: the upper bridge arm power chip unit (7) includes more
A upper bridge arm power chip group, lower bridge arm power chip unit (8) include multiple lower bridge arm power chip groups；Upper bridge arm power core
Piece group includes in parallel upper bridge arm power switch, upper bridge arm internal diode and upper bridge arm external diode, and upper bridge arm power
Switch and upper bridge arm internal diode are integrated in one；Lower bridge arm power chip group include lower bridge arm power switch in parallel, under
Bridge arm internal diode and lower bridge arm external diode, and lower bridge arm power switch and lower bridge arm internal diode are integrated in one
Body；By negative electrode (3) flow out freewheel current (13) flow through lower bridge arm internal diode and lower bridge arm external diode anode,
Then the cathode of lower bridge arm internal diode and lower bridge arm external diode flow to output electrode (4) through lower bridge arm layers of copper.
6. power module according to claim 1, it is characterised in that: the upper bridge arm power chip unit (7) includes more
A upper bridge arm power chip group, lower bridge arm power chip unit (8) include multiple lower bridge arm power chip groups；Upper bridge arm power core
Piece group includes upper bridge arm power switch, and upper bridge arm power switch parallel connection outside has upper bridge arm external diode；Lower bridge arm power core
Piece group includes lower bridge arm power switch, and lower bridge arm power switch is parallel with lower bridge arm external diode；By negative electrode (3) outflow
Freewheel current (13) flows through the cathode of the anode of lower bridge arm external diode, lower bridge arm external diode, then through lower bridge arm copper
Laminar flow is to output electrode (4).
7. the power module according to any one of claim 4 to 6, it is characterised in that: the upper bridge arm power switch
It is power MOS pipe with lower bridge arm power switch；It is flowed by the operating current (12) that positive electrode (2) are flowed out by upper bridge arm layers of copper
The drain electrode of upper bridge arm power switch, the source electrode then through upper bridge arm power switch flow out to output electrode (4).
8. the power module according to any one of claim 4 to 6, it is characterised in that: the upper bridge arm power switch
It is IGBT pipe with lower bridge arm power switch；Upper bridge is flowed by upper bridge arm layers of copper by positive electrode (2) outflow operating current (12)
The collector of arm power switch, the emitter then through upper bridge arm power switch flow out to output electrode (4).
9. the power module according to any one of claim 4 to 6, it is characterised in that: the upper bridge arm power switch
For metal-oxide-semiconductor, lower bridge arm power switch is IGBT pipe；Upper bridge arm layers of copper stream is passed through by the operating current (12) that positive electrode (2) are flowed out
Enter the drain electrode of upper bridge arm power switch, the source electrode then through upper bridge arm power switch flows out to output electrode (4).
10. the power module according to any one of claim 4 to 6, it is characterised in that: the upper bridge arm power switch
For IGBT pipe, lower bridge arm power switch is metal-oxide-semiconductor；It is flowed by positive electrode (2) outflow operating current (12) by upper bridge arm layers of copper
The collector of upper bridge arm power switch, the emitter then through upper bridge arm power switch flow out to output electrode (4).
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| CN105931998B (en) * | 2016-06-17 | 2018-07-20 | 扬州国扬电子有限公司 | A kind of insulating substrate structure and the power module using the substrate |
| CN107546218A (en) * | 2017-08-15 | 2018-01-05 | 杭州浙阳电气有限公司 | Low spurious Inductor substrate and its power semiconductor modular |
| CN108447846A (en) * | 2018-06-06 | 2018-08-24 | 臻驱科技（上海）有限公司 | A kind of power semiconductor modular substrate and power semiconductor modular |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103545305A (en) * | 2013-11-01 | 2014-01-29 | 徐员娉 | Power module |
| CN205140970U (en) * | 2015-11-23 | 2016-04-06 | 扬州国扬电子有限公司 | Power module |
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| JP4040838B2 (en) * | 2000-12-18 | 2008-01-30 | 三菱電機株式会社 | Power semiconductor device |
| DE10316356B4 (en) * | 2003-04-10 | 2012-07-26 | Semikron Elektronik Gmbh & Co. Kg | Modular power semiconductor module |
| DE102006038479B4 (en) * | 2006-08-17 | 2011-01-27 | Infineon Technologies Ag | Power semiconductor module with two multiple power semiconductor devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103545305A (en) * | 2013-11-01 | 2014-01-29 | 徐员娉 | Power module |
| CN205140970U (en) * | 2015-11-23 | 2016-04-06 | 扬州国扬电子有限公司 | Power module |
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