CN108447846A - A kind of power semiconductor modular substrate and power semiconductor modular - Google Patents
A kind of power semiconductor modular substrate and power semiconductor modular Download PDFInfo
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- CN108447846A CN108447846A CN201810576025.4A CN201810576025A CN108447846A CN 108447846 A CN108447846 A CN 108447846A CN 201810576025 A CN201810576025 A CN 201810576025A CN 108447846 A CN108447846 A CN 108447846A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 138
- 229910052751 metal Inorganic materials 0.000 claims abstract description 138
- 239000011248 coating agent Substances 0.000 claims abstract description 129
- 238000000576 coating method Methods 0.000 claims abstract description 129
- 238000009413 insulation Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
Abstract
The invention discloses a kind of power semiconductor modular substrate and power semiconductor modulars.The power semiconductor modular substrate of the present invention includes the first bridge arm unit, and the first bridge arm unit includes the first power metal coating, the first assistant metal coating and the second power metal coating set gradually along first direction；Second power metal coating is equipped with the first power switch, wherein, first power switch includes first switch group, second switch group and third switching group, first switch group, second switch group and third switching group are arranged side by side in a second direction successively, the transistor chip of first switch group and the transistor chip of third switching group are arranged respectively close to the first assistant metal coating, and the transistor chip of second switch group is arranged far from the first assistant metal coating.The power semiconductor modular substrate and power semiconductor modular of the present invention can reduce the stray parameter between simultaneously each chip of equal power switch, improve the reliability and output power of power semiconductor modular.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of power semiconductor modular substrates and power semiconductor mould
Block.
Background technology
The through-current capability of single power semiconductor chip is limited, is the power handling capability of extended power semiconductor module,
The mode of generally use multi-chip parallel connection forms bridge arm switch inside the power semiconductor modular of large capacity.It is switched in each bridge arm
In, to realize the two-way flow of electric current or reducing loss, chip generally use in parallel can be controlled it by coordination electrode and switch shape
The transistor chip of state and diode chip for backlight unit with one-way conduction ability, wherein transistor chip and diode chip for backlight unit are at it
Power electrode is in parallel.
For the transistor chip with control terminal, the chip inside the power semiconductor modular with 3 chip gate leves drives
The model of dynamic circuit is as shown in Figure 1.Wherein, capacitance Cg1, capacitance Cg2, capacitance Cg3Respectively represent three pieces of transistor chips in parallel
Grid capacitance, the through-current capability of each transistor chip determines by the voltage in corresponding grid capacitance respectively.Port TgThe end and
Mouth TεFor the connectivity port of the driving circuit outside power semiconductor modular and power semiconductor modular, believe for receiving driving
Number.Resistance Rg0With inductance Lg0The respectively stray resistance and stray inductance of chip drive circuit common portion.Resistance Rg1、Rg2、
Rg3With inductance Lg1、Lg2、Lg3The individual stray resistance of respectively three pieces of transistor chips and stray inductance.
The concrete operating principle of chip drive circuit is：In power semiconductor modular opening process, it is added in port TgWith
Port TεOn driving voltage positive value is increased to by specific negative value, lead to capacitance Cg1, capacitance Cg2, capacitance Cg3In both end voltage
It rises, makes to rise by the electric current of the power terminal of transistor chip, transistor chip is open-minded；It was turned off in power semiconductor modular
Cheng Zhong is added in port TgWith port TεOn driving voltage negative value is reduced to by specific positive value, lead to capacitance Cg1, capacitance Cg2、
Capacitance Cg3Both end voltage declines, and makes to decline by the electric current of transistor chip power terminal, transistor chip shutdown.If chip drives
Stray electrical inductance value is larger in dynamic circuit, and stray inductance and grid capacitance are then easily caused in power semiconductor modular switching process
Between voltage oscillation.For example, if the voltage at grid capacitance both ends keeps transistor chip open-minded because oscillation is less than in opening process
Threshold voltage, then may cause transistor chip accidentally turn off.If for another example in turn off process grid capacitance both ends voltage because
Oscillation then may cause opening by mistake for transistor chip logical higher than the threshold voltage for making transistor chip turn off.Both the above situation
It is unfavorable for the reliably working of power semiconductor modular.
If the stray parameter of transistor chip in parallel is inconsistent, the grid capacitance charge and discharge in switching process can be caused
Speed is inconsistent, so as to cause, by the unevenness of the power current of transistor chip, being finally reflected in transistor in switching process
In the temperature difference of chip.In the case of power semiconductor modular full power operation, it is also possible to because of the electricity of transistor chip
Flow distribution unevenness caused mild overcurrent, led to the failure that may cause transistor chip, and influence power semiconductor modular can
By property and output power.
Therefore, inconsistent for the stray parameter of the transistor chip of existing power semiconductor modular, cause to influence work(
A kind of the problem of reliability and output power of rate semiconductor module, it is desirable to provide stray parameter for capableing of balanced transistor-resistor logic chip
Power semiconductor modular substrate and power semiconductor modular.
Invention content
To solve the above problems, a kind of power semiconductor modular substrate of present invention offer and power semiconductor modular, work(
The layout type of rate switch can reduce and the stray parameter between each chip of equal power switch, improves power semiconductor
The reliability and output power of module.
To achieve the above object, the present invention provides a kind of power semiconductor modular substrate, including the first bridge arm unit,
One bridge arm unit includes the first power metal coating, the first assistant metal coating and the second power set gradually along first direction
Metal backing；Second power metal coating be equipped with the first power switch, the first power metal coating by the first power switch with
Second power metal coating is conductively connected；First assistant metal coating and the first power metal coating, the second power metal coating
Insulation set, and connect with the first power switch signal；Wherein,
First power switch includes first switch group, second switch group and third switching group, first switch group, second switch
Group and third switching group are arranged side by side in a second direction successively, and switching group respectively includes being arranged and being connected with each other along first direction
Transistor chip and diode chip for backlight unit, the transistor chip of first switch group and the transistor chip of third switching group lean on respectively
Nearly first assistant metal coating setting, the transistor chip of second switch group are arranged far from the first assistant metal coating.
Further, further include the second bridge arm unit, the second bridge arm unit includes the third set gradually along first direction
Power metal coating, the second assistant metal coating and the 4th power metal coating；Third power metal coating is equipped with the second power
Switch, third power metal coating are conductively connected by the first power switch and the second power metal coating, the 4th power metal
Coating is conductively connected by the second power switch and third power metal coating；Second assistant metal coating and third power metal
Coating, the 4th power metal coating insulation set, and connect with the second power switch signal；Wherein,
Second power switch includes the 4th switching group, the 5th switching group and the 6th switching group, the 4th switching group, the 5th switch
Group and the 6th switching group are arranged side by side in a second direction successively, and switching group respectively includes being arranged and being connected with each other along first direction
Transistor chip and diode chip for backlight unit, the transistor chip of the 4th switching group and the transistor chip of the 6th switching group lean on respectively
Nearly second assistant metal coating setting, the transistor chip of the 5th switching group are arranged far from the second assistant metal coating.
Further, transistor chip and diode chip for backlight unit are respectively equipped with two groups of power electrodes, transistor along first direction
Chip and diode chip for backlight unit one group of power electrode close to each other are for being connected with each other, transistor chip and diode chip for backlight unit phase
Mutually one group separate of power electrode with power metal coating for being conductively connected.
Further, transistor chip is equipped with coordination electrode, the control that the first assistant metal coating passes through transistor chip
Electrode is connect with first switch group, second switch group and third switching group signal.
Further, the first assistant metal coating is equipped with first grid signal terminal, first switch group and second switch
The coordination electrode of the transistor chip of group is respectively set close to the side of third switching group, the transistor chip of third switching group
Coordination electrode is disposed in proximity to the side of second switch group；The coordination electrode of the transistor chip of first switch group and the first auxiliary
Metal backing signal connects, the control of the coordination electrode of the transistor chip of second switch group and the transistor chip of third switching group
It is connect with the first assistant metal coating signal after electrode connection processed.
Further, position corresponding with first grid signal terminal is equipped with the first emitter on the first power metal coating
Signal terminal.
Further, transistor chip is equipped with coordination electrode, the control that the second assistant metal coating passes through transistor chip
Electrode is connect with the 4th switching group, the 5th switching group and the 6th switching group signal.
Further, the second assistant metal coating is equipped with second grid signal terminal close to one end of the 4th switching group, the
The coordination electrode of the transistor chip of four switching groups is disposed in proximity to the side of the 5th switching group, the 5th switching group and the 6th switch
The coordination electrode of the transistor chip of group is respectively set close to the side of the 4th switching group；The transistor chip of 5th switching group
Coordination electrode is connect with after the series connection of the coordination electrode of the transistor chip of the 4th switching group with the second assistant metal coating signal, the
The coordination electrode of the transistor chip of six switching groups is connect with the second assistant metal coating signal.
Further, position corresponding with second grid signal terminal is equipped with the second emitter signal on the 4th metal backing
Terminal.
The present invention also provides a kind of power semiconductor modulars, including above-mentioned power semiconductor modular substrate.
The power semiconductor modular substrate and power semiconductor modular of the present invention, the power switch of each of which bridge arm unit
Transistor chip and semiconductor chip in three groups of switching groups are alternately arranged, and make the crystal for being located at intermediate one group of switching group
Tube chip is arranged far from assistant metal coating, can effectively reduce the spuious ginseng between each chip of equal power switch
The power current of each chip of power switch in parallel, exists to reduce power semiconductor modular during number, equalizer switch
False triggering risk when high-speed switch improves power semiconductor modular operational reliability, and improves power semiconductor modular
Output power.
Description of the drawings
Fig. 1 is the chip drive circuit figure of the power semiconductor modular of the prior art；
Fig. 2 is the structural schematic diagram of the metal backing of power semiconductor modular substrate of the present invention；
Fig. 3 is the arrangement architecture figure of each group switching group of the first power switch of the invention；
Fig. 4 is the structural schematic diagram of power semiconductor modular substrate of the present invention.
Specific implementation mode
In the following, in conjunction with attached drawing, structure and operation principle to the present invention etc. are further described.
As shown in Fig. 2, an embodiment of the present invention provides a kind of power semiconductor modular substrate, including the first bridge arm unit and
Second bridge arm unit.Wherein, the first bridge arm unit includes along first direction (first direction is the direction in Fig. 2-4 from top to bottom)
The first power metal coating 10, the first assistant metal coating 30 and the second power metal coating 20 set gradually, the first auxiliary
Metal backing 30 and the first power metal coating 10,20 insulation set of the second power metal coating, the second bridge arm unit includes edge
Third power metal coating 40, the second assistant metal coating 60 and the 4th power metal coating 50 that first direction is set gradually,
Second assistant metal coating 60 and third power metal coating 40,50 insulation set of the 4th power metal coating.First power gold
Belong to the leading-out terminal 11 that coating 10 is equipped with power current, divides on the second power metal coating 20 and the 4th power metal coating 50
Not She You power current input terminal 21,51.
Specifically, the first power switch is equipped on the second power metal coating 20, the first power metal coating 10 passes through
First power switch is conductively connected with the second power metal coating 20.First assistant metal coating 30 and the first power switch signal
Connection, for controlling the working condition of the first power switch, that is, control the first power switch be in operating mode be in it is non-
Operating mode.Third power metal coating 40 is conductively connected by the first power switch and the second power metal coating 20.Third
Power metal coating 40 is equipped with the second power switch, and the 4th power metal coating 50 passes through the second power switch and third power gold
Belong to coating 40 to be conductively connected.Second assistant metal coating 60 is connect with the second power switch signal, is opened for controlling the second power
The working condition of pass, that is, control the second power switch and be in operating mode and be in non-operating mode.
In the present embodiment, as shown in figure 3, the first power switch includes first switch group 71, second switch group 72 and
Three switching groups 73, (second direction is figure in a second direction successively for first switch group 71, second switch group 72 and third switching group 73
Direction in 2-4 from left to right) it is arranged side by side, include that a pair is arranged and is connected with each other along first direction in every group of switching group
Transistor chip 711,721,731 and diode chip for backlight unit 712,722,732.Wherein, the transistor chip of first switch group 71
711 and the transistor chip 731 of third switching group 73 be arranged respectively close to the first assistant metal coating 30, second switch group 72
Transistor chip 721 is arranged far from the first assistant metal coating 30.The diode chip for backlight unit 712 and third of first switch group 71 switch
The diode chip for backlight unit 732 of group 73 is respectively further from the setting of the first assistant metal coating 30, the diode chip for backlight unit 722 of second switch group 72
It is arranged close to the first assistant metal coating 30.The arrangement architecture of second power switch is opposite with the arrangement architecture of the first power switch
Claim.Second power switch include the 4th switching group, the 5th switching group and the 6th switching group, the 4th switching group, the 5th switching group and
6th switching group is arranged side by side in a second direction successively, includes a pair of along first direction setting and mutual in every group of switching group
The transistor chip 811,821,831 and diode chip for backlight unit 812,822,832 of connection.Wherein, the crystal tube core of the 4th switching group
Piece 811 and the transistor chip 831 of the 6th switching group are arranged respectively close to the second assistant metal coating 60, the crystalline substance of the 5th switching group
Body tube chip 821 is arranged far from the second assistant metal coating 60.The diode chip for backlight unit 812 of 4th switching group and the 6th switching group
Diode chip for backlight unit 832 is respectively further from the setting of the second assistant metal coating 60, and the diode chip for backlight unit 822 of the 5th switching group is close to second
Assistant metal coating 60 is arranged.Specifically, as shown in figure 4, the transistor chip 721 of second switch group 72 is far from the first auxiliary gold
Belong to coating 30 to be arranged, the transistor chip 821 of the 5th switching group is arranged far from the second assistant metal coating 60.
Since the power switch of single bridge arm unit is under general work pattern, transistor chip in every group of switching group and
Diode chip for backlight unit connected in parallel will not simultaneously turn on electric current, and the transistor chip in every group of switching group will not with diode chip for backlight unit
Generate heat simultaneously.Therefore, this arrangement architecture can be between each transistor chip for increasing each power switch and each
While spacing between a diode chip for backlight unit, reduce the thermal coupling between each diode chip for backlight unit between each transistor chip
Conjunction degree, the temperature of balanced each chip, improves the power density and operational reliability of power semiconductor modular.
Simultaneously as the transistor chip 721 of second switch group 72 is arranged far from the first assistant metal coating 30, the 5th
The transistor chip 821 of switching group is arranged far from the second assistant metal coating 60, can further reduce and balanced each work(
Stray parameter between each chip of rate switch, to reduce false triggering wind of the power semiconductor modular in high-speed switch
Danger.
In embodiments of the present invention, transistor chip 711,721,731,811,821,831 and diode chip for backlight unit 712,
722,731,812,822,832 upper surface is respectively equipped with two groups of power electrodes along first direction, transistor chip 711,721,
731,811,821,831 and one group of the power electrode close to each other of diode chip for backlight unit 712,722,731,812,822,832 use
In interconnection, one group of power electrode being located remotely from each other with power metal coating for being conductively connected.Specifically, transistor
Chip and diode chip for backlight unit, power metal coating and transistor chip or diode chip for backlight unit are connected by attachment device 92 respectively.
Wherein, attachment device 92 can be binding line.At this point, the second power metal coating 20 forms the first power potential area, the first work(
Rate metal backing 10, third power metal coating 40, the power terminal of each chip, attachment device 92 form the second power potential
Area, the 4th power metal coating 50 form third power potential area, the first assistant metal coating 30 and the second assistant metal coating
60 are respectively formed auxiliary potential area.
In embodiments of the present invention, transistor chip 711,721,731,811,821,831 are respectively equipped with coordination electrode 91,
As shown in figure 4, the first assistant metal coating 30 is by transistor chip 711,721,731, coordination electrode 91 and first switch
Group 71, second switch group 72 are connected with 73 signal of third switching group.Second assistant metal coating 60 by transistor chip 811,
821,831 coordination electrode 91 is connect with the 4th switching group, the 5th switching group and the 6th switching group signal.
Wherein, the first assistant metal coating 30 is equipped with first grid signal terminal 31, the transistor of first switch group 71
The coordination electrode 91 of chip 711 and the transistor chip of second switch group 72 721 is respectively set one close to third switching group 73
The coordination electrode 91 of side, the transistor chip 731 of third switching group 73 is disposed in proximity to the side of second switch group 72.Second is auxiliary
Aided metal coating 60 is equipped with second grid signal terminal 61, the transistor chip of the 4th switching group close to one end of the 4th switching group
811 coordination electrode 91 is disposed in proximity to the side of the 5th switching group, and the transistor chip 821 and the 6th of the 5th switching group switchs
The coordination electrode 91 of the transistor chip 831 of group is respectively set close to the side of the 4th switching group.First grid signal terminal 31
It is respectively used to connection grid signal with second grid signal terminal 61.
Specifically, the coordination electrode 91 of the transistor chip 711 of first switch group 71 and the first assistant metal coating 30 are believed
Number connection, i.e., the coordination electrode 91 of the transistor chip 711 of first switch group 71 directly pass through attachment device 92 and first auxiliary
Metal backing 30 individually connects.The crystalline substance of the coordination electrode 91 and third switching group 73 of the transistor chip 721 of second switch group 72
The coordination electrode 91 of body tube chip 731 after being connected by same attachment device 92 with 30 signal of the first assistant metal coating by connecting
Connect, i.e., the order of connection be followed successively by the first assistant metal coating 30, third switching group 73 transistor chip 731 coordination electrode
91, the coordination electrode 91 of the transistor chip 721 of second switch group 72.The control electricity of the transistor chip 821 of 5th switching group
Pole 91 assists after being connect by same attachment device 92 with the coordination electrode 91 of the transistor chip 811 of the 4th switching group with second
60 signal of metal backing connect, i.e., the order of connection be followed successively by the second assistant metal coating 60, the 4th switching group transistor chip
The coordination electrode 91 of 811 coordination electrode 91, the transistor chip 821 of the 5th switching group.The transistor chip of 6th switching group
831 coordination electrode 91 is connect with 60 signal of the second assistant metal coating, i.e. the control of the transistor chip 831 of the 6th switching group
Electrode 91 is directly individually connect by attachment device 92 with the second assistant metal coating 60.
In embodiments of the present invention, attachment device 92 can be binding line, in order to keep the length of binding line short as possible,
To reduce stray parameter, the binding line that coordination electrode 91 is connect with the first assistant metal coating 30 or the second assistant metal coating 60
It should be arranged along first direction, at this point, the both ends of the first assistant metal coating 30 and the second assistant metal coating 60 should at least extend
To the position with 91 face of coordination electrode of two transistor chips positioned at outside of each power switch.
In embodiments of the present invention, position corresponding with first grid signal terminal 31 is set on the first power metal coating 10
There is the first emitter signal terminal 12, for connecting emitter signal.On 4th metal backing with second grid signal terminal 61
Corresponding position is equipped with the second emitter signal terminal 52, for connecting emitter signal.Wherein, the first emitter signal terminal
12 should be arranged close proximity to first grid signal terminal 31, and the second emitter signal terminal 52 should be close proximity to second grid signal
Terminal 61 is arranged.
The embodiment of the present invention additionally provides a kind of power semiconductor modular, includes the power semiconductor mould of the embodiment of the present invention
Block substrate.
Using Ansys Q3D softwares to the power semiconductor mould of the power semiconductor modular substrate using the embodiment of the present invention
Block and the power semiconductor modular of the prior art are emulated, and obtain each transistor chip of the first bridge arm unit respectively
Stray inductance, as shown in table 1.Wherein, stray inductance 1 is the stray inductance of each transistor chip of the embodiment of the present invention,
Stray inductance 2 is the stray inductance of each transistor chip of the prior art.Transistor chip 1 corresponds to the crystal of first switch group
Tube chip, transistor chip 2 correspond to the transistor chip of second switch group, and transistor chip 3 corresponds to the crystal of third switching group
Tube chip.
The stray inductance of each transistor chip of 1 first bridge arm unit of table
| Stray inductance 1 | Stray inductance 2 | |
| Transistor chip 1 | 26.69nH | 26.31nH |
| Transistor chip 2 | 26.84nH | 30.02nH |
| Transistor chip 3 | 22.06nH | 21.84nH |
By table 1 as it can be seen that the embodiment of the present invention reduces the maximum spur inductance of the transistor chip of second switch group
3.18nH, the stray inductance inequality extent of the transistor chip of second switch group and the transistor chip of first switch group by
15% be reduced to 1% hereinafter, the stray inductance of the transistor chip of the transistor chip and third switching group of second switch group not
Balance degree is reduced to 21% by 37%.
More than, schematic description only of the invention, it will be recognized by those skilled in the art that in the work without departing from the present invention
On the basis of making principle, a variety of improvement can be made to the present invention, this is all belonged to the scope of protection of the present invention.
Claims (10)
1. a kind of power semiconductor modular substrate, which is characterized in that including the first bridge arm unit, first bridge arm unit includes
The first power metal coating, the first assistant metal coating and the second power metal coating set gradually along first direction；It is described
Second power metal coating is equipped with the first power switch, and the first power metal coating passes through first power switch and institute
The second power metal coating is stated to be conductively connected；The first assistant metal coating and the first power metal coating, described the
Two power metal coating insulation sets, and connect with first power switch signal；Wherein,
First power switch includes first switch group, second switch group and third switching group, the first switch group, second
Switching group and third switching group are arranged side by side in a second direction successively, switching group respectively include along the first direction setting and
The transistor chip and diode chip for backlight unit of interconnection, the transistor chip of the first switch group and the third switching group
Transistor chip is arranged respectively close to the first assistant metal coating, and the transistor chip of the second switch group is far from described
First assistant metal coating is arranged.
2. power semiconductor modular substrate as described in claim 1, which is characterized in that further include the second bridge arm unit, it is described
Second bridge arm unit includes third power metal coating, the second assistant metal coating and the 4th work(set gradually along first direction
Rate metal backing；The third power metal coating is equipped with the second power switch, and the third power metal coating passes through described
First power switch is conductively connected with the second power metal coating, and the 4th power metal coating passes through second work(
Rate switch is conductively connected with the third power metal coating；The second assistant metal coating is applied with the third power metal
Layer, the 4th power metal coating insulation set, and connect with second power switch signal；Wherein,
Second power switch includes the 4th switching group, the 5th switching group and the 6th switching group, the 4th switching group, the 5th
Switching group and the 6th switching group are arranged side by side in a second direction successively, switching group respectively include along the first direction setting and
The transistor chip and diode chip for backlight unit of interconnection, the transistor chip of the 4th switching group and the 6th switching group
Transistor chip is arranged respectively close to the second assistant metal coating, and the transistor chip of the 5th switching group is far from described
Second assistant metal coating is arranged.
3. power semiconductor modular substrate as claimed in claim 1 or 2, which is characterized in that the transistor chip and described
Diode chip for backlight unit is respectively equipped with two groups of power electrodes, the transistor chip and the diode chip for backlight unit phase along the first direction
Mutually close one group of power electrode is for being connected with each other, the transistor chip and the diode chip for backlight unit be located remotely from each other one
The power electrode of group with power metal coating for being conductively connected.
4. power semiconductor modular substrate as described in claim 1, which is characterized in that the transistor chip is equipped with control electricity
Pole, the coordination electrode and the first switch group, second switch that the first assistant metal coating passes through the transistor chip
Group is connected with third switching group signal.
5. power semiconductor modular substrate as claimed in claim 4, which is characterized in that set on the first assistant metal coating
There is a first grid signal terminal, the coordination electrode of the transistor chip of the first switch group and the second switch group is set respectively
Rest against the side of the nearly third switching group, the coordination electrode of the transistor chip of the third switching group is disposed in proximity to described
The side of second switch group；The coordination electrode of the transistor chip of the first switch group is believed with the first assistant metal coating
Number connection, the control of the transistor chip of the coordination electrode of the transistor chip of the second switch group and the third switching group
It is connect with the first assistant metal coating signal after electrode connection.
6. power semiconductor modular substrate as claimed in claim 4, which is characterized in that on the first power metal coating with
The corresponding position of the first grid signal terminal is equipped with the first emitter coordination electrode.
7. power semiconductor modular substrate as described in claim 1, which is characterized in that the transistor chip is equipped with control electricity
Pole, the coordination electrode and the 4th switching group, the 5th switch that the second assistant metal coating passes through the transistor chip
Group is connected with the 6th switching group signal.
8. power semiconductor modular substrate as claimed in claim 7, which is characterized in that the second assistant metal coating is close
One end of 4th switching group is equipped with second grid coordination electrode, the coordination electrode of the transistor chip of the 4th switching group
It is disposed in proximity to the side of the 5th switching group, the control electricity of the transistor chip of the 5th switching group and the 6th switching group
Pole is respectively set close to the side of the 4th switching group；The coordination electrode of the transistor chip of 5th switching group with it is described
It is connect with the second assistant metal coating signal after the coordination electrode connection of the transistor chip of 4th switching group, the described 6th
The coordination electrode of the transistor chip of switching group is connect with the second assistant metal coating signal.
9. power semiconductor modular substrate as claimed in claim 7, which is characterized in that on the 4th metal backing with it is described
The corresponding position of second grid signal terminal is equipped with the second emitter signal terminal.
10. a kind of power semiconductor modular, which is characterized in that include the power semiconductor modular lining as described in claim 1-9
Bottom.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110867438A (en) * | 2019-09-30 | 2020-03-06 | 臻驱科技（上海）有限公司 | Power semiconductor module substrate |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368192A (en) * | 2001-06-08 | 2002-12-20 | Fuji Electric Co Ltd | Semiconductor device |
| JP2003142689A (en) * | 2001-11-01 | 2003-05-16 | Mitsubishi Electric Corp | Semiconductor device |
| CN104851879A (en) * | 2014-02-18 | 2015-08-19 | 赛米控电子股份有限公司 | Power semiconductor module comprising module-internal load and auxiliary connection devices of low-inductance configuration |
| CN107342313A (en) * | 2017-08-15 | 2017-11-10 | 杭州浙阳电气有限公司 | The spuious balanced substrate of gate pole and its power semiconductor modular |
| CN107546218A (en) * | 2017-08-15 | 2018-01-05 | 杭州浙阳电气有限公司 | Low spurious Inductor substrate and its power semiconductor modular |
| CN107851661A (en) * | 2015-06-23 | 2018-03-27 | Tm4股份有限公司 | The physical topological structure of power converter |
| CN108074917A (en) * | 2016-11-16 | 2018-05-25 | 南京银茂微电子制造有限公司 | A kind of semi-bridge type IGBT module of multi-chip parallel connection |
| CN208655625U (en) * | 2018-06-06 | 2019-03-26 | 臻驱科技（上海）有限公司 | A kind of power semiconductor modular substrate and power semiconductor modular |
-
2018
- 2018-06-06 CN CN201810576025.4A patent/CN108447846A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368192A (en) * | 2001-06-08 | 2002-12-20 | Fuji Electric Co Ltd | Semiconductor device |
| JP2003142689A (en) * | 2001-11-01 | 2003-05-16 | Mitsubishi Electric Corp | Semiconductor device |
| CN104851879A (en) * | 2014-02-18 | 2015-08-19 | 赛米控电子股份有限公司 | Power semiconductor module comprising module-internal load and auxiliary connection devices of low-inductance configuration |
| US20150237727A1 (en) * | 2014-02-18 | 2015-08-20 | Semikron Elektronik Gmbh & Co., Kg | Power semiconductor module comprising module-internal load and auxiliary connection devices of low-inductance configuration |
| CN107851661A (en) * | 2015-06-23 | 2018-03-27 | Tm4股份有限公司 | The physical topological structure of power converter |
| CN108074917A (en) * | 2016-11-16 | 2018-05-25 | 南京银茂微电子制造有限公司 | A kind of semi-bridge type IGBT module of multi-chip parallel connection |
| CN107342313A (en) * | 2017-08-15 | 2017-11-10 | 杭州浙阳电气有限公司 | The spuious balanced substrate of gate pole and its power semiconductor modular |
| CN107546218A (en) * | 2017-08-15 | 2018-01-05 | 杭州浙阳电气有限公司 | Low spurious Inductor substrate and its power semiconductor modular |
| CN208655625U (en) * | 2018-06-06 | 2019-03-26 | 臻驱科技（上海）有限公司 | A kind of power semiconductor modular substrate and power semiconductor modular |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110867438A (en) * | 2019-09-30 | 2020-03-06 | 臻驱科技（上海）有限公司 | Power semiconductor module substrate |
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