CN108447847A - A kind of power semiconductor modular substrate and power semiconductor modular - Google Patents
A kind of power semiconductor modular substrate and power semiconductor modular Download PDFInfo
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- CN108447847A CN108447847A CN201810576056.XA CN201810576056A CN108447847A CN 108447847 A CN108447847 A CN 108447847A CN 201810576056 A CN201810576056 A CN 201810576056A CN 108447847 A CN108447847 A CN 108447847A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 144
- 229910052751 metal Inorganic materials 0.000 claims abstract description 144
- 238000000576 coating method Methods 0.000 claims abstract description 134
- 239000011248 coating agent Substances 0.000 claims abstract description 133
- 238000009413 insulation Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims 2
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
Abstract
The invention discloses a kind of power semiconductor modular substrate and power semiconductor modulars.The power semiconductor modular substrate of the present invention, including the first bridge arm unit, the first bridge arm unit include the first power metal coating, the first assistant metal coating and the second power metal coating set gradually along first direction；Second power metal coating is equipped with the first power switch；Wherein, first switch group, second switch group, third switching group and the 4th switching group of first power switch are arranged side by side in a second direction successively, the transistor chip of first switch group and the transistor chip of third switching group are arranged respectively close to the first assistant metal coating, and the transistor chip of the transistor chip of second switch group and the 4th switching group is respectively further from the setting of the first assistant metal coating.The power semiconductor modular substrate and power semiconductor modular of the present invention can reduce the stray parameter between the thermal coupling degree between each chip of power switch, each chip that equal power switchs.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of power semiconductor modular substrates and power semiconductor mould
Block.
Background technology
The through-current capability of single power semiconductor chip is limited, is the power handling capability of extended power semiconductor module,
The mode of generally use multi-chip parallel connection forms bridge arm switch inside the power semiconductor modular of large capacity.It is switched in each bridge arm
In, to realize the two-way flow of electric current or reducing loss, chip generally use in parallel can be controlled it by coordination electrode and switch shape
The transistor chip of state and diode chip for backlight unit with one-way conduction ability, wherein transistor chip and diode chip for backlight unit are at it
Power electrode is in parallel.
For the transistor chip with coordination electrode, the chip drives inside the power semiconductor modular with 4 chips
The layout of circuit is as shown in Figure 1.Transistor chip 120 and diode chip for backlight unit 130 divide two rows of arrangements, similar chip to be arranged in a row
It is interior.The advantages of this arrangement is：Connect the auxiliary of the signal terminal 121 and power semiconductor modular of transistor chip 120
Attachment device 140 (binding line) length of metal backing 110 is consistent, and stray parameter caused by capable of reducing attachment device 140 is not
Equal degree.Since the stray parameter of attachment device accounts for the ratio of total stray parameter in the chip drives circuit of power semiconductor modular
Larger, therefore, this layout type is capable of the stray parameter of balancing chip driving circuit.
But this layout type is to reduce stray parameter unevenness degree caused by grid assistant metal coating, it can as possible
Reduce chip chamber away from.And in power semiconductor modular operational process, because the working condition of similar chip is identical, can generate simultaneously
Heat, smaller chip chamber is away from that can increase chip chamber thermal coupling degree, to limit the maximum work output of power semiconductor modular
Rate.In addition, it is also possible under the malfunctions such as overcurrent, increase the maximum junction temperature of chip, influence the reliable of power semiconductor modular
Property.
Therefore, for the thermal coupling degree of the transistor chip of existing power semiconductor modular, big, stray parameter differs
A kind of the problem of cause, it is desirable to provide power half for the stray parameter that there is low-heat degree of coupling and be capable of balanced transistor-resistor logic chip
Conductor module substrate and power semiconductor modular.
Invention content
To solve the above problems, a kind of power semiconductor modular substrate of present invention offer and power semiconductor modular, work(
The layout type of rate switch can reduce thermal coupling degree between each chip of power switch, equal power switch it is each
Stray parameter between chip improves the reliability and output power of power semiconductor modular.
To achieve the above object, the present invention provides a kind of power semiconductor modular substrate, including the first bridge arm unit,
One bridge arm unit includes the first power metal coating, the first assistant metal coating and the second power set gradually along first direction
Metal backing；Second power metal coating be equipped with the first power switch, the first power metal coating by the first power switch with
Second power metal coating is conductively connected；First assistant metal coating and the first power metal coating, the second power metal coating
Insulation set, and connect with the first power switch signal；Wherein,
First power switch includes first switch group, second switch group, third switching group and the 4th switching group, first switch
Group, second switch group, third switching group and the 4th switching group are arranged side by side in a second direction successively, and switching group is respectively included along
The transistor chip and diode chip for backlight unit that one direction is arranged and is connected with each other, the transistor chip and third of first switch group are opened
The transistor chip of pass group is arranged respectively close to the first assistant metal coating, the transistor chip of second switch group and the 4th switch
The transistor chip of group is respectively further from the setting of the first assistant metal coating.
Further, further include the second bridge arm unit, the second bridge arm unit includes the third set gradually along first direction
Power metal coating, the second assistant metal coating and the 4th power metal coating；Third power metal coating is equipped with the second power
Switch, third power metal coating are conductively connected by the first power switch and the second power metal coating, the 4th power metal
Coating is conductively connected by the second power switch and third power metal coating；Second assistant metal coating and third power metal
Coating, the 4th power metal coating insulation set, and connect with the second power switch signal；Wherein,
Second power switch includes the 5th switching group, the 6th switching group, the 7th switching group and the 8th switching group, the 5th switch
Group, the 6th switching group, the 7th switching group and the 8th switching group are arranged side by side in a second direction successively, and switching group is respectively included along
The transistor chip and diode chip for backlight unit that one direction is arranged and is connected with each other, the transistor chip and the 7th of the 5th switching group are opened
The transistor chip of pass group is arranged respectively close to the second assistant metal coating, the transistor chip of the 6th switching group and the 8th switch
The transistor chip of group is respectively further from the setting of the second assistant metal coating.
Further, transistor chip and diode chip for backlight unit are respectively equipped with two groups of power electrodes, transistor along first direction
Chip and the power terminal of diode chip for backlight unit one end close to each other are for being connected with each other, transistor chip and diode chip for backlight unit phase
The power terminal of mutual separate one end with power metal coating for being conductively connected.
Further, transistor chip is equipped with coordination electrode, the control that the first assistant metal coating passes through transistor chip
Electrode is connect with first switch group, second switch group, third switching group and the 4th switching group signal.
Further, the first assistant metal coating is equipped with first grid signal terminal, first switch group and second switch
The coordination electrode of the transistor chip of group is oppositely arranged respectively, the control of the transistor chip of third switching group and the 4th switching group
Electrode is oppositely arranged respectively；The control of the coordination electrode of the transistor chip of second switch group and the transistor chip of first switch group
It is connect with the first assistant metal coating signal after electrode connection processed；The coordination electrode and third of the transistor chip of 4th switching group
It is connect with the first assistant metal coating signal after the coordination electrode connection of the transistor chip of switching group.
Further, position corresponding with the first control terminal is equipped with the first emitter signal on the first power metal coating
Terminal.
Further, transistor chip is equipped with coordination electrode, the control that the second assistant metal coating passes through transistor chip
Electrode is connect with the 5th switching group, the 6th switching group, the 7th switching group and the 8th switching group signal.
Further, the second assistant metal coating is equipped with second grid signal terminal, the 5th switching group and the 6th switch
The coordination electrode of the transistor chip of group is oppositely arranged respectively, the control of the transistor chip of the 7th switching group and the 8th switching group
Electrode is oppositely arranged respectively；The control of the coordination electrode of the transistor chip of 6th switching group and the transistor chip of the 5th switching group
It is connect with the second assistant metal coating signal after electrode connection processed, the coordination electrode and the 7th of the transistor chip of the 8th switching group
It is connect with the first assistant metal coating signal after the coordination electrode connection of the transistor chip of switching group.
Further, position corresponding with the second control terminal is equipped with the second emitter signal end on the 4th metal backing
Son.
The present invention also provides a kind of power semiconductor modulars, including above-mentioned power semiconductor modular substrate.
The power semiconductor modular substrate and power semiconductor modular of the present invention, the power switch of each of which bridge arm unit
Transistor chip and semiconductor chip in four groups of switching groups are alternately arranged, work(that can be in parallel in efficient balance switching process
The power current of each chip of rate switch, reduces the thermal coupling degree between each chip of power switch, equal power is opened
Stray parameter between each chip closed carries to reduce false triggering risk of the power semiconductor modular in high-speed switch
High power semi-conductor module operational reliability, and improve the output power of power semiconductor modular.
Description of the drawings
Fig. 1 is the structural schematic diagram of prior art power semiconductor modular substrate；
Fig. 2 is the structural schematic diagram of power semiconductor modular substrate of the present invention；
Fig. 3 is the arrangement architecture figure of the power switch of the first bridge arm unit of the invention；
Fig. 4 is the arrangement architecture figure of the power switch of the second bridge arm unit of the invention.
Specific implementation mode
In the following, in conjunction with attached drawing, structure and operation principle to the present invention etc. are further described.
As in Figure 2-4, an embodiment of the present invention provides a kind of power semiconductor modular substrates, including the first bridge arm unit
With the second bridge arm unit.Wherein, the first bridge arm unit includes that (first direction is the side in Fig. 2-4 from top to bottom along first direction
To) the first power metal coating 210, the first assistant metal coating 230 and the second power metal coating 220 that set gradually.The
One power metal coating 210 is equipped with the first engraved structure close to the side of the second power metal coating 220, and the first assistant metal applies
Layer 230 is located in the first engraved structure.First assistant metal coating 230 and the first power metal coating 210, the second power metal
220 insulation set of coating.Second bridge arm unit includes the third power metal coating 240, second set gradually along first direction
Assistant metal coating 260 and the 4th power metal coating 250.4th power metal coating 250 is close to third power metal coating
240 side is equipped with the second engraved structure, and the second assistant metal coating 260 is located in the second engraved structure.Second assistant metal
Coating 260 and third power metal coating 240,250 insulation set of the 4th power metal coating.First power metal coating 210
It is equipped with the leading-out terminal 211 of power current, is set respectively on the second power metal coating 220 and the 4th power metal coating 250
There is the input terminal 221,251 of power current.
As Figure 2-3, in embodiments of the present invention, the first power switch is equipped on the second power metal coating 220,
First power metal coating 210 is conductively connected by the first power switch and the second power metal coating 220.First assistant metal
Coating 230 is connect with the first power switch signal, the working condition for controlling the first power switch controls the first power and opens
It closes and is in forward blocking pattern in forward conduction mode.
Specifically, the first power switch includes first switch group 271, second switch group 272, third switching group 273 and
Four switching groups 274, first switch group 271, second switch group 272, third switching group 273 and the 4th switching group 274 are successively along
Two directions (second direction is the direction in Fig. 2-4 from left to right) are arranged side by side, and include a pair of along first in every group of switching group
The transistor chip 2711,2721,2731,2741 and diode chip for backlight unit 2712,2722 that direction is arranged and is connected with each other,
2732,2742.Wherein, the transistor chip 2711 of first switch group 271 and the transistor chip 2731 of third switching group 273 divide
It is not arranged close to the first assistant metal coating 230, the transistor chip 2721 of second switch group 272 and the 4th switching group 274
Transistor chip 2741 is respectively further from the setting of the first assistant metal coating 230.2712 He of diode chip for backlight unit of first switch group 271
The diode chip for backlight unit 2732 of third switching group 273 is respectively further from the setting of the first assistant metal coating 230, second switch group 272
Diode chip for backlight unit 2722 and the diode chip for backlight unit 2742 of the 4th switching group 274 are arranged respectively close to the first assistant metal coating 230.
As shown in Figure 2,4, in embodiments of the present invention, third power metal coating 240 passes through the first power switch and
Two power metal coatings 220 are conductively connected.Third power metal coating 240 is equipped with the second power switch, and the 4th power metal is applied
Layer 250 is conductively connected by the second power switch and third power metal coating 240.Second assistant metal coating 260 and second
Power switch signal connects, the working condition for controlling the second power switch controls the second power switch and is in positive guide
Logical pattern is in forward blocking pattern.
Specifically, the arrangement architecture of the second power switch is identical and arranged symmetrically as the arrangement architecture of the first power switch.
Second power switch include the 5th switching group 281, the 6th switching group 282, the 7th switching group 283 and the 8th switching group 284, the 5th
Switching group 281, the 6th switching group 282, the 7th switching group 283 and the 8th switching group 284 are arranged side by side in a second direction successively, often
It include a pair of transistor chip 2811,2821,2831,2841 for being arranged and being connected with each other along first direction in group switching group
With diode chip for backlight unit 2812,2822,2832,2842.Wherein, the transistor chip 2811 and the 7th of the 5th switching group 281 switchs
The transistor chip 2831 of group 283 is arranged respectively close to the second assistant metal coating 260, the crystal tube core of the 6th switching group 282
Piece 2821 and the transistor chip 2841 of the 8th switching group 284 are respectively further from the setting of the second assistant metal coating 260.5th switch
The diode chip for backlight unit 2812 of group 281 and the diode chip for backlight unit 2832 of the 7th switching group 283 are respectively further from the second assistant metal coating
260 settings, the diode chip for backlight unit 2822 of the 6th switching group 282 and the diode chip for backlight unit 2842 of the 8th switching group 284 respectively close to
Second assistant metal coating 260 is arranged.
Since the power switch of single bridge arm unit is under general work pattern, transistor chip in every group of switching group and
Diode chip for backlight unit connected to it will not simultaneously turn on electric current, and the transistor chip in every group of switching group will not with diode chip for backlight unit
Generate heat simultaneously.Therefore, this arrangement architecture can be between each transistor chip by increasing each power switch
Spacing between each diode chip for backlight unit reduces the thermal coupling between each diode chip for backlight unit between each transistor chip
Degree, the temperature of balanced each chip, improves the power density and operational reliability of power semiconductor modular.
In embodiments of the present invention, transistor chip 2711,2721,2731,2741,2811,2821,2831,2841 Hes
The upper surface of diode chip for backlight unit 2712,2722,2732,2742,2812,2822,2832,2842 is respectively equipped with two along first direction
Group power electrode, transistor chip 2711,2721,2731,2741,2811,2821,2831,2841 and diode chip for backlight unit 2712,
2722,2732,2742,2812,2822,2832,2,842 one group of power electrodes close to each other are for being connected with each other, mutually
One group separate of power electrode with power metal coating for being conductively connected.Specifically, transistor chip 2711,2721,
2731,2741,2811,2821,2831,2841 and diode chip for backlight unit 2712,2722,2732,2742,2812,2822,2832,
2842, power metal coating and transistor chip 2711,2721,2731,2741,2811,2821,2831,2841 or diode
Chip 2712,2722,2732,2742,2812,2822,2832,2842 is connected by attachment device 292 respectively.Wherein, it connects
Device 292 can be binding line.At this point, the first power metal coating 210 forms the first power potential area, the second power metal is applied
Floor 220 forms the second power potential area, and third power metal coating 240 forms third power potential area, and the 4th power metal is applied
Floor 250 forms the 4th power potential area, and the first assistant metal coating 230 and the second assistant metal coating 260 are respectively formed auxiliary
Potential area.
In embodiments of the present invention, transistor chip 2711,2721,2731,2741,2811,2821,2831,2841 points
Not She You coordination electrode 291, as in Figure 2-4, the first assistant metal coating 230 by transistor chip 2711,2721,
2731,2741 coordination electrode 291 and first switch group 271, second switch group 272, third switching group 273 and the 4th switching group
274 signals connect.The coordination electrode 291 that second assistant metal coating 260 passes through transistor chip 2811,2821,2831,2841
It is connect with the 5th switching group 281, the 6th switching group 282, the 7th switching group 283 and 284 signal of the 8th switching group.
Wherein, the first assistant metal coating 230 is equipped with first grid signal terminal 231, first grid signal terminal 231
It is set to along the first direction position opposite with the 4th switching group 274, the crystal of first switch group 271 and second switch group 272
The coordination electrode 291 of tube chip 2711,2721 is oppositely arranged respectively, the transistor of third switching group 273 and the 4th switching group 274
The coordination electrode 291 of chip 2731,2741 is oppositely arranged respectively.Second assistant metal coating 260 is equipped with second grid signal
Terminal 261, second grid signal terminal 261 are set to along the first direction position opposite with the 6th switching group 282, the 5th switch
The transistor chip 2811 of group 281 and the 6th switching group 282,2821 coordination electrode 291 are oppositely arranged respectively, the 7th switching group
283 and the 8th the coordination electrode 291 of transistor chip 2831,2841 of switching group 284 be oppositely arranged respectively.First grid signal
Terminal 231 and second grid signal terminal 261 are respectively used to connection grid signal.
Specifically, the crystalline substance of the coordination electrode 291 and first switch group 271 of the transistor chip 2721 of second switch group 272
The coordination electrode 291 of body tube chip 2711 is connect after connecting with 230 signal of the first assistant metal coating, i.e., the order of connection is followed successively by
First assistant metal coating 230, first switch group 271 transistor chip 2711 coordination electrode 291, second switch group 272
Transistor chip 2721 coordination electrode 291.The coordination electrode 291 of the transistor chip 2741 of 4th switching group 274 and
The coordination electrode 291 of the transistor chip 2731 of three switching groups 273 is golden with the first auxiliary after being connected by unified connecting device 292
Belong to 230 signal of coating connection, i.e., the order of connection be followed successively by the first assistant metal coating 230, third switching group 273 crystal tube core
The coordination electrode 291 of the coordination electrode 291 of piece 2731, the transistor chip 2741 of the 4th switching group 274.6th switching group 282
Transistor chip 2821 coordination electrode 291 and the coordination electrode 291 of the transistor chip 2811 of the 5th switching group 281 pass through
Unified connecting device 292 is connect after connecting with 260 signal of the second assistant metal coating, i.e., the order of connection is followed successively by the second auxiliary gold
Belong to coating 260, the coordination electrode 291 of transistor chip 2811 of the 5th switching group 281, the 6th switching group 282 crystal tube core
The coordination electrode 291 of piece 2821.The coordination electrode 291 and the 7th switching group 283 of the transistor chip 2841 of 8th switching group 284
Transistor chip 2831 coordination electrode 291 by unified connecting device 292 connect after with the first assistant metal coating 230 believe
Number connection, i.e., the order of connection be followed successively by the second assistant metal coating 260, the 7th switching group 283 transistor chip 2831 control
Electrode 291 processed, the six or eight switching group transistor chip 2841 coordination electrode 291.
In embodiments of the present invention, attachment device 292 can be binding line, in order to make the length of binding line as possible
Short, to reduce stray parameter, coordination electrode 291 is connect with the first assistant metal coating 230 or the second assistant metal coating 260
Binding line should be arranged along first direction as possible, at this point, the two of the first assistant metal coating 230 and the second assistant metal coating 260
End should at least extend to and 291 face of coordination electrode of two transistor chips positioned at outside of each power switch as possible
Position.It regard the coordination electrode 291 of each two adjacent transistor chip as one group, passes through the transistor positioned inside after series connection
The coordination electrode 291 of chip is connect with assistant metal coating, can reduce the length of metal backing, and reduces the crystal at both ends
The length for the connecting line that tube chip is connect with power metal coating, the stray parameter of driving circuit between balanced parallel chip.
In embodiments of the present invention, position corresponding with first grid signal terminal 231 on the first power metal coating 210
Equipped with the first emitter signal terminal 212, for connecting emitter signal.On 4th metal backing with second grid signal terminal
261 corresponding positions are equipped with the second emitter signal terminal 252, for connecting emitter signal.Wherein, the first emitter signal
Terminal 212 should be arranged close proximity to first grid signal terminal 231, and the second emitter signal terminal 252 should be close proximity to second
Grid signal terminal 261 is arranged.
The embodiment of the present invention additionally provides a kind of power semiconductor modular, includes the power semiconductor mould of the embodiment of the present invention
Block substrate.
More than, schematic description only of the invention, it will be recognized by those skilled in the art that in the work without departing from the present invention
On the basis of making principle, a variety of improvement can be made to the present invention, this is all belonged to the scope of protection of the present invention.
Claims (10)
1. a kind of power semiconductor modular substrate, which is characterized in that including the first bridge arm unit, first bridge arm unit includes
The first power metal coating, the first assistant metal coating and the second power metal coating set gradually along first direction；It is described
Second power metal coating is equipped with the first power switch, and the first power metal coating passes through first power switch and institute
The second power metal coating is stated to be conductively connected；The first assistant metal coating and the first power metal coating, described the
Two power metal coating insulation sets, and connect with first power switch signal；Wherein,
First power switch includes first switch group, second switch group, third switching group and the 4th switching group, and described first
Switching group, second switch group, third switching group and the 4th switching group are arranged side by side in a second direction successively, and switching group respectively includes
The transistor chip and diode chip for backlight unit for being arranged and being connected with each other along the first direction, the transistor of the first switch group
Chip and the transistor chip of the third switching group are arranged respectively close to the first assistant metal coating, the second switch
The transistor chip of group and the transistor chip of the 4th switching group are respectively further from the first assistant metal coating setting.
2. power semiconductor modular substrate as described in claim 1, which is characterized in that further include the second bridge arm unit, it is described
Second bridge arm unit includes third power metal coating, the second assistant metal coating and the 4th work(set gradually along first direction
Rate metal backing；The third power metal coating is equipped with the second power switch, and the third power metal coating passes through described
First power switch is conductively connected with the second power metal coating, and the 4th power metal coating passes through second work(
Rate switch is conductively connected with the third power metal coating；The second assistant metal coating is applied with the third power metal
Layer, the 4th power metal coating insulation set, and connect with second power switch signal；Wherein,
Second power switch include the 5th switching group, the 6th switching group, the 7th switching group and the 8th switching group, the described 5th
Switching group, the 6th switching group, the 7th switching group and the 8th switching group are arranged side by side in a second direction successively, and switching group respectively includes
The transistor chip and diode chip for backlight unit for being arranged and being connected with each other along the first direction, the transistor of the 5th switching group
Chip and the transistor chip of the 7th switching group are arranged respectively close to the second assistant metal coating, the 6th switch
The transistor chip of group and the transistor chip of the 8th switching group are respectively further from the second assistant metal coating setting.
3. power semiconductor modular substrate as claimed in claim 1 or 2, which is characterized in that the transistor chip and described
Diode chip for backlight unit is respectively equipped with two groups of power electrodes, the transistor chip and the diode chip for backlight unit phase along the first direction
Mutually close one group of power electrode is for being connected with each other, the transistor chip and the diode chip for backlight unit be located remotely from each other one
The power electrode of group with power metal coating for being conductively connected.
4. power semiconductor modular substrate as described in claim 1, which is characterized in that the transistor chip is equipped with control electricity
Pole, the coordination electrode and the first switch group, second switch that the first assistant metal coating passes through the transistor chip
Group, third switching group are connected with the 4th switching group signal.
5. power semiconductor modular substrate as claimed in claim 4, which is characterized in that set on the first assistant metal coating
There is a first grid signal terminal, the coordination electrode of the transistor chip of the first switch group and the second switch group distinguishes phase
To setting, the coordination electrode of the transistor chip of the third switching group and the 4th switching group is oppositely arranged respectively；It is described
After the coordination electrode of the transistor chip of second switch group is connect with the coordination electrode of the transistor chip of the first switch group
It is connect with the first assistant metal coating signal；The coordination electrode of the transistor chip of 4th switching group and the third
It is connect with the first assistant metal coating signal after the coordination electrode connection of the transistor chip of switching group.
6. power semiconductor modular substrate as claimed in claim 4, which is characterized in that on the first power metal coating with
The corresponding position of first control terminal is equipped with the first emitter signal terminal.
7. power semiconductor modular substrate as described in claim 1, which is characterized in that the transistor chip is equipped with control electricity
Pole, the coordination electrode and the 5th switching group, the 6th switch that the second assistant metal coating passes through the transistor chip
Group, the 7th switching group are connected with the 8th switching group signal.
8. power semiconductor modular substrate as claimed in claim 7, which is characterized in that set on the second assistant metal coating
There is a second grid signal terminal, the coordination electrode of the transistor chip of the 5th switching group and the 6th switching group distinguishes phase
To setting, the coordination electrode of the transistor chip of the 7th switching group and the 8th switching group is oppositely arranged respectively；Described 6th
The coordination electrode of the transistor chip of switching group connect with the coordination electrode of the transistor chip of the 5th switching group after with institute
The connection of the second assistant metal coating signal is stated, the coordination electrode of the transistor chip of the 8th switching group is switched with the described 7th
It is connect with the first assistant metal coating signal after the coordination electrode connection of the transistor chip of group.
9. power semiconductor modular substrate as claimed in claim 7, which is characterized in that on the 4th metal backing with it is described
The corresponding position of second control terminal is equipped with the second emitter signal terminal.
10. a kind of power semiconductor modular, which is characterized in that include the power semiconductor modular lining as described in claim 1-9
Bottom.
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