CN105931998B - A kind of insulating substrate structure and the power module using the substrate - Google Patents
A kind of insulating substrate structure and the power module using the substrate Download PDFInfo
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- CN105931998B CN105931998B CN201610435605.2A CN201610435605A CN105931998B CN 105931998 B CN105931998 B CN 105931998B CN 201610435605 A CN201610435605 A CN 201610435605A CN 105931998 B CN105931998 B CN 105931998B
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- bridge arm
- metal layer
- insulating substrate
- lower bridge
- chip unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses the power modules of a kind of insulating substrate structure and the use substrate, insulating substrate includes ceramic insulating layer and the metal layer that is formed on the ceramic insulating layer, the metal layer includes upper bridge arm metal layer and lower bridge arm metal layer, upper bridge arm metal layer is equipped with upper bridge arm chip unit, lower bridge arm metal layer is equipped with lower bridge arm chip unit, lower bridge arm metal layer includes Wiring area, upper bridge arm chip unit is connected with Wiring area by bonding line, and lower bridge arm metal layer is equipped with the equalizing tank of insulation between Wiring area and lower bridge arm chip unit.The present invention can protect the power device close to DC input terminal; reduce the risk that device is burnt by overload; the balanced parasitic parameter of devices in parallel; especially parasitic inductance and loop resistance; to achieve the effect that flow; it avoids certain devices to burn because of overcurrent, improves the reliability of power module.
Description
Technical field
The present invention relates to the power moulds of power semiconductor modular more particularly to a kind of insulating substrate structure and the use substrate
Block.
Background technology
It is energy saving that the threat of global energy crisis and climate warming allows people increasingly to pay attention to while pursuing economic development
Emission reduction, low carbon development.With environmentally protective establishment and propulsion in the world, the development of power semiconductor, application prospect are more
It is wide.
The power grade of current power module is continuously improved, although the electric current of power device, voltage class constantly carry now
Rise, but single power device still cannot be satisfied the demand of high-power converter, then power module internal components and be unified into
A kind of equal flow problem for inevitable choice, and multiple devices in parallel also highlights therewith.Existing all half-bridge knots of power module
Structure two DC input terminals of connection, and the location layout difference due to power device inside power module jointly, often
Cause the parasitic parameter of multiple devices in parallel inconsistent.At work, parasitic parameter difference can cause devices in parallel to power module
By electric current it is inconsistent, by the larger chip of electric current it is possible that overcurrent burns failure, even if overcurrent is not caused to burn
Ruin, the loss of this chip also can bigger, fever than more serious, the reliability of long-term so power module can also be affected.
Invention content
Goal of the invention：In view of the above-mentioned drawbacks of the prior art, the present invention is intended to provide a kind of improvement parallel chip is equal
The insulating substrate structure of fluidity and the power module for using the substrate, the parasitic parameter of balanced parallel chip improve power module
Reliability.
Technical solution：A kind of insulating substrate structure, including ceramic insulating layer and the gold that is formed on the ceramic insulating layer
Belong to layer, the metal layer includes upper bridge arm metal layer and lower bridge arm metal layer, and upper bridge arm metal layer is equipped with upper bridge arm chip list
Member, lower bridge arm metal layer be equipped with lower bridge arm chip unit, lower bridge arm metal layer includes Wiring area, upper bridge arm chip unit with connect
Line area is connected by bonding line, and lower bridge arm metal layer is equipped with the equalizing tank of insulation between Wiring area and lower bridge arm chip unit.
Further, the equalizing tank originates in the edge of the lower bridge arm metal layer close to DC input terminal, to separate
The direction of DC input terminal extends.
Further, the extending direction of the equalizing tank is vertical with the bonding direction of bonding line.
Further, the lower bridge arm chip unit includes the power device of multiple parallel connections, the most short extension of the equalizing tank
Extremely concordant with the top of first power device, longest extends to concordant with the top of the last one power device.
Further, the equalizing tank is single hop insulation tank or multistage insulation tank.
Further, the material of the upper bridge arm chip unit is one or more, the lower bridge arm core in Si, SiC and GaN
The material of blade unit is one or more in Si, SiC and GaN.
Further, the chip type of the upper bridge arm chip unit is one kind or more in IGBT, MOSFET and FRD
Kind, the chip type of lower bridge arm chip unit is one or more in IGBT, MOSFET and FRD.
A kind of power module uses any of the above-described kind of insulating substrate structure.
Further, include the half-bridge structure of DC input terminal, leading-out terminal and multiple parallel connections, half-bridge structure includes exhausted
Chip set on edge substrate and insulating substrate, each half-bridge structure are separately connected two DC input terminals and an output end
The lower bridge arm metal layer of son, at least one insulating substrate is equipped with the balanced of insulation between Wiring area and lower bridge arm chip unit
Slot.
Further, including tactic three half-bridge structures, each half-bridge structure include an insulating substrate, are located at
Its lower bridge arm metal layer of one insulating substrate of centre is equipped with the equalizing tank of insulation between Wiring area and lower bridge arm chip unit.
Further, including transversely arranged three half-bridge structures, each half-bridge structure include that two of longitudinal arrangement are exhausted
Edge substrate, its lower bridge arm metal layer of close three insulating substrates of a line of DC input terminal is in Wiring area and lower bridge arm chip list
The equalizing tank of insulation is equipped between member.
Further, including two half-bridge structures, each half-bridge structure includes an insulating substrate, each insulating substrate its
Lower bridge arm metal layer is equipped with the equalizing tank of insulation between Wiring area and lower bridge arm chip unit.
Advantageous effect：The present invention is equipped with equalizing tank on insulating substrate, can protect the power close to DC input terminal
Device reduces the risk that device is burnt by overload；In addition, the power module of the present invention makes half-bridge structure direct-flow input end each other
It is independent, reduce input resistance, is convenient for the installation of filter.It is defeated that the present invention using each half-bridge structure is separately connected two direct currents
The structure for entering terminal and a leading-out terminal, avoiding all half-bridge structures of existing power module, two direct currents of connection are defeated jointly
Enter terminal, protects the power device close to DC input terminal, solve the half-bridge structure farther out apart from DC input terminal
Input resistance it is bigger than normal and can not separately installed filter capacitor the problem of.The parasitic parameter of devices in parallel of the invention balanced,
Especially parasitic inductance and loop resistance reduce the risk that device is burnt by overload, improve to achieve the effect that flow
The reliability of power module.
Description of the drawings
Fig. 1 is the structural schematic diagram of insulating substrate of the present invention；
Fig. 2 (a), Fig. 2 (b), Fig. 2 (c) are three kinds of different insulating substrate structural schematic diagrams；
Fig. 3 is different the parasitic inductance comparison diagram that insulating substrate extracts；
Fig. 4 is MOSFET three-phase bridge power module schematic diagrames；
Fig. 5 is three-phase bridge MOSFET power module electrical structure topological diagrams；
Fig. 6 is MOSFET power module schematic diagrames；
Fig. 7 is the electrical structure topological diagram of embodiment 3；
Fig. 8 is IGBT three-phase bridge power module schematic diagrames.
Specific implementation mode
The technical program is described in detail below in conjunction with the accompanying drawings.
Embodiment 1：
A kind of insulating substrate structure, and using the power module of the structure, insulating substrate structure is as shown in Figure 1, including pottery
The material of porcelain insulating layer and the metal layer being formed on the ceramic insulating layer, metal layer uses copper or aluminium, and surface is coated with nickel
With gold or nickel and silver, metal layer is realized by thick film printing technique or soldering tech, thickness 0.1mm-1mm.
Metal layer includes upper bridge arm metal layer 1 and lower bridge arm metal layer 2, is sintered or is welded on upper bridge arm metal layer 1
Bridge arm chip unit 3, is sintered or is welded with lower bridge arm chip unit 4 on lower bridge arm metal layer 2, and lower bridge arm metal layer 2 includes connecing
Line area 5, upper bridge arm chip unit 3 are connected with Wiring area 5 by bonding line 6, and alleged bonding line 6 is English bonding below
Translation, Wiring area 5 is as shown, nation's line of i.e. upper bridge arm chip unit 3 is connected to where lower bridge arm chip unit 4 base that insulate
Region on plate, nation's line of this field is horizontally-parallel arrangement shown in figure under normal circumstances, Wiring area 5 be these nation's lines with
The set of the contact point of lower bridge arm chip is formed by region, and lower bridge arm metal layer 2 is in Wiring area 5 and lower bridge arm chip unit 4
Between be equipped with the equalizing tank 7 for realizing electrical balanced purpose insulation, equalizing tank 7 is that metal layer is formed by the technique of etching.
Voltage, the current class of power module are continuously improved, but one single chip often cannot be satisfied requirement, therefore each bridge
Arm is typically to carry out parallel connection by multiple chips.In the present embodiment, a bridge arm is composed in parallel by 7 power devices, such as institute in Fig. 1
Show, 7 power device groups of the shared arrangement of sequence from top to bottom of upper and lower bridge arm, 7 dotted line frames i.e. 7 power device groups in figure.
Power device usually closer from direct-flow input end position is easiest to fail, the reason is that the parasitic inductance in this power device circuit is most
It is small, for the parasitic inductance in balanced parallel chip circuit, two kinds of insulating substrate structures are now devised to improve the equal of parallel chip
Stream, equalizing tank 7 can balance the parasitic inductance between chipset, but unsuitable long as a measure for adjusting parasitic parameter,
The reason is that equalizing tank 7 increases loop resistance, it can accordingly increase the quiescent dissipation of power module.
Insulation tank equivalent width of the width of equalizing tank 7 generally with insulating metal substrate upper surface layers of copper is 0.6-
1.2mm, lower bridge arm chip unit 4 include the power device of multiple parallel connections, and equalizing tank 7 originates in close to DC input terminal 8
The edge of lower bridge arm metal layer 2 extends to the direction far from DC input terminal 8, most short to extend to and first power device
Top it is concordant, longest extend at the top of concordant with the top of the last one power device, described herein power device be with
Insulating substrate placement position shown in figure is reference, i.e., insulating substrate is top close to one end of DC input terminal 8, if
The placing direction of insulating substrate becomes, and " top " above-mentioned is still kept to be top close to one end of DC input terminal 8, not by regarding
The restriction at angle and placing direction；Also, 7 power devices are longitudinally ranked sequentially in the present embodiment, if in other embodiments,
Multiple power devices do not form a line, but arrange in matrix or other modes, then aforementioned " longest extends to and the last one work(
The top of rate device is concordant " in " the last one power device " refer near Wiring area 5 one row in it is defeated apart from direct current
Enter a farthest power device of terminal 8.
The optimization length of equalizing tank 7 is related with chip position and quantity, and equalizing tank 7 is that single hop insulation tank or multistage are exhausted
Edge slot.It is tested in conjunction with specific power module in the present embodiment, Fig. 2 (a) is the insulating substrate of the prior art, without electrical equal
The equalizing tank 7 for the purpose that weighs, there are one the equalizing tanks 7 of electrical balanced purpose for the insulating substrate of Fig. 2 (b)；Its equalizing tank 7 extend to by
It is closely concordant with the bottom edge of second power device of lower bridge arm；The insulating substrate of Fig. 2 (c) has that one is long and the other is short two electrical balanced mesh
Equalizing tank 7, long equalizing tank 7 extended to from top it is nearly concordant with the bottom edge of the power device of second lower bridge arm, it is short
The length of weighing apparatus slot 7 is less than the length of first equalizing tank 7, and short equalizing tank 7 prolongs from the top of the third power device of lower bridge arm
Extend to the medium position of the third power device of lower bridge arm.
In order to verify the effect of the electrically equalizing tank 7 of balanced purpose, numerical value is now carried out respectively to above-mentioned three kinds of insulating substrates
Emulation, extraction obtains the parasitic inductance of different capacity device group, as shown in figure 3, not doing equalizing tank 7 on insulating metal substrate
When, in 7 power devices, closer from direct-flow input end its parasitic inductance of power device group is smaller, and the power device group is also most
It is easy failure；When metal layer is etched with long equalizing tank 7, the parasitic inductance of third power device group is minimum, but first three work(
The parasitic inductance of rate device group is not much different；Improve as further, is further added by the length direction of long equalizing tank 7 one short
Weigh slot 7, and the parasitic inductance of first three power device group is more nearly at this time, and stream effect is more preferable, the power mould in the present embodiment
Block is using 7 structure of single hop equalizing tank shown in Fig. 2 (b).
The extending direction of equalizing tank 7 is vertical with the bonding direction of bonding line 6, and as shown in Fig. 2 (b), equalizing tank 7 is vertical
To the bonding direction of bonding line 6 is that laterally, the bonding direction of signified bonding line 6 is theoretically the approximation of bonding line 6 herein
Direction, approximately by the line side at 6 both ends of bonding line if bonding line 6 is bent because of its own physical characteristic in practical operation
To the bonding direction being interpreted as described in the claims in the present invention, subtle deformation, bending or inclination are not as to this hair
The limitation of bright protection domain.
A kind of power module using above-mentioned insulating substrate structure, as shown in figure 4, including DC input terminal 8, output end
Son 9 and three half-bridge structures in parallel, three half-bridge structures are ranked sequentially, and each half-bridge structure includes insulating substrate and insulation base
Chip set on plate, every piece of insulating substrate is a half-bridge topology electrical structure in the present embodiment, as shown in figure 5, each
Half-bridge structure is separately connected two DC input terminals 8 and a leading-out terminal 9, six direct currents that three half-bridge structures are connected
8 one word of input terminal is arranged, and three half-bridge structures form three-phase bridge electric topology structure.It is three pieces of insulating substrates, chip set, outer
Shell, bottom plate form three-phase bridge power module.As shown in figure 4, every piece of insulating substrate includes two bridge arms, power module includes six altogether
A bridge arm, each bridge arm are composed in parallel by 7 power chips.The emitter of upper bridge arm chip unit 3 or drain electrode are drawn by bonding
Line is connected with the collector of lower bridge arm chip unit 4 or source electrode.
The lower bridge arm metal layer 2 of at least one insulating substrate is equipped with insulation between Wiring area 5 and lower bridge arm chip unit 4
Equalizing tank 7, in the present embodiment, equalizing tank 7 is designed on three insulating substrates.
Wherein, the material of the upper bridge arm chip unit 3 of insulating substrate is one or more, the lower bridge in Si, SiC and GaN
The material of arm chip unit 4 is one or more in Si, SiC and GaN；7 structure of equalizing tank of the present invention is suitable for
The power module of high-speed switch is particularly suitable for SiC power modules.The chip type of upper bridge arm chip unit 3 be IGBT,
One or more in MOSFET and FRD, the chip type of lower bridge arm chip unit 4 is one kind in IGBT, MOSFET and FRD
Or it is a variety of.In the present embodiment, the chip type of upper bridge arm chip unit 3 and lower bridge arm chip unit 4 is MOSFET.
Embodiment 2：
The present embodiment also provides a kind of insulating substrate structure and the power module using the substrate, structure and embodiment
1 provide structure be roughly the same, the two difference lies in：Power module in the present embodiment is using length shown in Fig. 2 (c)
7 structure of equalizing tank.
Embodiment 3：
The present embodiment also provides a kind of insulating substrate structure and the power module using the substrate, as shown in fig. 6, it is tied
The structure that structure is provided with embodiment 1 is roughly the same, the two difference lies in：All half-bridge structures connection two jointly in the present embodiment
A DC input terminal 8, electrical structure topological diagram are as shown in Figure 7.
Embodiment 4：
The present embodiment also provides a kind of insulating substrate structure and the power module using the substrate, as shown in figure 8, it is tied
The structure that structure is provided with embodiment 1 is roughly the same, the two difference lies in：Upper bridge arm chip unit 3 and lower bridge in the present embodiment
The chip type of arm chip unit 4 includes IGBT and FRD, also, all half-bridge structures connect two direct-flow input ends jointly
Son 8.
Embodiment 5：
The present embodiment also provides a kind of insulating substrate structure and the power module using the substrate, structure and embodiment
1 provide structure be roughly the same, the two difference lies in：Power module in the present embodiment includes three insulating substrates, but only
There is its lower bridge arm metal layer 2 positioned at an insulating substrate of centre to be equipped with insulation between Wiring area 5 and lower bridge arm chip unit 4
Equalizing tank 7.
Embodiment 6：
The present embodiment also provides a kind of insulating substrate structure and the power module using the substrate, structure and embodiment
1 provide structure be roughly the same, the two difference lies in：Power module in the present embodiment includes transversely arranged three half-bridges
Structure, each half-bridge structure include two insulating substrates of longitudinal arrangement, close to three insulation bases of a line of DC input terminal 8
Its lower bridge arm metal layer 2 of plate is equipped with the equalizing tank 7 of insulation between Wiring area 5 and lower bridge arm chip unit 4.
Embodiment 7：
The present embodiment also provides a kind of insulating substrate structure and the power module using the substrate, structure and embodiment
1 provide structure be roughly the same, the two difference lies in：Power module in the present embodiment only includes two half-bridge structures, often
A half-bridge structure includes an insulating substrate, its lower bridge arm metal layer 2 of each insulating substrate is in Wiring area 5 and lower bridge arm chip list
The equalizing tank 7 of insulation is equipped between member 4.
In the description of the present invention, it is to be understood that, term "horizontal", "vertical", "upper", "lower", " top ", " bottom
The orientation or positional relationship of the instructions such as portion " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing this hair
Bright and simplified description, does not indicate or imply the indicated equipment or element must have a particular orientation, with specific orientation
Construction and operation, therefore be not considered as limiting the invention.
It the above is only the preferred embodiment of the present invention, it should be pointed out that：Those skilled in the art are come
It says, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (12)
1. a kind of insulating substrate structure, which is characterized in that including ceramic insulating layer and the gold being formed on the ceramic insulating layer
Belong to layer, the metal layer includes upper bridge arm metal layer (1) and lower bridge arm metal layer (2), and upper bridge arm metal layer (1) is equipped with upper bridge
Arm chip unit (3), lower bridge arm metal layer (2) are equipped with lower bridge arm chip unit (4), and lower bridge arm metal layer (2) includes wiring
Area (5), upper bridge arm chip unit (3) are connected with Wiring area (5) by bonding line (6), and lower bridge arm metal layer (2) is in Wiring area
(5) equalizing tank (7) of insulation is equipped between lower bridge arm chip unit (4).
2. a kind of insulating substrate structure according to claim 1, which is characterized in that the equalizing tank (7) originates in close
The edge of the lower bridge arm metal layer (2) of DC input terminal (8) extends to the direction far from DC input terminal (8).
3. a kind of insulating substrate structure according to claim 2, which is characterized in that the extending direction of the equalizing tank (7)
It is vertical with the bonding direction of bonding line (6).
4. a kind of insulating substrate structure according to claim 2, which is characterized in that lower bridge arm chip unit (4) packet
Include the power device of multiple parallel connections, the equalizing tank (7) is most short to be extended to concordant with the top of first power device, and longest is prolonged
It extends to concordant with the top of the last one power device.
5. a kind of insulating substrate structure according to claim 1, which is characterized in that the equalizing tank (7) is insulated for single hop
Slot or multistage insulation tank.
6. a kind of insulating substrate structure according to claim 1, which is characterized in that the upper bridge arm chip unit (3)
Material is one or more in Si, SiC and GaN, and the material of lower bridge arm chip unit (4) is one kind in Si, SiC and GaN
Or it is a variety of.
7. a kind of insulating substrate structure according to claim 1, which is characterized in that the upper bridge arm chip unit (3)
Chip type be it is one or more in IGBT, MOSFET and FRD, the chip type of lower bridge arm chip unit (4) be IGBT,
It is one or more in MOSFET and FRD.
8. a kind of power module, it is characterised in that：Use the insulating substrate structure as described in any one of claim 1-7.
9. a kind of power module according to claim 8, which is characterized in that including DC input terminal (8), leading-out terminal
(9) and the half-bridge structure of multiple parallel connections, half-bridge structure include the chip set on insulating substrate and insulating substrate, each half-bridge knot
Structure is separately connected two DC input terminals (8) and a leading-out terminal (9), the lower bridge arm metal layer of at least one insulating substrate
(2) equalizing tank (7) of insulation is equipped between Wiring area (5) and lower bridge arm chip unit (4).
10. a kind of power module according to claim 9, which is characterized in that including tactic three half-bridge structures,
Each half-bridge structure includes an insulating substrate, is located at intermediate its lower bridge arm metal layer (2) of an insulating substrate in Wiring area
(5) equalizing tank (7) of insulation is equipped between lower bridge arm chip unit (4).
11. a kind of power module according to claim 9, which is characterized in that including three transversely arranged half-bridge structures,
Each half-bridge structure includes two insulating substrates of longitudinal arrangement, close to three insulating substrates of a line of DC input terminal (8)
Its lower bridge arm metal layer (2) is equipped with the equalizing tank (7) of insulation between Wiring area (5) and lower bridge arm chip unit (4).
12. a kind of power module according to claim 9, which is characterized in that including two half-bridge structures, each half-bridge knot
Structure includes an insulating substrate, its lower bridge arm metal layer (2) of each insulating substrate is in Wiring area (5) and lower bridge arm chip unit
(4) equalizing tank (7) of insulation is equipped between.
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| CN201610435605.2A CN105931998B (en) | 2016-06-17 | 2016-06-17 | A kind of insulating substrate structure and the power module using the substrate |
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| CN201610435605.2A CN105931998B (en) | 2016-06-17 | 2016-06-17 | A kind of insulating substrate structure and the power module using the substrate |
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| CN105931998B true CN105931998B (en) | 2018-07-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107146775A (en) * | 2017-06-14 | 2017-09-08 | 扬州国扬电子有限公司 | A kind of low stray inductance two-side radiation power model |
| CN107369657B (en) * | 2017-08-30 | 2023-10-13 | 扬州国扬电子有限公司 | Double-sided heat dissipation power module with multiple areas arranged in parallel |
| CN108447845B (en) * | 2018-05-21 | 2024-06-21 | 臻驱科技（上海）有限公司 | Power semiconductor module substrate and power semiconductor module |
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