CN205211750U - Power module - Google Patents
Power module Download PDFInfo
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- CN205211750U CN205211750U CN201520942656.5U CN201520942656U CN205211750U CN 205211750 U CN205211750 U CN 205211750U CN 201520942656 U CN201520942656 U CN 201520942656U CN 205211750 U CN205211750 U CN 205211750U
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- China
- Prior art keywords
- brachium pontis
- copper
- power switch
- upper brachium
- layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
Abstract
The utility model discloses a power module, including positive electrode, negative electrode, output electrode, upward bridge arm set, lower bridge arm set and transition copper layer, it includes last bridge arm chip copper layer, goes up bridge arm wiring copper layer and install the last bridge arm chip unit on last bridge arm chip copper layer to go up the bridge arm set, go up bridge arm wiring copper level between last bridge arm chip copper layer and transition copper layer, it passes through nation's alignment and links to each other with last bridge arm wiring copper layer to go up bridge arm chip unit. The utility model discloses a distribution structure that changes the copper layer changes current path, the last bridge arm chip copper layer of adjacent setting, go up bridge arm wiring copper layer, mutually supporting in transition copper layer, has reduced operating current and freewheeling current's afterflow return circuit area, has reduced the complexity of stray inductance and switching loss and circuit, has improved the reliability of module, can use in high -speed power module field.
Description
Technical field
The utility model relates to field of power electronics, is specifically related to a kind of power model.
Background technology
Power model is that power power electronic device is as metal-oxide-semiconductor (metal-oxide semiconductor (MOS)), IGBT (insulated-gate type field effect transistor), the power switch module that FRD (fast recovery diode) is combined and packaged into by certain function, it is mainly used in electric automobile, photovoltaic generation, wind power generation, the power transfer under the various occasion such as industrial frequency conversion.
But repeatedly switched along with the power switch in module, the inductance produced by its structural allocation can reduce the reliability of power model.Common power model due to continuous current circuit area comparatively large, the continuous current circuit inductance of module is very large, and under causing big current situation, the switching loss of module is large, and reliability is low.
Utility model content
Utility model object: for the problems referred to above, the utility model aims to provide the power model that a kind of stray inductance is low, switching loss is little, reliability is high.
Technical scheme: a kind of power model, comprise positive electrode, negative electrode, output electrode, upper brachium pontis set, lower brachium pontis set and transition layers of copper, the upper brachium pontis chip unit that described upper brachium pontis set comprises brachium pontis chip layers of copper, upper brachium pontis wiring layers of copper and is arranged in brachium pontis chip layers of copper, described upper brachium pontis wiring layers of copper is between upper brachium pontis chip layers of copper and transition layers of copper, and described upper brachium pontis chip unit is connected with upper brachium pontis wiring layers of copper by nation's alignment; The operating current flowed out from positive electrode flows into brachium pontis chip unit by upper brachium pontis chip layers of copper, then flows into upper brachium pontis wiring layers of copper by nation's alignment, finally flow to output electrode; The freewheel current flowed out by negative electrode flows into lower brachium pontis set by transition layers of copper, finally flow to output electrode.
Further, the described lower brachium pontis set lower brachium pontis chip unit that comprises lower brachium pontis chip layers of copper, lower brachium pontis wiring layers of copper and be arranged in lower brachium pontis chip layers of copper.
Further, described upper brachium pontis chip unit comprises the upper brachium pontis power switch and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis chip unit comprises the lower brachium pontis power switch and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch and the parallel connection of lower brachium pontis internal body diodes; The freewheel current flowed out by negative electrode flows into the lower positive pole of brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes by transition layers of copper, lower brachium pontis wiring layers of copper, then transfers to output electrode through lower brachium pontis layers of copper.
Further, described upper brachium pontis chip unit comprises brachium pontis power switch and upper brachium pontis external diode in parallel with it, and lower brachium pontis chip unit comprises lower brachium pontis power switch and lower brachium pontis external diode in parallel with it; The freewheel current flowed out by negative electrode flows into the lower positive pole of brachium pontis external diode, the negative pole of lower brachium pontis external diode by transition layers of copper, lower brachium pontis wiring layers of copper, then transfers to output electrode through lower brachium pontis chip layers of copper.
Further, described upper brachium pontis chip unit comprises upper brachium pontis power switch in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis chip unit comprises lower brachium pontis power switch in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch and lower brachium pontis internal body diodes are integrated in one; The freewheel current flowed out by negative electrode flows into the lower positive pole of brachium pontis external diode and the negative pole of the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis external diode and lower brachium pontis internal body diodes by transition layers of copper, lower brachium pontis wiring layers of copper, then transfers to output electrode through lower brachium pontis chip layers of copper.
Further, described upper brachium pontis chip unit comprises brachium pontis power switch; Described upper brachium pontis power switch and lower brachium pontis power switch are metal-oxide-semiconductor; The operating current flowed out from positive electrode flows through the drain electrode of upper brachium pontis power switch, the source electrode of upper brachium pontis power switch by upper brachium pontis chip layers of copper, flows into upper brachium pontis wiring layers of copper, finally flow to output electrode through nation's alignment.
Further, described upper brachium pontis chip unit comprises brachium pontis power switch; Described upper brachium pontis power switch and lower brachium pontis power switch are IGBT; The operating current flowed out from positive electrode flows through the collector electrode of upper brachium pontis power switch, the emitter of upper brachium pontis power switch by upper brachium pontis chip layers of copper, flows into upper brachium pontis wiring layers of copper, finally flow to output electrode through nation's alignment.
Further, described upper brachium pontis chip unit comprises brachium pontis power switch; Described upper brachium pontis power switch is metal-oxide-semiconductor, and lower brachium pontis power switch is IGBT; The operating current flowed out from positive electrode flows through the drain electrode of upper brachium pontis power switch, the source electrode of upper brachium pontis power switch by upper brachium pontis chip layers of copper, flows into upper brachium pontis wiring layers of copper, finally flow to output electrode through nation's alignment.
Further, described upper brachium pontis chip unit comprises brachium pontis power switch; Described upper brachium pontis power switch is IGBT, and lower brachium pontis power switch is metal-oxide-semiconductor; The operating current flowed out from positive electrode flows through the collector electrode of upper brachium pontis power switch, the emitter of upper brachium pontis power switch by upper brachium pontis chip layers of copper, flows into upper brachium pontis wiring layers of copper, finally flow to output electrode through nation's alignment.
Beneficial effect: the utility model changes current path by the distributed architecture changing layers of copper, the upper brachium pontis chip layers of copper be disposed adjacent, upper brachium pontis wiring layers of copper, transition layers of copper cooperatively interact, the operating current flowed out from positive electrode is made to flow into brachium pontis chip unit by upper brachium pontis chip layers of copper, flow into upper brachium pontis wiring layers of copper by nation's alignment again, finally flow to output electrode; The freewheel current flowed out by negative electrode flows into lower brachium pontis set by transition layers of copper and finally flow to output electrode.Reduce the continuous current circuit area of operating current and freewheel current, reduce the complexity of stray inductance and switching loss and circuit, improve the reliability of module, high-speed power module field can be applied in.
Accompanying drawing explanation
Fig. 1 is current diagram of the present utility model;
Fig. 2 (a), 2 (b) circuit diagram of the present utility model;
Fig. 3 is three-dimensional structure diagram of the present utility model.
Embodiment
As shown in Figure 1, a kind of power model, comprises positive electrode 1, negative electrode 2, output electrode 3, upper brachium pontis set and lower brachium pontis set and transition layers of copper 6.
The upper brachium pontis chip unit 7 that described upper brachium pontis set comprises brachium pontis chip layers of copper 4, upper brachium pontis wiring layers of copper 5 and is arranged in brachium pontis chip layers of copper 4, described upper brachium pontis wiring layers of copper 5 is between upper brachium pontis chip layers of copper 4 and transition layers of copper 6, and described upper brachium pontis chip unit 7 is connected with upper brachium pontis wiring layers of copper 5 by fixed (bonding) line of nation;
Described upper brachium pontis chip unit 7 comprises brachium pontis power switch;
The another kind of structure of upper brachium pontis power switch and lower brachium pontis power switch is: upper brachium pontis power switch and lower brachium pontis power switch are metal-oxide-semiconductor, its circuit diagram is as shown in Fig. 2 (a), the operating current 11 flowed out from positive electrode 1 flows through the drain electrode of upper brachium pontis power switch, the source electrode of upper brachium pontis power switch by upper brachium pontis chip layers of copper 4, flow into upper brachium pontis wiring layers of copper 5 through nation's alignment, finally flow to output electrode 3.
Upper brachium pontis power switch and lower brachium pontis power switch are IGBT, its circuit diagram is as shown in Fig. 2 (b), the operating current 11 flowed out from positive electrode 1 flows through the collector electrode of upper brachium pontis power switch, the emitter of upper brachium pontis power switch by upper brachium pontis chip layers of copper 4, flow into upper brachium pontis wiring layers of copper 5 through nation's alignment, finally flow to output electrode 3.
The structure of upper brachium pontis power switch and lower brachium pontis power switch can also be: upper brachium pontis power switch is metal-oxide-semiconductor, and lower brachium pontis power switch is IGBT; The operating current 11 flowed out from positive electrode 1 flows through the drain electrode of upper brachium pontis power switch, the source electrode of upper brachium pontis power switch by upper brachium pontis chip layers of copper 4, flows into upper brachium pontis wiring layers of copper 5, finally flow to output electrode 3 through nation's alignment.
The structure of upper brachium pontis power switch and lower brachium pontis power switch can also be: described upper brachium pontis power switch is IGBT, and lower brachium pontis power switch is metal-oxide-semiconductor; The operating current 11 flowed out from positive electrode 1 flows through the collector electrode of upper brachium pontis power switch, the emitter of upper brachium pontis power switch by upper brachium pontis chip layers of copper 4, flows into upper brachium pontis wiring layers of copper 5, finally flow to output electrode 3 through nation's alignment.
The lower brachium pontis chip unit 8 that described lower brachium pontis set comprises lower brachium pontis chip layers of copper 9, lower brachium pontis wiring layers of copper 10 and is arranged in lower brachium pontis chip layers of copper 9.
A kind of structure of upper brachium pontis set and lower brachium pontis set is: described upper brachium pontis chip unit 7 comprises the upper brachium pontis power switch and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis chip unit 8 comprises the lower brachium pontis power switch and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch and the parallel connection of lower brachium pontis internal body diodes; The freewheel current 21 flowed out by negative electrode 2 flows into the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes by transition layers of copper 6, lower brachium pontis wiring layers of copper 10, then transfers to output electrode 3 through lower brachium pontis chip layers of copper 9.
Upper brachium pontis set with the another kind of structure of lower brachium pontis set is: described upper brachium pontis chip unit 7 comprises upper brachium pontis power switch and upper brachium pontis external diode in parallel with it, and lower brachium pontis chip unit 8 comprises lower brachium pontis power switch and lower brachium pontis external diode in parallel with it; The freewheel current 21 flowed out by negative electrode 2 flows into the positive pole of lower brachium pontis external diode, the negative pole of lower brachium pontis external diode by transition layers of copper 6, lower brachium pontis wiring layers of copper 10, then transfers to output electrode 3 through lower brachium pontis chip layers of copper 9.
As shown in Figure 3, in the present embodiment, upper brachium pontis set comprises 3 upper brachium pontis power switchs in parallel and 6 upper brachium pontis external diode in parallel altogether; Lower brachium pontis set comprises 3 lower brachium pontis power switchs in parallel and 6 lower brachium pontis external diode in parallel altogether.
Upper brachium pontis set with the structure of lower brachium pontis set can also be: described upper brachium pontis chip unit 7 comprises upper brachium pontis power switch in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis chip unit 8 comprises lower brachium pontis power switch in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch and lower brachium pontis internal body diodes are integrated in one; The freewheel current 21 flowed out by negative electrode 2 flows into the positive pole of lower brachium pontis external diode and the negative pole of the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis external diode and lower brachium pontis internal body diodes by transition layers of copper 6, lower brachium pontis wiring layers of copper 10, then transfers to output electrode 3 through lower brachium pontis chip layers of copper 9.
The operating current 11 flowed out from positive electrode 1 flows into brachium pontis chip unit 7 by upper brachium pontis chip layers of copper 4, then flows into upper brachium pontis wiring layers of copper 5 by nation's alignment, finally flow to output electrode 3; The freewheel current 21 flowed out by negative electrode 2 flows into lower brachium pontis set by transition layers of copper 6 and finally flow to output electrode 3.
The utility model changes current path by the distributed architecture changing layers of copper, the upper brachium pontis chip layers of copper be disposed adjacent, upper brachium pontis wiring layers of copper, transition layers of copper cooperatively interact, reduce the continuous current circuit area of operating current and freewheel current, reduce the complexity of stray inductance and switching loss and circuit, improve the reliability of module, high-speed power module field can be applied in.
Claims (9)
1. a power model, comprise positive electrode (1), negative electrode (2), output electrode (3), upper brachium pontis set, lower brachium pontis set and transition layers of copper (6), it is characterized in that, described upper brachium pontis set comprises brachium pontis chip layers of copper (4), upper brachium pontis wiring layers of copper (5) and the upper brachium pontis chip unit (7) be arranged in brachium pontis chip layers of copper (4), described upper brachium pontis wiring layers of copper (5) is positioned between brachium pontis chip layers of copper (4) and transition layers of copper (6), described upper brachium pontis chip unit (7) is connected with upper brachium pontis wiring layers of copper (5) by nation's alignment, the operating current (11) flowed out from positive electrode (1) is by brachium pontis chip unit (7) the inflow of upper brachium pontis chip layers of copper (4), flow into upper brachium pontis wiring layers of copper (5) by nation's alignment again, finally flow to output electrode (3), the freewheel current (21) flowed out by negative electrode (2) flows into lower brachium pontis set by transition layers of copper (6), finally flow to output electrode (3).
2. a kind of power model according to claim 1, is characterized in that: the lower brachium pontis chip unit (8) that described lower brachium pontis set comprises lower brachium pontis chip layers of copper (9), lower brachium pontis wiring layers of copper (10) and is arranged on lower brachium pontis chip layers of copper (9).
3. a kind of power model according to claim 2, it is characterized in that: described upper brachium pontis chip unit (7) comprises the upper brachium pontis power switch and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis chip unit (8) comprises the lower brachium pontis power switch and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch and the parallel connection of lower brachium pontis internal body diodes; The freewheel current (21) flowed out by negative electrode (2) flows into the lower positive pole of brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes by transition layers of copper (6), lower brachium pontis wiring layers of copper (10), then transfers to output electrode (3) through lower brachium pontis layers of copper (9).
4. a kind of power model according to claim 2, it is characterized in that: described upper brachium pontis chip unit (7) comprises brachium pontis power switch and upper brachium pontis external diode in parallel with it, lower brachium pontis chip unit (8) comprises lower brachium pontis power switch and lower brachium pontis external diode in parallel with it; The freewheel current (21) flowed out by negative electrode (2) flows into the lower positive pole of brachium pontis external diode, the negative pole of lower brachium pontis external diode by transition layers of copper (6), lower brachium pontis wiring layers of copper (10), then transfers to output electrode (3) through lower brachium pontis chip layers of copper (9).
5. a kind of power model according to claim 2, it is characterized in that: described upper brachium pontis chip unit (7) comprises upper brachium pontis power switch in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis chip unit (8) comprises lower brachium pontis power switch in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch and lower brachium pontis internal body diodes are integrated in one; The freewheel current (21) flowed out by negative electrode (2) flows into the lower positive pole of brachium pontis external diode and the negative pole of the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis external diode and lower brachium pontis internal body diodes by transition layers of copper (6), lower brachium pontis wiring layers of copper (10), then transfers to output electrode (3) through lower brachium pontis chip layers of copper (9).
6. a kind of power model according to claim 1, is characterized in that: described upper brachium pontis chip unit (7) comprises brachium pontis power switch; Described upper brachium pontis power switch and lower brachium pontis power switch are metal-oxide-semiconductor; The operating current (11) flowed out from positive electrode (1) flows through the drain electrode of upper brachium pontis power switch, the source electrode of upper brachium pontis power switch by upper brachium pontis chip layers of copper (4), flow into upper brachium pontis wiring layers of copper (5) through nation's alignment, finally flow to output electrode (3).
7. a kind of power model according to claim 1, is characterized in that: described upper brachium pontis chip unit (7) comprises brachium pontis power switch; Described upper brachium pontis power switch and lower brachium pontis power switch are IGBT; The operating current (11) flowed out from positive electrode (1) flows through the collector electrode of upper brachium pontis power switch, the emitter of upper brachium pontis power switch by upper brachium pontis chip layers of copper (4), flow into upper brachium pontis wiring layers of copper (5) through nation's alignment, finally flow to output electrode (3).
8. a kind of power model according to claim 1, is characterized in that: described upper brachium pontis chip unit (7) comprises brachium pontis power switch; Described upper brachium pontis power switch is metal-oxide-semiconductor, and lower brachium pontis power switch is IGBT; The operating current (11) flowed out from positive electrode (1) flows through the drain electrode of upper brachium pontis power switch, the source electrode of upper brachium pontis power switch by upper brachium pontis chip layers of copper (4), flow into upper brachium pontis wiring layers of copper (5) through nation's alignment, finally flow to output electrode (3).
9. a kind of power model according to claim 1, is characterized in that: described upper brachium pontis chip unit (7) comprises brachium pontis power switch; Described upper brachium pontis power switch is IGBT, and lower brachium pontis power switch is metal-oxide-semiconductor; The operating current (11) flowed out from positive electrode (1) flows through the collector electrode of upper brachium pontis power switch, the emitter of upper brachium pontis power switch by upper brachium pontis chip layers of copper (4), flow into upper brachium pontis wiring layers of copper (5) through nation's alignment, finally flow to output electrode (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520942656.5U CN205211750U (en) | 2015-11-23 | 2015-11-23 | Power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520942656.5U CN205211750U (en) | 2015-11-23 | 2015-11-23 | Power module |
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| Publication Number | Publication Date |
|---|---|
| CN205211750U true CN205211750U (en) | 2016-05-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520942656.5U Active CN205211750U (en) | 2015-11-23 | 2015-11-23 | Power module |
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| CN (1) | CN205211750U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105374810A (en) * | 2015-11-23 | 2016-03-02 | 扬州国扬电子有限公司 | Power module |
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2015
- 2015-11-23 CN CN201520942656.5U patent/CN205211750U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105374810A (en) * | 2015-11-23 | 2016-03-02 | 扬州国扬电子有限公司 | Power module |
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