CN104779815B - A kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module - Google Patents
A kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module Download PDFInfo
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- CN104779815B CN104779815B CN201510155623.0A CN201510155623A CN104779815B CN 104779815 B CN104779815 B CN 104779815B CN 201510155623 A CN201510155623 A CN 201510155623A CN 104779815 B CN104779815 B CN 104779815B
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- power
- sic mosfet
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- driving chip
- terminal
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module, including bottom plate, AC power terminal, input terminal, the first control terminal and the second control terminal, SiC MOSFET power cells, bus capacitor, the first drive circuit and the second drive circuit are integrated with bottom plate.The present invention can effectively reduce the stray inductance of driving circuit and loop of power circuit, reduce the vibration of loop of power circuit and driving circuit, improve the functional reliability and operating efficiency of semiconductor switch.
Description
Technical field
The invention belongs to electric and electronic technical field, it is related to a kind of power integration module, and in particular to a kind of replaceable
The SiC MOSFET intelligent power integration modules of IGBT module.
Background technology
Si IGBT devices are widely used in power conversion circuit, for example electric power is dragged due to its excellent on state characteristic
It is dynamic, air-conditioning etc..However, IGBT device switching speed is not high, and be present reverse-recovery problems in the diode of reverse parallel connection, cause
Switching loss is very big, which has limited the lifting of the efficiency of power conversion circuit, on the other hand, also limit carrying for switching frequency
It is high.Low switching frequency causes the sufficiently bulky of passive device in power inverter (such as electric capacity and inductance), and this will increase work(
Volume, weight and the cost of rate converter.SiC MOSFET elements are compared to IGBT device, under equal stress levels, due to SiC
MOSFET conducting resistance is small, and turn off process is not the problem of have tail currents, is damaged so being switched under equal condition of work
Consumption can be much smaller.SiC cut-in voltages are small, so can realize that low conducting is damaged in the wide-range current from low current to high current
Consumption.Additionally due to the problem of SiC MOSFET elements do not have tail currents, so its turn-off power loss very little.Research shows, uses
SiC device, which replaces IGBT device, can increase substantially switching frequency, maintain good efficiency index.
However, SiC device brings a bigger challenge to user in the application.The raster data model electric charge of SiC device
(Qg) very little, junction capacity is also very small, therefore switching speed is more faster than IGBT device.Good one side is can to improve switch frequency
Rate, but bad one side be exactly switching branches in switching process curent change is very fast, di/dt is very high.Due to loop of power circuit
In inevitably there is stray inductance, when electric current changes rapidly, very high spike can be produced at switching device two ends excessively electric
Pressure.It is light then cause circuit erroneous action, electromagnetic interference exceeded, it is heavy then cause device breakdown to be damaged.SiC device very high switching speed
Cause unwanted oscillation in its switching process and overvoltage phenomenon obvious more than IGBT device.On the other hand, the driving of SiC device
The parasitic concussion of driving circuit is also critically important.By taking the device of Creat Company of the U.S. as an example, its threshold voltage only has 2.2V, in device
During shut-off, the vibration of driving circuit easily causes misleading for device.By contrast, the threshold voltage of IGBT device is about
5.5V.For this problem, the stray inductance of SiC device grid return and the output impedance of drive circuit must be controlled strictly
System.These factors add the difficulty in SiC device application, hinder the extensive use of SiC device.
Traditional IGBT module generally only includes one or more pairs of IGBT devices, so that one or more bridge arms are formed, side
Just use, and with preferable heat dispersion, reduce the difficulty of application.In actual applications, due to bus Absorption Capacitance
It is arranged on drive circuit in module-external, causes driving circuit stray inductance and loop of power circuit stray inductance circuit larger, this
It is unacceptable for SiC device, so such a integrated and inapplicable scheme is in SiC device.
The content of the invention
It is an object of the invention to the shortcoming for overcoming above-mentioned prior art, there is provided a kind of SiC of replaceable IGBT module
MOSFET intelligent power integration modules, the module can effectively reduce the stray inductance of driving circuit and loop of power circuit, reduce
The vibration of loop of power circuit and driving circuit.
To reach above-mentioned purpose, the SiC MOSFET intelligent power integration modules of replaceable IGBT module of the present invention
Including bottom plate, AC power terminal, input terminal, the first control terminal and the second control terminal, SiC is integrated with bottom plate
MOSFET power cells, bus capacitor, the first drive circuit and the second drive circuit；
First drive circuit includes the first accessory power supply, the first driving chip and the first drive level change-over circuit, second
Drive circuit includes the second accessory power supply, the second driving chip and the second drive level change-over circuit, the first control terminal and the
The input of the control end of one accessory power supply and the first drive level change-over circuit is connected, the second control terminal and the second auxiliary
The input of the control end of power supply and the second drive level change-over circuit is connected, the power interface of the first driving chip and first
Accessory power supply is connected, and the input of the first driving chip is connected with the output end of the first drive level change-over circuit, and second
The power interface of driving chip is connected with the second accessory power supply, and the input of the second driving chip and the second drive level are changed
The output end of circuit is connected, the output end of the output end of the first driving chip and the second driving chip respectively with SiC MOSFET
The control end of upper bridge arm and the control end of lower bridge arm are connected in power cell；
The input of the SiC MOSFET power cells is connected with input terminal, SiC MOSFET power cells it is defeated
Go out end with AC power terminal to be connected, bus capacitor is parallel to the two ends of SiC MOSFET power cell bridge arms.
The SiC MOSFET power cells are half-bridge power module, full bridge power module or three phase full bridge power model.
The bottom plate is also integrated with the temperature detecting unit for detecting semiconductor devices operating temperature, temperature detecting unit
It is connected with temperature detection terminal.
The invention has the advantages that：
The SiC MOSFET intelligent powers integration modules of replaceable IGBT module of the present invention are by by SiC
MOSFET power cells, bus capacitor, the first drive circuit and the second drive circuit are integrated on same bottom plate, are reduced power and are returned
Road and the area of driving circuit, so as to reduce the stray inductance of driving circuit and loop of power circuit, reduce loop of power circuit and drive back
The vibration on road, so that it is guaranteed that the safety of SiC device, and then reduce the application difficulty of SiC device.Simultaneously of the invention and external electricity
The binding post on road and existing IGBT are completely compatible, can directly replace IGBT module, are conducive to the popularization of SiC device and make
With, while simplify the design work of application user, the cost of saving device upgrade transformation.
Brief description of the drawings
Fig. 1 is structural representation of the invention.
Wherein, 1 it is SiC MOSFET power cells, 2 be the first accessory power supply, 3 be the first driving chip, 4 is the first drive
Dynamic level shifting circuit, 5 be the second accessory power supply, 6 be the second driving chip, 7 be the second drive level change-over circuit, 8 be temperature
Degree detection unit, 9 are bus capacitor.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings：
With reference to Fig. 1, the SiC MOSFET intelligent powers integration module of replaceable IGBT module of the present invention includes bottom
SiC MOSFET work(is integrated with plate, AC power terminal, input terminal, the first control terminal and the second control terminal, bottom plate
Rate unit 1, bus capacitor 9, the first drive circuit and the second drive circuit；First drive circuit includes the first accessory power supply 2, the
One driving chip 3 and the first drive level change-over circuit 4, the second drive circuit include the second accessory power supply 5, the second driving chip
6 and the second drive level change-over circuit 7, the control end and the first drive level of the first control terminal and the first accessory power supply 2 turn
The input for changing circuit 4 is connected, the second control terminal and the control end of the second accessory power supply 5 and the second drive level conversion electricity
The input on road 7 is connected, and the power interface of the first driving chip 3 is connected with the first accessory power supply 2, the first driving chip 3
Input be connected with the output end of the first drive level change-over circuit 4, the power interface of the second driving chip 6 and second auxiliary
Power supply 5 is helped to be connected, the input of the second driving chip 6 is connected with the output end of the second drive level change-over circuit 7, the
The output end of one driving chip 3 and the output end of the second driving chip 6 are respectively with going up bridge arm in SiC MOSFET power cells 1
Control end and the control end of lower bridge arm are connected；The input of the SiC MOSFET power cells 1 is connected with input terminal,
The output end of SiC MOSFET power cells 1 is connected with AC power terminal, and bus capacitor 9 is parallel to SiC MOSFET power
The two ends of the bridge arm of unit 1.
It should be noted that the SiC MOSFET power cells 1 are half-bridge power module, full bridge power module or three-phase
Full bridge power module；Bottom plate is also integrated with the temperature detecting unit 8 for detecting semiconductor devices operating temperature, temperature detection list
Member 8 is connected with temperature detection terminal.
The present invention specific work process be：
First control signal enters the first accessory power supply 2 and the first drive level change-over circuit 4 through the first control terminal
In, the first accessory power supply 2 is provided electric energy, first control of the first 4 pairs of drive level change-over circuit for the first driving chip 3
Signal carries out level conversion, and the first control signal after level conversion is input in the first driving chip 3, the first driving core
The switching tube work of upper bridge arm in the driving SiCMOSFET of piece 3 power cells 1.Second control signal enters through the first control terminal
Into the second accessory power supply 5 and the second drive level change-over circuit 7, the second accessory power supply 5 is set to provide electricity for the second driving chip 6
Can, the second 7 pairs of drive level change-over circuit second control signal carries out level conversion, and second after level conversion is controlled
Signal processed is input in the second driving chip 6, and lower bridge arm opens in the second driving chip 6 driving SiC MOSFET power cells 1
Close pipe work.The SiC MOSFET intelligent powers integration modules of replaceable IGBT module of the present invention by bus capacitor 9 with
SiC MOSFET power cells 1, the first drive circuit and the second drive circuit are integrated in same module, reduce bus capacitor 9
The distance between with each semiconductor devices, the loop area of loop of power circuit is reduced, so as to reduce driving circuit and loop of power circuit
Stray inductance, reduces the vibration of loop of power circuit and driving circuit.
Claims (1)
1. the SiC MOSFET intelligent power integration modules of a kind of replaceable IGBT module, it is characterised in that including bottom plate, exchange
SiC MOSFET power cells are integrated with power terminal, input terminal, the first control terminal and the second control terminal, bottom plate
(1), bus capacitor (9), the first drive circuit and the second drive circuit；
First drive circuit includes the first accessory power supply (2), the first driving chip (3) and the first drive level change-over circuit (4),
Second drive circuit includes the second accessory power supply (5), the second driving chip (6) and the second drive level change-over circuit (7), first
Control terminal is connected with the control end of the first accessory power supply (2) and the input of the first drive level change-over circuit (4), and second
Control terminal is connected with the control end of the second accessory power supply (5) and the input of the second drive level change-over circuit (7), and first
The power interface of driving chip (3) is connected with the first accessory power supply (2), and the input of the first driving chip (3) and first drives
The output end of dynamic level shifting circuit (4) is connected, power interface and the second accessory power supply (5) phase of the second driving chip (6)
Connection, the input of the second driving chip (6) is connected with the output end of the second drive level change-over circuit (7), the first driving
The output end of chip (3) and the output end of the second driving chip (6) are respectively with going up bridge arm in SiC MOSFET power cells (1)
Control end and the control end of lower bridge arm are connected；
The input of the SiC MOSFET power cells (1) is connected with input terminal, SiC MOSFET power cells (1)
Output end is connected with AC power terminal, and bus capacitor (9) is parallel to the two of SiC MOSFET power cells (1) bridge arm
End；
The SiC MOSFET power cells (1) are half-bridge power module or three phase full bridge power model；
The bottom plate is also integrated with the temperature detecting unit (8) for detecting semiconductor devices operating temperature, temperature detecting unit
(8) it is connected with temperature detection terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510155623.0A CN104779815B (en) | 2015-04-02 | 2015-04-02 | A kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510155623.0A CN104779815B (en) | 2015-04-02 | 2015-04-02 | A kind of SiC MOSFET intelligent power integration modules of replaceable IGBT module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104779815A CN104779815A (en) | 2015-07-15 |
| CN104779815B true CN104779815B (en) | 2017-08-01 |
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| CN107052527B (en) * | 2016-12-26 | 2019-06-18 | 华南理工大学 | A kind of high-power SiC arc burying welding power source |
| CN116520114A (en) * | 2023-03-09 | 2023-08-01 | 重庆大学 | MOS type semiconductor device testing equipment |
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| KR101571952B1 (en) * | 2011-05-12 | 2015-11-25 | 닛산 지도우샤 가부시키가이샤 | Switching circuit and semiconductor module |
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