CN104867891A - Double-layer conductive film electrical connecting structure for IGBT device - Google Patents
Double-layer conductive film electrical connecting structure for IGBT device Download PDFInfo
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- CN104867891A CN104867891A CN201410066895.9A CN201410066895A CN104867891A CN 104867891 A CN104867891 A CN 104867891A CN 201410066895 A CN201410066895 A CN 201410066895A CN 104867891 A CN104867891 A CN 104867891A
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Abstract
The invention discloses a double-layer conductive film electrical connecting structure for an IGBT device. The double-layer conductive film electrical connecting structure comprises a bottom plate, first conductive thin film arranged on the bottom plate, as well as a plurality of IGBT chips and diode chips which are arranged on the first conductive thin film, wherein emitters of the IGBT chips, the diode chips and an external circuit are electrically connected through second conductive thin film, grids among the IGBT chips are electrically connected through the second conductive thin film, and the grids of the IGBT chips and the external circuit are electrically connected through the second conductive thin film. The double-layer conductive film electrical connecting structure replaces the traditional DBC with the lower layer conductive thin film, reduces the conduction distance between the IGBT chips and the bottom plate, adopts heat conducting insulation materials for adhering the conductive thin film with the bottom plate, further improves the heat dissipation ability of the IGBT device, saves the cumbersome welding process, and ensures that the product has good reliability and stability.
Description
Technical field
The present invention relates to technical field of semiconductor device, be specifically related to a kind of IGBT device and use not only without binding line but also without the bilayer conductive film electric connection structure covering copper ceramic substrate (DBC).
Background technology
IGBT(Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, by BJT(double pole triode) and MOS(insulating gate type field effect tube) the compound full-control type voltage driven type power semiconductor that forms, have high input impedance and the GTR(power transistor of MOSFET concurrently) the advantage of low conduction voltage drop two aspect.GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, and driving power is little and saturation pressure reduces.Being applicable to very much being applied to direct voltage is that 600V and above converter system are as fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drives.
For common welded type IGBT, the electrical connection of chip has come by binding (Bonding) technology of aluminum steel, by aluminum wire bonding machine, the layers of copper aluminum steel on igbt chip, diode chip for backlight unit and DBC is coupled together, and igbt chip and diode chip for backlight unit are all welded on DBC, then are welded on base plate by DBC.
Welded type IGBT generally adopts the technology of aluminum wire bonding, and the diameter of aluminum steel directly has influence on the size of electric current, if the current class of IGBT is higher, so just need bonding more than ten aluminum steel on a single die to ensure the circulation of electric current, therefore will reserve enough layers of copper areas to meet the Spreading requirements of bonding line when designing DBC.
Welded type IGBT constantly raises along with the growth of operating time, temperature, and the aluminum steel of bonding likely can be made to lose efficacy, and namely bonding line tilts or fracture.
For the problems referred to above, inventor is 201310330191.3 at application number, name is called in the application for a patent for invention of " a kind of electric connection structure for IGBT device ", proposes to realize electrical connection by conducting film between the emitter of igbt chip, diode chip for backlight unit and external circuit and each IGBT grid.Contact due to conducting film belongs to face contact, ensure that the circulation of big current, decreases the risk that IGBT module works long hours and the binding line that causes lost efficacy, makes product have good reliability and stability.
But what the welding of the chip of welded type IGBT and the welding of DBC and DBC and base plate adopted is all vacuum soldering process, ensure that cavity and the flatness of welding can not be excessive, the enforcement of technique is very loaded down with trivial details, and DBC thermal resistance is comparatively large, is unfavorable for the heat radiation of IGBT device.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of IGBT device bilayer conductive film electric connection structure, this electric connection structure not only can remove the binding of aluminum steel from, and further eliminate the welding of DBC, avoid DBC and igbt chip and welding procedure loaded down with trivial details between DBC and base plate, also improve the radiating efficiency of IGBT device.
For achieving the above object, the invention provides following technical scheme:
IGBT device bilayer conductive film electric connection structure of the present invention, comprise base plate, the first conductive film be located on described base plate, be located at multiple igbt chip on described first conductive film and diode chip for backlight unit, the emitter of described igbt chip, between diode chip for backlight unit and external circuit, realize being electrically connected by the second conductive film between the grid of each igbt chip and between the grid of each igbt chip and external circuit.
Preferably, described first conductive film adopts the one in flexible circuit board structure, transparent conductive film structure, baried type conductive film structure or thin metal sheet.
Preferably, described first conductive film comprises insulating thin layer and conductive metal layer.
Further, described conductive metal layer is arranged at the surface of insulating thin layer or embeds in described insulating thin layer.
Preferably, described first conductive film is starched by silver and is electrically connected with the collector electrode of igbt chip and diode chip for backlight unit.
Preferably, described first conductive film is by heat-conducting insulation material and base plate sticking.
Preferably, described second conductive film adopts the one in flexible circuit board structure, transparent conductive film structure, baried type conductive film structure or thin metal sheet.
Preferably, described second conductive film comprises insulating thin layer and conductive metal layer.
Further, described conductive metal layer is arranged at the surface of insulating thin layer or embeds in described insulating thin layer.
Preferably, described second conductive film is starched by silver and is electrically connected with the emitter of igbt chip, grid and diode chip for backlight unit.
Compared to the IGBT single layer of conductive film electric connection structure that applicant proposes, the present invention replaces traditional DBC by lower conductive film, because conductive film is much thinner than DBC, decrease the distance that igbt chip conducts to base plate, heat-conducting insulation material is adopted conductive film and base plate to be sticked together again, further increase the heat-sinking capability of IGBT device, also eliminate loaded down with trivial details welding procedure simultaneously, ensure that product has good reliability and stability.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing for the present invention in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the overall schematic of the IGBT device single layer of conductive film electric connection structure that applicant has proposed;
Fig. 2 is the side cutaway view of the IGBT device single layer of conductive film electric connection structure that applicant has proposed;
Fig. 3 is the side cutaway view of the IGBT device bilayer conductive film electric connection structure that the present invention proposes.
Embodiment
The invention discloses a kind of IGBT device bilayer conductive film electric connection structure, comprise base plate, the first conductive film be located on described base plate, be located at multiple igbt chip on described first conductive film and diode chip for backlight unit, the emitter of described igbt chip, between diode chip for backlight unit and external circuit, realize being electrically connected by the second conductive film between the grid of each igbt chip and between the grid of each igbt chip and external circuit.
Preferably, described first conductive film adopts the one in flexible circuit board structure, transparent conductive film structure, baried type conductive film structure or thin metal sheet.
Preferably, described first conductive film comprises insulating thin layer and conductive metal layer.
Further, described conductive metal layer is arranged at the surface of insulating thin layer or embeds in described insulating thin layer.
Preferably, described first conductive film is starched by silver and is electrically connected with the collector electrode of igbt chip and diode chip for backlight unit.
Preferably, described first conductive film is by heat conductive insulating and base plate sticking.
Preferably, described second conductive film adopts the one in flexible circuit board structure, transparent conductive film structure, baried type conductive film structure or thin metal sheet.
Preferably, described second conductive film comprises insulating thin layer and conductive metal layer.
Further, described conductive metal layer is arranged at the surface of insulating thin layer or embeds in described insulating thin layer.
Preferably, described second conductive film is starched by silver and is electrically connected with the emitter of igbt chip, grid and diode chip for backlight unit.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be described in detail the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
See the overall schematic that Fig. 1, Fig. 1 are the IGBT device single layer of conductive film electric connection structures that applicant has proposed.As shown in the figure, covering on copper ceramic substrate (DBC) 20, be provided with multiple igbt chip 21, and multiple diode chip for backlight unit 22.The grid 211 of igbt chip 21 in the chips between (middle square fritter), the region in the middle of the upper surface removing of igbt chip 21 beyond grid 211 is the emitter of IGBT, and the lower surface of igbt chip 21 is collector electrode (not shown).
Emitter on igbt chip 21 and between diode chip for backlight unit 22, the physical circuit function of pressing device between the grid 211 of each igbt chip 21 carries out and is electrically connected.
Composition graphs 2, a surface was once provided with the conductive film 24 of conducting metal as the carrier connecting each device above-mentioned by applicant.This conductive film 24 covers on each device above-mentioned, by being coated with silver paste 25 on the electrode of device surface, the conductive metal layer on conductive film 24 is connected with the device electrode that will be connected.Corresponding, the upper surface of igbt chip 21 and diode chip for backlight unit 22 touches conductive film 24 fully by silver paste 25, as shown in Figure 2.
Conductive film 24 can be fexible film or stiffness films usually, when conductive film 24 is fexible film, when fixing with igbt chip 21 or diode chip for backlight unit 22, can consider that the height of each chip is different, still realizing perfection by the flexibility of conductive film 24 self and stick.This conductive film 24 can adopt the structure of similar flexible PCB, on polyimides or polyester film, and the conductive film needed for being formed by printed conductive metal layer (such as copper, silver, aluminium, nickel etc.); This conductive film also can adopt the structure of similar nesa coating, namely on film substrate, makes the electric conducting materials such as tin indium oxide, the conductive film needed for formation.This conductive film can also be baried type conducting film, namely produces groove at substrate surface, then conductive metal layer landfill is formed conductive structure in groove structure.The thin metal sheet that this conductive film can also directly be made by conducting metal, such as goldleaf, silver foil, tinfoil paper etc.
Composition graphs 1 and Fig. 2, as shown in Figure 3, the IGBT device bilayer conductive film electric connection structure that the application proposes, replaces DBC at conductive film 020() on, be provided with multiple igbt chip 021, and multiple diode chip for backlight unit 022.The grid of igbt chip 021 in the chips between, the region in the middle of the upper surface removing of igbt chip 021 beyond grid is the emitter of IGBT, and the lower surface of igbt chip 021 is collector electrode.Emitter on igbt chip 021 and between diode chip for backlight unit 022, the physical circuit function of pressing device between the grid of each igbt chip 021 carries out and is electrically connected.Surface is provided with the conductive film 024 of conducting metal as the carrier connecting each device above-mentioned.This conductive film 024 covers on each device above-mentioned, by the slurry of silver coating on the electrode of device surface 025, the conductive metal layer on conductive film 024 is connected with the device electrode that will be connected.Corresponding, the upper surface of igbt chip 021 and diode chip for backlight unit 022 touches conductive film 024 fully by silver slurry 025, and conductive film 020 is with reference to the conductive film 24 in conductive film 024(and Fig. 2), can be the same, also can be different.The lower surface of igbt chip 021 and diode chip for backlight unit 022 also touches conductive film 020 fully by silver slurry 025, conductive film 020 is fitted on base plate 023, can be pasted together by heat-conducting insulation material 026 and base plate 023, further increase the heat-sinking capability of IGBT device.
In sum, compared to the IGBT single layer of conductive film electric connection structure that applicant proposes, the present invention replaces traditional DBC by layer of conductive film, because conductive film is much thinner than DBC, decrease the distance that igbt chip conducts to base plate, then adopt heat-conducting insulation material conductive film and base plate to be sticked together, further increase the heat-sinking capability of IGBT device, also eliminate loaded down with trivial details welding procedure simultaneously, ensure that product has good reliability and stability.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (10)
1. an IGBT device bilayer conductive film electric connection structure, it is characterized in that: comprise base plate, the first conductive film be located on described base plate, be located at multiple igbt chip on described first conductive film and diode chip for backlight unit, the emitter of described igbt chip, between diode chip for backlight unit and external circuit, realize being electrically connected by the second conductive film between the grid of each igbt chip and between the grid of each igbt chip and external circuit.
2. bilayer conductive film electric connection structure according to claim 1, is characterized in that: described first conductive film adopts the one in flexible circuit board structure, transparent conductive film structure, baried type conductive film structure or thin metal sheet.
3. bilayer conductive film electric connection structure according to claim 1 and 2, is characterized in that: described first conductive film comprises insulating thin layer and conductive metal layer.
4. bilayer conductive film electric connection structure according to claim 3, is characterized in that: described conductive metal layer is arranged at the surface of insulating thin layer or embeds in described insulating thin layer.
5. bilayer conductive film electric connection structure according to claim 1, is characterized in that: described first conductive film is starched by silver and is electrically connected with the collector electrode of igbt chip and diode chip for backlight unit.
6. bilayer conductive film electric connection structure according to claim 1, is characterized in that: described first conductive film is by heat-conducting insulation material and base plate sticking.
7. bilayer conductive film electric connection structure according to claim 1, is characterized in that: described second conductive film adopts the one in flexible circuit board structure, transparent conductive film structure, baried type conductive film structure or thin metal sheet.
8. the bilayer conductive film electric connection structure according to claim 1 or 7, is characterized in that: described second conductive film comprises insulating thin layer and conductive metal layer.
9. bilayer conductive film electric connection structure according to claim 8, is characterized in that: described conductive metal layer is arranged at the surface of insulating thin layer or embeds in described insulating thin layer.
10. bilayer conductive film electric connection structure according to claim 1, is characterized in that: described second conductive film is starched by silver and is electrically connected with the emitter of igbt chip, grid and diode chip for backlight unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410066895.9A CN104867891A (en) | 2014-02-26 | 2014-02-26 | Double-layer conductive film electrical connecting structure for IGBT device |
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| CN201410066895.9A CN104867891A (en) | 2014-02-26 | 2014-02-26 | Double-layer conductive film electrical connecting structure for IGBT device |
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Cited By (4)
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| WO2018133069A1 (en) * | 2017-01-22 | 2018-07-26 | 乐健科技（珠海）有限公司 | Igbt module and method for manufacturing same |
| CN113539983A (en) * | 2020-04-22 | 2021-10-22 | 英飞凌科技股份有限公司 | Electronic assembly having a semiconductor die with a low-ohmic portion and a high-ohmic portion with an active region on a dielectric layer |
| CN117425291A (en) * | 2023-10-27 | 2024-01-19 | 浙江晶引电子科技有限公司 | High-reliability electrical connection method of ultrathin flexible film packaging substrate |
| CN118156222A (en) * | 2024-05-13 | 2024-06-07 | 日月新半导体(威海)有限公司 | Packaging module of semiconductor chip and preparation method thereof |
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| CN118156222A (en) * | 2024-05-13 | 2024-06-07 | 日月新半导体(威海)有限公司 | Packaging module of semiconductor chip and preparation method thereof |
| CN118156222B (en) * | 2024-05-13 | 2024-08-06 | 日月新半导体(威海)有限公司 | Packaging module of semiconductor chip and preparation method thereof |
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Application publication date: 20150826 |