CN102097416A - High-power module with novel packaging structure - Google Patents

High-power module with novel packaging structure Download PDF

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Publication number
CN102097416A
CN102097416A CN201010530403.9A CN201010530403A CN102097416A CN 102097416 A CN102097416 A CN 102097416A CN 201010530403 A CN201010530403 A CN 201010530403A CN 102097416 A CN102097416 A CN 102097416A
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China
Prior art keywords
direct copper
substrate
copper substrate
terminal
power
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CN201010530403.9A
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Chinese (zh)
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CN102097416B (en
Inventor
吕镇
金晓行
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SHANGHAI DAOZHI TECHNOLOGY CO., LTD.
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JIAXING STARPOWER MICROELECTRONICS CO Ltd
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Priority to CN201010530403.9A priority Critical patent/CN102097416B/en
Publication of CN102097416A publication Critical patent/CN102097416A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention discloses a high-power module with a novel packaging structure, which comprises a substrate, a direct bonded copper (DBC), an insulated gate bipolar transistor (IGBT) chip, a diode chip, a power terminal, a signal terminal and a casing, wherein the head of the power terminal is provided with a pre-bending structure, the power terminal of the pre-bending structure is bonded with the DBC by means of ultrasonic welding, the signal terminal is provided with weld legs which are bonded with the DBC by means of ultrasonic welding, the casing is provided with a buckle and a nut base, and the buckle is matched with the nut base. The high-power module has the characteristics of high reliability and simple and convenient production process.

Description

A kind of high power module of novel package structure
Technical field
The invention belongs to semiconductor packages and power model field, specifically a kind of high power module of novel package structure.
Background technology:
The insulated gate bipolar transistor module mainly comprises substrate, direct copper substrate (DBC), insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell.When the overall structure in this module is designed, consider thermal design, structural stress design, EMC design and circuit structure design, this also will consider the production cost of deisgn product simultaneously.The subject matter that exists in the existing insulated gate bipolar transistor modular design is low, the complex manufacturing of reliability of products.
Summary of the invention
The objective of the invention is to design a kind of high power module of novel package structure.
The reliability that existing insulated gate bipolar transistor (IGBT) module that the present invention will solve exists is low, the problem of complex manufacturing.
Technical scheme of the present invention is: it comprises substrate, the direct copper substrate, the insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell, substrate and direct copper substrate are by the soldering combination, the insulated gate bipolar transistor chip, between diode chip for backlight unit and the direct copper substrate by the soldering combination, power terminal and direct copper substrate are by the ultra-sonic welded combination, signal terminal and direct copper substrate are equally by the ultra-sonic welded combination, shell and substrate are fixed, the power terminal head structure that pre-bends, the power terminal of this structure that pre-bends combines by ultra-sonic welded with the direct copper substrate, signal terminal is provided with leg, the leg of signal terminal combines by ultra-sonic welded with the direct copper substrate, shell is provided with buckle, nut pedestal, buckle and nut pedestal coupling.
Be distributed with the direct copper substrate of six big power section on the substrate, the direct copper substrate of three little signal sections, six direct copper board structures of power section are identical and be square and arrange, the direct copper board structure of signal section is identical, is located at power section one side and yi word pattern and arranges.
Power section is connected by the bonding aluminum steel with signal section direct copper substrate.The power terminal head pre-bends structure with vertically part is vertical.Outer casing underpart is provided with four nut bore of symmetry, and substrate is provided with screw mounting hole, and nut bore is corresponding with screw mounting hole, is undertaken substrate and shell fastening by screw.
Advantage of the present invention is: reliability height of the present invention, production technology is easy.
Description of drawings
Fig. 1 is internal structure schematic diagram of the present invention (removing shell).
Fig. 2 is an external structure schematic diagram of the present invention.
Fig. 3 is the schematic diagram that signal terminal of the present invention and power terminal are welded in substrate.
Fig. 4 is shell of the present invention and nut pedestal assembling schematic diagram.
Fig. 5 is shell of the present invention and substrate substrate assembling schematic diagram.
Fig. 6 is circuit theory diagrams of the present invention.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
As shown in the figure, the present invention includes substrate 1, insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3, direct copper substrate (DBC) 4, direct copper substrate (DBC) 5, signal terminal 6, signal terminal 7, signal terminal 8, power terminal 9, power terminal 10, shell 11 and nut pedestal 12.Between insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3 and the direct copper substrate (DBC) 4 by the soldering combination.Substrate 1 and direct copper substrate (DBC) 4 and direct copper substrate (DBC) 5 are by the soldering combination.Soldering has six of the big power section direct copper substrates (DBC) 4 of arranging that are square on the substrate 1, separates with the wide raceway groove of 1mm between three direct copper substrates (DBC) 4 of homonymy, separates with the wide raceway groove of 2mm between two groups.Same soldering has three of little signal section to be the direct copper substrate (DBC) 5 that yi word pattern is arranged on the substrate 1, and wherein separates with the wide raceway groove of 2mm between the direct copper substrate (DBC) 4 of a side.
In 4 and three direct copper substrates of described six direct copper substrates (DBC) (DBC) 5, six direct copper substrates (DBC), 4 structures are all identical, and the structure of three direct copper substrates (DBC) 5 is also all identical.Two groups of each three direct copper substrates (DBC) 4 that are distributed in both sides are with substrate center's symmetry.
The collector region of direct copper substrate (DBC) 4 combines by ultrasonic bonding with power terminal 10 legs part, and the emitter region of direct copper substrate (DBC) 4 combines by ultrasonic bonding with power terminal 9 legs part.Three direct copper substrates (DBC) 5 by the bonding aluminum steel respectively with the collector electrode of direct copper substrate (DBC) 4, emitter carries out circuit with gate pole and is connected, signal terminal 6 is provided with leg 6-1, signal terminal 7 is provided with leg 7-1 and signal terminal 8 is provided with leg 8-1, the leg 6-1 of these increases, leg 7-1 and leg 8-1 respectively with three direct copper substrate (DBC) 5 by ultrasonic bonding, the collector electrode that wherein is connected direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 of signal terminal 6 welding, the emitter that is connected direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 of signal terminal 7 welding is connected the gate pole of direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 that signal terminal 8 welds.
Before power terminal and direct copper substrate (DBC) welding, the head of power terminal has been the bending structure by the state bending of design, this bending structure is vertical with the vertical plane of power terminal, avoid before the welding after again the way of bending the welding spot reliability between terminal and the direct copper substrate (DBC) is exerted an adverse impact.Signal terminal has then adopted the bottom to increase the mode that leg is direct and direct copper substrate (DBC) welds, go up will the go between again way of complexity of connection signal terminal of first welding lead at direct copper substrate (DBC) before having changed, increase the soldering reliability of this partial circuit, also increased the current class of this partial circuit.As shown in Figure 3.
Shell 11 is provided with nut pedestal 12.The power terminal head has been bent into the bending structure before the shell envelope, so the position of the power terminal of shell 11 correspondences is six square through holes, and nut pedestal 12 must be placed under the power terminal and to be close to the lower surface of power terminal dogleg section fastening before the shell fit on, shell 11 assemblings is got on after fastening again.Shell 11 has designed buckle structure at six square opening places, and purpose is to block the nut pedestal, and it is fixed on the shell 11, as shown in Figure 4.Install by four pieces of screws 13 that are distributed symmetrically between shell 11 and the substrate 1 fastening, as shown in Figure 5.
As Fig. 1 and inside modules structure and terminal welding schematic diagram shown in Figure 3, realized circuit shown in Figure 6.G, C, E are respectively gate pole, collector and emitter in Fig. 6 circuit theory diagrams.

Claims (5)

1. the high power module of a novel package structure, comprise substrate, the direct copper substrate, the insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell, substrate and direct copper substrate are by the soldering combination, the insulated gate bipolar transistor chip, between diode chip for backlight unit and the direct copper substrate by the soldering combination, power terminal and direct copper substrate are by the ultra-sonic welded combination, signal terminal and direct copper substrate are equally by the ultra-sonic welded combination, shell and substrate are fixed, it is characterized in that the power terminal head structure that pre-bends, the power terminal of this structure that pre-bends combines by ultra-sonic welded with the direct copper substrate, signal terminal is provided with leg, the leg of signal terminal combines by ultra-sonic welded with the direct copper substrate, shell is provided with buckle, nut pedestal, buckle and nut pedestal coupling.
2. the high power module of a kind of novel package structure according to claim 1, it is characterized in that being distributed with on the substrate direct copper substrate of six big power section, the direct copper substrate of three little signal sections, six direct copper board structures of power section are identical and be square and arrange, the direct copper board structure of signal section is identical, is located at power section one side and yi word pattern and arranges.
3. the high power module of a kind of novel package structure according to claim 1 is characterized in that power section is connected by the bonding aluminum steel with signal section direct copper substrate.
4. the high power module of a kind of novel package structure according to claim 1 is characterized in that the power terminal head pre-bends structure with vertically part is vertical.
5. the high power module of a kind of novel package structure according to claim 1 is characterized in that outer casing underpart is provided with four nut bore of symmetry, and substrate is provided with screw mounting hole, and nut bore is corresponding with screw mounting hole.
CN201010530403.9A 2010-11-04 2010-11-04 High-power module with novel packaging structure Active CN102097416B (en)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569271A (en) * 2011-12-28 2012-07-11 嘉兴斯达微电子有限公司 High-reliability high-power insulated gate bipolar transistor (IGBT) module
CN103367284A (en) * 2013-07-04 2013-10-23 株洲南车时代电气股份有限公司 Double-L shaped current sharing stress-resistant IGBT (insulated gate bipolar transistor) module busbar terminal
CN103607102A (en) * 2013-12-04 2014-02-26 西安永电电气有限责任公司 IGBT (Insulated Gate Bipolar Transistor) module and control method thereof
CN103779293A (en) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 Miniwatt insulated gate bipolar transistor full-bridge module
CN103887257A (en) * 2012-12-20 2014-06-25 浙江大学 Low parasitic inductance power electronic module packaging structure
CN104347554A (en) * 2013-07-23 2015-02-11 西安永电电气有限责任公司 Electrode for power semiconductor device
CN104867891A (en) * 2014-02-26 2015-08-26 西安永电电气有限责任公司 Double-layer conductive film electrical connecting structure for IGBT device
CN105789193A (en) * 2016-05-03 2016-07-20 扬州国扬电子有限公司 Power module with insulation separation plate
CN107591377A (en) * 2017-09-12 2018-01-16 华中科技大学 More the DBC encapsulating structures and method for packing of a kind of power device
CN110072335A (en) * 2019-05-30 2019-07-30 环维电子(上海)有限公司 A kind of printed circuit board, electronic equipment and manufacturing method
CN110400794A (en) * 2018-04-25 2019-11-01 株洲中车时代电气股份有限公司 A kind of power semiconductor modular encapsulating structure
CN111162051A (en) * 2019-12-23 2020-05-15 湖南国芯半导体科技有限公司 Power terminal, power module packaging structure and packaging method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1984532A (en) * 2005-12-14 2007-06-20 欧姆龙株式会社 Power module structure, and soild state relay using the same
CN101304010A (en) * 2008-06-20 2008-11-12 南京银茂微电子制造有限公司 Thin type power module
CN201508835U (en) * 2009-04-02 2010-06-16 嘉兴斯达微电子有限公司 Novel insulated gate bipolar transistor module with direct copper-clad base plate
CN201845771U (en) * 2010-11-04 2011-05-25 嘉兴斯达微电子有限公司 High-power module with novel encapsulating structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1984532A (en) * 2005-12-14 2007-06-20 欧姆龙株式会社 Power module structure, and soild state relay using the same
CN101304010A (en) * 2008-06-20 2008-11-12 南京银茂微电子制造有限公司 Thin type power module
CN201508835U (en) * 2009-04-02 2010-06-16 嘉兴斯达微电子有限公司 Novel insulated gate bipolar transistor module with direct copper-clad base plate
CN201845771U (en) * 2010-11-04 2011-05-25 嘉兴斯达微电子有限公司 High-power module with novel encapsulating structure

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569271A (en) * 2011-12-28 2012-07-11 嘉兴斯达微电子有限公司 High-reliability high-power insulated gate bipolar transistor (IGBT) module
CN103887257A (en) * 2012-12-20 2014-06-25 浙江大学 Low parasitic inductance power electronic module packaging structure
CN103367284A (en) * 2013-07-04 2013-10-23 株洲南车时代电气股份有限公司 Double-L shaped current sharing stress-resistant IGBT (insulated gate bipolar transistor) module busbar terminal
CN104347554A (en) * 2013-07-23 2015-02-11 西安永电电气有限责任公司 Electrode for power semiconductor device
CN103607102A (en) * 2013-12-04 2014-02-26 西安永电电气有限责任公司 IGBT (Insulated Gate Bipolar Transistor) module and control method thereof
CN103779293B (en) * 2014-01-24 2016-08-24 嘉兴斯达微电子有限公司 A kind of small-power insulated gate bipolar transistor full-bridge modules
CN103779293A (en) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 Miniwatt insulated gate bipolar transistor full-bridge module
CN104867891A (en) * 2014-02-26 2015-08-26 西安永电电气有限责任公司 Double-layer conductive film electrical connecting structure for IGBT device
CN105789193A (en) * 2016-05-03 2016-07-20 扬州国扬电子有限公司 Power module with insulation separation plate
CN105789193B (en) * 2016-05-03 2018-09-28 扬州国扬电子有限公司 A kind of power module equipped with insulating barrier
CN107591377A (en) * 2017-09-12 2018-01-16 华中科技大学 More the DBC encapsulating structures and method for packing of a kind of power device
CN107591377B (en) * 2017-09-12 2019-09-06 华中科技大学 A kind of more DBC encapsulating structures and packaging method of power device
CN110400794A (en) * 2018-04-25 2019-11-01 株洲中车时代电气股份有限公司 A kind of power semiconductor modular encapsulating structure
CN110400794B (en) * 2018-04-25 2021-09-07 株洲中车时代半导体有限公司 Power semiconductor module packaging structure
CN110072335A (en) * 2019-05-30 2019-07-30 环维电子(上海)有限公司 A kind of printed circuit board, electronic equipment and manufacturing method
CN111162051A (en) * 2019-12-23 2020-05-15 湖南国芯半导体科技有限公司 Power terminal, power module packaging structure and packaging method
CN111162051B (en) * 2019-12-23 2021-08-03 湖南国芯半导体科技有限公司 Power terminal, power module packaging structure and packaging method

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Effective date of registration: 20160718

Address after: 201800 Shanghai City, Jiading District Hui Yan Road No. 1899 Building 5 floor 1 B zone

Patentee after: SHANGHAI DAOZHI TECHNOLOGY CO., LTD.

Address before: Sidalu in Nanhu District of Jiaxing city of Zhejiang Province, No. 18 314000

Patentee before: Jiaxing Starpower Microelectronics Co., Ltd.