CN102097416B - High-power module with novel packaging structure - Google Patents
High-power module with novel packaging structure Download PDFInfo
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- CN102097416B CN102097416B CN201010530403.9A CN201010530403A CN102097416B CN 102097416 B CN102097416 B CN 102097416B CN 201010530403 A CN201010530403 A CN 201010530403A CN 102097416 B CN102097416 B CN 102097416B
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- direct copper
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- copper substrate
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- power
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
The invention discloses a high-power module with a novel packaging structure, which comprises a substrate, a direct bonded copper (DBC), an insulated gate bipolar transistor (IGBT) chip, a diode chip, a power terminal, a signal terminal and a casing, wherein the head of the power terminal is provided with a pre-bending structure, the power terminal of the pre-bending structure is bonded with the DBC by means of ultrasonic welding, the signal terminal is provided with weld legs which are bonded with the DBC by means of ultrasonic welding, the casing is provided with a buckle and a nut base, and the buckle is matched with the nut base. The high-power module has the characteristics of high reliability and simple and convenient production process.
Description
Technical field
The invention belongs to semiconductor packages and power model field, specifically a kind of high power module of novel package structure.
Background technology:
The insulated gate bipolar transistor module mainly comprises substrate, direct copper substrate (DBC), insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell.When the overall structure in this module is designed, consider thermal design, structural stress design, EMC design and circuit structure design, this also will consider the production cost of deisgn product simultaneously.The subject matter that exists in the existing insulated gate bipolar transistor modular design is low, the complex manufacturing of reliability of products.
Summary of the invention
The objective of the invention is to design a kind of high power module of novel package structure.
The reliability that existing insulated gate bipolar transistor (IGBT) module that the present invention will solve exists is low, the problem of complex manufacturing.
Technical scheme of the present invention is: it comprises substrate, direct copper substrate, insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell; Substrate and direct copper substrate combine through soldering, combine through soldering between insulated gate bipolar transistor chip, diode chip for backlight unit and the direct copper substrate, and power terminal and direct copper substrate combine through ultra-sonic welded; Signal terminal and direct copper substrate combine through ultra-sonic welded equally; Shell and substrate are fixed, the power terminal head structure that pre-bends, and the power terminal of this structure that pre-bends combines through ultra-sonic welded with the direct copper substrate; Signal terminal is provided with leg; The leg of signal terminal combines through ultra-sonic welded with the direct copper substrate, and shell is provided with buckle, nut pedestal, buckle and nut pedestal coupling.
Be distributed with the direct copper substrate of six big power section on the substrate; The direct copper substrate of three little signal sections; Six direct copper board structures of power section are identical and be square and arrange; The direct copper board structure of signal section is identical, is located at power section one side and yi word pattern and arranges.
Power section is connected through the bonding aluminum steel with signal section direct copper substrate.The power terminal head pre-bends structure with vertically part is vertical.Outer casing underpart is provided with four nut bore of symmetry, and substrate is provided with screw mounting hole, and nut bore is corresponding with screw mounting hole, carries out substrate and shell fastening through screw.
Advantage of the present invention is: reliability of the present invention is high, and production technology is easy.
Description of drawings
Fig. 1 is internal structure sketch map of the present invention (removing shell).
Fig. 2 is an external structure sketch map of the present invention.
Fig. 3 is the sketch map that signal terminal of the present invention and power terminal are welded in substrate.
Fig. 4 is shell of the present invention and nut pedestal assembling sketch map.
Fig. 5 is shell of the present invention and substrate substrate assembling sketch map.
Fig. 6 is circuit theory diagrams of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is described further.
As shown in the figure, the present invention includes substrate 1, insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3, direct copper substrate (DBC) 4, direct copper substrate (DBC) 5, signal terminal 6, signal terminal 7, signal terminal 8, power terminal 9, power terminal 10, shell 11 and nut pedestal 12.Insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3 and direct copper substrate (DBC) combine through soldering between 4.Substrate 1 combines through soldering with direct copper substrate (DBC) 4 and direct copper substrate (DBC) 5.Soldering has six of the big power section direct copper substrates (DBC) 4 of arranging that are square on the substrate 1, and three direct copper substrates (DBC) of homonymy separate with the wide raceway groove of 1mm between 4, separate with the wide raceway groove of 2mm between two groups.Same soldering has three of little signal section to be the direct copper substrate (DBC) 5 that yi word pattern is arranged on the substrate 1, and wherein the direct copper substrate (DBC) of a side separates with the wide raceway groove of 2mm between 4.
In 4 and three direct copper substrates of described six direct copper substrates (DBC) (DBC) 5, six direct copper substrates (DBC), 4 structures are all identical, and the structure of three direct copper substrates (DBC) 5 is also all identical.Two groups of each three direct copper substrate (DBC) 4 that are distributed in both sides are with substrate center's symmetry.
The collector region of direct copper substrate (DBC) 4 partly combines through ultrasonic bonding with power terminal 10 legs, and the emitter region of direct copper substrate (DBC) 4 partly combines through ultrasonic bonding with power terminal 9 legs.Three direct copper substrates (DBC) 5 carry out circuit with collector electrode, emitter and the gate pole of direct copper substrate (DBC) 4 respectively through the bonding aluminum steel and are connected; Signal terminal 6 is provided with leg 6-1, signal terminal 7 is provided with leg 7-1 and signal terminal 8 is provided with leg 8-1; The leg 6-1 of these increases, leg 7-1 and leg 8-1 respectively with three direct copper substrate (DBC) 5 through ultrasonic bonding; The collector electrode that wherein is connected direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 of signal terminal 6 welding; The emitter that is connected direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 of signal terminal 7 welding is connected the gate pole of direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 that signal terminal 8 welds.
Before power terminal and direct copper substrate (DBC) welding; The head of power terminal has been the bending structure by the state bending of design; This bending structure is vertical with the vertical plane of power terminal, avoid before the welding after again the way of bending the welding spot reliability between terminal and the direct copper substrate (DBC) is exerted an adverse impact.Signal terminal has then adopted the bottom to increase the mode that leg is direct and direct copper substrate (DBC) welds; Go up will the go between again way of complicacy of connection signal terminal of first welding lead at direct copper substrate (DBC) before having changed; Increase the soldering reliability of this partial circuit, also increased the current class of this partial circuit.As shown in Figure 3.
Like Fig. 1 and inside modules structure and terminal welding sketch map shown in Figure 3, realized circuit shown in Figure 6.G, C, E are respectively gate pole, collector and emitter in Fig. 6 circuit theory diagrams.
Claims (4)
1. the high power module of an encapsulating structure; Comprise substrate, direct copper substrate, insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell; Substrate and direct copper substrate combine through soldering, combine through soldering between insulated gate bipolar transistor chip, diode chip for backlight unit and the direct copper substrate, and power terminal and direct copper substrate combine through ultra-sonic welded; Signal terminal and direct copper substrate combine through ultra-sonic welded equally; Shell and substrate are fixed, and it is characterized in that the power terminal head structure that pre-bends, and the power terminal of this structure that pre-bends combines through ultra-sonic welded with the direct copper substrate; Signal terminal is provided with leg; The leg of signal terminal combines through ultra-sonic welded with the direct copper substrate, and shell is provided with buckle, nut pedestal, buckle and nut pedestal coupling;
Be distributed with the direct copper substrate of six big power section on the substrate; The direct copper substrate of three little signal sections; Six direct copper board structures of power section are identical and be square and arrange; The direct copper board structure of signal section is identical, is located at power section one side and yi word pattern and arranges.
2. the high power module of a kind of encapsulating structure according to claim 1 is characterized in that the direct copper substrate of power section and the direct copper substrate of signal section are connected through the bonding aluminum steel.
3. the high power module of a kind of encapsulating structure according to claim 1 is characterized in that the power terminal head pre-bends structure with vertically part is vertical.
4. the high power module of a kind of encapsulating structure according to claim 1 is characterized in that outer casing underpart is provided with four nut bore of symmetry, and substrate is provided with screw mounting hole, and nut bore is corresponding with screw mounting hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010530403.9A CN102097416B (en) | 2010-11-04 | 2010-11-04 | High-power module with novel packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010530403.9A CN102097416B (en) | 2010-11-04 | 2010-11-04 | High-power module with novel packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102097416A CN102097416A (en) | 2011-06-15 |
| CN102097416B true CN102097416B (en) | 2012-11-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201010530403.9A Active CN102097416B (en) | 2010-11-04 | 2010-11-04 | High-power module with novel packaging structure |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569271A (en) * | 2011-12-28 | 2012-07-11 | 嘉兴斯达微电子有限公司 | High-reliability high-power insulated gate bipolar transistor (IGBT) module |
| CN103887257A (en) * | 2012-12-20 | 2014-06-25 | 浙江大学 | Low parasitic inductance power electronic module packaging structure |
| CN103367284A (en) * | 2013-07-04 | 2013-10-23 | 株洲南车时代电气股份有限公司 | Double-L shaped current sharing stress-resistant IGBT (insulated gate bipolar transistor) module busbar terminal |
| CN104347554A (en) * | 2013-07-23 | 2015-02-11 | 西安永电电气有限责任公司 | Electrode for power semiconductor device |
| CN103607102A (en) * | 2013-12-04 | 2014-02-26 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Transistor) module and control method thereof |
| CN103779293B (en) * | 2014-01-24 | 2016-08-24 | 嘉兴斯达微电子有限公司 | A kind of small-power insulated gate bipolar transistor full-bridge modules |
| CN104867891A (en) * | 2014-02-26 | 2015-08-26 | 西安永电电气有限责任公司 | Double-layer conductive film electrical connecting structure for IGBT device |
| CN105789193B (en) * | 2016-05-03 | 2018-09-28 | 扬州国扬电子有限公司 | A kind of power module equipped with insulating barrier |
| CN107591377B (en) * | 2017-09-12 | 2019-09-06 | 华中科技大学 | A kind of more DBC encapsulating structures and packaging method of power device |
| CN110400794B (en) * | 2018-04-25 | 2021-09-07 | 株洲中车时代半导体有限公司 | Power semiconductor module packaging structure |
| CN110072335B (en) * | 2019-05-30 | 2021-03-02 | 环维电子(上海)有限公司 | Printed circuit board, electronic equipment and manufacturing method |
| CN111162051B (en) * | 2019-12-23 | 2021-08-03 | 湖南国芯半导体科技有限公司 | Power terminal, power module packaging structure and packaging method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1984532A (en) * | 2005-12-14 | 2007-06-20 | 欧姆龙株式会社 | Power module structure, and soild state relay using the same |
| CN101304010A (en) * | 2008-06-20 | 2008-11-12 | 南京银茂微电子制造有限公司 | Thin type power module |
| CN201508835U (en) * | 2009-04-02 | 2010-06-16 | 嘉兴斯达微电子有限公司 | Novel insulated gate bipolar transistor module with direct copper-clad base plate |
| CN201845771U (en) * | 2010-11-04 | 2011-05-25 | 嘉兴斯达微电子有限公司 | High-power module with novel encapsulating structure |
-
2010
- 2010-11-04 CN CN201010530403.9A patent/CN102097416B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1984532A (en) * | 2005-12-14 | 2007-06-20 | 欧姆龙株式会社 | Power module structure, and soild state relay using the same |
| CN101304010A (en) * | 2008-06-20 | 2008-11-12 | 南京银茂微电子制造有限公司 | Thin type power module |
| CN201508835U (en) * | 2009-04-02 | 2010-06-16 | 嘉兴斯达微电子有限公司 | Novel insulated gate bipolar transistor module with direct copper-clad base plate |
| CN201845771U (en) * | 2010-11-04 | 2011-05-25 | 嘉兴斯达微电子有限公司 | High-power module with novel encapsulating structure |
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| Publication number | Publication date |
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| CN102097416A (en) | 2011-06-15 |
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Effective date of registration: 20160718 Address after: 201800 Shanghai City, Jiading District Hui Yan Road No. 1899 Building 5 floor 1 B zone Patentee after: SHANGHAI DAOZHI TECHNOLOGY CO., LTD. Address before: Sidalu in Nanhu District of Jiaxing city of Zhejiang Province, No. 18 314000 Patentee before: Jiaxing Starpower Microelectronics Co., Ltd. |