CN101304010A - Thin type power module - Google Patents

Thin type power module Download PDF

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Publication number
CN101304010A
CN101304010A CN200810122913.5A CN200810122913A CN101304010A CN 101304010 A CN101304010 A CN 101304010A CN 200810122913 A CN200810122913 A CN 200810122913A CN 101304010 A CN101304010 A CN 101304010A
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CN
China
Prior art keywords
power supply
supply terminal
formwork
power
model according
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Pending
Application number
CN200810122913.5A
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Chinese (zh)
Inventor
庄伟东
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NANJING YINMAO MICROELECTRONIC MANUFACTURING CO LTD
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NANJING YINMAO MICROELECTRONIC MANUFACTURING CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by NANJING YINMAO MICROELECTRONIC MANUFACTURING CO LTD filed Critical NANJING YINMAO MICROELECTRONIC MANUFACTURING CO LTD
Priority to CN200810122913.5A priority Critical patent/CN101304010A/en
Publication of CN101304010A publication Critical patent/CN101304010A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to a thin power module, which comprises a head cover and a base. The base comprises a soleplate and a shuttering around the soleplate, and the shuttering is adhesively connected with the soleplate. The soleplate is provided with a ceramic substrate on the bottom layer, the upper face of the ceramic substrate is provided with a thin metal layer which is directly combined with the ceramic substrate to form a DBC substrate, on which chips are distributed and welded; the front and the back sides of the shuttering extend upward, and the left and the right sides respectively extend outward and upward. The shuttering is provided with mounting holes on the left end and the right end, and a metal ring of a mounting hole and the module shell are integrally formed. The shuttering is also provided with a power supply terminal slot, to which a power supply terminal is inserted and the power supply terminal is integrally formed with the shell by injection molding. A socket provided with a nut is arranged at a position on the head cover corresponding to the power supply terminal slot and the head cover is fixedly connected with the base. The thin power module eliminates welding fatigue and greatly enhances the reliability of temperature cycling.

Description

A kind of thin type power module
Technical field
The present invention relates to a kind of power model device, more specifically to a kind of thin type power module with industrial standard installation and bus linkage function.
Background technology
Power IGBT (insulated gate bipolar transistor) and MOSFET (mos field effect transistor) module are widely used in the various Electric Machine Control frequency converters, and for energy-conservation, systematic function and reliability, these modules are crucial electronic components.These power components also are used for Switching Power Supply, UPS, medical system, grid-connected power generation system (solar energy, wind energy, fuel cell etc.), transportation system's (bullet train, subway), commercial aircraft and national defense system.Power IGBT and MOSFET module forward high power density, high reliability and low-cost direction develop.
Power model is generally according to module width name, " 34mm " IGBT module for example, and the base width is 34mm, installing hole is apart from being 80mm.According to design, this kind of power model can provide 50A electric current to 200A, charged single IGBT or the MOSFET of disposing, half-bridge IGBT or MOSFET, and IGBT band upper arm or underarm fast recovery diode (chopper).Based on its power output capacity, this module is highly suitable for mid power output system (hundred multikilowatts), and has a wide range of applications in a lot of inversion systems.So this module has become a kind of industrial standard module, a plurality of power model company is just at production and selling.
Existing power model 200 comprises plastic casing 20 and base plate 40 in typical case, and its structure as depicted in figs. 1 and 2.Copper base plate 40 thick about 3mm, cross-section structure is seen Fig. 4, base plate 40 is established DBC (directly copper bonding) layer 30 and copper basalis 27 from top to bottom successively, DBC layer 30 is welded on the copper basalis 27 by weld layer 26, and DBC (directly copper bonding) layer 30 comprises ceramic substrate 24 and its thin copper layer 23,24 of both sides up and down.Be distributed with chip layer 21 on DBC layer 30, chip layer 21 is welded on the DBC layer 30 by weld layer 22.As shown in Figure 3, also be welded with power supply terminal 29 on the DBC layer 30, the both ends of copper basalis 27 are provided with an installing hole 28 respectively.As shown in Figure 1, the top of plastic casing is provided with and power supply terminal 29 corresponding power supply terminal holes, a M5 nut 32 is arranged under each power supply terminal hole, the power supply terminal 29 that is soldered on the DBC layer of base plate passes the power supply terminal hole, M5 nut 32 is used for reliably connecting busbar and bus together with packing ring, the hub of M5 nut also is the part of whole plastic casing, and plastic casing also is provided with the copper signal terminal.Plastic casing and base plate are bonding, and module height overall (from the power supply terminal end face to the base plate bottom surface) is about 30mm.In sum, this pattern piece has following characteristics:
1. adopt the copper soleplate of high heat conduction, make module have lower thermal resistance.
2. base plate carries double mounting port, makes module be easy to be installed on the radiator.
3. power supply terminal adopts screw/nut crimping, makes module can export bigger electric current, the fatigue cracking of having avoided soldering to bring simultaneously.
In some new application, as composite power and electrically driven vehicle, environmental requirement for power and temperature cycles and specification is very high, existing power model adopts weld layer (weld layer b among the figure) to connect DBC layer and base plate, solder joint fatigue appears in pad easily, and temperature cycles and power cycle capacity are reduced greatly.Because it is big to be welded to connect area between DBC and base plate, and the thermal coefficient of expansion (CTE) of copper soleplate and DBC layer differs greatly, during variations in temperature, this is welded to connect and bears very big stress, solder joint fatigue causes weld cracking, causes the power model thermal resistance constantly to increase, and causes the module premature failure by thermal runaway.On the other hand, the power supply terminal of this kind of module is to be welded direct on the DBC substrate.Because the difference of CTE between copper tip and the DBC substrate, in the use of module, variation of temperature will cause these pads and produce bigger thermal stress, thereby cause the thermal fatigue cracking of solder joint, and then make the module premature failure.Though can slow down stress design (S type bottom) at the copper tip bottom, its effect is limited, and the stray inductance of unfavorable reduction module.So in order to adapt to the needs in market better, existing this kind of reliability of Power Modules awaits further raising.
Summary of the invention
Purpose of the present invention overcomes the defective of prior art, provides a kind of cost low and reliability is high, and electric current output surpasses the power model of 200A.
The technical scheme that realizes the object of the invention is: a kind of slim high-current power module, comprise top cover and base, and described base comprises base plate and at base plate periphery formwork; The bottom of base plate is a ceramic substrate, and top (towards the inside modules) of ceramic substrate is provided with thin metal layer, and thin metal layer and ceramic substrate directly in conjunction with forming DBC substrate (metal substrate), are distributed with chip on the DBC substrate, and chips welding is on the DBC substrate; The two sides, front and back of described formwork extend upward, and outwards and is upwards extending on the both direction respectively the left and right sides; The DBC substrate is furnished with chip one side and formwork is sealing adhesive; The two ends, the left and right sides of formwork are respectively equipped with installing hole, and the becket and the module housing of installing hole are one-body molded, but limiting module is in the displacement of spreader surface vertical direction when module is installed, and excessive moment of torsion is to the infringement of ceramic substrate in the time of can effectively preventing to install.Also be provided with the power supply terminal slot on the described die housing, power supply terminal inserts the power supply terminal slot, and with the housing integrated injection molding.The power supply terminal bottom is the required metal flat of bonding, and realizes that with the metal level on chip and the ceramic substrate circuit is connected by bonding wire; Bonding wire is generally the high-purity aluminum steel, and can design the quantity of bonding wire by the size of module output current; Because the highly-malleable of bonding wire can be eliminated the thermal stress between above-mentioned power supply terminal and the DBC substrate basically, thereby the reliability of modular power source terminal under the temperature cycles condition is significantly improved; Be provided with the socket of band nut on the described top cover with the corresponding position of described power supply terminal slot; Described top cover is fixedlyed connected with base.
Described power supply terminal slot and power supply terminal are generally 3, are located at the same side of formwork or three sides, and mounting distance equates each other, can directly replace existing power model.
Described DBC substrate back is used for installing and heat radiation, also can be provided with thin metal layer.Described thin metal layer generally adopts thin copper layer.For guaranteeing the radiating effect of DBC substrate back, the DBC substrate is installed its substrate back of back can exceed certain distance than housing installing hole ground.This distance is controlled between the 0.05mm to 0.2mm usually.
As a further improvement on the present invention; between the installing hole at the two ends, bottom of described formwork, be provided with stress hole or stress groove; has the function that reduces peak stress; can guarantee at power model when being heated and mechanical impact takes place; housing produces certain deformation; the peak stress that restriction DBC substrate is suffered, protection DBC substrate is intact.
The present invention has cancelled the copper soleplate in the existing power model and base plate has been connected to weld layer on the DBC substrate, and this has eliminated solder joint fatigue, and has improved the reliability for temperature cycles greatly.Owing to cancelled copper soleplate, and designed new housing, the height of power model is reduced, become thin type power module.
Description of drawings
Fig. 1 is the structural representation of background technology of the present invention
Fig. 2 is a base arrangement schematic diagram in the background technology of the present invention
Fig. 3 is a base plate cross-sectional view in the background technology of the present invention
Fig. 4 is a plastic casing structural representation in the background technology of the present invention
Fig. 5 is the thin type power module structural representation of the embodiment of the invention
Fig. 6 is the thin type power module contour structures schematic diagram of the embodiment of the invention
Fig. 7 is a base back surface structural representation in the embodiment of the invention
Fig. 8 is a base plate cross-sectional view in the embodiment of the invention
Fig. 9 is a base plate cross-sectional view among the another kind of embodiment of the present invention
Embodiment
Be described further below in conjunction with embodiment.
As shown in Figure 5, a kind of thin type power module 100 comprises top cover 2 and base 1, and base 1 comprises base plate 3 and at base plate periphery formwork 9, formwork 9 is bonding with base plate 3, is distributed with chip 4 on DBC substrate 3, and chip 4 is welded on the DBC substrate 15.The two sides, front and back of formwork 4 extend upward, be provided with 3 power supply terminal slots 5 in front side edge, adjacent two power supply terminal slots, 5 equidistant settings are respectively equipped with power supply terminal 6 in the power supply terminal slot 5, power supply terminal 6 forms circuit by bonding wire at bonding surface 7 with DBC substrate 15 and is connected.Be provided with band nut socket 8 with the corresponding position of described power supply terminal slot on the top cover 2.
Outwards and is upwards extending on the both direction respectively formwork 4 left and right sides, and the two ends, the left and right sides of formwork 4 are respectively equipped with installing hole 10, and an end also is provided with signal terminal 11 therein.Signal terminal 11 and formwork 4 integrated injection moldings, and be connected by bonding wire with DBC substrate 15.
Top cover 2 usefulness lock screw are fixedlyed connected with base 1, thin type power module 100 contour structures after the installation as shown in Figure 6, best length is of a size of 94mm * 34mm * 17mm, the 30mm of its aspect ratio existing power supply module reduces 40%, so under the same current rated value, power density of the present invention is higher.
As shown in Figure 7, also be respectively equipped with stress hole 12, one ends at the two ends, the left and right sides of formwork 9 and make trapezoidal shape, to reduce the stressed of DBC substrate 15.
As shown in Figure 8, the bottom of base plate 3 is a ceramic substrate 13, and the material of ceramic substrate 13 is Al 2O 3, AlN or Si 3N 4, being provided with thin copper layer 14 above the ceramic substrate 13, directly in conjunction with forming DBC substrate (copper substrate) 15, DBC substrate 15 back sides are used for installing and heat radiation for thin copper layer 14 and ceramic substrate 13.
Chip 4 is connected with thin copper layer 14 by weld layer 16.The base plate that promptly is provided with chip 4 positions is provided with chip 4, weld layer 16, thin copper layer 14 and ceramic substrate 13 from top to bottom successively.
As shown in Figure 9, Fig. 9 is the another kind of embodiment of base plate 3, and ceramic substrate 13 back sides also are provided with thin copper layer 17, ceramic substrate 13 and its up and down thin copper layer 14 and thin copper layer down 17 directly in conjunction with formation DBC substrates (copper substrate) 15.The base plate that promptly is provided with chip 4 positions is provided with chip 4, weld layer 16, thin copper layer 14, ceramic substrate 13 and thin copper layer 17 from top to bottom successively.

Claims (8)

1, a kind of thin type power module, comprise top cover and base, it is characterized in that, described base comprises base plate and at base plate periphery formwork, formwork and base plate are bonding, and the bottom of base plate is a ceramic substrate, be provided with thin metal layer above the ceramic substrate, thin metal layer and ceramic substrate directly in conjunction with forming the DBC substrate, are distributed with chip on the DBC substrate, chips welding is on the DBC substrate; The two sides, front and back of described formwork extend upward, outwards and is upwards extending on the both direction respectively the left and right sides, formwork two ends, the left and right sides be respectively equipped with installing hole, the becket and the module housing of installing hole are one-body molded, also be provided with the power supply terminal slot on the described formwork, power supply terminal inserts the power supply terminal slot, and with the housing integrated injection molding; Be provided with the socket of band nut on the described top cover with the corresponding position of described power supply terminal slot; Described top cover is fixedlyed connected with base.
2, power model according to claim 1 is characterized in that, described power supply terminal slot is 3, is located at formwork one side, and mounting distance equates each other.
3, power model according to claim 1 is characterized in that, is provided with stress hole or stress groove at the two ends of described formwork.
4, power model according to claim 1 is characterized in that, described DBC substrate back is provided with thin metal layer.
5, power model according to claim 1 is characterized in that, described thin metal layer is a thin copper layer.
6, power model according to claim 1 is characterized in that, described formwork about the end in an end be provided with signal terminal.
7, power model according to claim 1 is characterized in that, an end of described power supply is trapezoidal.
8, power model according to claim 1 is characterized in that, the length of described power supply is of a size of 94mm * 34mm * 17mm.
CN200810122913.5A 2008-06-20 2008-06-20 Thin type power module Pending CN101304010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200810122913.5A CN101304010A (en) 2008-06-20 2008-06-20 Thin type power module

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Application Number Priority Date Filing Date Title
CN200810122913.5A CN101304010A (en) 2008-06-20 2008-06-20 Thin type power module

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Publication Number Publication Date
CN101304010A true CN101304010A (en) 2008-11-12

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101847849A (en) * 2010-04-14 2010-09-29 苏州快可光伏电子有限公司 Waterproof solar wiring box
CN102097416A (en) * 2010-11-04 2011-06-15 嘉兴斯达微电子有限公司 High-power module with novel packaging structure
CN101453159B (en) * 2008-12-26 2012-02-29 南京银茂微电子制造有限公司 Power terminal having built-in power terminal
CN102446910A (en) * 2011-12-28 2012-05-09 嘉兴斯达微电子有限公司 Novel high-power module
CN102738099A (en) * 2012-06-05 2012-10-17 嘉兴斯达微电子有限公司 Novel high-reliability power module
CN103066042A (en) * 2012-12-31 2013-04-24 江苏宏微科技股份有限公司 Connection structure of power module electrode terminals
CN103299421A (en) * 2011-07-28 2013-09-11 富士电机株式会社 Semiconductor device and method for producing a semiconductor device
CN103295980A (en) * 2012-03-05 2013-09-11 上海沪通企业集团有限公司 Single tube IGBT encapsulation full-bridge module and encapsulation method thereof
CN103779293A (en) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 Miniwatt insulated gate bipolar transistor full-bridge module
CN104218032A (en) * 2013-06-04 2014-12-17 富士电机株式会社 Semiconductor device
CN104979674A (en) * 2014-04-07 2015-10-14 矢崎总业株式会社 Component unit
EP4095901A1 (en) * 2021-05-26 2022-11-30 Infineon Technologies Austria AG A semiconductor device with improved performance in operation and improved flexibility in the arrangement of power chips

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101453159B (en) * 2008-12-26 2012-02-29 南京银茂微电子制造有限公司 Power terminal having built-in power terminal
CN101847849A (en) * 2010-04-14 2010-09-29 苏州快可光伏电子有限公司 Waterproof solar wiring box
CN102097416A (en) * 2010-11-04 2011-06-15 嘉兴斯达微电子有限公司 High-power module with novel packaging structure
CN102097416B (en) * 2010-11-04 2012-11-14 嘉兴斯达微电子有限公司 High-power module with novel packaging structure
CN103299421B (en) * 2011-07-28 2016-03-16 富士电机株式会社 The manufacture method of semiconductor device and semiconductor device
CN103299421A (en) * 2011-07-28 2013-09-11 富士电机株式会社 Semiconductor device and method for producing a semiconductor device
CN102446910A (en) * 2011-12-28 2012-05-09 嘉兴斯达微电子有限公司 Novel high-power module
CN103295980B (en) * 2012-03-05 2016-01-13 上海沪通企业集团有限公司 Single tube IGBT encapsulates full-bridge modules and method for packing thereof
CN103295980A (en) * 2012-03-05 2013-09-11 上海沪通企业集团有限公司 Single tube IGBT encapsulation full-bridge module and encapsulation method thereof
CN102738099A (en) * 2012-06-05 2012-10-17 嘉兴斯达微电子有限公司 Novel high-reliability power module
CN103066042B (en) * 2012-12-31 2015-07-15 江苏宏微科技股份有限公司 Connection structure of power module electrode terminals
CN103066042A (en) * 2012-12-31 2013-04-24 江苏宏微科技股份有限公司 Connection structure of power module electrode terminals
CN104218032A (en) * 2013-06-04 2014-12-17 富士电机株式会社 Semiconductor device
CN104218032B (en) * 2013-06-04 2018-05-08 富士电机株式会社 Semiconductor device
CN103779293A (en) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 Miniwatt insulated gate bipolar transistor full-bridge module
CN103779293B (en) * 2014-01-24 2016-08-24 嘉兴斯达微电子有限公司 A kind of small-power insulated gate bipolar transistor full-bridge modules
CN104979674A (en) * 2014-04-07 2015-10-14 矢崎总业株式会社 Component unit
EP4095901A1 (en) * 2021-05-26 2022-11-30 Infineon Technologies Austria AG A semiconductor device with improved performance in operation and improved flexibility in the arrangement of power chips

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Open date: 20081112