CN103779293A - Miniwatt insulated gate bipolar transistor full-bridge module - Google Patents
Miniwatt insulated gate bipolar transistor full-bridge module Download PDFInfo
- Publication number
- CN103779293A CN103779293A CN201410033919.0A CN201410033919A CN103779293A CN 103779293 A CN103779293 A CN 103779293A CN 201410033919 A CN201410033919 A CN 201410033919A CN 103779293 A CN103779293 A CN 103779293A
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- Prior art keywords
- substrate
- bipolar transistor
- insulated gate
- gate bipolar
- direct copper
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- 239000000758 substrate Substances 0.000 claims abstract description 100
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052802 copper Inorganic materials 0.000 claims abstract description 98
- 239000010949 copper Substances 0.000 claims abstract description 98
- 238000005476 soldering Methods 0.000 claims description 26
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005219 brazing Methods 0.000 abstract 3
- 238000001816 cooling Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A miniwatt insulated gate bipolar transistor full-bridge module mainly comprises a substrate, direct bonded copper substrates, an insulated gate bipolar transistor chip, a diode chip, a power terminal, a signal terminal, a casing and a clamping ring, wherein the substrate and the direct bonded copper substrates are combined through brazing, the insulated gate bipolar transistor chip, the diode chip and the direct bonded copper substrates are combined through brazing, the power terminal and the direct bonded copper substrates are combined through brazing, the substrate is the copper substrate and serves as the cooling bottom plate, and the copper substrate and the casing are combined and fixed through the casing and the clamping ring. Two direct bonded copper substrates different in structures are distributed on the copper substrate, in a shape of a straight line along the length direction of the copper substrate and symmetrical about the center line. A channel with the width of 0.8mm-1.2mm is reserved between the two direct bonded copper substrates. The miniwatt insulated gate bipolar transistor full-bridge module has the advantages of being good in cooling performance and low in production and material cost.
Description
Technical field
What the present invention relates to is a kind of small-power insulated gate bipolar transistor full-bridge module, belongs to semiconductor packages and power model technical field.
Background technology
Insulated gate bipolar transistor full-bridge module mainly comprises substrate, direct copper substrate (DBC), insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal, shell and snap ring.In the time that the overall structure in this module is designed, consider thermal design, structural stress design, EMC design and circuit structure design, to consider in addition the production cost of deisgn product simultaneously; The subject matter existing in existing small-power insulated gate bipolar transistor full-bridge modular design is that the heat dispersion of product is poor, production cost is high.
Summary of the invention
The object of the invention is to overcome the deficiency that prior art exists, and provide a kind of rational in infrastructure, compact, easy to use, good reliability, perfect heat-dissipating, the insulated gate bipolar transistor full-bridge module that can reduce production costs.
The object of the invention is to complete by following technical solution, described small-power insulated gate bipolar transistor full-bridge module, it mainly comprises substrate, direct copper substrate, insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal, shell and snap ring, described substrate and direct copper substrate are by soldering combination, insulated gate bipolar transistor chip, between diode chip for backlight unit and direct copper substrate by soldering combination, power terminal and direct copper substrate are also by soldering combination, described substrate adopts copper base and as radiating bottom plate, described copper base is combined fixing with shell by snap ring and fluid sealant.
Described copper base is distributed with the different direct copper substrate of two block structures, and two direct copper substrates are yi word pattern arrangement and symmetrical with its center line at copper base length direction; Between two direct copper substrates, leave the wide raceway groove of 0.8-1.2mm.
Described copper base is selected the size of long 90mm × wide 43mm; The ceramic edge of the edge of copper base and described direct copper substrate retains the distance of one-sided 4mm on Width, retains in the longitudinal direction the distance of one-sided 13.2mm.
On direct copper substrate of the present invention, be connected with four power terminals, the leg part that is wherein combined with the first power terminal in the collector region of a direct bonded copper base by soldering, the emitter region of another direct copper substrate is combined with the leg part of the second power terminal by soldering; And be combined with respectively the leg of the 3rd power terminal and the 4th power terminal by soldering at the collector electrode of two direct copper substrates, and the circuit of two direct copper substrates is connected; Four described power terminals are distributed in the marginal position in two direct copper substrate circuit regions.
Module adopts the soldering processes the most frequently used, cost is minimum, and 4 power terminals are connected with direct copper substrate (DBC) by soldering, and are reasonably distributed in the position, edge of direct copper substrate (DBC) upper surface; Two power terminal structures at diagonal angle are identical, and two power terminal structures that intermediate mirror picture distributes are also identical.
Advantage of the present invention is: thermal diffusivity is good, produce and the cost of material is low.
Accompanying drawing explanation
Fig. 1 is internal structure schematic diagram of the present invention.
Fig. 2 is external structure schematic diagram of the present invention.
Fig. 3 is substrate of the present invention and DBC size schematic diagram.
Fig. 4 is circuit theory diagrams of the present invention.
Embodiment:
Below in conjunction with drawings and Examples, the invention will be further described.Shown in Fig. 1-2, a kind of small-power insulated gate bipolar transistor full-bridge module of the present invention, it mainly comprises substrate 1, direct copper substrate 4, 5, insulated gate bipolar transistor chip 2, diode chip for backlight unit 3, power terminal 6, 7, signal terminal 8, shell 9 and snap ring 10, described substrate 1 and direct copper substrate are by soldering combination, insulated gate bipolar transistor chip 2, between diode chip for backlight unit 3 and direct copper substrate by soldering combination, power terminal 6, 7 and direct copper substrate also by soldering combination, described substrate 1 adopts copper base and as radiating bottom plate, described copper base is combined fixing with shell 9 by snap ring 10 and fluid sealant.
Described copper base is distributed with the different direct copper substrate of two block structures 4,5, and two direct copper substrates 4,5 are yi word pattern arrangement and symmetrical with its center line at copper base length direction; Between two direct copper substrates 4,5, leave the wide raceway groove of 0.8-1.2mm; What heat-radiating substrate of the present invention adopted is the substrate of copper material, significantly strengthens the heat dispersion of module, and the joint temperature of chip is than adopting direct copper substrate (DBC) to reduce more than 30% as the module of radiating bottom plate.
Shown in Fig. 3, described copper base is selected the size of long 90mm × wide 43mm, the area of maximized saving substrate under the prerequisite of assurance circuit layout, thus save the cost of material; The ceramic edge of the edge of copper base and described direct copper substrate retains the distance of one-sided 4mm on Width, retains in the longitudinal direction the distance of one-sided 13.2mm.
On direct copper substrate 4,5 of the present invention, be connected with four power terminals 6,7, the leg part that is wherein combined with the first power terminal 61 in the collector region of a direct bonded copper base 4 by soldering, the emitter region of another direct copper substrate 5 is combined with the leg part of the second power terminal 62 by soldering; And be combined with respectively the leg of the 3rd power terminal 71 and the 4th power terminal 72 by soldering at the collector electrode of two direct copper substrates, and the circuit of two direct copper substrates 4,5 is connected; Described four power terminals 61,62,71,72 are distributed in the marginal position of two direct copper substrate 4,5 circuit regions.
Embodiment: as shown in the figure, the present invention includes substrate 1, insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3, direct copper substrate (DBC) 4, direct copper substrate (DBC) 5, power terminal 6, power terminal 7, signal terminal 8, shell 9 and snap ring 10.Between insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3 and direct copper substrate (DBC) 4, direct copper substrate (DBC) 5 by soldering combination.Substrate 1 and direct copper substrate (DBC) 4, direct copper substrate (DBC) 5 are by soldering combination.
On substrate 1, soldering has between two the direct copper substrates (DBC) 4 of evenly arranging at substrate length direction yi word pattern, 5, two direct copper substrates of direct copper substrate (DBC) (DBC) 4 and direct copper substrates (DBC) 5 and leaves the wide raceway groove of 1.0mm.
In described two direct copper substrates (DBC) 4, direct copper substrate (DBC) 5, be combined by soldering with the leg part of one of them power terminal 6 in the collector region of direct copper substrate (DBC) 4, the emitter region of direct copper substrate (DBC) 5 is combined by soldering with the leg part of another power terminal 6.The leg of two power terminals 7 is combined by soldering, and the circuit of two direct copper substrates (DBC) is connected with the emitter of direct copper substrate (DBC) 4, the collector electrode of direct copper substrate (DBC) 5 respectively.4 power terminals are distributed in the marginal position of two direct copper substrates (DBC) circuit region, have farthest optimized the layout of module.As shown in Figure 1.
What substrate 1 adopted is the heat-radiating substrate of red copper material.The thermal capacitance of red copper material is large, good heat dissipation, significantly strengthens the heat dispersion of module.With adopt direct copper substrate (DBC) as compared with the module of radiating bottom plate, adopt the module chip joint temperature drop of red copper heat-radiating substrate low more than 30%, in use guaranteed the overcurrent capability that module is higher.Substrate 1 is selected the size of long 90mm × wide 43mm, the area of maximized saving substrate under the prerequisite of assurance circuit layout, thus save the cost of material.The ceramic edge of the edge of substrate 1 and direct copper substrate (DBC) retains the distance of one-sided 4mm at Width, retain the distance of one-sided 13.2mm at length direction, coordinates after shell, and overall space is compact and reasonable very, as shown in Figure 3.
Inside modules structure chart as shown in Figure 1, has realized the circuit shown in Fig. 4.In Fig. 4 circuit theory diagrams, can be divided into brachium pontis 1, brachium pontis 2, brachium pontis 3, brachium pontis 4, wherein 11,7,5, the 9 gate pole control terminals that are respectively brachium pontis 1, brachium pontis 2, brachium pontis 3, brachium pontis 4,12,8,6, the 10 emitter control terminals that are respectively brachium pontis 1, brachium pontis 2, brachium pontis 3, brachium pontis 4,1,2 is bus input terminal, and 3,4 is ac output end.
Claims (4)
1. a small-power insulated gate bipolar transistor full-bridge module, it mainly comprises substrate, direct copper substrate, insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal, shell and snap ring, described substrate and direct copper substrate are by soldering combination, insulated gate bipolar transistor chip, between diode chip for backlight unit and direct copper substrate by soldering combination, power terminal and direct copper substrate are also by soldering combination, it is characterized in that described substrate adopts copper base and as radiating bottom plate, described copper base is combined fixing with shell by snap ring and fluid sealant.
2. small-power insulated gate bipolar transistor full-bridge module according to claim 1, it is characterized in that copper base is distributed with the different direct copper substrate of two block structures, and two direct copper substrates are yi word pattern arrangement and symmetrical with its center line at copper base length direction; Between two direct copper substrates, leave the wide raceway groove of 0.8-1.2mm.
3. small-power insulated gate bipolar transistor full-bridge module according to claim 2, is characterized in that institute copper base selects the size of long 90mm × wide 43mm; The ceramic edge of the edge of copper base and described direct copper substrate retains the distance of one-sided 4mm on Width, retains in the longitudinal direction the distance of one-sided 13.2mm.
4. according to the small-power insulated gate bipolar transistor full-bridge module described in claim 1 or 2 goods 3, it is characterized in that being connected with four power terminals on described direct copper substrate 4,5, the leg part that is wherein combined with the first power terminal 6 in the collector region of a direct bonded copper base 4 by soldering, the emitter region of another direct copper substrate 5 is combined with the leg part of the second power terminal 6 by soldering; And be combined with respectively the leg of the 3rd power terminal and the 4th power terminal by soldering at the collector electrode of two direct copper substrates, and the circuit of two direct copper substrates is connected; Four described power terminals are distributed in the marginal position in two direct copper substrate circuit regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033919.0A CN103779293B (en) | 2014-01-24 | 2014-01-24 | A kind of small-power insulated gate bipolar transistor full-bridge modules |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033919.0A CN103779293B (en) | 2014-01-24 | 2014-01-24 | A kind of small-power insulated gate bipolar transistor full-bridge modules |
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| Publication Number | Publication Date |
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| CN103779293A true CN103779293A (en) | 2014-05-07 |
| CN103779293B CN103779293B (en) | 2016-08-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117464113A (en) * | 2023-12-27 | 2024-01-30 | 淄博美林电子有限公司 | Terminal welding method of IGBT module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101304010A (en) * | 2008-06-20 | 2008-11-12 | 南京银茂微电子制造有限公司 | Thin type power module |
| CN101630676A (en) * | 2009-04-02 | 2010-01-20 | 嘉兴斯达微电子有限公司 | Novel isolated gate bipolar transistor module distributed with direct bonded copper base plates |
| CN102097416A (en) * | 2010-11-04 | 2011-06-15 | 嘉兴斯达微电子有限公司 | High-power module with novel packaging structure |
| CN202434507U (en) * | 2011-12-28 | 2012-09-12 | 嘉兴斯达微电子有限公司 | High-reliability high-power insulated gate bipolar transistor module |
| CN203746829U (en) * | 2014-01-24 | 2014-07-30 | 嘉兴斯达微电子有限公司 | Low-power insulated-gate bipolar transistor full-bridge module |
-
2014
- 2014-01-24 CN CN201410033919.0A patent/CN103779293B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101304010A (en) * | 2008-06-20 | 2008-11-12 | 南京银茂微电子制造有限公司 | Thin type power module |
| CN101630676A (en) * | 2009-04-02 | 2010-01-20 | 嘉兴斯达微电子有限公司 | Novel isolated gate bipolar transistor module distributed with direct bonded copper base plates |
| CN102097416A (en) * | 2010-11-04 | 2011-06-15 | 嘉兴斯达微电子有限公司 | High-power module with novel packaging structure |
| CN202434507U (en) * | 2011-12-28 | 2012-09-12 | 嘉兴斯达微电子有限公司 | High-reliability high-power insulated gate bipolar transistor module |
| CN203746829U (en) * | 2014-01-24 | 2014-07-30 | 嘉兴斯达微电子有限公司 | Low-power insulated-gate bipolar transistor full-bridge module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117464113A (en) * | 2023-12-27 | 2024-01-30 | 淄博美林电子有限公司 | Terminal welding method of IGBT module |
| CN117464113B (en) * | 2023-12-27 | 2024-04-02 | 淄博美林电子有限公司 | Terminal welding method of IGBT module |
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| Publication number | Publication date |
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| CN103779293B (en) | 2016-08-24 |
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Effective date of registration: 20171213 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR Ltd. Address before: Jiaxing City, Zhejiang province 314006 Ring Road No. 18 Sidalu Patentee before: JIAXING STARPOWER MICROELECTRONICS Co.,Ltd. |
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Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |