CN203746852U - Flat-type power semiconductor module - Google Patents
Flat-type power semiconductor module Download PDFInfo
- Publication number
- CN203746852U CN203746852U CN201420044784.3U CN201420044784U CN203746852U CN 203746852 U CN203746852 U CN 203746852U CN 201420044784 U CN201420044784 U CN 201420044784U CN 203746852 U CN203746852 U CN 203746852U
- Authority
- CN
- China
- Prior art keywords
- power terminal
- boss
- semiconductor module
- isolation
- sole plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims description 9
- 239000004568 cement Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
- 239000003292 glue Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
A flat-type power semiconductor module comprises a shell main body which arranges an input side power terminal and an output side power terminal on two symmetrical outer sides respectively. A signal terminal is arranged on a shell main body side which is vertical to distribution sides of the two power terminals. Bottoms of each input side power terminal and each output side power terminal are provided with support bosses. A throughout groove structure is arranged between the adjacent bosses so as to carry out isolation. A back side of each boss is a hanging structure. The shell main body is formed through connecting the shell and a heat conduction base plate. A conductive heating component is arranged on the heat conduction base plate. The conductive heating component is mechanically isolated from a temperature detection device arranged on the side, and insulation glue is filled in an internal portion and then electrical isolation is achieved. An internal portion of the heat conduction base plate is provided with a ring groove structure and a column array is arranged downwardly so that a column heat dissipation structure is formed. The module has the characteristics that the size is small; power is large; a parasitic parameter is small; heat dissipation efficiency is high; an internal integration level is high and so on.
Description
Technical field
The utility model relates to a kind of flat power semiconductor module, be mainly used in frequency converter, servo, industrial power, electric motor car, especially to heat radiation, parasitic parameter, module volume requirement higher technical field all.
Background technology
In current power industry, frequency converter, servo, industrial power, electric motor car are all being widely used power model, mainly in the majority with two generic modules, and a kind of is high power single-tube, half-bridge, its inner circuit structure is fairly simple, must use a plurality of modules just can be combined into the circuit topology needing; Another is small-power integration module, this kind of inside modules is integrated whole circuit topology, but power grade is often less, can only meet the demand of some minicomputers.
In order to realize powerful application, use a plurality of modules to form corresponding circuit structure, but some problems have also been brought accordingly, first, owing to being a plurality of module built-up circuits, its volume is often larger, needs the radiator that volume is larger, integrates the volume, the weight that have directly strengthened machine; Secondly, this high-power scheme inside often has module in parallel, during use, need to carry out derate to module, cannot bring into play the maximum performance of module; Also have, the circuit between a plurality of modules connects more complicated, and the introducing of various lines has brought a large amount of parasitic parameters, and need to introduce more external devices could these parameters of balance.
Present power model generally all adopts air-cooled technology heat radiation, and cost compare is low, but the heat transfer efficiency of this kind of radiating mode is relatively low, cannot be suitable for, such as electric automobile in some special occasions.
Utility model content
The purpose of this utility model is to overcome the deficiency that prior art exists, and the flat power semiconductor that a kind of volume is little, power is large, parasitic parameter is little, radiating efficiency is high, inner integrated level is high module is provided.
The purpose of this utility model completes by following technical solution, described flat power semiconductor module, it comprises that an outside in two symmetries is furnished with respectively the housing main body of input side power terminal and outlet side power terminal, dividing on the housing main body limit that selvedge is vertical and be furnished with signal terminal with two power terminals, the bottom of each input side power terminal and outlet side power terminal is provided with the boss of support, between adjacent lands, be provided with and run through the isolation of groove structure, the back side of boss is hanging structure; Described housing main body is formed by connecting by housing and conductive sole plate, above described conductive sole plate, is provided with conductive heating unit, and described conductive heating unit and the limit temperature-detecting device mechanical isolation of putting, and electricity isolation after insulating cement is filled in inside; Described conductive sole plate inside is provided with circular groove structure, and to being arranged with cylindrical-array, and form cylinder radiator structure.
Described cylindrical-array region covers the heating region of conductive sole plate completely; Described power terminal is made by high conductivity material, and bringing-out center is provided with borehole structure, and inner link is bonding structure or can Welding Structure, between bringing-out and inner link, has plural bending structure.
The boss that the bottom of described power terminal is provided with support power terminal and size is greater than power terminal in three directions protruding module, boss inside is hollow structure, and is built-in with securing member; Described cylindrical-array bottom faces evenness is controlled in 0.1mm.
Described boss front edge is provided with groove, and the spacing between two boss is not less than 5mm.
Described signal terminal is made by high conductivity material, and bringing-out is Welding Structure or bayonet arrangement, and inner link is bonding structure or can Welding Structure.
Described temperature-detecting device and bottom heat radiation body are used the isolation of high thermal conductivity insulating material, use insulating cement isolation with inner conductive heating semiconductor element; Described housing is comprised of upper shell and lower house, and described lower house and conductive sole plate closely cooperate by metal clasp, and snap ring center, Facad structure are installed for securing member; Described conductive sole plate is provided with annular groove, and inside grooves region is greater than cylinder heat sinking array.
The utility model has the advantages that: volume is little, power is large, three phase bridge circuit is topological, all circuit topologies are encapsulated in same module, and each power cell is used the mode of multi-chip parallel connection to realize high power; All input terminals in module one side, the convenient bus bar of settling, also can make external filter capacitor more approach chip simultaneously, optimizes input waveform; Input terminal, lead-out terminal, model terminal, on the four direction of module, reduce phase mutual interference; The temperature-detecting device of the built-in isolation of module, directly monitoring module internal temperature improves coefficient of safety simultaneously; Module bottom is cylindrical-array, and fluid,matching cold heat sink improves module heat dissipating efficiency.
Accompanying drawing explanation
Fig. 1 is the plane structure chart that the utility model has been removed upper shell.
Fig. 2 is polycrystalline substance schematic diagram of the present utility model.
Fig. 3 is side structure schematic diagram of the present utility model.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.Shown in Fig. 1-3, a kind of flat power semiconductor module described in the utility model, it comprises that an outside in two symmetries is furnished with respectively the housing main body of input side power terminal 1 and outlet side power terminal 2, on the housing main body limit vertical with 1,2 minutes selvedges of two power terminals, be furnished with signal terminal 3, the bottom of each input side power terminal 1 and outlet side power terminal 2 is provided with the boss 9 of support, between adjacent lands 9, be provided with and run through groove 8 structure isolation, the back side of boss 9 is hanging structure; Described housing main body is formed by connecting by housing and conductive sole plate 15, and described conductive sole plate 15 is provided with conductive heating unit 7 above, and described conductive heating unit 7 and limit temperature-detecting device 6 mechanical isolation of putting, and electricity isolation after insulating cement is filled in inside; Described conductive sole plate 15 inside are provided with circular groove structure 11, and to being arranged with cylindrical-array 10, and form cylinder radiator structure.
Cylindrical-array described in the utility model 10 regions cover the heating region of conductive sole plate 15 completely; Described power terminal 1,2 use high conductivity material are made, and bringing-out center is provided with borehole structure, and inner link is bonding structure or can Welding Structure, between bringing-out and inner link, has plural bending structure.
The boss 9 that the bottom of described power terminal 1,2 is provided with support power terminal and size is greater than power terminal 1,2 in three directions protruding module, boss 9 inside are hollow structure, and are built-in with securing member; Described cylindrical-array 10 bottom faces evenness are controlled in 0.1mm; Described boss 9 front edge are provided with groove, and the spacing that two boss are 9 is not less than 5mm.
Described signal terminal 3 use high conductivity material are made, and bringing-out is Welding Structure or bayonet arrangement, and inner link is bonding structure or can Welding Structure.
Described temperature-detecting device 6 is used the isolation of high thermal conductivity insulating material with bottom heat radiation body, uses insulating cement isolation with inner conductive heating semiconductor element; Described housing is comprised of upper shell and lower house 14, and described lower house 14 closely cooperates by metal clasp 4 with conductive sole plate 15, and snap ring center, Facad structure are installed for securing member; Described conductive sole plate 15 is provided with annular groove, and inside grooves region is greater than cylinder heat sinking array.
Embodiment: the utility model is that input side power terminal 1, outlet side power terminal 2, signal terminal 3 are arranged on different limits separately, and limit, power terminal place is vertical with limit, signal terminal place; Each input side power terminal 1, outlet side power terminal 2 bottoms have boss 9 to support, and have the groove of running through 8 isolation between each boss 9, the fluted structure 5 of boss 9 front edge, and boss 9 back sides are hanging structure 12; Snap ring 4 is for fixing lower house 14 and conductive sole plate 15; Temperature-detecting device 6 and inner conductive heater 7 mechanical isolation, and electricity isolation after inside modules is filled insulating cement; There is circular groove structure 11 conductive sole plate 15 inside, and have cylindrical-array 10, and cylindrical-array base plane 13 evenness require in 0.1mm.
Claims (6)
1. a flat power semiconductor module, it comprises that an outside in two symmetries is furnished with respectively the housing main body of input side power terminal and outlet side power terminal, dividing on the housing main body limit that selvedge is vertical and be furnished with signal terminal with two power terminals, the bottom of each input side power terminal and outlet side power terminal is provided with the boss of support, between adjacent lands, be provided with and run through the isolation of groove structure, the back side of boss is hanging structure; Described housing main body is formed by connecting by housing and conductive sole plate, above described conductive sole plate, is provided with conductive heating unit, and described conductive heating unit and the limit temperature-detecting device mechanical isolation of putting, and electricity isolation after insulating cement is filled in inside; Described conductive sole plate inside is provided with circular groove structure, and to being arranged with cylindrical-array, and form cylinder radiator structure.
2. flat power semiconductor module according to claim 1, is characterized in that described cylindrical-array 10 regions cover the heating region of conductive sole plate completely; Described power terminal is made by high conductivity material, and bringing-out center is provided with borehole structure, and inner link is bonding structure or can Welding Structure, between bringing-out and inner link, has plural bending structure.
3. flat power semiconductor module according to claim 1 and 2, the boss that bottom is provided with support power terminal and size is greater than power terminal in three directions protruding module that it is characterized in that described power terminal, boss inside is hollow structure, and is built-in with securing member; Described cylindrical-array bottom faces evenness is controlled in 0.1mm.
4. flat power semiconductor module according to claim 3, is characterized in that described boss front edge is provided with groove, and the spacing between two boss is not less than 5mm.
5. flat power semiconductor module according to claim 1, is characterized in that described signal terminal makes by high conductivity material, and bringing-out is Welding Structure or bayonet arrangement, and inner link is bonding structure or can Welding Structure.
6. flat power semiconductor module according to claim 1, is characterized in that described temperature-detecting device and bottom heat radiation body are used the isolation of high thermal conductivity insulating material, uses insulating cement isolation with inner conductive heating semiconductor element; Described housing is comprised of upper shell and lower house, and described lower house and conductive sole plate closely cooperate by metal clasp, and snap ring center, Facad structure are installed for securing member; Described conductive sole plate is provided with annular groove, and inside grooves region is greater than cylinder heat sinking array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044784.3U CN203746852U (en) | 2014-01-24 | 2014-01-24 | Flat-type power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044784.3U CN203746852U (en) | 2014-01-24 | 2014-01-24 | Flat-type power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203746852U true CN203746852U (en) | 2014-07-30 |
Family
ID=51346615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420044784.3U Expired - Lifetime CN203746852U (en) | 2014-01-24 | 2014-01-24 | Flat-type power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203746852U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779348A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Flat-plate type power semiconductor module |
-
2014
- 2014-01-24 CN CN201420044784.3U patent/CN203746852U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779348A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Flat-plate type power semiconductor module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171222 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR Ltd. Address before: Jiaxing City, Zhejiang province 314006 Ring Road No. 18 Sidalu Patentee before: JIAXING STARPOWER MICROELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140730 |
|
| CX01 | Expiry of patent term |