CN203607394U - Power integrated module - Google Patents
Power integrated module Download PDFInfo
- Publication number
- CN203607394U CN203607394U CN201320812838.1U CN201320812838U CN203607394U CN 203607394 U CN203607394 U CN 203607394U CN 201320812838 U CN201320812838 U CN 201320812838U CN 203607394 U CN203607394 U CN 203607394U
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- chip
- copper
- aluminum
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- shell
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- Withdrawn - After Issue
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a power integrated module. An integrated circuit chip and a device are bonded to a copper-coated aluminum plate via aluminum wires, each semiconductor unit module comprises a copper substrate, a semiconductor chip and a rapid-recovery diode chip, the copper substrate is fixed on the copper-coated aluminum plate, the collector of the semiconductor chip and the cathode of the rapid-recovery diode chip are connected with the copper substrate, the emitter and grid of the semiconductor chip and the anode of the rapid-recovery diode chip are connected with the copper-coated aluminum plate via aluminum wires, electrode terminals and signal terminals are embedded into the sidewall of a housing, the lower portions of the electrode and signal terminals are connected with the copper-coated aluminum plate via aluminum wires, silica gel is filled into the housing to seal the integrated circuit chip, the device and the semiconductor unit modules, and a cover plate is connected to the housing. According to the utility model, the semiconductor chip, the rapid-recovery diode chips and the integrated circuit chip are packaged by the copper-coated aluminum plate in a mixed manner, the total dimension of the power integrated module is reduced, the heat radiation effect is improved, and the manufacture cost can be reduced.
Description
Technical field
The utility model relates to a kind of power integration module, belongs to power model manufacturing technology field.
Background technology
High-power semiconductor module is a kind of standard profile size and non-standard overall dimension module product.Power integration module is mainly used in direct current (DC) and becomes the inversion conversion that exchanges (AC), for carrying out variable frequency control to industry and civil air conditioner, improves power consumption efficiency, reduces energy consumption.Traditional intelligence power semiconductor modular mainly comprises shell, main circuit board and drive circuit board, semiconductor chip, multiple electrode terminals and signal terminal are welded on and cover cermet substrate and form main circuit board, and the printed circuit board (PCB) that is welded with integrated circuit (IC) chip and each device forms drive circuit board, for reducing the volume of power model, by on screw mounting casing by drive circuit board, each terminal need pass the terminal hole on terminal hole and the drive circuit board on cover plate of outer casing, again by scolder by terminal soldering on drive circuit board, realize and being connected and driving the input and output of signal of power semiconductor modular external circuit by terminal, but said structure is that semiconductor chip is welded on and covers cermet substrate, integrated circuit (IC) chip and each device are to be welded on printed circuit board (PCB), cannot further reduce on the one hand the volume of power integration module, also cannot dispel the heat to integrated circuit (IC) chip on the other hand.
Summary of the invention
The purpose of this utility model is to provide one can, by semiconductor chip, fast recovery diode chip and integrated circuit (IC) chip hybrid package at aluminum-based copper-clad plate, dwindle overall dimensions, improves radiating effect, and can reduce the power integration module of cost of manufacture.
The utility model is that the technical scheme achieving the above object is: a kind of power integration module, it is characterized in that: comprise shell, be fixed on aluminum-based copper-clad plate, plurality of electrodes terminal, a plurality of signal terminal, integrated circuit (IC) chip and the device of outer casing bottom and more than three groups semiconductor unit modules, integrated circuit (IC) chip and device are respectively by aluminium wire and aluminum-based copper-clad plate bonding, described semiconductor unit module comprises copper base, semiconductor chip and fast recovery diode chip, copper base is fixed on aluminum-based copper-clad plate, the collector electrode of semiconductor chip is connected with copper base with the negative electrode of fast recovery diode chip, the anode of the emitter of semiconductor chip and grid and fast recovery diode chip is connected with aluminum-based copper-clad plate by aluminium wire, each electrode terminal and each signal terminal are rabbeted respectively on the sidewall of shell, the bottom of each electrode terminal and each signal terminal is connected with aluminum-based copper-clad plate by aluminium wire, in shell, be filled with silicon gel and by integrated circuit (IC) chip, device and semiconductor unit module sealing, cover plate is connected on shell.
The utility model is connected semiconductor chip and fast recovery diode chip with copper base, replace conventional semiconductors chip and fast recovery diode chip to be first welded in and cover cermet substrate, to cover cermet substrate is welded on copper base again, cover ceramet group owing to saving, the heat of semiconductor chip directly reaches aluminum-based copper-clad plate by copper base, improve the heat-sinking capability of semiconductor chip, also improved semiconductor chip working temperature and service efficiency simultaneously.The utility model semiconductor chip and fast recovery diode chip are connected with aluminum-based copper-clad plate by copper base, also integrated circuit (IC) chip is connected on aluminum-based copper-clad plate simultaneously, having realized nude film and be semiconductor chip and fast recovery diode chip and single tube is the hybrid package of integrated circuit (IC) chip, can further dwindle the size of power integration module, also can make device and integrated circuit (IC) chip dispel the heat by the radiator of aluminum-based copper-clad plate bottom simultaneously, make device and integrated circuit (IC) chip there is a good operational environment, the utility model is improved and circuit is designed by the heat radiation to semiconductor chip, can improve the useful life of frequency converter.Together with the utility model is realized ultrasonic bonding by aluminium wire with aluminum-based copper-clad plate by the grid of each semiconductor chip, then aluminum-based copper-clad plate carries out ultrasonic bonding by aluminium wire and each electrode terminal and the signal terminal of interlocking on shell again, signal, device signal are drawn by signal terminal, and the negative electrode of the collector and emitter of semiconductor chip and recovery diode chip and anode are all drawn by electrode terminal, because electrode terminal and signal terminal are arranged on shell, being connected of convenient and external circuit.The utility model is owing to opening wide in the middle of shell, facilitate silicon gel pour into and silicon gel in the eliminating of bubble, there is good manufacturability.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Fig. 1 is the structural representation of power integration module of the present utility model.
Fig. 2 is the structural representation of power integration module of the present utility model while opening cover plate.
Fig. 3 is the structural representation of the utility model aluminum-based copper-clad plate.
Fig. 4 is that the utility model electrode terminal and signal terminal are fixed on the structural representation on housing.
Fig. 5 is the structural representation of the utility model electrode terminal.
Wherein: 1-cover plate, 2-signal terminal, 3-shell, 4-electrode terminal, 5-lining, 6-negative temperature thermistor, 7-aluminium wire, 8-Chip-R, 9-patch capacitor, 10-integrated circuit (IC) chip, 11-copper base, 11-1-aluminium lamination, 11-2-insulating barrier, 11-3-copper layer, 11-4-gold-plated part, 11-5-insulated part, 12-semiconductor chip, 13-fast recovery diode chip, 14-aluminum-based copper-clad plate.
Embodiment
See shown in Fig. 1～2, power integration module of the present utility model, comprise shell 3, being fixed on aluminum-based copper-clad plate 14, plurality of electrodes terminal 4, a plurality of signal terminal 2, integrated circuit (IC) chip 10 and the device of shell 3 bottoms and more than three groups semiconductor unit modules, is to be connected with lining 5 by adhesive between shell 3 and copper base 11.See Fig. 2, shown in 3, aluminum-based copper-clad plate 14 of the present utility model comprises the aluminium lamination 11-1 of the bottom being connected successively, the insulating barrier 11-2 at middle part and the copper layer 11-3 on top, and copper layer 11-3 top is also provided with the gold-plated part 11-4 in many places for welding and is arranged on each gold-plated part 11-4 periphery, and for the insulated part 11-5 of welding resistance, need the place of soldering and ultrasonic bonding to there is gold-plated part at copper layer, make gold-plated part can with Chip-R 8, patch capacitor 9, integrated circuit (IC) chip 10, copper base 11 carries out soldering, also can carry out the ultrasonic bonding of aluminium wire 7 simultaneously, and insulated part can adopt painting insulating varnish, in the time of soldering, play welding resistance effect.
See shown in Fig. 2,3, the utility model integrated circuit (IC) chip 10 and device are respectively by aluminium wire 7 and aluminum-based copper-clad plate 14 bondings, this device as shown in Figure 2, comprise at least one negative temperature thermistor 6, at least three Chip-Rs 8 and at least three patch capacitors 9, each negative temperature thermistor 6, Chip-R 8 and patch capacitor 9 are connected with aluminum-based copper-clad plate 14 by aluminium wire 7 respectively, by the temperature of negative temperature thermistor 6 detection power modules, and Chip-R 8 and patch capacitor 9 and semiconductor chip 12 and fast recovery diode chip 13 forming circuits.
See Fig. 2, shown in 3, semiconductor unit module of the present utility model can adopt 6 groups, each semiconductor unit module comprises copper base 11, semiconductor chip 12 and fast recovery diode chip 13, semiconductor chip 12 can adopt insulated gate bipolar transistor, or IGBT or thyristor etc., copper base 11 is fixed on aluminum-based copper-clad plate 14, the negative electrode of the collector electrode of semiconductor chip 12 and fast recovery diode chip 13 is connected with copper base 11, the cathode weld of the collector electrode of semiconductor chip 12 and fast recovery diode chip 13 is on copper base 11, the anode of the emitter of semiconductor chip 12 and grid and fast recovery diode chip 13 is connected with aluminum-based copper-clad plate 14 by aluminium wire 7, can carry out ultrasonic bonding by aluminium wire 7, cover copper ceramic substrate owing to saving, improve the heat-sinking capability of chip, improve chip operation temperature and service efficiency.
See Fig. 4, shown in 5, the each electrode terminal 4 of the utility model and each signal terminal 2 are rabbeted respectively on the sidewall of shell 3, electrode terminal 4 of the present utility model is identical with signal terminal 2 structures, electrode terminal 4 and signal terminal 2 are L-shaped, because electrode terminal 4 and signal terminal 2 are rabbeted on shell 3, can improve electrode terminal 4 and 2 useful lifes of signal terminal, can simplify shell 3 structures, reduce shell 3 costs, and then the cost of reduction power integration module, the bottom of each electrode terminal 4 and each signal terminal 2 is connected with aluminum-based copper-clad plate 14 by aluminium wire 7, in shell 3, be filled with silicon gel and by integrated circuit (IC) chip 10, device and semiconductor unit module sealing, cover plate 1 is connected on shell 3, cover plate 1 is by adhesive fixed housing 3, realize the sealing of power integration module.
See shown in Fig. 2,4, the utility model is respectively equipped with projection on two sidewalls of shell 3, and this projection is rectangle, and passes to the interval when realizing power integration module and being connected with external circuit.
Claims (5)
1. a power integration module, it is characterized in that: comprise shell (3), be fixed on aluminum-based copper-clad plate (14), plurality of electrodes terminal (4), a plurality of signal terminal (2), integrated circuit (IC) chip (10) and device and the more than three groups semiconductor unit modules of shell (3) bottom, integrated circuit (IC) chip (10) and device are respectively by aluminium wire (7) and aluminum-based copper-clad plate (14) bonding, described semiconductor unit module comprises copper base (11), semiconductor chip (12) and fast recovery diode chip (13), copper base (11) is fixed on aluminum-based copper-clad plate (14), the negative electrode of the collector electrode of semiconductor chip (12) and fast recovery diode chip chip (13) is connected with copper base (11), the anode of the emitter of semiconductor chip (12) and grid and fast recovery diode chip (13) is connected with aluminum-based copper-clad plate (14) by aluminium wire (7), each electrode terminal (4) and each signal terminal (2) are rabbeted respectively on the sidewall of shell (3), the bottom of each electrode terminal (4) and each signal terminal (2) is connected with aluminum-based copper-clad plate (14) by aluminium wire (7), in shell (3), be filled with silicon gel and by integrated circuit (IC) chip (10), device and semiconductor unit module sealing, cover plate (1) is connected on shell (3).
2. power integration module according to claim 1, it is characterized in that: described aluminum-based copper-clad plate (14) comprises aluminium lamination (11-1), the insulating barrier (11-2) at middle part and the copper layer (11-3) on top of the bottom that is connected successively, and copper layer (11-3) top is also provided with the gold-plated parts in many places (11-4) for welding and is arranged on each gold-plated part (11-4) periphery and the insulated part (11-5) for welding resistance.
3. power integration module according to claim 1, it is characterized in that: described device comprises at least one negative temperature thermistor (6), at least three Chip-Rs (8) and at least three patch capacitors (9), each negative temperature thermistor (6), Chip-R (8) and patch capacitor (9) are connected with aluminum-based copper-clad plate (14) by aluminium wire (7) respectively.
4. power integration module according to claim 1, is characterized in that: described electrode terminal (4) is identical with signal terminal (2) structure, and electrode terminal (4) and signal terminal (2) are L-shaped.
5. power integration module according to claim 1, is characterized in that: on two sidewalls of described shell (3), be respectively equipped with projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320812838.1U CN203607394U (en) | 2013-12-10 | 2013-12-10 | Power integrated module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320812838.1U CN203607394U (en) | 2013-12-10 | 2013-12-10 | Power integrated module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203607394U true CN203607394U (en) | 2014-05-21 |
Family
ID=50720058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320812838.1U Withdrawn - After Issue CN203607394U (en) | 2013-12-10 | 2013-12-10 | Power integrated module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203607394U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701268A (en) * | 2013-12-10 | 2015-06-10 | 江苏宏微科技股份有限公司 | Smart power module |
| CN106252332A (en) * | 2015-06-04 | 2016-12-21 | 富士电机株式会社 | Critesistor loading device and thermosensitive resistor parts |
| CN107946272A (en) * | 2017-11-20 | 2018-04-20 | 中航（重庆）微电子有限公司 | A kind of power MOSFET inverter modules of high integration |
| CN112467957A (en) * | 2020-10-10 | 2021-03-09 | 山东斯力微电子有限公司 | Intelligent high-power IGBT module |
-
2013
- 2013-12-10 CN CN201320812838.1U patent/CN203607394U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701268A (en) * | 2013-12-10 | 2015-06-10 | 江苏宏微科技股份有限公司 | Smart power module |
| CN104701268B (en) * | 2013-12-10 | 2017-06-16 | 江苏宏微科技股份有限公司 | Spm |
| CN106252332A (en) * | 2015-06-04 | 2016-12-21 | 富士电机株式会社 | Critesistor loading device and thermosensitive resistor parts |
| CN107946272A (en) * | 2017-11-20 | 2018-04-20 | 中航（重庆）微电子有限公司 | A kind of power MOSFET inverter modules of high integration |
| CN112467957A (en) * | 2020-10-10 | 2021-03-09 | 山东斯力微电子有限公司 | Intelligent high-power IGBT module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140521 Effective date of abandoning: 20170616 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20140521 Effective date of abandoning: 20170616 |