CN201845771U - High-power module with novel encapsulating structure - Google Patents
High-power module with novel encapsulating structure Download PDFInfo
- Publication number
- CN201845771U CN201845771U CN 201020589857 CN201020589857U CN201845771U CN 201845771 U CN201845771 U CN 201845771U CN 201020589857 CN201020589857 CN 201020589857 CN 201020589857 U CN201020589857 U CN 201020589857U CN 201845771 U CN201845771 U CN 201845771U
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- CN
- China
- Prior art keywords
- direct copper
- substrate
- copper substrate
- terminal
- power
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The utility model discloses a high-power module with a novel encapsulating structure, which comprises a baseplate, a direct-copper-cladded baseplate (DBC), an insulated gate bipolar transistor (IGBT) chip, a diode chip, a power terminal, a signal terminal and a housing. A pre-bending structure is arranged at the head part of the power terminal; the power terminal of the pre-bending structure is combined with the direct-copper-cladded baseplate through ultrasonic soldering; a welding leg is arranged on the signal terminal and is combined with the direct-copper-cladded baseplate through ultrasonic soldering; and a clasp and a nut base, which are matched with each other, are arranged on the housing. The high-power module with the novel encapsulating structure has the characteristics of high reliability and simple manufacturing technology.
Description
Technical field
The utility model belongs to semiconductor packages and power model field, specifically a kind of high power module of novel package structure.
Background technology:
The insulated gate bipolar transistor module mainly comprises substrate, direct copper substrate (DBC), insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell.When the overall structure in this module is designed, consider thermal design, structural stress design, EMC design and circuit structure design, this also will consider the production cost of deisgn product simultaneously.The subject matter that exists in the existing insulated gate bipolar transistor modular design is low, the complex manufacturing of reliability of products.
Summary of the invention
The purpose of this utility model is to design a kind of high power module of novel package structure.
The reliability that existing insulated gate bipolar transistor to be solved in the utility model (IGBT) module exists is low, the problem of complex manufacturing.
The technical solution of the utility model is: it comprises substrate, the direct copper substrate, the insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell, substrate and direct copper substrate are by the soldering combination, the insulated gate bipolar transistor chip, between diode chip for backlight unit and the direct copper substrate by the soldering combination, power terminal and direct copper substrate are by the ultra-sonic welded combination, signal terminal and direct copper substrate are equally by the ultra-sonic welded combination, shell and substrate are fixed, the power terminal head structure that pre-bends, the power terminal of this structure that pre-bends combines by ultra-sonic welded with the direct copper substrate, signal terminal is provided with leg, the leg of signal terminal combines by ultra-sonic welded with the direct copper substrate, shell is provided with buckle, nut pedestal, buckle and nut pedestal coupling.
Be distributed with the direct copper substrate of six big power section on the substrate, the direct copper substrate of three little signal sections, six direct copper board structures of power section are identical and be square and arrange, the direct copper board structure of signal section is identical, is located at power section one side and yi word pattern and arranges.
Power section is connected by the bonding aluminum steel with signal section direct copper substrate.The power terminal head pre-bends structure with vertically part is vertical.Outer casing underpart is provided with four nut bore of symmetry, and substrate is provided with screw mounting hole, and nut bore is corresponding with screw mounting hole, is undertaken substrate and shell fastening by screw.
The utility model has the advantages that: reliability height of the present utility model, production technology is easy.
Description of drawings
Fig. 1 is internal structure schematic diagram of the present utility model (removing shell).
Fig. 2 is an external structure schematic diagram of the present utility model.
Fig. 3 is the schematic diagram that signal terminal of the present utility model and power terminal are welded in substrate.
Fig. 4 is the utility model shell and nut pedestal assembling schematic diagram.
Fig. 5 is the utility model shell and substrate substrate assembling schematic diagram.
Fig. 6 is circuit theory diagrams of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
As shown in the figure, the utility model comprises substrate 1, insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3, direct copper substrate (DBC) 4, direct copper substrate (DBC) 5, signal terminal 6, signal terminal 7, signal terminal 8, power terminal 9, power terminal 10, shell 11 and nut pedestal 12.Between insulated gate bipolar transistor (IGBT) chip 2, diode chip for backlight unit 3 and the direct copper substrate (DBC) 4 by the soldering combination.Substrate 1 and direct copper substrate (DBC) 4 and direct copper substrate (DBC) 5 are by the soldering combination.Soldering has six of the big power section direct copper substrates (DBC) 4 of arranging that are square on the substrate 1, separates with the wide raceway groove of 1mm between three direct copper substrates (DBC) 4 of homonymy, separates with the wide raceway groove of 2mm between two groups.Same soldering has three of little signal section to be the direct copper substrate (DBC) 5 that yi word pattern is arranged on the substrate 1, and wherein separates with the wide raceway groove of 2mm between the direct copper substrate (DBC) 4 of a side.
In 4 and three direct copper substrates of described six direct copper substrates (DBC) (DBC) 5, six direct copper substrates (DBC), 4 structures are all identical, and the structure of three direct copper substrates (DBC) 5 is also all identical.Two groups of each three direct copper substrates (DBC) 4 that are distributed in both sides are with substrate center's symmetry.
The collector region of direct copper substrate (DBC) 4 combines by ultrasonic bonding with power terminal 10 legs part, and the emitter region of direct copper substrate (DBC) 4 combines by ultrasonic bonding with power terminal 9 legs part.Three direct copper substrates (DBC) 5 by the bonding aluminum steel respectively with the collector electrode of direct copper substrate (DBC) 4, emitter carries out circuit with gate pole and is connected, signal terminal 6 is provided with leg 6-1, signal terminal 7 is provided with leg 7-1 and signal terminal 8 is provided with leg 8-1, the leg 6-1 of these increases, leg 7-1 and leg 8-1 respectively with three direct copper substrate (DBC) 5 by ultrasonic bonding, the collector electrode that wherein is connected direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 of signal terminal 6 welding, the emitter that is connected direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 of signal terminal 7 welding is connected the gate pole of direct copper substrate (DBC) 4 with the direct copper substrate (DBC) 5 that signal terminal 8 welds.
Before power terminal and direct copper substrate (DBC) welding, the head of power terminal has been the bending structure by the state bending of design, this bending structure is vertical with the vertical plane of power terminal, avoid before the welding after again the way of bending the welding spot reliability between terminal and the direct copper substrate (DBC) is exerted an adverse impact.Signal terminal has then adopted the bottom to increase the mode that leg is direct and direct copper substrate (DBC) welds, go up will the go between again way of complexity of connection signal terminal of first welding lead at direct copper substrate (DBC) before having changed, increase the soldering reliability of this partial circuit, also increased the current class of this partial circuit.As shown in Figure 3.
As Fig. 1 and inside modules structure and terminal welding schematic diagram shown in Figure 3, realized circuit shown in Figure 6.G, C, E are respectively gate pole, collector and emitter in Fig. 6 circuit theory diagrams.
Claims (5)
1. the high power module of a novel package structure, comprise substrate, the direct copper substrate, the insulated gate bipolar transistor chip, diode chip for backlight unit, power terminal, signal terminal and shell, substrate and direct copper substrate are by the soldering combination, the insulated gate bipolar transistor chip, between diode chip for backlight unit and the direct copper substrate by the soldering combination, power terminal and direct copper substrate are by the ultra-sonic welded combination, signal terminal and direct copper substrate are equally by the ultra-sonic welded combination, shell and substrate are fixed, it is characterized in that the power terminal head structure that pre-bends, the power terminal of this structure that pre-bends combines by ultra-sonic welded with the direct copper substrate, signal terminal is provided with leg, the leg of signal terminal combines by ultra-sonic welded with the direct copper substrate, shell is provided with buckle, nut pedestal, buckle and nut pedestal coupling.
2. the high power module of a kind of novel package structure according to claim 1, it is characterized in that being distributed with on the substrate direct copper substrate of six big power section, the direct copper substrate of three little signal sections, six direct copper board structures of power section are identical and be square and arrange, the direct copper board structure of signal section is identical, is located at power section one side and yi word pattern and arranges.
3. the high power module of a kind of novel package structure according to claim 2 is characterized in that power section is connected by the bonding aluminum steel with signal section direct copper substrate.
4. the high power module of a kind of novel package structure according to claim 1 is characterized in that the power terminal head pre-bends structure with vertically part is vertical.
5. the high power module of a kind of novel package structure according to claim 1 is characterized in that outer casing underpart is provided with four nut bore of symmetry, and substrate is provided with screw mounting hole, and nut bore is corresponding with screw mounting hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020589857 CN201845771U (en) | 2010-11-04 | 2010-11-04 | High-power module with novel encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020589857 CN201845771U (en) | 2010-11-04 | 2010-11-04 | High-power module with novel encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201845771U true CN201845771U (en) | 2011-05-25 |
Family
ID=44040653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020589857 Expired - Lifetime CN201845771U (en) | 2010-11-04 | 2010-11-04 | High-power module with novel encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201845771U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097416A (en) * | 2010-11-04 | 2011-06-15 | 嘉兴斯达微电子有限公司 | High-power module with novel packaging structure |
-
2010
- 2010-11-04 CN CN 201020589857 patent/CN201845771U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097416A (en) * | 2010-11-04 | 2011-06-15 | 嘉兴斯达微电子有限公司 | High-power module with novel packaging structure |
| CN102097416B (en) * | 2010-11-04 | 2012-11-14 | 嘉兴斯达微电子有限公司 | High-power module with novel packaging structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160718 Address after: 201800 Shanghai City, Jiading District Hui Yan Road No. 1899 Building 5 floor 1 B zone Patentee after: SHANGHAI DAOZHI TECHNOLOGY CO., LTD. Address before: Sidalu in Nanhu District of Jiaxing city of Zhejiang Province, No. 18 314000 Patentee before: Jiaxing Starpower Microelectronics Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20110525 |
|
| CX01 | Expiry of patent term |