CN102760714B - Electrode structure and apply the IGBT module of this electrode - Google Patents
Electrode structure and apply the IGBT module of this electrode Download PDFInfo
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- CN102760714B CN102760714B CN201210264133.0A CN201210264133A CN102760714B CN 102760714 B CN102760714 B CN 102760714B CN 201210264133 A CN201210264133 A CN 201210264133A CN 102760714 B CN102760714 B CN 102760714B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention discloses a kind of electrode structure, described electrode comprises horizontally disposed weld part and vertically with described weld part arranges lead division, described electrode also comprise there is elasticity and one plane inner bending arrange connecting portion, described connecting portion is between lead division and weld part.In the present invention, electrode can carry out the adjustment of any direction, and the weld layer of electrode and substrate is not subject to the destruction of external force in adjustment process, use this electrode in production installation process, improve the qualification rate of IGBT module production simultaneously, reduce the cost of IGBT module.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly relate to a kind of electrode structure and apply the IGBT module of this electrode.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, the compound full-control type voltage driven type power semiconductor be made up of BJT (double pole triode) and MOS (insulating gate type field effect tube), has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspect of GTR concurrently.GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, and driving power is little and saturation pressure reduces, and obtains and applies more and more widely, in the big or middle power application of upper frequency, occupy leading position in modern power electronics technology.
Electrode is the vitals of IGBT module, at IGBT module internal electrode by solder technology, together with DBC substrate or welding circuit board, thus forms circuit with the IGBT on DBC substrate, diode chip for backlight unit and is connected.Outside in IGBT module, electrode is connected with external circuitry as the lead-out terminal of IGBT module, and the circuit required for formation connects.
As shown in Figure 1, produce in mounting casing process in IGBT module, electrode needs the electrode hole on shell to be drawn out to IGBT module outside to the commonplace electrode of current use, needs to carry out suitable adjustment to electrode in mounting casing process.As shown in Figures 2 and 3, the power used in adjustment process, by the weld layer of electrodes transfer to electrode and DBC substrate, if this power exceedes the pulling force that weld layer can bear, can cause coming off of electrode.
Therefore, for above-mentioned technical problem, be necessary the IGBT module a kind of electrode structure being provided and applying this electrode, to overcome above-mentioned defect.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of electrode welding portion be not subject to the electrode structure of the destruction of external force and apply the IGBT module of this electrode.
To achieve these goals, the technical scheme that provides of the embodiment of the present invention is as follows:
A kind of electrode structure, described electrode structure comprises horizontally disposed weld part and vertically with described weld part arranges lead division, described electrode structure also comprise there is elasticity and one plane inner bending arrange connecting portion, described connecting portion is between lead division and weld part.
As a further improvement on the present invention, described weld part is also provided with weld part vertically disposed fixed part, described fixed part connects described weld part and connecting portion.
As a further improvement on the present invention, described lead division, connecting portion and fixed position are in same plane.
As a further improvement on the present invention, described connecting portion is identical with the width of lead division.
As a further improvement on the present invention, the width of described fixed part is less than the width of lead division.
As a further improvement on the present invention, described connecting portion is set to one or more S shape, Z-shaped, C shape at a plane inner bending.
Accordingly, a kind of IGBT module applying described electrode structure, described IGBT module comprises substrate, the IGBT be installed on substrate, chip and electrode structure and encapsulate the shell of described substrate, IGBT, chip and electrode structure, described electrode structure comprises horizontally disposed weld part and vertically with described weld part arranges lead division, described electrode structure also comprise there is elasticity and one plane inner bending arrange connecting portion, described connecting portion is between lead division and weld part.
As a further improvement on the present invention, the lead division of described electrode structure is positioned at housing exterior, and connecting portion and welding position are in enclosure.
Can be seen by above technical scheme, beneficial effect of the present invention is as follows:
Electrode structure can carry out the adjustment of any direction, and the weld layer of electrode structure and substrate is not subject to the destruction of external force in adjustment process;
Use this electrode structure in production installation process, improve the qualification rate of IGBT module production, reduce the cost of IGBT module.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of electrode in IGBT module in prior art;
Fig. 2 is the side schematic view that in prior art, in IGBT module, electrode is connected with substrate;
Fig. 3 is the front schematic view that in prior art, in IGBT module, electrode is connected with substrate;
Fig. 4 is the structural representation of electrode in the present invention one preferred implementation;
Fig. 5 is the side schematic view that in the present invention one preferred implementation, electrode is connected with substrate;
Fig. 6 is the front schematic view that in the present invention one preferred implementation, electrode is connected with substrate
Fig. 7 is the structural representation of IGBT module in the present invention one preferred implementation.
Wherein: 10, electrode structure; 11, weld part; 12, lead division; 13, connecting portion; 14, fixed part; 100, IGBT module; 20, substrate; Chip, 30; 40, IGBT; 50, shell.
Embodiment
The invention discloses a kind of electrode structure, electrode structure comprises horizontally disposed weld part and vertically with weld part arranges lead division, electrode structure also comprise there is elasticity and one plane inner bending arrange connecting portion, connecting portion is between lead division and weld part.
Preferably, weld part is also provided with weld part vertically disposed fixed part, fixed part connecting welding portion and connecting portion.
Preferably, weld part, connecting portion and fixed position are in same plane.
Preferably, connecting portion is identical with the width of lead division.
Preferably, the width of fixed part is less than the width of lead division.
Preferably, connecting portion is set to one or more S shape, Z-shaped, C shape at a plane inner bending.
In addition, the invention also discloses a kind of IGBT module applying above-mentioned electrode structure, IGBT module comprises substrate, the shell of the IGBT be installed on substrate, chip and electrode structure and base plate for packaging, IGBT, chip and electrode structure, electrode structure comprises horizontally disposed weld part and vertically with weld part arranges lead division, electrode structure also comprise there is elasticity and one plane inner bending arrange connecting portion, connecting portion is between lead division and weld part.
Preferably, the lead division of electrode structure is positioned at housing exterior, and connecting portion and welding position are in enclosure.
Electrode structure provided by the invention can carry out the adjustment of any direction, and the weld layer of electrode structure and substrate is not subject to the destruction of external force in adjustment process, use this electrode structure in production installation process, improve the qualification rate of IGBT module production simultaneously, reduce the cost of IGBT module.
Technical scheme in the present invention is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
Ginseng Figure 4 shows that the structural representation of electrode structure in the present invention one preferred implementation, electrode structure 10 in present embodiment comprises horizontally disposed weld part 11 and vertically with above-mentioned weld part 11 arranges lead division 12, electrode structure 10 also comprise there is elasticity and one plane inner bending arrange connecting portion 13, connecting portion 13 is positioned at a plane and the connecting portion 13 extended from lead division 12 to weld part 11 cyclic bending.Above-mentioned weld part 11 is also provided with weld part 11 vertically disposed fixed part 14, fixed part 14 is for connecting welding portion 11 and connecting portion 13.Certainly, fixed part 14 can not be set in other embodiments, directly connecting portion 13 be connected with weld part 11.
Shown in ginseng Fig. 5, Fig. 6, in the present embodiment, weld part 11 and substrate 20 be arranged in parallel, and weld part 11 and substrate 20 can be welded and fixed, and substrate 20 is DBC substrate or circuit board.Lead division 12, connecting portion 13 and fixed part 14 are positioned at same plane, and the plane at lead division 12, connecting portion 13 and fixed part 14 place and weld part 11 perpendicular, namely fixed part 14 is right angle with the angle of weld part 11.
Preferably, connecting portion 13 is identical with the width of lead division 12 in the present embodiment, and fixed part 14 is identical with the width of weld part 11, and the width of fixed part 14 and weld part 11 is less than the width of connecting portion 13 and lead division 12, to reduce bonding area.The width of fixed part 14 and weld part 11 also can be more than or equal to the width of connecting portion 13 and lead division 12 in other embodiments.
In the present invention, the connecting portion 13 of electrode structure 10 extends from lead division 12 to weld part 11 cyclic bending, connecting portion 13 is set to two end to end S shapes at a plane inner bending in the present embodiment, also other structures can be arranged in other embodiments, as Z-shaped, C shape etc., as long as electrode structure 10 can be made to have certain elasticity and toughness, certainly, S shape, quantity that is Z-shaped or C shape also can be carried out being set to one or more as the case may be, and the quantity of S shape is set to two in the present embodiment.
As shown in Figure 5, Figure 6, connecting portion 13 cross section is set to cyclic bending and extends S shape etc., electrode structure 10 is made to have certain elasticity and toughness, therefore the power used in electrode structure adjustment process can not be delivered to the weld layer of electrode structure and substrate by electrode structure, thus the weld layer of the good guard electrode structure of energy and substrate; The S shape etc. of electrode structure is designed and electrode structure can be made to regulate in arbitrary direction in addition.
Ginseng Figure 7 shows that the present invention applies the IGBT module structural representation of above-mentioned electrode structure, and this IGBT module 100 comprises substrate 20, the IGBT40 be installed on substrate 20, chip 30 and electrode structure 10 and encapsulate the shell 50 of described substrate 20, IGBT40, chip 30 and electrode structure 10.Shown in composition graphs 4-Fig. 6, electrode structure 10 comprises horizontally disposed weld part 11 and vertically with above-mentioned weld part 11 arranges lead division 12, electrode structure 10 also comprise there is elasticity and one plane inner bending arrange connecting portion 13, connecting portion 13 is positioned at a plane and the connecting portion 13 extended from lead division 12 to weld part 11 cyclic bending.Above-mentioned weld part 11 is also provided with weld part 11 vertically disposed fixed part 14, fixed part 14 is for connecting welding portion 11 and connecting portion 13.Certainly, fixed part 14 can not be set in other embodiments, directly connecting portion 13 be connected with weld part 11.
Weld part 11 and substrate 20 be arranged in parallel, and weld part 11 and substrate 20 can be welded and fixed, and substrate 20 is DBC substrate or circuit board.Lead division 12, connecting portion 13 and fixed part 14 are positioned at same plane, and the plane at lead division 12, connecting portion 13 and fixed part 14 place and weld part 11 perpendicular, namely fixed part 14 is right angle with the angle of weld part 11.
Electrode structure 10 is in IGBT module inside by solder technology, and weld together with substrate 10 (DBC substrate or circuit board), IGBT40 is all connected with electrical property of substrate with chip 30.Outside in IGBT module, the exit 11 of electrode structure 10 electrically conducts as the lead-out terminal of IGBT module and the external world, the electric connection required for formation.
Produce in the process of mounting casing 50, electrode structure 10 needs the electrode hole on shell 50 (not shown) to lead to IGBT module outside, needs in the process to carry out suitable adjustment to electrode structure.By the setting of above-mentioned electrode structure, the adjustment of electrode structure any direction can be ensured, and the weld layer of electrode structure and substrate is not subject to the destruction of external force, uses this electrode structure in production installation process, improve the qualification rate of IGBT module production, reduce the cost of IGBT module.
Can be seen by above technical scheme, the electrode structure that the embodiment of the present invention provides can carry out the adjustment of any direction, and the weld layer of electrode structure and substrate is not subject to the destruction of external force in adjustment process, the qualification rate improving IGBT module and produce is installed in the production of this electrode structure simultaneously, reduces the cost of IGBT module.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (4)
1. an electrode structure, described electrode structure comprises horizontally disposed weld part and vertically with described weld part arranges lead division, it is characterized in that, described electrode structure also comprise there is elasticity and one plane inner bending arrange connecting portion, described connecting portion is between lead division and weld part, described weld part is also provided with weld part vertically disposed fixed part, described fixed part connects described weld part and connecting portion, described lead division, connecting portion and fixed position are in same plane, described connecting portion is identical with the width of lead division, the width of described fixed part is less than the width of lead division.
2. electrode structure according to claim 1, is characterized in that, described connecting portion is set to one or more S shape, Z-shaped, C shape at a plane inner bending.
3. the IGBT module of electrode structure described in an application rights requirement 1, described IGBT module comprises substrate, the IGBT be installed on substrate, chip and electrode structure and encapsulate the shell of described substrate, IGBT, chip and electrode structure, described electrode structure comprises horizontally disposed weld part and vertically with described weld part arranges lead division, it is characterized in that, described electrode structure also comprise there is elasticity and one plane inner bending arrange connecting portion, described connecting portion is between lead division and weld part.
4. IGBT module according to claim 3, is characterized in that, the lead division of described electrode structure is positioned at housing exterior, and connecting portion and welding position are in enclosure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264133.0A CN102760714B (en) | 2012-07-27 | 2012-07-27 | Electrode structure and apply the IGBT module of this electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264133.0A CN102760714B (en) | 2012-07-27 | 2012-07-27 | Electrode structure and apply the IGBT module of this electrode |
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| CN102760714A CN102760714A (en) | 2012-10-31 |
| CN102760714B true CN102760714B (en) | 2015-08-19 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066045A (en) * | 2012-12-30 | 2013-04-24 | 西安永电电气有限责任公司 | Intelligent power module |
| CN104347567A (en) * | 2013-07-23 | 2015-02-11 | 西安永电电气有限责任公司 | Intelligent power module and electrode pin structure thereof |
| CN104952807A (en) * | 2015-05-04 | 2015-09-30 | 嘉兴斯达半导体股份有限公司 | Power semiconductor module adaptable to PCBs (printed circuit boards) in different thicknesses |
| CN105529313A (en) * | 2016-02-19 | 2016-04-27 | 无锡新洁能股份有限公司 | Thin type package module suitable for three-terminal power device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201478300U (en) * | 2009-07-30 | 2010-05-19 | 比亚迪股份有限公司 | Electrode structure of power module and power module |
| CN201478299U (en) * | 2009-07-30 | 2010-05-19 | 比亚迪股份有限公司 | Power module electrode and power module |
| CN201898447U (en) * | 2010-12-06 | 2011-07-13 | 西安卫光科技有限公司 | Three-phase bridge rectifier module with U-shaped buffer electrode |
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2012
- 2012-07-27 CN CN201210264133.0A patent/CN102760714B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201478300U (en) * | 2009-07-30 | 2010-05-19 | 比亚迪股份有限公司 | Electrode structure of power module and power module |
| CN201478299U (en) * | 2009-07-30 | 2010-05-19 | 比亚迪股份有限公司 | Power module electrode and power module |
| CN201898447U (en) * | 2010-12-06 | 2011-07-13 | 西安卫光科技有限公司 | Three-phase bridge rectifier module with U-shaped buffer electrode |
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| CN102760714A (en) | 2012-10-31 |
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Address after: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee after: Xi'an Zhongche Yongji Electric Co. Ltd. Address before: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province Patentee before: Xi'an Yongdian Electric Co., Ltd. |