CN102130116A - Power module applied to booster convertor - Google Patents
Power module applied to booster convertor Download PDFInfo
- Publication number
- CN102130116A CN102130116A CN2010105460624A CN201010546062A CN102130116A CN 102130116 A CN102130116 A CN 102130116A CN 2010105460624 A CN2010105460624 A CN 2010105460624A CN 201010546062 A CN201010546062 A CN 201010546062A CN 102130116 A CN102130116 A CN 102130116A
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- China
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- crystal grain
- lead
- frd
- igbt
- power model
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
The invention provides a power module comprising at least one lead frame, a crystal grain insulated gate bipolar transistor (IGBT), a crystal fast recover diode (FRD) and a sealant. The crystal grain IGBT and the crystal grain FRD are respectively loaded on the lead frame; a grid electrode of the crystal grain IGBT is electrically connected to a grid lead wire through a lead wire connector, and an emitting electrode is electrically connected to an emitting electrode lead wire through a lead wire connector; a cathode of the crystal grain FRD is electrically connected with a cathode lead wire, and an anode of the crystal grain FRD, a collector electrode of the crystal grain IGBT and a collector lead wire are electrically connected; and the sealant is used for sealing the lead frame, the crystal grain IGBT, the crystal grain FRD, the lead wire connectors, part of the grid lead wire, the emitting electrode lead wire, the cathode lead wire and the collector lead wire. By the power module, the cost can be effectively lowered, the process difficulty is reduced, and the usage area of a printed circuit board (PCB) is saved.
Description
Technical field
The present invention relates to a kind of power model that is applied to the 4-lead-in wire TO-247 encapsulation of boost converter.
Background technology
The Switching Power Supply boost converter has general application in the household electrical appliance that comprise air-conditioning, liquid crystal television power supply plate etc., especially in high-power, have in the application of power factor standard, boost converter has obtained widely using.Fig. 1 has shown a kind of main body circuit of boost converter of routine, mainly comprises insulated gate bipolar transistor IGBT 210, fast recovery diode FRD220 and the output electric capacity of voltage regulation of master control IC (being used to control the switch of IGBT210), boost inductance, rectifier bridge, band parallel diode FRD.Wherein the anode of the collector electrode of IGBT210 and FRD220 links together in a usual manner, and the negative electrode of FRD220 is an output.
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) have metal oxide semiconductcor field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor concurrently, MOSFET) high input impedance and low conduction voltage drop two aspect advantages are fit to be applied to fields such as 600V and above frequency converter, Switching Power Supply very much.Fast recovery diode (Fast Recover Diode, it is good FRD) to have a switching characteristic, and the characteristics that reverse recovery time is short are mainly used in the electronic circuits such as Switching Power Supply, PWM pulse width modulator, frequency converter.IGBT device and FRD device cost are all than higher, and the proportion that accounts in boost converter also is bigger.
IGBT device in the boost converter has two kinds at present, a kind of is to encapsulate after adopting special technology that IGBT and FRD are integrated into a crystal grain, or use single tube IGBT and single tube diode FRD plastic packaging together, use (being mainly used in the circuit that resonance etc. needs diode FRD afterflow) as the IGBT device, as the IGBT210 among Fig. 1.Another kind is to use single tube IGBT plastic packaging to use as the IGBT device, as the IGBT230 among Fig. 2.And boost converter uses IGBT210 or uses IGBT230 on principle, and its effect is the same.But single tube IGBT230 is not because range of application has IGBT210 extensive, so production capacity deficiency of supplier, the product line cost is too high, causing single tube IGBT230 is very nearly the same on price than IGBT210, so in the application of boost converter or select IGBT210, or the selection single tube IGBT230 the same with the IGBT210 price.That is to say that adopt Fig. 1 or scheme shown in Figure 2, for electrical equipment scheme manufacturer, cost is the same,, do not seal among the IGBT 230 or integrated diode FRD crystal grain and reducing not because of in the scheme shown in Figure 2.
Be the cost of reduction appliances power source scheme, (Printed Circuit Board, area PCB), and reduce a plurality of devices are installed in trouble on the module radiator need a kind of new power model urgently to save circuit board.
Summary of the invention
The invention provides a kind of power model that is applied to the 4-lead-in wire TO-247 encapsulation of boost converter, crystal grain IGBT310 and crystal grain FRD320 are encapsulated in the power model 300, as shown in Figure 3, thereby make the cost of boost converter lower, the PCB space obtains saving, and reduces the trouble that device is installed.
The invention discloses a kind of power model, comprising: at least one lead frame carries crystal grain IGBT and crystal grain FRD respectively, and is overlying on the copper sheet on it; The grid of described crystal grain IGBT is electrically connected to grid lead by lead binding apparatus, and emitter is electrically connected to emitter terminal by lead binding apparatus; The negative electrode of described crystal grain FRD and cathode leg are electrically connected and connect, and collector electrode and the collector terminal of the anode of described crystal grain FRD, described crystal grain IGBT are electrically connected, and the negative electrode soldering of described crystal grain FRD is on lead frame; A kind of sealant is used for described lead frame, crystal grain IGBT, crystal grain FRD, lead binding apparatus, part of grid pole lead-in wire, emitter terminal, cathode leg, collector terminal sealing.
The invention also discloses a kind of power model that is applied to boost converter, it comprises: a lead frame is overlying on the copper sheet, carries crystal grain IGBT and crystal grain FRD on it, and described lead frame also comprises a collector terminal; The grid of described crystal grain IGBT is connected to grid lead by lead binding apparatus, and emitter is connected to emitter terminal by lead binding apparatus; If the negative electrode of described crystal grain FRD is connected to cathode leg by lead binding apparatus, the collector electrode of described crystal grain FRD anode and described crystal grain IGBT is overlying on the described lead frame, and realizes connecting with this; A kind of sealant is used for described lead frame, crystal grain IGBT, crystal grain FRD, lead binding apparatus, part of grid pole lead-in wire, emitter terminal, cathode leg, collector terminal sealing.
We have carried out concise and to the point general introduction to feature important among the present invention, so that can better understand following detailed description, also are more prone to understand the contribution that the present invention makes this technology.Together with the following drawings and explanation, can better understand feature and advantage more of the present invention.
Description of drawings
Fig. 1 is a kind of boost converter main body circuit diagram that adopts the IGBT of band diode FRD;
Fig. 2 is that a kind of employing is not with the boost converter main body circuit diagram of the IGBT of diode FRD;
Fig. 3 is the block diagram of power model of the present invention;
Fig. 4 is the boost converter main body circuit diagram that adopts power model of the present invention;
Fig. 5 is the schematic diagram 1 according to power model of the present invention inside;
Fig. 6 is the schematic diagram 2 according to power model of the present invention inside;
Fig. 7 is the top view 1 according to 4-lead-in wire TO-247 of the present invention encapsulation;
Fig. 8 is the top view 2 according to 4-lead-in wire TO-247 of the present invention encapsulation;
Embodiment
Please consult Fig. 1, Fig. 3 and Fig. 4 simultaneously.The present invention is encapsulated into crystal grain IGBT310 and crystal grain FRD320 in the power model 300, comparison diagram 4 and Fig. 1, we can see that the power model 300 among Fig. 4 can replace IGBT210 and the FRD220 among Fig. 1, thereby, under the situation of using power model 300, reduced cost.The cost of power model 300 and IGBT210 is equal to, because 300 crystal grain is the same with grain specification among the IGBT 210 in the power model, and adopts same TO-247 typical package.Adopt the boost converter main body circuit of power model 300 like this, as Fig. 4, than the boost converter main body circuit (as shown in Figure 1) that adopts IGBT210 and the discrete scheme of FRD220, saved a FRD220 (we have illustrated that it is the same adopting the discrete scheme cost of Fig. 1 and Fig. 2 the front), thereby greatly reduce cost, reduce simultaneously the area of PCB again, reduced the trouble that device is installed.
According to shown in Figure 5, power model adopts the TO-247 encapsulation, has carried crystal grain IGBT510 and crystal grain FRD520 on the lead frame 500, and lead frame 500 solderings are on copper sheet 530.Copper sheet 530 has the effect of two aspects, and the one, heat radiation, the 2nd, when installed module is to external heat sink, the chip that protection is inner.Certainly, also can select other sheet metal as the case may be for use, such as the sheet metal of the good heat conductivity of aluminium and so on.
The grid G of crystal grain IGBT510 is passed through lead binding apparatus 540 wire bonds on grid lead G1, the emitter E of crystal grain IGBT 510 is passed through lead binding apparatus 550 wire bonds on emitter terminal E2, the negative electrode B of crystal grain FRD520 passes through lead binding apparatus 560 wire bonds on cathode leg O3, and the anode tin of the collector electrode of crystal grain IGBT510 and crystal grain FRD520 is welded on the lead frame 500, realize interconnected with this, and be connected, thereby the collector electrode of IGBT and the anode of FRD are picked out with collector terminal C4.Then, utilize sealant 570 with lead frame 500, crystal grain IGBT510, crystal grain FRD 520, lead binding apparatus 540～560, part of grid pole lead-in wire, emitter terminal, collector terminal, cathode leg sealing.
As shown in Figure 7, according to 4-lead-in wire TO-247 package power module 700 of the present invention, it has comprised plastics rolled-up stock 710 and radiating copper sheet 720.
Intention of the present invention can also have another mode to realize, the specific implementation method:
As shown in Figure 6, power model adopts the TO-247 encapsulation, and lead frame 600 has carried crystal grain IGBT610 and crystal grain FRD620, and is divided into two parts, and soldering is on copper sheet 640 and 630 respectively. Copper sheet 630 and 640 has two effects, and the one, heat radiation, the 2nd, when installed module is to external heat sink, the chip that protection is inner.Certainly, also can select other sheet metal as the case may be for use, such as aluminium, alloy or the like.
On grid lead G1, the emitter E of crystal grain IGBT 610 is passed through lead binding apparatus 680 wire bonds on emitter terminal E2 to the grid G of crystal grain IGBT610 by lead binding apparatus 670 wire bonds.The collector electrode soldering of crystal grain IGBT610 is on lead frame 600, by lead binding apparatus 660 wire bonds on collector terminal C4, anode A by lead binding apparatus 650 and FRD620 is connected (perhaps by wire bonder 650 anode A of FRD being connected directly to collector terminal C4), and the anode A that so can guarantee the collector electrode of crystal grain IGBT 610 and FRD620 is electrically connected and connects.The negative electrode soldering of crystal grain FRD620 and is connected with cathode leg O3 on lead frame 600.Then, utilize sealant 690 with lead frame 600, crystal grain IGBT610, crystal grain FRD620, lead binding apparatus 650～680, part of grid pole lead-in wire, emitter terminal, collector terminal, cathode leg sealing.
As shown in Figure 8, according to the 4-lead-in wire TO-247 package power module 800 of present embodiment, it has comprised plastics rolled-up stock 810 and radiating copper sheet 820 and 830.
In said process, be electrically connected as long as guarantee the collector electrode of crystal grain IGBT, anode and the collector terminal three of crystal grain FRD, and which polarity and the lead frame that are not limited to crystal grain FRD fit.
The present invention never only is confined to the detail in the method that stated or that accompanying drawing is shown in above-mentioned introduction, and the present invention can have other embodiment, also can implement or realizes in other mode.In addition, must recognize also that employed wording, term only are for the purpose of narrating here, never will think to only limit to this.
Claims (10)
1. power model comprises:
At least one lead frame carries crystal grain IGBT and crystal grain FRD respectively on it;
The grid of described crystal grain IGBT is electrically connected to grid lead by lead binding apparatus, and emitter is electrically connected to emitter terminal by lead binding apparatus;
Negative electrode and the cathode leg of described crystal grain FRD are electrically connected, and collector electrode and the collector terminal of the anode of described crystal grain FRD, described crystal grain IGBT are electrically connected;
A kind of sealant is used for described lead frame, crystal grain IGBT, crystal grain FRD, lead binding apparatus, part grid lead-in wire, emitter terminal, cathode leg, collector terminal sealing.
2. power model as claimed in claim 1 is characterized in that described power model also comprises at least one sheet metal, is used to carry described lead frame.
3. power model as claimed in claim 2 is characterized in that, described lead frame soldering is on corresponding described sheet metal.
4. power model as claimed in claim 2 is characterized in that, described sheet metal is a copper sheet, or aluminium flake, or the sheet metal of other good heat conductivity.
5. power model as claimed in claim 1 is characterized in that, the negative electrode of described crystal grain FRD is overlying on the lead frame and by lead frame, is electrically connected with described cathode leg; The anode of perhaps described crystal grain FRD is overlying on the lead frame, and the negative electrode of described crystal grain FRD is electrically connected with described cathode leg by lead binding apparatus.
6. power model as claimed in claim 1 is characterized in that, the collector electrode of the anode of described crystal grain FRD and described crystal grain IGBT is electrically connected to described collector terminal after being electrically connected by lead binding apparatus again.
7. power model as claimed in claim 1 is characterized in that, the collector electrode of the anode of described crystal grain FRD and described crystal grain IGBT is electrically connected to described collector terminal by lead binding apparatus respectively.
8. as any described power model in the claim 1,2,5,6,7, it is characterized in that described power model is 4-lead-in wire TO-247 encapsulation.
9. power model that is applied to boost converter, it comprises:
A lead frame is overlying on the copper sheet, carries crystal grain IGBT and crystal grain FRD on it, and described lead frame also comprises a collector terminal;
The grid of described crystal grain IGBT is connected to grid lead by lead binding apparatus, and emitter is connected to emitter terminal by lead binding apparatus;
If the negative electrode of described crystal grain FRD is connected to cathode leg by lead binding apparatus, the collector electrode of described crystal grain FRD anode and described crystal grain IGBT is overlying on the described lead frame;
A kind of sealant is used for described lead frame, crystal grain IGBT, crystal grain FRD, lead binding apparatus, part of grid pole lead-in wire, emitter terminal, cathode leg, collector terminal sealing;
10. power model according to claim 9 is characterized in that, described module is 4-lead-in wire TO-247 encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105460624A CN102130116A (en) | 2010-11-15 | 2010-11-15 | Power module applied to booster convertor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105460624A CN102130116A (en) | 2010-11-15 | 2010-11-15 | Power module applied to booster convertor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102130116A true CN102130116A (en) | 2011-07-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105460624A Pending CN102130116A (en) | 2010-11-15 | 2010-11-15 | Power module applied to booster convertor |
Country Status (1)
| Country | Link |
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| CN (1) | CN102130116A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065978A (en) * | 2012-12-25 | 2013-04-24 | 佛山市蓝箭电子股份有限公司 | Composite loading ligature method of insulated gate bipolar translator (IGBT) device |
| CN109639140A (en) * | 2019-01-11 | 2019-04-16 | 武汉精立电子技术有限公司 | A kind of pcb board of DC-DC Switching Power Supply |
| CN113394204A (en) * | 2020-03-11 | 2021-09-14 | 珠海格力电器股份有限公司 | Power semiconductor device and method for manufacturing power semiconductor device |
-
2010
- 2010-11-15 CN CN2010105460624A patent/CN102130116A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065978A (en) * | 2012-12-25 | 2013-04-24 | 佛山市蓝箭电子股份有限公司 | Composite loading ligature method of insulated gate bipolar translator (IGBT) device |
| CN103065978B (en) * | 2012-12-25 | 2015-04-08 | 佛山市蓝箭电子股份有限公司 | Composite loading ligature method of insulated gate bipolar translator (IGBT) device |
| CN109639140A (en) * | 2019-01-11 | 2019-04-16 | 武汉精立电子技术有限公司 | A kind of pcb board of DC-DC Switching Power Supply |
| CN113394204A (en) * | 2020-03-11 | 2021-09-14 | 珠海格力电器股份有限公司 | Power semiconductor device and method for manufacturing power semiconductor device |
| CN113394204B (en) * | 2020-03-11 | 2022-07-15 | 珠海格力电器股份有限公司 | Power semiconductor device and method for manufacturing power semiconductor device |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| DD01 | Delivery of document by public notice |
Addressee: Shenzhen Weiyi Electric Co.,Ltd. Document name: Notification of before Expiration of Request of Examination as to Substance |
|
| DD01 | Delivery of document by public notice |
Addressee: Shenzhen Weiyi Electric Co.,Ltd. Document name: Notification that Application Deemed to be Withdrawn |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110720 |