CN110676235A - Novel power MOS module structure convenient to expand - Google Patents
Novel power MOS module structure convenient to expand Download PDFInfo
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- CN110676235A CN110676235A CN201911022020.8A CN201911022020A CN110676235A CN 110676235 A CN110676235 A CN 110676235A CN 201911022020 A CN201911022020 A CN 201911022020A CN 110676235 A CN110676235 A CN 110676235A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 107
- 239000011889 copper foil Substances 0.000 claims abstract description 93
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a novel power MOS module structure convenient to expand, which comprises a DBC board with copper foils covered on two sides, wherein two groups of power MOS modules are further arranged on the DBC board, at least 2 MOS tubes connected in parallel in rows are integrated in each group of power MOS modules, the source electrode of the MOS tube of each group of power MOS modules is commonly connected to a source electrode output end copper foil and 1 source electrode control end copper foil on the DBC board, the drain electrode of each group of power MOS modules is connected to a drain electrode input end copper foil on the DBC board, a control terminal is led out from the drain electrode input end copper foil, the grid electrode of each group of power MOS modules is connected with a grid electrode control end copper foil, and main terminals are welded on the drain electrode input end copper. The invention has compact layout, high integration level and small volume, effectively reduces the influence of voltage and current peaks on the whole circuit and prevents devices from being burnt out.
Description
Technical Field
The invention relates to the field of power modules, in particular to a novel power MOS module structure convenient to expand.
Background
In the power electronic module technology, the DBC board is mainly used as a carrier for various chips such as IGBT chips, Diode chips, resistors, SiC chips, and the like, and the DBC board completes connection of connection electrodes or connection surfaces of part of the chips through a surface copper-clad layer, and has a function similar to a PCB board. With the development of electronic power technology, MOS transistors are increasingly widely used due to their advantages of good high-frequency performance, low switching loss, high output impedance, low driving power, and the like. The power MOS module is a module which is formed by encapsulating MOS tubes according to a certain functional combination, the power MOS module is generally used by matching with other external devices when in use, the integration level of the existing power module is not high, the output power is small, the module utilization rate is low, more input and output terminals are provided, the structure is complex, the manufacturing volume of the power module is large, because the power MOS module has the wiring problem on a DBC board, larger parasitic capacitance and inductance are generated in the complex module by being electrically connected with the external, in the turn-off and turn-on processes of the power MOS module, the grid electrode of the MOS tube generates voltage spike pulse, the device is damaged, the power MOS module is easy to burn, and the normal work of the whole circuit is influenced.
Disclosure of Invention
The invention aims to: a novel power MOS module structure convenient to expand is provided, and the problems in the background art are solved.
The technical scheme adopted by the invention is as follows:
the invention discloses a novel power MOS module structure convenient to expand, which comprises a DBC board with copper foils covered on two sides, wherein two groups of power MOS modules are further arranged on the DBC board, at least 2 MOS tubes connected in parallel in rows are integrated in each group of power MOS modules, the source electrode of the MOS tube of each group of power MOS modules is commonly connected to a source electrode output end copper foil and 1 source electrode control end copper foil on one DBC board, the drain electrode of each group of power MOS modules is connected to a drain electrode input end copper foil on the DBC board, a control terminal is led out from the drain electrode input end copper foil, the grid electrode of each group of power MOS modules is connected with the grid electrode control end copper foil, main terminals are welded on the drain electrode input end copper foil and the source electrode output end copper foil of each group of power MOS modules, and the source electrode output end copper foil connected with one group.
In the invention, each group of power MOS modules integrates at least 2 MOS tubes which are connected in parallel and arranged in a row, the layout of the MOS tubes is compact, the integration level is high, and higher power can be output; a control terminal is led out from a copper foil at the drain input end of each group of power MOS modules, a source electrode is connected with 1 copper foil at the source control end and is used for externally connecting a drive board circuit, main terminals are welded on the copper foils at the drain input end and the source output end of each power MOS module and are used for connecting a large-current output loop, and the source output loop and the control end of each power MOS module are separated, so that the mutual influence between the power MOS module and the large-current output loop of the source electrode is avoided, the influence of voltage and current peaks on the whole circuit is reduced, and the burning of devices is prevented; the MOS tube on the whole DBC board is compact in wiring, and parasitic inductance, capacitance and the like are effectively reduced. In the invention, a source output end copper foil connected with one group of power MOS modules is connected with a drain input end copper foil connected with the other group of power MOS modules and is commonly connected with a main terminal, the main terminal is arranged on one side of a DBC plate and is connected with an external Vo, the other side of the DBC plate is also provided with two main terminals which are respectively connected with V + and V-, the main terminal externally connected with V + is welded on the drain input end copper foil of one group of power MOS modules, the main terminal externally connected with V-is welded on the source output end copper foil of the other group of power MOS modules, a miniaturized DBC plate with three main terminals and an externally connected large-current output loop are adopted, the structure is simple, the wiring is simplified, and the multifunctional module can be applied to motor control and BMS occasions by changing the internal wiring of the DBC.
Furthermore, each group of power MOS module is divided into at least two power MOS small modules which are connected in parallel, the MOS tube grid of each power MOS small module is respectively connected with 1 grid control end copper foil, and each grid control end copper foil is controlled and connected by an external circuit. By adopting the structure, the grids of the two power MOS small modules which are connected in parallel are not directly connected and are respectively connected with the copper foils at the control ends of 1 grid, and the copper foils at the control ends of 2 grids are controlled and connected by an external circuit, so that the voltage spike pulse of the grid in the application of an MOS tube can be effectively reduced.
Furthermore, each power MOS small module integrates at least 1 MOS tube. By adopting the structure, the power MOS module has higher integration level and higher reliability, and is suitable for larger power devices.
Furthermore, the MOS tube of each group of power MOS module is packaged on the copper foil at the input end of the drain electrode by adopting a patch. By adopting the structure, the manufacturing volume of the power MOS module can be reduced, the requirement of passing a large current can be met, larger power can be output, the path length of the current can be shortened, and heating is reduced.
Furthermore, auxiliary terminals are welded on the gate control end copper foil and the source control end copper foil, and the auxiliary terminals are arranged on two sides of the DBC board and are used for being connected with an external drive board through a circuit. By adopting the auxiliary terminal, the copper foil of each control end of the power MOS module is convenient to be connected with an external circuit through the auxiliary terminal.
Furthermore, a thermistor is further arranged on the DBC board, and two lead terminals connected with the thermistor are led out from one side of the DBC board. By adopting the structure, the temperature of the power MOS module on the DBC board is monitored so as to adjust the heat dissipation strength of the external heat dissipation device.
Furthermore, the power MOS module is packaged on the DBC board through epoxy resin molding compound. Adopt above-mentioned structure, its heat conductivility is good, and the heat dissipation of being convenient for is difficult for deformation, and is dampproofing, and corrosion resistance is strong, compares the sealed occasion of conventional use silica gel, in the aspect of reliability and life-span promotion that all can be great, guarantees the good of internal power MOS module and nation line etc. can be used to the power MOS module of high-power electrical apparatus.
Furthermore, the MOS tubes are respectively connected with the grid control end copper foil, the source control end copper foil and the source output end copper foil through aluminum strips.
Furthermore, the MOS tubes are respectively connected with the grid control end copper foil, the source control end copper foil and the source output end copper foil through bonding wires.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the invention is a novel power MOS module structure convenient for expansion, each group of power MOS module can integrate a plurality of MOS tubes which are connected in parallel and in a row, the MOS tubes are welded on a DBC plate by adopting a surface mounting process, the layout is compact, the volume is small, the integration level is high, the heating is reduced, the passing of large current is met, and larger power can be output.
2. The invention is a novel power MOS module structure convenient for expansion, a source electrode output loop and a control end of the power MOS module are separated, so that the mutual influence between the power MOS module and a source electrode heavy current output loop is avoided, the influence of voltage and current peaks on the whole circuit is reduced, and devices are prevented from being burnt out.
3. The invention is a novel power MOS module structure convenient for expansion, the layout of the MOS tube of each power MOS module is compact, and the influence of parasitic inductance, parasitic capacitance and the like of the whole device is effectively reduced.
4. The invention is a novel power MOS module structure convenient for expansion, which adopts a miniaturized DBC board with three main terminals and is externally connected with a large-current output loop.
5. The invention relates to a novel power MOS module structure convenient to expand, wherein a thermistor is arranged on a DBC board to monitor the temperature of a power MOS module on the DBC board so as to adjust the heat dissipation strength of an external heat dissipation device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a circuit schematic of the present invention;
FIG. 3 is a schematic diagram of the packaged structure of the present invention;
fig. 4 is a schematic diagram of the back side structure after the package of the present invention.
The reference numbers illustrate: the circuit comprises a 1-DBC board, a 2-MOS tube, a 3-drain electrode input end copper foil, a 4-source electrode output end copper foil, a 5-source electrode control end copper foil, a 6-grid electrode control end copper foil, a 7-main terminal, an 8-control terminal, a 9-auxiliary terminal, a 10-thermistor and an 11-lead terminal.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations where mutually exclusive features are expressly stated.
The features and properties of the present invention are described in further detail below with reference to examples.
Example 1
As shown in fig. 1-4, the present invention is a novel power MOS module structure convenient for expansion, including a DBC board 1 with copper foil coated on both sides, the DBC plate 1 is also provided with two groups of power MOS modules, each group of power MOS modules integrates at least 2 MOS tubes 2 which are connected in parallel and arranged in a row, the sources of the MOS tubes 2 of each group of power MOS modules are commonly connected with a source output end copper foil 4 and 1 source control end copper foil 5 on one DBC plate 1, the drains are connected with a drain input end copper foil 3 on the DBC plate 1, a control terminal 8 is led out from the drain input end copper foil 3, the grid electrode is connected with the grid electrode control end copper foil 6, a main terminal 7 is welded on the drain input end copper foil 3 and the source output end copper foil 4 of each group of power MOS module, the source output end copper foil 4 connected with one group of power MOS modules is connected with the drain input end copper foil 3 connected with the other group of power MOS modules and shares one main terminal 7.
In the invention, the DBC board 1 adopts an aluminum nitride ceramic substrate, the heat dissipation effect is good, the service life is long, two groups of power MOS modules are also arranged on the DBC board 1, each group of power MOS modules integrates at least 2 MOS tubes 2 which are connected in parallel and arranged in rows, a plurality of MOS tubes 2 can be integrated according to the requirement, the layout of the MOS tubes 2 is compact, the integration level is high, and higher power can be output; a control terminal 8 is led out from a drain electrode input end copper foil 3 of each group of power MOS module, a source electrode is connected with 1 source electrode control end copper foil 5 for externally connecting a drive board circuit, a main terminal 7 is welded on a drain electrode input end copper foil 3 and a source electrode output end copper foil 4 of each group of power MOS module and is used for connecting a large-current output loop, and the source electrode output loop and the control end of each group of power MOS module are separated, so that the mutual influence between the power MOS module and the large-current output loop of the source electrode is avoided, the influence of voltage and current peaks on the whole circuit is reduced, and the device is; the MOS tube 2 on the whole DBC board 1 is compact in wiring, and parasitic inductance, capacitance and the like are effectively reduced. In the invention, a source output end copper foil 4 connected with one group of power MOS modules is connected with a drain input end copper foil 3 connected with the other group of power MOS modules, and is commonly connected with a main terminal 7, the main terminal 7 is arranged on one side of a DBC plate 1 and is connected with an external Vo, the other side of the DBC plate 1 is also provided with two main terminals 7 which are respectively connected with V + and V-, the main terminal 7 externally connected with V + is welded on the drain input end copper foil 3 of one group of power MOS modules, the main terminal 7 externally connected with V-is welded on the source output end copper foil 4 of the other group of power MOS modules, the miniaturized DBC plate 1 adopting three main terminals 7 is externally connected with a large current output loop, the structure is simple, the wiring is simplified, the module can be applied to motor control, and in BMS occasions, and the multifunction of the module is realized by changing the internal wiring of.
Example 2
This example is a further illustration of the present invention.
As shown in fig. 1, in this embodiment, on the basis of embodiment 1, in a preferred embodiment of the present invention, each group of power MOS module is further divided into at least two power MOS small modules connected in parallel, a gate of an MOS transistor 2 of each power MOS small module is respectively connected to 1 gate control end copper foil 6, and each gate control end copper foil 6 is controlled and connected by an external circuit. By adopting the structure, the grid electrodes of the MOS tubes 2 of the two parallel power MOS small modules are not directly connected and are respectively connected with the copper foil 6 of the 1 grid electrode control end, and the copper foil 6 of the 2 grid electrode control ends are controlled and connected by an external circuit, so that the voltage spike pulse of the grid electrode in the application of the MOS tubes 2 can be effectively reduced.
In a preferred embodiment of the invention, at least 1 MOS transistor 2 is integrated in each power MOS submodule. By adopting the structure, each power MOS small module can integrate 1, 2 or a plurality of MOS tubes 2 according to actual requirements, so that the power MOS module has higher integration level and higher reliability and is suitable for larger power devices.
Example 3
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above description, in a preferred embodiment of the present invention, the MOS transistor 2 of each group of power MOS modules is packaged on the copper foil 3 of the drain input end by using a patch. By adopting the structure, the manufacturing volume of the power MOS module can be reduced, the requirement of passing a large current can be met, larger power can be output, the path length of the current can be shortened, and heating is reduced.
Example 4
This example is a further illustration of the present invention.
As shown in fig. 1 and 3, in this embodiment, on the basis of the above embodiments, in a preferred embodiment of the present invention, auxiliary terminals 9 are welded to both the gate control terminal copper foil 6 and the source control terminal copper foil 5, and the auxiliary terminals 9 are disposed on both sides of the DBC board 1 and are used for being electrically connected to an external driving board. By adopting the auxiliary terminal, the copper foil of each control end of the power MOS module is convenient to be connected with an external circuit through the auxiliary terminal 9.
Example 5
This example is a further illustration of the present invention.
As shown in fig. 1, in this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, a thermistor 10 is further disposed on the DBC board 1, and two lead terminals 11 connected to the thermistor 10 are further led out from one side of the DBC board 1. By adopting the structure, the temperature of the power MOS module on the DBC board is monitored so as to adjust the heat dissipation strength of the external heat dissipation device.
Example 6
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, the power MOS module is encapsulated on the DBC board 1 by an epoxy resin molding compound. Adopt above-mentioned structure, its heat conductivility is good, and the heat dissipation of being convenient for is difficult for deformation, and is dampproofing, and corrosion resistance is strong, compares the sealed occasion of conventional use silica gel, in the aspect of reliability and life-span promotion that all can be great, guarantees the good of internal power MOS module and nation line etc. can be used to the power MOS module of high-power electrical apparatus.
Example 7
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, the MOS transistors 2 are respectively connected to the gate control terminal copper foil 6, the source control terminal copper foil 5, and the source output terminal copper foil 4 through aluminum strips.
Example 8
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, the MOS transistors 2 are respectively connected to the gate control terminal copper foil 6, the source control terminal copper foil 5, and the source output terminal copper foil 4 through bonding wires.
The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be made by those skilled in the art without inventive work within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope defined by the claims.
Claims (9)
1. The utility model provides a novel power MOS module structure convenient to extension which characterized in that: the power MOS module comprises a DBC plate (1) with copper foils covered on two sides, two groups of power MOS modules are further arranged on the DBC plate (1), at least 2 MOS tubes (2) connected in parallel in rows are integrated in each group of power MOS modules, the source electrode of each MOS tube (2) of each group of power MOS modules is commonly connected to a source electrode output end copper foil (4) and 1 source electrode control end copper foil (5) on one DBC plate (1), the drain electrode is connected to a drain electrode input end copper foil (3) on the DBC plate (1), a control terminal (8) is led out from the drain input end copper foil (3), the grid electrode is connected with the grid electrode control end copper foil (6), a main terminal (7) is welded on the drain input end copper foil (3) and the source output end copper foil (4) of each group of power MOS module, the copper foil (4) of the source output end connected with one group of power MOS module is connected with the copper foil (3) of the drain input end connected with the other group of power MOS module and shares one main terminal (7).
2. The novel power MOS module structure convenient for expansion according to claim 1, wherein: each group of power MOS module is divided into at least two power MOS small modules which are connected in parallel, the grid of an MOS tube (2) of each power MOS small module is respectively connected with 1 grid control end copper foil (6), and each grid control end copper foil (6) is controlled and connected by an external circuit.
3. The novel power MOS module structure convenient for expansion according to claim 2, wherein: at least 1 MOS tube (2) is integrated in each power MOS small module.
4. The novel power MOS module structure convenient for expansion according to claim 1, wherein: and the parallel MOS tubes (2) of each group of power MOS module are packaged on the copper foil (3) at the input end of the drain electrode by adopting a patch.
5. The novel power MOS module structure convenient for expansion according to claim 1, wherein: auxiliary terminals (9) are welded on the grid control end copper foil (6) and the source control end copper foil (5), and the auxiliary terminals (9) are arranged on two sides of the DBC board (1) and are used for being connected with an external drive board circuit.
6. The novel power MOS module structure convenient for expansion according to claim 1, wherein: the DBC board (1) is further provided with a thermistor (10), and two lead terminals (11) connected with the thermistor (10) are led out from one side of the DBC board (1).
7. The novel power MOS module structure convenient for expansion according to claim 1, wherein: the power MOS module is packaged on the DBC board (1) through epoxy resin plastic package materials.
8. The novel power MOS module structure convenient for expansion according to claim 1, wherein: the MOS tube (2) is respectively connected with a grid control end copper foil (6), a source control end copper foil (5) and a source output end copper foil (4) through aluminum strips.
9. The novel power MOS module structure convenient for expansion according to claim 1, wherein: the MOS tube (2) is respectively connected with a grid control end copper foil (6), a source control end copper foil (5) and a source output end copper foil (4) through bonding wires.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111769081A (en) * | 2020-05-28 | 2020-10-13 | 佛山市国星光电股份有限公司 | Integrated module and power device |
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