CN217468405U

CN217468405U - Packaging structure of GaN switching power supply module

Info

Publication number: CN217468405U
Application number: CN202221393967.7U
Authority: CN
Inventors: 刘洋
Original assignee: Shenzhen Qinji Technology Co ltd
Current assignee: Shenzhen Qinji Technology Co ltd
Priority date: 2022-06-06
Filing date: 2022-06-06
Publication date: 2022-09-20
Anticipated expiration: 2032-06-06

Abstract

The embodiment of the utility model discloses packaging structure of GaN switching power supply module. The packaging structure comprises: the device comprises a device stacking layer, a metal wiring layer, an insulating layer, a metal substrate and a plastic package body which are sequentially stacked; the device stacking layer is used for stacking module devices of the GaN switching power supply module; the metal wiring layer is used for providing electrical connection for the module device; the plastic package body wraps the whole outer sides of the device stacking layer, the metal wiring layer, the insulating layer and the metal substrate. The embodiment of the utility model provides a packaging structure of gaN switching power supply module through with gaN switching power supply module integration to metal substrate, has solved the heat dissipation problem in the gaN semiconductor switch tube device is used, when the product application is done to the end customer, can directly use, has reduced supplementary heat dissipation processing part to the waste of material has been reduced, and provides convenient to use for the end customer.

Description

Packaging structure of GaN switching power supply module

Technical Field

The embodiment of the utility model provides a relate to switching power supply technical field, especially relate to a packaging structure of GaN switching power supply module.

Background

The GaN semiconductor switching tube can be applied to ultrahigh working frequency, has the advantages of small capacitance, small internal resistance and the like, and has great advantages in product design. However, when the GaN semiconductor switch tube works, the body temperature rises, heat dissipation is needed, the conventional scheme needs to be additionally added with auxiliary heat dissipation treatment, the cost is high, the reliability is insufficient, an additional design needs to be made for a terminal product, the use of a terminal customer is inconvenient, the application is not many at present, and the market popularization is insufficient.

SUMMERY OF THE UTILITY MODEL

The embodiment of the utility model provides a packaging structure of GaN switching power supply module to reduce supplementary heat dissipation processing part, thereby reduce the waste of material, and provide convenient to use for the terminal customer.

The embodiment of the utility model provides a packaging structure of GaN switching power supply module, this packaging structure includes: the device comprises a device stacking layer, a metal wiring layer, an insulating layer, a metal substrate and a plastic package body which are sequentially stacked; wherein,

the device stacking layer is used for stacking module devices of the GaN switch power supply module;

the metal wiring layer is used for providing electrical connection for the module device;

the plastic package body wraps the whole outer sides of the device stacking layer, the metal wiring layer, the insulating layer and the metal substrate.

Optionally, the package structure further includes: and the fixed pin is used for leading out a function input contact and a function output contact of the GaN switch power supply module, and the fixed pin is led out from the inside of the plastic package.

Optionally, the metal substrate includes a function lead-out solder joint, and the fixing pin is fixed to the function lead-out solder joint.

Optionally, the fixed pin includes a driving voltage input pin, and the driving voltage input pin is directly connected to a driving voltage input contact of the GaN switching power supply module.

Optionally, the metal substrate has a first opening, and the driving voltage input pin is connected to the driving voltage input contact through the first opening.

Optionally, a second opening is formed in the metal substrate, a third opening and a fourth opening are formed in the metal wiring layer and the insulating layer at positions corresponding to the second opening, the metal wiring layer is in short circuit with the metal substrate through the third opening and the fourth opening, and the metal substrate is grounded.

Optionally, the metal wiring layer and the metal substrate are short-circuited through a keyhole or a screw.

Optionally, the method further includes, between the insulating layer and the metal substrate: graphene heat conducting layer.

Optionally, the module device includes a GaN semiconductor switch tube, a power controller, a resistor, a capacitor, a diode, and a triode.

Optionally, the GaN semiconductor switch tube and the power supply controller are sealed.

The embodiment of the utility model provides a packaging structure of GaN switching power supply module, pile up layer, metal wiring layer, insulating layer and metal substrate including the device that stacks gradually the setting to and the plastic-sealed body. The device stacking layer is used for stacking module devices, the metal wiring layer is used for providing electrical connection for the module devices, and then the device stacking layer, the metal wiring layer, the insulating layer and the metal substrate are wrapped on the whole outer side of the device stacking layer, the metal wiring layer, the insulating layer and the metal substrate through the plastic package body. The embodiment of the utility model provides a packaging structure of gaN switching power supply module, through with gaN switching power supply module integration to metal substrate, the heat dissipation problem in the gaN semiconductor switch tube device is used has been solved, when the product application is done to the terminal customer, can directly use, supplementary heat dissipation treatment part has been reduced, thereby the waste of material has been reduced, and for the terminal customer provides convenient to use, and then the applied scene of gaN semiconductor switch tube device has been enlarged, make gaN semiconductor switch tube device use easier, the development of the semiconductor of the third generation has been promoted.

Drawings

Fig. 1 is a schematic structural diagram of a package structure of a GaN switching power supply module according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of another package structure of a GaN switching power module according to a first embodiment of the present invention;

fig. 3 is a schematic structural diagram of another package structure of a GaN switching power module according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Furthermore, the terms "first," "second," and the like may be used herein to describe various orientations, actions, steps, elements, or the like, but the orientations, actions, steps, or elements are not limited by these terms. These terms are only used to distinguish one direction, action, step or element from another direction, action, step or element. For example, a first opening may be referred to as a second opening, and similarly, a second opening may be referred to as a first opening, without departing from the scope of the present application. Both the first and second openings are openings, but they are not the same opening. The terms "first", "second", etc. should not be construed to indicate or imply relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

Example one

Fig. 1 is the embodiment of the present invention provides a structural schematic diagram of a package structure of a GaN switching power supply module, which is applicable to the case of heat dissipation in the working process of the GaN switching power supply module. As shown in fig. 1, the package structure includes: the device comprises a device stacking layer 100, a metal wiring layer 200, an insulating layer 300, a metal substrate 400 and a plastic package body 500 which are sequentially stacked; the device stacking layer 100 is used for stacking module devices of a GaN switching power supply module; the metal wiring layer 200 is used for providing electrical connection for the module device; the plastic package body 500 is wrapped on the entire outer side of the device stack layer 100, the metal wiring layer 200, the insulating layer 300 and the metal substrate 400.

Optionally, the module device includes a GaN semiconductor switching tube, a power controller, a resistor, a capacitor, a diode, a triode, and the like, where the power controller may be a power management chip (such as a PFC, an ACF, a QR, an LLC, a half bridge, a full bridge, and the like), that is, a control chip of a power product, and the specific connection relationship of these module devices may refer to an existing arbitrary GaN switching power module. Further optionally, the GaN semiconductor switch tube and the power supply controller are sealed, and may be mounted in a sealed structure, where the sealed structure encapsulates the GaN semiconductor switch tube and the power supply management controller in an integrated chip, thereby improving the integration of the module. In the package structure provided in this embodiment, all module devices may be stacked on the device stack layer 100 and may be placed according to the connection relationship of the module devices. Further, the module device can be integrated on the metal substrate 400 to solve the heat dissipation problem of the GaN semiconductor switch device, specifically, the connection wires can be arranged through the metal wiring layer 200 according to the connection relationship of the module device, and the module device is soldered to the corresponding position on the metal wiring layer 200, so that the electrical connection of the module device is realized, and then the short circuit is avoided through the insulating layer 300, and finally the integration of the module device on the metal substrate 400 is realized. On the basis of the above structure, the plastic package body 500 may be injected outside the whole of the device stack layer 100, the metal wiring layer 200, the insulating layer 300, and the metal substrate 400 to complete plastic package, so as to fix the module.

On the basis of the above technical solution, optionally, as shown in fig. 2 and fig. 3, the package structure further includes: and the fixed pin 600 is used for leading out a functional input contact and a functional output contact of the GaN switching power supply module, and the fixed pin 600 is led out from the plastic package body 500. Specifically, the fixing pin 600 is used for leading out from the inside of the plastic package body 500 to the outside, and is connected with the module device 101 in the inside, so that a relevant circuit can be connected to the fixing pin 600 to provide a driving signal or a control signal for the GaN switch power module, or output of the GaN switch power module is realized, and specifically, a function input contact and a function output contact of the GaN switch power module can be led out, wherein the function input contact can include a driving voltage input contact, a working voltage input contact, a photocoupler control contact, a power ground contact and the like, and the function output contact can include a power voltage output contact and the like.

Further optionally, the metal substrate 400 includes a function lead-out solder joint, the fixing pin 600 is fixed to the function lead-out solder joint, specifically, the fixing pin 600 may be fixed to the function lead-out solder joint of the metal substrate 400 through a pin bracket and then soldered, and the function lead-out solder joint corresponding to the function input contact and the function output contact of the GaN switch power module is disposed on the metal substrate 400, so that the fixing pin 600 is more conveniently connected in the plastic package body 500.

Further optionally, the fixed pin 600 includes a driving voltage input pin, and the driving voltage input pin is directly connected to a driving voltage input connection point of the GaN switch power supply module, that is, pins except the driving voltage input pin in the fixed pin 600 may be connected to the functional lead-out solder joint, and the driving voltage input pin is directly connected to the driving voltage input connection point for soldering, and the functional lead-out solder joint corresponding to the driving voltage input pin may not be disposed on the metal substrate 400. The driving voltage input contact can be a drain electrode of the GaN semiconductor switch tube and is used for providing driving voltage for the GaN semiconductor switch tube.

Further optionally, the metal substrate 400 has a first opening, and the driving voltage input pin is connected to the driving voltage input contact through the first opening, that is, the metal substrate 400 may be hollowed to form the first opening, and openings may be disposed at corresponding positions of the metal wiring layer 200 and the insulating layer 300, so that the driving voltage input pin may be connected to the driving voltage input contact through each opening.

On the basis of the above technical solution, optionally, a second opening is formed in the metal substrate 400, a third opening and a fourth opening are respectively formed in the corresponding positions of the second opening of the metal wiring layer 200 and the insulating layer 300, the metal wiring layer 200 is short-circuited with the metal substrate 400 through the third opening and the fourth opening, and the metal substrate 400 is grounded. Specifically, holes may be formed in corresponding positions among the metal substrate 400, the metal wiring layer 200, and the insulating layer 300, the sizes of the holes may not be completely the same, and then the metal wiring layer 200 and the metal substrate 400 may be short-circuited by means of a tool such as a eyelet or a screw, specifically, a ground terminal of the metal wiring layer 200 and the metal substrate 400 may be short-circuited, and good connection is maintained, and meanwhile, the metal substrate 400 is guaranteed to be well grounded, so that a shielding grounding effect is achieved, and EMI suppression during high-frequency operation is achieved.

On the basis of the above technical solution, as shown in fig. 2, optionally, between the insulating layer 300 and the metal substrate 400, there are further included: graphene heat-conducting layer 700 to with the heat homodisperse that GaN switching power module produced, in order to realize better radiating effect.

The embodiment of the utility model provides a packaging structure of GaN switching power supply module, pile up layer, metal wiring layer, insulating layer and metal substrate including the device that stacks gradually the setting to and the plastic-sealed body. The device stacking layer is used for stacking module devices, the metal wiring layer is used for providing electrical connection for the module devices, and then the device stacking layer, the metal wiring layer, the insulating layer and the metal substrate are wrapped on the whole outer side of the device stacking layer, the metal wiring layer, the insulating layer and the metal substrate through the plastic package body. Through with the integration of gaN switching power supply module to metal substrate, the heat dissipation problem in the gaN semiconductor switch tube device is used has been solved, when terminal customer does the product application, can the direct use, the supplementary heat dissipation processing part has been reduced to reduce the waste of material, and provide convenient to use for terminal customer, and then enlarged the application scene of gaN semiconductor switch tube device, it is easier to make gaN semiconductor switch tube device use, promoted the development of third generation semiconductor.

It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.

Claims

1. The utility model provides a packaging structure of GaN switching power module which characterized in that includes: the device comprises a device stacking layer, a metal wiring layer, an insulating layer, a metal substrate and a plastic package body which are sequentially stacked; wherein,

2. The package structure of the GaN switching power module of claim 1, further comprising: and the fixed pin is used for leading out a function input contact and a function output contact of the GaN switch power supply module, and the fixed pin is led out from the inside of the plastic package.

3. The package structure of the GaN switching power supply module of claim 2, wherein the metal substrate includes a functional lead-out pad, and the fixing pin is fixed to the functional lead-out pad.

4. The package structure of the GaN switch power module of claim 2, wherein the fixed pin comprises a driving voltage input pin, and the driving voltage input pin is directly connected to the driving voltage input contact of the GaN switch power module.

5. The package structure of the GaN switching power supply module of claim 4, wherein the metal substrate has a first opening, and the driving voltage input pin is connected to the driving voltage input contact through the first opening.

6. The package structure of the GaN switching power supply module of claim 1, wherein the metal substrate has a second opening, the metal wiring layer and the insulating layer have a third opening and a fourth opening at corresponding positions of the second opening, the metal wiring layer is shorted with the metal substrate through the third opening and the fourth opening, and the metal substrate is grounded.

7. The package structure of the GaN switching power supply module of claim 6, wherein the metal wiring layer and the metal substrate are shorted by a keyhole or a screw.

8. The package structure of the GaN switching power supply module of claim 1, further comprising, between the insulating layer and the metal substrate: graphene heat conducting layer.

9. The package structure of the GaN switching power module of claim 1, wherein the module device comprises a GaN semiconductor switch, a power controller, a resistor, a capacitor, a diode, and a transistor.

10. The package structure of the GaN switching power module of claim 9, wherein the GaN semiconductor switch tube and the power controller are sealed.