CN217468402U - Packaging structure of power semiconductor module - Google Patents
Packaging structure of power semiconductor module Download PDFInfo
- Publication number
- CN217468402U CN217468402U CN202221393714.XU CN202221393714U CN217468402U CN 217468402 U CN217468402 U CN 217468402U CN 202221393714 U CN202221393714 U CN 202221393714U CN 217468402 U CN217468402 U CN 217468402U
- Authority
- CN
- China
- Prior art keywords
- pcb
- metal substrate
- power semiconductor
- wiring layer
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims description 8
- 230000017525 heat dissipation Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 3
- HHXNVASVVVNNDG-UHFFFAOYSA-N 1,2,3,4,5-pentachloro-6-(2,3,6-trichlorophenyl)benzene Chemical compound ClC1=CC=C(Cl)C(C=2C(=C(Cl)C(Cl)=C(Cl)C=2Cl)Cl)=C1Cl HHXNVASVVVNNDG-UHFFFAOYSA-N 0.000 description 17
- 238000010586 diagram Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The embodiment of the utility model discloses packaging structure of power semiconductor module. The packaging structure comprises: the device comprises a module device, a PCB (printed Circuit Board), a metal substrate, a device pin and a plastic package body; the module device comprises a power semiconductor and is arranged on one side of the PCB; the metal substrate is arranged on the other side of the PCB and is connected with a ground end on the PCB; the device pins are arranged on the PCB at one side of the module device and connected with the module device; the plastic package body wraps the module device, the PCB and the metal substrate, and the device pins are led out from the plastic package body. The embodiment of the utility model provides a packaging structure of power semiconductor module, at the power semiconductor during operation, can directly dispel the heat through the metal substrate of large size, fine solution power semiconductor's the heat dissipation problem, and have advantages such as simple process, low cost and be convenient for integration.
Description
Technical Field
The embodiment of the utility model provides a relate to switching power supply technical field, especially relate to a packaging structure of power semiconductor module.
Background
When the power semiconductor works, the body temperature rises, and heat dissipation needs to be additionally carried out, the conventional scheme is that a heat dissipation fin is additionally arranged on the power semiconductor, or auxiliary heat dissipation such as glue pouring or heat dissipation silica gel is added through multiple layers of PCBs, so that the temperature of the power semiconductor is reduced, and the temperature of the power semiconductor is controlled within a bearable range. However, the heat dissipation of the heat dissipation plate needs to be fixed with the semiconductor through screws, the process is complex, rapid heat dissipation cannot be achieved, high integration cannot be achieved, and the process is complex and the cost is relatively high due to the adoption of auxiliary heat dissipation methods such as glue filling.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a packaging structure of power semiconductor module to guarantee that power semiconductor effectively dispels the heat, and simplify technology, reduce cost.
The embodiment of the utility model provides a packaging structure of power semiconductor module, this packaging structure includes: the device comprises a module device, a PCB (printed Circuit Board), a metal substrate, a device pin and a plastic package body; wherein,
the module device comprises a power semiconductor and is arranged on one side of the PCB;
the metal substrate is arranged on the other side of the PCB and is connected with a ground end on the PCB;
the device pins are arranged on the PCB at one side of the module device and connected with the module device;
the plastic package body wraps the module device, the PCB and the metal substrate, and the device pins are led out from the plastic package body.
Optionally, the PCB is a PCB with more than 2 layers.
Optionally, the PCB includes: a substrate, a first wiring layer and a second wiring layer; wherein,
the first wiring layer is positioned on one side of the module device on the substrate and used for realizing the electrical connection of the module device;
the second wiring layer is located on one side of the metal substrate on the base material and is used for being connected with the metal substrate.
Optionally, the ground terminal is located on one side of the module device of the substrate and is connected to the second wiring layer through a via hole.
Optionally, a pad is disposed in the second wiring layer, and is connected to the metal substrate through the pad.
Optionally, the metal substrate includes a metal substrate wiring layer and a metal substrate material layer, and is connected to the second wiring layer through the metal substrate wiring layer.
The embodiment of the utility model provides a packaging structure of power semiconductor module, including the module device, the PCB board, metal substrate, device pin and plastic-sealed body, module device wherein includes power semiconductor, and set up in one side of PCB board, metal substrate sets up in the opposite side of PCB board, and be connected with the ground on the PCB board, the device pin sets up on the PCB board of module device one side, and is connected with the module device, the plastic-sealed body parcel is in the module device, the whole outside of PCB board and metal substrate, and the device pin is drawn forth from the plastic-sealed body. The embodiment of the utility model provides a packaging structure of power semiconductor module, at the power semiconductor during operation, can directly dispel the heat through the metal substrate of large size, fine solution power semiconductor's the heat dissipation problem, and have advantages such as simple process, low cost and be convenient for integration.
Drawings
Fig. 1 is a schematic structural diagram of a package structure of a power semiconductor module according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another power semiconductor module package structure according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another power semiconductor module package structure according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Furthermore, the terms "first," "second," and the like may be used herein to describe various orientations, actions, steps, elements, or the like, but the orientations, actions, steps, or elements are not limited by these terms. These terms are only used to distinguish one direction, action, step or element from another direction, action, step or element. For example, a first wiring layer may be referred to as a second wiring layer, and similarly, a second wiring layer may be referred to as a first wiring layer, without departing from the scope of the present application. The first and second wiring layers are both wiring layers, but they are not the same wiring layer. The terms "first", "second", etc. are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Example one
Fig. 1 is a schematic structural diagram of a package structure of a power semiconductor module according to an embodiment of the present invention, which is applicable to a case of heat dissipation in a power semiconductor working process. As shown in fig. 1, the package structure includes: the module device 100, the PCB 200, the metal substrate 300, the device pins 400 and the plastic package body 500; wherein the module device 100 includes a power semiconductor, and is disposed on one side of the PCB board 200; the metal substrate 300 is disposed on the other side of the PCB 200 and connected to a ground terminal on the PCB 200; the device pin 400 is disposed on the PCB 200 at one side of the module device 100 and connected to the module device 100; the plastic package body 500 is wrapped on the whole outer sides of the module device 100, the PCB 200 and the metal substrate 300, and the device pins 400 are led out from the plastic package body 500.
Specifically, the PCB 200 on one side of the module device 100 may include a wiring layer, i.e., a pattern capable of achieving electrical connection, so that the module device 100 may be soldered on the wiring layer to achieve electrical connection of the module device 100, where the module device 100 may specifically include a power semiconductor and a power semiconductor peripheral device, and the power semiconductor peripheral device may be electrically connected by soldering. The metal substrate 300 is disposed on the other side of the PCB 200 relative to the module device 100, a via hole may be formed in the PCB 200, and the via hole is grounded, and a ground terminal on the PCB 200, specifically, a ground terminal on the wiring layer, may be connected to the metal substrate 300 through the via hole, so as to directly dissipate heat through the metal substrate 300, on the other hand, the ground terminal on the PCB 200 may be further connected to an outer copper foil of the PCB 200 through the via hole to dissipate heat, and meanwhile, the ground terminal is grounded to be used as a shield, wherein the PCB 200 may be attached to the metal substrate 300 in any manner to transfer heat. On the basis of the above structure, the plastic package body 500 may be injected to the entire outer side of the module device 100, the PCB 200, and the metal substrate 300 to complete plastic package, so as to fix the module. The device pins 400 are used for leading out from the inside of the plastic package body 500 to the outside and connecting with the module device 100 inside, so that relevant circuits are accessed through the device pins 400 to provide driving signals or control signals for the power semiconductor module, or output of the power semiconductor module is realized, and the like, and particularly, the connection with the module device 100 can be realized through welding on the wiring layer.
Optionally, the PCB 200 is a PCB with more than 2 layers. Further optionally, as shown in fig. 2, the PCB board 200 includes: a substrate 201, a first wiring layer 202, and a second wiring layer 203; wherein, the first wiring layer 202 is located on one side of the module device 100 on the substrate 201, and is used for realizing the electrical connection of the module device 100; the second wiring layer 203 is located on the base material 201 on the side of the metal substrate 300, and is used for connecting with the metal substrate 300. Wherein the substrate 201 is a PCB insulation body material layer. Specifically, the PCB 200 may include a wiring layer on each of two sides, wherein a first wiring layer 202 is close to the module device 100 for electrically connecting the module device 100, and a second wiring layer 203 is close to the metal substrate 300 for electrically connecting the metal substrate 300.
Further optionally, the ground terminal is located on the side of the module device 100 of the substrate 201 and is connected to the second wiring layer 203 through a via, that is, the ground terminal on the first wiring layer 202 is connected to the second wiring layer 203 through a via, and finally is connected to the metal substrate 300.
Further optionally, pads are disposed in the second wiring layer 203, and are connected to the metal substrate 300 through the pads, specifically, the metal substrate 300 may be soldered to the second wiring layer 203 through the pads, so as to improve the stability of connection between the metal substrate 300 and the PCB 200.
Further optionally, the metal substrate 300 includes a metal substrate wiring layer 301 and a metal substrate material layer 302, and is connected to the second wiring layer 203 through the metal substrate wiring layer 301, that is, the metal substrate wiring layer 301 is closer to the second wiring layer 203 than the metal substrate material layer 302, and may be specifically welded to the metal substrate wiring layer 301 through a pad arranged in the second wiring layer 203, so that the connection between the metal substrate 300 and the PCB 200 is realized, and the connection stability may be further improved.
The embodiment of the utility model provides a packaging structure of power semiconductor module, including the module device, the PCB board, metal substrate, device pin and plastic-sealed body, module device wherein includes power semiconductor, and set up in one side of PCB board, metal substrate sets up in the opposite side of PCB board, and be connected with the ground on the PCB board, the device pin sets up on the PCB board of module device one side, and is connected with the module device, the plastic-sealed body parcel is in the module device, the whole outside of PCB board and metal substrate, and the device pin is drawn forth from the plastic-sealed body. When the power semiconductor works, the heat can be directly dissipated through the large metal substrate, the heat dissipation problem of the power semiconductor is well solved, and the power semiconductor heat dissipation device has the advantages of being simple in process, low in cost, convenient to integrate and the like.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (6)
1. A packaging structure of a power semiconductor module is characterized by comprising: the device comprises a module device, a PCB (printed Circuit Board), a metal substrate, a device pin and a plastic package body; wherein,
the module device comprises a power semiconductor and is arranged on one side of the PCB;
the metal substrate is arranged on the other side of the PCB and is connected with a ground end on the PCB;
the device pins are arranged on the PCB at one side of the module device and connected with the module device;
the plastic package body wraps the module device, the PCB and the metal substrate, and the device pins are led out from the plastic package body.
2. The package structure of a power semiconductor module according to claim 1, wherein the PCB is a 2-layer or more PCB.
3. The package structure of a power semiconductor module according to claim 2, wherein the PCB board comprises: a substrate, a first wiring layer and a second wiring layer; wherein,
the first wiring layer is positioned on one side of the module device on the substrate and used for realizing the electrical connection of the module device;
the second wiring layer is located on one side of the metal substrate on the base material and is used for being connected with the metal substrate.
4. The package structure of a power semiconductor module according to claim 3, wherein the ground terminal is located on the module device side of the substrate and is connected to the second wiring layer through a via.
5. The package structure of a power semiconductor module according to claim 3, wherein a pad is disposed in the second wiring layer and connected to the metal substrate through the pad.
6. The package structure of a power semiconductor module according to claim 3, wherein the metal substrate includes a metal substrate wiring layer and a metal substrate material layer, and is connected to the second wiring layer through the metal substrate wiring layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221393714.XU CN217468402U (en) | 2022-06-06 | 2022-06-06 | Packaging structure of power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221393714.XU CN217468402U (en) | 2022-06-06 | 2022-06-06 | Packaging structure of power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217468402U true CN217468402U (en) | 2022-09-20 |
Family
ID=83235781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221393714.XU Active CN217468402U (en) | 2022-06-06 | 2022-06-06 | Packaging structure of power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217468402U (en) |
-
2022
- 2022-06-06 CN CN202221393714.XU patent/CN217468402U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10593656B2 (en) | Three-dimensional package structure | |
| CN211879369U (en) | Chip packaging structure and electronic equipment | |
| US7595550B2 (en) | Flex-based circuit module | |
| US6054759A (en) | Semiconductor chip and package with heat dissipation | |
| JP3051011B2 (en) | Power module | |
| US7551455B2 (en) | Package structure | |
| JPH1174433A (en) | Semiconductor device | |
| CN102468249A (en) | Power package module and method for fabricating the same | |
| KR100281056B1 (en) | Semiconductor Device and Semiconductor Device Module | |
| JP3251323B2 (en) | Electronic circuit device | |
| JP3944369B2 (en) | Semiconductor integrated circuit module and method of using the same | |
| JP7472287B2 (en) | Electronic element, circuit board with electronic element, and electronic device | |
| CN1437233A (en) | Packaged semiconductor device and its forming method | |
| CN217468402U (en) | Packaging structure of power semiconductor module | |
| CN115775795A (en) | Intelligent power module and power conversion equipment | |
| CN214099627U (en) | Intelligent power module | |
| CN112490232A (en) | Intelligent power module and manufacturing method thereof | |
| JP2002118215A (en) | Semiconductor device | |
| CN217468405U (en) | Packaging structure of GaN switching power supply module | |
| CN218632025U (en) | Power module | |
| CN212967676U (en) | Heat dissipation chip and circuit board | |
| CN217363401U (en) | Ball grid array packaged power supply module | |
| CN219457612U (en) | Power tube structure and power supply | |
| CN217933772U (en) | Heat radiation structure of power semiconductor device and power semiconductor device | |
| CN221264064U (en) | Flexible circuit board and film flip chip packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |