CN113380734A - IGBT device with double-sided heat dissipation - Google Patents
IGBT device with double-sided heat dissipation Download PDFInfo
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- CN113380734A CN113380734A CN202110538081.0A CN202110538081A CN113380734A CN 113380734 A CN113380734 A CN 113380734A CN 202110538081 A CN202110538081 A CN 202110538081A CN 113380734 A CN113380734 A CN 113380734A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 45
- 238000007789 sealing Methods 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 238000002791 soaking Methods 0.000 claims description 9
- 239000004519 grease Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
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- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The application discloses IGBT device of two-sided heat dissipation. The method comprises the following steps: the IGBT module, first heat-conducting plate, the second heat-conducting plate, the heat dissipation shell, the IGBT module includes PCB and at least one IGBT unit, a side of PCB is provided with at least one IGBT unit, PCB's another side is connected to first heat-conducting plate, first heat-conducting plate is used for conducting PCB's heat, second heat-conducting plate contact each IGBT unit, the second heat-conducting plate is used for conducting the heat of each IGBT unit, heat dissipation shell contact first heat-conducting plate and second heat-conducting plate, the heat dissipation shell is used for conducting the heat of first heat-conducting plate and second heat-conducting plate, the heat dissipation shell is hollow structure, the heat dissipation shell is used for dispelling the heat through water-cooled mode. The heat-conducting plates are additionally arranged on the two side faces of the IGBT module and the heat-radiating shell is used for water-cooling heat radiation, so that heat generated by the IGBT module can be uniformly distributed, and the heat-radiating efficiency is improved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a double-sided radiating IGBT device.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a metal-oxide semiconductor field effect Transistor and a fast diode, has the characteristics of high switching speed, high input impedance, short reverse recovery time, good thermal stability, low on-state voltage, high voltage and the like, and is widely applied to the fields of wind energy, solar energy, rail transit, electric automobiles, smart grids, household appliance frequency conversion and the like. The packaging structure in the related technology has the phenomena of uneven heat dissipation and burning caused by heat accumulation of components.
Disclosure of Invention
The present application is directed to solving at least one of the problems in the prior art. Therefore, the application provides a double-sided radiating IGBT device, which can enable the heat dissipation of an IGBT chip to be more uniform and improve the heat dissipation efficiency.
According to the IGBT device of the first aspect of the embodiment of this application of two-sided heat dissipation, include: IGBT module, first heat-conducting plate, second heat-conducting plate, heat dissipation shell, the IGBT module includes PCB and at least one IGBT unit, a side of PCB is provided with at least one the IGBT unit, first heat-conducting plate is connected the another side of PCB, first heat-conducting plate is used for conducting PCB's heat, second heat-conducting plate contact each the IGBT unit, the second heat-conducting plate is used for conducting each the heat of IGBT unit, the heat dissipation shell is connected first heat-conducting plate with the second heat-conducting plate, the heat dissipation shell is used for conducting first heat-conducting plate with the heat of second heat-conducting plate, the heat dissipation shell is hollow structure, the heat dissipation shell is used for dispelling the heat through water-cooled mode.
According to the IGBT device with double-sided heat dissipation, the IGBT device at least has the following beneficial effects: the heat-conducting plates are additionally arranged on the two sides of the IGBT module and the heat-radiating shell is used for water-cooling heat radiation, so that heat generated by the IGBT module can be uniformly distributed, and the heat-radiating efficiency is improved.
According to some embodiments of the present application, the first and second thermally conductive plates are both VC soaking plates.
According to some embodiments of the present application, further comprising a sealing frame surrounding the IGBT module.
According to some embodiments of the present application, the sealing frame connects the first heat-conducting plate and the second heat-conducting plate by resin.
According to some embodiments of the present application, the first thermally conductive plate is connected to the PCB by a low temperature braze layer.
According to some embodiments of the present application, the second thermally conductive plate contacts each of the IGBT cells through a silicone grease layer.
According to some embodiments of the present application, each of the IGBT-cells comprises: the IGBT device comprises IGBT chips and diodes, wherein each IGBT chip and each diode are arranged on one side face of the PCB.
According to some embodiments of the present application, each of the IGBT cells is fixed with the PCB by resin.
According to some embodiments of the application, all of the IGBT cells are evenly distributed on one side of the PCB.
According to some embodiments of the present application, the heat-dissipating housing comprises: the shell comprises a first shell and a second shell, wherein the first shell and the second shell are connected through a connecting pipe.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The present application is further described with reference to the following figures and examples, in which:
fig. 1 is a schematic diagram of an IGBT device according to an embodiment of the present application;
FIG. 2 is a partial schematic view of an IGBT device according to an embodiment of the present application;
fig. 3 is a top view of the IGBT device of the embodiment of fig. 2;
fig. 4 is a side view of an IGBT device according to an embodiment of the present application.
Reference numerals:
the IGBT module 110, the first heat conduction plate 121, the second heat conduction plate 122, the heat dissipation case 130;
IGBT unit 111, sealing frame 140, first case 131, second case 132, and connection pipe 133;
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it is to be understood that the positional descriptions, such as the directions of up, down, front, rear, left, right, etc., referred to herein are based on the directions or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present application.
In the description of the present application, the meaning of a plurality is one or more, the meaning of a plurality is two or more, and the above, below, exceeding, etc. are understood as excluding the present number, and the above, below, within, etc. are understood as including the present number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present application, unless otherwise expressly limited, terms such as set, mounted, connected and the like should be construed broadly, and those skilled in the art can reasonably determine the specific meaning of the terms in the present application by combining the detailed contents of the technical solutions.
Some embodiments, referring to fig. 1 to 4, the present application proposes a double-sided heat dissipation IGBT device, including: the heat dissipation module comprises an IGBT module 110, a first heat conduction plate 121, a second heat conduction plate 122 and a heat dissipation shell 130, wherein the IGBT module 110 comprises a PCB and at least one IGBT unit 111, one side surface of the PCB is provided with at least one IGBT unit 111, the first heat conduction plate 121 is connected with the other side surface of the PCB, the first heat conduction plate 121 is used for conducting heat of the PCB, the second heat conduction plate 122 is in contact with each IGBT unit 111, the second heat conduction plate 122 is used for conducting heat of each IGBT unit 111, the heat dissipation shell 130 is connected with the first heat conduction plate 121 and the second heat conduction plate 122, the heat dissipation shell 130 is used for conducting heat of the first heat conduction plate 121 and the second heat conduction plate 122, the heat dissipation shell 130 is of a hollow structure, and the heat dissipation shell 130 is used for dissipating heat in a water-cooling mode.
The IGBT module 110 is a PCB provided with a plurality of IGBT units 111, and the plurality of IGBT units 111 are electrically connected by a printed circuit on the PCB to form a complete functional module. Printed circuit has been printed to PCB's the side of going up, and printed circuit is used for connecting a plurality of IGBT units 111, and IGBT unit 111 can paste on PCB through SMT paster technology, and all IGBT units 111 all set up the side of going up at PCB, and PCB's downside can not do the processing or for covering the copper face, can set up the heat conduction hole when covering the copper face, improves the heat transfer efficiency between the PCB both sides face. The lower side of the PCB is connected to a first heat conducting plate 121 for conducting heat generated by the IGBT unit 111 away from the lower side of the PCB.
Since the plurality of IGBT units 111 are connected to the PCB in the same manner and the top of the IGBT unit 111 is at the same level, the second heat conduction plate 122 is disposed to contact each IGBT unit 111, so that heat generated by the IGBT unit 111 can be conducted away from the upper side by the contact. First heat-conducting plate 121 and second heat-conducting plate 122 all pass through the resin with heat dissipation shell 130 and are connected, and heat dissipation shell 130 is hollow cavity structure, and hollow cavity is used for holding cooling solution, through set up water inlet 134 and delivery port 135 on heat dissipation shell 130, realizes the circulation of inside cooling solution, realizes the water-cooling for the radiating rate of IGBT device.
Set up the heat-conducting plate through the upper and lower both sides at IGBT module 110 for the heat that IGBT module 110 produced can not produce and pile up, and the distribution is more even, and the heat can be conducted for heat dissipation shell 130 from upper and lower both sides fast simultaneously, realizes two-sided heat dissipation, and heat dissipation shell 130 uses the water-cooled mode to accelerate rate of heat dissipation, reduces long-pending heat, prevents to influence the working property of device.
In some embodiments, the first thermal conductive plate 121 and the second thermal conductive plate 122 are both VC soaking plates. The heating surface of the VC soaking plate is connected with the IGBT module 110, and the radiating surface of the VC soaking plate is connected with the radiating shell 130. The VC soaking plate is a vacuum cavity with a fine structure on the inner wall, cooling liquid is arranged in the cavity, after the VC soaking plate is heated, the cooling liquid generates a vaporization phenomenon, a cooling medium can be filled in the whole cavity rapidly, the heat resistance of steam is low, so that the heat distribution of the VC soaking plate is uniform, when a gas-phase working medium contacts a cold area, the heat can be liquefied and released, the liquefied cooling liquid can return to a heat source under the capillary action of the fine structure to continuously absorb heat, and the whole thermal cycle is completed. The VC soaking plate adopts a two-dimensional plane heat conduction mode, has a high heat dissipation rate and can meet the heat dissipation requirement of a high-power IGBT device.
Some embodiments, further comprise a sealing frame 140, the sealing frame 140 surrounding the IGBT module 110. In order to improve the sealing performance of the IGBT device, a sealing frame 140 is disposed around the IGBT module 110, the shape of the sealing frame 140 is determined by the shape of the IGBT module 110, the sealing frame 140 is made of plastic material and is used to seal the IGBT module 110 between the first heat conducting plate 121 and the second heat conducting plate 122, and a hole (not shown in the figure) for corresponding input and output wires is reserved on the sealing frame 140.
In some embodiments, the sealing frame 140 connects the first heat-conductive plate 121 and the second heat-conductive plate 122 by resin. The sealing frame 140 is bonded with the heat conducting plate through resin, and the resin is cured to form a resin layer 141, so that the fastening degree of the connection of the sealing frame 140 and the heat conducting plate is enhanced. In some other embodiments, other adhesives such as epoxy glue may be used for the attachment.
In some embodiments, the first heat-conducting plate 121 is connected to the PCB by a low-temperature braze layer. In order to increase the heat transfer efficiency between the first heat conduction plate 121 and the PCB and reduce the contact thermal resistance, sufficient solder paste is applied on the PCB, the solder paste is a copper-containing solder paste, the thickness is several tens of micrometers, the corresponding low-temperature reflow soldering temperature is 170 ℃, a low-temperature copper solder layer is formed by soldering, and the heat transfer efficiency is improved while the first heat conduction plate 121 and the PCB are fixed.
In some embodiments, the second heat conductive plate 122 contacts each IGBT cell 111 through a silicone grease layer. The silicone grease has good heat conduction, temperature resistance and insulation performance, is stable in chemical property, cannot affect a contacted chip when in use, and eliminates air gaps between contact surfaces of the second heat conduction plate 122 and the IGBT unit 111 by filling the silicone grease layer between the contact surfaces, so that heat resistance is reduced, and heat circulation is increased.
In some embodiments, each IGBT cell 111 includes: IGBT chips and diodes, each IGBT chip and each diode set up in a side of PCB. The diode can be a fast recovery diode, and the loss of the switching state of the IGBT device can be reduced through the combination of the IGBT chip and the fast recovery diode.
In some embodiments, each IGBT cell 111 is fixed to the PCB by resin. By sealing the IGBT units 111 on the PCB using resin, the waterproof performance of each IGBT unit 111 is increased, the fastening degree of the connection of the IGBT unit 111 and the PCB is fixedly enhanced, the top of the IGBT unit 111 needs to be exposed when the IGBT unit 111 is fixed using resin, and the height of resin cannot be higher than that of the IGBT unit 111, preventing the IGBT unit 111 from contacting the second heat conduction plate 122.
In some embodiments, all IGBT cells 111 are evenly distributed on one side of the PCB. In order to disperse and distribute the heat generated by the IGBT units 111 on the PCB, the IGBT units 111 are uniformly distributed on the PCB at intervals, so that the heat generated by the IGBT units 111 is more uniformly distributed on the PCB. In some other embodiments, the IGBT cells 111 may also be arranged unevenly according to design, in case of lower power consumption and less heat generation.
In some embodiments, the heat dissipation housing 130 includes: the first housing 131 and the second housing 132 are connected by a connection pipe 133 between the first housing 131 and the second housing 132. The heat dissipation housing 130 is formed in a separate type, the area of each housing is the same as that of the heat conduction plate, a water outlet 135 is formed in the first housing 131, and a water inlet 134 is formed in the second housing 132 for circulating cooling water with the outside. The connecting pipe 133 is the rubber material, and its quantity can set up wantonly according to discharge, through setting up flexible connecting pipe 133 and discrete heat dissipation shell 130, the heat dissipation shell 130 of being convenient for is adjusted according to the whole thickness of IGBT device, applicable in the IGBT device of multiple thickness. In some other embodiments, the heat dissipation housing 130 may be configured as an integral structure, integrally wrapping the first heat conduction plate 121 and the second heat conduction plate 122, or the connection pipe 133 may be configured as a rigid pipe, etc., to achieve the same technical effect.
In the description of the present application, reference to the description of the terms "some embodiments," "examples," or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The embodiments of the present application have been described in detail with reference to the drawings, but the present application is not limited to the embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present application. Furthermore, the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
Claims (10)
1. Double-sided radiating IGBT device, its characterized in that includes:
the IGBT module comprises a PCB and at least one IGBT unit, and at least one IGBT unit is arranged on one side surface of the PCB;
the first heat conducting plate is connected with the other side face of the PCB and used for conducting heat of the PCB;
a second heat conducting plate in contact with each of the IGBT cells, the second heat conducting plate for conducting heat from each of the IGBT cells;
the heat dissipation shell, the heat dissipation shell is connected first heat-conducting plate with the second heat-conducting plate, the heat dissipation shell is used for conducting first heat-conducting plate with the heat of second heat-conducting plate, the heat dissipation shell is hollow structure, the heat dissipation shell is used for dispelling the heat through water-cooled mode.
2. The double-sided heatsink IGBT device of claim 1, wherein the first and second thermally conductive plates are VC soaking plates.
3. The double-sided heat dissipating IGBT device according to claim 1, further comprising a sealing frame surrounding the IGBT module.
4. The double-sided heat dissipating IGBT device according to claim 3, wherein the sealing frame connects the first heat conductive plate and the second heat conductive plate by resin.
5. The double-sided heatsink IGBT device of claim 1, wherein the first thermally conductive plate is connected to the PCB by a low temperature braze layer.
6. The double-sided heatsink IGBT device of claim 1, wherein the second thermally conductive plate contacts each of the IGBT cells through a silicone grease layer.
7. The double-sided heat dissipating IGBT device according to claim 1, wherein each of the IGBT cells comprises: the IGBT device comprises IGBT chips and diodes, wherein each IGBT chip and each diode are arranged on one side face of the PCB.
8. The double-sided heat dissipating IGBT device according to claim 1, wherein each of the IGBT cells is fixed to the PCB by resin.
9. The double-sided heat dissipating IGBT device of claim 1, wherein all of the IGBT cells are evenly distributed on one side of the PCB.
10. The double-sided heat dissipating IGBT device according to claim 1, wherein the heat dissipating housing comprises: the shell comprises a first shell and a second shell, wherein the first shell and the second shell are connected through a connecting pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110538081.0A CN113380734A (en) | 2021-05-18 | 2021-05-18 | IGBT device with double-sided heat dissipation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110538081.0A CN113380734A (en) | 2021-05-18 | 2021-05-18 | IGBT device with double-sided heat dissipation |
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| Publication Number | Publication Date |
|---|---|
| CN113380734A true CN113380734A (en) | 2021-09-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110538081.0A Pending CN113380734A (en) | 2021-05-18 | 2021-05-18 | IGBT device with double-sided heat dissipation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117334664A (en) * | 2023-09-28 | 2024-01-02 | 海信家电集团股份有限公司 | Intelligent power module and electronic equipment |
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| JP2014007209A (en) * | 2012-06-22 | 2014-01-16 | Hitachi Automotive Systems Ltd | Semiconductor device and method of manufacturing the same |
| US20170117394A1 (en) * | 2015-10-27 | 2017-04-27 | Infineon Technologies Ag | Bipolar transistor with superjunction structure |
| CN108233725A (en) * | 2016-12-09 | 2018-06-29 | 中车永济电机有限公司 | Traction power module |
| CN108616219A (en) * | 2016-12-09 | 2018-10-02 | 中车永济电机有限公司 | Four-quadrant power module |
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2021
- 2021-05-18 CN CN202110538081.0A patent/CN113380734A/en active Pending
Patent Citations (7)
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|---|---|---|---|---|
| US20070062674A1 (en) * | 2005-03-18 | 2007-03-22 | Mitsubishi Electric Corporation | Cooling structure, heatsink and cooling method of heat generator |
| US20120087095A1 (en) * | 2009-04-28 | 2012-04-12 | Hitachi Automotive Systems, Ltd. | Power Module and Power Conversion Device |
| JP2011228430A (en) * | 2010-04-19 | 2011-11-10 | Toyota Motor Corp | Semiconductor module cooling device |
| JP2014007209A (en) * | 2012-06-22 | 2014-01-16 | Hitachi Automotive Systems Ltd | Semiconductor device and method of manufacturing the same |
| US20170117394A1 (en) * | 2015-10-27 | 2017-04-27 | Infineon Technologies Ag | Bipolar transistor with superjunction structure |
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Application publication date: 20210910 |