CN102723327B - Novel rectifier bridge for soybean milk maker - Google Patents

Novel rectifier bridge for soybean milk maker Download PDF

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Publication number
CN102723327B
CN102723327B CN201210196578.XA CN201210196578A CN102723327B CN 102723327 B CN102723327 B CN 102723327B CN 201210196578 A CN201210196578 A CN 201210196578A CN 102723327 B CN102723327 B CN 102723327B
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China
Prior art keywords
copper base
diode chip
glass passivated
package body
passivated diode
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CN201210196578.XA
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CN102723327A (en
Inventor
徐海洪
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Guangdong Ruisong Electronic Technology Co ltd
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FOSHAN SHUNDE DISTRICT RUISONG ELECTRONIC INDUSTRIAL CO LTD
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Rectifiers (AREA)

Abstract

The invention relates to a novel rectifier bridge for a soybean milk maker. The novel rectifier bridge comprises an insulated encapsulation shell, four terminal pins, and four unidirectional conductive chips. One end of each terminal pin extends into the insulated encapsulation shell and is connected with a copper substrate. The copper substrates and the unidirectional conductive chips are encapsulated in the insulated encapsulation shell. The copper substrates are separated from one another. The four unidirectional conductive chips are glass passivated diode chips. Each glass passivated diode chip is provided with electrodes at the upper end and the lower end. The area of the lower end electrode is larger that that of the upper end electrode. The glass passivated diode chips are connected with the copper substrates through the lower end faces of the glass passivated diode chips. The novel rectifier bridge for the soybean milk maker has the advantages that structure is simple and reasonable, size is small, heat radiation is fine, temperature is even, operation is stable and reliable, surge current through capacity is high (surge current of 10A RBU product can reach 275A), impact resistance capacity is high (breakdown voltage can reach 1200V) and the like.

Description

A kind of Novel rectifier bridge for soybean milk maker
Technical field
The present invention relates to a kind of rectifier bridge, be mainly used in the Novel rectifier bridge for soybean milk maker of (also can be that other adopts the food cooking machine of DC motor Driver) in soy bean milk making machine, function is for become interchange into direct current.
Background technology
At present, rectifier bridge is because of its reliable operation, easy for installation and be widely used in electric equipment products.Existing rectifier bridge contains electric current from 0.5A to 1000A, and voltage is from 50V to 1600V, and it comprises the series such as GBJ, GBU, GBL, GBPC, KBJ, KBU, KBL, KBP, DIP.
Along with the progress of product technology, consider energy-saving and environmental protection, controllability, soy bean milk making machine starts progressively to adopt converter technique to replace fixed technology frequently, motor is changed, the technological innovation of realization reduction energy resource consumption, achieve effective control, lifting Power Saving Class and product up-gradation to direct current machine from alternating current machine.The use of direct current machine relates to and common 220V interchange is become direct current problem, and existing rectifier bridge uses and faces a lot of realistic problem in soy bean milk making machine.
Problem one, soy bean milk making machine inner space is limited, can not place the rectifier bridge that overall dimensions are larger, is also based on same reason, rectifier bridge cannot outer radiation fin or air blast cooling measure cooling, common rectifier bridge heat dispersion cannot reach requirement.
Problem two, soy bean milk making machine direct current machine starting up electric current is large, and impact serious, the impact resistance of common rectifier bridge cannot reach requirement.
Problem three, when soy bean milk making machine abnormal work, locked rotor current is large, and common rectifier bridge moment antisurge handling capacity cannot reach requirement.
Problem four, for realizing one or several requirement above, need the rectifier bridge that external form is very large, soy bean milk making machine inner space cannot reach installation requirement.
Summary of the invention
The object of the invention is to the deficiency overcoming the existence of above-mentioned prior art, and provide the Novel rectifier bridge for soybean milk maker that one is simple and reasonable, volume is little, heat radiation is good, homogeneous temperature, working stability are reliable, have high surge current handling capacity (10A RBU product surge current reaches 275A) and high impact-resistance (puncture voltage reaches 1200V), to overcome the deficiencies in the prior art.
The object of the present invention is achieved like this.
A kind of Novel rectifier bridge for soybean milk maker, comprise insulating package body, four terminal pins and four unilateal conduction chips, one end of each terminal pin to be stretched in insulating package body and is connected with a copper base respectively, copper base and unilateal conduction chip package, in insulating package body, are spaced from each other between each copper base; It is characterized in that: described four unilateal conduction chips are glass passivated diode chip, the two ends up and down of glass passivated diode chip are electrode, its lower end electrode surface area is greater than upper end electrode surface area, and glass passivated diode chip is connected with copper base by its lower surface; Copper base is provided with four, in insulating package body, corresponding four copper bases are provided with four independently chambers respectively, wherein, first copper base is positioned at insulating package body top, wherein subordinate side depression, second copper base is arranged on the recess of the first copper base, and the 3rd bronze medal base and the 4th copper base lay respectively at the left and right sides below the second copper base; Four terminal pins are respectively the first interchange input lead pin, second and exchange input lead pin, the first direct current output lead pin and the second direct current output lead pin, first, second exchanges input lead pin and is connected with the left end of the first copper base and the second copper base right-hand member respectively, and first, second direct current output lead pin is between first, second interchange input lead pin and be connected with the 3rd, the 4th copper base respectively; First glass passivated diode chip and the second glass passivated diode chip are connected to the first copper base two ends by its lower surface, and the upper surface of first, second glass passivated diode chip is electrically connected respectively by brace and the 3rd, the 4th copper base; 3rd glass passivated diode chip and the 4th glass passivated diode chip are connected on the 3rd, the 4th copper base by its lower surface, and the upper surface of the 3rd, the 4th glass passivated diode chip is electrically connected respectively by brace and the second copper base.
Object of the present invention can also adopt following technical measures to solve.
As scheme more specifically, described insulating package body is rectangular-shaped, and its length a is 19.7mm-20.3mm, and width b is 12.3mm-12.9mm, and thickness h is 3.3mm-3.7mm.
Described each terminal pin is arranged in a linear and is arranged on insulating package body side, and adjacent two terminal pin centre distances are c is 4.4mm-4.8mm, and the terminal pin length d stretched out outside insulating package body is 9.5mm-10.5mm.
Beneficial effect of the present invention is as follows.
1, symmetrical configuration, chip position distribution rationally, thus makes the radiating copper substrate area of each chip evenly and makes full use of, and is conducive to 4 chip heatings evenly, effectively reduces chip operating temperature.
2, by the redesign of this structure, brace consistent size, thus be convenient to assembling, and also chip polarity is towards unanimously, thus can unify to weld, be conducive to raising efficiency of assembling.
3, this structure redesigns rear chip is all that large table top is downward, effectively increase bonding area and area of dissipation, the heat produced when being conducive to chip operation is dispersed on copper base rapidly, thus effectively reduces product work temperature, substantially prolongs the working life of rectifier bridge.
4, this structure make use of effective copper base area to greatest extent, is conducive to reducing chip P/N junction temperature.Reduce the operating power consumption of rectifier bridge, reduce the energy loss of operation, improve energy conversion efficiency.At present, the chip forward voltage that common rectifier bridge uses is generally between 1.0V-1.10V, and rectifier bridge operating power consumption is 20-22 watt.RBU rectifier bridge adopts forward voltage at 0.9V-0.92V chip, and operating power consumption is 18-18.5 watt, reduces by 10% than normal condition, working temperature when effective reduction product work, reduces energy loss, improves energy conversion efficiency, promote Power Saving Class, strengthen product reliability.
5, Novel rectifier bridge for soybean milk maker (being defined as RBU series rectifier bridge), this product chooses the GPP chip adopting PLCVD manufacture technics, this technique is generally applied to ic core blade technolgy, adopt Double side diffusion technology, chip design adopts mesa etch+SIPOS protection+silicon nitride protection+grooved glass passivating technique, P/N is rationally set and ties base width, thus reduce surface field impact to greatest extent, promote puncture voltage and surge handling capacity, and there is good high temperature stability performance, guarantee that product still has good overload current handling capacity when motor rotation blockage current anomaly increases.
6, RBU series rectifier bridge product shape is the thick 3.50MM of the wide 12.60MM* of long 20.0MM*, and volume is only equivalent to 30% of 50%, KBU product of 60%, KBJ product of 40%, GBU product of GBJ product.Small size is designed with the size being beneficial to and reducing rectifier bridge and take up room in soy bean milk making machine, solves the difficult design because soy bean milk making machine control circuit limited space causes, and reduces device layout difficulty.
7, the pin-pitch of RBU series rectifier bridge product is designed to 4.60MM, reduces 2.90MM, reduce 0.50MM than GBU, KBU product 5.10MM than GBJ, KBJ product 7.50MM.Compact pin-pitch is being guaranteed under dielectric strength prerequisite, effectively reduces the design difficulty of soy bean milk making machine wiring board and reduces installing space size, reducing device layout difficulty.
8, the object of this RBU series rectifier bridge product is to solve rectifier bridge in soy bean milk making machine and installs external form limited space, also air blast cooling efficiently radiates heat under heat dissipation environment harsh conditions and long-term stable operation cannot be caused because heat abstractor cannot be increased during work, in motor start-up procedure, current/voltage impacts excessive, when in machine operation process, abnormal conditions occur, locked rotor current such as sharply to rise at the technical difficulty, improving the stability of soy bean milk making machine when long-term work and reliability, helping soy bean milk making machine to realize upgrading from determining effective conversion of frequency to frequency conversion.
Accompanying drawing explanation
Fig. 1 is the main TV structure schematic diagram of one embodiment of the invention.
Fig. 2 is the left TV structure schematic diagram of Fig. 1.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
As depicted in figs. 1 and 2, this Novel rectifier bridge for soybean milk maker, comprise insulating package body 1, four terminal pins and four unilateal conduction chips, one end of each terminal pin to be stretched in insulating package body 1 and is connected with a copper base respectively, copper base and unilateal conduction chip package, in insulating package body 1, are spaced from each other between each copper base.Described four unilateal conduction chips are glass passivated diode chip, and the two ends up and down of glass passivated diode chip are electrode, and its lower end electrode surface area is greater than upper end electrode surface area, and glass passivated diode chip is connected with copper base by its lower surface.
Copper base is provided with four, in insulating package body 1, corresponding four copper bases are provided with four independently chambers respectively, wherein, first copper base 41 is positioned at insulating package body 1 top, wherein subordinate side depression, second copper base 42 is arranged on the recess of the first copper base 41, and the 3rd bronze medal base 43 and the 4th copper base 44 lay respectively at the left and right sides below the second copper base 42.
Four terminal pins are respectively the first interchange input lead pin 51, second and exchange input lead pin 52, first direct current output lead pin 53 and the second direct current output lead pin 54, first, second exchanges input lead pin and is connected with the left end of the first copper base 41 and the second copper base 42 right-hand member respectively, and first, second direct current output lead pin is between first, second interchange input lead pin and be connected with the 3rd, the 4th copper base respectively.
First glass passivated diode chip 21 and the second glass passivated diode chip 22 are connected to the first copper base 41 two ends by its lower surface, and the upper surface of first, second glass passivated diode chip is electrically connected respectively by brace 3 and the 3rd, the 4th copper base; 3rd glass passivated diode chip 23 and the 4th glass passivated diode chip 24 are connected on the 3rd, the 4th copper base by its lower surface, and the upper surface of the 3rd, the 4th glass passivated diode chip is electrically connected respectively by brace 3 and the second copper base 42.
Described insulating package body 1 is in rectangular-shaped, and its length a is 19.7mm-20.3mm, and width b is 12.3mm-12.9mm, and thickness h is 3.3mm-3.7mm.
Described each terminal pin is arranged in a linear and is arranged on insulating package body 1 side, and adjacent two terminal pin centre distances are c is 4.4mm-4.8mm, and the terminal pin length d stretched out outside insulating package body 1 is 9.5mm-10.5mm.

Claims (1)

1. a Novel rectifier bridge for soybean milk maker, comprise insulating package body (1), four terminal pins and four unilateal conduction chips, one end of each terminal pin to be stretched in insulating package body (1) and is connected with a copper base respectively, copper base and unilateal conduction chip package, in insulating package body (1), are spaced from each other between each copper base; It is characterized in that: described four unilateal conduction chips are glass passivated diode chip, the two ends up and down of glass passivated diode chip are electrode, its lower end electrode surface area is greater than upper end electrode surface area, and glass passivated diode chip is connected with copper base by its lower surface; Copper base is provided with four, in insulating package body (1), corresponding four copper bases are provided with four independently chambers respectively, wherein, first copper base (41) is positioned at insulating package body (1) top, wherein subordinate side depression, second copper base (42) is arranged on the recess of the first copper base (41), and the 3rd bronze medal base (43) and the 4th copper base (44) lay respectively at the left and right sides of the second copper base (42) below; Four terminal pins are respectively the first interchange input lead pin (51), second and exchange input lead pin (52), the first direct current output lead pin (53) and the second direct current output lead pin (54), first, second exchanges input lead pin and is connected with the left end of the first copper base (41) and the second copper base (42) right-hand member respectively, and first, second direct current output lead pin is between first, second interchange input lead pin and be connected with the 3rd, the 4th copper base respectively; First glass passivated diode chip (21) and the second glass passivated diode chip (22) are connected to the first copper base (41) two ends by its lower surface, and the upper surface of first, second glass passivated diode chip is electrically connected respectively by brace (3) and the 3rd, the 4th copper base; 3rd glass passivated diode chip (23) and the 4th glass passivated diode chip (24) are connected on the 3rd, the 4th copper base by its lower surface, and the upper surface of the 3rd, the 4th glass passivated diode chip is electrically connected respectively by brace (3) and the second copper base (42);
Described insulating package body (1) is in rectangular-shaped, and its length a is 19.7mm-20.3mm, and width b is 12.3mm-12.9mm, and thickness h is 3.3mm-3.7mm;
Described each terminal pin is arranged in a linear and is arranged on insulating package body (1) side, and adjacent two terminal pin centre distances are c is 4.4mm-4.8mm, and it is 9.5mm-10.5mm that terminal pin stretches out insulating package body (1) length d outward.
CN201210196578.XA 2012-06-15 2012-06-15 Novel rectifier bridge for soybean milk maker Active CN102723327B (en)

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Application Number Priority Date Filing Date Title
CN201210196578.XA CN102723327B (en) 2012-06-15 2012-06-15 Novel rectifier bridge for soybean milk maker

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CN102723327B true CN102723327B (en) 2015-05-13

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105024562B (en) * 2015-07-23 2018-08-10 佛山市顺德区瑞淞电子实业有限公司 A kind of single-phase three-phase compatibility rectifier bridge stack of straight cutting
CN106229303A (en) * 2016-08-31 2016-12-14 佛山市顺德区瑞淞电子实业有限公司 A kind of rectifier bridge of integrated current sampling

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2901580Y (en) * 2006-02-24 2007-05-16 梁锦荣 Single row direct insert full wave rectifier bridge stack
CN201075387Y (en) * 2007-07-09 2008-06-18 扬州扬杰电子科技有限公司 Patch type power diode
CN201805359U (en) * 2010-05-11 2011-04-20 扬州扬杰电子科技有限公司 Encapsulated photovoltaic rectifier bridge stack

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2901580Y (en) * 2006-02-24 2007-05-16 梁锦荣 Single row direct insert full wave rectifier bridge stack
CN201075387Y (en) * 2007-07-09 2008-06-18 扬州扬杰电子科技有限公司 Patch type power diode
CN201805359U (en) * 2010-05-11 2011-04-20 扬州扬杰电子科技有限公司 Encapsulated photovoltaic rectifier bridge stack

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Effective date of registration: 20221111

Address after: 527499 plot 01-03-03, North Park, Xincheng Industrial Park, Xinxing County, Yunfu City, Guangdong Province

Patentee after: Guangdong Ruisong Electronic Technology Co.,Ltd.

Address before: 528300 kunzhou Industrial Zone, Beijiao Town, Shunde District, Foshan City, Guangdong Province

Patentee before: RULER ELECTRONIC CO.,LTD.