CN209150091U - A kind of chip diode with radiator structure - Google Patents
A kind of chip diode with radiator structure Download PDFInfo
- Publication number
- CN209150091U CN209150091U CN201822221414.3U CN201822221414U CN209150091U CN 209150091 U CN209150091 U CN 209150091U CN 201822221414 U CN201822221414 U CN 201822221414U CN 209150091 U CN209150091 U CN 209150091U
- Authority
- CN
- China
- Prior art keywords
- conductive sheet
- backlight unit
- diode
- radiator structure
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000003466 welding Methods 0.000 claims abstract description 19
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 17
- 239000004519 grease Substances 0.000 claims abstract description 17
- 239000010959 steel Substances 0.000 claims abstract description 17
- 230000017525 heat dissipation Effects 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000005439 thermosphere Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
Abstract
The utility model system provides a kind of chip diode with radiator structure, including the first conductive sheet and the second conductive sheet, diode chip for backlight unit is connected between first conductive sheet and the second conductive sheet, first conductive sheet is connected by the bottom end of the first welding layer and diode chip for backlight unit, second conductive sheet is connected by the top of the second welding layer and diode chip for backlight unit, and insulation-encapsulated body is surrounded by outside diode chip for backlight unit；First conductive sheet is equipped with radiator structure far from the side of diode chip for backlight unit, second conductive sheet also is provided with radiator structure far from the side of diode chip for backlight unit, radiator structure includes thermal grease layer, thermal grease layer is connected with steel mesh heat dissipating layer far from the side of diode chip for backlight unit, and two thermal grease layers are connect with the first conductive sheet and the second conductive sheet respectively.The utility model has good heat dissipation performance, effectively heat can be avoided to accumulate in diode chip for backlight unit, can effectively ensure the working performance of diode entirety.
Description
Technical field
The utility model relates to chip diodes, specifically disclose a kind of chip diode with radiator structure.
Background technique
Diode is a kind of electronic device that can unidirectionally conduct electric current, is equipped with PN junction inside diode, the two of PN junction
End is equipped with lead terminal, if having the unilateral conductivity of electric current according to the direction of applied voltage.The production of chip diode
Method is diode chip for backlight unit to be welded in conductive frame, then suppress conductive sheet by electrical fire flower process and form bending Z-type, up and down
Mould carries out pressing mold shape forming cavity above and below the conductive frame that diode chip for backlight unit is welded, and obtains patch type two after being molded into mold
Pole pipe.
The current direction that most of diode has we be normally referred to as rectification function, mistake of the diode in rectification
Cheng Zhonghui generates heat, and especially high current power consumption in rectification is larger, and the calorific value of diode is caused also to increase, and influences two poles
The performance of pipe passes through the plastic material package of insulation, heat dissipation performance is bad, is easy to lead in the prior art outside chip diode
It causes the temperature of diode chip for backlight unit excessively high and influences its working performance.
Utility model content
Based on this, it is necessary to be directed to prior art problem, provide a kind of chip diode with radiator structure, have
Good heat dissipation performance effectively can avoid heat from accumulating in diode chip for backlight unit and influence its working performance.
To solve prior art problem, the utility model discloses a kind of chip diode with radiator structure, including
Z-shaped the first conductive sheet and the second conductive sheet, is connected with diode chip for backlight unit between the first conductive sheet and the second conductive sheet, and first
Conductive sheet is connected by the bottom end of the first welding layer and diode chip for backlight unit, and the second conductive sheet passes through the second welding layer and diode core
The top of piece connects, and the insulation-encapsulated body passed through by the first conductive sheet and the second conductive sheet is surrounded by outside diode chip for backlight unit；
First conductive sheet is equipped with radiator structure far from the side of diode chip for backlight unit, and the second conductive sheet is far from diode chip for backlight unit
Side also is provided with radiator structure, and radiator structure includes thermal grease layer, and thermal grease layer is connected far from the side of diode chip for backlight unit
There is steel mesh heat dissipating layer, two thermal grease layers are connect with the first conductive sheet and the second conductive sheet respectively.
Further, the first welding layer and the second welding layer are silver paste welding layer.
Further, steel mesh heat dissipating layer is located on the outer surface of insulation-encapsulated body.
Further, the length of steel mesh heat dissipating layer is L, between the bottom end of the first conductive sheet and the bottom end of the second conductive sheet
Minimum spacing is D, D > L.
Further, several thermal conductive ceramic particles are equipped in thermal grease layer.
The utility model has the following beneficial effects: the utility model discloses a kind of chip diode with radiator structure,
Special radiator structure is set, and the heat that diode chip for backlight unit issues can be transmitted in large area radiator structure by conductive sheet
On, radiator structure can carry out efficient heat exchange with external environment, have good heat dissipation performance, and radiating efficiency is high, thus
Effectively heat can be avoided to accumulate in diode chip for backlight unit, can effectively ensure the working performance of diode entirety.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Appended drawing reference are as follows: the first conductive sheet 10, the first welding layer 11, the second conductive sheet 20, the second welding layer 21, diode
Chip 30, insulation-encapsulated body 40, radiator structure 50, thermal grease layer 51, steel mesh heat dissipating layer 52, thermal conductive ceramic particle 53.
Specific embodiment
For the feature, technological means and specific purposes achieved, function that can further appreciate that the utility model, below
The utility model is described in further detail in conjunction with attached drawing and specific embodiment.
With reference to Fig. 1.
The utility model embodiment discloses a kind of chip diode with radiator structure, leads including Z-shaped first
Electric piece 10 and the second conductive sheet 20, are connected with diode chip for backlight unit 30, conductive sheet between the first conductive sheet 10 and the second conductive sheet 20
Upper mounting plate, bending part and lead portion are generally comprised, diode chip for backlight unit 30 is connect with the upper mounting plate of conductive sheet, and the first conductive sheet 10 is logical
It crosses the first welding layer 11 to connect with the bottom end of diode chip for backlight unit 30, the second conductive sheet 20 passes through the second welding layer 21 and diode core
The top of piece 30 connects, and the insulation-encapsulated passed through by the first conductive sheet 10 and the second conductive sheet 20 is surrounded by outside diode chip for backlight unit 30
Insulation-encapsulated body 40,20 bottom of bottom and the second conductive sheet of the first conductive sheet 10 are fixed with outside body 40, i.e. diode chip for backlight unit 30
It is pierced by the setting of insulation-encapsulated body 40；
First conductive sheet 10 is equipped with radiator structure 50 far from the side of diode chip for backlight unit 30, and the second conductive sheet 20 is far from two poles
The side of tube chip 30 also is provided with radiator structure 50, and radiator structure 50 includes thermal grease layer 51, thermal grease layer 51 and conduction
The upper mounting plate of piece connects, and thermal grease has good heating conduction and insulation performance, can effectively ensure diode chip for backlight unit 30
Heat dissipation performance, while can effectively avoid diode chip for backlight unit 30 from being short-circuited, thermal grease layer 51 is far from diode chip for backlight unit 30
Side is connected with steel mesh heat dissipating layer 52, and two thermal grease layers 51 are connect with the first conductive sheet 10 and the second conductive sheet 20 respectively,
Most of heat that diode chip for backlight unit 30 generates when working is transmitted on conductive sheet by welding layer, and the heat on conductive sheet passes through
Silica gel heat dissipating layer 51 is transmitted on steel mesh heat dissipating layer 52, and steel mesh heat dissipating layer 52 has excellent heat dissipation performance, can be indirectly by two
The thermal energy of pole pipe chip 30 is transmitted in extraneous space, be can effectively avoid heat and is accumulated on diode chip for backlight unit 30 and influence it
Working performance.
Special radiator structure is arranged in the utility model, and the heat that diode chip for backlight unit issues can pass through conductive sheet large area
Ground is transmitted on radiator structure, and radiator structure can carry out efficient heat exchange with external environment, has good heat dissipation performance,
Radiating efficiency is high, so as to effectively heat be avoided to accumulate in diode chip for backlight unit, can effectively ensure the workability of diode entirety
Energy.
In the present embodiment, the first welding layer 11 and the second welding layer 21 are silver paste welding layer, and silver paste has good
Electric conductivity and heating conduction can effectively improve the performance of diode.
In the present embodiment, steel mesh heat dissipating layer 52 is located on the outer surface of insulation-encapsulated body 40, can effectively ensure steel mesh
Heat dissipating layer 52 efficiently can carry out heat exchange with extraneous air, to effectively ensure steel mesh heat dissipating layer 52 to diode chip for backlight unit
30 heat dissipation effect.
Based on the above embodiment, the length of steel mesh heat dissipating layer 52 is L, the bottom end of the first conductive sheet 10 and the second conductive sheet 20
Bottom end between minimum spacing be D, D > L, it can be ensured that steel mesh heat dissipating layer 52 will not be in contact with conductive sheet, can be effective
It avoids conductive sheet by 52 short circuit of steel mesh heat dissipating layer, can effectively ensure the reliability of diode operation.
In the present embodiment, it is equipped with several thermal conductive ceramic particles 53 in thermal grease layer 51, radiator structure can be effectively improved
50 heat dissipation effect effectively can avoid heat from accumulating on diode chip for backlight unit, to effectively improve the performance of diode.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (5)
1. a kind of chip diode with radiator structure, which is characterized in that including Z-shaped the first conductive sheet (10) and
Two conductive sheets (20) are connected with diode chip for backlight unit (30) between first conductive sheet (10) and second conductive sheet (20),
First conductive sheet (10) is connect by the first welding layer (11) with the bottom end of the diode chip for backlight unit (30), and described second leads
Electric piece (20) is connect by the second welding layer (21) with the top of the diode chip for backlight unit (30), and the diode chip for backlight unit (30) is outside
It is surrounded by the insulation-encapsulated body (40) passed through by first conductive sheet (10) and second conductive sheet (20)；
First conductive sheet (10) is equipped with radiator structure (50) far from the side of the diode chip for backlight unit (30), and described second leads
Electric piece (20) also is provided with the radiator structure (50) far from the side of the diode chip for backlight unit (30), radiator structure (50) packet
It includes thermal grease layer (51), the thermal grease layer (51) is connected with steel mesh heat dissipation far from the side of the diode chip for backlight unit (30)
Layer (52), two thermal grease layers (51) connect with first conductive sheet (10) and second conductive sheet (20) respectively
It connects.
2. a kind of chip diode with radiator structure according to claim 1, which is characterized in that first weldering
Connecing layer (11) and second welding layer (21) is silver paste welding layer.
3. a kind of chip diode with radiator structure according to claim 1, which is characterized in that the steel mesh dissipates
Thermosphere (52) is located on the outer surface of the insulation-encapsulated body (40).
4. a kind of chip diode with radiator structure according to claim 3, which is characterized in that the steel mesh dissipates
The length of thermosphere (52) is L, between the bottom end of first conductive sheet (10) and the bottom end of second conductive sheet (20) most
Small spacing is D, D > L.
5. a kind of chip diode with radiator structure according to claim 1, which is characterized in that the heat dissipation silicon
Several thermal conductive ceramic particles (53) are equipped in glue-line (51).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822221414.3U CN209150091U (en) | 2018-12-26 | 2018-12-26 | A kind of chip diode with radiator structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822221414.3U CN209150091U (en) | 2018-12-26 | 2018-12-26 | A kind of chip diode with radiator structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209150091U true CN209150091U (en) | 2019-07-23 |
Family
ID=67290904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822221414.3U Active CN209150091U (en) | 2018-12-26 | 2018-12-26 | A kind of chip diode with radiator structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209150091U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473849A (en) * | 2019-08-21 | 2019-11-19 | 河源创基电子科技有限公司 | A kind of thermally conductive steady type chip diode |
| CN112885787A (en) * | 2021-01-25 | 2021-06-01 | 互创(东莞)电子科技有限公司 | Surface mount diode and packaging forming process thereof |
| CN113192938A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Large-current non-polar Schottky diode |
-
2018
- 2018-12-26 CN CN201822221414.3U patent/CN209150091U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473849A (en) * | 2019-08-21 | 2019-11-19 | 河源创基电子科技有限公司 | A kind of thermally conductive steady type chip diode |
| CN112885787A (en) * | 2021-01-25 | 2021-06-01 | 互创(东莞)电子科技有限公司 | Surface mount diode and packaging forming process thereof |
| CN113192938A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Large-current non-polar Schottky diode |
| CN113192938B (en) * | 2021-04-29 | 2022-06-21 | 东莞市佳骏电子科技有限公司 | Large-current non-polar Schottky diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231122 Address after: 523430 Building 1 and 2, No. 70, Liaobu Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd. Address before: No. 13 Baiye Avenue, Shangtun Industrial Zone, Liaobu Town, Dongguan City, Guangdong Province, 523430 Patentee before: Mutual Creation (Dongguan) Electronic Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |