CN103579143A - Flat type power device packaging structure based on internal cooling heat dissipation - Google Patents

Flat type power device packaging structure based on internal cooling heat dissipation Download PDF

Info

Publication number
CN103579143A
CN103579143A CN201310536700.8A CN201310536700A CN103579143A CN 103579143 A CN103579143 A CN 103579143A CN 201310536700 A CN201310536700 A CN 201310536700A CN 103579143 A CN103579143 A CN 103579143A
Authority
CN
China
Prior art keywords
power device
heat dissipation
conductive insulating
packaging structure
structure based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310536700.8A
Other languages
Chinese (zh)
Other versions
CN103579143B (en
Inventor
李继鲁
方杰
常桂钦
贺新强
曾雄
彭明宇
彭勇殿
颜骥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuzhou CRRC Times Electric Co Ltd
Zhuzhou CRRC Times Semiconductor Co Ltd
Original Assignee
Zhuzhou CSR Times Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhuzhou CSR Times Electric Co Ltd filed Critical Zhuzhou CSR Times Electric Co Ltd
Priority to CN201310536700.8A priority Critical patent/CN103579143B/en
Publication of CN103579143A publication Critical patent/CN103579143A/en
Application granted granted Critical
Publication of CN103579143B publication Critical patent/CN103579143B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

Abstract

The invention discloses a flat type power device packaging structure based on internal cooling heat dissipation. The structure comprises a chip, a molybdenum piece, a gate pole and an outer shell assembly, wherein the outer shell assembly comprises an outer shell and an electrode copper block, the periphery of the electrode copper block is provided with radiator assemblies used for heat conduction and insulation, and the radiator assemblies surround the electrode copper block in a wrapping mode. The structure has the advantages of being simple and compact, low in cost, convenient to manufacture, good in heat dissipation effect, high in heat dissipation speed, good in safety and reliability and the like.

Description

Plate power device packaging structure based on interior cooling heat dissipation
Technical field
The present invention is mainly concerned with power device field, refers in particular to a kind of plate power device packaging structure based on interior cooling heat dissipation.
Background technology
The a lot of occasions of power device in application all will be used the mounting structure of water-cooling.The typical structure of existing compression joint type power device (as thyristor) as shown in Figure 1, comprises the parts such as chip 1, molybdenum sheet 2, gate pole 4, casing assembly, and wherein casing assembly mainly consists of ceramic package 5 and electrode copper billet 3.Chip 1 is as pyrotoxin, and the heat of its generation is delivered to by electrode copper billet 3 heat radiation that outside water-filled radiator is realized device.Meanwhile, electrode copper billet 3 is also responsible for bearing device and is used the pressure assembling force while installing.As shown in Figure 2, be the series connection press mounting structure of exemplary power device, water-filled radiator 7 is equipped with in all side pressures of power device 6.In this structure, the power device of use is more, and the quantity of water-filled radiator, also along with increase, can cause the volume of whole device too huge like this.Owing to having adopted external cooling mode, water-filled radiator is distant from thermal source (chip) simultaneously, and this structure exists larger bulk thermal resistance and contact heat resistance, thereby makes heat-sinking capability be subject to larger restriction.Water-filled radiator needs to bear larger setting pressure together with power device, and because its internal placement has water stream channel, compression strength is lower, may be because radiator is out of shape the life-span of reducing whole device in long-term use procedure.Traditional power device water-cooled press mounting structure adopts deionized water as cooling water, and this is because deionized water itself is non-conductive, the electric current in device two end electrodes can be transmitted in water and bring danger.But the preparation of deionized water needs special equipment, this can cause the operating cost of power device to raise.
There is practitioner to adopt a kind of press mounting structure of water power isolation, as shown in Figure 3, by adopting heat conductive insulating dividing plate 8 by the electrode of power device 6 and water-filled radiator 7 isolation, then adopt connection busbar 9 that the electrode of each device is coupled together.This scheme can adopt common cooling water, but will cause obviously above-mentioned problem more serious.
There is practitioner, further provide after a kind of optimize the typical structure of compression joint type power device (as thyristor), as shown in Figure 4, this structure has designed cooling water channel 10 on electrode copper billet 3, is equivalent to power device 6 and water-filled radiator 7 to be integrated together.Thermal resistance when this structure can reduce power device 6 application, the through-current capability of raising device.But it still can not the aforesaid variety of issue of fully effective solution.
Summary of the invention
The technical problem to be solved in the present invention is just: the technical problem existing for prior art, the invention provides a kind of simple and compact for structure, with low cost, easy to make, good heat dissipation effect, radiating rate is fast, security reliability the is good plate power device packaging structure based on interior cooling heat dissipation.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of plate power device packaging structure based on interior cooling heat dissipation, it comprises chip, molybdenum sheet, gate pole and casing assembly, described casing assembly comprises shell and electrode copper billet, all side settings of described electrode copper billet are used for the heat conductive insulating radiator assembly of heat conductive insulating, and described heat conductive insulating radiator assembly is all sides that parcel shape is centered around electrode copper billet.
As a further improvement on the present invention:
Described heat conductive insulating radiator assembly extends near chip from outside to inside always.
Described heat conductive insulating radiator assembly is connected to become an integral body by welding manner and electrode copper billet.
Described heat conductive insulating radiator assembly adopts heat-conducting insulation material to make.
Described heat-conducting insulation material is AlN or Al 2o 3.
Described heat conductive insulating radiator assembly is water cooled heat radiating body assembly, and the internal placement of described heat conductive insulating radiator assembly has the cooling water channel passing into for coolant.
Compared with prior art, the invention has the advantages that:
(1) the plate power device packaging structure based on interior cooling heat dissipation of the present invention, simple and compact for structure, with low cost, easy to make, the type of cooling in adopting, cooling structure from thermal source more close to, area of dissipation is larger, therefore radiating rate is better, can greatly improve the heat-sinking capability of power device, and then the through-current capability can further promote its work time.
(2) the plate power device packaging structure based on interior cooling heat dissipation of the present invention, adopt periphery radiating mode, radiator assembly no longer bears setting pressure, can there is not the problem of radiator deformation failure, therefore promote the intensity of power device or its application apparatus, thereby can extend useful life and the security reliability of whole application apparatus.
(3) the plate power device packaging structure based on interior cooling heat dissipation of the present invention, adopted heat-conducting insulation material to make radiator assembly, optimized the water power isolation structure of above-mentioned power device in water-cooling application, thereby made whole application apparatus structure compact and reasonable more.
Accompanying drawing explanation
Fig. 1 is the encapsulating structure schematic diagram of existing typical flat template power device (thyristor).
Fig. 2 is the schematic diagram of the water-cooled press mounting structure of typical flat template power device.
Fig. 3 is the existing schematic diagram that has adopted the power device water-cooled press mounting structure of water power isolation scheme.
Fig. 4 is existing integrated plate power device (thyristor) the encapsulating structure schematic diagram of water-cooling.
Fig. 5 is encapsulating structure schematic diagram of the present invention.
Marginal data:
1, chip; 2, molybdenum sheet; 3, electrode copper billet; 4, gate pole; 5, shell; 6, power device; 7, water-filled radiator; 8, heat conductive insulating dividing plate; 9, connect busbar; 10, cooling water channel; 11, heat conductive insulating radiator assembly.
Embodiment
Below with reference to Figure of description and specific embodiment, the present invention is described in further details.
As shown in Figure 5, for the plate power device packaging structure based on interior cooling heat dissipation of the present invention, take thyristor as example in this example, other such as rectifying tube, crimp type IGBT, IGCT, GTO etc. is all the principles based on same.It comprises chip 1, molybdenum sheet 2, gate pole 4 and casing assembly, casing assembly comprises ceramic shell 5 and electrode copper billet 3, chip 1 is as pyrotoxin, and the heat of its generation transmits by electrode copper billet 3, and electrode copper billet 3 is also responsible for bearing device and is used the pressure assembling force while installing simultaneously.The present invention is used for the heat conductive insulating radiator assembly 11 of heat conductive insulating in all side settings of electrode copper billet 3, heat conductive insulating radiator assembly 11 is all sides that parcel shape is centered around electrode copper billet 3, and this heat conductive insulating radiator assembly 11 extends near chip 1 from outside to inside always, and and electrode copper billet 3 by welding manner (as soldering etc.), connect into as a whole.Heat conductive insulating radiator assembly 11 adopts heat-conducting insulation materials (for example AlN, Al 2o 3deng) make, therefore can realize easily water power isolation.
In the present embodiment, heat conductive insulating radiator assembly 11 can also be further water cooled heat radiating body assembly, in the internal placement of heat conductive insulating radiator assembly 11, has cooling water channel 10 according to actual needs, for coolant, passes into, and forms multiple, potent cooling.
From said structure, the present invention is inner colded mode, and cooling water is from chip 1(thermal source) distance very close to, raising cooling rate that can be by a relatively large margin.For electrode copper billet 3, the invention belongs to the cooling mode of periphery, whole area of dissipation is larger, and heat conductive insulating radiator assembly 11 no longer bears setting pressure, thereby has greatly improved the stability of its useful life and whole power device.
Below be only the preferred embodiment of the present invention, protection scope of the present invention is also not only confined to above-described embodiment, and all technical schemes belonging under thinking of the present invention all belong to protection scope of the present invention.It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, should be considered as protection scope of the present invention.

Claims (6)

1. the plate power device packaging structure based on interior cooling heat dissipation, it comprises chip (1), molybdenum sheet (2), gate pole (4) and casing assembly, described casing assembly comprises shell (5) and electrode copper billet (3), it is characterized in that, all side settings of described electrode copper billet (3) are used for the heat conductive insulating radiator assembly (11) of heat conductive insulating, and described heat conductive insulating radiator assembly (11) is all sides that parcel shape is centered around electrode copper billet (3).
2. the plate power device packaging structure based on interior cooling heat dissipation according to claim 1, is characterized in that, described heat conductive insulating radiator assembly (11) extends near chip (1) from outside to inside always.
3. the plate power device packaging structure based on interior cooling heat dissipation according to claim 1, is characterized in that, described heat conductive insulating radiator assembly (11) connects into as a whole by welding manner and electrode copper billet (3).
4. according to the plate power device packaging structure based on interior cooling heat dissipation described in claim 1 or 2 or 3, it is characterized in that, described heat conductive insulating radiator assembly (11) adopts heat-conducting insulation material to make.
5. the plate power device packaging structure based on interior cooling heat dissipation according to claim 4, is characterized in that, described heat-conducting insulation material is AlN or Al 2o 3.
6. according to the plate power device packaging structure based on interior cooling heat dissipation described in claim 1 or 2 or 3, it is characterized in that, described heat conductive insulating radiator assembly (11) is water cooled heat radiating body assembly, and the internal placement of described heat conductive insulating radiator assembly (11) has the cooling water channel (10) passing into for coolant.
CN201310536700.8A 2013-11-04 2013-11-04 Plate power device packaging structure based on interior cooling heat radiation Active CN103579143B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310536700.8A CN103579143B (en) 2013-11-04 2013-11-04 Plate power device packaging structure based on interior cooling heat radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310536700.8A CN103579143B (en) 2013-11-04 2013-11-04 Plate power device packaging structure based on interior cooling heat radiation

Publications (2)

Publication Number Publication Date
CN103579143A true CN103579143A (en) 2014-02-12
CN103579143B CN103579143B (en) 2016-08-24

Family

ID=50050605

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310536700.8A Active CN103579143B (en) 2013-11-04 2013-11-04 Plate power device packaging structure based on interior cooling heat radiation

Country Status (1)

Country Link
CN (1) CN103579143B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107317574A (en) * 2017-06-09 2017-11-03 南京理工大学 From cooling high voltage pulse switch device
CN109827693A (en) * 2019-03-22 2019-05-31 华北电力大学 A kind of crimp type power semiconductor internal pressure distribution measurement system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07312420A (en) * 1994-05-18 1995-11-28 Toyo Electric Mfg Co Ltd Gate electrode structure of pressure welding type semiconductor device
CN101308826A (en) * 2008-06-13 2008-11-19 江阴市赛英电子有限公司 Novel integrated water-cooling thyristor ceramic housing
CN201417775Y (en) * 2009-05-18 2010-03-03 陆小荣 Plastic shell packaged flat plate thyristor
CN202888185U (en) * 2012-09-21 2013-04-17 北京新创椿树整流器件有限公司 Flat packaging crimping type outlet electrode insulated gate bipolar transistor element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07312420A (en) * 1994-05-18 1995-11-28 Toyo Electric Mfg Co Ltd Gate electrode structure of pressure welding type semiconductor device
CN101308826A (en) * 2008-06-13 2008-11-19 江阴市赛英电子有限公司 Novel integrated water-cooling thyristor ceramic housing
CN201417775Y (en) * 2009-05-18 2010-03-03 陆小荣 Plastic shell packaged flat plate thyristor
CN202888185U (en) * 2012-09-21 2013-04-17 北京新创椿树整流器件有限公司 Flat packaging crimping type outlet electrode insulated gate bipolar transistor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107317574A (en) * 2017-06-09 2017-11-03 南京理工大学 From cooling high voltage pulse switch device
CN107317574B (en) * 2017-06-09 2020-08-11 南京理工大学 Self-cooling high-voltage pulse switch device
CN109827693A (en) * 2019-03-22 2019-05-31 华北电力大学 A kind of crimp type power semiconductor internal pressure distribution measurement system
CN109827693B (en) * 2019-03-22 2023-09-12 华北电力大学 Pressure-welding type power semiconductor device internal pressure distribution measuring system

Also Published As

Publication number Publication date
CN103579143B (en) 2016-08-24

Similar Documents

Publication Publication Date Title
CN104966704B (en) A kind of compression joint type power device package of low thermal resistance
CN102201449B (en) Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device
CN101819970A (en) Welded IGBT and solderless diode-based series structure module
CN209150091U (en) A kind of chip diode with radiator structure
CN202261060U (en) Water-cooling radiating double-rectification module suitable for electric welder
CN103579143B (en) Plate power device packaging structure based on interior cooling heat radiation
JP2019062066A (en) Semiconductor device
CN102163928A (en) Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine
CN202888185U (en) Flat packaging crimping type outlet electrode insulated gate bipolar transistor element
CN204792757U (en) Crimping formula power device packagiing of low thermal resistance
CN201985749U (en) Power unit with water cooling plate shared by power device and capacitor
CN204680661U (en) Module is surrounded in igbt chip heat radiation
CN102610737A (en) Heat-radiating device of high-power LED (Light Emitting Diode)
CN203255970U (en) Semiconductor ozone generator
CN202546853U (en) Quick-heat-dissipation electromagnetic oven
CN202134538U (en) Flat type silicon controlled rectifier
CN109068535B (en) Be applied to circulating cooling device of electric wire netting
CN201789706U (en) High-power module
CN203351576U (en) Full compression joint type insulated gate bipolar transistor device
CN203013292U (en) Highly effective inner heat conduction type flexible connection cable
CN207011177U (en) A kind of heat abstractor of high-power paster
CN201075816Y (en) New type high power driver
CN103400671B (en) A kind of electrothermal tube water-cooled resistor and preparation technology thereof
CN204088177U (en) Pole and high pressure coupling assembling
CN203423159U (en) High-power ceramic package IGBT (insulated gate bipolar transistor) efficient two-sided refrigerating integral tube shell

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169

Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd.

Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169

Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20201021

Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province

Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd.

Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169

Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd.

TR01 Transfer of patent right