CN109827693A - A kind of crimp type power semiconductor internal pressure distribution measurement system - Google Patents
A kind of crimp type power semiconductor internal pressure distribution measurement system Download PDFInfo
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- CN109827693A CN109827693A CN201910220725.4A CN201910220725A CN109827693A CN 109827693 A CN109827693 A CN 109827693A CN 201910220725 A CN201910220725 A CN 201910220725A CN 109827693 A CN109827693 A CN 109827693A
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Abstract
The invention discloses a kind of crimp type power semiconductor internal pressure distribution measurement systems, including collector, emitter and submodule group；Collector, submodule group and emitter successively connect；Submodule group is arranged between collector and emitter；Wherein, submodule group includes semiconductor chip, hot-fluid and electric current conducting structure and pressure sensor, and collector, semiconductor chip, hot-fluid and electric current conducting structure and emitter successively connect；Pressure sensor is connected with hot-fluid and electric current conducting structure inner wall bottom surface and end face respectively.Crimp type power semiconductor internal pressure distribution measurement system provided by the invention can reduce the requirement to pressure sensor, realization accurately measures chip pressure distribution situation under any operating condition, breaks through the limitation that existing measurement method measures under the conditions of nominal situation.
Description
Technical field
The present invention relates to technical field of semiconductor device, more particularly to pressure inside a kind of crimp type power semiconductor
Power distribution measurement system.
Background technique
With the development of flexible DC transmission technology, IGBT (Insulated Gate BipolarTransistor, insulation
Grid bipolar junction transistor) device is increasingly taken seriously, become the Primary Component in converter valve and breaker.In recent years, occur
The IGBT device of crimping packing forms has big power density, high reliablity, easily compared with the traditional welding Formulas I GBT module
It in series connection and fails the advantages that short-circuit, is gradually applied to the occasion of high-power transmission of electricity.
Crimp type IGBT device keeps the close contact of each inter-module by exerting pressure outside, forms conductive and thermal conducting path.
And chip fever will lead to pole plate and warpage occurs, so that each chip pressure distribution situation changes, and then influence Temperature Distribution
And current distribution, chip service life and device reliability are had an impact.Therefore, the measurement of each chip pressure distribution becomes connector presser
One of the problem of being paid close attention to the most in part application.
Since crimping packing forms are very novel, the measurement method of crimp type IGBT device inside chip pressure distribution is still not
It is perfect.There are mainly two types of the methods of each chip pressure distribution of the device inside of measurement crimping at present:
1) by arranging pressure measurement film in device, each chip pressure distribution can pressure-sensitive paper measurement method: be measured
Situation, but since pressure measurement film is non-conductive, therefore it is only capable of obtaining pressure distribution situation of the device not under working condition, and can not
Obtain pressure distribution situation when temperature rise occurs in chip.
2) device exterior arranges pressure sensor: for single-chip devices, pressure sensor can be arranged outside device
Obtain chip suffered average pressure in real time.For multichip device, the available device of pressure sensor is arranged outside device
Suffered average pressure in real time, but the pressure distribution situation of each chip cannot be obtained.If arranging pressure sensor in device inside,
Pressure sensor applied by it is required that must have good conductive characteristic, while should can protect under high current, hot environment
Higher measurement accuracy is held, i.e., the requirement to pressure sensor is high.
Summary of the invention
The object of the present invention is to provide a kind of crimp type power semiconductor internal pressure distribution measurement systems, can drop
The measurement to chip pressure distribution situation under any operating condition is realized in the low requirement to pressure sensor.
To achieve the above object, the present invention provides following schemes:
A kind of crimp type power semiconductor internal pressure distribution measurement system, including collector, emitter and submodule
Group；The collector, the submodule group and the emitter successively connect；Submodule group setting in the collector and
Between the emitter；
Wherein, the submodule group includes semiconductor chip, hot-fluid and electric current conducting structure and pressure sensor, the current collection
Pole, the semiconductor chip, the hot-fluid and electric current conducting structure and the emitter successively connect；The pressure sensing
Device is connected with the hot-fluid and electric current conducting structure inner wall bottom surface and inner wall end surface respectively.
Optionally, the hot-fluid and electric current conducting structure include two silver-colored gaskets and insulation insulation spacer, the two silver pads
Piece is connected at set angle, it is described insulation insulation spacer with silver gasket interior side contacts connect, the pressure sensor with it is described
Insulation spacer is insulated to connect.
Optionally, the submodule group further include:
First molybdenum sheet is connected with the collector and the semiconductor chip respectively；
Second molybdenum sheet is connected with the semiconductor chip and the hot-fluid and electric current conducting structure respectively.
Optionally, the submodule group further includes subelement frame, is arranged between the collector and the emitter, and
The semiconductor chip and the hot-fluid and electric current conducting structure are fixedly installed in the subelement frame.
Optionally, the emitter includes:
Boss is connected with the hot-fluid and electric current conducting structure, and is arranged with the subelement frames match；
Emitter pole plate is connected with the boss.
Optionally, the crimp type power semiconductor internal pressure distribution measurement system further include:
Printed circuit board is connect with the submodule group and the emitter respectively；
Lead is connect with the printed circuit board；
Pressure sensor signal line is connect with the submodule group, the printed circuit board and the lead respectively.
Optionally, the quantity of the submodule group is multiple.
Optionally, the crimp type power semiconductor internal pressure distribution measurement system further includes ceramic cartridge,
The ceramic cartridge, the collector and emitter matching setting, form confined space.
Optionally, the crimp type power semiconductor internal pressure distribution measurement system further includes electrode flange,
The electrode flange is connect with the ceramic cartridge, the collector and the emitter respectively.
The specific embodiment provided according to the present invention, the invention discloses following technical effects: the present invention provides a kind of pressure
Direct type power semiconductor internal pressure distribution measurement system, including collector, emitter, semiconductor chip, hot-fluid and electricity
Guide structure and pressure sensor are spread, the pressure sensor is built in hot-fluid and electric current conducting structure, the hot-fluid and electricity
The setting of guide structure is spread so that hot-fluid, electric current are no longer flow through the pressure sensor, to no longer need to pressure sensor
Measurement accuracy under high current, hot environment claims, that is, reduces the requirement to pressure sensor, reduces measurement structure
Influence to measurement result breaks through existing measurement side further, it can be achieved that obtaining each chip pressure distribution situation under any operating condition
The limitation that method measures under the conditions of nominal situation.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system internal structure section
Schematic diagram；
Fig. 2 is crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system internal structure part
Enlarged diagram；
Fig. 3 is that the sensor of crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system is distributed
Schematic diagram；
Fig. 4 is the assembling of crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system measurement structure
Method schematic diagram；
Fig. 5 is the optional knot of crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system silver gasket
Structure schematic diagram；
Fig. 6 is that crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system hot-fluid and electric current exist
Conduction condition schematic diagram in conducting structure.
Detailed description of the invention: 1, collector；2, the first molybdenum sheet；3, semiconductor chip；4, the second molybdenum sheet；5, silver-colored gasket；6, boss；
7, subelement frame；8, printed circuit board；9, emitter pole plate；10, pressure sensor；11, insulation and thermal insulation gasket；12, pressure
Sensor signal lines；13, electrode flange；14, ceramic cartridge；15, lead；101, the first submodule group；102, the second submodule group；
103, third submodule group；104, the 4th submodule group.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of crimp type power semiconductor internal pressure distribution measurement systems, can drop
The measurement to chip pressure distribution situation under any operating condition is realized in the low requirement to pressure sensor 10.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system internal structure section
Schematic diagram schematic diagram, as shown in Figure 1, crimp type power semiconductor internal pressure distribution measurement system collection provided by the invention
Electrode 1, emitter and submodule group；The collector 1, the submodule group and the emitter successively connect；The submodule
Group is arranged between the collector 1 and the emitter；
Wherein, the submodule group includes semiconductor chip 3, hot-fluid and electric current conducting structure and pressure sensor 10, described
Collector 1, the semiconductor chip 3, the hot-fluid and electric current conducting structure and emitter successively connect；The pressure passes
Sensor 10 is connected with the hot-fluid and electric current conducting structure inner wall bottom surface and end face respectively.
Hot-fluid and electric current conducting structure be in the present embodiment for changing the original electric current of device, heat flow path so that without pair
Measurement accuracy of the pressure sensor 10 under high current, hot environment claims.
More evenly for 3 stress distribution of semiconductor chip, the present invention is provided with the first molybdenum sheet of stress buffer area 2 and states second
Molybdenum sheet 4；First molybdenum sheet 2 is connected with the collector 1 and the semiconductor chip 3 respectively；Second molybdenum sheet 4,
It is connected respectively with the semiconductor chip 3 and the hot-fluid and electric current conducting structure.
It further, will be described in order to be fixedly installed the semiconductor chip 3 and the hot-fluid and electric current conducting structure
Semiconductor chip 3 and the hot-fluid and electric current conducting structure are arranged in subelement frame 7.
The emitter of crimp type power semiconductor internal pressure distribution measurement system provided by the invention includes boss 6
With emitter pole plate 9；The boss 6 is connected with the hot-fluid and electric current conducting structure, and with the subelement frame 7
With setting, and then the boss 6 realizes the support and positioning action to submodule group.
In the particular embodiment, crimp type power semiconductor internal pressure distribution measurement system provided by the invention
It further include printed circuit board 8, lead 15 and pressure sensor signal line 12；Wherein, the printed circuit board 8 respectively with the son
Mould group is connected with the emitter；The lead 15 is connect with the printed circuit board 8；The pressure sensor signal line 12 divides
It is not connect with the submodule group, the printed circuit board 8 and the lead 15；Wherein, the printed circuit board 8 and the submodule
Group and the emitter are contact connectio physically, i.e., the described printed circuit board 8 and the lead 15 for providing gate pole drive
Dynamic signal, not in main electric loop, and then the location circuit printing plate where the submodule group is empty.
In order to which device is from outside contamination, crimp type power semiconductor internal pressure distribution provided in this embodiment is surveyed
Amount system further includes ceramic cartridge 14, and the ceramic cartridge 14, the collector 1 and emitter matching setting are formed close
Space is closed, and in order to guarantee being bonded for confined space, further that electrode flange 13 is arranged, the electrode flange 13 divides
It is not connect with the ceramic cartridge 14, the collector 1 and the emitter.
Fig. 2 is crimp type of embodiment of the present invention power semiconductor internal pressure distribution measurement system internal structure part
Enlarged diagram.Wherein, the hot-fluid and electric current conducting structure include two silver-colored gaskets 5 and insulation insulation spacer 11, described in two
Silver-colored gasket 5 is connected at set angle, and the insulation insulation spacer 11 is connect with the interior side contacts of silver-colored gasket 5 respectively, the pressure
Sensor 10 and the insulation insulation spacer 11 connect.Silver-colored gasket 5 connects with first molybdenum sheet 2 and the boss 6 respectively
Touching.There is good thermal conductivity and electric conductivity using the silver-colored gasket 5 and be insulated the characteristic of insulation spacer 11, make hot-fluid and electric current
It no longer vertically flows, but flow to the boss 6 from second molybdenum sheet 4 along silver-colored 5 surface of gasket, be no longer flow through
The pressure sensor 10, as shown in fig. 6, to achieve the purpose that change hot-fluid and current conduction path.
Wherein, two silver-colored gaskets 5 in the hot-fluid and electric current conducting structure not only can be by the side such as contacting, welding
Formula realizes connection, can also be used as same two whole parts and realizes connection, as shown in figure 5, the box like structure of a side opening
Or other similar flow-guiding structure is also believed to a kind of connection type of the two silver-colored gaskets 5, upper and lower surface is described in two
Silver-colored gasket 5.
Further, described in crimp type power semiconductor internal pressure distribution measurement system provided by the invention
The quantity of submodule group is multiple, and if Fig. 3 and Fig. 4 is it is found that multiple submodule groups are arranged in parallel, can be obtained in real time in crimping device
The pressure distribution situation of each chip under any operating condition in portion.
The present invention provides a kind of crimp type power semiconductor internal pressure distribution measurement system, the pressure sensor
10 are built in hot-fluid and electric current conducting structure, and the setting of the hot-fluid and electric current conducting structure is so that hot-fluid, electric current no longer flow
Through the pressure sensor 10, to no longer need to propose measurement accuracy of the pressure sensor 10 under high current, hot environment
It requires out, that is, reduces the requirement to pressure sensor 10, reducing influence of the measurement structure to measurement result further can be real
Each chip pressure distribution situation under any operating condition is now obtained, and makes full use of original structure, it is easy to operate, while reducing survey
Measure influence of the structure to measurement result.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (9)
1. a kind of crimp type power semiconductor internal pressure distribution measurement system, which is characterized in that the crimp type power
Semiconductor device inside Pressure Distribution Measuring System includes collector, emitter and submodule group；The collector, the submodule group
It is successively connected with the emitter；The submodule group is arranged between the collector and the emitter；
Wherein, the submodule group includes semiconductor chip, hot-fluid and electric current conducting structure and pressure sensor, the collector,
The semiconductor chip, the hot-fluid and electric current conducting structure and the emitter successively connect；The pressure sensor
It is connected respectively with the hot-fluid and electric current conducting structure inner wall bottom surface and inner wall end surface.
2. crimp type power semiconductor internal pressure distribution measurement system according to claim 1, which is characterized in that institute
It states hot-fluid and electric current conducting structure includes two silver-colored gaskets and insulation insulation spacer, the two silver-colored gaskets are connected at set angle,
The insulation insulation spacer is connect with the interior side contacts of the silver-colored gasket, and the pressure sensor connects with the insulation insulation spacer
Touching connection.
3. crimp type power semiconductor internal pressure distribution measurement system according to claim 1, which is characterized in that institute
State submodule group further include:
First molybdenum sheet is connected with the collector and the semiconductor chip respectively；
Second molybdenum sheet is connected with the semiconductor chip and the hot-fluid and electric current conducting structure respectively.
4. crimp type power semiconductor internal pressure distribution measurement system according to claim 1, which is characterized in that institute
Stating submodule group further includes subelement frame, is arranged between the collector and the emitter, and in the subelement frame
It is fixedly installed the semiconductor chip and the hot-fluid and electric current conducting structure.
5. crimp type power semiconductor internal pressure distribution measurement system according to claim 4, which is characterized in that institute
Stating emitter includes:
Boss is connected with the hot-fluid and electric current conducting structure, and is arranged with the subelement frames match；
Emitter pole plate is connected with the boss.
6. crimp type power semiconductor internal pressure distribution measurement system according to claim 1, which is characterized in that institute
State crimp type power semiconductor internal pressure distribution measurement system further include:
Printed circuit board is connect with the submodule group and the emitter respectively；
Lead is connect with the printed circuit board；
Pressure sensor signal line is connect with the submodule group, the printed circuit board and the lead respectively.
7. crimp type power semiconductor internal pressure distribution measurement system according to claim 1, which is characterized in that institute
It is multiple for stating the quantity of submodule group.
8. crimp type power semiconductor internal pressure distribution measurement system described in any one of -7 according to claim 1,
It is characterized in that, the crimp type power semiconductor internal pressure distribution measurement system further includes ceramic cartridge, the pottery
Porcelain tube shell, the collector and emitter matching setting, form confined space.
9. crimp type power semiconductor internal pressure distribution measurement system according to claim 8, which is characterized in that institute
The crimp type power semiconductor internal pressure distribution measurement system stated further includes electrode flange, the electrode flange respectively with
The ceramic cartridge, the collector are connected with the emitter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910220725.4A CN109827693B (en) | 2019-03-22 | 2019-03-22 | Pressure-welding type power semiconductor device internal pressure distribution measuring system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910220725.4A CN109827693B (en) | 2019-03-22 | 2019-03-22 | Pressure-welding type power semiconductor device internal pressure distribution measuring system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109827693A true CN109827693A (en) | 2019-05-31 |
| CN109827693B CN109827693B (en) | 2023-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910220725.4A Active CN109827693B (en) | 2019-03-22 | 2019-03-22 | Pressure-welding type power semiconductor device internal pressure distribution measuring system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113447175A (en) * | 2021-06-29 | 2021-09-28 | 重庆大学 | Non-invasive crimping type power semiconductor device contact pressure monitoring method and system |
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| CN109827693B (en) | 2023-09-12 |
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