CN109827693B - Pressure-welding type power semiconductor device internal pressure distribution measuring system - Google Patents
Pressure-welding type power semiconductor device internal pressure distribution measuring system Download PDFInfo
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- CN109827693B CN109827693B CN201910220725.4A CN201910220725A CN109827693B CN 109827693 B CN109827693 B CN 109827693B CN 201910220725 A CN201910220725 A CN 201910220725A CN 109827693 B CN109827693 B CN 109827693B
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Abstract
The invention discloses a pressure-bonding type power semiconductor device internal pressure distribution measurement system, which comprises a collector, an emitter and a sub-module; the collector, the sub-module and the emitter are sequentially in contact connection; the sub-module is arranged between the collector and the emitter; the sub-module comprises a semiconductor chip, a heat flow and current conducting structure and a pressure sensor, and a collector, the semiconductor chip, the heat flow and current conducting structure and an emitter are sequentially in contact connection; the pressure sensor is respectively connected with the bottom surface and the end surface of the inner wall of the heat flow and current conducting structure in a contact way. The pressure distribution measuring system in the crimping type power semiconductor device can reduce the requirement on the pressure sensor, realize accurate measurement of the pressure distribution condition of the chip under any working condition, and break through the limitation of the conventional measuring method in measurement under normal working conditions.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a pressure distribution measuring system in a crimping type power semiconductor device.
Background
With the development of flexible direct current transmission technology, IGBT (Insulated Gate BipolarTransistor ) devices are becoming more and more important as key devices in converter valves and circuit breakers. In recent years, an IGBT device in a crimping packaging mode appears, and compared with a traditional welding type IGBT module, the IGBT device has the advantages of being high in power density, high in reliability, easy to connect in series, easy to fail, short-circuit and the like, and is gradually applied to occasions of high-voltage high-power transmission.
The crimping IGBT device keeps close contact among all components through external pressure, and forms an electric conduction and heat conduction path. And the chip generates heat to lead the polar plate to warp, so that the pressure distribution condition of each chip is changed, the temperature distribution and the current distribution are further influenced, and the service life of the chip and the reliability of devices are influenced. Therefore, measurement of the pressure profile of each chip is one of the most interesting issues in crimping device applications.
Because the crimping packaging form is quite novel, the method for measuring the pressure distribution of the chip inside the crimping IGBT device is not perfect. The current methods for measuring the pressure distribution of each chip in the crimping device mainly comprise two methods:
1) The pressure paper measuring method comprises the following steps: by arranging the pressure measuring film in the device, the pressure distribution condition of each chip can be measured, but the pressure measuring film is not conductive, so that the pressure distribution condition of the device under the non-working condition can only be obtained, and the pressure distribution condition of the chip when the temperature rises can not be obtained.
2) The pressure sensor is arranged outside the device: for a single chip device, a pressure sensor can be arranged outside the device to obtain the average pressure of the chip in real time. For a multi-chip device, arranging a pressure sensor outside the device can obtain the average pressure of the device in real time, but cannot obtain the pressure distribution condition of each chip. If the pressure sensor is arranged in the device, the applied pressure sensor is required to have good conductive characteristics, and meanwhile, high measurement accuracy can be kept under the high-current and high-temperature environment, namely, the requirement on the pressure sensor is high.
Disclosure of Invention
The invention aims to provide a pressure-connection type power semiconductor device internal pressure distribution measurement system which can reduce the requirement on a pressure sensor and realize the measurement of the chip pressure distribution condition under any working condition.
In order to achieve the above object, the present invention provides the following solutions:
a pressure-bonding type power semiconductor device internal pressure distribution measurement system comprises a collector, an emitter and a sub-module; the collector electrode, the sub-module and the emitter electrode are sequentially in contact connection; the sub-module is arranged between the collector and the emitter;
the sub-module comprises a semiconductor chip, a heat flow and current conducting structure and a pressure sensor, and the collector, the semiconductor chip, the heat flow and current conducting structure and the emitter are sequentially in contact connection; the pressure sensor is respectively in contact connection with the bottom surface and the end surface of the inner wall of the heat flow and current conducting structure.
Optionally, the heat flow and current conduction structure comprises two silver gaskets and an insulating gasket, the two silver gaskets are connected at a set angle, the insulating gasket is connected with the inner side of the silver gasket in a contact manner, and the pressure sensor is connected with the insulating gasket in a contact manner.
Optionally, the sub-module further includes:
the first molybdenum sheet is respectively connected with the collector electrode and the semiconductor chip in a contact way;
and the second molybdenum sheet is respectively in contact connection with the semiconductor chip and the heat flow and current conduction structure.
Optionally, the sub-module further includes a sub-unit frame disposed between the collector and the emitter, and the semiconductor chip and the heat flow and current conduction structure are fixedly disposed in the sub-unit frame.
Optionally, the emitter includes:
the boss is in contact connection with the heat flow and current conducting structure and is matched with the subunit frame;
and the emitter electrode plate is in contact connection with the boss.
Optionally, the pressure-welding type power semiconductor device internal pressure distribution measurement system further includes:
a printed circuit board connected to the sub-module and the emitter, respectively;
a lead wire connected to the printed circuit board;
and the pressure sensor signal wire is respectively connected with the sub-module, the printed circuit board and the lead.
Optionally, the number of the sub-modules is a plurality.
Optionally, the pressure-welding type power semiconductor device internal pressure distribution measurement system further comprises a ceramic tube shell, and the ceramic tube shell, the collector electrode and the emitter electrode are arranged in a matching mode to form a closed space.
Optionally, the pressure-welding type power semiconductor device internal pressure distribution measuring system further comprises an electrode flange, and the electrode flange is respectively connected with the ceramic tube shell, the collector and the emitter.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the invention provides a pressure-connection type power semiconductor device internal pressure distribution measurement system which comprises a collector, an emitter, a semiconductor chip, a heat flow and current conduction structure and a pressure sensor, wherein the pressure sensor is arranged in the heat flow and current conduction structure, and the heat flow and current conduction structure is arranged to ensure that the heat flow and the current do not flow through the pressure sensor any more, so that the requirement on the measurement accuracy of the pressure sensor in a high-current and high-temperature environment is not required, namely the requirement on the pressure sensor is reduced, the influence of the measurement structure on a measurement result is reduced, and further, the pressure distribution situation of each chip under any working condition can be obtained, and the limitation of the measurement of the existing measurement method under the normal working condition is broken through.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of an internal structure of a pressure distribution measurement system in a crimping type power semiconductor device according to an embodiment of the present invention;
FIG. 2 is an enlarged schematic view of a part of an internal structure of a pressure distribution measurement system in a crimping type power semiconductor device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing the sensor distribution of the pressure distribution measurement system in the crimping type power semiconductor device according to the embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating an assembling method of a measurement structure of an internal pressure distribution measurement system of a pressure-bonded power semiconductor device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an alternative structure of a silver gasket of a pressure distribution measurement system in a crimping type power semiconductor device according to an embodiment of the present invention;
fig. 6 is a schematic diagram of heat flow and current conduction in a conduction structure of a pressure distribution measurement system in a pressure-bonded power semiconductor device according to an embodiment of the present invention.
Description of the drawings: 1. a collector electrode; 2. a first molybdenum sheet; 3. a semiconductor chip; 4. a second molybdenum sheet; 5. a silver pad; 6. a boss; 7. a subunit frame; 8. a printed circuit board; 9. an emitter plate; 10. a pressure sensor; 11. an insulating heat insulating spacer; 12. a pressure sensor signal line; 13. an electrode flange; 14. a ceramic envelope; 15. a lead wire; 101. a first sub-module; 102. a second sub-module; 103. a third sub-module; 104. and a fourth sub-module.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a pressure-connection type power semiconductor device internal pressure distribution measuring system which can reduce the requirement on a pressure sensor 10 and realize the measurement of chip pressure distribution under any working condition.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Fig. 1 is a schematic diagram of a cross section of an internal structure of a pressure distribution measurement system in a pressure-bonded power semiconductor device according to an embodiment of the present invention, and as shown in fig. 1, the pressure distribution measurement system in a pressure-bonded power semiconductor device provided by the present invention includes a collector 1, an emitter, and a sub-module; the collector electrode 1, the sub-module and the emitter electrode are sequentially in contact connection; the sub-module is arranged between the collector 1 and the emitter;
the sub-module comprises a semiconductor chip 3, a heat flow and current conducting structure and a pressure sensor 10, wherein the collector electrode 1, the semiconductor chip 3, the heat flow and current conducting structure and an emitter electrode are sequentially in contact connection; the pressure sensor 10 is respectively connected with the bottom surface and the end surface of the inner wall of the heat flow and current conducting structure in a contact way.
The heat flow and current conducting structure in this embodiment is used to change the original current and heat flow paths of the device, so that the requirement on the measurement accuracy of the pressure sensor 10 in a high-current and high-temperature environment is not required.
In order to make the stress distribution of the semiconductor chip 3 more uniform, the invention is provided with a first molybdenum sheet 2 and a second molybdenum sheet 4 of a stress buffer area; the first molybdenum sheet 2 is respectively connected with the collector 1 and the semiconductor chip 3 in a contact way; the second molybdenum sheet 4 is in contact connection with the semiconductor chip 3 and the heat flow and current conducting structure, respectively.
Further, in order to fixedly provide the semiconductor chip 3 and the heat flow and current conducting structure, the semiconductor chip 3 and the heat flow and current conducting structure are provided within a subunit frame 7.
The emitter of the pressure-welding type power semiconductor device internal pressure distribution measuring system provided by the invention comprises a boss 6 and an emitter polar plate 9; the boss 6 is in contact connection with the heat flow and current conducting structure, and is matched with the subunit frame 7, so that the boss 6 realizes the supporting and positioning functions of the subunit module.
In a specific embodiment, the pressure distribution measuring system in the crimping type power semiconductor device provided by the invention further comprises a printed circuit board 8, a lead 15 and a pressure sensor signal wire 12; wherein the printed circuit board 8 is connected to the sub-module and the emitter, respectively; the lead 15 is connected with the printed circuit board 8; the pressure sensor signal wire 12 is respectively connected with the sub-module, the printed circuit board 8 and the lead 15; wherein the printed circuit board 8 is in physical contact with the sub-modules and the emitters, i.e. the printed circuit board 8 and the leads 15 are used for providing gate drive signals and are not in the main electrical loop, and the circuit board is empty at the location of the sub-modules.
In order to prevent the device from external pollution, the pressure-welding type power semiconductor device internal pressure distribution measuring system provided by the embodiment further comprises a ceramic tube shell 14, wherein the ceramic tube shell 14, the collector electrode 1 and the emitter electrode are arranged in a matching mode to form a closed space, and in order to ensure stable connection of the closed space, an electrode flange 13 is further arranged, and the electrode flange 13 is respectively connected with the ceramic tube shell 14, the collector electrode 1 and the emitter electrode.
Fig. 2 is an enlarged partial schematic view of an internal structure of a pressure distribution measurement system in a crimping type power semiconductor device according to an embodiment of the present invention. The heat flow and current conduction structure comprises two silver gaskets 5 and an insulating gasket 11, wherein the two silver gaskets 5 are connected at a set angle, the insulating gasket 11 is respectively in contact connection with the inner sides of the silver gaskets 5, and the pressure sensor 10 is in contact connection with the insulating gasket 11. Silver pads 5 are in contact with the first molybdenum sheet 2 and the boss 6, respectively. By utilizing the characteristics of the silver gasket 5, such as good thermal conductivity and electrical conductivity, and the heat insulating gasket 11, the heat flow and current no longer flow in the vertical direction, but flow from the second molybdenum sheet 4 to the boss 6 along the surface of the silver gasket 5, and no longer flow through the pressure sensor 10, as shown in fig. 6, thereby achieving the purpose of changing the heat flow and current conduction paths.
The two silver pads 5 in the heat flow and current conducting structure may be connected by contact, welding, or the like, or may be connected as two parts of the same whole, as shown in fig. 5, a box-shaped structure with an opening at one side or other similar flow guiding structures may be considered as a connection manner of the two silver pads 5, and the upper and lower surfaces thereof are the two silver pads 5.
Furthermore, the number of the sub-modules in the pressure distribution measuring system in the crimping type power semiconductor device provided by the invention is multiple, and as can be seen from fig. 3 and 4, the sub-modules are arranged in parallel, so that the pressure distribution condition of each chip in any working condition in the crimping type power semiconductor device can be obtained in real time.
The pressure sensor 10 is arranged in a heat flow and current conducting structure, and the heat flow and current conducting structure is arranged to ensure that the heat flow and the current no longer flow through the pressure sensor 10, so that the requirement on the measurement accuracy of the pressure sensor 10 in a high-current and high-temperature environment is not required, namely the requirement on the pressure sensor 10 is reduced, the influence of the measurement structure on the measurement result is reduced, further, the pressure distribution condition of each chip under any working condition can be realized, the original structure is fully utilized, the operation is simple and convenient, and the influence of the measurement structure on the measurement result is reduced.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (7)
1. The pressure distribution measuring system in the pressure-bonded power semiconductor device is characterized by comprising a collector, an emitter and a sub-module; the collector electrode, the sub-module and the emitter electrode are sequentially in contact connection; the sub-module is arranged between the collector and the emitter;
the sub-module comprises a semiconductor chip, a heat flow and current conducting structure and a pressure sensor, and the collector, the semiconductor chip, the heat flow and current conducting structure and the emitter are sequentially in contact connection; the pressure sensor is respectively in contact connection with the bottom surface and the end surface of the inner wall of the heat flow and current conducting structure;
the heat flow and current conduction structure comprises two silver gaskets and an insulating gasket, wherein the two silver gaskets are connected at a set angle, the insulating gasket is in contact connection with the inner side of the silver gasket, and the pressure sensor is in contact connection with the insulating gasket;
the sub-module further comprises:
the first molybdenum sheet is respectively connected with the collector electrode and the semiconductor chip in a contact way;
and the second molybdenum sheet is respectively in contact connection with the semiconductor chip and the heat flow and current conduction structure.
2. The pressure-bonded power semiconductor device internal pressure distribution measurement system according to claim 1, wherein the sub-assembly further comprises a sub-unit frame disposed between the collector and the emitter, and the semiconductor chip and the heat flow and current conduction structure are fixedly disposed in the sub-unit frame.
3. The crimping type power semiconductor device internal pressure distribution measurement system according to claim 2, wherein the emitter includes:
the boss is in contact connection with the heat flow and current conducting structure and is matched with the subunit frame;
and the emitter electrode plate is in contact connection with the boss.
4. The pressure-bonded power semiconductor device internal pressure distribution measurement system according to claim 1, further comprising:
a printed circuit board connected to the sub-module and the emitter, respectively;
a lead wire connected to the printed circuit board;
and the pressure sensor signal wire is respectively connected with the sub-module, the printed circuit board and the lead.
5. The crimping type power semiconductor device internal pressure distribution measuring system according to claim 1, wherein the number of the sub-modules is plural.
6. The pressure distribution measurement system according to any one of claims 1 to 5, further comprising a ceramic envelope, wherein the ceramic envelope, the collector and the emitter are arranged in a matching manner to form a closed space.
7. The pressure distribution measurement system in a pressure-bonded power semiconductor device according to claim 6, further comprising electrode flanges connected to the ceramic package, the collector and the emitter, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910220725.4A CN109827693B (en) | 2019-03-22 | 2019-03-22 | Pressure-welding type power semiconductor device internal pressure distribution measuring system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910220725.4A CN109827693B (en) | 2019-03-22 | 2019-03-22 | Pressure-welding type power semiconductor device internal pressure distribution measuring system |
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| CN109827693A CN109827693A (en) | 2019-05-31 |
| CN109827693B true CN109827693B (en) | 2023-09-12 |
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| CN113447175B (en) * | 2021-06-29 | 2023-07-11 | 重庆大学 | Non-invasive crimping type power semiconductor device contact pressure monitoring method and system |
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