CN102163928A - Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine - Google Patents
Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine Download PDFInfo
- Publication number
- CN102163928A CN102163928A CN2011100064546A CN201110006454A CN102163928A CN 102163928 A CN102163928 A CN 102163928A CN 2011100064546 A CN2011100064546 A CN 2011100064546A CN 201110006454 A CN201110006454 A CN 201110006454A CN 102163928 A CN102163928 A CN 102163928A
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- Prior art keywords
- copper
- clad plate
- layer
- aluminum nitride
- aluminium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
The invention provides a special ultrahigh-power rectification power electronic device module for an ultrasonic welding machine, comprising a copper base plate, an aluminum nitride ceramic copper-clad plate and an ultra-fast recovery diode chip. The aluminum nitride ceramic copper-clad plate is formed by compounding a silver copper alloy layer, an aluminum nitride insulating layer and a copper aluminum alloy layer; and the upper end surface of the ultra-fast recovery diode chip is in sintered connection with the silver copper alloy layer through a copper wire rope, and the lower end surface of the ultra-fast recovery diode chip is orderly provided with a protective layer molybdenum sheet and an electrode sheet; and the ultra-fast recovery diode chip, the protective-layer molybdenum sheet and the electrode sheet are sintered on the silver copper alloy layer. The aluminum nitride ceramic copper-clad plate is sintered on the copper base plate, and a net-like radiating structure is arranged below the copper base plate. As the upper surface and the lower surface of the aluminum nitride ceramic copper-clad plate have excellent conductive and radiating performances, and excellent welding performance, and the middle part of the aluminum nitride ceramic copper-clad plate is insulated, the aluminum nitride ceramic copper-clad plate has fast heat transferring rate, fast thermal conductivity and small thermal expansion coefficient; and when the aluminum nitride ceramic copper-clad plate is conducted into large current and heated up, the deformation amount is little; the net-like radiating structure is arranged at the bottom for radiating; moreover, the usage amount of the copper is reduced, and the limiting current can reach 3500 A, thereby meeting requirements of an ultra-large welding machine.
Description
Technical field
The present invention relates to a kind of three-phase rectification power electronic device module, relate in particular to and the matching used dedicated three-phase rectification of ultrasonic welding machine power electronic device module.
Background technology
The rated current of the employed three-phase rectification power electronic device module of ultrasonic welding machine is all below 1000A at present, development along with extraordinary ultrasonic welding machine, press for the three-phase rectification power electronic device module of super high power, this will increase substantially its rated current, yet estimated current is also very unstable greater than the product quality of the high-power of 1000A and the super high power three phase rectifier module more than the 3000A, say that strictly existing super high power three phase rectifier module can't satisfy the design needs of supersonic welder.The existing following three phase rectifier module of 1000A all comprises six silicon diodes, they press the rectified three-phase circuit connection, promptly are divided into three groups, after two series connection, again by after the negative electrode parallel connection of three diodes the positive pole of DC power supply, in addition the anode of three diodes in parallel the negative pole of DC power supply.Each silicon diode is by the red copper base plate; insulation board; electrode slice; the protective layer molybdenum sheet; silicon and conductor are formed; silicon; the protective layer molybdenum sheet; electrode slice; all be sintered into one between insulation board and the copper heating panel by silver-colored tin; rigidly connected between silicon and the insulation board by whole copper sheet conductor; insulation board is a beryllium oxide; beryllium oxide not only has very strong toxicity; long-term contact damages people's cognition; and its coefficient of expansion and silicon differ greatly; beryllium oxide and silicon are crossed welding manner with the conductor dbus of rigidity to be coupled together; its deflection is very big after the big electric current of feeding is heated; very easily draw the damage silicon; cause voltage breakdown; in order to overcome this deficiency; people have specially set up the protective layer molybdenum sheet that can reduce insulation board temperature distortion amount at the beryllium oxide upper surface; even so; the magnitude of current that can increase is limited; when the electric current that passes through is increased to 1000A when above; the protective layer molybdenum sheet is then inoperative, and the three phase rectifier electric apparatus spare module of this structure can't realize to big sense of current development.
Summary of the invention
The object of the present invention is to provide the special-purpose super high power rectification of a kind of ultrasonic welding machine power electronic device module.
The special-purpose super high power rectification of ultrasonic welding machine of the present invention power electronic device module; it comprises the red copper base plate; the aluminium nitride ceramics copper-clad plate; the three-phase bridge rectifier circuit that connects into by six Ultrafast recovery diode chips; three exchange binding post; two direct current binding posts; internal electrode; the copper wire clue; layer of silica gel; epoxy resin layer and plastic casing; described aluminium nitride ceramics copper-clad plate is a three-layer composite structure; it is by the yellow gold layer; aluminium nitride insulating barrier and albronze layer are composited; fixedly connected by silver-colored tin sintering processing with the yellow gold layer in the aluminium nitride ceramics copper-clad plate by the copper wire clue in the upper surface of Ultrafast recovery diode chip; lower surface at the Ultrafast recovery diode chip is provided with protective layer molybdenum sheet and electrode slice successively; the three is fixed on the yellow gold layer in the aluminium nitride ceramics copper-clad plate by silver-colored tin sintering processing; the albronze layer of aluminium nitride ceramics copper-clad plate is fixed on the red copper base plate by silver-colored tin sintering processing, is provided with netted radiator structure below the red copper base plate.
Owing to change insulating barrier into form composite board by original beryllium oxide insulating barrier by Kufil layer, aluminium nitride insulating barrier and albronze layer, wherein, Kufil layer and albronze layer had both had excellent conduction heat dispersion, has good welding performance again, and aluminium nitride is excellent insulating barrier, it not only has excellent insulation property, and avirulence, can not produce any injury to human body, it is fast that it also has heat transfer heat conduction, thermal coefficient of expansion is little, and its deflection is less after the big electric current of feeding is heated; Ask for for the copper conductor of integral type with red copper wire, thoroughly eliminate silicon and draw the damage phenomenon, set up netted radiator structure in the bottom and be more conducive to heat radiation, and can reduce the red copper consumption, its limiting current can reach 3500A, can satisfy the needs of super large welding machine.
Description of drawings:
Fig. 1, Fig. 2 are the structural representation of three-phase rectification power electronic device module;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the rectified three-phase circuit figure of six Ultrafast recovery diode chips;
Fig. 4 is the syndeton schematic diagram of Ultrafast recovery diode chip;
Among the figure: 1-red copper base plate; The copper-clad plate of 2-aluminium nitride ceramics; 3-Ultrafast recovery diode chip; 4-exchanges binding post; 5-direct current binding post; The 6-internal electrode; 7-copper wire clue; The 8-layer of silica gel; The 9-epoxy resin layer; The 10-plastic casing; 11-protective layer molybdenum sheet; The 12-electrode slice; 21-yellow gold layer; 22-aluminium nitride insulating barrier; 23-albronze layer.
Embodiment:
Below in conjunction with description of drawings the specific embodiment of the present invention:
The special-purpose super high power rectification of ultrasonic welding machine of the present invention power electronic device module; as Fig. 1～shown in Figure 4; it comprises red copper base plate 1; aluminium nitride ceramics copper-clad plate 2; the three-phase bridge rectifier circuit that connects into by six Ultrafast recovery diode chips 3; three exchange binding post 4; two direct current binding posts 5; internal electrode 6; copper wire clue 7; layer of silica gel 8; epoxy resin layer 9 and plastic casing 10; described aluminium nitride ceramics copper-clad plate 2 is a three-layer composite structure; it is by yellow gold layer 21; aluminium nitride insulating barrier 22 and albronze layer 23 are composited; fixedly connected by silver-colored tin sintering processing with the yellow gold layer 21 in the aluminium nitride ceramics copper-clad plate 2 by copper wire clue 7 in the upper surface of Ultrafast recovery diode chip 3; be provided with protective layer molybdenum sheet 11 and electrode slice 12 successively in the lower surface of Ultrafast recovery diode chip 3; the three is fixed on the yellow gold layer 21 in the aluminium nitride ceramics copper-clad plate 2 by silver-colored tin sintering processing; the albronze layer 23 of aluminium nitride ceramics copper-clad plate 2 is fixed on the red copper base plate 1 by silver-colored tin sintering processing, is provided with netted radiator structure below red copper base plate 1.
Claims (1)
1. the special-purpose super high power rectification of ultrasonic welding machine power electronic device module; it is characterized in that: it comprises red copper base plate (1); aluminium nitride ceramics copper-clad plate (2); the three-phase bridge rectifier circuit that connects into by six Ultrafast recovery diode chips (3); three exchange binding post (4); two direct current binding posts (5); internal electrode (6); copper wire clue (7); layer of silica gel (8); epoxy resin layer (9) and plastic casing (10); described aluminium nitride ceramics copper-clad plate (2) is a three-layer composite structure; it is by yellow gold layer (21); aluminium nitride insulating barrier (22) and albronze layer (23) are composited; fixedly connected by silver-colored tin sintering processing with the yellow gold layer (21) in the aluminium nitride ceramics copper-clad plate (2) by copper wire clue (7) in the upper surface of Ultrafast recovery diode chip (3); be provided with protective layer molybdenum sheet (11) and electrode slice (12) successively in the lower surface of Ultrafast recovery diode chip (3); the three is fixed on the yellow gold layer (21) in the aluminium nitride ceramics copper-clad plate (2) by silver-colored tin sintering processing; the albronze layer (23) of aluminium nitride ceramics copper-clad plate (2) is fixed on the red copper base plate (1) by silver-colored tin sintering processing, is provided with netted radiator structure below red copper base plate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100064546A CN102163928A (en) | 2011-01-13 | 2011-01-13 | Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100064546A CN102163928A (en) | 2011-01-13 | 2011-01-13 | Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine |
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|---|---|
| CN102163928A true CN102163928A (en) | 2011-08-24 |
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| CN2011100064546A Pending CN102163928A (en) | 2011-01-13 | 2011-01-13 | Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339808A (en) * | 2011-10-28 | 2012-02-01 | 无锡红光微电子有限公司 | Packaging lead frame structure |
| CN103904172A (en) * | 2014-03-19 | 2014-07-02 | 浙江竞达齐泰科技有限公司 | Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature |
| CN106298685A (en) * | 2016-09-29 | 2017-01-04 | 中国船舶重工集团公司第七〇九研究所 | A kind of electronic chip packaging structure using ultrasonic bonding |
| CN107452723A (en) * | 2017-07-26 | 2017-12-08 | 济南市半导体元件实验所 | A kind of high-power silicon carbide schottky rectifier bridge and preparation method thereof |
| CN110165545A (en) * | 2019-05-06 | 2019-08-23 | 江苏稳润光电科技有限公司 | A kind of high power laser light device and preparation method thereof |
-
2011
- 2011-01-13 CN CN2011100064546A patent/CN102163928A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339808A (en) * | 2011-10-28 | 2012-02-01 | 无锡红光微电子有限公司 | Packaging lead frame structure |
| CN103904172A (en) * | 2014-03-19 | 2014-07-02 | 浙江竞达齐泰科技有限公司 | Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature |
| CN106298685A (en) * | 2016-09-29 | 2017-01-04 | 中国船舶重工集团公司第七〇九研究所 | A kind of electronic chip packaging structure using ultrasonic bonding |
| CN106298685B (en) * | 2016-09-29 | 2019-01-04 | 中国船舶重工集团公司第七一九研究所 | A kind of electronic chip packaging structure using ultrasonic bonding |
| CN107452723A (en) * | 2017-07-26 | 2017-12-08 | 济南市半导体元件实验所 | A kind of high-power silicon carbide schottky rectifier bridge and preparation method thereof |
| CN107452723B (en) * | 2017-07-26 | 2023-09-15 | 济南市半导体元件实验所 | High-voltage high-power silicon carbide Schottky rectifier bridge and preparation method thereof |
| CN110165545A (en) * | 2019-05-06 | 2019-08-23 | 江苏稳润光电科技有限公司 | A kind of high power laser light device and preparation method thereof |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110824 |