CN102610737A - Heat-radiating device of high-power LED (Light Emitting Diode) - Google Patents
Heat-radiating device of high-power LED (Light Emitting Diode) Download PDFInfo
- Publication number
- CN102610737A CN102610737A CN2012100760392A CN201210076039A CN102610737A CN 102610737 A CN102610737 A CN 102610737A CN 2012100760392 A CN2012100760392 A CN 2012100760392A CN 201210076039 A CN201210076039 A CN 201210076039A CN 102610737 A CN102610737 A CN 102610737A
- Authority
- CN
- China
- Prior art keywords
- heat
- radiating device
- power led
- thermal conductivity
- conductivity layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a heat-radiating device of a high-power LED (Light Emitting Diode). The heat-radiating device comprises a base; a high-heat-conductivity layer for increasing transverse heat conduction is arranged at the upper end of the base; an LED chip and a convex lens colloid are fixed on the high-heat-conductivity layer; the LED chip is connected with weld legs enwrapped in the base through conducting wires; the convex lens colloid is combined with the high-heat-conductivity layer so as to seal the LED chip and the conducting wires; and fin-shaped heat-radiating sheets are arranged at the lower end of the base. According to the heat-radiating device disclosed by the invention, the transverse heat conductivity is increased through the high-heat-conductivity layer, the effective area for longitudinal heat conduction is enlarged, the heat-radiating path is shortened, and the heat-radiating area between the heat-radiating device and air is increased, so that the heat resistance from the chip to air is obviously reduced, the temperature of a heat-generating electronic device is effectively lowered, the stability and reliability of the chip of the high-power LED can be greatly enhanced, and the service life of the high-power LED is prolonged; and the heat-radiating device of the high-power LED has a simple structure, and the base is made of plastics, so that the heat-radiating device has the advantages of cost conservation, convenience in manufacture, increase in the safety performance of the high-power LED, and convenience in widespread application.
Description
Technical field
The present invention relates to a kind of heat abstractor, especially a kind of high-power LED heat radiating device.
Background technology
LED is a kind of injection electroluminescence device; But the LED photoelectric conversion efficiency is still not high enough at present; 15% ~ 30% the electric energy of only having an appointment is converted into luminous energy output; All the other all convert heat energy into, and the led chip junction temperature rose when this directly caused work, cause that the lost of life, thermal stress are concentrated, degradation problem under chip light emitting efficient and the fluorescent material launching efficiency.Therefore, heat radiation becomes a key factor of its development of restriction.
In the existing high-power LED encapsulation radiator structure, led chip generally is fixed on the heating panel, and the heat that led chip produces vertically conducts to heating panel earlier, carries out convection current and heat loss through radiation through heating panel and air again.But cooling plate structure is complicated in the existing application product, and operation is various, has increased the thermal resistance of led chip to air, and heat can't effectively be delivered in the air.
The patent No. is that 201010160082.8 Chinese invention patent discloses " heat radiator with composite structure and preparation method thereof "; Utilize the high advantage of in-plane thermal conductivity of flexible graphite material to cooperate and optimized the heat conducting structure, form good three-dimensional heat dissipation effect with expanded graphite composite material high heat capacity performance.It is low that but the radiator of graphite moulding is prone to embrittlement, bending resistance and tensile strength, and graphite is conductor, is easy to generate the danger of electric leakage, in practical application, has significant limitation.
Summary of the invention
The technical problem that the present invention mainly solves is: a kind of simple in structure, perfect heat-dissipating, reliability and the high high-power LED heat radiating device of security performance are provided.
For solving the problems of the technologies described above, the technical scheme that the present invention adopted is:
A kind of high-power LED heat radiating device; Comprise pedestal; Said pedestal upper end be provided with one be used to increase horizontal heat conduction high thermal conductivity layer, be fixed with led chip and convex lens colloid on the said high thermal conductivity layer, said led chip is connected with leg in being wrapped in said pedestal through lead; Said convex lens colloid combines with high thermal conductivity layer said led chip and lead sealing, and said pedestal lower end is provided with the fin of fin-shaped shape.
Further as preferred embodiment, the high thermal conductivity layer zone that is positioned at convex lens colloid below is overseas except the crystal bonding area of led chip, on high thermal conductivity layer, be coated with one be used to increase the led chip light extraction efficiency the reflector.
Further as preferred embodiment, said high thermal conductivity layer is processed by graphite material with high thermal conductivity or metal material, and the thermal conductivity of said high thermal conductivity layer is 400W/mK ~ 2000W/mK.
Further as preferred embodiment, said metal material is copper or silver.
Further as preferred embodiment, the thickness of said high thermal conductivity layer is 0.1 ~ 0.3mm.
Further as preferred embodiment, said pedestal is that plastics are processed.
The invention has the beneficial effects as follows: the present invention adopts high thermal conductivity layer to strengthen the horizontal heat-conducting effect of led chip; Effectively enlarge vertical conduction surface of heat abstractor, shortened heat dissipation path, increased area of dissipation; Thereby obviously reduced chip to the air thermal resistance; Effectively reduce the temperature of heating electronic device, make that the stability of high-power LED chip and reliability are greatly strengthened, and prolonged its useful life; Further, be provided with the fin of fin-shaped shape in the pedestal lower end, can increase cross-ventilation and heat loss through radiation area.And the present invention is simple in structure, and pedestal adopts plastics to process, and has reduced cost, and is easy to process, and improved the safety of products performance, is convenient to extensive use.
Description of drawings
Be described further below in conjunction with the accompanying drawing specific embodiments of the invention:
Fig. 1 is the structural representation of high-power LED heat radiating device of the present invention.
Embodiment
With reference to Fig. 1; A kind of high-power LED heat radiating device comprises pedestal 1, pedestal 1 upper end be provided with one be used to increase horizontal heat conduction high thermal conductivity layer 13; Be fixed with led chip 2 and convex lens colloid 3 on the high thermal conductivity layer 13; Led chip 2 is connected with leg 12 in being wrapped in said pedestal 1 through lead 4, and said convex lens colloid 3 combines with high thermal conductivity layer 13 said led chip 2 and lead 4 are sealed, and said pedestal 1 lower end is provided with the fin 11 of fin-shaped shape.
In specific embodiment; Led chip 2 is fixed on the high thermal conductivity layer 13 through welding, heat conduction elargol or other modes; High thermal conductivity layer 13 is processed by graphite material with high thermal conductivity or metal material, and the thermal conductivity of high thermal conductivity layer 13 is 400W/mK ~ 2000W/mK.The present invention has strengthened the horizontal heat conduction of heat abstractor through in pedestal 1 upper end high thermal conductivity layer 13 being set, thereby has avoided led chip central authorities temperature to rise sharply, and has enlarged area of dissipation longitudinally, has improved heat dispersion.High thermal conductivity layer 13 can adopt the graphite material with high thermal conductivity to process, and also can adopt metal material, and for example copper, silver etc. are processed, and to strengthen the horizontal capacity of heat transmission of heat abstractor, preferably, the thickness of high thermal conductivity layer 13 is 0.1 ~ 0.3mm.
Preferably; Said pedestal 1 adopts plastics to process; Because the heat-conducting plastic cost is low, machine-shaping is convenient, and can guarantee good heat-conducting, and avoided adopting the danger of electric leakage easily of metal fin; Improved the safety of products performance, the radiator that has also overcome the graphite moulding is prone to embrittlement, bending resistance and the low defective of tensile strength.
Preferably, the high thermal conductivity layer zone that is positioned at convex lens colloid 3 belows is overseas except the crystal bonding area of led chip 2, on height thermosphere 13, be coated with one be used to increase led chip 2 light extraction efficiencies reflector 14.
More than be that preferred embodiment of the present invention is specified; But the invention is not limited to said embodiment; Those of ordinary skill in the art can also make all equivalent variations or replacement under the prerequisite of spirit of the present invention, distortion that these are equal to or replacement all are included in the application's claim institute restricted portion.
Claims (6)
1. high-power LED heat radiating device; Comprise pedestal (1); It is characterized in that: said pedestal (1) upper end be provided with one be used to increase horizontal heat conduction high thermal conductivity layer (13); Be fixed with led chip (2) and convex lens colloid (3) on the said high thermal conductivity layer (13); Said led chip (2) is connected through lead (4) leg (12) interior with being wrapped in said pedestal (1), and said convex lens colloid (3) combines with high thermal conductivity layer (13) said led chip (2) and lead (4) sealing, and said pedestal (1) lower end is provided with the fin (11) of fin-shaped shape.
2. a kind of high-power LED heat radiating device according to claim 1; It is characterized in that: the high thermal conductivity layer zone that is positioned at convex lens colloid (3) below is overseas except the crystal bonding area of led chip (2), on height thermosphere (13), be coated with one be used to increase led chip (2) light extraction efficiency reflector (14).
3. a kind of high-power LED heat radiating device according to claim 2; It is characterized in that: said high thermal conductivity layer (13) is processed by graphite material with high thermal conductivity or metal material, and the thermal conductivity of said high thermal conductivity layer (13) is 400W/mK ~ 2000W/mK.
4. a kind of high-power LED heat radiating device according to claim 3 is characterized in that: said metal material is copper or silver.
5. a kind of high-power LED heat radiating device according to claim 2 is characterized in that: the thickness of said high thermal conductivity layer (13) is 0.1 ~ 0.3mm.
6. a kind of high-power LED heat radiating device according to claim 2 is characterized in that: said pedestal (1) is processed for plastics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100760392A CN102610737A (en) | 2012-03-21 | 2012-03-21 | Heat-radiating device of high-power LED (Light Emitting Diode) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100760392A CN102610737A (en) | 2012-03-21 | 2012-03-21 | Heat-radiating device of high-power LED (Light Emitting Diode) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102610737A true CN102610737A (en) | 2012-07-25 |
Family
ID=46527986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100760392A Pending CN102610737A (en) | 2012-03-21 | 2012-03-21 | Heat-radiating device of high-power LED (Light Emitting Diode) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102610737A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103415138A (en) * | 2013-08-06 | 2013-11-27 | 鑫茂电子（昆山）有限公司 | Circuit board capable of dissipating heat conveniently |
| CN103594614A (en) * | 2012-08-15 | 2014-02-19 | 品元企业股份有限公司 | Chip (wafer) heat radiation double metal post used for light source |
| WO2015032256A1 (en) * | 2013-09-06 | 2015-03-12 | Yung Pun Cheng | Floating heat sink support with copper sheets and led package assembly for led flip chip package |
| CN113170593A (en) * | 2018-11-22 | 2021-07-23 | 华为技术有限公司 | Packaging structure, processor and server |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100220483A1 (en) * | 2009-03-02 | 2010-09-02 | Everlight Electronics Co., Ltd. | Dissipation module for a light emitting device and light emitting diode device having the same |
| CN202025797U (en) * | 2011-03-16 | 2011-11-02 | 张申雄 | Copper-clad and carbon-based graphite heat-dissipating panel used in high-power LED |
| CN202103994U (en) * | 2011-05-16 | 2012-01-04 | 吴哲元 | Heat dissipation assembly structure |
| CN202101047U (en) * | 2011-04-22 | 2012-01-04 | 陈宝如 | High-power LED (light-emitting diode) light source module with excellent heat dissipation performance |
| CN102347437A (en) * | 2010-07-30 | 2012-02-08 | 欧司朗有限公司 | Electronic heating module and manufacturing method thereof |
| CN102354725A (en) * | 2011-10-29 | 2012-02-15 | 华南师范大学 | High-power light emitting diode with radiating substrate made of diamond-like film-copper composite material |
| CN202523767U (en) * | 2012-03-21 | 2012-11-07 | 广州市鸿利光电股份有限公司 | Big power LED heat radiation device |
-
2012
- 2012-03-21 CN CN2012100760392A patent/CN102610737A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100220483A1 (en) * | 2009-03-02 | 2010-09-02 | Everlight Electronics Co., Ltd. | Dissipation module for a light emitting device and light emitting diode device having the same |
| CN102347437A (en) * | 2010-07-30 | 2012-02-08 | 欧司朗有限公司 | Electronic heating module and manufacturing method thereof |
| CN202025797U (en) * | 2011-03-16 | 2011-11-02 | 张申雄 | Copper-clad and carbon-based graphite heat-dissipating panel used in high-power LED |
| CN202101047U (en) * | 2011-04-22 | 2012-01-04 | 陈宝如 | High-power LED (light-emitting diode) light source module with excellent heat dissipation performance |
| CN202103994U (en) * | 2011-05-16 | 2012-01-04 | 吴哲元 | Heat dissipation assembly structure |
| CN102354725A (en) * | 2011-10-29 | 2012-02-15 | 华南师范大学 | High-power light emitting diode with radiating substrate made of diamond-like film-copper composite material |
| CN202523767U (en) * | 2012-03-21 | 2012-11-07 | 广州市鸿利光电股份有限公司 | Big power LED heat radiation device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594614A (en) * | 2012-08-15 | 2014-02-19 | 品元企业股份有限公司 | Chip (wafer) heat radiation double metal post used for light source |
| CN103415138A (en) * | 2013-08-06 | 2013-11-27 | 鑫茂电子（昆山）有限公司 | Circuit board capable of dissipating heat conveniently |
| WO2015032256A1 (en) * | 2013-09-06 | 2015-03-12 | Yung Pun Cheng | Floating heat sink support with copper sheets and led package assembly for led flip chip package |
| US9379300B2 (en) | 2013-09-06 | 2016-06-28 | Yung Pun Cheng | Floating heat sink support with copper sheets and LED package assembly for LED flip chip package |
| CN113170593A (en) * | 2018-11-22 | 2021-07-23 | 华为技术有限公司 | Packaging structure, processor and server |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101408302A (en) | Light source module group with good heat radiating performance | |
| CN203481273U (en) | LED light source module based on AlSiC composite substrate | |
| CN104214739A (en) | High-power LED (light emitting diode) grapheme-based heat radiation device | |
| CN102610737A (en) | Heat-radiating device of high-power LED (Light Emitting Diode) | |
| CN201204203Y (en) | Radiating device for high-power LED | |
| JP3206038U (en) | Floating heat sink support with copper sheet and LED package assembly for LED flip chip package | |
| CN202523767U (en) | Big power LED heat radiation device | |
| CN205664140U (en) | Possesses lamp plate from heat radiation structure's LED | |
| CN203115921U (en) | Structure for heat conduction, heat accumulation and heat dissipation of LED lamp | |
| CN103247742B (en) | A kind of LED heat radiation substrate and manufacture method thereof | |
| CN202141020U (en) | Self-cooling LED (Light Emitting Diode) module structure | |
| CN201780997U (en) | Heat radiating structure used in LED chip | |
| CN203150615U (en) | High-efficiency heat-dissipation LED light source module | |
| CN202177080U (en) | LED (light-emitting diode) lamp device applying silicon-urethane foaming and radiating materials | |
| CN207011177U (en) | A kind of heat abstractor of high-power paster | |
| CN201946633U (en) | Light emitting diode (LED) radiating structure | |
| CN102777776A (en) | Aluminum oxide ceramic LED (light emitting diode) bulb lamp and manufacture method thereof | |
| CN203521476U (en) | LED packaging structure with high heat conduction performance | |
| CN202101201U (en) | Heat dissipation structure for high-power light-emitting diode (LED) | |
| CN203940252U (en) | A kind of chip directly pastes the LED light source module of heat pipe | |
| CN203225276U (en) | Led integrated light source module | |
| CN101666472A (en) | High-power LED composite aluminum substrate | |
| CN202616229U (en) | Liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device | |
| CN202797089U (en) | Novel heat tube type LED (light emitting diode) radiating device | |
| CN201827858U (en) | Heat-conducting insulated radiator for light emitting diode (LED) lamp and LED lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120725 |