CN103247742B - A kind of LED heat radiation substrate and manufacture method thereof - Google Patents
A kind of LED heat radiation substrate and manufacture method thereof Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 10
- 230000005855 radiation Effects 0.000 title claims 7
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 40
- 239000010432 diamond Substances 0.000 claims abstract description 40
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 23
- 238000005476 soldering Methods 0.000 claims description 6
- 229910017750 AgSn Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 3
- 239000012528 membrane Substances 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 32
- 238000005219 brazing Methods 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
一种LED散热基板及其制造方法，包括由金刚石-铜合金材料制成的基板主体，在基板主体上开设有凹槽，在凹槽内镶嵌有金刚石片，在金刚石片的上表面设有电极导线区和用于连接LED芯片的芯片连接层。本发明由于采用了将金刚石片与金刚石-铜合金材料制成的基板主体结合成LED散热基板的结构，有效地避免了现有的LED散热器因引入绝缘层而存在的散热瓶颈的问题，而且将金刚石片紧密地镶嵌在基板主体上开设的凹槽内，增加了金刚石片与基板主体的接触面积，使LED芯片传到金刚石片上的热量能快速地传导出去，同时金刚石片与基板主体、LED芯片与金刚石片分别通过钎焊的方式连接为一体，能够获得致密的合金界面，使界面的热导率高。
An LED heat dissipation substrate and a manufacturing method thereof, comprising a substrate body made of a diamond-copper alloy material, a groove is opened on the substrate body, a diamond sheet is embedded in the groove, and an electrode is arranged on the upper surface of the diamond sheet The wire area and the chip connection layer for connecting the LED chip. Because the present invention adopts the structure of combining the diamond sheet and the substrate body made of diamond-copper alloy material into an LED heat dissipation substrate, it effectively avoids the heat dissipation bottleneck problem of the existing LED heat sink due to the introduction of an insulating layer, and The diamond sheet is tightly embedded in the groove opened on the substrate body, which increases the contact area between the diamond sheet and the substrate body, so that the heat transmitted from the LED chip to the diamond sheet can be quickly conducted, and at the same time, the diamond sheet and the substrate body, LED The chip and the diamond sheet are respectively connected as a whole by brazing, so that a dense alloy interface can be obtained, and the thermal conductivity of the interface is high.
Description
技术领域 technical field
本发明属于LED热沉技术领域，具体是涉及一种高导热的LED散热基板及其制造方法。 The invention belongs to the technical field of LED heat sinks, and in particular relates to an LED heat dissipation substrate with high thermal conductivity and a manufacturing method thereof.
背景技术 Background technique
LED全称为半导体发光二极管，可直接将电能转化为光能。其特点是功耗低、高亮度、色彩艳丽、抗震动、寿命长、冷光源等特点。LED产品应用广泛，尤其是随着发光效率和功率的大幅增长，以LED为光源的各种产品已深入到各行各业。 The full name of LED is semiconductor light-emitting diode, which can directly convert electrical energy into light energy. It is characterized by low power consumption, high brightness, bright colors, anti-vibration, long life, cold light source and so on. LED products are widely used, especially with the substantial increase in luminous efficiency and power, various products using LED as light source have penetrated into all walks of life.
半导体器件通常对温度十分敏感，尤其是对于大功率LED来说，P-N结的温度上升非常明显，而许多应用又需要将多个大功率LED密集矩阵排列使用，其散热问题尤其明显。长时间发热或过高的温度会严重影响器件的效率、稳定性和使用寿命，散热问题是阻碍大功率LED照明应用迅速普及的一个技术难题。 Semiconductor devices are usually very sensitive to temperature, especially for high-power LEDs, the temperature rise of the P-N junction is very obvious, and many applications require multiple high-power LEDs to be arranged in a dense matrix, and the heat dissipation problem is particularly obvious. Prolonged heating or high temperature will seriously affect the efficiency, stability and service life of the device. The heat dissipation problem is a technical problem that hinders the rapid popularization of high-power LED lighting applications.
影响LED散热最关键的是芯片的热量能否快速地传到由铜或铝制成的金属散热器上而不存在散热通道瓶颈的问题。传统的功率LED封装一般是将芯片安装在热沉上，热沉又粘结在绝缘封装层上，绝缘封装层通过热界面材料粘结在散热器上。这种传统结构的粘结层、绝缘封装层的导热率都很低，是阻碍芯片散热的主要部分；另外，芯片热沉（常用金属Cu、Al、Al2O3或AlN等）以及散热器材料（常用Cu或Al等）的散热效果也有待进一步提高。 The most critical thing affecting LED heat dissipation is whether the heat of the chip can be quickly transferred to the metal heat sink made of copper or aluminum without the bottleneck of the heat dissipation channel. In traditional power LED packaging, the chip is generally mounted on a heat sink, and the heat sink is bonded to an insulating packaging layer, and the insulating packaging layer is bonded to the heat sink through a thermal interface material. The thermal conductivity of the bonding layer and insulating packaging layer of this traditional structure is very low, which is the main part that hinders the heat dissipation of the chip; in addition, the chip heat sink (commonly used metal Cu, Al, Al 2 O 3 or AlN, etc.) The heat dissipation effect of materials (usually Cu or Al, etc.) needs to be further improved.
专利号为ZL200810051719.2的中国专利公开了一种用金刚石膜作热沉材料的LED芯片基座及制作方法，是在Al2O3或AlN陶瓷基座上生长或焊接上金刚石膜，利用金刚石膜非常高的散热率（热导率1300～2000W/mk）将LED器件的热量加速传递出去。然而，这种方案中仍然涉及到散热性能稍差的Al2O3陶瓷（热导率18～20W/mk）或AlN陶瓷（热导率170～230W/mk），降低了散热效果。 The Chinese patent No. ZL200810051719.2 discloses a LED chip base using a diamond film as a heat sink material and a manufacturing method. The diamond film is grown or welded on an Al 2 O 3 or AlN ceramic base, and the diamond film is used to The very high heat dissipation rate of the film (thermal conductivity 1300-2000W/mk) accelerates the heat transfer of the LED device. However, this solution still involves Al 2 O 3 ceramics (thermal conductivity 18-20W/mk) or AlN ceramics (thermal conductivity 170-230W/mk) with poor heat dissipation performance, which reduces the heat dissipation effect.
发明内容 Contents of the invention
本发明的目的在于针对上述存在问题和不足，提供一种具有高热导率和低界面热阻，能够快速地将LED芯片产生的热量散发出去，且结构简单可靠、制造方便的LED散热基板及其制造方法。 The purpose of the present invention is to address the above problems and deficiencies, to provide a LED heat dissipation substrate with high thermal conductivity and low interface thermal resistance, which can quickly dissipate the heat generated by the LED chip, has a simple and reliable structure, and is easy to manufacture. Manufacturing method.
本发明的技术方案是这样实现的： Technical scheme of the present invention is realized like this:
本发明所述的LED散热基板，其特点是包括由金刚石-铜合金材料制成的基板主体，所述基板主体上开设有凹槽，所述凹槽内镶嵌有与基板主体通过钎焊的方式连接为一体的金刚石片，所述金刚石片的上表面设有电极导线区和用于连接LED芯片的芯片连接层，所述芯片连接层与LED芯片通过钎焊的方式连接为一体。 The LED heat dissipation substrate of the present invention is characterized in that it includes a substrate body made of diamond-copper alloy material, a groove is opened on the substrate body, and a soldering method with the substrate body is embedded in the groove. An integrally connected diamond sheet, the upper surface of the diamond sheet is provided with an electrode wire area and a chip connection layer for connecting the LED chip, and the chip connection layer and the LED chip are connected as a whole by brazing.
本发明所述的LED散热基板的制造方法，其特点是包括如下步骤。 The manufacturing method of the LED heat dissipation substrate according to the present invention is characterized in that it includes the following steps.
a、在金刚石-铜合金材料制成的基板主体上开设凹槽。 a. Opening grooves on the substrate body made of diamond-copper alloy material.
b、在凹槽内刷上钎料层A，并使刷有钎料层A的凹槽与准备放入该凹槽内的金刚石片能紧密接触。 b. Brush the brazing material layer A in the groove, and make the groove brushed with the brazing material layer A closely contact with the diamond sheet to be put into the groove.
c、在金刚石片的外表面镀上金属膜。 c. Coating a metal film on the outer surface of the diamond sheet.
d、将镀有金属膜的金刚石片镶嵌到刷有钎料层A的凹槽内与基板主体一起形成散热板结构。 d. Embedding the diamond sheet coated with the metal film into the groove brushed with the solder layer A together with the main body of the substrate to form a heat sink structure.
e、在金刚石片上表面的金属膜上用于贴合LED芯片的位置处刷上钎料层B。 e. Brush the solder layer B on the metal film on the upper surface of the diamond sheet at the position where the LED chip is pasted.
f、将LED芯片与钎料层B对正粘合。 f. Align and bond the LED chip and the solder layer B.
g、将贴有LED芯片的散热板结构放入钎焊炉中进行加热钎焊。 g. Put the heat dissipation plate structure with the LED chip into the brazing furnace for heating and brazing.
h、将焊好的散热板结构上的金刚石片上表面的金属膜通过光刻技术去除多余的部分，形成电极导线区和芯片连接层，从而完成LED散热基板的制造。 h. Remove the redundant part of the metal film on the upper surface of the diamond sheet on the welded heat dissipation plate structure by photolithography to form the electrode wire area and the chip connection layer, thereby completing the manufacture of the LED heat dissipation substrate.
其中，上述钎料层A和钎料层B为AgSn或AuSn或AgAuSn钎料层，厚度为10μm～50μm。 Wherein, the above-mentioned solder layer A and solder layer B are AgSn or AuSn or AgAuSn solder layers with a thickness of 10 μm˜50 μm.
上述金属膜为Au-Ti或Au-Cr或Ag-Ti或Ag-Cr双层金属膜，采用真空镀的方法制成，所述双层金属膜的总厚度为1μm～10μm。 The above-mentioned metal film is Au-Ti or Au-Cr or Ag-Ti or Ag-Cr double-layer metal film, which is made by vacuum plating, and the total thickness of the double-layer metal film is 1 μm to 10 μm.
本发明由于采用了将金刚石片与金刚石-铜合金材料制成的基板主体结合成LED散热基板的结构，极大地提高LED散热基板的热导率，其热导率是纯铜的1-3倍，而且采用金刚石片作为LED芯片直接接触的热沉，金刚石片是自然界热导率最高的材料，同时又是良好的绝缘体，从而有效地避免了现有的LED散热器因引入绝缘层而存在的散热瓶颈的问题，而且在基板主体上开设凹槽，将金刚石片紧密地镶嵌在凹槽内的结构设计，大大地增加了金刚石片与基板主体的接触面积，这样便可以将LED芯片传到金刚石片上的热量快速地传导出去，从而极大地提高LED芯片的散热效率，同时采用了金属膜作为连接层并通过钎焊的方式使金刚石片与基板主体、LED芯片与金刚石片连接为一体，从而能够获得致密的合金界面，有效地降低了界面热阻，界面热导率高。本发明去除了热阻高的绝缘层或粘结层，整个LED散热基板不存在热导率低的材料，并且连接界面热阻小，不存在散热瓶颈的问题。由于本发明所制作的LED散热基板的热导率高，因此可以有效提高产品的饱和电流和发光效率，同时能够提高产品的可靠性和寿命，特别适用于大功率LED或者集成电路散热板等电子器件的散热。 Because the present invention adopts the structure of combining the diamond sheet and the substrate body made of diamond-copper alloy material into the LED heat dissipation substrate, the thermal conductivity of the LED heat dissipation substrate is greatly improved, and its thermal conductivity is 1-3 times that of pure copper , and the diamond sheet is used as the heat sink in direct contact with the LED chip. The diamond sheet is the material with the highest thermal conductivity in nature and is also a good insulator, thus effectively avoiding the existence of the existing LED heat sink due to the introduction of an insulating layer. The problem of the heat dissipation bottleneck, and the groove is set on the main body of the substrate, and the structural design of the diamond sheet is tightly embedded in the groove, which greatly increases the contact area between the diamond sheet and the main body of the substrate, so that the LED chip can be transferred to the diamond. The heat on the chip is quickly conducted out, thereby greatly improving the heat dissipation efficiency of the LED chip. At the same time, the metal film is used as the connection layer and the diamond chip and the substrate body, the LED chip and the diamond chip are connected as one by brazing, so that The dense alloy interface is obtained, the interface thermal resistance is effectively reduced, and the interface thermal conductivity is high. The invention removes the insulating layer or bonding layer with high thermal resistance, the whole LED heat dissipation substrate does not have materials with low thermal conductivity, and the thermal resistance of the connection interface is small, so there is no heat dissipation bottleneck problem. Due to the high thermal conductivity of the LED heat dissipation substrate produced by the present invention, it can effectively improve the saturation current and luminous efficiency of the product, and at the same time improve the reliability and life of the product, and is especially suitable for electronic products such as high-power LEDs or integrated circuit heat dissipation plates. heat dissipation of the device.
下面结合附图对本发明作进一步的说明。 The present invention will be further described below in conjunction with the accompanying drawings.
附图说明 Description of drawings
图1为本发明只设有一个LED芯片的剖面结构示意图。 FIG. 1 is a schematic cross-sectional structure diagram of the present invention with only one LED chip.
图2为本发明设有多个LED芯片的剖面结构示意图。 FIG. 2 is a schematic cross-sectional structure diagram of a plurality of LED chips according to the present invention.
图3为本发明设有多个LED芯片的俯视图。 FIG. 3 is a top view of the present invention with multiple LED chips.
具体实施方式 Detailed ways
如图1-图3所示，本发明所述的LED散热基板，包括由金刚石-铜合金材料制成的基板主体1，在基板主体1上开设有凹槽11，在凹槽11内镶嵌有与基板主体1通过钎焊的方式连接为一体的金刚石片4，在金刚石片4的上表面设有电极导线区5和用于连接LED芯片8的芯片连接层6，所述芯片连接层6与LED芯片8通过钎焊的方式连接为一体。如图1所示，LED芯片8可以只设置有一个；如图2及图3所示，LED芯片8可以设置有多个，各个LED芯片8的排布和连接方式可以根据实际需要进行调整；而各LED芯片8与电极导线区5之间通过电极引线9电连接。 As shown in Figures 1 to 3, the LED heat dissipation substrate of the present invention includes a substrate body 1 made of diamond-copper alloy material, a groove 11 is opened on the substrate body 1, and a groove 11 is embedded in the groove 11. The diamond sheet 4 which is integrally connected with the substrate main body 1 by brazing is provided with an electrode wire area 5 and a chip connection layer 6 for connecting the LED chip 8 on the upper surface of the diamond sheet 4, and the chip connection layer 6 and The LED chip 8 is connected as a whole by soldering. As shown in Figure 1, only one LED chip 8 can be provided; as shown in Figure 2 and Figure 3, there can be multiple LED chips 8, and the arrangement and connection mode of each LED chip 8 can be adjusted according to actual needs; Each LED chip 8 is electrically connected to the electrode lead area 5 through the electrode lead 9 .
本发明所述的LED散热基板的制造方法，包括如下步骤： The manufacturing method of the LED heat dissipation substrate of the present invention comprises the following steps:
首先，在金刚石-铜合金材料制成的基板主体1上开设凹槽11。 Firstly, a groove 11 is opened on the substrate main body 1 made of diamond-copper alloy material.
然后，在凹槽11内刷上钎料层A2，该钎料层A2为AgSn或AuSn或AgAuSn钎料层，厚度为10μm～50μm，并使刷有钎料层A2的凹槽11与准备放入该凹槽11内的金刚石片4能紧密接触。 Then, brush the solder layer A2 in the groove 11, the solder layer A2 is AgSn or AuSn or AgAuSn solder layer, the thickness is 10 μ m ~ 50 μ m, and make the groove 11 brushed with the solder layer A2 and the ready to put The diamond sheet 4 inserted into the groove 11 can be in close contact.
然后，在金刚石片4的外表面镀上金属膜3，该金属膜3为Au-Ti或Au-Cr或Ag-Ti或Ag-Cr双层金属膜，采用真空镀的方法制成，所述双层金属膜的总厚度为1μm～10μm。 Then, metal film 3 is plated on the outer surface of diamond sheet 4, and this metal film 3 is Au-Ti or Au-Cr or Ag-Ti or Ag-Cr double-layer metal film, adopts the method for vacuum plating to make, described The total thickness of the double-layer metal film is 1 μm˜10 μm.
然后，将镀有金属膜3的金刚石片4镶嵌到刷有钎料层A2的凹槽11内与基板主体1一起形成散热板结构。 Then, the diamond sheet 4 coated with the metal film 3 is embedded into the groove 11 brushed with the solder layer A2 to form a heat sink structure together with the substrate main body 1 .
然后，在金刚石片4上表面的金属膜3上用于贴合LED芯片8的位置处刷上钎料层B7，该钎料层B7为AgSn或AuSn或AgAuSn钎料层，厚度为10μm～50μm。 Then, brush a solder layer B7 on the metal film 3 on the upper surface of the diamond sheet 4 at the position where the LED chip 8 is bonded, the solder layer B7 is an AgSn or AuSn or AgAuSn solder layer with a thickness of 10 μm to 50 μm .
然后，将LED芯片8与钎料层B7对正粘合。 Then, align and bond the LED chip 8 and the solder layer B7.
然后，将贴有LED芯片8的散热板结构放入钎焊炉中进行加热钎焊。 Then, put the heat dissipation plate structure pasted with the LED chips 8 into a brazing furnace for heating and brazing.
最后，将焊好的散热板结构上的金刚石片4上表面的金属膜3通过光刻技术去除多余的部分，形成电极导线区5和芯片连接层6，从而完成LED散热基板的制造。 Finally, the metal film 3 on the upper surface of the diamond sheet 4 on the welded heat sink structure is removed by photolithography to form the electrode wire area 5 and the chip connection layer 6, thereby completing the manufacture of the LED heat sink substrate.
此外，当LED散热基板制造好后，可以将LED芯片8与电极导线区5通过电极引线9电连接在一起。 In addition, after the LED heat dissipation substrate is manufactured, the LED chip 8 and the electrode lead area 5 can be electrically connected together through the electrode lead 9 .
本发明是通过实施例来描述的，但并不对本发明构成限制，参照本发明的描述，所公开的实施例的其他变化，如对于本领域的专业人士是容易想到的，这样的变化应该属于本发明权利要求限定的范围之内。 The present invention is described by the embodiment, but does not constitute limitation to the present invention, with reference to the description of the present invention, other changes of the disclosed embodiment, if it is easy to imagine for those skilled in the art, such changes should belong to Within the scope defined by the claims of the present invention.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310140041.6A CN103247742B (en) | 2013-04-22 | 2013-04-22 | A kind of LED heat radiation substrate and manufacture method thereof |
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| CN106163732B (en) * | 2014-04-02 | 2019-03-05 | 千住金属工业株式会社 | LED solder alloy and LED component |
| US10985305B2 (en) * | 2016-10-25 | 2021-04-20 | Kyocera Corporation | Light emitting element mounting substrate, light emitting device, and light emitting module |
| CN112234037B (en) * | 2020-09-17 | 2022-11-04 | 中国电子科技集团公司第五十五研究所 | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof |
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| CN102339941A (en) * | 2010-07-28 | 2012-02-01 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure and light-emitting diode module |
| CN102456817A (en) * | 2010-11-03 | 2012-05-16 | 黄世耀 | LED thermal module |
| CN102593314A (en) * | 2011-01-13 | 2012-07-18 | 吴耀铨 | Heat radiation substrate |
| CN102623617A (en) * | 2012-04-12 | 2012-08-01 | 广州市鸿利光电股份有限公司 | Chip on board (COB) aluminum substrate with high reflectivity and good heat dissipation performance and manufacturing process thereof |
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| KR100851183B1 (en) * | 2006-12-27 | 2008-08-08 | 엘지이노텍 주식회사 | Semiconductor light emitting device package |
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| US20120288698A1 (en) * | 2011-03-23 | 2012-11-15 | Advanced Diamond Technology, Inc | Method of fabrication, device structure and submount comprising diamond on metal substrate for thermal dissipation |
| KR101830135B1 (en) * | 2011-07-29 | 2018-02-20 | 엘지이노텍 주식회사 | Light emitting device |
| CN202888233U (en) * | 2012-10-15 | 2013-04-17 | 无锡春辉科技有限公司 | Chip-type LED |
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| CN102339941A (en) * | 2010-07-28 | 2012-02-01 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure and light-emitting diode module |
| CN102456817A (en) * | 2010-11-03 | 2012-05-16 | 黄世耀 | LED thermal module |
| CN102593314A (en) * | 2011-01-13 | 2012-07-18 | 吴耀铨 | Heat radiation substrate |
| CN102623617A (en) * | 2012-04-12 | 2012-08-01 | 广州市鸿利光电股份有限公司 | Chip on board (COB) aluminum substrate with high reflectivity and good heat dissipation performance and manufacturing process thereof |
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