CN213936163U - Thyristor packaging structure - Google Patents
Thyristor packaging structure Download PDFInfo
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- CN213936163U CN213936163U CN202120165499.7U CN202120165499U CN213936163U CN 213936163 U CN213936163 U CN 213936163U CN 202120165499 U CN202120165499 U CN 202120165499U CN 213936163 U CN213936163 U CN 213936163U
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Abstract
The utility model discloses a thyristor packaging structure, including copper bottom plate, insulating material, thyristor chip, metal casing, molybdenum piece and metal upper cover, welding installation has insulating material on the copper bottom plate, welding installation has the molybdenum piece on the insulating material, welding installation has the thyristor chip on the molybdenum piece, respectively through first bonding aluminium silk and second bonding aluminium silk welded fastening between molybdenum piece and the thyristor chip, install metal casing on the copper bottom plate, metal casing passes through ceramic insulating ring and welds respectively and installs copper electrode G, copper electrode A and copper electrode K. The utility model discloses introduce insulating material, this material can heat conduction and can also the shell uncharged, with this encapsulation overall arrangement, can also effectively improve current density, has reduced the thermal resistance, and the device leakproofness has obtained very big improvement, has effectively guaranteed the high reliability of device.
Description
Technical Field
The utility model relates to a thyristor technical field specifically is a thyristor packaging structure.
Background
Thyristors are widely used in equipment such as rectification power supplies, inverter power supplies, switching power supplies and UPS uninterrupted power supply systems.
The traditional plastic package device adopts a chain welding technology and plastic package packaging, so that the welding void is very large, and the thermal resistance is large; the plastic package device has no air tightness and poor reliability, the device has poor reliability and is easy to damage under the environment with high and low temperature and high humidity, and the packaging structure can effectively solve the problems.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a thyristor packaging structure to the reliability that proposes among the solution above-mentioned background art is poor, the fragile problem.
In order to achieve the above object, the utility model provides a following technical scheme: a thyristor packaging structure comprises a copper bottom plate, an insulating material, a thyristor chip, a metal shell, a molybdenum sheet and a metal upper cover, wherein the insulating material is welded on the copper bottom plate, the molybdenum sheet is welded on the insulating material, the thyristor chip is welded on the molybdenum sheet, the molybdenum sheet and the thyristor chip are respectively fixed by welding through a first bonding aluminum wire and a second bonding aluminum wire, the metal shell is installed on the copper bottom plate, the metal shell is respectively welded with a copper electrode G, a copper electrode A and a copper electrode K through ceramic insulating rings, the molybdenum sheet is respectively connected with the copper electrode G, the copper electrode A and the copper electrode K through electrode connecting sheets, and the metal upper cover is welded on the top of the metal shell.
Preferably, the insulation voltage among the metal shell, the copper electrode G, the copper electrode A and the copper electrode K is 1500V alternating current, and the insulation resistance is more than or equal to 10G omega.
Preferably, a silicone gel is filled between the metal shell and the metal upper cover.
Preferably, an iron-nickel alloy frame is welded to the outer side of the copper bottom plate.
Compared with the prior art, the beneficial effects of the utility model are that: this thyristor packaging structure overall structure is reasonable, has following advantage:
(1) the utility model discloses thyristor shell adopts the red copper base, and vacuum welding insulating heat conduction material is as electrical isolation on the red copper base, carries out vacuum welding molybdenum sheet again on the insulating material, and the shell adopts iron-nickel alloy, and the upper cover adopts iron-nickel alloy, welds with parallel seam welding between shell base and the shell cover, guarantees the shell gas tightness, the utility model discloses introduce insulating material, this material can heat conduction and the shell can not electrified, with this packaging layout, can also effectively improve current density, reduced the thermal resistance, the device leakproofness has obtained very big improvement, has effectively guaranteed the high reliability of device;
(2) the utility model discloses a chip adopts square thyristor chip, and chip positive pole and shell carry out the vacuum welding encapsulation, and the negative pole is connected and is drawn forth with outer negative pole with the bonding mode, and the control pole is drawn forth with the direct bonding of lead wire, and the cavity is inside to carry out the embedment with silica gel, interconnects with bonding aluminium silk between device chip and the electrode, and bonding aluminium silk technology is semiconductor industry general technology, low in production cost, efficient.
Drawings
Fig. 1 is a schematic top view of the present invention;
fig. 2 is a schematic side view of the cross-sectional structure of the present invention.
In the figure: 1. a copper base plate; 2. an insulating material; 3. a thyristor chip; 4. a first bonding aluminum wire; 5. a second bonding aluminum wire; 6. a metal housing; 7. a copper electrode G; 8. a copper electrode A; 9. a copper electrode K; 10. a ceramic insulating ring; 11. a molybdenum sheet; 12. a silicone gel; 13. an electrode connecting sheet; 14. and (6) a metal upper cover.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides an embodiment: a thyristor packaging structure comprises a copper bottom plate 1, an insulating material 2, a thyristor chip 3, a metal shell 6, a molybdenum sheet 11 and a metal upper cover 14, wherein the insulating material 2 is welded on the copper bottom plate 1, an iron-nickel alloy frame is welded on the outer side of the copper bottom plate 1, the molybdenum sheet 11 is welded on the insulating material 2, the thyristor shell adopts a red copper base, an insulating heat conduction material is welded on the red copper base in a vacuum mode to serve as electrical isolation, the molybdenum sheet 11 is welded on the insulating material 2 in a vacuum mode, the metal shell 6 adopts iron-nickel alloy, the metal upper cover 14 adopts iron-nickel alloy, the thyristor chip 3 is welded on the molybdenum sheet 11, the molybdenum sheet 11 and the thyristor chip 3 are respectively welded and fixed through a first bonding aluminum wire 4 and a second bonding aluminum wire 5, the metal shell 6 is installed on the copper bottom plate 1, and the metal shell 6 is respectively welded and installed with a copper electrode G7 through a ceramic insulating ring 10, The insulation voltage between a copper electrode A8 and a copper electrode K9, the insulation voltage between a metal shell 6 and a copper electrode G7, the insulation resistance between the copper electrode A8 and the copper electrode K9 is alternating current 1500V per minute, the insulation resistance is not less than 10G omega, a molybdenum sheet 11 is respectively connected and installed with a copper electrode G7 and a copper electrode A8 and a copper electrode K9 through electrode connecting sheets 13, a metal upper cover 14 is welded and installed on the top of the metal shell 6, silica gel 12 is filled between the metal shell 6 and the metal upper cover 14, the anode and the shell of the chip are packaged in a vacuum welding mode, the cathode is connected and led out with an outer cathode in a bonding mode, a control electrode is directly bonded and led out with a lead, the silica gel 12 is filled and sealed in a cavity, the chip and the electrode of the device are interconnected by a bonding aluminum wire, and the bonding aluminum wire process is a general process in the semiconductor industry, and is low in production cost and high in efficiency.
The working principle is as follows: when in use, the metal shell 6 is subjected to plasma cleaning; after cleaning, welding a thyristor chip 3 on an insulating material 2 area, welding a shell base on the anode side of the thyristor chip 3 during welding, after welding, bonding through a first bonding aluminum wire 4, wherein a bonding area is a thyristor cathode area and a copper electrode K9 for ultrasonic bonding, connecting a chip cathode to the copper electrode A8 by using a bonding wire, bonding a chip G area to the copper electrode G7 for ultrasonic bonding, after bonding, pouring silicon gel 12 according to the position shown in the figure, performing normal temperature curing after pouring the silicon gel 12, and after curing, welding by using a metal upper cover 14 for parallel seam welding.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (4)
1. The utility model provides a thyristor packaging structure, includes copper bottom plate (1), insulating material (2), thyristor chip (3), metal casing (6), molybdenum sheet (11) and metal upper cover (14), its characterized in that: the thyristor is characterized in that an insulating material (2) is welded on the copper base plate (1), a molybdenum sheet (11) is welded on the insulating material (2), a thyristor chip (3) is welded on the molybdenum sheet (11), the molybdenum sheet (11) and the thyristor chip (3) are respectively welded and fixed through a first bonding aluminum wire (4) and a second bonding aluminum wire (5), a metal shell (6) is installed on the copper base plate (1), the metal shell (6) is respectively welded and installed with a copper electrode G (7), a copper electrode A (8) and a copper electrode K (9) through a ceramic insulating ring (10), the molybdenum sheet (11) is respectively led and installed through an electrode connecting sheet (13) and the copper electrode G (7), the copper electrode A (8) and the copper electrode K (9), and a metal upper cover (14) is welded and installed on the top of the metal shell (6).
2. The thyristor package structure of claim 1, wherein: the insulation voltage among the metal shell (6), the copper electrode G (7), the copper electrode A (8) and the copper electrode K (9) is 1500V alternating current, and the insulation resistance is more than or equal to 10G omega.
3. The thyristor package structure of claim 1, wherein: and a silicone gel (12) is filled between the metal shell (6) and the metal upper cover (14).
4. The thyristor package structure of claim 1, wherein: and an iron-nickel alloy frame is welded on the outer side of the copper bottom plate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120165499.7U CN213936163U (en) | 2021-01-21 | 2021-01-21 | Thyristor packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120165499.7U CN213936163U (en) | 2021-01-21 | 2021-01-21 | Thyristor packaging structure |
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| Publication Number | Publication Date |
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| CN213936163U true CN213936163U (en) | 2021-08-10 |
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| CN202120165499.7U Active CN213936163U (en) | 2021-01-21 | 2021-01-21 | Thyristor packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374026A (en) * | 2023-12-08 | 2024-01-09 | 深圳辰达半导体有限公司 | Car-standard MOS tube with low on-resistance and preparation method thereof |
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2021
- 2021-01-21 CN CN202120165499.7U patent/CN213936163U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374026A (en) * | 2023-12-08 | 2024-01-09 | 深圳辰达半导体有限公司 | Car-standard MOS tube with low on-resistance and preparation method thereof |
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