CN202352664U - Power module controlled by direct current motor excitation - Google Patents

Power module controlled by direct current motor excitation Download PDF

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Publication number
CN202352664U
CN202352664U CN2011204851118U CN201120485111U CN202352664U CN 202352664 U CN202352664 U CN 202352664U CN 2011204851118 U CN2011204851118 U CN 2011204851118U CN 201120485111 U CN201120485111 U CN 201120485111U CN 202352664 U CN202352664 U CN 202352664U
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China
Prior art keywords
direct
copper substrate
thyristor
direct copper
chip
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CN2011204851118U
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Chinese (zh)
Inventor
王涛
姚玉双
麻长胜
姚天保
王晓宝
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Macmic Science and Technology Co Ltd
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Jiangsu Macmic Science & Technology Co Ltd
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Priority to CN2011204851118U priority Critical patent/CN202352664U/en
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

The utility model relates to a power module controlled by direct current motor excitation. A direct copper-clad substrate is fixed on a copper bottom plate, two thyristor chips and three diode chips are respectively arranged at four corners and the middle of the direct copper-clad substrate, the positive electrode of each thyristor chip and the negative electrode of each diode chip are respectively welded onto the direct copper-clad substrate, the negative electrode of each thyristor chip and the positive electrode of each diode chip are respectively connected with the direct copper-clad substrate by virtue of a transition piece and a connecting bridge plate, an input terminal is fixedly arranged in an input zone on the direct copper-clad substrate, an output terminal is fixedly arranged in an output zone of the direct copper-clad substrate, a control terminal is fixedly arranged in a gate pole zone of the direct copper-clad substrate, a shell is fixed on the copper bottom plate, and the diode chips, the thyristor chips, the transition pieces, the connecting bridge plates as well as one side of the input terminal, one side of the output terminal and one side of the control terminal are sealed in the shell by filling soft elastic gum. The power module controlled by the direct current motor excitation, disclosed by the utility model, has the advantages of reasonable structure, low shell temperature and reliability for use, and the heat dissipation distribution is uniform.

Description

The power model of excitation of direct current generator control
Technical field
The utility model relates to a kind of power model of excitation of direct current generator control, belongs to half control rectifier bridge thyristor module manufacturing technology field.
Background technology
The power model of existing excitation of direct current generator control comprises direct copper substrate (DBC), thyristor chip, diode chip for backlight unit, input, output and control terminal and shell.Thyristor chip, diode chip for backlight unit and input, output and control terminal are separately fixed on the direct copper substrate.But the direct copper substrate is the ceramic material upper/lower terminal face in the centre is covered with copper foil layer, and the middle aluminium oxide ceramics that is generally is to be used to guarantee the insulation between the Copper Foil up and down.Be that direct copper substrate with power model is mounted on the radiator during use, its bottom thermal diffusion area is less, so the shell temperature of power model bottom is higher, and service condition is comparatively harsh.In addition, this power model tends to occur some distortion after welding process; Make the bottom surface of power model often can not form well, contact closely with radiator; So can influence power model radiating effect at work,, can influence the quality of power model greatly in power model if the heat long time integration can not in time dissipate; Even the chip in the damage power model, cause power model to damage.Secondly,, under the setting pressure effect, be easy to break, cause the dielectric voltage withstand of power model to lose efficacy owing to be potsherd in the middle of the direct copper substrate.Moreover, being used for its thyristor chip of power model of excitation of direct current generator control and the zone line that diode chip for backlight unit all concentrates on the direct copper substrate at present, skewness therefore dispels the heat.
Summary of the invention
The purpose of the utility model provides a kind of rational in infrastructure, and heat radiation is evenly distributed, hangs down the power model of shell temperature, the control of service-strong excitation of direct current generator.
The utility model is that the technical scheme that achieves the above object is: a kind of power model of excitation of direct current generator control; Comprise direct copper substrate, thyristor chip and diode chip for backlight unit and shell; It is characterized in that: said direct copper substrate is fixed on the copper soleplate; And the direct copper substrate is connected with thyristor groups and three diode groups that diode chip for backlight unit constitutes that two thyristor chips constitute; Said two thyristor chips, two diode chip for backlight unit lay respectively at four corners of direct copper substrate; Another diode chip for backlight unit is positioned in the middle of the direct copper substrate; The anode of each thyristor chip and the negative electrode of each diode chip for backlight unit are welded on respectively on the direct copper substrate, and the negative electrode of each thyristor chip and the anode of each diode chip for backlight unit be respectively through transition plate and connect bridge plate and be connected with the direct copper substrate, and the input area on the direct copper substrate is fixed with that input terminal, output area are fixed with lead-out terminal, the gate pole district is fixed with control terminal; Shell is fixed on the copper soleplate, and a side of each diode chip for backlight unit, thyristor chip, transition plate, connection bridge plate and input terminal, lead-out terminal and control terminal through the sealing of perfusion soft elastic glue in the enclosure.
The utility model is fixed on the direct copper substrate on the copper soleplate; The heat of being given birth to when working with each diode chip for backlight unit through each thyristor chip of copper soleplate transmission; So power model shell temperature is low; Copper soleplate can bear bigger Installation Stress when mounted simultaneously, can not cause ceramic breaking in the direct copper substrate, and reliable installation is convenient.The utility model lays respectively at two thyristor chips, two diode chip for backlight unit in four corners of direct copper substrate; Another diode chip for backlight unit is positioned at the centre of direct copper substrate; Each chip can be evenly distributed on the direct copper substrate; Therefore heat radiation is more even, so can make the long-time steady operation of power model, and rational in infrastructure.The utility model pours into the soft elastic glue sealing through soft elastic glue to each diode chip for backlight unit, thyristor chip, transition plate, connection bridge plate and input terminal, lead-out terminal and control terminal; Through soft elastic glue diode chip for backlight unit and thyristor chip are protected; Not only make connect bridge plate can discharge the mechanical stress that produces because of vibration with each terminal and work in the thermal stress that produced; And through soft elastic glue make thermal stress can not act on diode chip for backlight unit and with thyristor chip on, so the functional reliability of power model is greatly improved.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is made further detailed description.
Fig. 1 is the structural representation of the power model of this practical excitation of direct current generator control.
Fig. 2 is the plan structure sketch map of Fig. 1.
Fig. 3 is the A-A sectional structure sketch map of Fig. 2.
Fig. 4 is the structural representation after the power model of this practical excitation of direct current generator control is removed shell,
Fig. 5 is the equivalent electric circuit topological diagram of the power model of this practical excitation of direct current generator control.
Wherein: 1-shell, 1-1-pore, 1-2-reinforcement, 1-3-positioning baffle, 2-copper soleplate, 3-first control terminal; 4-first lead-out terminal, 5-second control terminal, 6-second input terminal, 7-second lead-out terminal, 8-first input end, 9-diode chip for backlight unit; The 10-transition plate, 11-direct copper substrate, 11-1-gate pole district, 11-2-input area, 11-3-output area, 11-4-location hole; 12-connects bridge plate, 13-thyristor chip, 14-soft elastic glue, 15-epoxy resin, 16-aluminium wire.
Embodiment
See shown in Fig. 1～4 that the power model of the excitation of direct current generator of the utility model control comprises direct copper substrate 11, thyristor chip 13 and diode chip for backlight unit 9 and shell 1.See shown in Figure 3; The utility model direct copper substrate 11 is fixed on the copper soleplate 2; Can direct copper substrate 11 be welded on the copper soleplate 2 through soldering, direct copper substrate 11 is connected with thyristor groups and three diode groups that diode chip for backlight unit 9 constitutes that two thyristor chips 13 constitute, and constitutes half control rectifier bridge thyristor power model through thyristor groups and diode group; Seeing shown in Figure 5ly, is the equivalent electric circuit topological diagram of the utility model.See shown in Fig. 1～4; The utility model two thyristor chips 13, two diode chip for backlight unit 9 lay respectively at four corners of direct copper substrate 11; And another diode chip for backlight unit 9 is positioned in the middle of the direct copper substrate 11; Each chip can be distributed on the direct copper substrate 11, make that also heat radiation is more even.See shown in Figure 4ly, the utility model direct copper substrate 11 is provided with each thyristor chip 13 location hole 11-4 with each diode chip for backlight unit 9 location, through the convenient location to each thyristor chip 13 and each diode chip for backlight unit 9 of location hole 11-4.The anode of each thyristor chip 13 of the utility model is welded on respectively on the direct copper substrate 11 with the negative electrode of each diode chip for backlight unit 9; Promptly the anode of two thyristor chips 13 is welded on the direct copper substrate 11 through soldering; And three diode chip for backlight unit 9 are welded on the direct copper substrate 11 through soldering; The anode of the negative electrode of each thyristor chip 13 and each diode chip for backlight unit 9 respectively through transition plate 10 be connected bridge plate 12 and be welded on the direct copper substrate 11; The transition plate 10 of the utility model maybe can cut down sheet for molybdenum sheet or tungsten sheet; Because transition plate 10 thermal coefficient of expansions are between chip and connection bridge plate 12; Therefore make the negative electrode of each thyristor chip 13 and the anode of each diode chip for backlight unit 9 be connected bridge plate 12 1 ends with each through transition plate 10, and the other end of connection bridge plate 12 is welded on the direct copper substrate 11, can not effectively reduce because thermal coefficient of expansion matches and causes thyristor chip 13, diode chip for backlight unit 9 and the thermal stress that is connected between the bridge plate 12 through fibre through the soldering welding.
See shown in Figure 4; Input area 11-2 on the utility model direct copper substrate 11 is fixed with that input terminal, output area 11-3 are fixed with lead-out terminal, gate pole district 11-1 is fixed with control terminal; The zone, the left and right sides of direct copper substrate 11 is for input area 11-2, zone line is output area 11-3 up and down; First input end 8 and second input terminal 6 is separately fixed at the middle part of left input area and right input area; Through first input end 8 and second input terminal 6 power supply is introduced power model; And first lead-out terminal 4 and second lead-out terminal 7 are separately fixed at the middle part of output area and following output area; Through first lead-out terminal 4 and second lead-out terminal 7 voltage after the rectification is exported, and the left and right sides lower zone of direct copper substrate 11 is gate pole district 11-1 that the gate pole of thyristor chip 13 is bonded in the gate pole district 11-1 of direct copper substrate 11 through aluminium wire 16; Left-hand door polar region and right gate pole district are fixed with first control terminal 3 and second control terminal 5 respectively, through first control terminal 3 and second control terminal 5 control signal are introduced.
See Fig. 3, shown in 4; The shell 1 of the utility model is fixed on the copper soleplate 2; Can be connected through adhesive between shell 1 and the copper soleplate 2; Can adopt fixing structure between shell 1 and the copper soleplate 2, conveniently location and reliable the connection, a side of each diode chip for backlight unit 9, thyristor chip 13, transition plate 10, connection bridge plate 12 and input terminal, lead-out terminal and control terminal is sealed in the shell 1 through perfusion soft elastic glue 14; With join domain protection sealing, be full of shell 1 space with epoxy resin 15 perfusions more at last.See Fig. 2, shown in 3; The utility model shell 1 is provided with crisscross reinforcement 1-2, and the bottom of reinforcement 1-2 is provided with positioning baffle 1-3, carries out spacing through positioning baffle 1-3 to each terminal; And the outside of the wallboard of shell 1 is provided with at least two pore 1-1; Can be provided with four or more a plurality of pore 1-1 on the shell 1, can catch ring epoxy resins 15 charge into the space of pore 1-1 below, do the time spent in temperature cycles through wallboard; Soft elastic glue 14 expands with epoxy resin 15 space free below pore 1-1 and shrinks, and can not damage structure.
See Fig. 3, shown in 4; The utility model direct copper substrate 11 is positioned at position, copper soleplate 2 middle; And the area of copper soleplate 2 is more than 2 times of area of direct copper substrate 11; According in the industry during chip thermal diffusion thermal diffusion angle commonly used be 45 ℃, the utility model has the thermal diffusion area of the power model bottom of copper soleplate will be much larger than with the thermal diffusion area of copper soleplate.Therefore, under the condition of identical convection coefficient and chip heating power, the shell Wen Huigeng of the power model of the utility model excitation of direct current generator control is low.

Claims (6)

1. the power model of excitation of direct current generator control; Comprise direct copper substrate (11), thyristor chip (13) and diode chip for backlight unit (9) and shell (1); It is characterized in that: said direct copper substrate (11) is fixed on the copper soleplate (2); And direct copper substrate (11) is connected with the thyristor groups of two thyristor chips (13) formation and the diode group that three diode chip for backlight unit (9) constitute; Said two thyristor chips (13), two diode chip for backlight unit (9) lay respectively at four corners of direct copper substrate (11); Another diode chip for backlight unit (9) is positioned in the middle of the direct copper substrate (11); The negative electrode of the anode of each thyristor chip (13) and each diode chip for backlight unit (9) is welded on respectively on the direct copper substrate (11); The anode of the negative electrode of each thyristor chip (13) and each diode chip for backlight unit (9) is connected with direct copper substrate (11) through transition plate (10) and connection bridge plate (12) respectively; Input area (11-2) on the direct copper substrate (11) is fixed with that input terminal, output area (11-3) are fixed with lead-out terminal, gate pole district (11-1) is fixed with control terminal, and shell (1) is fixed on the copper soleplate (2), and each diode chip for backlight unit (9), thyristor chip (13), transition plate (10), a side that connects bridge plate (12) and input terminal, lead-out terminal and control terminal are sealed in the shell (1) through pouring into soft elastic glue (14).
2. the power model of excitation of direct current generator control according to claim 1; It is characterized in that: said direct copper substrate (11) is positioned at copper soleplate (2) position, middle, and copper soleplate (2) bottom area is more than 2 times of direct copper substrate (11) bottom area.
3. the power model of excitation of direct current generator control according to claim 1; It is characterized in that: the zone, the left and right sides of said direct copper substrate (11) is for input area (11-2), zone line is output area (11-3) up and down; The left and right sides lower zone of direct copper substrate (11) is gate pole district (11-1), and the gate pole of thyristor is bonded in the gate pole district (11-1) of direct copper substrate (11) through aluminium wire.
4. the power model of excitation of direct current generator control according to claim 1; It is characterized in that: be provided with crisscross reinforcement (1-2) in the said shell (1); And the bottom of reinforcement (1-2) is provided with positioning baffle (1-3), and the wallboard outside of shell (1) is provided with at least two pores (1-1).
5. the power model of excitation of direct current generator control according to claim 1, it is characterized in that: described transition plate (10) maybe can cut down sheet for molybdenum sheet or tungsten sheet.
6. the power model of excitation of direct current generator control according to claim 1 is characterized in that: described direct copper substrate (11) is provided with the location hole to each thyristor chip (13) and each diode chip for backlight unit (9) location.
CN2011204851118U 2011-11-30 2011-11-30 Power module controlled by direct current motor excitation Expired - Lifetime CN202352664U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931175A (en) * 2012-11-14 2013-02-13 江苏爱普特半导体有限公司 Thyristor module
CN104218031A (en) * 2013-05-31 2014-12-17 湖北台基半导体股份有限公司 Busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and manufacturing method thereof
CN104917399A (en) * 2015-06-08 2015-09-16 浙江华晶整流器有限公司 Insulated half-bridge rectifying module
CN105633025A (en) * 2014-10-31 2016-06-01 湖北台基半导体股份有限公司 High insulation and voltage resistance power semiconductor module
CN105743363A (en) * 2016-04-25 2016-07-06 蒋李望 Single-phase rectification and voltage adjustment power module for magnetic motor and fabrication method of single-phase rectification and voltage adjustment power module

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931175A (en) * 2012-11-14 2013-02-13 江苏爱普特半导体有限公司 Thyristor module
CN102931175B (en) * 2012-11-14 2015-04-08 江苏爱普特半导体有限公司 Thyristor module
CN104218031A (en) * 2013-05-31 2014-12-17 湖北台基半导体股份有限公司 Busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and manufacturing method thereof
CN104218031B (en) * 2013-05-31 2017-10-24 湖北台基半导体股份有限公司 Busbar articulated high-performance IGBT module and preparation method thereof
CN105633025A (en) * 2014-10-31 2016-06-01 湖北台基半导体股份有限公司 High insulation and voltage resistance power semiconductor module
CN104917399A (en) * 2015-06-08 2015-09-16 浙江华晶整流器有限公司 Insulated half-bridge rectifying module
CN104917399B (en) * 2015-06-08 2017-06-16 浙江华晶整流器有限公司 A kind of insulated type semi-bridge rectifier module
CN105743363A (en) * 2016-04-25 2016-07-06 蒋李望 Single-phase rectification and voltage adjustment power module for magnetic motor and fabrication method of single-phase rectification and voltage adjustment power module

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Granted publication date: 20120725