CN104600037A - Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method - Google Patents
Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method Download PDFInfo
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- CN104600037A CN104600037A CN201410843678.6A CN201410843678A CN104600037A CN 104600037 A CN104600037 A CN 104600037A CN 201410843678 A CN201410843678 A CN 201410843678A CN 104600037 A CN104600037 A CN 104600037A
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Abstract
The invention discloses a multi-die high-power diode shell and a manufacturing method thereof as well as a chip packaging method. The multi-die shell comprises a ceramic frame and a substrate; a plurality of microstrip lines are put through the frame; a first bonding region is arranged on the inner side of the frame, while a plurality of leads are arranged on the outer side of the frame; the substrate is arranged at the bottom of the inner side of the ceramic frame, and provided with a ceramic base body, and an upper side surface and a lower side surface for metallizing the ceramic base body; a plurality of isolation regions and a second bonding region are formed on the upper side surface; the isolation regions are used for receiving the chip. According to the manufacturing method, a high-temperature cofiring ceramic process is adopted, and high-heat dissipation and high-reliability multi-die packaging is realized by virtue of a structure in which a metal heat sink is brazed under the chip substrate and a kovar weld ring is brazed and sealed on the upper surface of the ceramic frame, and meanwhile, the requirements of large current and high power property are achieved.
Description
Technical field
The present invention relates to technical field of semiconductor chip encapsulation, particularly relate to Multi-core heavy-duty diode shell and preparation method thereof, chip packaging method.
Background technology
Current diode packaging case mostly is small area analysis or single-chip group low-power shell, is difficult to meet the development trend of market to diode miniaturization, integrated level, big current, high-power and high reliability.Ceramic-metal package assembling has well mixed these trend factors, because the electricity of its structure Miniaturizable, high reliability and excellence, the advantage of hot property make it obtain increasing application in diode package industry, it is one of diode package assembly development trend.
Traditional diode chip for backlight unit shell based on ceramic-metal encapsulation mainly adopts the mode of single-chip package, that is in a ceramic-metal shell, only encapsulates a chip.Even if adopt the multiple chip of encapsulation in a shell, also there is the problem that cost is high, reliability is low, flexibility ratio is low.
Summary of the invention
In view of this, in order to solve the problems of the technologies described above, main purpose of the present invention is to provide a kind of Multi-core heavy-duty diode shell and chip packaging method thereof, can parallel running many core assemblies sheet in the big current of 1 ampere, realize Multi-core heavy-duty diode package application, structure is reliable.
One aspect of the present invention provides a kind of Multi-core heavy-duty diode shell, comprising:
Ceramic frame, places many microstrip lines in framework, establish the first bonding region, establish a plurality of leads outside frame inside frame;
Substrate, be arranged on described ceramic frame inside bottom, there is ceramic matrix, and described by metallized for described ceramic matrix uper side surface and downside surface, described uper side surface forms multiple isolated area and the second bonding region, and described isolated area is for holding described chip.
Further, also comprise heat sink, for placing described ceramic frame and described substrate, wherein, described described downside surface that is heat sink and described substrate directly contacts.
Further, the matrix of described substrate is the ceramic matrix of high heat conductance, and its downside surface and described ceramic frame to be heat sinkly connected with described by soldering.
Further, also comprise and can cut down weld-ring, describedly cut down weld-ring is fixed on described ceramic frame upper surface by soldering.
Further, described microstrip line layer thickness scope is 10 μm ~ 12 μm.
Further, the described ceramic matrix of described ceramic frame and described substrate is one-body molded based on AlN High Temperature Co Fired Ceramic technique.
The present invention provides for making above-mentioned Multi-core heavy-duty diode shell on the other hand, comprise: adopt High Temperature Co Fired Ceramic process integration to form ceramic frame and ceramic matrix, utilize heat sink at described substrate downside surface brazing metal and can weld-ring be cut down in ceramic frame upper surface soldering sealing-in.
Another aspect of the invention additionally provides a kind of multi-chip package method, comprise: provide said chip package assembling and multiple chip, chip described in each in described multiple chip is fixedly connected on a corresponding described isolated area of described substrate by welding, bonding or gluing.
Further, described multiple chip and described package casing are carried out being electrically connected comprise with spun gold described first bonding region and described second bonding region carried out be electrically connected, with spun gold, the second bonding region is electrically connected with the isolated area of described chip encapsulation assembly in one or more, be electrically connected described first bonding region, two bonding regions or described isolated area to described microstrip line by spun gold, be electrically connected to described lead-in wire by described microstrip line.
Further, also comprise and multiple chip is electrically connected, be specially: with lead-in wire, multiple described second bonding region is electrically connected with multiple described first bonding region, then is electrically connected with the bonding region of spun gold by multiple described second package assembling.
Beneficial effect of the present invention: this package assembling is a kind of high-power chip package casing of excellent radiation performance, is especially applicable to heavy-duty diode package casing, can walk abreast ten chips, and maximum current can reach 1 ampere; Structural design is simple, main employing AlN High Temperature Co Fired Ceramic technique, utilize brazing metal under chip substrate heat sink and the structure of weld-ring can be cut down in ceramic frame upper surface soldering sealing-in, realize high heat radiation and highly reliable diode package, meet user to big current and high-power performance requirement; In chamber, heat radiation is excellent, the reliable stable operation environment of mechanical strength for chipset provides for high heat conductivity ceramic base plate and metal heat sink thereof, meets the demand of diode user to integrated, highly reliable, high-power package casing greatly.
Accompanying drawing explanation
Fig. 1 is the planar structure schematic diagram schematically showing Multi-core heavy-duty diode shell of the present invention;
Fig. 2 is the cross-sectional view schematically showing Multi-core heavy-duty diode shell of the present invention.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and coordinate accompanying drawing to be described in detail below.
In the following description, in order to explain explanation, many concrete details are proposed to provide complete understanding of the present invention.But obviously, the present invention can be embodied as and not have these details.In other cases, known structure and equipment illustrate in form of a block diagram, unnecessary to misunderstanding of the present invention to avoid.
Fig. 1 is the planar structure schematic diagram schematically showing Multi-core heavy-duty diode shell of the present invention.Fig. 2 is the cross-sectional view schematically showing Multi-core heavy-duty diode shell of the present invention.In conjunction with reference to figure 1,2, the invention provides a kind of Multi-core heavy-duty diode shell, comprising: ceramic frame 1, place many microstrip line (not shown) in framework, preferably, described microstrip line layer thickness scope is 10 μm ~ 12 μm.Establish the first bonding region 8 inside frame, outside frame, establish a plurality of leads 5; Substrate 2, be arranged on described ceramic frame 1 inside bottom, there is ceramic matrix, and it is described by metallized for described ceramic matrix uper side surface and downside surface, described uper side surface forms multiple isolated area 6 and the second bonding region 7, and described isolated area 6 is for holding described chip (not shown).
Further, also comprise heat sink 3, for placing described ceramic frame 1 and described substrate 2, wherein, described heat sink 3 directly contact with the described downside surface of described substrate 2.Wherein, the matrix of described substrate 2 is the ceramic matrix of high heat conductance, and its downside surface and described ceramic frame are connected with described heat sink 3 by soldering.
Further, also comprise and can cut down weld-ring 4, describedly cut down weld-ring 4 is fixed on described ceramic frame 1 upper surface by soldering.
Wear the ceramic frame 1 of microstrip line in framework, its role is to chip and environment isolation, mechanical protection and packing bearing effect are provided, simultaneously as the bearing medium of microstrip line, realize transmission and the signal transmission of external circuit in chamber; Chip substrate 2 in chamber, chip region is connected with chipset by the form such as welding, bonding, gluing and realizes Multi-core and walk abreast, and it is interconnected that first and second bonding region 7,8 and porcelain frame inside microstrip line pass through gold wire bonding realizing circuit; Metal heat sink 3, by with the aluminium nitride matrix of high heat conductance and the soldering of alumina ceramic frame interconnected, realize high-cooling property and the structure high reliability of high-power applications; Weld-ring 4 can be cut down, user can be met and encapsulate requirement, realize highly reliable level Hermetic Package; Lead-in wire 5 realizes the application of chip encapsulation assembly Surface Mount by forms such as welding, bonding, gluings, can meet the process requirements such as automatic welding, manual soldering.
As a specific embodiment of the present invention, package assembling provided by the invention is mainly based on the novel Multi-core heavy-duty diode ceramic-metal package casing of AlN High Temperature Co Fired Ceramic technology, it comprises chip substrate (AlN), weld-ring, lead-in wire in the AlN ceramic frame of built-in microstrip line, metal heat sink, chamber, with chip by directly welding, the type of attachment such as bonding or gluing realizes the heavy-duty diode application package casing of Multi-core; This diode packaging case, ten chipsets are piled in condominium, and the operating voltage of every chip can up to 100V, and electric current is up to 1 ampere.It is characterized in that implementation method comprises the steps:
Pottery chamber built-in chip substrate, its structure are that upper surface metallizes ten isolated core sections, realize the collateral vessel heap of 10 core assembly sheets, arrange bonding region simultaneously near chip region, and the inner microstrip line of porcelain frame is interconnected by gold wire bonding realizing circuit; Lower surface completely metallized, realizes and metal heat sink interconnected;
It is interconnected that built-in microstrip line through walls passes through microstrip line bonding region and outside lead and inside chip group, realizes transmission and the signal transmission of multi-chip group and external circuitry, and microstrip line adopts the Metal slurry of excellent electrical property to realize, and meets the transmission of big current;
Chip substrate by adopt high heat conductance ceramic matrix and and metal heat sink soldering interconnected, realize high-cooling property and the structure high reliability of high-power applications;
Multi-core heavy-duty diode ceramic-metal package casing adopts conventional High Temperature Co Fired Ceramic technique and traditional soldering processes technology, meets its structure high reliability.
Described Multi-core heavy-duty diode metal-ceramic packaging shell main body is made up of AlN High Temperature Co Fired Ceramic, porcelain frame pottery has stable dielectric constant, excellent mechanical strength, less thermal coefficient of expansion and resistance to elevated temperatures, the highly reliable encapsulation of low stress can be realized with metal sealing, sheet ceramic has high thermal conductance, meets heavy-duty diode package application.
Described Multi-core heavy-duty diode metal-ceramic packaging shell can meet user's big current application requirement, realizes the highly reliable level Hermetic Package of package assembling.
This Multi-core heavy-duty diode package casing, for chipset provides 9.70mm × 4.20mm × 1.80mm installing space, can carry out the collateral vessel heap of 10 core assembly sheets; Can maximum 1 Ampere currents be carried, realize the transmission of chip and external circuit, signal transmission and environment and isolate; There is pin configuration, the encapsulation of package assembling surface-mount type can be realized.
Present invention also offers the method using above-described embodiment shell package multi sheet, comprise: provide above-mentioned heavy-duty diode shell and multiple chip, chip described in each in described multiple chip is fixedly connected on a corresponding described isolated area of described substrate by welding, bonding or gluing.
Further, described multiple chip and described diode case are carried out being electrically connected comprise with spun gold described first bonding region and described second bonding region carried out be electrically connected, with spun gold, the second bonding region is electrically connected with the isolated area of described chip encapsulation assembly in one or more, be electrically connected described first bonding region, two bonding regions or described isolated area to described microstrip line by spun gold, be electrically connected to described lead-in wire by described microstrip line.
Further, also comprise and multiple chip is electrically connected, be specially: with lead-in wire, multiple described second bonding region is electrically connected with multiple described first bonding region, then is electrically connected with the bonding region of spun gold by multiple described second package assembling.
Present invention also offers the manufacture method of above-described embodiment Multi-core heavy-duty diode shell, comprise the steps:
1) ceramic frame 1 of built-in microstrip line is realized by the green band integral sintering technology mode of built-in metal microstrip line and bonding region, have the through walls interconnected effect that realizes big current between bonding region and bear the effect of bonding region welding quality instruction, be installing space that chip provides environment to isolate simultaneously;
2) Multi-core heavy-duty diode shell, chip region and gold wire bonding district that built-in chip substrate is isolated by metallizing, realize the 10 pipes heap parallel application of chip and circuit interconnects effects;
3) chip substrate by adopt high heat conductance matrix and and metal heat sink soldering interconnected, realize high-cooling property and the structure high reliability of high-power applications;
4) Multi-core heavy-duty diode shell adopts conventional High Temperature Co Fired Ceramic technique and traditional soldering processes technology.
The AlN ceramic green integration microstrip line Metal slurry used is Optimization Technology again after introducing, and not only realizes weld metal slurry and ceramic matrix matching when high temperature sintering shrinks, and realizes the low resistive of microstrip line simultaneously.
The Preparation equipment of described AlN ceramic green substrate and green frame comprises following four parts, ball mill for configuring required component even green band slurry, subsequently through the accurate green substrate of casting machine, printing machine, laminating machine and green cutting machine preparation size and green frame.
Embodiment 1
The preparation method of Multi-core heavy-duty diode shell of the present invention adopts High Temperature Co Fired Ceramic production technology and soldering processes technology.By being of a size of 180mm × 180mm × 0.2mm accurately and on the AlN green band of densification, utilize accurate conductor paste printing, block the techniques such as slurry printing and make required circuitous pattern and can weld metal layer, accurate printed wiring line thickness is minimum reaches 100 μm, and wire distribution distance is minimum reaches 150 μm; Utilize laser to begin to speak, ceramic chips that the technique such as lamination makes required specific cavity and shape; High Temperature Co Fired Ceramic substrate and the ceramic frame of regulation shape is molded by high precision temperature control stove high temperature sintering under certain sintering process conditions; Realize the interconnection between ceramic component and metal assembly by soldering processes, realize highly reliable surface-mount type and meet the diode ceramic-metal package assembling of high-power applications.
In this diode ceramic-metal packaging shell structure, built-in microstrip line layer thickness is 10 μm ~ 12 μm scopes; Microstrip line print lines precision is ± 30 μm.
High Temperature Co Fired Ceramic of the present invention (HTCC) technology a kind ofly high temperature sintering ceramic size is made thickness accurately and the green band of densification, green band utilizes laser drilling, metallic conductor slurry and blocks the techniques such as the printing of slurry precision and micropore slip casting and make required circuitous pattern and interconnect architecture, then multi-layer green ceramic band is burnt sinter molding in 1800 DEG C of following scopes of high temperature altogether by the integration of interconnecting relation lamination and subsequent high temperature and go out the technology of required electrical interconnection relation and shape and structure device.Be applicable to the ceramic material preparation of the excellent performance such as aluminium oxide, aluminium nitride, usually there is excellent mechanical strength, higher thermal conductivity, simultaneously with the semi-conducting material such as silicon, there is close thermal coefficient of expansion, be therefore suitable as very much the package assembling of the application devices such as high-power, integrated circuit and power model.
Of the present invention used materials and process is not described in detail, because these not change by the present invention, and these processes realized are known by those skilled in the art, package assembling disclosed in this invention, except for except packaged high-power diode, can also be applied in the encapsulation of other high-power chips.
More than describe the preferred embodiment of the present invention in detail; but the present invention is not limited to the detail in above-mentioned execution mode, within the scope of technical conceive of the present invention; can carry out multiple equivalents to technical scheme of the present invention, these equivalents all belong to protection scope of the present invention.
Claims (10)
1. a Multi-core heavy-duty diode shell, comprising:
Ceramic frame, places many microstrip lines in framework, establish the first bonding region, establish a plurality of leads outside frame inside frame;
Substrate, be arranged on described ceramic frame inside bottom, there is ceramic matrix, and described by metallized for described ceramic matrix uper side surface and downside surface, described uper side surface forms multiple isolated area and the second bonding region, and described isolated area is for holding described chip.
2. Multi-core heavy-duty diode shell according to claim 1, is characterized in that: also comprise heat sink, and for placing described ceramic frame and described substrate, wherein, described described downside surface that is heat sink and described substrate directly contacts.
3. Multi-core heavy-duty diode shell according to claim 2, is characterized in that: the matrix of described substrate is the ceramic matrix of high heat conductance, and its downside surface and described ceramic frame to be heat sinkly connected with described by soldering.
4. Multi-core heavy-duty diode shell according to claim 1, is characterized in that: also comprise and can cut down weld-ring, describedly cuts down weld-ring is fixed on described ceramic frame upper surface by soldering.
5. the Multi-core heavy-duty diode shell according to any one of claim 1-4, is characterized in that: described microstrip line layer thickness scope is 10 μm ~ 12 μm.
6. the Multi-core heavy-duty diode shell according to any one of claim 1-4, is characterized in that: the described ceramic matrix of described ceramic frame and described substrate is for one-body molded based on AlN High Temperature Co Fired Ceramic technique.
7. a Multi-core heavy-duty diode shell preparation method, for making the Multi-core heavy-duty diode shell as described in any one of claim 1-6, comprise: adopt High Temperature Co Fired Ceramic process integration to form ceramic frame and ceramic matrix, utilize heat sink at described substrate downside surface brazing metal and can weld-ring be cut down in ceramic frame upper surface soldering sealing-in.
8. a multi-die packages method, comprise: provide just like the Multi-core heavy-duty diode shell described in any one of claim 1-5 and multiple chip, chip described in each in described multiple chip is fixedly connected on a corresponding described isolated area of described substrate by welding, bonding or gluing.
9. Multi-core heavy-duty diode shell according to claim 8, it is characterized in that: described multiple chip and described package assembling are carried out being electrically connected comprise with spun gold described first bonding region and described second bonding region carried out be electrically connected, with spun gold, the second bonding region is electrically connected with the isolated area of described chip encapsulation assembly in one or more, be electrically connected described first bonding region, two bonding regions or described isolated area to described microstrip line by spun gold, be electrically connected to described lead-in wire by described microstrip line.
10. chip encapsulation assembly according to claim 8 or claim 9, it is characterized in that: also comprise and multiple chip is electrically connected, be specially: with lead-in wire, multiple described second bonding region is electrically connected with multiple described first bonding region, then is electrically connected with the bonding region of spun gold by multiple described second package assembling.
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| CN201410843678.6A CN104600037A (en) | 2014-12-30 | 2014-12-30 | Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method |
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| CN201410843678.6A CN104600037A (en) | 2014-12-30 | 2014-12-30 | Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method |
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| CN106631036A (en) * | 2016-12-07 | 2017-05-10 | 中国电子科技集团公司第五十五研究所 | Sintering method of high-temperature co-firing aluminum nitride ceramics |
| CN107481989A (en) * | 2017-06-26 | 2017-12-15 | 中国电子科技集团公司第五十五研究所 | A kind of high bending fatigue strength ceramic package outer lead and preparation method |
| CN109698167A (en) * | 2018-12-21 | 2019-04-30 | 河北中瓷电子科技有限公司 | The method of stress release during alleviation ceramic package |
| CN109727924A (en) * | 2018-12-27 | 2019-05-07 | 江苏省宜兴电子器件总厂有限公司 | A kind of band AlN and Si transition plate ceramic shell encapsulating structure |
| CN111933577A (en) * | 2020-07-15 | 2020-11-13 | 中国电子科技集团公司第二十九研究所 | Local large-area welding board-level interconnection integration method for airtight packaging unit |
| CN112582350A (en) * | 2019-09-29 | 2021-03-30 | 江苏长电科技股份有限公司 | Cavity type packaging structure and packaging method |
| CN113612110A (en) * | 2020-04-17 | 2021-11-05 | 浙江睿熙科技有限公司 | VCSEL chip and manufacturing method thereof |
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| CN111933577A (en) * | 2020-07-15 | 2020-11-13 | 中国电子科技集团公司第二十九研究所 | Local large-area welding board-level interconnection integration method for airtight packaging unit |
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