CN105355612A - Digital and analog mixed high-density housing - Google Patents
Digital and analog mixed high-density housing Download PDFInfo
- Publication number
- CN105355612A CN105355612A CN201510774098.0A CN201510774098A CN105355612A CN 105355612 A CN105355612 A CN 105355612A CN 201510774098 A CN201510774098 A CN 201510774098A CN 105355612 A CN105355612 A CN 105355612A
- Authority
- CN
- China
- Prior art keywords
- cut down
- high density
- numerical model
- model analysis
- kovar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- 238000013461 design Methods 0.000 claims abstract description 10
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 229910017944 Ag—Cu Inorganic materials 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000003466 welding Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005553 drilling Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000004080 punching Methods 0.000 claims description 6
- 238000007766 curtain coating Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 230000005672 electromagnetic field Effects 0.000 claims description 4
- 239000000047 product Substances 0.000 claims description 4
- 230000008054 signal transmission Effects 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 229910000833 kovar Inorganic materials 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
Abstract
The invention relates to a digital and analog mixed high-density housing and a preparation method. The housing structurally comprises a Kovar lead 1, a Kovar solder ring 2, a ceramic piece 3 and a Kovar heat sink 4, wherein the nickel plated Kovar lead 1 and Kovar heat sink 4 are welded to the back side of the ceramic piece 3 at the high temperature of 800 DEG C via an Ag-Cu solder material, and the Kovar solder ring 2 is welded to the metal pattern at the front side of the ceramic piece 3 under the same condition. The housing has the advantages that RF channels are of the coplanar waveguide transmission structure, and the upper and lower portions of each RF channel are provided with grounding layers respectively to increase the signal isolation degree in the same layer and between the adjacent layers; the high-speed RF signal channels are designed in the differential wiring manner, differential signals are laid independently in certain layer, the design value of the differential mode impedance is 100ohm, and the anti-interference capability is higher; and an independent power layer is designed, and prevented from influence of high-frequency signals, and ripples of a power supply are reduced.
Description
Technical field
What the present invention related to is a kind of numerical model analysis high density shell for encapsulating numerical model analysis multi-chip.
Background technology
Pottery four-armed olfactometer (CQFP), as a kind of common packing forms, all has a wide range of applications all the time.But existing CQFP class shell operating frequency is many at below GHz, be not specifically designed to the passage of transmitting high-frequency signal, all pins are unified low frequency designs, and do not have good isolation between pin, cannot be used for the encapsulation of high frequency chip.In addition, multi-chip package requires that a shell has the function of package high frequency analog signal, high-speed digital signal simultaneously, and existing CQFP class shell is difficult to reach these requirements.
Summary of the invention
What the present invention proposed is a kind of numerical model analysis high density shell; can according to the structure of the chip of required encapsulation; its object is intended to the above-mentioned defect overcome existing for prior art; adopt and design high-frequency signal passage and high-speed digital signal passage respectively, meet the requirement of numerical model analysis multi-chip package.
Technical solution of the present invention: numerical model analysis high density shell, its structure comprises can cut down lead-in wire 1, can cut down welding ring 2, ceramic member 3, can cut down heat sink 4; Cut down lead-in wire wherein after nickel plating 1 with can cut down heat sink 4 are welded on ceramic member 3 in the lump under the 800 DEG C of hot conditionss back side by Ag-Cu solder, welding ring 2 can be cut down and be welded under identical condition on the metallic pattern in ceramic 3 fronts.
Its preparation method, comprises the steps:
1) adopt machine work legal system for cutting down lead-in wire 1, welding ring 2 can be cut down and heat sink 4 can be cut down, and conventional cleaning is carried out to above-mentioned metal parts, stand-by after nickel plating, as shown in Figure 1, 2;
2) according to HTCC technique, adopt low-loss ceramic material curtain coating green band, make the aluminium oxide ceramics part that internal wiring meets the demands, and to stand-by after its nickel plating; As shown in Figure 3;
3) by the cut down lead-in wire after nickel plating 1 with can cut down heat sink 4 are welded on ceramic member in the lump under about the 800 DEG C hot conditionss back side by Ag-Cu solder, then welding ring 2 can be cut down be welded on the metallic pattern in ceramic 3 fronts under identical condition;
4) above-mentioned soldering semi-finished product are made form numerical model analysis high density shell through conventional electronickelling, gold process.
Advantage of the present invention: the design of shell radio-frequency channel adopts coplanar wave guide transmission structure, and designs ground plane respectively the upper and lower of radio-frequency channel, to increase and same layer, the isolation of signal between adjacent layer; The design of high-speed radio-frequency signalling channel adopts the mode of difference cabling, and differential signal is in certain one deck independent wiring, and differential-mode impedance design load is 100 ohm, and has stronger antijamming capability; Design independent bus plane, prevent it to be subject to the impact of high-frequency signal, reduce power supply ripple;
The invention provides 240 the I/O ports altogether comprising radio frequency pin, high-speed digital signal pin, power pins and ground pin.Each generic port individually designs to realize the high-speed transfer of digital signal, the low-loss transmission of radiofrequency signal, by the good isolation of radiofrequency signal and power supply, low frequency signal, realizes the requirement of Power Integrity (PI) and signal integrity (SI).
Accompanying drawing explanation
Fig. 1 is the schematic diagram of numerical model analysis high density shell.
Fig. 2 is the rearview of Fig. 1.
Fig. 3 is the typical flow chart of HTCC technique.
Fig. 4 is the structural representation of numerical model analysis high density shell radio frequency signal channels.
Fig. 5 is the structural representation of numerical model analysis high density shell difference cabling.
To be that can to cut down lead-in wire, 2 be that can to cut down welding ring, 3 are ceramic members, 4 be in figure 1 that can to cut down ground level, 7 that is heat sink, 5 to be two radio frequency signal channels, 6 be radiofrequency signal both sides are two pairs of difference cablings.
Embodiment
As shown in Figure 1 and Figure 2, numerical model analysis high density shell, its structure comprises can cut down lead-in wire 1, can cut down welding ring 2, ceramic member 3, can cut down heat sink 4; Cut down lead-in wire wherein after nickel plating 1 with can cut down heat sink 4 are welded on ceramic member 3 in the lump under the 800 DEG C of hot conditionss back side by Ag-Cu solder, welding ring 2 can be cut down and be welded under identical condition on the metallic pattern in ceramic 3 fronts.
The preparation method of numerical model analysis high density shell, comprises the steps:
1) adopt machine work legal system for cutting down lead-in wire 1, welding ring 2 can be cut down and heat sink 4 can be cut down, and conventional cleaning is carried out to above-mentioned metal parts, stand-by after nickel plating, as shown in Figure 1, 2;
2) according to HTCC technique, adopt low-loss ceramic material curtain coating green band, make the aluminium oxide ceramics part that internal wiring meets the demands, and to stand-by after its nickel plating; As shown in Figure 3
3) by the cut down lead-in wire after nickel plating 1 with can cut down heat sink 4 are welded on ceramic member in the lump under about the 800 DEG C hot conditionss back side by Ag-Cu solder, then welding ring 2 can be cut down be welded on the metallic pattern in ceramic member 3 front under identical condition;
4) above-mentioned soldering semi-finished product are made form numerical model analysis high density shell through conventional electronickelling gold, gold process.Wherein the flow process of electronickelling gold is: copper wire binding---electrochemical deoiling---OP cleaning---hot water cleaning---hydrochloric acid activation---nickel preplating---nickel plating---gold-plated in advance---gold-plated---oven dry.
Be illustrated in figure 3 HTCC technological process, comprise following processing step:
1) the slurry curtain coating mixed to be made a living porcelain band by casting machine;
2) precompressed is carried out after green band being cut into uniform sizes;
3) the porcelain band punching will pressed through in advance, punching is divided into laser drilling and mechanical punching, and laser drilling is applied more widely because its higher precision has;
4) silk-screen printing technique is utilized to carry out filling perforation and printing on the porcelain band of laser drilling;
5) several the green bands printed are carried out lamination, and be integrated in the effect laminated of temperature and pressure;
6) with raw machine of cutting, several the porcelain bands being laminated to one are cut into several single products;
7) in sintering furnace, the single product cut is burnt for ripe porcelain.
As shown in Figure 4, ceramic member 3 draws two radio signal transmission passages 5, and the neighbouring layer of two described radio signal transmission passages 5 is all designed to the ground level 6 of radiofrequency signal both sides; Emulated by electromagnetic field simulation software HFSS and optimize the spacing of the width of holding wire and the ground level 6 of holding wire and radiofrequency signal both sides, to realize the characteristic impedance of input/output port 50 ohm, thus obtaining less voltage standing wave ratio and insertion loss; No matter this coplanar wave guide transmission structure with ground plate is between same layer two radiofrequency signal, or between two of different layers radiofrequency signals, can obtain good isolation.
As shown in Figure 5, ceramic member 3 draws multipair difference cabling 7, impedance computation software and electromagnetic field simulation software is utilized to calculate its live width and distance between centers of tracks, the differential-mode impedance of often pair of difference cabling 7 is made to be 100 ohm, and consider that difference walks the consistency of phase of line, in often pair of difference cabling 7, two signal line are designed to equal length.
These difference cablings in this numerical model analysis high density shell are used for transmitting high speed digital signal, have higher transmission speed and antijamming capability.
Claims (6)
1. numerical model analysis high density shell, it is characterized in that comprising can cut down lead-in wire, welding ring can be cut down, ceramic member, can cut down heat sink; Cut down lead-in wire wherein after nickel plating with can cut down the heat sink back side being welded on ceramic member in the lump by Ag-Cu solder under 800 DEG C of hot conditionss, welding ring can be cut down and be welded under identical condition on the metallic pattern in ceramic front.
2. the preparation method of numerical model analysis high density shell as claimed in claim 1, is characterized in that comprising the steps:
1) adopt machine work legal system for cutting down lead-in wire, welding ring can be cut down and can cut down heat sink, and conventional cleaning is carried out to above-mentioned metal parts, stand-by after nickel plating;
2) according to HTCC technique, adopt low-loss ceramic material curtain coating green band, make the aluminium oxide ceramics part that internal wiring meets the demands, and to stand-by after its nickel plating;
3) by the cut down lead-in wire after nickel plating with can cut down the heat sink back side being welded on ceramic member in the lump by Ag-Cu solder under about 800 DEG C hot conditionss, then welding ring can be cut down be welded on the metallic pattern in ceramic front under identical condition;
4) above-mentioned soldering semi-finished product are done to form numerical model analysis high density shell through conventional electronickelling gold, gold process.
3. the preparation method of numerical model analysis high density shell according to claim 2, is characterized in that described HTCC technological process, comprises following processing step:
1) the slurry curtain coating mixed to be made a living porcelain band by casting machine;
2) precompressed is carried out after green band being cut into uniform sizes;
3) the porcelain band punching will pressed through in advance, punching is divided into laser drilling and mechanical punching, and laser drilling is applied more widely because its higher precision has;
4) silk-screen printing technique is utilized to carry out filling perforation and printing on the porcelain band of laser drilling;
5) several the green bands printed are carried out lamination, and be integrated in the effect laminated of temperature and pressure;
6) with raw machine of cutting, several the porcelain bands being laminated to one are cut into several single products;
7) in sintering furnace, the single product cut is burnt for ripe porcelain.
4. described numerical model analysis high density shell according to claim 1, it is characterized in that described ceramic member draws two radio signal transmission passages, the neighbouring layer of two described radio signal transmission passages is all designed to the ground level of radiofrequency signal both sides; Emulated by electromagnetic field simulation software HFSS and optimize the spacing of the width of holding wire and the ground level of holding wire and radiofrequency signal both sides, to realize the characteristic impedance of input/output port 50 ohm, thus obtaining less voltage standing wave ratio and insertion loss; No matter this coplanar wave guide transmission structure with ground plate is between same layer two radiofrequency signal, or between two of different layers radiofrequency signals, can obtain good isolation.
5. described numerical model analysis high density shell according to claim 1; it is characterized in that described ceramic member draws multipair difference cabling; impedance computation software and electromagnetic field simulation software is utilized to calculate its live width and distance between centers of tracks; the differential-mode impedance of often pair of difference cabling is made to be 100 ohm; and consider that difference walks the consistency of phase of line, in often pair of difference cabling, two signal line are designed to equal length.
6. numerical model analysis high density shell according to claim 5, it is characterized in that certain one deck independent wiring in the middle of described difference cabling, and differential impedance design load is 100 ohm, has stronger antijamming capability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510774098.0A CN105355612A (en) | 2015-11-13 | 2015-11-13 | Digital and analog mixed high-density housing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510774098.0A CN105355612A (en) | 2015-11-13 | 2015-11-13 | Digital and analog mixed high-density housing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105355612A true CN105355612A (en) | 2016-02-24 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510774098.0A Pending CN105355612A (en) | 2015-11-13 | 2015-11-13 | Digital and analog mixed high-density housing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105355612A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129029A (en) * | 2016-07-14 | 2016-11-16 | 中国电子科技集团公司第五十五研究所 | It is applied to the pottery four limit flat non-pin type shell of Ku wave band |
| CN106206546A (en) * | 2016-07-14 | 2016-12-07 | 中国电子科技集团公司第五十五研究所 | A kind of ceramic wall type shell being applied to 18GHz |
| CN106409691A (en) * | 2016-10-26 | 2017-02-15 | 中国电子科技集团公司第五十五研究所 | Method for preparing metal layers with different thicknesses at different positions of inner cavity of packaging housing |
| CN107204322A (en) * | 2017-05-03 | 2017-09-26 | 中国电子科技集团公司第五十五研究所 | Multi-chip integrated form CQFP ceramic packages and preparation method thereof |
| CN110854669A (en) * | 2019-12-10 | 2020-02-28 | 武汉优信技术股份有限公司 | TO tube seat packaging structure and manufacturing method thereof |
| CN112987198A (en) * | 2021-02-26 | 2021-06-18 | 西安微电子技术研究所 | High-reliability optical transceiving integrated circuit |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5849396A (en) * | 1995-09-13 | 1998-12-15 | Hughes Electronics Corporation | Multilayer electronic structure and its preparation |
| CN102157396A (en) * | 2009-12-18 | 2011-08-17 | 英特尔公司 | Apparatus and method for embedding components in small-form-factor, system-on-packages |
| CN103021973A (en) * | 2012-12-12 | 2013-04-03 | 中国电子科技集团公司第五十八研究所 | Airtightness packaging radiating structure of integrated circuit |
| CN103441077A (en) * | 2013-07-15 | 2013-12-11 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing shell of microwave high-power pipe |
| CN104051352A (en) * | 2014-06-13 | 2014-09-17 | 中国电子科技集团公司第五十五研究所 | Millimeter wave chip carrier based on high temperature co-fired ceramic and manufacturing method thereof |
| CN204167287U (en) * | 2014-11-17 | 2015-02-18 | 福建省南平市三金电子有限公司 | A kind of highly reliable devitrified glass IC package casing |
| US20150090478A1 (en) * | 2013-09-30 | 2015-04-02 | Joseph Ambrose Wolf | Silver thick film paste hermetically sealed by surface thin film multilayer |
| CN104600037A (en) * | 2014-12-30 | 2015-05-06 | 中国电子科技集团公司第五十五研究所 | Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method |
-
2015
- 2015-11-13 CN CN201510774098.0A patent/CN105355612A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5849396A (en) * | 1995-09-13 | 1998-12-15 | Hughes Electronics Corporation | Multilayer electronic structure and its preparation |
| CN102157396A (en) * | 2009-12-18 | 2011-08-17 | 英特尔公司 | Apparatus and method for embedding components in small-form-factor, system-on-packages |
| CN103021973A (en) * | 2012-12-12 | 2013-04-03 | 中国电子科技集团公司第五十八研究所 | Airtightness packaging radiating structure of integrated circuit |
| CN103441077A (en) * | 2013-07-15 | 2013-12-11 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing shell of microwave high-power pipe |
| US20150090478A1 (en) * | 2013-09-30 | 2015-04-02 | Joseph Ambrose Wolf | Silver thick film paste hermetically sealed by surface thin film multilayer |
| CN104051352A (en) * | 2014-06-13 | 2014-09-17 | 中国电子科技集团公司第五十五研究所 | Millimeter wave chip carrier based on high temperature co-fired ceramic and manufacturing method thereof |
| CN204167287U (en) * | 2014-11-17 | 2015-02-18 | 福建省南平市三金电子有限公司 | A kind of highly reliable devitrified glass IC package casing |
| CN104600037A (en) * | 2014-12-30 | 2015-05-06 | 中国电子科技集团公司第五十五研究所 | Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129029A (en) * | 2016-07-14 | 2016-11-16 | 中国电子科技集团公司第五十五研究所 | It is applied to the pottery four limit flat non-pin type shell of Ku wave band |
| CN106206546A (en) * | 2016-07-14 | 2016-12-07 | 中国电子科技集团公司第五十五研究所 | A kind of ceramic wall type shell being applied to 18GHz |
| CN106409691A (en) * | 2016-10-26 | 2017-02-15 | 中国电子科技集团公司第五十五研究所 | Method for preparing metal layers with different thicknesses at different positions of inner cavity of packaging housing |
| CN107204322A (en) * | 2017-05-03 | 2017-09-26 | 中国电子科技集团公司第五十五研究所 | Multi-chip integrated form CQFP ceramic packages and preparation method thereof |
| CN110854669A (en) * | 2019-12-10 | 2020-02-28 | 武汉优信技术股份有限公司 | TO tube seat packaging structure and manufacturing method thereof |
| CN112987198A (en) * | 2021-02-26 | 2021-06-18 | 西安微电子技术研究所 | High-reliability optical transceiving integrated circuit |
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| C06 | Publication | ||
| PB01 | Publication | ||
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Application publication date: 20160224 |