CN103441077A - Method for manufacturing shell of microwave high-power pipe - Google Patents
Method for manufacturing shell of microwave high-power pipe Download PDFInfo
- Publication number
- CN103441077A CN103441077A CN2013102954734A CN201310295473A CN103441077A CN 103441077 A CN103441077 A CN 103441077A CN 2013102954734 A CN2013102954734 A CN 2013102954734A CN 201310295473 A CN201310295473 A CN 201310295473A CN 103441077 A CN103441077 A CN 103441077A
- Authority
- CN
- China
- Prior art keywords
- high power
- microwave high
- power pipe
- copper
- pipe shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Ceramic Products (AREA)
Abstract
The invention provides a method for manufacturing a shell of a microwave high-power pipe. Existing commercialized tungsten copper or molybdenum copper or other copper-based composite materials cover the two sides of copper foil, and 'Cu-Laminate' heat sink of the copper-based composite materials of a sandwich structure is synchronously formed in the braze welding process of a semi-finished product of the shell. The method has the advantages that the braze-welded shell is in a stress state with the safe strength, and heat conductivity is at least increased by 10% compared with heat conductivity of a shell that only core layer alloy is used. Heat dissipation capacity, air tightness and long-term reliability of the shell manufactured according to the process route and the method can meet the packaging requirements of a high-power-density microwave high-power device. Due to the fact that core layer materials used for forming 'Cu-Laminate' heat sink are mature commercialized tungsten copper and molybdenum copper, the cost advantage is possessed, and material procurement risks can be greatly reduced.
Description
Technical field
The present invention is a kind of manufacture method of microwave high power pipe shell, is for the manufacture method of the high power density microwave enclosure of encapsulation silicon LDMOS power tube or GaN power tube, belongs to microwave high power Manifold technology field.
Background technology
Usually adopt metal heat sink welding ceramics mount structure for the microwave high power pipe shell that encapsulates silicon LDMOS power tube or GaN power tube, the two formed air-tight cavity provides mechanical support and environmental protection for chip and internal circuit.Be welded with metal lead wire on ceramic frame and realize input and output feed port and isolation mutually.The Cu-base composites of heat sink employing high heat conductance and thermal coefficient of expansion and pottery coupling, become the main heat dissipation channel of device and guarantee that shell is in safe and reliable low-stress state.
Have the representational ceramic frame part of technique in the microwave high power pipe shell and adopt high temperature co-firing multi-layer ceramics (High Temperature Cofired Ceramic is called for short HTCC) technique to make, therefore, this type of shell is also referred to as the multi-layer ceramics shell.Existing typical microwave high power pipe multi-layer ceramics envelope process flow process (as shown in Figure 1).
Making microwave high power pipe shell heat sink material used in prior art is mainly Cu-base composites.Heat sink material can be divided into two classes according to its process of preparing, and the first kind is tungsten copper or molybdenum copper product prepared by infiltration method or powder metallurgic method, and its thermal conductivity is about (160~200) W/mK, and thermal coefficient of expansion is at (6~9) X10
-6adjustable between/K; Equations of The Second Kind is Cu-Mo-Cu material (referred to as the CMC material), Cu-MoCu-Cu material (referred to as the CPC material) and the Cu-WCu-Cu material etc. of the sandwich structure that adopts the methods such as soldering, diffusion welding (DW) or hot rolling to prepare, has in document and materials is called to " Cu-Laminate ".
First kind tungsten copper or molybdenum copper product have been used more than more than 20 year in the Electronic Packaging industry, technical development very ripe, and manufacturer is numerous.But, along with device further develops to miniaturization and high power, the heat conductivility of tungsten copper, molybdenum copper product can not meet the heat radiation requirement of the microwave high power pipe shell of high power density.
Equations of The Second Kind " Cu-Laminate " material is to grow up on the basis of first kind material.The characteristic that it has utilized tungsten copper or molybdenum copper and Ceramics Material Heat Expansion Coefficient to be complementary on the one hand, utilized the good heatsink transverse ability of top layer copper foil on the other hand, because the thermal conductivity of copper is 398W/mK, is approximately the twice of tungsten copper.Due to the good characteristic of " Cu-Laminate ", become the main flow heat sink material of the microwave high power pipe shell of high power density at present.But owing to relatively evening occurring, alternative ripe supplier wants much less due to Equations of The Second Kind " Cu-Laminate " material.
The prior art of making shell is that the pre-workpieces that the processing of " Cu-Laminate " blank machine is obtained connects as one with other parts such as ceramic frame, lead-in wire and sealing rings in the soldering processes process, becomes the shell semi-finished product.Therefore, at first the microwave high power pipe shell of making high power density will select and purchase suitable " Cu-Laminate " heat sink part.
It is reported, Japanese material supplier is used method for welding preparation " Cu-laminate " blank usually, and domestic material supplier adopts High temperature diffusion weldering or hot-rolling method preparation " Cu-Laminate " blank usually.While making " Cu-Laminate " blank, depending on the thermal coefficient of expansion of the chip of encapsulation and connected pottery, regulate the ratio between tungsten, copper and molybdenum, copper, to guarantee between different materials coupling mutually.Because the many reasons such as difference of reason, price factor and the material supplier technology level of Commercial Secret Protection between the rival are limit, on market, can select and directly buying to " Cu-Laminate " heat sink material there is no the needs of the microwave high power pipe shell of the complete research and production high power density of method.
Summary of the invention
What the present invention proposed is a kind of microwave high power pipe shell and manufacture method, its objective is the Cu-base composites that obtains a kind of high heat conductance and thermal coefficient of expansion and pottery coupling, use it for the shell of making the encapsulation microwave high power device, Shell and reliability can be guaranteed, good heat dispersion can be obtained again.
Technical solution of the present invention: a kind of manufacture method of microwave high power pipe shell comprises following processing step:
1) prepare metal parts, comprise the cut down sealing ring P that is of a size of 0.1mm * 21.5mm * 8.5mm
1, be of a size of the cut down lead-in wire P of 0.1mm * 5.1mm * 12.7mm
2, be of a size of the tungsten copper WCu15 sheet P of 1.52mm * 34.0mm * 9.8mm
5, be of a size of the oxygen-free copper paillon foil P of 0.5mm * 34.0mm * 9.8mm thickness
6;
2) to above-mentioned metal parts, carry out after conventional cleaning, annealing and Nickel Plating Treatment stand-by;
3) according to conventional H TCC multi-layer ceramics technique manufactured size, be the 95% aluminium oxide ceramics frame P that 1.2mm * 21.7mm * 9.8mm wall thickness is 2.0mm
3;
4) to 95% aluminium oxide ceramics frame P
3carry out after nickel plating stand-by;
5) by the ceramic part of above-mentioned steps 2 metal partss and above-mentioned steps 4 according to the accompanying drawing structure, by using the AgCu28 braze, 810 ℃~830 ℃ solderings, be shell semi-finished product B.Wherein, the heat sink part of shell is by WCu15 sheet P
5as sandwich layer, its upper and lower surface covers oxygen-free copper paillon foil P
6form;
6) shell semi-finished product B process
conventionalthe nickel-gold electroplating order is made becomes microwave high power pipe shell finished product, after test and screening, for encapsulating silicon LDMOS power tube and GaN power tube.
Advantage of the present invention:
1) owing to forming commercial tungsten copper, the molybdenum copper product that " Cu-Laminate " heat sink used core material is maturation in the present invention, compare and can find more material supplier with direct purchase " Cu-Laminate " heat sink material, therefore, have more cost advantage energy decrease material purchases risk;
2) synchronous formation in the shell brazing process that " Cu-Laminate " formed is heat sink, therefore, the optimal design of the thickness of the core alloys of formation " Cu-Laminate " and the thickness of top layer copper foil, need to be with whole shell in brazing process, the close combination of the stress-strain analysis in especially soldering cooling procedure.Guarantee that soldering rear casing integral body is in lower residual stress state.
The accompanying drawing explanation
Fig. 1 is existing typical microwave high power pipe shell process chart.
Fig. 2-1st, the upward view of existing microwave high power pipe shell semi-finished product A structural representation.
Fig. 2-2nd, the front view of existing microwave high power pipe shell semi-finished product A structural representation.
Fig. 2-3rd, the left view of existing microwave high power pipe shell semi-finished product A structural representation.
Fig. 3 is microwave high power pipe shell process chart of the present invention.
Fig. 4-1st, the upward view of microwave high power pipe shell semi-finished product B structure of the present invention.
Fig. 4-2nd, the front view of microwave high power pipe shell semi-finished product B structure of the present invention.
Fig. 4-3rd, the left view of microwave high power pipe shell semi-finished product B structure of the present invention.
P in figure
1to cut down sealing ring; P
2to cut down lead-in wire; P
3it is the aluminium oxide ceramics frame; P
4be the heat sink ready-made part of Cu-base composites of commercial sandwich structure, material is copper molybdenum copper (CMC) or copper tungsten copper copper (Cu-WCu-Cu) or copper molybdenum copper copper (Cu-MoCu-Cu); P
5tungsten copper WCu15; P
6it is the oxygen-free copper paillon foil.
Embodiment
Contrast Fig. 4-1, Fig. 4-2 and Fig. 4-3, microwave high power pipe shell semi-finished product B, its structure comprises can cut down sealing ring P
1; Can cut down lead-in wire P
2; Aluminium oxide ceramics frame P
3; Tungsten copper WCu15 P
5; Oxygen-free copper paillon foil P
6, aluminium oxide ceramics frame P wherein
3on what weld is to cut down sealing ring P
1, can cut down sealing ring P
1on the cover plate of metal of welding or pottery, aluminium oxide ceramics frame P
3the metal heat sink welded below it forms the cavity body structure of upper shed, and this cavity body structure is for holding chip and the inner match circuit of GaN or Si microwave high power device; It is tungsten copper WCu15 P that described metal heat sink is specially a sandwich layer
5, upper and lower top layer is oxygen-free copper paillon foil P
6sandwich structure, can cut down the lead-in wire P
2it is the input/output interface of connection function of electrifying in device.
When shell is used, aluminium oxide ceramics frame P
3on the cut down sealing frame P that welds
1seal, after the micro-assembling that completes chip and internal circuit, can cut down sealing ring P
1on the cover plate of metal of welding or pottery, thereby make whole shell form airtight cavity body structure fully, avoid impact and the erosion of dust, gas or liquid in environment with protection chip and internal circuit.Can cut down lead-in wire P
2it is the input/output interface of connection function of electrifying in device.
Embodiment
At first according to product structure and overall dimension shown in Fig. 4-1, Fig. 4-2 and Fig. 4-3, purchase following metal parts: the cut down sealing ring P that is of a size of 0.1mm * 21.5mm * 8.5mm
1, be of a size of the cut down lead-in wire P of 0.1mm * 5.1mm * 12.7mm
2; Be of a size of the tungsten copper WCu15 sheet P of 1.52mm * 34.0mm * 9.8mm
5; Be of a size of the oxygen-free copper paillon foil P of 0.5mm * 34.0mm * 9.8mm thickness
6.To above-mentioned metal parts, carry out after conventional cleaning, annealing and Nickel Plating Treatment stand-by.
Secondly, according to the conventional H TCC multi-layer ceramics technique manufactured size shown in Fig. 3, be the 95% aluminium oxide ceramics frame P that 1.2mm * 21.7mm * 9.8mm wall thickness is 2.0mm
3.To 95% aluminium oxide ceramics frame P
3carry out after nickel plating stand-by.
Then, part can be cut down to sealing ring P
1; Can cut down lead-in wire P
2; Aluminium oxide ceramics frame P
3; Tungsten copper WCu15 P
5; Oxygen-free copper paillon foil P
6according to Fig. 4-1, it is shell semi-finished product B 810 ℃~830 ℃ solderings that the shell mechanism shown in Fig. 4-2 and Fig. 4-3 is used silver-copper brazing alloy AgCu28.
Shell semi-finished product B makes and becomes microwave high power pipe shell finished product through the nickel-gold electroplating order, after test and screening, and can be for encapsulating silicon LDMOS power tube and GaN power tube.
As previously mentioned, different for the thermal coefficient of expansion of institute's welding ceramics material and packaged chip, can amplify out a series of embodiment according to following scheme.As adjusted the WCu10 that " Cu-Laminate " heat sink core material is thickness 0.4mm~1.6mm; The Mo70Cu that adjustment " Cu-Laminate " heat sink core material is thickness 0.4mm~1.6mm; The thickness of adjusting copper foil is 0.2mm~0.8mm.
In the present invention, improve to make on heat sink material is selected by the shell fabrication processing and have more flexibility, the shell manufacturer can be according to design feature and the actual requirement of product, design " Cu-Laminate " heat sink composition and ratio independently, (as the recommended range of above-mentioned given layers of material).Owing to forming commercial tungsten copper, the molybdenum copper product that " Cu-Laminate " heat sink used core material is maturation in the present invention, compare and can find more material supplier with direct purchase " Cu-Laminate " heat sink material, therefore, have more cost advantage energy decrease material purchases risk.
As everyone knows, the thermal coefficient of expansion of above-mentioned two class Cu-base composites can be regulated by the ratio changed between tungsten, copper or the materials such as molybdenum, copper, the ceramic frame material welded with cooperation or the thermal coefficient of expansion of packaged chip.But due to the heat sink synchronous formation in the shell brazing process of process of the present invention formed " Cu-Laminate ", therefore, the optimal design of the thickness of the core alloys of formation " Cu-Laminate " and the thickness of top layer copper foil, need to be with whole shell in brazing process, the close combination of the stress-strain analysis in especially soldering cooling procedure.Guarantee that soldering rear casing integral body is in lower residual stress state.
Claims (6)
1. the manufacture method of a microwave high power pipe shell is characterized in that the method comprises following processing step:
1) prepare metal parts, comprise and can cut down sealing ring, can cut down lead-in wire, tungsten copper WCu15 sheet, oxygen-free copper paillon foil;
2) to above-mentioned metal parts, carry out after conventional cleaning, annealing and Nickel Plating Treatment stand-by;
3) according to conventional H TCC multi-layer ceramics technique manufactured size, be the 95% aluminium oxide ceramics frame that 1.2mm * 21.7mm * 9.8mm wall thickness is 2.0mm;
4) to 95% aluminium oxide ceramics frame, carry out after nickel plating stand-by;
5) by the ceramic part of above-mentioned steps 2 metal partss and above-mentioned steps 4 according to the accompanying drawing structure, by using the AgCu28 braze, 810 ℃~830 ℃ solderings, be microwave high power pipe shell semi-finished product (B); Wherein, the heat sink part of shell is by the WCu15 sheet as sandwich layer, and its upper and lower surface covers the oxygen-free copper paillon foil and forms;
6) microwave high power pipe shell semi-finished product (B) are made and are become microwave high power pipe shell finished product through conventional nickel-gold electroplating order, after test and screening, for encapsulating silicon LDMOS power tube and GaN power tube.
2. the manufacture method of a kind of microwave high power pipe shell according to claim 1, it is characterized in that in the brazing process of processing step 5 microwave high power pipe shell semi-finished product (B), synchronously having formed sandwich layer and be WCu15 and upper and lower surface, to cover " Cu-Laminate " of oxygen-free copper paillon foil heat sink.
3. the manufacture method of a kind of microwave high power pipe shell according to claim 1, is characterized in that WCu15 or WCu10 or Mo70Cu that described " Cu-Laminate " heat sink core material is thickness 0.4mm~1.6mm.
4. the manufacture method of a kind of microwave high power pipe shell according to claim 1, the thickness that it is characterized in that described oxygen-free copper paillon foil is 0.2mm~0.8mm.
5. the manufacture method of a kind of microwave high power pipe shell according to claim 1, it is characterized in that the described sealing ring that cuts down is of a size of 0.1mm * 21.5mm * 8.5mm, can cut down lead-in wire and be of a size of 0.1mm * 5.1mm * 12.7mm, tungsten copper WCu15 chip size is 1.52mm * 34.0mm * 9.8mm, and the oxygen-free copper paillon foil is of a size of 0.5mm * 34.0mm * 9.8mm thickness.
6. the manufacture method of a kind of microwave high power pipe shell according to claim 1, is characterized in that described microwave high power pipe shell semi-finished product (B), and its structure comprises can cut down sealing ring; Can cut down lead-in wire; The aluminium oxide ceramics frame; Tungsten copper WCu15; The oxygen-free copper paillon foil, what wherein on the aluminium oxide ceramics frame, weld is to cut down sealing ring, can cut down metal of welding or ceramic cover plate on sealing ring, aluminium oxide ceramics frame and the metal heat sink welded below it form the cavity body structure of upper shed, and this cavity body structure is for holding chip and the inner match circuit of GaN or Si microwave high power device; It is tungsten copper WCu15 that described metal heat sink is specially a sandwich layer, and the sandwich structure that upper and lower top layer is the oxygen-free copper paillon foil can cut down lead-in wire and be the input/output interface of connection function of electrifying in device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2013102954734A CN103441077A (en) | 2013-07-15 | 2013-07-15 | Method for manufacturing shell of microwave high-power pipe |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2013102954734A CN103441077A (en) | 2013-07-15 | 2013-07-15 | Method for manufacturing shell of microwave high-power pipe |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103441077A true CN103441077A (en) | 2013-12-11 |
Family
ID=49694765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013102954734A Pending CN103441077A (en) | 2013-07-15 | 2013-07-15 | Method for manufacturing shell of microwave high-power pipe |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103441077A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134632A (en) * | 2014-08-01 | 2014-11-05 | 中国电子科技集团公司第五十五研究所 | Power tube shell and manufacturing method thereof |
CN105355612A (en) * | 2015-11-13 | 2016-02-24 | 中国电子科技集团公司第五十五研究所 | Digital and analog mixed high-density housing |
CN106206546A (en) * | 2016-07-14 | 2016-12-07 | 中国电子科技集团公司第五十五研究所 | A kind of ceramic wall type shell being applied to 18GHz |
CN107129162A (en) * | 2017-05-04 | 2017-09-05 | 中国电子科技集团公司第五十五研究所 | A kind of method for quantifying microwave components insulator airtight welding |
CN111933585A (en) * | 2020-07-23 | 2020-11-13 | 合肥圣达电子科技实业有限公司 | High-thermal-conductivity microwave TR assembly packaging shell and processing method thereof |
CN112071806A (en) * | 2020-08-31 | 2020-12-11 | 中国电子科技集团公司第五十五研究所 | High-power metal ceramic packaging shell for large-size multi-chip circuit and preparation method thereof |
CN112366183A (en) * | 2020-10-30 | 2021-02-12 | 中国电子科技集团公司第五十五研究所 | Microwave power amplification chip package of integrated metal tube shell and preparation method thereof |
CN114161090A (en) * | 2021-12-03 | 2022-03-11 | 深圳市宏钢机械设备有限公司 | Processing technology of kovar alloy and tungsten-copper alloy packaging shell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2152306Y (en) * | 1993-03-18 | 1994-01-05 | 机械电子工业部第十三研究所 | Heat sink sealing structure semiconductor power tube shell |
JP3500268B2 (en) * | 1997-02-27 | 2004-02-23 | 京セラ株式会社 | High frequency input / output terminal and high frequency semiconductor element storage package using the same |
CN201340851Y (en) * | 2009-01-22 | 2009-11-04 | 无锡天和电子有限公司 | Mounting type packaging casing of semiconductor power device |
CN102054804A (en) * | 2009-11-04 | 2011-05-11 | 江苏鼎启科技有限公司 | Cu/Mo/Cu heat sink material and preparation method thereof |
-
2013
- 2013-07-15 CN CN2013102954734A patent/CN103441077A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2152306Y (en) * | 1993-03-18 | 1994-01-05 | 机械电子工业部第十三研究所 | Heat sink sealing structure semiconductor power tube shell |
JP3500268B2 (en) * | 1997-02-27 | 2004-02-23 | 京セラ株式会社 | High frequency input / output terminal and high frequency semiconductor element storage package using the same |
CN201340851Y (en) * | 2009-01-22 | 2009-11-04 | 无锡天和电子有限公司 | Mounting type packaging casing of semiconductor power device |
CN102054804A (en) * | 2009-11-04 | 2011-05-11 | 江苏鼎启科技有限公司 | Cu/Mo/Cu heat sink material and preparation method thereof |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134632A (en) * | 2014-08-01 | 2014-11-05 | 中国电子科技集团公司第五十五研究所 | Power tube shell and manufacturing method thereof |
CN105355612A (en) * | 2015-11-13 | 2016-02-24 | 中国电子科技集团公司第五十五研究所 | Digital and analog mixed high-density housing |
CN106206546A (en) * | 2016-07-14 | 2016-12-07 | 中国电子科技集团公司第五十五研究所 | A kind of ceramic wall type shell being applied to 18GHz |
CN107129162A (en) * | 2017-05-04 | 2017-09-05 | 中国电子科技集团公司第五十五研究所 | A kind of method for quantifying microwave components insulator airtight welding |
CN111933585A (en) * | 2020-07-23 | 2020-11-13 | 合肥圣达电子科技实业有限公司 | High-thermal-conductivity microwave TR assembly packaging shell and processing method thereof |
CN112071806A (en) * | 2020-08-31 | 2020-12-11 | 中国电子科技集团公司第五十五研究所 | High-power metal ceramic packaging shell for large-size multi-chip circuit and preparation method thereof |
CN112366183A (en) * | 2020-10-30 | 2021-02-12 | 中国电子科技集团公司第五十五研究所 | Microwave power amplification chip package of integrated metal tube shell and preparation method thereof |
CN114161090A (en) * | 2021-12-03 | 2022-03-11 | 深圳市宏钢机械设备有限公司 | Processing technology of kovar alloy and tungsten-copper alloy packaging shell |
CN114161090B (en) * | 2021-12-03 | 2022-11-11 | 深圳市宏钢机械设备有限公司 | Processing technology of kovar alloy and tungsten-copper alloy packaging shell |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103441077A (en) | Method for manufacturing shell of microwave high-power pipe | |
CN205303452U (en) | Heat sink material of diamond copper | |
KR101612346B1 (en) | Cladding material and method for manufacturing the same, and heat sink using the cladding material | |
CN107546131B (en) | A kind of production method for encapsulating the metal shell of electronic building brick | |
CN103934534B (en) | The vacuum welding method of a kind of thick film substrate and power shell | |
CN106986650B (en) | Preparation method of microwave and hybrid circuit tube shell made of aluminum silicon carbide | |
CN107275319B (en) | LED chip flat heat pipe integrated packaging structure and preparation method thereof | |
CN104600037A (en) | Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method | |
CN102658409B (en) | Method for welding titanium alloy ring frame for electronic packaging shell | |
CN104973879A (en) | Method for jointing Al2O3 ceramic and ceramic sealing alloy | |
CN105307452B (en) | A kind of heat sink material is the manufacturing method of the ultra-thin soaking plate of bottom plate | |
CN103057202B (en) | Lamination-structured heat sink material and preparation method | |
CN107946248A (en) | A kind of ceramic contact pin shell mechanism and its manufacture method | |
CN104625623A (en) | Cu-W/Cu-Cu composite board preparation method | |
CN102489896A (en) | Medium-temperature brazing ribbon for brazing metal-based composite packaging material, as well as preparation method and brazing method thereof | |
CN201677551U (en) | Welding structure of Aluminum nitride (AlN) ceramics and metal | |
CN207818563U (en) | High power transistor package casing lead | |
CN206775883U (en) | A kind of aluminium silicon carbide shell that capping can be welded on spontaneous aluminium lamination | |
CN104269382B (en) | X-wave-band high-reliability surface-mounted type ceramic shell based on high-temperature co-firing ceramic technology | |
CN103193380A (en) | Method for sealing metal and glass for high/medium-temperature solar evacuated collector tube | |
CN103021973A (en) | Airtightness packaging radiating structure of integrated circuit | |
CN113540001A (en) | Kovar/silver alloy composite material for microelectronic packaging and preparation method thereof | |
CN103956344B (en) | A kind of ceramic pipe cap of suitable Parallel Seam Sealing Technology and its manufacture method | |
CN212695359U (en) | Welding structure | |
CN104259787A (en) | Preparation method of powdery deformable tungsten-copper composite material thin tube |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131211 |
|
RJ01 | Rejection of invention patent application after publication |