CN107546131B - A kind of production method for encapsulating the metal shell of electronic building brick - Google Patents
A kind of production method for encapsulating the metal shell of electronic building brick Download PDFInfo
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- CN107546131B CN107546131B CN201710677677.2A CN201710677677A CN107546131B CN 107546131 B CN107546131 B CN 107546131B CN 201710677677 A CN201710677677 A CN 201710677677A CN 107546131 B CN107546131 B CN 107546131B
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Abstract
The present invention provides a kind of production method for encapsulating the metal shell of electronic building brick, wherein the metal shell includes the diamond copper heat sink plate being fitted on the bottom plate of metal shell main body and metal shell body, the electronic building brick is mounted in the diamond copper heat sink plate, and soldering connection is used between the metal shell main body and diamond copper heat sink plate.Diamond copper heat sink plate of the present invention, its thermal expansion coefficient is low, density is low, thermal conductivity is high, it ensure that efficient heat-sinking capability while guaranteeing the matched coefficients of thermal expansion with electronic building brick, metal shell electronic building brick is avoided to fail because operating ambient temperature is excessively high, high performance components are met to the radiating requirements of metal shell, metal shell main body and diamond copper heat sink plate use Nickel Plating Treatment, and it is connected between the two using brazing mode, wherein nickel and silver-bearing copper eutectic solder price are relatively low, save the cost of manufacture of metal shell.
Description
Technical field
The invention belongs to the encapsulation fields of electronic building brick, and in particular to a kind of for encapsulating the metal shell of electronic building brick
Production method.
Background technique
Transmitting or receiving unit are its important components in spaceborne and airborne radar, transmitting or receiving unit category high density
Microwave circuit, internal component is numerous, and packing density is high, and chip dissipated power is big, this inevitably result in circuit calorific value improve,
Operating temperature rises, and stability declines.In the semiconductor device, as temperature increases, a possibility that failure, is increased, therefore is sent out
It penetrates or receiving unit is to the heat-sinking capability of metal shell higher requirement.The circuit requirement of transmitting or receiving unit assembled inside
Shell thermal expansion coefficient is answered matching.In addition, being applied to transmitting or the receiving unit of aerospace field, have to device weight
It is strict with.Conventional metals shell is difficult to fully meet various requirements set forth above.
In the prior art, transmitting or receiving unit generally use aluminum shell, there are thermal expansion coefficient it is excessive (23.6 ×
DEG C), the problems such as being mismatched with normal internal silicon chip circuit (thermal expansion coefficient of silicon chip be 4.1 × 10-6/ DEG C),
With temperature variation due to thermal expansion coefficient difference cause its can not with it is swollen with contracting, internal circuit be easy failure, can not apply
In the occasion of highly reliable demand.The kovar alloy thermal expansion coefficient that conventional metals shell uses is moderate (5.8 × 10-6/ DEG C), valence
Lattice are cheap, but thermal conductivity only has 17W/ (mK), are not able to satisfy the cooling requirements of modern high power integrated circuit, and kovar alloy
Density it is higher (density 8.2g/cm3), be not able to satisfy its requirement to weight of aerospace field.Low-density and high-strength
Ti-6Al-4V titanium alloy material is widely used to aerospace field, but titanium alloy material thermal expansion coefficient as structural member
It is bigger than normal, thermal conductivity is low (thermal conductivity 15.2W/ (mK), 8.5 × 10-6/ DEG C of thermal expansion coefficient), limit it in Electronic Packaging
Application extension.
In recent years, by locally inlaying the side of aluminium silicon carbide heat sink plate in Ti-6Al-4V titanium alloy metal shell body
Formula meets the cooling requirements of integrated circuit to a certain degree, has combined the developing direction of metal shell low-density lightweight.But
It is that in the technical scheme, titanium alloy metal shell body and aluminium silicon carbide heat sink plate need preparatory plated nickel, gold processing, then adopt
The two is connected together with the mode that Sn/Au eutectic is brazed.Sn/Au eutectic is brazed using Au80Sn20 solder, solder valence
Lattice are expensive, cause the manufacturing cost of metal shell high, and 280 DEG C of Au80Sn20 solder melt point, using Sn/Au eutectic soldering
The subsequent use of metal shell is temperature limited, not above 280 DEG C.The thermal expansion coefficient of aluminium silicon carbide heat sink plate is 8.0 × 10-6/
DEG C, it is not enough exactly matched with conventional silicon chip circuit.And with the continuous improvement of internal circuit integrated level, aluminium silicon carbide heat sink plate
The thermal conductivity of 170W/ (mK) can not meet the radiating requirements of internal circuit.
Summary of the invention
The deficiency of scheme in view of the above technology, the object of the present invention is to provide one kind to have lightweight, high heat dissipation and inside electricity
The production method of thermally matched, relatively low cost the metal shell in road, used technical solution are as follows:
A kind of production method for encapsulating the metal shell of electronic building brick, wherein the metal shell includes metal shell
The diamond copper heat sink plate being fitted on the bottom plate of main body and metal shell body, the electronic building brick are mounted on the diamond
In copper heat sink plate, the production of the metal shell includes the following steps,
1) metal shell body and diamond copper heat sink plate are processed, metal shell body bottom is made to form alloy inlaid
The empty slot of hard rock copper heat sink plate makes the interstice coverage 0.05-0.10mm of metal shell body Yu diamond copper heat sink plate, simultaneously
The two sides at metal shell body place chimeric with diamond copper heat sink plate are made to form groove；
2) plating nickel on surface of the metal shell body of machine-shaping in step 1) and diamond copper heat sink plate is handled, and shape
At nickel coating；
It 3) will be after the metal shell body of step 2) processing be chimeric with diamond copper heat sink plate, in the two junction, that is, institute
It states groove and solder is added, and carry out soldering processing in gas shield furnace, the metal shell is obtained after heat preservation.
Further, the metal shell body uses Ti-6Al-4V titanium alloy, density 4.5g/cm3, thermal conductivity
15.2W/ (mK), 8.5 × 10-6/ DEG C of thermal expansion coefficient.
Further, the thermal expansion coefficient of the diamond copper heat sink plate is 4.0 × 10-6/ DEG C, density 4.6g/cm3,
Thermal conductivity is 600W/ (mK), and wherein the content of copper accounts for 40%.
Further, in the step 2) thickness of nickel coating at 5-15 μm.
Further, the gas in the step 3) in gas shield furnace is hydrogen.
Further, solder is using silver-bearing copper eutectic solder (Ag72Cu28), brazing temperature 790- in the step 3)
840 DEG C, soaking time is 2-10 minutes.
In metal shell provided by the invention, used metal shell main body uses Ti-6Al-4V titanium alloy, density
It is low, light-weight；Used diamond copper heat sink plate, thermal expansion coefficient is low, density is low, and thermal conductivity is high, is guaranteeing and electronics group
It ensure that efficient heat-sinking capability while the matched coefficients of thermal expansion of part, avoid metal shell electronic building brick because of working environment
Temperature is excessively high and fails, and meets high performance components to the radiating requirements of metal shell；Metal shell main body and diamond copper
Heat sink plate carries out Nickel Plating Treatment, and only 5-15 μm of the thickness of nickel coating；Add between metal shell body and diamond copper heat sink plate
The interstice coverage of work is 0.05-0.10mm, and soldering processing is carried out to it, and solder used is silver-bearing copper eutectic solder, not only price ratio
It is lower, the cost of manufacture of metal shell can be saved, and brazing temperature, between 790-840 DEG C, soaking time was at 2-10 minutes
Between, the weld strength for forming metal shell main body and the heat sink plate welding seams of diamond copper is high, is capable of providing the carrying of commissure
Ability reduces the spoilage of metal shell, service life so that metal shell be made to have preferable moulding toughness and tensile strength
More long；Since the fusing point of silver-bearing copper eutectic solder is 780 DEG C, using the metal shell of silver-bearing copper eutectic soldering compared to golden tin
Eutectic soldering, shell is subsequent to be significantly improved using temperature；The solder is placed in grooves on two sides, and solder can be more after melting
It flows into gap well, stitches the fibre of fill solder more uniform.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of metal shell of the invention.
In figure: 1, metal shell main body；2, diamond copper heat sink plate；3, groove；4, electronic building brick.
Specific embodiment
The production method of the metal shell for encapsulating electronic building brick is carried out below by specific embodiment and attached drawing
It is described in detail.
Production method provided by the present invention for encapsulating the metal shell of electronic building brick, wherein the metal shell includes
The diamond copper heat sink plate being fitted on the bottom plate of metal shell main body and metal shell body, the electronic building brick are mounted on institute
It states in diamond copper heat sink plate, includes the following steps,
1) metal shell body and diamond copper heat sink plate are processed, metal shell body bottom is made to form alloy inlaid
The empty slot of hard rock copper heat sink plate, and make the interstice coverage 0.05-0.10mm of the empty slot Yu diamond copper heat sink plate；
2) plating nickel on surface of the metal shell body of machine-shaping in step 1) and diamond copper heat sink plate is handled, and shape
At nickel coating；
3) it will be added after the metal shell body of step 2) processing is chimeric with diamond copper heat sink plate in the groove
Solder, and soldering processing is carried out in gas shield furnace, the metal shell is obtained after heat preservation.
The specific process steps are as follows:
1) metal shell body is processed, metal shell body bottom is made to form the sky of chimeric diamond copper heat sink plate first
Slot, and make metal shell body place chimeric with diamond copper heat sink plate two sides formed groove, then to diamond copper heat sink plate after
It is continuous to be processed, make metal shell body it is chimeric with diamond copper heat sink plate afterwards between interstice coverage 0.05-0.10mm；Its
Described in metal shell body use Ti-6Al-4V titanium alloy, density 4.5g/cm3, thermal conductivity 15.2W/ (mK), heat it is swollen
8.5 × 10-6/ DEG C of swollen coefficient, the thermal expansion coefficient of diamond copper heat sink plate used are 4.0 × 10-6/ DEG C, density 4.6g/
cm3, thermal conductivity is 600W/ (mK), and the mass percent of copper is 40%；
2) to the surface of the metal shell body of machine-shaping in step 1) and diamond copper heat sink plate use respectively nickel into
Row plating, and surface both formed nickel coating, the nickel coating of formation with a thickness of 5-15 μm；
3) metal shell body handled through step 2) and diamond copper heat sink plate are entrenched togather, are formed in two sides
Solder is put on groove, the solder uses silver-bearing copper eutectic solder, and wherein mass percent is silver-colored 72%, copper 28%, by it
It being placed in the furnace of gas shield furnace and is handled using soldering, brazing temperature is maintained at 790-840 DEG C, and soaking time is 2-10 minutes,
The metal shell is obtained, and tests pricker using standard GB/T/T 11363-2008 soldered seam Strength Testing Methods
Welding line intensity.
Table 1 is the preferred embodiment of the present invention and corresponding soldered seam intensity
Embodiment 1-4 uses production method provided by the invention, the production method of embodiment 5 and 6 and offer of the invention
Upper brazing temperature or soaking time are different, and as seen from the table, the weld strength of the obtained metal shell of embodiment 1-4 is much larger than
The weld strength of embodiment 5 and 6, that is, it is stronger using the bearing capacity of the commissure of the metal shell of the invention made, have
Better moulding toughness and tensile strength, so that the spoilage of metal shell reduces, service life extends.
In order to keep the objectives, technical solutions, and advantages of the present invention more concise, present invention embodiments above
It is illustrated, but the present invention is by no means limited to these examples.As described below is only the embodiment of part of the present invention, is used only for retouching
The present invention is stated, should not be understood as limiting the scope of the present invention.It should be pointed out that it is all the spirit and principles in the present invention it
Interior done any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention.Therefore, of the invention
The scope of protection shall be subject to the appended claims for patent.
Claims (5)
1. a kind of production method for encapsulating the metal shell of electronic building brick, which is characterized in that the metal shell includes gold
Belong to the diamond copper heat sink plate being fitted on housing main body and the bottom plate of metal shell body, the electronic building brick is mounted on described
In diamond copper heat sink plate, the production of the metal shell includes the following steps,
1) metal shell body and diamond copper heat sink plate are processed, metal shell body bottom is made to form chimeric diamond
The empty slot of copper heat sink plate, makes the interstice coverage 0.05-0.10mm of metal shell body Yu diamond copper heat sink plate, while making gold
The two sides for belonging to outer cover body place chimeric with diamond copper heat sink plate form groove；
2) plating nickel on surface of the metal shell body of machine-shaping in step 1) and diamond copper heat sink plate is handled, and forms plating
Nickel layer；
3) metal shell body that will be handled through step 2) is chimeric with diamond copper heat sink plate, and is added and welds in the groove
Material, carries out soldering processing in gas shield furnace, and the metal shell is obtained after heat preservation；Wherein, the solder is to use
Silver-bearing copper eutectic solder, brazing temperature are 790-840 DEG C, soaking time 2-10min.
2. the production method according to claim 1 for encapsulating the metal shell of electronic building brick, which is characterized in that described
Metal shell body uses Ti-6Al-4V titanium alloy, density 4.5g/cm3, thermal conductivity 15.2W/ (mK), thermal expansion coefficient
8.5×10-6/℃。
3. the production method according to claim 1 for encapsulating the metal shell of electronic building brick, which is characterized in that described
The thermal expansion coefficient of diamond copper heat sink plate is 4.0 × 10-6/ DEG C, density 4.6g/cm3, and thermal conductivity is 600W/ (mK),
Wherein the content of copper accounts for 40%.
4. the production method according to claim 1 for encapsulating the metal shell of electronic building brick, which is characterized in that described
The thickness of nickel coating is at 5-15 μm in step 2).
5. the production method according to claim 1 for encapsulating the metal shell of electronic building brick, which is characterized in that described
Gas in step 3) in gas shield furnace is hydrogen.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109267126B (en) * | 2018-10-11 | 2020-08-07 | 中国电子科技集团公司第四十三研究所 | Titanium alloy packaging shell and manufacturing method thereof |
| CN110708926B (en) * | 2019-09-06 | 2021-05-18 | 华为技术有限公司 | Preparation method of shell, shell and electronic equipment |
| CN111584371B (en) * | 2020-05-25 | 2022-04-01 | 苏州融睿电子科技有限公司 | Manufacturing method of packaging shell and packaging shell |
| CN112164658A (en) * | 2020-09-07 | 2021-01-01 | 中国电子科技集团公司第十四研究所 | Manufacturing method of high-efficiency heat-dissipation high-frequency T/R assembly shell |
| CN112366183A (en) * | 2020-10-30 | 2021-02-12 | 中国电子科技集团公司第五十五研究所 | Microwave power amplification chip package of integrated metal tube shell and preparation method thereof |
| CN113097165B (en) * | 2021-03-31 | 2022-05-06 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor stacked array |
| CN117855157B (en) * | 2024-03-07 | 2024-05-14 | 中国电子科技集团公司第二十九研究所 | Encapsulation structure and method of millimeter wave solid-state power amplifier |
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