CN101502904A - Aluminum silicon carbide composite material for packaging microelectron and method for brazing kovar alloy - Google Patents
Aluminum silicon carbide composite material for packaging microelectron and method for brazing kovar alloy Download PDFInfo
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- CN101502904A CN101502904A CNA2009100791558A CN200910079155A CN101502904A CN 101502904 A CN101502904 A CN 101502904A CN A2009100791558 A CNA2009100791558 A CN A2009100791558A CN 200910079155 A CN200910079155 A CN 200910079155A CN 101502904 A CN101502904 A CN 101502904A
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Abstract
The invention provides a method for soldering aluminum silicon carbide composite and kovar alloy used in microelectronic encapsulation and pertains to the field of metal shell encapsulation. The invention adopts two different soldering methods respectively for SiCp/Al composite with aluminum-coated surface and SiCp/Al composite with SiC particle-containing surface. As for SiCp/Al composite with aluminum-coated surface, Al-Ag-Cu eutectic solder is adopted to carry out direct soldering; as for SiCp/Al composite with SiC particle-containing surface, the surfaces of SiCp/Al composite and kovar alloy are chemically plated with Ni(P) alloy directly and then Al-Ag-Cu eutectic solder is adopted to carry out soldering. The welded joint obtained by adopting the method can meet various performance requirements of the microelectronic encapsulation and the wettability of solders and composites with surface being aluminum alloy or Ni-plated base materials is good. The invention is applicable to the shell encapsulation of hybrid integrated circuit, millimeter wave/micron wave integrated circuit, multi-chip assembly and other microelectronic apparatuses in microelectronic encapsulation.
Description
Technical field
The invention belongs to the metal shell encapsulation field, particularly the method for welding of aluminum silicon carbide composite material and kovar alloy.
Background technology
Metal Packaging is to adopt metal as housing or base, and chip directly or by substrate is installed on shell or the base, and lead-in wire passes a kind of Electronic Packaging form that metal shell or base adopt Technique of glass-to-metal seals mostly.It is widely used in the encapsulation of hybrid circuit, mainly is special-purpose level Hermetic Package military and customization, in a lot of fields, has especially obtained using widely in military affairs and aerospace field.Traditional package casing material kovar alloy (kovar) is low owing to its thermal conductivity, the resistivity height, and density is also bigger, makes its extensive use be subjected to considerable restraint.High-volume fractional SiC
p/ Al composite is specific strength height, specific stiffness height not only, and good heat conductivity, CTE is adjustable, density is lower, and these performances make it become the ideal material that can substitute kovar alloy and satisfy the level Hermetic Package needs.Up to the present, both at home and abroad to SiC
pThe welding research of/Al composite mainly concentrates on SiC
pMiddle temperature welding when/Al composite is used as structural material, welding method is mainly continued to use the welding method of aluminium and aluminium alloy.The welding method of nearly all aluminium and aluminium alloy all successively is used to SiC
pThe welding of/Al composite is as argon arc welding, electron beam welding, Laser Welding, diffusion welding (DW) and soldering etc.But the scolder of these welding construction materials and method for welding almost all can not be used for packaging technology, because in microelectronics Packaging, generally can only adopt soldering processes, and technological parameter and joint performance are all had higher requirement.And concerning the alumina-base material that the SiC particle strengthens, because the existence of wild phase, seriously hindered solder wetting on mother metal and sprawled, bring difficulty for simultaneously the temperature control in the brazing process, the oxide-film on aluminum matrix composite surface has a strong impact on solder too the wetting of mother metal surface and sprawling in addition, becomes a big difficult point of aluminum matrix composite.
Work as SiC
p/ Al composite when the package casing, can't be directly and glass insulator carry out sealing by fusing, can only by can cut down-the glass insulation sub-component is tightly connected.So its technical process is generally as follows: (1) SiC
p/ Al composite with can cut down-the glass insulation sub-component is tightly connected, i.e. SiC
pThe soldering of/Al composite and kovar alloy; (2) chip is connected on the base of package casing by epoxy conducting or scolder; (3) by parallel seam welding or melting welding cover plate and shell are carried out sealing by fusing.
Because SiC
p/ Al composite has good thermal conductivity, so it is usually used in preparing high-power shell, its caloric value is big, and the epoxy conducting thermal conductivity is very low, is 0.5～2.5W/mK, even SiC
pThe thermal conductivity of/Al reaches 200W/mK, and its radiating effect can be not very good.So can only adopt scolder such as Au-Si scolder to connect chip, its welding temperature is about 450 ℃.So in technology before, the middle temperature scolder that can only select a kind of melting temperature to be higher than 450 ℃ connects SiC
p/ Al composite with can cut down-the glass insulation sub-component.This scolder need possess following performances: 1) brazing temperature and has very narrow melting range and has good flowability to guarantee scolder about 500 ℃; 2) solder must have good metallurgical compatibility with the Al alloy; 3) has the electrochemistry compatibility with matrix material.
SiC
p/ Al material shell generally adopts the once clean final shaping unit of powder metallurgy method, and its surface often is covered with the complete Al alloy-layer of one deck, and its thickness is generally at 0.13mm～0.25mm, in this case, and can soldering as treating the Al alloy.But in some cases, must be to SiC
p/ Al material shell carries out machining, can make the SiC particle be exposed to the surface like this, and this just need carry out plating to its surface, carries out soldering then.In the brazing process, select for use the suitable brazing flux can be broken or the oxide-film of the Al alloy surface that gets loose, reduce the interfacial tension between fusing solder and the mother metal simultaneously, make being able to of fusing solder at the mother metal moistened surface.
Institute of present domestic associated metal shell factory never can be SiC
p/ Al composite really is used for the package metals shell, mainly is in default of connecting SiC
pThe technology of/Al composite and kovar alloy.In order to provide enough temperature to select and the process choice space to subsequent technique, guarantee that simultaneously the chip in the encapsulation has good performance of heat dissipation, need on the basis of the selected scolder that is fit to, solve SiC
pThe soldering connectivity problem of/Al composite and kovar alloy.
Summary of the invention
The invention provides a kind of connection SiC
p/ Al composite with can cut down-technology and the technology of glass insulation sub-component, and provide concrete technological parameter, adopt the Al-Ag-Cu eutectic solder to connect SiC
p/ Al composite and kovar alloy to improve the beginning temperature of process for sealing, are selected and the process choice space for the subsequent technique process provides enough temperature, and the chip in can guaranteeing to encapsulate simultaneously has good performance of heat dissipation.
The present invention is to SiC
p/ Al composite has the surface of alclad and adopts two kinds of different method for welding with the surface of containing the SiC particle, and concrete technology is:
(1) has the SiC of alclad for the surface
p/ Al composite adopts the Al-Ag-Cu eutectic solder, and it is directly carried out soldering in protective atmosphere, and the weldering temperature range is 540～590 ℃, and the holding time is 2～6 minutes.
(2) contain the SiC of SiC particle for the surface
p/ Al composite is at first to SiC
p/ Al composite and kovar alloy surface direct chemical plating Ni (P) alloy, wherein the P quality percentage composition of Ni (P) coating is 3%～13%, and surplus is Ni, and Ni (P) thickness of coating is 1.0～7.0 μ m; SiC after adopting the Al-Ag-Cu eutectic solder to plating Ni
p/ Al composite and kovar alloy carry out soldering in protective atmosphere, the weldering temperature range is 540～590 ℃, and the holding time is 2～6 minutes.
The used brazing flux of described soldering is AlF
3-KF is the eutectic brazing flux.
Described protective atmosphere is a high-purity N
2Gas.
Two kinds of welding SiC
pThe method of/Al composite and kovar alloy is applicable to the package casing of microelectronic components such as hydrid integrated circuit in the microelectronics Packaging, millimeter wave/micron wave integrated circuit, multi-chip module.
Compared with prior art, characteristics of the present invention are that the Al-Ag-Cu eutectic solder of selecting for use has a ternary eutectic point, consist of w (Al) 40.0, w (Cu) 19.3, and w (Ag) 40.7, eutectic temperature is 500 ℃.This scolder color and luster is more consistent with mother metal, and the solder flowability is splendid, well satisfy with the good metallurgical compatibility of Al alloy and with the good electrical chemical compatibility of matrix material.
In this method brazing process, the AlF of employing
3-KF is that the eutectic brazing flux can be broken or the oxide-film of the Al alloy surface that gets loose, and reduces the interfacial tension between fusing solder and the mother metal simultaneously, makes being able at the mother metal moistened surface of fusing solder, and little to the corrosivity of matrix, the brazing flux residue of postwelding is removed easily simultaneously.
The welding point that adopts this method to obtain can satisfy the various performance requirements of microelectronics Packaging, and scolder and surface are that the composite or the matrix material wettability behind the plating Ni of aluminium alloy is good.Metal shell after the sealing-in has good air-tightness, has guaranteed that simultaneously the chip in the encapsulation has good performance of heat dissipation.Metal shell after two kinds of sealing-ins all has following performance:
(1) shell air-tightness :≤1 * 10
-5Pacm
3/ S;
(2) salt fog: surpass 48h;
(3) temperature cycles :-65 ℃～+ 175 ℃, 100 times;
(4) thermal shock :-65 ℃～+ 150 ℃, 15 times;
(5) shear strength: 65MPa.
Description of drawings
Fig. 1 surface has the SiC of Al alloy clad
pThe microstructure of the Al-Ag-Cu soldered fitting of/Al composite;
Fig. 2 surface has the SiC of SiC particle
p/ Al composite soldered fitting schematic diagram;
Fig. 3 SiC
pSurface topography behind/Al composite Electroless Plating Ni (P) coating;
Fig. 4 plates the SiC behind the Ni
pThe microstructure of the Al-Ag-Cu soldered fitting of/Al composite and kovar alloy.
The specific embodiment
Embodiment 1
The SiC that has alclad for the surface
p/ Al composite adopts the Al-Ag-Cu eutectic solder, AlF
3-KF is the eutectic brazing flux, and brazing temperature is 580 ℃, high-purity N
2The following holding time of gas shiled be 6 minutes soldered fitting by shown in Figure 1, by the SEM photo as can be known, welding point is in conjunction with good, scolder and matrix surface aluminium alloy present the excessive mode of nature, almost do not have obvious welding interface.Adopt the SiC of above soldering processes
p/ Al material shell satisfies test requirements documents such as air-tightness, salt fog, temperature cycles and thermal shock.Shear strength is more than the 65MPa.
Embodiment 2
The SiC that contains the SiC particle for the surface
p/ Al composite, by shown in Figure 2, at first to composite and kovar alloy surface direct chemical plating Ni (P) alloy, wherein the P quality percentage composition of Ni (P) coating is 4%, and surplus is Ni, and Ni (P) thickness of coating is 2.0 μ m.At SiC
pThe concrete technological process of/Al composite material surface Electroless Plating Ni (P) can be as shown in the table:
Machine glazed finish → electrochemical deoiling → deionization washing → acid etch → deionization washing → sensitization → deionization washing → activation → deionization washing → Electroless Plating Ni (P).Wherein each the step solution formula and process conditions as table 1 to shown in the table 5.
Table 1 electrochemical deoiling prescription (room temperature, 30s)
Table 2 acid etch prescription (room temperature, 40s)
Table 3 sensitizing solution prescription (room temperature, 120s)
Table 4 activating solution prescription (room temperature, 120s)
Table 5 Electroless Plating Ni (4wt.%P) electroplate liquid formulation and technology
Utilize Al-Ag-Cu scolder and AlF
3-KF is the SiC that the soldering of eutectic brazing flux has Ni (P) coating
p/ Al composite and kovar alloy, high-purity N
2Gas shiled, welding temperature are 580 ℃, and be 6 minutes weld interval.SiC after the Electroless Plating Ni as shown in Figure 3
p/ Al composite material surface quality is good.The microstructure of welding point as shown in Figure 4, as can be seen, material connects good.Adopt the SiC of above welding procedure
p/ Al material shell satisfies test requirements documents such as air-tightness, salt fog, temperature cycles and thermal shock.Shear strength is more than the 65MPa.
Embodiment 3
The SiC that contains the SiC particle for the surface
p/ Al composite, at first to composite and kovar alloy surface direct chemical plating Ni (P) alloy, wherein the P quality percentage composition of Ni (P) coating is 12%, and surplus is Ni, and Ni (P) thickness of coating is 6.0 μ m; Adopt Al-Ag-Cu eutectic solder and AlF
3-KF is that the eutectic brazing flux is 590 ℃ of high-purity N
2Under the gas shiled, with the composite after the nickel plating and kovar alloy soldering together, the holding time is 3 minutes.The concrete technology of Electroless Plating Ni (P) is as follows:
Machine glazed finish → electrochemical deoiling → deionization washing → acid etch → deionization washing → sensitization → deionization washing → activation → deionization washing → Electroless Plating Ni (P).Wherein all technologies before the activation are identical with embodiment 2, and the electroplate liquid formulation and the technological parameter of Electroless Plating Ni (P) are as shown in table 6.
Table 6 Electroless Plating Ni (12wt.%P) electroplate liquid formulation and technology
Adopt the SiC of above welding procedure
p/ Al material shell satisfies test requirements documents such as air-tightness, salt fog, temperature cycles and thermal shock.Shear strength is more than the 65MPa.
Claims (4)
1, the method for welding of a kind of aluminum silicon carbide composite material for packaging microelectron and kovar alloy is characterized in that, to SiC
p/ Al composite has the surface of alclad and adopts two kinds of different method for welding with the surface of containing the SiC particle, and concrete technology is:
(1) has the SiC of alclad for the surface
p/ Al composite adopts the Al-Ag-Cu eutectic solder, and it is directly carried out soldering in protective atmosphere, and the weldering temperature range is 540～590 ℃, and the holding time is 2～6 minutes;
(2) contain the SiC of SiC particle for the surface
p/ Al composite is at first to SiC
p/ Al composite and kovar alloy surface direct chemical plating Ni (P) alloy, wherein the P quality percentage composition of Ni (P) coating is 3%～13%, and surplus is Ni, and Ni (P) thickness of coating is 1.0～7.0 μ m; SiC after adopting the Al-Ag-Cu eutectic solder to plating Ni
p/ Al composite and kovar alloy carry out soldering in protective atmosphere, the weldering temperature range is 540～590 ℃, and the holding time is 2～6 minutes.
2, method for welding as claimed in claim 1 is characterized in that, the used brazing flux of described soldering is AlF
3-KF is the eutectic brazing flux.
3, method for welding as claimed in claim 1 is characterized in that, described protective atmosphere is a high-purity N
2Gas.
4, the purposes of the described method for welding of claim 1 is applicable to the package casing of microelectronic components such as hydrid integrated circuit in the microelectronics Packaging, millimeter wave/micron wave integrated circuit, multi-chip module.
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|---|---|---|---|
| CNA2009100791558A CN101502904A (en) | 2009-03-03 | 2009-03-03 | Aluminum silicon carbide composite material for packaging microelectron and method for brazing kovar alloy |
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|---|---|---|---|
| CNA2009100791558A CN101502904A (en) | 2009-03-03 | 2009-03-03 | Aluminum silicon carbide composite material for packaging microelectron and method for brazing kovar alloy |
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| CN101979204A (en) * | 2010-11-01 | 2011-02-23 | 哈尔滨工业大学 | Indirect-heating braze-welding method for packaging shell with thermal sensitive element |
| CN102009240A (en) * | 2010-10-20 | 2011-04-13 | 北京科技大学 | Method for connecting AlN (aluminum nitride) ceramics and SiC/Al composite material respectively plated with thin-film metal layer on surface |
| CN102489808A (en) * | 2011-12-02 | 2012-06-13 | 郑克力 | Copper and aluminum Composite welding method |
| CN102658411A (en) * | 2012-05-24 | 2012-09-12 | 哈尔滨工业大学 | Ultrasonic brazing method for high-volume-fraction silicon carbide particle enhanced aluminum-base composite and low-expansion alloy |
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| CN102802858B (en) * | 2010-03-18 | 2015-11-25 | 西门子公司 | The method of brazing metal matrix surface |
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| CN110026705A (en) * | 2019-03-08 | 2019-07-19 | 南昌大学 | A kind of coating and its preparation process of enhancing Sn base solder/Kovar alloy interconnection welding spot reliability |
| CN110280927A (en) * | 2019-07-29 | 2019-09-27 | 河南理工大学 | A kind of preparation and application of silumin and kovar alloy soldering solder |
| WO2022096250A1 (en) * | 2020-11-04 | 2022-05-12 | Robert Bosch Gmbh | Method for producing a heatsink by brazing, and assembly comprising a heatsink |
| CN113540001A (en) * | 2021-06-24 | 2021-10-22 | 北京有色金属与稀土应用研究所 | Kovar/silver alloy composite material for microelectronic packaging and preparation method thereof |
| CN113540001B (en) * | 2021-06-24 | 2023-10-27 | 北京有色金属与稀土应用研究所 | Kovar/silver alloy composite material for microelectronic packaging and preparation method thereof |
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