CN204144238U - The package assembling of high power semiconductor chip - Google Patents
The package assembling of high power semiconductor chip Download PDFInfo
- Publication number
- CN204144238U CN204144238U CN201420626280.2U CN201420626280U CN204144238U CN 204144238 U CN204144238 U CN 204144238U CN 201420626280 U CN201420626280 U CN 201420626280U CN 204144238 U CN204144238 U CN 204144238U
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- CN
- China
- Prior art keywords
- sial
- box body
- welded
- heat sink
- semiconductor chip
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of package assembling of high power semiconductor chip.Package assembling comprises sial box body, gold soldering tablet, diamond copper is heat sink piece, tin-lead solder sheet, high power semiconductor chip, cover plate, low-frequency connector and radio frequency connector, chamber groove is had bottom sial box body, diamond copper is heat sink piece is arranged in chamber groove, and welded with sial box body by tin-lead solder sheet, high power semiconductor chip is positioned at above the groove of chamber, and be welded on heat sink piece of diamond copper by golden soldering tablet, cover plate covers sial box body, and welded with sial box body by Laser seal welding, low-frequency connector and radio frequency connector are welded on the relative both sides of sial box body.After package assembling of the present utility model can solve high power semiconductor chip encapsulation, the problem that heat radiation, thermal expansion, air-tightness can not be taken into account.
Description
Technical field
The utility model relates to a kind of electronic devices and components encapsulation field, particularly a kind of package assembling of high power semiconductor chip.
Background technology
High power semiconductor chip is high to the cooling requirements of encapsulation when applying, and requires that the thermal coefficient of expansion of encapsulating material is lower simultaneously.And the metals such as traditional AlSiC (aluminium silicon carbide), copper, molybdenum copper, tungsten copper all cannot meet heat radiation and seal request simultaneously, the heat radiation after high power semiconductor chip encapsulation, thermal expansion, air-tightness can not be taken into account.
Utility model content
Goal of the invention of the present utility model is: for above-mentioned Problems existing, provides a kind of package assembling of high power semiconductor chip, after high power semiconductor chip encapsulation can be solved, and the problem that heat radiation, thermal expansion, air-tightness can not be taken into account.
The technical solution adopted in the utility model is such: the package assembling providing a kind of high power semiconductor chip, described package assembling comprises sial box body, gold soldering tablet, diamond copper is heat sink piece, tin-lead solder sheet, high power semiconductor chip, cover plate, low-frequency connector and radio frequency connector, chamber groove is had bottom described sial box body, heat sink piece of described diamond copper is arranged in described chamber groove, and welded with described sial box body by described tin-lead solder sheet, described high power semiconductor chip is positioned at above the groove of described chamber, and be welded on heat sink piece of described diamond copper by described golden soldering tablet, described cover plate covers described sial box body, and welded with described sial box body by Laser seal welding, described low-frequency connector and described radio frequency connector are welded on the relative both sides of described sial box body.
Preferably, described chamber groove runs through bottom described sial box body, heat sink piece of described diamond copper comprises head and end, the section size of described head is less than the section size of described end, described chamber groove is T-slot, the head of heat sink piece of described diamond copper is placed in described chamber groove, and the end face that the end of heat sink piece of described diamond copper connects described head is welded with described sial box body by described tin-lead solder sheet.
Preferably, slot, described chamber is bottom sial box body but do not run through bottom described sial box body, described tin-lead solder sheet is arranged on bottom described sial box body, and heat sink piece of described diamond copper is arranged on described tin-lead solder sheet, and is welded in the groove of described chamber by described tin-lead solder sheet.
In sum, owing to have employed technique scheme, the beneficial effects of the utility model are: by adopting heat sink piece of diamond copper as heat sink heat radiation, thus after high power semiconductor chip encapsulation can be solved, the problem that heat radiation, thermal expansion, air-tightness can not be taken into account, can increase substantially radiating efficiency and the reliability of high power semiconductor chip.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of a kind of embodiment of package assembling of the utility model high power semiconductor chip.
Fig. 2 is the cross-sectional view of the another kind of embodiment of package assembling of the utility model high power semiconductor chip.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail.
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
The package assembling that the utility model provides comprises sial box body 1, gold soldering tablet 2, diamond copper is heat sink pieces 3, tin-lead solder sheet 4, high power semiconductor chip 5, cover plate 6, low-frequency connector 7 and radio frequency connector 8, chamber groove 11 is had bottom sial box body 1, diamond copper is heat sink pieces 3 is arranged in chamber groove 11, and welded with sial box body 1 by tin-lead solder sheet 4, high power semiconductor chip 5 is positioned at above chamber groove 11, and be welded on diamond copper heat sink piece 3 by golden soldering tablet 2, cover plate 6 covers sial box body 1, and welded with sial box body 1 by Laser seal welding, low-frequency connector 7 and radio frequency connector 8 are welded on the relative both sides of sial box body 1.
Package assembling of the present utility model, when embody rule, has embedded and externally embedded type two kinds of packaged types.
See Fig. 1, it is the cross-sectional view of a kind of embodiment of package assembling of the utility model high power semiconductor chip.The package assembling of the present embodiment adopts the packaged type of externally embedded type.Wherein, chamber groove 11 runs through bottom sial box body 1, diamond copper is heat sink pieces 3 comprises head and end, the section size L of head is less than the section size M of end, chamber groove 11 is T-slot, diamond copper is heat sink pieces 3 head be placed in chamber groove 11, diamond copper is heat sink pieces 3 the end face in end-connector portion welded with sial box body 1 by tin-lead solder sheet 4.
If adopt the packaged type of externally embedded type, then encapsulate flow process as follows:
To sial box body 1, golden soldering tablet 2, diamond copper is heat sink pieces 3 and tin-lead solder sheet 4, carry out Ultrasonic Cleaning;
Golden tin welding low-frequency connector 7 and radio frequency connector 8 is adopted in atmosphere furnace;
Helium mass spectrometer is adopted to hunt leak to package assembling;
High power semiconductor chip 5 is welded on diamond copper heat sink piece 3 by golden soldering tablet 2, after having welded, detects welding cavity by X-RAY;
By the end face in the end-connector portion of heat sink for diamond copper piece 3 by tin-lead solder sheet 4 and sial box body 1, after having welded, detect welding cavity by X-RAY;
Helium mass spectrometer is again adopted to hunt leak to package assembling;
Sial box body 1 is installed other components and parts;
The electric property of debugging package assembling;
Toast in vacuum drying oven, and by Laser seal welding, cover plate 6 is welded with sial box body 1;
Pressure helium method is adopted to detect the air-tightness of package assembling.
See Fig. 2, it is the cross-sectional view of the another kind of embodiment of package assembling of the utility model high power semiconductor chip.The package assembling of the present embodiment adopts embedded packaged type.Wherein, chamber groove 11 to be positioned at bottom sial box body 1 but not to run through bottom sial box body 1, and tin-lead solder sheet 4 is arranged on bottom sial box body 1, and diamond copper is heat sink pieces 3 to be arranged on tin-lead solder sheet 4, and is welded in chamber groove 11 by tin-lead solder sheet 4.
If adopt the packaged type of externally embedded type, then encapsulate flow process as follows:
To sial box body 1, golden soldering tablet 2, diamond copper is heat sink pieces 3 and tin-lead solder sheet 4, carry out Ultrasonic Cleaning;
Golden tin welding low-frequency connector 7 and radio frequency connector 8 is adopted in atmosphere furnace;
Helium mass spectrometer is adopted to hunt leak to package assembling;
High power semiconductor chip 5 is welded on diamond copper heat sink piece 3 by golden soldering tablet 2, after having welded, detects welding cavity by X-RAY;
By the end face in the end-connector portion of heat sink for diamond copper piece 3 by tin-lead solder sheet 4 and sial box body 1, after having welded, detect welding cavity by X-RAY;
Sial box body 1 is installed other components and parts;
The electric property of debugging package assembling;
Toast in vacuum drying oven, and by Laser seal welding, cover plate 6 is welded with sial box body 1;
Pressure helium method is adopted to detect the air-tightness of package assembling.
The package assembling of the utility model embodiment adopts heat sink piece of diamond copper as heat dispersion heat sink, diamond copper is as a kind of composite material, there is the advantage of high heat conduction and low thermal coefficient of expansion, the heat radiation of high power semiconductor chip and the problem of thermal expansion compatibility can be ensured, and cover plate is welded by the mode of Laser seal welding, the air-tightness of package assembling can be ensured, thus after high power semiconductor chip encapsulation can be solved, the problem that heat radiation, thermal expansion, air-tightness can not be taken into account, can increase substantially radiating efficiency and the reliability of high power semiconductor chip.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (3)
1. the package assembling of a high power semiconductor chip, it is characterized in that, described package assembling comprises sial box body (1), gold soldering tablet (2), diamond copper is heat sink piece (3), tin-lead solder sheet (4), high power semiconductor chip (5), cover plate (6), low-frequency connector (7) and radio frequency connector (8), described sial box body (1) bottom has chamber groove (11), heat sink piece of described diamond copper (3) is arranged in described chamber groove (11), and welded with described sial box body (1) by described tin-lead solder sheet (4), described high power semiconductor chip (5) is positioned at top, described chamber groove (11), and be welded on heat sink piece of described diamond copper (3) by described golden soldering tablet (2), described cover plate (6) covers described sial box body (1), and welded with described sial box body (1) by Laser seal welding, described low-frequency connector (7) and described radio frequency connector (8) are welded on the relative both sides of described sial box body (1).
2. package assembling according to claim 1, it is characterized in that, described sial box body (1) bottom is run through in described chamber groove (11), described diamond copper heat sink piece (3) comprises head and end, the section size of described head is less than the section size of described end, described chamber groove (11) is T-slot, the head of described diamond copper heat sink piece (3) is placed in described chamber groove (11), the end face that the end of described diamond copper heat sink piece (3) connects described head is welded with described sial box body (1) by described tin-lead solder sheet (4).
3. package assembling according to claim 1, it is characterized in that, described chamber groove (11) is positioned at sial box body (1) bottom but does not run through described sial box body (1) bottom, described tin-lead solder sheet (4) is arranged on described sial box body (1) bottom, heat sink piece of described diamond copper (3) is arranged on described tin-lead solder sheet (4), and is welded in described chamber groove (11) by described tin-lead solder sheet (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420626280.2U CN204144238U (en) | 2014-10-27 | 2014-10-27 | The package assembling of high power semiconductor chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420626280.2U CN204144238U (en) | 2014-10-27 | 2014-10-27 | The package assembling of high power semiconductor chip |
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| CN204144238U true CN204144238U (en) | 2015-02-04 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602401A (en) * | 2017-02-28 | 2017-04-26 | 广东工业大学 | Heat sink used for high-power semiconductor laser and preparation method |
| CN106879213A (en) * | 2017-03-10 | 2017-06-20 | 四川莱源科技有限公司 | A kind of cavity equipment for being easy to radiate |
| CN107546131A (en) * | 2017-08-09 | 2018-01-05 | 合肥圣达电子科技实业有限公司 | A kind of preparation method for being used to encapsulate the metal shell of electronic building brick |
| CN107634044A (en) * | 2017-09-15 | 2018-01-26 | 成都睿腾万通科技有限公司 | A kind of high-power SIP gold tin welding encapsulating structure and method for packing |
| CN112234037A (en) * | 2020-09-17 | 2021-01-15 | 中国电子科技集团公司第五十五研究所 | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof |
| CN112684552A (en) * | 2021-02-25 | 2021-04-20 | 遵义市飞宇电子有限公司 | Photoelectric signal adapter connector |
| CN112938889A (en) * | 2021-02-01 | 2021-06-11 | 南京理工大学 | Graphical gold-tin soldering-based low-stress packaging structure and method for MEMS (micro-electromechanical systems) inertial sensor |
| CN114023709A (en) * | 2022-01-05 | 2022-02-08 | 中国电子科技集团公司第二十九研究所 | Combined type substrate structure suitable for heat dissipation of high-power bare chip |
| CN114243358A (en) * | 2021-12-17 | 2022-03-25 | 中国电子科技集团公司第十三研究所 | Airtight metal packaging structure and manufacturing method |
| CN114242620A (en) * | 2021-12-14 | 2022-03-25 | 石家庄银河微波技术有限公司 | Power tube sintering method for high-power device |
-
2014
- 2014-10-27 CN CN201420626280.2U patent/CN204144238U/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602401A (en) * | 2017-02-28 | 2017-04-26 | 广东工业大学 | Heat sink used for high-power semiconductor laser and preparation method |
| CN106879213A (en) * | 2017-03-10 | 2017-06-20 | 四川莱源科技有限公司 | A kind of cavity equipment for being easy to radiate |
| CN107546131A (en) * | 2017-08-09 | 2018-01-05 | 合肥圣达电子科技实业有限公司 | A kind of preparation method for being used to encapsulate the metal shell of electronic building brick |
| CN107546131B (en) * | 2017-08-09 | 2019-11-15 | 合肥圣达电子科技实业有限公司 | A kind of production method for encapsulating the metal shell of electronic building brick |
| CN107634044A (en) * | 2017-09-15 | 2018-01-26 | 成都睿腾万通科技有限公司 | A kind of high-power SIP gold tin welding encapsulating structure and method for packing |
| CN112234037A (en) * | 2020-09-17 | 2021-01-15 | 中国电子科技集团公司第五十五研究所 | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof |
| CN112938889A (en) * | 2021-02-01 | 2021-06-11 | 南京理工大学 | Graphical gold-tin soldering-based low-stress packaging structure and method for MEMS (micro-electromechanical systems) inertial sensor |
| CN112684552A (en) * | 2021-02-25 | 2021-04-20 | 遵义市飞宇电子有限公司 | Photoelectric signal adapter connector |
| CN114242620A (en) * | 2021-12-14 | 2022-03-25 | 石家庄银河微波技术有限公司 | Power tube sintering method for high-power device |
| CN114243358A (en) * | 2021-12-17 | 2022-03-25 | 中国电子科技集团公司第十三研究所 | Airtight metal packaging structure and manufacturing method |
| CN114243358B (en) * | 2021-12-17 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | Air-tightness metal packaging structure and manufacturing method |
| CN114023709A (en) * | 2022-01-05 | 2022-02-08 | 中国电子科技集团公司第二十九研究所 | Combined type substrate structure suitable for heat dissipation of high-power bare chip |
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