CN107275319A - A kind of LED chip flat-plate heat pipe integrated encapsulation structure and preparation method thereof - Google Patents
A kind of LED chip flat-plate heat pipe integrated encapsulation structure and preparation method thereof Download PDFInfo
- Publication number
- CN107275319A CN107275319A CN201710646994.8A CN201710646994A CN107275319A CN 107275319 A CN107275319 A CN 107275319A CN 201710646994 A CN201710646994 A CN 201710646994A CN 107275319 A CN107275319 A CN 107275319A
- Authority
- CN
- China
- Prior art keywords
- heat pipe
- flat
- plate heat
- led chip
- evaporating surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims abstract description 61
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 15
- 239000000741 silica gel Substances 0.000 claims description 12
- 229910002027 silica gel Inorganic materials 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004519 grease Substances 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 3
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000005202 decontamination Methods 0.000 description 2
- 230000003588 decontaminative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000855 fermentation Methods 0.000 description 2
- 230000004151 fermentation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of LED chip flat-plate heat pipe integrated encapsulation structure and preparation method thereof, it includes radiating fin, flat-plate heat pipe, circuit layer, some LED chips and chip encapsulation material.The flat-plate heat pipe evaporating surface is ALN insulated ceramic plates, and cryosurface is red copper shell plates, and evaporating surface is provided with the porous capillary liquid sucting core structure of radial inner groovy, and cryosurface is provided with thin layer porous wick structure structure, and evaporating surface is directly fitted with cryosurface.The LED chip is set directly in flat-plate heat pipe evaporating surface ALN insulated ceramic plates.Metal plate is substituted as the evaporating surface of flat-plate heat pipe using ALN insulated ceramic plates, insulating barrier need not be set, the thermal stress of package substrate and LED chip is greatly reduced, system thermal resistance is significantly reduced, improves radiating efficiency, LED service life and functional reliability is extended.
Description
Technical field
The present invention relates to a kind of high-power multi-core piece LED encapsulating structure, more particularly, to a kind of LED chip flat-plate heat pipe
Integrated encapsulation structure and preparation method thereof.
Background technology
As LED semiconductor lightings develop to highly integrated, high power direction, the chip encapsulated in LED-baseplate is increasingly
Chip heat flow density more and more highers that are many, thus triggering.At present, high-power LED integrated packaging structure, especially multi-chip are integrated
Encapsulating structure, the most frequently used package substrate is copper base, aluminium base, and its thermal conductivity is up to 398W/mK, 180W/mK, got over respectively
To be more difficult to the demand for meeting great power LED cooling.
The radiating problem occurred for high-power multi-core piece LED encapsulation structure, has researcher and proposes to use flat board at present
The encapsulation of heat pipe and LED chip is radiated, such as patent CN201220000690.7, CN201020539446.9,
CN200920313589.5, CN200920302793.7 etc..But flat-plate heat pipe evaporating surface disclosed above and cryosurface be by
Two pieces of metal cover boards welding up and down is put together, LED chip material thermal expansion coefficient mismatches with metal material thermal coefficient of expansion,
It is easily caused serious thermal stress Problem of Failure；Make simultaneously and be required to make insulating barrier in metal material surface before circuit layer, by
It is poor in the thermal conductance of insulating barrier, thermal resistance is significantly increased, so as to bring problem for the radiating of LED chip.
AlN ceramic is physico with its high heat conductance, insulating properties and with LED chip material thermal expansion coefficient good match
Learn performance, it is resolved that it can be used for insulating substrate, enclosed chip, the heat dispersion substrate of large power semiconductor device.Using AlN ceramic
Fitted as the evaporating surface and directly being encapsulated with LED chip of flat-plate heat pipe, had not yet to see relevant report.
The content of the invention
Technical problem underlying to be solved by this invention be to provide a kind of LED chip flat-plate heat pipe integrated encapsulation structure and its
Preparation method, heat conduction is fast, the thermal stress of package substrate and LED chip is smaller.
In order to solve above-mentioned technical problem, the invention provides a kind of LED chip flat-plate heat pipe integrated encapsulation structure, bag
Include transparent silica gel, multiple LED chips, circuit layer, flat-plate heat pipe, radiating fin；
The LED chip is distributed in the upper surface of the circuit layer in the way of matrix arrangement, and the circuit layer is directly set
Put on the evaporating surface of flat-plate heat pipe, cryosurface and the radiating fin of the flat-plate heat pipe formed it is detachable be fastenedly connected, institute
State transparent silica gel to be directly arranged on some LED chips and circuit layer, LED chip is packaged in transparent silica gel；
The evaporating surface of the flat-plate heat pipe is a plane ALN insulated ceramic plates, and the cryosurface direction of the flat-plate heat pipe is steamed
The side of fermentation, along the recessed formation cavity in direction away from evaporating surface；The side of the evaporating surface towards cavity has porous
Capillary wick structure, the porous capillary liquid sucting core structure includes a Circular Plate, and the surface of the Circular Plate axially has
Loose structure；The inner groovy being radially distributed that the annulus plate surface is provided with, the two ends of the inner groovy are respectively communicated to
The inner periphery and the outer periphery of Circular Plate；The cryosurface is provided with thin layer porous wick structure structure towards the side of evaporating surface；
The porous capillary liquid sucting core structure and thin layer porous wick structure structure are placed in the cavity directly against merging, institute
State the upper and lower surface that evaporating surface and thin layer porous wick structure structure are located at the Circular Plate respectively so that the Circular Plate center of circle
Cavity one seal cavity of formation at place；The outer peripheral sidewall of the cryosurface, which is reserved with, to be vacuumized and liquid feeding mouth.
In a preferred embodiment：The multiple LED chip be packaging pin in the same direction and LED chip upward；LED core
Welded with evaporating surface by golden tin silver paste solder the bottom surface of piece；One side of the LED chip away from evaporating surface is provided with the encapsulation
Pin, the both positive and negative polarity after the plain conductor connection in series-parallel that packaging pin passes through high conductivity directly with circuit layer is connected respectively.
Present invention also offers the preparation method of LED chip flat-plate heat pipe integrated encapsulation structure as described above, including such as
Lower step：
1) red copper sheet material is processed by machining process and produces red copper shell plates as the cryosurface of flat-plate heat pipe, adopted
ALN insulating ceramicses sheet material is produced with laser processing as the evaporating surface of flat-plate heat pipe, decontamination, drying is respectively washed；
2) using copper powder particle as raw material, using solid-phase sintering method, porous capillary liquid-sucking core knot is prepared on evaporating surface
Structure, prepares thin layer porous wick structure structure on cryosurface；The evaporating surface outward flange and adopted with the cryosurface outward flange
With silver-bearing copper titanium vacuum brazing airtight connection；So that porous capillary liquid sucting core structure is directly fitted with thin layer porous wick structure structure,
A closed cavity is formed in porous capillary liquid sucting core structure, working medium is vacuumized and irrigated to inside cavity, flat board is completed
The preparation of heat pipe；
3) mask prepares circuitous pattern and LED chip weld zone in the evaporating surface ALN insulated ceramic plates of flat-plate heat pipe；
4) the conductive metal deposition atom formation circuit layer on the evaporating surface of flat-plate heat pipe；
5) by packaging pin in the same direction and after the plain conductor connection in series-parallel of some LED chip high conductivities upward with circuit
The both positive and negative polarity of layer is connected respectively, and its chip bottom is welded direct to the evaporating surface table of the flat-plate heat pipe by the way of eutectic weldering
On face；
6) transparent silica gel is encapsulated in LED chip and circuit layer；
7) after the cryosurface surface even application heat-conducting silicone grease of flat-plate heat pipe, by flat-plate heat pipe cryosurface and radiating fin
It is attached using removable be fastenedly connected, completes the preparation of LED chip flat-plate heat pipe integrated encapsulation structure.
It is of the invention that there is advantages below compared with the structure of other packaging LED chips direct on flat-plate heat pipe：
1) traditional metal materials are substituted using AlN insulated ceramic plates and is used as the evaporating surface of flat-plate heat pipe, AlN insulated ceramic plates
Not only there is high-insulativity, high thermal conductivity, its thermal coefficient of expansion is good with LED chip match materials, so as to greatly reduce envelope
Fill the thermal stress of substrate and LED chip；
2) relative to conventional LED package structure, the present invention directly sets LED chip structure on flat-plate heat pipe evaporating surface,
It is provided with a layer insulating less between circuit layer and flat-plate heat pipe, the quick of LED heat is realized using the good thermal conductivity of ALN
Scatter and disappear, significantly reduce system thermal resistance, greatly improve radiating efficiency, and then reduce the junction temperature of LED chip, extend LED
Service life and reliability.
Brief description of the drawings
Fig. 1 is LED chip flat-plate heat pipe integrated encapsulation structure sectional view of the present invention；
Fig. 2 is LED chip integration packaging of the present invention to flat-plate heat pipe evaporating surface sectional view；
Fig. 3 is the exploded perspective view of flat-plate heat pipe of the present invention；
Fig. 4 is flat-plate heat pipe evaporating surface circuitous pattern of the present invention and chip welding region schematic diagram；
Fig. 5 is flat-plate heat pipe evaporating surface circuit of the present invention and golden tin silver paste welding region schematic diagram；
Fig. 6 is LED chip integration packaging of the present invention to flat-plate heat pipe evaporating surface top view；
Fig. 7 is flat-plate heat pipe evaporating surface inner groovy liquid sucting core structure schematic diagram of the present invention；
The mould schematic diagram that Fig. 8 uses for present invention manufacture evaporating surface inner groovy liquid sucting core structure；
The mould schematic diagram that Fig. 9 uses for present invention manufacture cryosurface liquid sucting core structure.
Embodiment
In order at large illustrate contexture of the invention, technology contents, purpose and operating method be realized, below in conjunction with reality
Mode is applied, and coordinates accompanying drawing to illustrate.
As shown in figure 1, a kind of LED chip flat-plate heat pipe integrated encapsulation structure, including transparent silica gel 1, multiple LED chips 2,
Circuit layer 3, flat-plate heat pipe 4, radiating fin 5；
The LED chip 2 is distributed in the upper surface of the circuit layer 3 in the way of matrix arrangement, and the circuit layer 3 is direct
It is arranged on the evaporating surface 41 of flat-plate heat pipe 4, cryosurface 42 and the radiating fin 5 of the flat-plate heat pipe 4 form detachable tight
It is solidly connected, the transparent silica gel 1 is directly arranged on some LED chips 2 and circuit layer 3, LED chip 2 is packaged in transparent
In silica gel 1；
With further reference to Fig. 3, Fig. 7, the evaporating surface 41 of the flat-plate heat pipe 4 is a plane ALN insulated ceramic plates, described flat
The cryosurface 42 of plate heat pipe 4 is towards the side of evaporating surface 41, along the recessed formation cavity in direction away from evaporating surface 41；It is described to steam
Fermentation 41 has porous capillary liquid sucting core structure 411 towards the side of cavity, and the porous capillary liquid sucting core structure 411 includes a circle
Ring flat-plate, the surface of the Circular Plate axially has loose structure；What what the annulus plate surface was provided be radially distributed
Inner groovy, the two ends of the inner groovy are respectively communicated to the inner periphery and the outer periphery of Circular Plate；The cryosurface 42 is towards evaporating surface 41
Side be provided with thin layer porous wick structure structure 421；
The porous capillary liquid sucting core structure 411 and thin layer porous wick structure structure 421 directly against merge be placed in it is described recessed
Intracavitary, evaporating surface 41 and thin layer the porous wick structure structure 421 is located at the upper and lower surface of the Circular Plate respectively, makes
Obtain cavity one seal cavity of formation of Circular Plate circle centre position；The outer peripheral sidewall of the cryosurface 42, which is reserved with, to be vacuumized and liquid feeding mouth
43。
Because the material of evaporating surface 41 of flat-plate heat pipe 4 is ALN insulating ceramicses so that LED chip 2 and the evaporation of flat-plate heat pipe 4
Face 41 ensures good insulation.The material of radiating fin 5 is aluminium alloy, and uniformly coating is appropriate thick for the cryosurface 41 of flat-plate heat pipe 4
It is fastenedly connected after the heat-conducting silicone grease of degree with radiating fin 5 using detachable, and then the moment of LED chip 2 is started and normal work
The heat for making to produce causes radiating fin 5 through the directly conduction of flat-plate heat pipe 4, realizes that the quick of heat scatters and disappears.
As shown in Fig. 2 the multiple LED chip 2 be packaging pin in the same direction and LED chip 2 upward；LED chip 2
Welded with evaporating surface 41 by golden tin silver paste solder bottom surface；The one side of the LED chip 2 away from evaporating surface 41 is provided with the encapsulation
Pin, is directly connected respectively after the connection in series-parallel of plain conductor 6 that packaging pin passes through high conductivity with the both positive and negative polarity of circuit layer 3.Institute
The circuit layer 3 stated is directly arranged on the ALN insulating ceramicses of the evaporating surface 41 of flat-plate heat pipe 4, AlN ceramic thickness be 0.5~
1mm。
The preparation method of above-mentioned LED chip flat-plate heat pipe integrated encapsulation structure, comprises the following steps：
1) red copper sheet material is processed by machining process and produces red copper shell plates as the cryosurface of flat-plate heat pipe 4
42, ALN insulating ceramicses sheet material is produced as the evaporating surface 41 of flat-plate heat pipe 4 using laser processing, be respectively washed decontamination,
Drying；
2) such as Fig. 8, Fig. 9, produced and the porous suction of porous capillary liquid sucting core structure 411 and thin layer by machining process
The first sintering mold 7 and the second sintering mold 8 that wick-containing structure 421 is engaged respectively.Metal powder granulates are filled out respectively first
It is charged in two first sintering molds 7 and the second sintering mold 8 and red copper shell plates, the cavity of ALN insulated ceramic plates composition, makes many
Hole liquid sucting core structure 421, evaporating surface porous capillary liquid sucting core structure 411 are arranged at cryosurface 42, the center of evaporating surface 41.Again
It is respectively put into box atmosphere protection resistance furnace and carries out solid-phase sintering, sintering temperature is 900-950 DEG C, the sintered heat insulating time is
30-60min, is passed through hydrogen shield.Finally by the first sintering mold 7 in ALN insulated ceramic plates and on red copper shell plates and the
Two sintering molds 8 are extracted, so that porous capillary liquid sucting core structure 411 is obtained, and thin layer porous wick structure structure 421.Again will
Red copper shell plates is connected and sealed with ALN insulated ceramic plates by silver-bearing copper titanium vacuum brazing, to its inside carry out vacuumize and
Working medium is irrigated, the preparation of flat-plate heat pipe is completed.
3) as shown in Figure 4,5, mask prepares circuitous pattern in the evaporating surface 41ALN insulated ceramic plates of flat-plate heat pipe 4
31 and LED chip weld zone 211；
4) as shown in Figure 5 and Figure 6, cover behind LED chip weld zone 211, then by magnetron sputtering deposition method in flat board
Precipitation conductive metal atom formation circuit layer 3, shape and the phase of masking pattern figure 31 of circuit layer 3 on the evaporating surface 41 of heat pipe 4
Matching, thickness is 5-10um；
5) by packaging pin in the same direction and some LED chips 2 upward with after the connection in series-parallel of plain conductor 6 of high conductivity with electricity
The both positive and negative polarity of road floor 3 is connected respectively, and its chip bottom is welded direct to the evaporation of the flat-plate heat pipe 4 by the way of eutectic weldering
On the surface of face 41；
6) transparent silica gel 1 is encapsulated in LED chip 2 and circuit layer 3；
7) after the one layer of 0.1-0.3mm of surface even application of cryosurface 42 of flat-plate heat pipe 4 heat-conducting silicone grease, by flat board heat
Pipework condensation face 42 is attached with radiating fin 5 using removable be fastenedly connected, and completes LED chip flat-plate heat pipe integration packaging knot
The preparation of structure.
It is described above, only present pre-ferred embodiments, therefore the scope that the present invention is implemented can not be limited according to this, i.e., according to
The equivalent changes and modifications that the scope of the claims of the present invention and description are made, all should still belong in the range of the present invention covers.
Claims (3)
1. a kind of LED chip flat-plate heat pipe integrated encapsulation structure, it is characterised in that including transparent silica gel (1), multiple LED chips
(2), circuit layer (3), flat-plate heat pipe (4), radiating fin (5)；
The LED chip (2) is distributed in the upper surface of the circuit layer (3) in the way of matrix arrangement, and the circuit layer (3) is straight
Connect and be arranged on the evaporating surface of flat-plate heat pipe (4) (41), cryosurface (42) and radiating fin (5) shape of the flat-plate heat pipe (4)
It is fastenedly connected into detachable, the transparent silica gel (1) is directly arranged on some LED chips (2) and circuit layer (3), will
LED chip (2) is packaged in transparent silica gel (1)；
The evaporating surface (41) of the flat-plate heat pipe (4) is a plane AlN insulated ceramic plates, the cryosurface of the flat-plate heat pipe (4)
(42) towards the side of evaporating surface (41), along the recessed formation cavity in direction away from evaporating surface (41)；The evaporating surface (41)
There is porous capillary liquid sucting core structure (411) towards the side of cavity, the porous capillary liquid sucting core structure (411) includes an annulus
Plate, the surface of the Circular Plate axially has loose structure；What what the annulus plate surface was provided be radially distributed is interior
Groove, the two ends of the inner groovy are respectively communicated to the inner periphery and the outer periphery of Circular Plate；The cryosurface (42) is towards evaporating surface
(41) side is provided with thin layer porous wick structure structure (421)；
The porous capillary liquid sucting core structure (411) and thin layer porous wick structure structure (421) directly against merge be placed in it is described recessed
Intracavitary, the evaporating surface (41) and thin layer porous wick structure structure (421) are respectively positioned at the upper surface of the Circular Plate and following table
Face so that cavity one seal cavity of formation of Circular Plate circle centre position；The outer peripheral sidewall of the cryosurface (42), which is reserved with, to be vacuumized
With liquid feeding mouth (43).
2. a kind of LED chip flat-plate heat pipe integrated encapsulation structure according to claim 1, it is characterised in that：The multiple LED
Chip (2) be packaging pin in the same direction and LED chip (2) upward；LED chip (2) bottom surface passes through golden tin with evaporating surface (41)
Silver paste solder is welded；One side of the LED chip (2) away from evaporating surface (41) is provided with the packaging pin, and packaging pin passes through
Both positive and negative polarity after plain conductor (6) connection in series-parallel of high conductivity directly with circuit layer (3) is connected respectively.
3. a kind of preparation method of LED chip flat-plate heat pipe integrated encapsulation structure as claimed in claim 1, it is characterised in that including
Following steps：
1) red copper sheet material is processed by machining process and produces red copper shell plates as the cryosurface of flat-plate heat pipe (4)
(42) ALN insulating ceramicses sheet material, is produced as the evaporating surface (41) of flat-plate heat pipe (4) using laser processing, it is clear respectively
Remove dirty, drying；
2) using copper powder particle as raw material, using solid-phase sintering method, porous capillary liquid-sucking core knot is prepared on evaporating surface (41)
Structure (411), prepares thin layer porous wick structure structure (421) on cryosurface (42)；Evaporating surface (41) outward flange and with
Cryosurface (42) outward flange use silver-bearing copper titanium vacuum brazing airtight connection so that porous capillary liquid sucting core structure (411) with
Thin layer porous wick structure structure (421) is directly fitted, and a closed cavity is formed in porous capillary liquid sucting core structure (411).It is right
Inside cavity is vacuumized and irrigated working medium, completes the preparation of flat-plate heat pipe (4)；
3) mask prepares circuitous pattern (31) and LED chip in evaporating surface (41) ALN insulated ceramic plates of flat-plate heat pipe (4)
Weld zone (211)；
4) the conductive metal deposition atom formation circuit layer (3) on the evaporating surface (41) of flat-plate heat pipe (4)；
5) by packaging pin in the same direction and some LED chips (2) upward with after plain conductor (6) connection in series-parallel of high conductivity with electricity
The both positive and negative polarity of road floor (3) is connected respectively, and its chip bottom is welded direct to the flat-plate heat pipe (4) by the way of eutectic weldering
On evaporating surface (41) surface；
6) transparent silica gel (1) is encapsulated in LED chip (2) and circuit layer (3)；
7) after cryosurface (42) surface even application heat-conducting silicone grease of flat-plate heat pipe (4), by flat-plate heat pipe cryosurface (42) with
Radiating fin (5) is attached using removable be fastenedly connected, and completes the preparation of LED chip flat-plate heat pipe integrated encapsulation structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710646994.8A CN107275319B (en) | 2017-08-01 | 2017-08-01 | LED chip flat heat pipe integrated packaging structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710646994.8A CN107275319B (en) | 2017-08-01 | 2017-08-01 | LED chip flat heat pipe integrated packaging structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107275319A true CN107275319A (en) | 2017-10-20 |
| CN107275319B CN107275319B (en) | 2023-03-24 |
Family
ID=60075372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710646994.8A Active CN107275319B (en) | 2017-08-01 | 2017-08-01 | LED chip flat heat pipe integrated packaging structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107275319B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108842659A (en) * | 2018-07-02 | 2018-11-20 | 安徽昂然节能环保科技有限公司 | A kind of easily changeable energy-saving type traffic sign equipment |
| CN108914807A (en) * | 2018-07-02 | 2018-11-30 | 安徽昂然节能环保科技有限公司 | A kind of energy-saving type traffic sign component |
| CN108914806A (en) * | 2018-07-02 | 2018-11-30 | 安徽昂然节能环保科技有限公司 | A kind of combined type direction board component |
| CN111128759A (en) * | 2019-12-18 | 2020-05-08 | 中国科学院微电子研究所 | Integrated circuit chip heat dissipation structure, preparation method thereof and three-dimensional device |
| CN111174188A (en) * | 2020-01-10 | 2020-05-19 | 电子科技大学 | Circular array heat source heat dissipation device with structure and function integrated |
| CN111504107A (en) * | 2020-05-15 | 2020-08-07 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Tree-shaped structure heat pipe |
| CN112503985A (en) * | 2020-12-02 | 2021-03-16 | 深圳垒石热管理技术股份有限公司 | Manufacturing method of temperature-equalizing plate |
| CN114364209A (en) * | 2021-12-13 | 2022-04-15 | 江苏南瑞泰事达电气有限公司 | High-strength ceramic contact type high-voltage heat pipe cooling system |
| CN116653076A (en) * | 2023-05-29 | 2023-08-29 | 深圳大学 | Manufacturing method of ceramic vapor chamber based on 3D printing technology |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101052290A (en) * | 2007-05-11 | 2007-10-10 | 华南理工大学 | High efficiency heat radiation cool plate for electronic device |
| CN102778157A (en) * | 2011-05-12 | 2012-11-14 | 北京芯铠电子散热技术有限责任公司 | Flat plate vapor chamber and manufacturing method thereof |
| CN106091765A (en) * | 2016-06-15 | 2016-11-09 | 广东工业大学 | A kind of flat-plate heat pipe and preparation method thereof |
| CN106793685A (en) * | 2016-12-09 | 2017-05-31 | 淳铭散热科技股份有限公司 | A kind of composite heat dissipation device |
-
2017
- 2017-08-01 CN CN201710646994.8A patent/CN107275319B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101052290A (en) * | 2007-05-11 | 2007-10-10 | 华南理工大学 | High efficiency heat radiation cool plate for electronic device |
| CN102778157A (en) * | 2011-05-12 | 2012-11-14 | 北京芯铠电子散热技术有限责任公司 | Flat plate vapor chamber and manufacturing method thereof |
| CN106091765A (en) * | 2016-06-15 | 2016-11-09 | 广东工业大学 | A kind of flat-plate heat pipe and preparation method thereof |
| CN106793685A (en) * | 2016-12-09 | 2017-05-31 | 淳铭散热科技股份有限公司 | A kind of composite heat dissipation device |
Non-Patent Citations (1)
| Title |
|---|
| 纪献兵，徐进良，ABANDA AIME MARTHIAL，薛强: "超轻多孔泡沫金属平板热管的传热性能研究", 《中国电机工程学报》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108842659A (en) * | 2018-07-02 | 2018-11-20 | 安徽昂然节能环保科技有限公司 | A kind of easily changeable energy-saving type traffic sign equipment |
| CN108914807A (en) * | 2018-07-02 | 2018-11-30 | 安徽昂然节能环保科技有限公司 | A kind of energy-saving type traffic sign component |
| CN108914806A (en) * | 2018-07-02 | 2018-11-30 | 安徽昂然节能环保科技有限公司 | A kind of combined type direction board component |
| CN111128759A (en) * | 2019-12-18 | 2020-05-08 | 中国科学院微电子研究所 | Integrated circuit chip heat dissipation structure, preparation method thereof and three-dimensional device |
| CN111174188A (en) * | 2020-01-10 | 2020-05-19 | 电子科技大学 | Circular array heat source heat dissipation device with structure and function integrated |
| CN111174188B (en) * | 2020-01-10 | 2021-04-27 | 电子科技大学 | Circular array heat source heat dissipation device with structure and function integrated |
| CN111504107A (en) * | 2020-05-15 | 2020-08-07 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Tree-shaped structure heat pipe |
| CN112503985A (en) * | 2020-12-02 | 2021-03-16 | 深圳垒石热管理技术股份有限公司 | Manufacturing method of temperature-equalizing plate |
| CN114364209A (en) * | 2021-12-13 | 2022-04-15 | 江苏南瑞泰事达电气有限公司 | High-strength ceramic contact type high-voltage heat pipe cooling system |
| CN116653076A (en) * | 2023-05-29 | 2023-08-29 | 深圳大学 | Manufacturing method of ceramic vapor chamber based on 3D printing technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107275319B (en) | 2023-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107275319A (en) | A kind of LED chip flat-plate heat pipe integrated encapsulation structure and preparation method thereof | |
| CN101532612A (en) | Method for manufacturing integrated LED chip light source | |
| CN101614333A (en) | High-efficiency radiating LED illumination light source and manufacture method | |
| CN109860131A (en) | A kind of system-in-package structure with interior radiator | |
| CN102169839B (en) | Method for packaging preforming sheet by using Au-Sn solder | |
| CN207624677U (en) | Ceramic pad array shell | |
| CN102881806B (en) | Surface mounted device light emitting diode (SMD LED) unit and packaging method thereof | |
| CN202405323U (en) | Structure for directly packaging LED chips on vapor chamber and lamp employing same | |
| CN104600037A (en) | Multi-die high-power diode shell and manufacturing method thereof as well as chip packaging method | |
| JP5112374B2 (en) | Heat dissipating device for electronic equipment and manufacturing method thereof | |
| CN205897914U (en) | Flat plate heat pipe with multislot way sintering bearing structure | |
| CN205452355U (en) | High -power flip -chip structure ultraviolet LED solidification light source | |
| CN106098919A (en) | High-thermal-conductivity and high-insulation LED light engine packaging structure and preparation method | |
| CN207038524U (en) | A kind of LED chip flat-plate heat pipe integrated encapsulation structure | |
| CN108231698A (en) | Ceramic pad array shell | |
| TWI528596B (en) | Led package and method of manufacturing the same | |
| CN202474027U (en) | Combined type LED (Light-Emitting Diode) substrate | |
| CN204167364U (en) | High heat conduction aluminium nitride full porcelain LED shell | |
| CN207338428U (en) | A kind of encapsulating structure of ceramic substrate | |
| CN201682690U (en) | Heat dissipation device for printed circuit board | |
| CN201412705Y (en) | High-efficiency heat radiating LED lighting light source | |
| CN103745935B (en) | A kind of vacuole-free transparent glass shell and metal sealing method | |
| CN209981203U (en) | Chip packaging structure convenient and rapid to radiate | |
| CN210272327U (en) | Novel power module | |
| CN209199909U (en) | A kind of novel TO-220 type semiconductor package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |