CN107275319B - LED chip flat heat pipe integrated packaging structure and preparation method thereof - Google Patents
LED chip flat heat pipe integrated packaging structure and preparation method thereof Download PDFInfo
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- CN107275319B CN107275319B CN201710646994.8A CN201710646994A CN107275319B CN 107275319 B CN107275319 B CN 107275319B CN 201710646994 A CN201710646994 A CN 201710646994A CN 107275319 B CN107275319 B CN 107275319B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims abstract description 63
- 238000001704 evaporation Methods 0.000 claims abstract description 63
- 238000009833 condensation Methods 0.000 claims abstract description 31
- 230000005494 condensation Effects 0.000 claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000741 silica gel Substances 0.000 claims description 13
- 229910002027 silica gel Inorganic materials 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 6
- DCSUOJMMBYTVBC-UHFFFAOYSA-N [Ag][Au][Sn] Chemical compound [Ag][Au][Sn] DCSUOJMMBYTVBC-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 239000004519 grease Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 11
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- AHGIVYNZKJCSBA-UHFFFAOYSA-N [Ti].[Ag].[Cu] Chemical compound [Ti].[Ag].[Cu] AHGIVYNZKJCSBA-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED chip flat heat pipe integrated packaging structure and a preparation method thereof. The evaporation surface of the flat heat pipe is an ALN insulating ceramic plate, the condensation surface is a red copper shell plate, a porous capillary wick structure with radial inner grooves is arranged on the evaporation surface, a thin-layer porous wick structure is arranged on the condensation surface, and the evaporation surface is directly attached to the condensation surface. The LED chip is directly arranged on the ALN insulating ceramic plate on the evaporation surface of the flat heat pipe. The ALN insulating ceramic plate is adopted to replace a traditional metal plate to serve as the evaporation surface of the flat heat pipe, an insulating layer is not required to be arranged, the thermal stress of the packaging substrate and the LED chip is greatly reduced, the thermal resistance of a system is obviously reduced, the heat dissipation efficiency is improved, and the service life and the working reliability of the LED are prolonged.
Description
Technical Field
The invention relates to a packaging structure of a high-power multi-chip LED, in particular to an LED chip flat heat pipe integrated packaging structure and a preparation method thereof.
Background
With the development of LED semiconductor lighting towards high integration and high power, more and more chips are packaged on an LED substrate, and the heat flux density of the chips caused by the chips is higher and higher. At present, in a high-power LED integrated packaging structure, especially a multi-chip integrated packaging structure, the most commonly used packaging substrates are a copper substrate and an aluminum substrate, the thermal conductivity of the packaging substrates respectively reaches up to 398W/mK and 180W/mK, and the requirement of high-power LED heat dissipation is increasingly difficult to meet.
For the problem of heat dissipation in the high-power multi-chip LED package structure, researchers have proposed to use flat heat pipes and LED chip packages for heat dissipation, such as CN201220000690.7, CN201020539446.9, CN200920313589.5, CN200920302793.7, etc. However, the evaporation surface and the condensation surface of the flat heat pipe disclosed above are both formed by welding and splicing an upper metal cover plate and a lower metal cover plate, and the thermal expansion coefficient of the LED chip material is not matched with that of the metal material, so that the problem of serious thermal stress failure is easily caused; meanwhile, an insulating layer is required to be manufactured on the surface of the metal material before the circuit layer is manufactured, and the thermal resistance is obviously increased due to poor thermal conductivity of the insulating layer, so that the problem of heat dissipation of the LED chip is solved.
The AlN ceramic is used for an insulating substrate, a packaging substrate and a heat dissipation substrate of a high-power semiconductor device due to the excellent physical and chemical properties of high thermal conductivity and insulation and excellent matching with the thermal expansion coefficient of an LED chip material. AlN ceramic is used as an evaporation surface of the flat heat pipe and is directly packaged and attached with the LED chip, and no relevant report is found at present.
Disclosure of Invention
The invention aims to solve the main technical problem of providing an LED chip flat heat pipe integrated packaging structure and a preparation method thereof, wherein the heat conduction is fast, and the thermal stress of a packaging substrate and an LED chip is smaller.
In order to solve the technical problem, the invention provides an integrated packaging structure of an LED chip flat heat pipe, which comprises transparent silica gel, a plurality of LED chips, a circuit layer, a flat heat pipe and a radiating fin, wherein the transparent silica gel is arranged on the circuit layer;
the LED chips are distributed on the upper surface of the circuit layer in a matrix arrangement mode, the circuit layer is directly arranged on the evaporation surface of the flat heat pipe, the condensation surface of the flat heat pipe and the radiating fins form detachable fastening connection, the transparent silica gel is directly arranged on the LED chips and the circuit layer, and the LED chips are packaged in the transparent silica gel;
the evaporation surface of the flat heat pipe is a flat ALN insulating ceramic plate, and the condensation surface of the flat heat pipe faces to one side of the evaporation surface and is recessed along the direction far away from the evaporation surface to form a concave cavity; the side, facing the concave cavity, of the evaporation surface is provided with a porous capillary liquid absorption core structure, the porous capillary liquid absorption core structure comprises a circular ring plate, and the surface of the circular ring plate is provided with a porous structure along the axial direction; the surface of the circular ring plate is provided with radially distributed inner grooves, and two ends of each inner groove are respectively communicated to the inner periphery and the outer periphery of the circular ring plate; a thin-layer porous liquid absorption core structure is arranged on one side of the condensation surface facing the evaporation surface;
the porous capillary wick structure and the thin-layer porous wick structure are directly attached and are arranged in the concave cavity, and the evaporation surface and the thin-layer porous wick structure are respectively positioned on the upper surface and the lower surface of the circular ring plate, so that a cavity at the center of the circular ring plate forms a sealed cavity; and a vacuumizing and liquid filling port is reserved on the peripheral side wall of the condensation surface.
In a preferred embodiment: the LED chips are all LED chips with packaging pins in the same direction and facing upwards; the bottom surface of the LED chip is welded with the evaporation surface through gold-tin-silver paste welding flux; the surface, far away from the evaporation surface, of the LED chip is provided with the packaging pins, and the packaging pins are connected in series and in parallel through high-conductivity metal leads and then directly connected with the positive electrode and the negative electrode of the circuit layer respectively.
The invention also provides a preparation method of the LED chip flat heat pipe integrated packaging structure, which comprises the following steps:
1) Processing a red copper plate by a mechanical processing method to manufacture a red copper shell plate as a condensation surface of the flat heat pipe, manufacturing an ALN insulating ceramic plate as an evaporation surface of the flat heat pipe by a laser processing method, and respectively cleaning, decontaminating and drying;
2) Copper powder particles are used as raw materials, a solid-phase sintering method is adopted, a porous capillary liquid absorption core structure is prepared on an evaporation surface, and a thin-layer porous liquid absorption core structure is prepared on a condensation surface; the outer edge of the evaporation surface is hermetically connected with the outer edge of the condensation surface by adopting silver-copper-titanium vacuum brazing; directly attaching the porous capillary liquid absorption core structure and the thin-layer porous liquid absorption core structure, forming a closed cavity in the porous capillary liquid absorption core structure, vacuumizing the cavity and filling working medium into the cavity, and finishing the preparation of the flat heat pipe;
3) Preparing a circuit pattern and an LED chip welding area on an evaporation surface ALN insulating ceramic plate of the flat heat pipe by using a mask;
4) Depositing conductive metal atoms on the evaporation surface of the flat heat pipe to form a circuit layer;
5) Connecting a plurality of LED chips with the same direction and upward packaging pins in series and parallel by using high-conductivity metal leads and then respectively connecting the LED chips with the positive electrode and the negative electrode of the circuit layer, wherein the bottoms of the chips are directly welded on the surface of the evaporation surface of the flat heat pipe in an eutectic welding mode;
6) Packaging transparent silica gel on the LED chip and the circuit layer;
7) After the surface of the condensation surface of the flat heat pipe is uniformly coated with the heat-conducting silicone grease, the condensation surface of the flat heat pipe is connected with the radiating fins in a detachable fastening manner, and the preparation of the LED chip flat heat pipe integrated packaging structure is completed.
Compared with other structures for directly packaging the LED chip on the flat heat pipe, the invention has the following advantages:
1) The AlN insulating ceramic plate is adopted to replace the traditional metal material to be used as the evaporation surface of the flat heat pipe, has high insulativity and high thermal conductivity, and has good matching of the thermal expansion coefficient with the material of the LED chip, thereby greatly reducing the thermal stress of the packaging substrate and the LED chip;
2) Compared with the traditional LED packaging structure, the LED packaging structure has the advantages that the LED chip structure is directly arranged on the evaporation surface of the flat heat pipe, the insulating layer is arranged between the circuit layer and the flat heat pipe, the rapid dissipation of the heat of the LED is realized by utilizing the good heat conductivity of the ALN, the thermal resistance of the system is obviously reduced, the heat dissipation efficiency is greatly improved, the junction temperature of the LED chip is further reduced, and the service life and the reliability of the LED are prolonged.
Drawings
FIG. 1 is a sectional view of an LED chip flat heat pipe integrated package structure of the present invention;
FIG. 2 is a sectional view of an evaporation surface of a flat heat pipe with an integrated package of an LED chip according to the present invention;
FIG. 3 is an exploded view of a flat heat pipe according to the present invention;
FIG. 4 is a schematic diagram of a circuit pattern of an evaporation surface of a flat heat pipe and a chip bonding area according to the present invention;
FIG. 5 is a schematic diagram of an evaporation surface circuit of a flat heat pipe and a gold-tin-silver paste welding area according to the present invention;
FIG. 6 is a top view of an evaporation surface of a flat heat pipe with an integrated LED chip package according to the present invention;
FIG. 7 is a schematic view of a groove wick structure in the evaporation surface of a flat heat pipe according to the present invention;
FIG. 8 is a schematic representation of a mold used in the present invention to form a grooved wick structure in an evaporation surface;
fig. 9 is a schematic diagram of a mold used in the fabrication of a condensation surface wick structure according to the invention.
Detailed Description
The present invention will be described in detail with reference to the following embodiments and accompanying drawings for explaining the structural components, technical contents, objects, and operation of the invention.
As shown in fig. 1, an LED chip flat heat pipe integrated package structure includes a transparent silica gel 1, a plurality of LED chips 2, a circuit layer 3, a flat heat pipe 4, and a heat dissipation fin 5;
the LED chips 2 are distributed on the upper surface of the circuit layer 3 in a matrix arrangement mode, the circuit layer 3 is directly arranged on an evaporation surface 41 of the flat heat pipe 4, a condensation surface 42 of the flat heat pipe 4 is detachably and fixedly connected with the radiating fins 5, the transparent silica gel 1 is directly arranged on the LED chips 2 and the circuit layer 3, and the LED chips 2 are packaged in the transparent silica gel 1;
with further reference to fig. 3 and 7, the evaporation surface 41 of the flat heat pipe 4 is a flat ALN insulating ceramic plate, and the condensation surface 42 of the flat heat pipe 4 is recessed in a direction away from the evaporation surface 41 to form a cavity on a side facing the evaporation surface 41; the side of the evaporation surface 41 facing the cavity has a porous capillary wick structure 411, and the porous capillary wick structure 411 comprises a circular ring plate, and the surface of the circular ring plate has a porous structure along the axial direction; the surface of the circular ring plate is provided with radially distributed inner grooves, and two ends of each inner groove are respectively communicated to the inner periphery and the outer periphery of the circular ring plate; a thin-layer porous wick structure 421 is arranged on one side of the condensation surface 42 facing the evaporation surface 41;
the porous capillary wick structure 411 and the thin-layer porous wick structure 421 are directly attached and placed in the concave cavity, and the evaporation surface 41 and the thin-layer porous wick structure 421 are respectively located on the upper surface and the lower surface of the circular ring plate, so that a cavity at the center of the circular ring plate forms a sealed cavity; and a vacuumizing and liquid filling port 43 is reserved on the peripheral side wall of the condensation surface 42.
The evaporation surface 41 of the flat heat pipe 4 is made of ALN insulating ceramic, so that the LED chip 2 and the evaporation surface 41 of the flat heat pipe 4 are well insulated. The material of the radiating fin 5 is aluminum alloy, the condensing surface 41 of the flat heat pipe 4 is uniformly coated with heat-conducting silicone grease with proper thickness and then detachably fastened with the radiating fin 5, so that heat generated by instant starting and normal working of the LED chip 2 is directly transferred to the radiating fin 5 through the flat heat pipe 4, and rapid dissipation of the heat is realized.
As shown in fig. 2, the LED chips 2 are all LED chips 2 with package pins facing upward and in the same direction; the bottom surface of the LED chip 2 is welded with the evaporation surface 41 through gold-tin-silver paste welding flux; the surface of the LED chip 2, which is far away from the evaporation surface 41, is provided with the packaging pins, and the packaging pins are connected in series and in parallel through the high-conductivity metal wires 6 and then are directly connected with the positive electrode and the negative electrode of the circuit layer 3 respectively. The circuit layer 3 is directly arranged on the ALN insulating ceramic of the evaporation surface 41 of the flat heat pipe 4, and the thickness of the ALN insulating ceramic is 0.5-1 mm.
The preparation method of the LED chip flat heat pipe integrated packaging structure comprises the following steps:
1) Processing a red copper plate by a mechanical processing method to manufacture a red copper shell plate as a condensation surface 42 of the flat heat pipe 4, manufacturing an ALN insulating ceramic plate as an evaporation surface 41 of the flat heat pipe 4 by a laser processing method, and respectively cleaning, decontaminating and drying;
2) As shown in fig. 8 and 9, first sintered mold 7 and second sintered mold 8 are machined to mate with porous capillary wick structure 411 and thin-layer porous wick structure 421, respectively. Firstly, metal powder particles are respectively filled into cavities formed by the two first sintering molds 7 and the second sintering molds 8, the red copper shell plate and the ALN insulating ceramic plate, so that the porous liquid absorption core structure 421 and the evaporation surface porous capillary liquid absorption core structure 411 are respectively arranged at the centers of the condensation surface 42 and the evaporation surface 41. Then respectively placing the mixture into a box-type atmosphere protection resistance furnace for solid-phase sintering, wherein the sintering temperature is 900-950 ℃, the sintering heat preservation time is 30-60min, and introducing hydrogen for protection. Finally, the first 7 and second 8 sintering molds on the ALN insulating ceramic plate and on the copper shell plate are pulled out, so as to obtain the porous capillary wick structure 411, as well as the thin-layer porous wick structure 421. And then, hermetically connecting the red copper shell plate with the ALN insulating ceramic plate through silver-copper-titanium vacuum brazing, vacuumizing the interior of the red copper shell plate and filling working media into the interior of the red copper shell plate, and thus finishing the preparation of the flat heat pipe.
3) As shown in fig. 4 and 5, a circuit pattern 31 and an LED chip bonding pad 211 are formed on the evaporation surface 41ALN insulating ceramic plate of the flat heat pipe 4 by masking;
4) As shown in fig. 5 and 6, after covering the LED chip bonding area 211, depositing conductive metal atoms on the evaporation surface 41 of the flat heat pipe 4 by magnetron sputtering deposition to form a circuit layer 3, wherein the shape of the circuit layer 3 is matched with the mask circuit pattern 31, and the thickness of the circuit layer 3 is 5-10um;
5) Connecting a plurality of upward LED chips 2 with the same direction of packaging pins in series and parallel by using high-conductivity metal wires 6, and then respectively connecting the LED chips with the positive electrode and the negative electrode of the circuit layer 3, wherein the bottoms of the chips are directly welded on the surface of an evaporation surface 41 of the flat heat pipe 4 in an eutectic welding mode;
6) Transparent silica gel 1 is packaged on the LED chip 2 and the circuit layer 3;
7) After a layer of heat-conducting silicone grease with the thickness of 0.1-0.3mm is uniformly coated on the surface of the condensation surface 42 of the flat heat pipe 4, the condensation surface 42 of the flat heat pipe is detachably and fixedly connected with the radiating fins 5, and the preparation of the LED chip flat heat pipe integrated packaging structure is completed.
The above description is only a preferred embodiment of the present invention, and therefore should not be taken as limiting the scope of the invention, which is defined by the appended claims and their equivalents.
Claims (2)
1. A preparation method of an LED chip flat heat pipe integrated packaging structure is characterized by comprising the following steps:
the LED chip flat heat pipe integrated packaging structure comprises transparent silica gel (1), a plurality of LED chips (2), a circuit layer (3), a flat heat pipe (4) and radiating fins (5); the LED chips (2) are distributed on the upper surface of the circuit layer (3) in a matrix arrangement mode, the circuit layer (3) is directly arranged on an evaporation surface (41) of the flat heat pipe (4), a condensation surface (42) of the flat heat pipe (4) is detachably and fixedly connected with the radiating fins (5), the transparent silica gel (1) is directly arranged on the LED chips (2) and the circuit layer (3), and the LED chips (2) are packaged in the transparent silica gel (1); the evaporation surface (41) of the flat heat pipe (4) is a flat AlN insulating ceramic plate, and the condensation surface (42) of the flat heat pipe (4) is concave downwards along the direction far away from the evaporation surface (41) to form a concave cavity towards one side of the evaporation surface (41); the side of the evaporation surface (41) facing the cavity is provided with a porous capillary wick structure (411), and the porous capillary wick structure (411) comprises a circular ring plate, and the surface of the circular ring plate is provided with a porous structure along the axial direction; the surface of the circular ring plate is provided with radially distributed inner grooves, and two ends of each inner groove are respectively communicated to the inner periphery and the outer periphery of the circular ring plate; a thin-layer porous liquid absorption core structure (421) is arranged on one side of the condensation surface (42) facing the evaporation surface (41); the porous capillary wick structure (411) and the thin-layer porous wick structure (421) are directly attached and are arranged in the concave cavity, and the evaporation surface (41) and the thin-layer porous wick structure (421) are respectively arranged on the upper surface and the lower surface of the circular ring plate, so that a cavity at the center of the circular ring plate forms a sealed cavity; a vacuumizing and liquid filling port (43) is reserved on the peripheral side wall of the condensation surface (42);
the preparation method of the LED chip flat heat pipe integrated packaging structure comprises the following steps:
1) Processing a red copper plate by a mechanical processing method to manufacture a red copper shell plate as a condensation surface (42) of the flat heat pipe (4), manufacturing an ALN insulating ceramic plate as an evaporation surface (41) of the flat heat pipe (4) by a laser processing method, and respectively cleaning, decontaminating and drying;
2) Copper powder particles are used as raw materials, a solid-phase sintering method is adopted, a porous capillary wick structure (411) is prepared on an evaporation surface (41), and a thin-layer porous wick structure (421) is prepared on a condensation surface (42); the outer edge of the evaporation surface (41) and the outer edge of the condensation surface (42) are hermetically connected by silver, copper and titanium vacuum brazing, so that the porous capillary wick structure (411) is directly attached to the thin-layer porous wick structure (421), and a closed cavity is formed in the porous capillary wick structure (411); vacuumizing the cavity and filling working media into the cavity to finish the preparation of the flat heat pipe (4);
3) Preparing a circuit pattern (31) and an LED chip welding area (211) on an evaporation surface (41) ALN insulating ceramic plate of the flat heat pipe (4) by masking;
4) Depositing conductive metal atoms on an evaporation surface (41) of the flat heat pipe (4) to form a circuit layer (3);
5) Connecting a plurality of upward LED chips (2) with the same direction of packaging pins in series and parallel by using high-conductivity metal leads (6) and then respectively connecting the LED chips with the positive electrode and the negative electrode of the circuit layer (3), wherein the bottoms of the chips are directly welded on the surface of an evaporation surface (41) of the flat heat pipe (4) in an eutectic welding mode;
6) Transparent silica gel (1) is packaged on the LED chip (2) and the circuit layer (3);
7) After heat-conducting silicone grease is uniformly coated on the surface of the condensation surface (42) of the flat heat pipe (4), the condensation surface (42) of the flat heat pipe is connected with the radiating fins (5) in a detachable fastening connection mode, and the preparation of the LED chip flat heat pipe integrated packaging structure is completed.
2. The method for preparing the LED chip flat heat pipe integrated package structure according to claim 1, wherein the method comprises the following steps: the LED chips (2) are all the LED chips (2) with the packaging pins in the same direction and facing upwards; the bottom surface of the LED chip (2) is welded with the evaporation surface (41) through gold-tin-silver paste solder; the surface, far away from the evaporation surface (41), of the LED chip (2) is provided with the packaging pins, and the packaging pins are directly connected with the positive electrode and the negative electrode of the circuit layer (3) respectively after being connected in series and in parallel through high-conductivity metal wires (6).
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| CN201710646994.8A CN107275319B (en) | 2017-08-01 | 2017-08-01 | LED chip flat heat pipe integrated packaging structure and preparation method thereof |
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| CN108914806A (en) * | 2018-07-02 | 2018-11-30 | 安徽昂然节能环保科技有限公司 | A kind of combined type direction board component |
| CN111128759B (en) * | 2019-12-18 | 2022-02-22 | 中国科学院微电子研究所 | Integrated circuit chip heat dissipation structure, preparation method thereof and three-dimensional device |
| CN111174188B (en) * | 2020-01-10 | 2021-04-27 | 电子科技大学 | Circular array heat source heat dissipation device with structure and function integrated |
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