CN110828398A - Integrated soaking substrate for power semiconductor module packaging and manufacturing method thereof - Google Patents
Integrated soaking substrate for power semiconductor module packaging and manufacturing method thereof Download PDFInfo
- Publication number
- CN110828398A CN110828398A CN201810895822.9A CN201810895822A CN110828398A CN 110828398 A CN110828398 A CN 110828398A CN 201810895822 A CN201810895822 A CN 201810895822A CN 110828398 A CN110828398 A CN 110828398A
- Authority
- CN
- China
- Prior art keywords
- soaking
- integrated
- metal
- plate
- soaking plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
Abstract
The application provides an integrated soaking substrate for packaging a power semiconductor module and a manufacturing method thereof. The integrated soaking substrate and the manufacturing method thereof overcome the problems of large thermal resistance of a module, low reliability and complex process caused by the connection of the traditional solder layers, and meanwhile, the soaking substrate has light weight because the soaking substrate main body comprises the metal groove, thereby achieving the effects of low thermal resistance, good soaking property and light weight.
Description
Technical Field
The present invention relates to the field of power semiconductor module design and packaging technology, and more particularly, to an integrated soaking substrate for power semiconductor module packaging and a method of manufacturing the same.
Background
In operation of the power semiconductor module, the power semiconductor chip generates power loss. With the improvement of current and voltage grades and the requirements of application environments on the miniaturization and light weight of the power semiconductor module, the requirements of the power semiconductor module on heat dissipation are higher and higher. In a conventional power semiconductor module, most of the heat generated by the power loss of the chip is diffused to a heat sink through a chip solder layer, a ceramic backing plate, a backing plate solder layer, a substrate and a tim (thermal Interface material) in sequence. In the overall thermal resistance, the TIM and the solder layer account for about 55%, which is a major factor affecting the heat dissipation of the power semiconductor module. At the same time, the solder layer is also an important factor affecting the reliability and life of the module. The power semiconductor module requires good module heat uniformity, which is beneficial to improving the electric heating characteristics such as chip current sharing, improving the reliability of the whole module and prolonging the service life of the module.
In order to improve the heat dissipation problem of the conventional power module in application, a great deal of work is performed by researchers. For example, in some schemes, the heat spreader plate heat dissipation system is composed of a vacuum cavity with a fine structure inside the heat spreader plate heat dissipation substrate and a certain number of heat dissipation fins connected with the vacuum cavity, wherein the vacuum cavity is provided with a certain number of supporting blocks for supporting the upper surface and the lower surface of the cavity, and a proper amount of heat dissipation medium is injected into the vacuum cavity. A copper-clad ceramic substrate is welded on the soaking plate radiating substrate through a solder, a power device is welded on a copper layer on the ceramic substrate through the solder, the power device is connected through a conducting wire to form a circuit structure, and the copper layer on the lower surface of the copper-clad ceramic substrate is welded on the soaking plate radiating substrate through the solder to form power module packaging. However, the heat-dissipating substrate of the soaking plate and the ceramic substrate need to be soldered together by solder, so that the thermal resistance of the module is increased, the reliability of the module is reduced, and the number of process steps is increased due to the soldering. In other solutions, a water-cooled plate is used instead of a normal substrate in the heat-dissipating substrate, and an insulating substrate (i.e., a ceramic backing plate) is still soldered to the substrate by solder. In addition, the integrated substrate has higher requirements on the flatness and the plating layer of the water-cooled plate, has high cost and is not suitable for batch production.
Therefore, how to provide an integrated soaking substrate with low thermal resistance, good soaking performance and light weight and a manufacturing method thereof are of great significance for packaging a power semiconductor module.
Disclosure of Invention
To solve the problems in the prior art, the application provides an integrated soaking substrate for packaging a semiconductor power module, which takes a soaking plate as a structural main body, and simultaneously sinters an upper plate, an insulating ceramic layer and an overlying metal layer of the soaking plate into a whole, thereby realizing the advantages of low thermal resistance, good soaking property and light weight.
The integrated soaking substrate for packaging the semiconductor power module comprises a soaking plate body, a soaking plate upper plate, an insulating ceramic layer and an overlying metal layer, wherein the soaking plate body comprises a metal groove, and the soaking plate body, the soaking plate upper plate, the insulating ceramic layer and the overlying metal layer are of an integrated structure. The integrated soaking substrate can realize the purposes of good heat conductivity, outstanding heat uniformity and light weight.
In one embodiment, the integral construction is achieved by using a direct copper clad process or an active metal brazing process. Through the embodiment, the welding layer formed by the traditional solder can not appear among the soaking plate body, the soaking plate upper plate, the insulating ceramic layer and the overlying metal layer, and the thermal resistance is reduced.
In one embodiment, the integrated soaking substrate further comprises a radiating fin, a supporting column, a fine structure, a phase-change medium injection port and a phase-change medium, wherein the radiating fin is connected with the bottom of the soaking plate body, and the supporting column and the fine structure are arranged in a metal groove of the soaking plate body.
In one embodiment, the support posts and/or the heat dissipating fins are integrally constructed with the soaking plate body. This embodiment can further reduce the thermal resistance, improve the mechanical properties, and achieve an effect of good heat uniformity.
In one embodiment, the microstructure is formed by sintering metal powder, or is filled with metal mesh, or is formed by grooves on the inner wall surface of the cavity.
In one embodiment, the soaking plate body and the soaking plate upper plate are made of the same material.
In one embodiment, the insulating ceramic layer is made of aluminum oxide, aluminum nitride, or silicon nitride.
In one embodiment, the overlying metal layer is made of copper or aluminum.
In one embodiment, the exterior surfaces of the soaking plate body, the soaking plate upper plate and the overlying metal layer are plated with a metal layer having good solderability and oxidation resistance.
In one embodiment, the phase change medium main inlet is positioned on the side surface or the bottom of the soaking plate body.
In the method of manufacturing an integrated soaking substrate for power semiconductor module packaging provided by the present invention, the method includes: step 1: the upper plate of the soaking plate, the insulating ceramic layer and the upper metal layer are integrally constructed from bottom to top; step 2: the bottom surface of the upper soaking plate and the soaking plate main body are constructed into a whole, wherein the soaking plate main body comprises a metal groove, a vacuum cavity containing a fine structure and a plurality of support columns for supporting the upper soaking plate are arranged in the metal groove, the bottom of the soaking plate main body is connected with a plurality of radiating fins, and a phase-change medium injection port is arranged on the side surface or the bottom of the soaking plate main body; and step 3: injecting a phase change medium into the vacuum cavity through the phase change medium injection port; and 4, step 4: and sealing the phase change medium injection port.
In one embodiment, steps 1 and 2 are achieved by using a direct copper clad process or an active metal brazing process.
The integrated soaking substrate for packaging the semiconductor power module and the manufacturing method thereof have the advantages that the soaking plate main body, the soaking plate upper plate, the insulating ceramic layer and the overlying metal layer are integrated, the problems of high module thermal resistance, low reliability and complex process caused by the connection of the traditional solder layer are solved due to the fact that the solder layer is avoided, and meanwhile, the soaking plate main body comprises the metal groove, so that the soaking plate has light weight, and the effects of low thermal resistance, good soaking performance and light weight are achieved.
The features mentioned above can be combined in various suitable ways or replaced by equivalent features as long as the object of the invention is achieved.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
fig. 1 shows a schematic cross-sectional view of an integrated soaking substrate for semiconductor module packaging according to an embodiment of the present invention;
fig. 2 shows a perspective view of an integrated soaking substrate for semiconductor module packaging according to an embodiment of the present invention;
fig. 3 shows a schematic flow diagram of a method for manufacturing an integrated soaking substrate for semiconductor module packaging according to an embodiment of the present invention;
wherein, 1-integrated soaking substrate; 2-soaking plate body; 3, putting the soaking plate on the board; 4-an insulating ceramic layer; 5-covering a metal layer; 6-fine structure; 7-a support column; 8-radiating fins; 9-phase change medium injection port; 10-phase change medium.
In the drawings, like parts are provided with like reference numerals. The drawings are not to scale.
Detailed Description
The invention will be further explained with reference to the drawings.
Fig. 1 and 2 show a cross-sectional view and a perspective view of an integrated soaking substrate 1 for semiconductor power module packaging according to the present invention. In fig. 1 and 2, the integrated soaking substrate 1 sequentially includes a soaking plate main body 2, a soaking plate upper plate 3, an insulating ceramic layer 4, and an overlying metal layer 5 from bottom to top, wherein the soaking plate main body 22 includes a metal groove made using copper, aluminum, nickel, or tin alloy, and the soaking plate main body 2, the soaking plate upper plate 3, the insulating ceramic layer 4, and the overlying metal layer 5 form the integrated soaking substrate 1 through an integration process. Since the conventional solder layer is avoided in the soaking substrate 1 to connect the soaking plate and the power device, the integrated structure has the advantages of good thermal conductivity and thermal uniformity, light weight, easy processing and the like.
Specifically, the integrated soaking substrate 1 and the soaking plate main body 2 are metal grooves made of copper, aluminum, nickel or tin alloy, the thickness of the metal grooves is preferably 5mm, the groove depth is preferably 3mm, a vacuum cavity with a fine structure 6 and a certain number of supporting columns 7 for supporting the soaking plate upper plate 3 are arranged in the middle, a certain number of radiating fins 8 are connected to the bottom, and the radiating fins 8 are used for increasing the radiating area.
Preferably, the supporting posts 7 are integrally constructed with the soaking plate main body 2 to improve the mechanical characteristics of the soaking substrate; and/or the heat radiating fins 8 and the soaking plate main body 2 are integrated to increase the heat radiating area of the soaking substrate 1 and improve the heat radiating efficiency.
Wherein, the microstructure 6 is formed by sintering metal powder, filling metal net or groove on the inner wall surface of the cavity, and the phase-change medium 10 in liquid state returns to the bottom of the upper plate 3 of the soaking plate under the action of capillary force. Specifically, when the heat is transferred to the upper plate 3 of the soaking plate and exceeds a certain amount, the phase-change medium 10 absorbs a large amount of heat at the heat source end through vaporization, the vapor-state heat-conducting medium moves to the cooling end of the lower surface due to pressure difference to release heat and condenses into a liquid state, the liquid-state heat-conducting medium returns to the heat source end under the action of capillary force of the micro-structure 6 in the cavity, and the heat released by the phase-change medium 10 at the cooling end is dissipated to the outside through the heat dissipation fins 8 connected with the phase-change medium.
In addition, a phase change medium injection port 9 is reserved on the side surface or the bottom surface of the soaking plate main body 2 and is used for injecting a phase change medium 10. The phase-change medium 10 is usually prepared by pure water, liquid ammonia or trifluorodichloroethane nanofluid, and the injection amount depends on the requirement of heat dissipation working conditions. The injection process is suggested to be placed in the final step of module encapsulation to prevent deformation of the vapor chamber due to vaporization of the phase change medium 10 at high temperatures.
The upper vapor chamber 3 is a metal thin plate made of the same material as the main vapor chamber 2, i.e., made of copper, aluminum, nickel or tin alloy, and has a thickness of 1-2mm, preferably 1mm, and the metal groove structure of the main vapor chamber 2 and the upper vapor chamber 3 together define a vacuum chamber as an injection region for the phase change medium 10. The two can be sintered into a whole by Direct Bonded Copper (DBC) process or Active Metal Brazing (AMB) process, and the top plate 3 of the soaking plate can also be sintered into a whole with the insulating ceramic layer 4 and the overlying Metal layer 5 by DBC or AMB process.
The insulating ceramic layer 4 is made of good heat conducting materials resistant to high pressure and high temperature, such as aluminum oxide, aluminum nitride or silicon nitride, and the thickness of the insulating ceramic layer is usually determined by the withstand voltage grade and the required mechanical strength due to the problems of the preparation process and the tooling, and can be selected to be 0.3mm, 0.64mm or 1mm, and is preferably 0.64mm according to different voltage grades.
The upper metal coating 5 is a metal thin plate made of copper, aluminum, etc., and has a thickness of usually 0.3mm, and can be divided into a plurality of areas according to the packaging requirements of the power semiconductor module, such as an anode area, a cathode area, etc., for welding the power semiconductor chip and binding wire bonding, in fig. 1 and 2, the upper metal coating 5 is divided into two areas for welding different chips, respectively.
Preferably, the outer surfaces of the soaking plate main body 2, the soaking plate upper plate 3 and the overlying metal layer 4 of the integrated soaking substrate 1 are plated with metal layers of Cu, Ni, Au, Sn and the like with good solderability and oxidation resistance, so that the integrated soaking substrate has good solderability and oxidation resistance. By this configuration, sintering reliability and stability of the soaking plate main body 2, the soaking plate upper plate 3, and the overlying metal layer 4 can be ensured with respect to each other.
The present invention also provides a method 300 of manufacturing an integrated soaking substrate for semiconductor power module packaging, which may include the steps of:
s310: the soaking plate upper plate 3, the insulating ceramic layer 4 and the upper metal layer 5 are integrally constructed in the sequence from bottom to top;
s320: the bottom surface of the upper soaking plate 3 and the main soaking plate body 2 are constructed into a whole, wherein the main soaking plate body 2 comprises a metal groove, a vacuum cavity containing a fine structure 4 and a plurality of supporting columns 7 for supporting the upper soaking plate 3 are arranged in the metal groove, the bottom of the main soaking plate body 2 is connected with a plurality of radiating fins 8, and a phase-change medium injection port 9 is arranged on the side surface or the bottom of the main soaking plate body 2;
s330: injecting a phase change medium 10 into the vacuum cavity through a phase change medium injection port 9;
s3404: and sealing the phase change medium injection port 9.
In S310 and S320 of the above method, the integrated structure is realized by a direct copper bonding process (DBC) or an active metal brazing process (AMB), so as to reduce the thermal resistance of the soaking substrate and improve the heat dissipation efficiency.
By the integrated soaking substrate for packaging the power semiconductor module and the manufacturing method thereof, the integrated soaking substrate has lower heat conductivity coefficient and excellent heat uniformity, the service life of a semiconductor device can be effectively prolonged, and the reliability of the semiconductor device is improved; meanwhile, the vacuum cavity is formed by the metal groove in the vacuum cavity, so that the vacuum cavity has light weight; the integrated soaking substrate is internally integrated with the insulating ceramic layer and has a heat-collecting and radiating structure, so that the selection scheme of materials and thicknesses of each layer of the thermal expansion coefficient is simplified, the semiconductor module is easy to package, and a customized scheme and a batched product are easy to provide for the power semiconductor module package.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "bottom", "top", "front", "rear", "inner", "outer", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (10)
1. The utility model provides an integration soaking base plate for power semiconductor module encapsulation which characterized in that, includes soaking board body, soaking board upper plate, insulating ceramic layer and coats the metal level, wherein, the soaking board main part includes the metal slot, just the soaking board body the soaking board upper plate insulating ceramic layer with it constructs as an organic whole to coat the metal level.
2. The integrated soaking substrate according to claim 1, wherein the integrated configuration is realized by using a direct copper-clad process or an active metal brazing process.
3. The integrated soaking substrate according to claim 1 or 2, further comprising heat dissipating fins, support pillars, microstructures, phase change medium injection ports, and phase change media;
the heat radiating fins are connected with the bottom of the soaking plate body, and the supporting columns and the fine structures are arranged in the metal grooves of the soaking plate body.
4. The integrated soaking substrate according to claim 3, wherein the supporting columns and/or the heat dissipating fins are integrally configured with the soaking plate body.
5. The integrated soaking substrate according to claim 3, wherein the fine structure is formed by sintering metal powder, or is formed by filling metal mesh, or is formed by grooves on the inner wall surface of the cavity.
6. The integrated soaking substrate according to claim 1 or 2, wherein the insulating ceramic layer is made of alumina, aluminum nitride, or silicon nitride.
7. The integrated soaking substrate according to claim 1 or 2, wherein the overlying metal layer is made of copper or aluminum.
8. The integrated soaking substrate according to claim 1 or 2, wherein the outer surfaces of the soaking plate body, the soaking plate upper plate and the overlying metal layer are plated with metal layers having good solderability and oxidation resistance.
9. A method of manufacturing an integrated heat spreader substrate for a power semiconductor module package, the method comprising:
step 1: the upper plate of the soaking plate, the insulating ceramic layer and the upper metal layer are integrally constructed from bottom to top;
step 2: the bottom surface of the upper soaking plate and the soaking plate main body are constructed into a whole, wherein the soaking plate main body comprises a metal groove, a vacuum cavity containing a fine structure and a plurality of support columns for supporting the upper soaking plate are arranged in the metal groove, the bottom of the soaking plate main body is connected with a plurality of radiating fins, and a phase-change medium injection port is arranged on the side surface or the bottom of the soaking plate main body;
and step 3: injecting a phase change medium into the vacuum cavity through the phase change medium injection port;
and 4, step 4: and sealing the phase change medium injection port.
10. The method of claim 9, wherein steps 1 and 2 are achieved by using a direct copper clad process or an active metal brazing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895822.9A CN110828398A (en) | 2018-08-08 | 2018-08-08 | Integrated soaking substrate for power semiconductor module packaging and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895822.9A CN110828398A (en) | 2018-08-08 | 2018-08-08 | Integrated soaking substrate for power semiconductor module packaging and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110828398A true CN110828398A (en) | 2020-02-21 |
Family
ID=69535278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810895822.9A Pending CN110828398A (en) | 2018-08-08 | 2018-08-08 | Integrated soaking substrate for power semiconductor module packaging and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110828398A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696935A (en) * | 2020-06-22 | 2020-09-22 | 萍乡伊博智能科技有限公司 | Heat dissipation member for laminated packaging structure, manufacturing method thereof and packaging structure |
| CN113241333A (en) * | 2021-04-30 | 2021-08-10 | 阳光电源股份有限公司 | Power device heat dissipation system, assembly method thereof and semiconductor equipment |
| CN113838821A (en) * | 2020-06-24 | 2021-12-24 | 深圳第三代半导体研究院 | Heat dissipation member for SiC planar packaging structure and preparation method thereof |
| CN116864464A (en) * | 2023-07-14 | 2023-10-10 | 江苏爱矽半导体科技有限公司 | Semiconductor packaging structure and use method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090145642A1 (en) * | 2006-06-06 | 2009-06-11 | Mitsubishi Materials Corporation | Power element mounting substrate, method of manufacturing the same, power element mounting unit, method of manufacturing the same, and power module |
| CN102714929A (en) * | 2010-01-12 | 2012-10-03 | 日本轻金属株式会社 | Substrate with integrated fins and method of manufacturing substrate with integrated fins |
| CN103887247A (en) * | 2012-12-19 | 2014-06-25 | 通用电气公司 | Power module package |
-
2018
- 2018-08-08 CN CN201810895822.9A patent/CN110828398A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090145642A1 (en) * | 2006-06-06 | 2009-06-11 | Mitsubishi Materials Corporation | Power element mounting substrate, method of manufacturing the same, power element mounting unit, method of manufacturing the same, and power module |
| CN102714929A (en) * | 2010-01-12 | 2012-10-03 | 日本轻金属株式会社 | Substrate with integrated fins and method of manufacturing substrate with integrated fins |
| CN103887247A (en) * | 2012-12-19 | 2014-06-25 | 通用电气公司 | Power module package |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696935A (en) * | 2020-06-22 | 2020-09-22 | 萍乡伊博智能科技有限公司 | Heat dissipation member for laminated packaging structure, manufacturing method thereof and packaging structure |
| CN113838821A (en) * | 2020-06-24 | 2021-12-24 | 深圳第三代半导体研究院 | Heat dissipation member for SiC planar packaging structure and preparation method thereof |
| CN113241333A (en) * | 2021-04-30 | 2021-08-10 | 阳光电源股份有限公司 | Power device heat dissipation system, assembly method thereof and semiconductor equipment |
| CN116864464A (en) * | 2023-07-14 | 2023-10-10 | 江苏爱矽半导体科技有限公司 | Semiconductor packaging structure and use method thereof |
| CN116864464B (en) * | 2023-07-14 | 2024-04-09 | 江苏爱矽半导体科技有限公司 | Semiconductor packaging structure and use method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110828398A (en) | Integrated soaking substrate for power semiconductor module packaging and manufacturing method thereof | |
| CN107170714B (en) | Low parasitic inductance power module and double-sided heat dissipation low parasitic inductance power module | |
| US4233645A (en) | Semiconductor package with improved conduction cooling structure | |
| JP2592308B2 (en) | Semiconductor package and computer using the same | |
| CN104486901B (en) | Radiating insulating liner plate, package module comprising this liner plate and preparation method thereof | |
| US20080079021A1 (en) | Arrangement for cooling a power semiconductor module | |
| CN102683301B (en) | Semiconductor devices including base | |
| US20050141195A1 (en) | Folded fin microchannel heat exchanger | |
| JP2012528471A (en) | Cooled electrical component unit | |
| CN107275319B (en) | LED chip flat heat pipe integrated packaging structure and preparation method thereof | |
| WO2020248905A1 (en) | Wafer-level 3d stacked microchannel heat dissipation structure and manufacturing method therefor | |
| EP3276657B1 (en) | Cooler, power semiconductor module arrangement having a cooler, and method for producing the same | |
| CN103457151B (en) | The quasi-continuous semiconductor laser bar of a kind of high temperature braze material folds battle array method for packing | |
| US20160056088A1 (en) | Cold Plate, Device Comprising a Cold Plate and Method for Fabricating a Cold Plate | |
| KR20190098971A (en) | Carrier Substrate for Electrical Element and Manufacturing Method of Carrier Substrate | |
| CN105655307A (en) | Power module structure with vapor chamber heat radiation substrate | |
| CN111725144A (en) | High-temperature electronic packaging substrate material device based on gas-liquid phase change and preparation method thereof | |
| CN111403376B (en) | Airtight packaging structure of integrated thermoelectric refrigerator and preparation method thereof | |
| CN109560054A (en) | A kind of metallic micro channel heat sink structure and its manufacturing method applied to chip cooling | |
| CN111627875A (en) | High heat conduction heat abstractor | |
| CN101882606B (en) | Heat-dissipation semiconductor encapsulation structure and manufacturing method thereof | |
| CN111524814B (en) | Preparation method of high-reliability and high-density integrated structure of power device | |
| CN205428902U (en) | Soaking board radiating basal plate power modular structure | |
| CN209418488U (en) | A kind of metallic micro channel heat sink structure applied to chip cooling | |
| CN111933597A (en) | DBC substrate, manufacturing method thereof, power module and power module heat dissipation system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200928 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Applicant after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Applicant before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200221 |