CN205543689U - High power semiconductor laser - Google Patents
High power semiconductor laser Download PDFInfo
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- CN205543689U CN205543689U CN201620222941.4U CN201620222941U CN205543689U CN 205543689 U CN205543689 U CN 205543689U CN 201620222941 U CN201620222941 U CN 201620222941U CN 205543689 U CN205543689 U CN 205543689U
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- semiconductor laser
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- power semiconductor
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a novel high power semiconductor laser can solve effectively that the laser instrument qualification rate is low among the present structure plan, technology is complicated, the bonded quality poor and the not high scheduling problem of reliability, promotes conduction cooling type high power semiconductor laser to more high power development. This high power semiconductor laser includes radiator and the chipset module that comprises a plurality of laser instrument chip and substrate, and the solder bonded is passed through to the radiator in the bottom of substrate, the main part of substrate is the thermal insulation piece, bonded corresponding to laser instrument chip on the substrate is regional, the front of thermal insulation piece and the back all are provided with the electricity conductive and heat conductive layer, form the electricity via the surface of thermal insulation piece and/or the inside conducting material who link up the setting between the electricity conductive and heat conductive layer at positive electricity conductive and heat conductive layer and the back and are connected.
Description
Technical field
This utility model relates to the structure of a kind of high-power semiconductor laser.
Background technology
The packaging technology of existing conduction cooling type high-power semiconductor laser is as shown in Fig. 1～2.
Scheme shown in Fig. 1 is by multiple chips and multiple conductive and heat-conductive substrate (such as copper, copper tungsten, molybdenum copper etc.)
Simultaneously after welding, then integral solder is on insulating heat-conductive substrate, then by this Module bond on a heat sink,
Fixing powered electrode, completes the preparation of laser instrument.
The program has the disadvantage in that
(1) weak heat-dissipating: in step 1, due to multiple conductive and heat-conductive substrate process issues, is difficult to do
To be leveled up and down (tolerance is relatively big, always has difference in height), cause step 2 being difficult to be bonded in insulation uniformly
On conducting strip so that the weak heat-dissipating of this product, it is difficult to realize high power, high duty ratio application.
(2) poor reliability: this preparation process make use of the ladder melting point property of different solder, so step
2 and step 3 must be with more low-melting solder than step 1, eutectic solder long-time stability and reliability are low,
To using environmental requirement high (cannot applied at elevated temperature), the poor radiation that this structure cannot overcome, product in addition
The overall life-span is shorter, and reliability is low.
Fig. 2 is the independent ceramic novel knot of conduction cooling type Superpower semiconductor laser array of current main flow
Body plan Preparation Method, welds one single chip, conductive and heat-conductive substrate and insulating heat-conductive sheet simultaneously, makes and partly lead
Body laser luminescence unit (COC-Chip on Carrier), surveys accordingly to quasiconductor luminescence unit
Examination, aging, screening, be then bonded qualified semiconductor laser luminescence unit by insulating heat-conductive sheet
On a heat sink, conduction cooling type high-power semiconductor laser is made.
Have a disadvantage in that
(1) complex process, cost is high: this technical process chips is successively by twice bonding, and technique is wanted
Ask high；Semiconductor laser luminescence unit needs precise clamp para-position, to encapsulation with being bonded of radiator
Equipment and operator require high, and whole process is artificial and equipment investment is high.
(2) qualification rate is low: chip, successively by twice bonding, can be caused weight by this technical process chips
Multiple damage；It is poor that secondary bond there will be cavity, rosin joint, wellability, ultimately results in welding quality poor,
Qualification rate is low.Failure welding also results in weak heat-dissipating, reliability and service life reduction.
Utility model content
For the deficiency overcoming existing high-power semiconductor laser encapsulation technology to exist, this utility model carries
Go out a kind of novel high-power semiconductor laser, can effectively solve laser instrument in existing structure scheme qualified
Rate is low, complex process, bonding quality difference and the problem such as reliability is the highest, promotes conduction cooling type Gao Gong
Rate semiconductor laser develops to more power.
Basic scheme of the present utility model is as follows:
A kind of high-power semiconductor laser, including radiator with by several chip of laser and substrate thereof
The chipset module constituted, the bottom of substrate by solder bond on radiator, the main body of described substrate
For insulating heat-conductive block；Corresponding to the bond area of chip of laser on substrate, described insulating heat-conductive block is just
Face and the back side are provided with thermally conductive layer, between thermally conductive layer and the thermally conductive layer at the back side in front
The conductive material arranged via surface and/or the internal run-through of insulating heat-conductive block forms electrical connection.
On the basis of above basic scheme, this utility model has also made the most important following optimization and improvement:
The conductive material of insulating heat-conductive block and the thermally conductive layer of front and back and composition electrical connection is
Integrative-structure.
Described integrative-structure is tied preferably with DBC structure (Direct Bonding Copper) or DPC
Structure (Direct Plating Copper).The thermally conductive layer of insulating heat-conductive block surface and/or inside can be passed through
Plate, cover, 3D printing, physical vapour deposition (PVD) (PVD), chemical gaseous phase deposition (CVD), physical chemistry
Vapour deposition (PCVD), electronics sputter, coat, spray, infiltration, combine Chemical Physics polishing (CMP),
The processes such as accurate cutting are made.
Two big classes can be divided into via the version of the conductive material of the surface configuration of insulating heat-conductive block:
1, insulating heat-conductive block top and/or the coating of insulating heat-conductive block sidepiece or coating it are arranged at.
2, at the one of the through thermally conductive layer to the back side of the thermally conductive layer in front or many places cylindricality knot
Structure.
For Equations of The Second Kind structure, the preferred square column of described column construction, cylinder or cylindroid, or this three
Plant the combination in any in cylindricality.
In view of adapting to the most conventional bonding technology (generally will be to carrying out metalized bottom substrate),
In this utility model, the suitable metallized process in the bottom of insulating heat-conductive block is formed with metallic film, this metal foil
Interval is kept between thermally conductive layer and the electric connection structure thereof of film and insulating heat-conductive block front and back.
Spreader surface also can be correspondingly arranged on parallel with chip of laser direction thin in substrate bond position
Groove is to reduce thermal stress, and the width of stria is less than the spacing between adjacent insulating heat-conductive block.
Insulating heat-conductive block can use aluminium oxide, aluminium nitride, beryllium oxide, carborundum, diamond or Buddha's warrior attendant
Stone carbon/carbon-copper composite material；All of conductive material can use copper, tungsten, molybdenum, gold, silver, aluminum, copper tungsten, molybdenum
Copper, copper molybdenum copper or diamond carbon/carbon-copper composite material.
This utility model also proposes a kind of method preparing above-mentioned high-power semiconductor laser, including following
Step:
1) according to same process conditions, the substrate described in batch machining claim 1；
2) several chip of laser and substrate thereof it is arranged in order and is bonded together, making chipset mould
Block；
3) use hard solder chipset module to be bonded on a heat sink, connect related electrode, make conduction
Cooling type high-power semiconductor laser.
This utility model has the characteristics that and beneficial effect:
1, structure based on this utility model substrate, arranges chip and substrate space, can disposably be bonded
Forming folded battle array structure, bonding effect concordance is good,；It can be avoided that twice bonding of prior art chips is (special
It is not second time welding) damage that chip is caused, rosin joint when can be substantially reduced chip bonding, sky
Hole occurs, it is ensured that each chip contacts with backing material well, and heat radiation uniformly, finally improves laser instrument envelope
The yield rate of dress.
2, structure based on this utility model substrate, can use high melting point solder, it is achieved real hard solder
(without indium) encapsulates, and can strengthen anti-fatigue ability and the heat stability of product, the final longevity improving product
Life and reliability.
All substrates can be made unified standard component by 3, structure based on this utility model substrate, gram
The working height difference problem between each substrate before this, the bonding quality between chipset and radiator are taken
It is greatly improved, strengthens product anti-fatigue ability and stability, it is possible to realize real hard solder (without indium
Change) encapsulation, make product be more suitable for the complex environments such as high temperature.
4, preparation technology greatly simplifies, and encapsulation process only needs two steps, and material variety is few, encapsulates fixture requirement
Low, therefore Material Cost and cost of labor are saved notable.
5, substrate of the present utility model self can utilize the most ripe process technology to be processed and formed at one time,
Without multiple welding, residual stress own is little and concordance good；By cutting on radiator, can be significantly
Reduce thermal coefficient of expansion mismatch problem impact between chipset and radiator, reduce being additionally subject to chip
Power and stress influence, can improve the spectrum of product, power characteristic and long-time stability.
6, substrate of the present utility model can carry out solder plating film or solder pre-fixes process, can realize mass,
In high precision, high efficiency production.
7, this utility model is more suitable for multi-chip, the encapsulation of long chamber long products, it is possible to realize more power
The output of density, more high-peak power.
Accompanying drawing explanation
Fig. 1, Fig. 2 are the schematic diagram of prior art.
Fig. 3 is preparation technology schematic diagram of the present utility model.
Fig. 4 is high-power semiconductor laser encapsulating structure schematic diagram of the present utility model.In figure, 1-substrate,
2-chip of laser, 3-light direction, 4-radiator.
Fig. 5 is first embodiment of substrat structure in this utility model.In figure, 11-substrate bulk is (high
Heat-conducting insulation material), 12-substrate has top and covers/chip electric connection structure (the high heat-conductivity conducting of coating
Material), the conductive and heat-conductive bottom 13-covers/coating.
Fig. 6 is second embodiment of substrat structure in this utility model.In figure, 11-substrate bulk is (high
Heat-conducting insulation material), 12-substrate has sidepiece and covers/chip electric connection structure (the high heat-conductivity conducting of coating
Material), the conductive and heat-conductive bottom 13-covers/coating.
Fig. 7 is the 3rd embodiment of substrat structure in this utility model.In figure, 11-substrate bulk is (high
Heat-conducting insulation material), 12-substrate has chip electric connection structure (the high heat-conductivity conducting material that internal run-through is filled
Material), the conductive and heat-conductive bottom 13-covers/coating.
Fig. 8-Figure 10 is the generalized section of structure shown in Fig. 7.In figure, (high heat conduction is exhausted for 11-substrate bulk
Edge material), 12-substrate has the chip electric connection structure (high heat-conductivity conducting material) that internal run-through is filled,
Conductive and heat-conductive bottom 13-covers/coating, the cylindricality through portion in 14-chip electric connection structure.
Figure 11 is the optimization structural representation of radiator in this utility model.In figure, 41-radiator body,
The stria of 42-spreader surface.
Detailed description of the invention
As shown in Figure 4, high-power semiconductor laser of the present utility model is mainly by substrate 1, laser instrument core
Sheet 2, radiator 4 and be welded to each other solder layer together and constitute.Wherein, substrate 1 may be considered one
Kind of insulation highly heat-conductive material covers (plating) high heat-conductivity conducting material base, is divided into the version that two classes are different:
The first as shown in Figure 5 and Figure 6, the main body of substrate is High-heat-conductiviinsulation insulation material.Corresponding to substrate
The bond area of upper chip of laser, substrate face and the back side the most all have covers (plating) floor height heat-conductivity conducting material
Material (i.e. the high heat-conductivity conducting material on this two sides at least covers the bond area of chip of laser), and by lining
Top, the end and/or sidepiece cover (plating) floor height heat-conductivity conducting material and are formed between substrate face and substrate back
Conductive communication.Have bottom substrate and cover (plating) floor height heat-conductivity conducting material, for directly welding with radiator；
This part is covered (plating) floor height heat-conductivity conducting material and must be led with (plating) floor height heat conduction of covering of aforesaid conductive UNICOM
Electric material separates and is not attached to.
The second is as it is shown in fig. 7, the program is substantially the same with the first scheme, except for the difference that: in order to incite somebody to action
Substrate face and substrate back conductive communication, be insulation highly heat-conductive material substrate bulk internal run-through set
Putting and cover (plating) floor height heat-conductivity conducting material, its through shape can be square column hole, cylindrical hole, cylindroid
Hole or the combination (seeing Fig. 8, Fig. 9, Figure 10) of several cylindrical holes, oval post holes etc..Through filling
Material and substrate face and (plating) floor height heat-conductivity conducting material that covers of substrate back be same material, one
Body formed.
High-heat-conductiviinsulation insulation material thermal conductivity in this utility model is preferably greater than 150W/m.k, as ceramic material,
Ceramic-metal composites, diamond or diamond metal composite, specifically can use oxidation
The composites such as aluminum, aluminium nitride, beryllium oxide, carborundum, diamond, diamond copper；Cover (plating) layer
The thickness of high heat-conductivity conducting material is preferably greater than 12um, can be aluminum, copper, silver, gold etc..
Chip of laser in this utility model can be single tube chip, bar bar chip or mini bar core
Sheet (many luminous points chip), it is also possible to be multiple die connection composition, or multiple bar bar chip (or micro-
Type bar bar chip) concatenate or and connect composition.
Radiator in this utility model is that high conductivity material is made, and thermal conductivity is preferably greater than 200W/m.k；Can
To use air-cooled, liquid refrigerating, electricity refrigeration or two of which or two or more compound mode refrigeration.
As shown in figure 11, in order to preferably eliminate radiator expand with heat and contract with cold on chipset affect, at radiator
A series of stria 42 parallel with chip direction is carved with on surface with chipset welding position, and slot width is less than
Spacing between adjacent insulating heat-conductive block.
The preparation method of this high-power semiconductor laser product is as follows:
Step one: according to same process conditions, batch machining substrate；This High-heat-conductiviinsulation insulation material covers (plating)
High heat-conductivity conducting material base can carry out solder plating film or solder pre-fixes process.Can do at single or double
Reason, this technique can mass production completely, it is ensured that process consistency.
Step 2: multiple chips and substrate thereof are sequentially arranged at intervals and weld together, make chipset mould
Block.Owing to have employed the thinking once welded, the chip that chip secondary welding can be avoided completely to bring damages
Wound and failure welding, be greatly improved the welding quality of chip, radiating effect and qualification rate.
Step 3: chipset module welded on a heat sink, connects related electrode, makes conduction cooling
Type high-power semiconductor laser.This processing step can use the solder more slightly lower than bonding chip fusing point,
Avoid using slicken solder (indium, tin-lead etc.), improve product reliability.
Product work principle: after product has encapsulated energising, covers (plating) by High-heat-conductiviinsulation insulation material high
Heat-conductivity conducting material base (substrate) conducting chip, chip stimulated luminescence, it is not converted into the part heat of light
Amount is covered (plating) high heat-conductivity conducting material (substrate) by High-heat-conductiviinsulation insulation material and is delivered on radiator,
Finally taken away by radiator.
Claims (8)
1. a high-power semiconductor laser, including radiator with by several chip of laser and lining thereof
The chipset module that the end is constituted, the bottom of substrate is by solder bond to radiator, it is characterised in that:
The main body of described substrate is insulating heat-conductive block；Corresponding to the bond area of chip of laser on substrate, described
The front and back of insulating heat-conductive block is provided with thermally conductive layer, the thermally conductive layer in front and the back side
The conductive material arranged via surface and/or the internal run-through of insulating heat-conductive block between thermally conductive layer forms electricity
Connect.
High-power semiconductor laser the most according to claim 1, it is characterised in that: insulating heat-conductive
The conductive material of block and the thermally conductive layer of front and back and composition electrical connection is structure as a whole.
High-power semiconductor laser the most according to claim 2, it is characterised in that: described one
Structure is DBC structure (Direct Bonding Copper) or DPC structure (Direct Plating
Copper)。
High-power semiconductor laser the most according to claim 1, it is characterised in that: via insulation
The version of the conductive material of the surface configuration of heat-conducting block is: be arranged at insulating heat-conductive block top and/or absolutely
The coating of edge heat-conducting block sidepiece or coating.
High-power semiconductor laser the most according to claim 1, it is characterised in that: via insulation
The version of the conductive material that the internal run-through of heat-conducting block is arranged is: through from the thermally conductive layer in front
To the back side thermally conductive layer one at or many places column construction.
High-power semiconductor laser the most according to claim 5, it is characterised in that: described cylindricality
Structure is the combination in any in square column, cylinder or cylindroid, or these three cylindricality.
High-power semiconductor laser the most according to claim 1, it is characterised in that: described insulation
The metallized process in bottom of heat-conducting block is formed with metallic film, this metallic film and insulating heat-conductive block front
And between the thermally conductive layer at the back side and electric connection structure thereof, keep interval.
High-power semiconductor laser the most according to claim 1, it is characterised in that: described heat radiation
Device surface is correspondingly arranged on the stria parallel with chip of laser direction and answers to reduce heat in substrate bond position
Power, the width of stria is less than the spacing between adjacent insulating heat-conductive block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620222941.4U CN205543689U (en) | 2016-03-22 | 2016-03-22 | High power semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620222941.4U CN205543689U (en) | 2016-03-22 | 2016-03-22 | High power semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205543689U true CN205543689U (en) | 2016-08-31 |
Family
ID=56784306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620222941.4U Active CN205543689U (en) | 2016-03-22 | 2016-03-22 | High power semiconductor laser |
Country Status (1)
| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790071A (en) * | 2016-03-22 | 2016-07-20 | 西安炬光科技股份有限公司 | High-power semiconductor laser and preparation method thereof |
| CN110544871A (en) * | 2019-08-29 | 2019-12-06 | 西安域视光电科技有限公司 | Packaging structure and stacked array structure of semiconductor laser |
-
2016
- 2016-03-22 CN CN201620222941.4U patent/CN205543689U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790071A (en) * | 2016-03-22 | 2016-07-20 | 西安炬光科技股份有限公司 | High-power semiconductor laser and preparation method thereof |
| CN110544871A (en) * | 2019-08-29 | 2019-12-06 | 西安域视光电科技有限公司 | Packaging structure and stacked array structure of semiconductor laser |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |